JPS6076150A - Metallic package for semiconductor device - Google Patents

Abstract

PURPOSE:To improve hermetic sealing resistance and reliability by forming structure in which the outer diameter of a large diameter section in a hermetic sealing terminal section in size capable of being inserted into the inner diameter of a circular hole in a metallic main body and the inside of a small diameter section in the hermetic sealing section is filled with an insulating material supporting an electrode lead. CONSTITUTION:A hermetic sealing terminal section 12 is formed so that a small diameter cylindrical section and a large diameter cylindrical section are continued by Kovar, an electrode led 2 for inputting and outputting an electric signals is arranged at approximately the centers of both cylindrical sections in common with both cylindrical sections, and the electrode lead 2 for inputting and outputting the electric signal is sealed and supported by a glass sealing section 3 filled into the small diameter section. The outer diameter of the large diameter section is formed in size accurately inserted into the inner diameter of a circular hole 10 shaped to a main body 11, and the periphery of the large diameter section is inserted and brazed into the circular hole 10. Accordingly, a flexible ring 5 section in which a stepped section between the large diameter section and the small diameter section is formed can absorb the expansion and contractin of the glass sealing section 3 even when the glass sealing section 3 expands or contracts due to a thermal shock.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of the Invention] The present invention relates to a heat dissipation metal package structure for a semiconductor device. In particular, it is equipped with a semiconductor that generates heat, and it releases! 1! ) Concerning the structure of a metal package that improves airtightness, airtightness, and bondability of parts.

[Description of prior art]

FIG. 1 is a perspective view of a conventional semiconductor metal pancake, and FIG. 2 is a perspective view of a conventional semiconductor heat dissipation type metal package.

As shown in FIG. 1, a typical example of a metal pancage is usually a structure in which a glass sealing metal l and an electrode lead 2 for electrical signal input/output are insulated and sealed by a glass sealing part 3. However, for power transistors that require heat dissipation, a structure in which a heat dissipation metal 4 is joined to a glass sealing metal 1 is well known, as shown in a typical example in FIG.

Generally, when insulating and sealing metallic electrode leads 2 for inputting and outputting electric signals, glass has been widely used because it increases productivity and can be manufactured at low cost. In this case, the glass sealing metal 1 is PE used for the compression method.
-Ni alloy or Fe alloy, Matt]: There are two typical types of Fe-old-Co alloy used in the method, but both of these! "Power I transistors with low conductivity and high output transistors are implemented.
When converting into a device such as F E i' amplifier,
h9. It is functionally insufficient when heated. For this reason, many metal packages have been opened in which glass-sealed gold 1h (metal 1h) is bonded to a metal base, typically copper, which has good thermal conductivity.

However, when subjected to heat stress, such as when soldering dissimilar metals or when soldering a pellet cheek to a package, the stress on the glass sealing part 3 due to the difference in expansion,
Accidents often occur that result in cracks in the glass and peeling from the interface between the glass and metal, leading to poor airtightness.

Furthermore, the method of sealing the cap after removing the inside of the package is U-jection welding,
Laser welding is generally performed, and Fe-based or Pe-Ni-based alloys are often used for the joints between the shells of packages due to weldability and workability. For this reason, metal packages that require good thermal conductivity require a combination of different metals.

However, when an Fe-based alloy and Cu having different coefficients of expansion are brazed, the difference in expansion causes a bimetallic force to act on the metal package during the cooling process, causing large warpage in the metal package. Therefore, manufacturing a metal package that requires high airtightness and 1Riti degree and is made of different metals is complicated, difficult, and expensive.

The present inventors have focused on the fact that the above-mentioned problem can be solved by changing the structure of the electrode plate 1 without drawing it out to the outside of the RIS, and have now completed the present invention.

[Purpose of the invention]

SUMMARY OF THE INVENTION An object of the present invention is to provide a structure of a semiconductor thermal type metal vano gauge that is of high quality and has excellent uniformity, and does not cause airtightness failure of the glass sealing part due to thermal stress.

