JPS6083321A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6083321A
JPS6083321A JP58190735A JP19073583A JPS6083321A JP S6083321 A JPS6083321 A JP S6083321A JP 58190735 A JP58190735 A JP 58190735A JP 19073583 A JP19073583 A JP 19073583A JP S6083321 A JPS6083321 A JP S6083321A
Authority
JP
Japan
Prior art keywords
film
single crystal
polycrystalline
impurity
projection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58190735A
Other languages
Japanese (ja)
Inventor
Kikuo Kusukawa
喜久雄 楠川
Osamu Okura
理 大倉
Masanobu Miyao
正信 宮尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58190735A priority Critical patent/JPS6083321A/en
Publication of JPS6083321A publication Critical patent/JPS6083321A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3814—Continuous wave laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3458—Monocrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3818—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using particle beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/382—Scanning of a beam

Landscapes

  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To execute impurity diffusion in different depth by changing a polycrystalline or amorphous Si film on an insulating film into a single crystal through the projection of beam energy while selectively diffusing an impurity implanted to the surface of a single crystal Si substrate in a short time. CONSTITUTION:An impurity diffusion N<+> layer 2 is formed to the surface of a P type single crystal Si substrate 1 through the implantation of phosphorus ions. An oxide film 3 is formed through a CVD method and a polycrystalline Si film 4 through the thermal decomposition of SiH4. A nitride film 5 is shaped through the CVD method as a projecting-beam non-absorbent substance, continuous-wave argon ion laser beams 6 are projected while scanning the nitride film, and the polycrystalline Si film 4 is changed into a single crystal while the impurity 2 is diffused. The temperature of the sample substance is brought to 500 deg.C, the diameter of beams to 100mum, the power of projection to 5-20W and the speed of beam scanning to 1-100cm/s as the conditions of projection.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は半導体装置の製造方法に関し、詳しくは絶縁膜
上に単結晶Ｓｉ膜を形成すると同時に上記絶縁膜下に予
め形成した不純物層を１柚類以上の所望の深さに拡散す
る方法に関する。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a method for manufacturing a semiconductor device, and more specifically, the present invention relates to a method for manufacturing a semiconductor device, and more specifically, a single crystal Si film is formed on an insulating film, and at the same time, an impurity layer previously formed under the insulating film is removed. This invention relates to a method of diffusing to a desired depth greater than or equal to the desired depth.

〔発明の背景〕[Background of the invention]

単結晶Ｓｉ表面に注入した不純物層を鉱層する１つの方
法として、高温炉による熱拡散がある。One method for forming an impurity layer implanted on the surface of single crystal Si is thermal diffusion using a high-temperature furnace.

しかし、この方法では、高温で長時間の熱処理が必要で
あり、かつ拡散深さも１試料内で２種類以上選択できな
い事が欠点でおった。However, this method requires heat treatment at a high temperature for a long time, and has disadvantages in that it is not possible to select two or more diffusion depths within one sample.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、上記従来の問題を解決し、単結晶Ｓｉ
膜と１棟類以上の深さの不純物拡散層を同一工程で形成
し得る方法を提供する事にある。The purpose of the present invention is to solve the above-mentioned conventional problems and to
It is an object of the present invention to provide a method capable of forming a film and an impurity diffusion layer having a depth of one layer or more in the same process.

〔発明の概要〕[Summary of the invention]

上記目的を達成するため、本発明はビームエネルギー照
射によって絶縁膜上の多結晶もしくは非晶質Ｓｉ膜を単
結晶化すると同時に、単結晶３ｉ基板の表面に注入され
た不純物を短時間で選択的に拡散す、る事を特徴として
いる。本発明では、同−試料内で照射ビーム非吸収物質
の膜厚を変化さ・　１ せる挙により、４．透過ビームの強度を制御し、短時間
で１種−以上の所望の不純物拡散の深さを得ることが可
能である。In order to achieve the above object, the present invention single-crystallizes a polycrystalline or amorphous Si film on an insulating film by beam energy irradiation, and at the same time selectively removes impurities implanted into the surface of a single-crystal 3i substrate in a short time. It is characterized by spreading to. In the present invention, by changing the film thickness of the material that does not absorb the irradiation beam within the same sample, 4. By controlling the intensity of the transmitted beam, it is possible to obtain one or more desired impurity diffusion depths in a short time.

