JPS6083247U - Microwave integrated circuit transistor circuit - Google Patents
Microwave integrated circuit transistor circuitInfo
- Publication number
- JPS6083247U JPS6083247U JP17616383U JP17616383U JPS6083247U JP S6083247 U JPS6083247 U JP S6083247U JP 17616383 U JP17616383 U JP 17616383U JP 17616383 U JP17616383 U JP 17616383U JP S6083247 U JPS6083247 U JP S6083247U
- Authority
- JP
- Japan
- Prior art keywords
- microwave integrated
- circuit
- integrated circuit
- semiconductor substrate
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
- Amplifiers (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は従来のマイクロ波集積回路化トランジスタ回路
を示す平面図、第２図はこの考案によるマイクロ波集積
回路化トランジスタ回路の実施例を示す平面図、第３図
はこの考案をプッシュプ）５増幅器の入力側に適用した
例を示す平面図である。
２１：半導体基板、２２．２２’：ＦＥＴ、 ２３．２
３’：ソース電極、２４，２４’：ゲート電極、２５．
２５’ニドレイン電極、２６，２７゜２８：接地導体、
２９．２９’、３１．３１’、３４゛ニスロツト線路。Fig. 1 is a plan view showing a conventional microwave integrated circuit transistor circuit, Fig. 2 is a plan view showing an embodiment of a microwave integrated circuit transistor circuit according to this invention, and Fig. 3 is a plan view showing an embodiment of this invention. FIG. 3 is a plan view showing an example of application to the input side of an amplifier. 21: Semiconductor substrate, 22.22': FET, 23.2
3': source electrode, 24, 24': gate electrode, 25.
25' ni-drain electrode, 26, 27° 28: ground conductor,
29.29', 31.31', 34' Nislot line.
Claims (1)
電界効果トランジスタのソース電極、ゲート電極及びド
レイン電極にそれぞれ接続された第１、第２及び第３の
導体が上記半導体基板に形成され、上記第１及び第２の
導体によりスロット線路よりなる入力線路が構成され、
上記第１及び第３の導体でスロット線路の出力線路が構
成されているマイクロ波集積回路化トランジスタ回路。A field effect transistor is formed on the semiconductor substrate, first, second and third conductors connected to the source electrode, gate electrode and drain electrode of the field effect transistor, respectively, are formed on the semiconductor substrate, and the first, second and third conductors are formed on the semiconductor substrate. and the second conductor constitutes an input line consisting of a slot line,
A microwave integrated circuit transistor circuit, wherein the first and third conductors constitute an output line of a slot line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17616383U JPS6083247U (en) | 1983-11-14 | 1983-11-14 | Microwave integrated circuit transistor circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17616383U JPS6083247U (en) | 1983-11-14 | 1983-11-14 | Microwave integrated circuit transistor circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6083247U true JPS6083247U (en) | 1985-06-08 |
Family
ID=30383069
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17616383U Pending JPS6083247U (en) | 1983-11-14 | 1983-11-14 | Microwave integrated circuit transistor circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6083247U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63164276A (en) * | 1986-12-25 | 1988-07-07 | A T R Koudenpa Tsushin Kenkyusho:Kk | Semiconductor device |
-
1983
- 1983-11-14 JP JP17616383U patent/JPS6083247U/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63164276A (en) * | 1986-12-25 | 1988-07-07 | A T R Koudenpa Tsushin Kenkyusho:Kk | Semiconductor device |
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