[Features of the invention]

The feature of the first invention is that it originates from the − side;:! ! It is configured to be able to mount a semiconductor, and has a metal body having a plurality of round holes between one surface and the other surface for electrode leads to pass through, and a metal body that is inserted into and fixed to the round holes. ↑ (terminal part), and the airtight part has a large diameter part whose outer diameter is cylindrical, and a large diameter part whose outer diameter is cylindrical, with the electrode lead passing through it being approximately the center axis. It consists of a cylindrical small diameter part smaller than the ¥ part, and is formed of a thin-walled material made of covar so that the outside of the large diameter part and the small i-striped part are continuous, and the outer diameter of the large diameter part is free. It is formed to a size that can be inserted into the inner diameter of the above-mentioned round hole, and the inside of the small part (A) is filled with an insulating material that supports the above-mentioned electrode lead, improving heat resistance, air permeability, and reliability. It's about being able to do things.

The second feature of the invention is that the outer diameter of the small diameter portion is formed to a size that can be inserted into the inner diameter of the round hole, and the inside of the small diameter portion is filled with an insulating material that supports the electrode lead. The advantage is that the structure has improved heat resistance, airtightness, and reliability.

[Explanation based on examples]

Next, the structure of a semiconductor multi-heat type metal package according to an embodiment of the present invention will be explained based on the drawings.

Figures 3 and 4 are cross-sectional views of the semiconductor heat dissipation type metal package according to the present invention, and Figures 5 are cross-sectional views of the terminal portion of the semiconductor heat dissipation type metal package according to the present invention. 1 is a plan view of an application example of a semiconductor multi-heat type metal package according to an embodiment of the present invention; FIG.

As shown in FIGS. 3 and 4, there is provided a copper body 7 on which a heat-generating semiconductor chip 8 and substrates 9 are mounted, and a plurality of copper bodies 7 provided on the copper body 7. The entire body is composed of an airtight terminal portion 12 inserted into each through-hole and brazed thereto, and a stainless steel ring 6 brazed to the outer periphery of the upper surface of the copper body 7. From the configuration shown in the drawing, the W plate cheek 9 is removed ζ,
There is also a configuration in which the heat generating semiconductor chip 8 is directly mounted on the copper body 7.

Here, the feature of the present invention is the airtight terminal portion 12 and its mounting structure. As shown in FIG. 5, the airtight terminal part 12 is formed so that a small diameter cylindrical part and a large diameter cylindrical part are continuous with an edge, and an electrode lead 2 for inputting and outputting electrical signals is formed.
is commonly arranged approximately at the center of both cylinder parts, and the electrode wire F2 for inputting and outputting electrical signals is filled inside the small diameter part and sealed and supported by the saw glass sealing part 3.

Moreover, when the airtight child part 12 is cut into the main body 11, it is removed by its large diameter portion. In other words, the outer diameter of the large diameter portion is large enough to fit into the inner diameter of the round hole L-1 provided in the main body +1, and the periphery of the large diameter portion is inside this round hole 10. It is inserted and fucked.

Therefore, even if the glass sealing portion 3 expands or contracts due to extreme heat, the portion of the flexible ring 5 where the step between the large diameter portion and the small diameter portion is created can absorb this expansion or contraction.

Furthermore, each part will be explained in detail. The tii+ u main body 7 is plated with electroless thick plating with excellent dimensional stability after machining to ensure uniformity of the hole diameter to which the terminal portion 12 is brazed and to ensure the solderability of the stainless steel ring 6. In addition, the material of the stainless steel ring 6 has a coefficient of expansion close to that of copper, and the main body is made of copper.

It uses austenitic stainless steel that has excellent bonding properties with projection welding, etc., and is electroless IW plated to improve waxing properties and 1-method stability.

As mentioned above, the airtight terminal part 12 is made by sealing the flexible ring 5 made of Kobar with excellent shape with excellent elasticity and the electrode lead 2 made of 21 bar for electrical signal input/output using a matte method. It is cheap and can be produced in large quantities.

By brazing the above-described three points, the copper body 7, the stainless steel ring 6, and the airtight terminal portion 12, in an inert atmosphere furnace, the semiconductor multithermal metal package of the present invention can be obtained. This semiconductor multithermal metal package is made by making the cover material, which has a different coefficient of expansion, as thin as possible among the constituent materials.
In addition, the structure reduces the stress caused by the difference in expansion with copper during heating and minimizes the strain that reaches the glass sealing part 3 due to the flexibility of the terminal itself, which may cause damage to the glass part. Never. In addition, the brazing process before brazing can be automated because the above three parts are aligned in the same direction, and the rectangular package shown in Figure 6 and the The shape of the package, such as the round package shown in the figure, can be arbitrarily set. Furthermore, since the position of the terminal can be changed freely, it can be used even in a high-density circuit such as an MIC, and its range of applications can be expanded.