し発明の実施例〕 実施例１ 以下、本発明の実施例１を第１図により説明する。まず
％Ｐ型型詰結晶５ｚｔｏｏ基板１の表面に５　Ｘ　１０
”　ｃｍ−”のりん（Ｐ）イオン注入によシネ鈍物拡散
１１層２を形成した。その後ＣＶＤ法により厚さ０．４
μｍの酸化膜３、さらに５ｉＨａあ熱分解によシ厚さ０
．４μｍの多結晶Ｓｉ膜４を形成した。次に照射ビーム
非吸収物質としてＣＶＤ法により２０　ｎｍの窒化膜５
を形成した後、連続発振アルゴンイオンレーザ光６１に
図のように走査しながら照射し、上記多結晶Ｓｉ膜４の
単結晶化とともに、不純物層２の拡散を行なった。照射
条件は、試料基板添置を５００Ｃとし、ビーム直径１０
０μｍ、照射パワー５〜２０Ｗ１　ビーム走査速度１〜
１００ｃｒｎ／Ｓとした。例えば、ビーム走査速度１０
　ｃｍ／　Ｓの場合のレーザ照射パワーと不純物拡散層
の深さの関係は第２図で示きれる。従って、１５Ｗのレ
ーザ照射後、多結晶Ｓｉ膜４は単結晶化し、不純物層２
は約３μｍ拡散された。EXAMPLES OF THE INVENTION Example 1 Example 1 of the present invention will be described below with reference to FIG. First, %P-type packed crystal 5ztoo on the surface of substrate 1 5 x 10
A cine blunt diffusion 11 layer 2 was formed by implanting phosphorus (P) ions of "cm-". After that, the thickness was 0.4 by CVD method.
Oxide film of μm 3, further 5iHa, thickness 0 due to thermal decomposition
．． A polycrystalline Si film 4 of 4 μm was formed. Next, a 20 nm thick nitride film 5 was formed by CVD as a material that does not absorb the irradiation beam.
After forming, the polycrystalline Si film 4 was made into a single crystal and the impurity layer 2 was diffused by irradiation with a continuous wave argon ion laser beam 61 while scanning as shown in the figure. The irradiation conditions were a sample substrate attached at 500C and a beam diameter of 10
0μm, irradiation power 5~20W1, beam scanning speed 1~
It was set to 100 crn/S. For example, beam scanning speed 10
The relationship between the laser irradiation power and the depth of the impurity diffusion layer in the case of cm/S can be shown in FIG. Therefore, after 15W laser irradiation, the polycrystalline Si film 4 becomes single crystal, and the impurity layer 2
was diffused approximately 3 μm.

また、レーザ照射条件によっては、約１５μｍの不純物
拡散層の形成も可能でおった。なお、本実施例では、Ｐ
型基板を用いたが、本発明の効果はこれに限定されず、
Ｎ型基板でも良く、不純物についてもシん（Ｐ）に限定
されず、Ａｓ、Ｂ。Further, depending on the laser irradiation conditions, it was also possible to form an impurity diffusion layer with a thickness of about 15 μm. Note that in this example, P
Although a molded substrate was used, the effects of the present invention are not limited to this.
An N-type substrate may be used, and impurities are not limited to thin (P), but may also be As, B, etc.

Ｓｂでもよい。また、ビームエネルギーについても、連
続発振アルゴンイオンレーザに限らず、電子線、ストリ
ップヒータ等による局所加熱を用いればよく、更に照射
ビーム非吸収膜も５ｉ０２でも同様な効果が得られる。Sb may also be used. Furthermore, the beam energy is not limited to a continuous wave argon ion laser, and local heating using an electron beam, a strip heater, etc. may be used, and the same effect can be obtained even if the irradiation beam non-absorbing film is 5i02.

実施例２ 第３図に示すように％実施例１と同様な工程で多結晶Ｓ
ｉ膜まで形成した後、照射ビーム非吸収物質としてＣＶ
Ｄ法により４０ｎｍの窒化膜を形成した。この窒化膜の
一部にエツチングマスクとしてホトレジストを形成し、
窒化膜の露出した領域のみｆ　２０　ｎ　ｍエツチング
した故、ホトレジストを除去し連続発振アルゴンイオン
レーザ光６を第３図のよらに走査しながら照射し、上記
多結晶Ｓｔ膜４の単結晶化とともに、不純物層２の拡散
を行なった。照射条件は％実施例１と同様である。Example 2 As shown in Figure 3, polycrystalline S
After forming the i-film, CV
A 40 nm nitride film was formed by method D. A photoresist is formed on a part of this nitride film as an etching mask,
Since only the exposed region of the nitride film was etched by f 20 nm, the photoresist was removed and the continuous wave argon ion laser beam 6 was irradiated while scanning as shown in FIG. , the impurity layer 2 was diffused. The irradiation conditions were the same as in Example 1.

しかし、照射ビーム非吸収膜が照射レーザ光に対して透
明であるため、膜中でのレーザ光の干渉によって反射防
止効果が生じる。この尼め、同一パワーでレーザを照射
しても：その膜厚によって多結晶Ｓｔに与えられるエネ
ルギー量が大きく変化する。第４図に窒化膜厚とアルゴ
ンレーザ光の透過率の関係を示す。したがって、窒イし
膜２０　ｎｍでは６８％、４０ｎｍでは８５％のレーザ
光が多結晶ＳｉＫ透過するため、例えば、レーザ照射パ
ワー１４Ｗ、Ｌ／−ザ走査速腋１０　ｃｍ／　Ｓの場合
。However, since the irradiation beam non-absorbing film is transparent to the irradiated laser light, an antireflection effect occurs due to interference of the laser light in the film. Even if the laser is irradiated with the same power, the amount of energy given to the polycrystalline St varies greatly depending on the film thickness. FIG. 4 shows the relationship between the nitride film thickness and the transmittance of argon laser light. Therefore, 68% of the laser light passes through polycrystalline SiK when the nitride film is 20 nm thick, and 85% when the 40 nm thick nitride film passes through the polycrystalline SiK.

照射ビーム非吸収膜２０　ｎｒｎ領域では１．２μｍ。Irradiation beam non-absorbing film 20: 1.2 μm in the nrn region.

４０ｎｍ領域では６．５μｍの不純物拡散層が得られた
。In the 40 nm region, an impurity diffusion layer of 6.5 μm was obtained.

〔発明の効果〕〔Effect of the invention〕

上記説明から明かなように本発明によれば、単結ａ、Ｓ
ｉ膜形成と、同−試料内で特に従来の熱拡散では困難と
嘔れている深さ領域において深芒の異なる不純物拡散が
同一工程で得る事が可能である。As is clear from the above description, according to the present invention, single bonds a, S
It is possible to form an i-film and to diffuse impurities to different depths within the same sample, especially in a depth region where conventional thermal diffusion is difficult.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は、試料の断面図、第２図はレーザ照射パワーと
不純物拡散深さの関係を示す曲麿図、第３図は本発明の
実施例ｔ−ｇ明するための断面図、第４図は窒化膜厚と
レーザ光の透過率の関係を示す曲線図である。 ｌ・・・単結晶Ｓｉ基板、２・・・不純物ドープ層、３
・・・酸化膜、４・・・、多結晶Ｓｉ膜、５・・・窒化
膜、６・・・連第１図 １２　口 し−プ゛思１才パヮー（Ｗ） 第　３（２） ￥５４−　図FIG. 1 is a cross-sectional view of the sample, FIG. 2 is a Kuramaro diagram showing the relationship between laser irradiation power and impurity diffusion depth, and FIG. 3 is a cross-sectional view for explaining the embodiments of the present invention. FIG. 4 is a curve diagram showing the relationship between nitride film thickness and laser beam transmittance. l... Single crystal Si substrate, 2... Impurity doped layer, 3
...Oxide film, 4..., Polycrystalline Si film, 5...Nitride film, 6...Sequence 1 Fig. 12 Part 3 (2) ￥ 54-Fig.

Claims (1)

【特許請求の範囲】[Claims] １、単結晶Ｓｉ基板表面の一部または全部の不純物拡散
層を形成すべき所望領域に不純物ドープし、その上に形
成した絶縁＃層を覆う多結晶もしくは非晶５ＪＬＳｉｌ
Ｌ＠を、その上に形成した一種類以上の膜厚の照射ビー
ム非吸収物質を介在してレーザ光、電子線等のビームエ
ネルギーの照射、或いは線状ヒータ等による局所加熱に
より融解せしめた後にこれらを単結晶化すると同時に、
上記不純物の１種類以上を希望の深ざに拡散する事を特
徴とする半導体装置の製造方法。1. Polycrystalline or amorphous 5JLSil is doped with impurities into a desired region where an impurity diffusion layer is to be formed on part or all of the surface of the single crystal Si substrate, and covers the insulating layer formed thereon.
After L@ is melted by irradiation with beam energy such as a laser beam or electron beam, or by local heating using a linear heater, etc., through a material that does not absorb the irradiation beam and has one or more thicknesses formed thereon. At the same time as making these into single crystals,
A method for manufacturing a semiconductor device, characterized in that one or more of the above impurities is diffused to a desired depth.
JP58190735A 1983-10-14 1983-10-14 Manufacture of semiconductor device Pending JPS6083321A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58190735A JPS6083321A (en) 1983-10-14 1983-10-14 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58190735A JPS6083321A (en) 1983-10-14 1983-10-14 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6083321A true JPS6083321A (en) 1985-05-11

Family

ID=16262904

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58190735A Pending JPS6083321A (en) 1983-10-14 1983-10-14 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6083321A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62104117A (en) * 1985-10-31 1987-05-14 Asahi Glass Co Ltd Manufacture of semiconductor thin film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62104117A (en) * 1985-10-31 1987-05-14 Asahi Glass Co Ltd Manufacture of semiconductor thin film

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