FIGS. 8 and 9 are cross-sectional views showing the structure of a second embodiment of the present invention. As shown in FIG. 8, the airtight terminal part 12 is provided with a glass sealing part 3 inside the large diameter part to support the electrode lead 1ζ2 for inputting and outputting electrical signals, and the small diameter part is provided with the glass sealing part 3 inside the large diameter part. The inside is hollow. To attach it to the main body, as shown in FIG. 9, the outside of this small diameter portion is fitted into the inside of the round hole IO provided in the main body 11 and brazed.

This structure also prevents the distortion caused by Geki Atsuta from being caused by the flexible ring 5 formed by the outer edge of the hermetic terminal portion 12.
0 portion can be absorbed.

〔Effect of the invention〕

As described above, according to the present invention, mechanical strain due to thermal shock does not act directly on the sealing part, so (11i+
V! Excellent airtightness, 1li4 airtightness and non-electricity, (2)
It has the advantage of being able to supply uniform and excellent packages of high quality, such as expanding the design range, allowing the circuit mounting shape to be chosen arbitrarily, and (3) being able to obtain highly accurate pancakes with little deformation. .

[Brief explanation of drawings]

FIG. 1 is a perspective view of a conventional semiconductor metal package. FIG. 2 is a perspective view of a conventional semiconductor thermal type metal package. 3 and 4 are cross-sectional views of a semiconductor heat dissipation type metal bath cage according to an embodiment of the present invention. FIG. 5 is a sectional view of the terminal portion of the semiconductor heat dissipation type metal path cage according to the embodiment of the present invention. FIGS. 6 and 7 are plan views of application examples of the semiconductor multithermal metal package of the present invention. FIG. 8 is a sectional view of the terminal portion of the semiconductor heat dissipation type metal package 7 cage according to the second embodiment of the present invention. FIG. 9 is a sectional view of a semiconductor heat-dissipating metal pancage according to a second embodiment of the present invention. DESCRIPTION OF SYMBOLS 1...Glass sealed metal, 2...Electrode plate 1' for electric signal human output, 3...Glass sealed part, 4...Heat dissipation metal, 5...Flexible ring, 6... Stainless steel ring, 7... Copper body, 8... Heat generating semiconductor chip, 9...
...Substrates, 10...Round hole 1 capital, 11...
Electroless plating, 12...Airtight terminal part. Patent Applicant 11 Hondenki Co., Ltd. Agent Patent Attorney Nao Ide Takashi 7Yl I M Pl 2 Figure M3 Figure 4 M Atsushi 6 times Tail 7 Figure λ 8M 9 Mouth ≦ Small

Claims (1)

[Scope of Claims] (11) A metal body configured to be able to mount a heat-generating semiconductor on its surface, and having a plurality of round holes between the surface and the other surface for electrode leads to pass through. and an airtight terminal portion that is inserted into the round hole and fixed, and the airtight terminal portion has a large diameter portion having a cylindrical outer diameter, and a large diameter portion having a cylindrical outer diameter, with the electrode lead passing through the penetrating lead being approximately the central axis, and is composed of a cylindrical small-diameter part smaller than the large-diameter part, and is formed of a thin-walled material made of Kovar so that the outside of the large-diameter part and the small-diameter part are continuous, and the outer diameter of the large-diameter part is It is formed to a size that can be inserted into the inner diameter of any round hole,
A metal package for a semiconductor device, characterized in that the inside of the small diameter portion is filled with an insulating material that supports the electrode lead. (2) A metal body configured to be able to mount a heat-generating semiconductor on the − surface, and having a plurality of round holes for passing the electrodes between the − surface and the other surface. and an airtight DIi+ terminal part which is inserted into the circular hole marked "2" and fixed. , and a cylindrical small-diameter part whose outer diameter is smaller than the large-diameter part, and is formed of a thin-walled material made of Kobar so that the outside of the person 1'L part and the small-diameter part 5) are continuous, The outer diameter of the small diameter portion described in 2. is formed to a size that can be inserted into the inner diameter of the round hole, and the inside of the portion is filled with an insulating material that supports the electrode plate -F. A metal package for semiconductor devices characterized by: