JPS6083902A - Formation of blazed grating - Google Patents

Formation of blazed grating

Info

Publication number
JPS6083902A
JPS6083902A JP19084983A JP19084983A JPS6083902A JP S6083902 A JPS6083902 A JP S6083902A JP 19084983 A JP19084983 A JP 19084983A JP 19084983 A JP19084983 A JP 19084983A JP S6083902 A JPS6083902 A JP S6083902A
Authority
JP
Japan
Prior art keywords
grating
film
photoresist
base plate
etching rate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19084983A
Other languages
Japanese (ja)
Inventor
Kazuhiro Kosuge
小菅 和弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP19084983A priority Critical patent/JPS6083902A/en
Publication of JPS6083902A publication Critical patent/JPS6083902A/en
Pending legal-status Critical Current

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  • Diffracting Gratings Or Hologram Optical Elements (AREA)

Abstract

PURPOSE:To obtain a high-performance grating by forming successively a photoresist film having the ion etching rate lower than the ion etching rate of a base plate, a metallic film and the 2nd photoresist film on the surface of the base plate to be worked and forming a relief type holographic diffraction grating on the 2nd photoresist film then etching successively the base plate and obtaining the high-performance grating. CONSTITUTION:The 1st photoresist film 2 is formed on a base plate 1 which is a base plate consisting of InP, GaAs, etc. having a high etching rate or an acrylic plate, by using the resist having the etching rate higher than the etching rate of the base plate. A thin metallic film 3 consisting of Au, Ni, etc. and the 2nd photoresist film 4 are formed on the same material as the film 2 on the film 2. A relief type holographic diffraction grating 4 is then formed on the film 4. The film 3 is etched to a rectangular section with the grating 4 as a mask and UV light 5 is exposed from the top surface of the grating to form the rectangular section of the 1st resist layer 2. After the film 3 is etched away, an ion beam 6 is projected from diagonally above with the layer 2 as a mask to form a blazed grating on the base plate.

Description

【発明の詳細な説明】 本発明は、分光器の波長分散素子やホログラム素子とし
て使われるブレーズド格子の製作方法に関し、詳しくは
ホログラフィック格子をイオンエツチングでブレーズ化
するブレーズド格子の製作方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a blazed grating used as a wavelength dispersion element or a hologram element in a spectrometer, and more specifically to a method for manufacturing a blazed grating in which a holographic grating is blazed by ion etching. be.

ホーグラム回折格子は9機械切り格子や電子ビーム描画
格子と比較して、ゴーストや迷光の発生が少なく、任意
の格子ピッチのものが容易に製作できる等の利点がある
。さらに製作時の2光束干渉光の位相で格子の周期分布
を制御できるので。
Compared to 9-mechanical cut gratings and electron beam drawn gratings, Holgram diffraction gratings have advantages such as less generation of ghosts and stray light, and the ability to easily manufacture gratings with arbitrary grating pitches. Furthermore, the periodic distribution of the grating can be controlled by the phase of the two-beam interference light during manufacturing.

波面変換機能を持つ素子としてホログラムスキャナ、ホ
ログラムレンズ、ホーグラフィックカプラー等への応用
がある。しかしながら、ホログラム格子の回折効率が低
く実用上問題である。現在。
Elements with a wavefront conversion function have applications in hologram scanners, hologram lenses, holographic couplers, etc. However, the diffraction efficiency of the hologram grating is low and is a practical problem. the current.

ホログラム格子の高回折効率化の最も効果的な方法とし
ては、あらかじめ形成したホpグラフイツフレリーフ格
子をシャドウマスクとし、基板の斜め上面方向からイオ
ンビームでエツチングしてブレーズド格子を形成するイ
オンエツチング法がある。ブレーズド格子は格子のブレ
ーズ角を制御することにより特定の回折次数へ理論上1
00%の光を回折させることができる。
The most effective method for increasing the diffraction efficiency of a hologram grating is the ion etching method, in which a pre-formed hop graphite relief grating is used as a shadow mask and etched with an ion beam from the diagonal direction of the top surface of the substrate to form a blazed grating. There is. A blazed grating can theoretically be applied to a specific diffraction order by controlling the blaze angle of the grating.
00% of light can be diffracted.

PMMA(ポリメタメチルアクリレート)層を形成した
面上のいずれかにホトレジスト例えばAZ−1350J
を塗布し、このレジスト層にHe−Cdレーザの2光束
干渉で干渉縞を記録してホトレジストレリーフ格子マス
クを形成し、このマスク格子の格子周期方向の斜め上面
から平行イオンビームで基板面をエツチングし、マスク
のシャドウにより被加工基板面にブレーズド格子を形成
していた1この場合番でおけるイオンエツチングでのシ
ャ・ドウマスクとするレリーフ格子の形状はホログラフ
ィックに形成した半丸ないし正弦波状断面である。
Apply a photoresist such as AZ-1350J on either side on which the PMMA (polymethmethylacrylate) layer is formed.
A photoresist relief grating mask is formed by recording interference fringes on this resist layer using two-beam interference of a He-Cd laser, and the substrate surface is etched with a parallel ion beam from an oblique upper surface in the grating periodic direction of this mask grating. However, the shape of the relief grating used as a shadow mask in ion etching in this case is a holographically formed semicircle or sinusoidal cross section. be.

したがって、シャドウ効果が十分でなく、性能の良いブ
レーズド格子が製作できないという欠点がありだ。
Therefore, the shadow effect is insufficient and a blazed grid with good performance cannot be manufactured.

本発明の目的は、上記の欠点を除去せしめた高品質のブ
レーズド格子をイオンエツチングで形成する方法を提供
することである。
It is an object of the present invention to provide a method for forming high-quality blazed gratings by ion etching, which eliminates the above-mentioned drawbacks.

本発明のブレーズド格子の形成方法は、被加工基板面上
に被加工基板材料よりもイオンエツチング速度の遅い第
1のホトレジストを塗布する工程を形成する工程と、前
記回折格子をマスクとして前記金属膜を化学エツチング
し金属膜を矩形断面の格子パターンに形成する工程と、
前記矩形断面の格子パターンを遮蔽マスクとしてマスク
上面方向から紫外光で前記第1のホトレジスト層を露光
し、前記第1のホトレジストを現像処理して矩形断面の
回折格子を形成する工程と、前記金属膜を除去した後、
格子の周期分布方向でかつ、基板面に対して斜め上面方
向からイオンエツチングする工程とを含むことを特徴と
するブレーズド格子の形成方法である。
The method for forming a blazed grating of the present invention includes the steps of: applying a first photoresist having an ion etching rate lower than that of the material of the substrate to be processed on the surface of the substrate to be processed, and etching the metal film using the diffraction grating as a mask. a step of chemically etching the metal film to form a lattice pattern with a rectangular cross section;
exposing the first photoresist layer to ultraviolet light from the top surface of the mask using the grating pattern with the rectangular cross section as a shielding mask, and developing the first photoresist to form a diffraction grating with the rectangular cross section; After removing the membrane,
This method of forming a blazed grating is characterized in that it includes the step of performing ion etching in the periodic distribution direction of the grating and from the diagonal upper surface direction with respect to the substrate surface.

以下1本発明について図面を参照して詳細に説明する。The present invention will be described in detail below with reference to the drawings.

第1図から第9図は1本発明による一実施例を工程の順
に説明するための断面図である3、第1図は被加工基板
lの面上に被加工基板材料よりもエツチング速度の遅い
第1のホトレジスト2を塗布した状態を示す断面図であ
る。被加工基板としては、イオンエツチング速度の早い
材料であるのが望ましく、エツチング速度の早い材料と
してはInP、GaAs、Au+ Ag等があるが2本
実施例をスピンナーで塗布した。ホトレジスト層2の膜
厚は形成する格子ピッチにより異なり0.3〜1.0μ
篇とした。この第1のホトレジスト層2を焼しめた後、
第2図に示すよ5に、金属膜3例えばA u、 Cr、
 N i + Cuを数1000入形成した。さらに金
属膜3の上に第2のホトレジスト4をg3図に示すよう
に塗布した。第2のホトレジスト4としては第1のホト
レジスト2と同じAZ−1350Jを用い膜厚を0.3
〜1.0μ落としスピンナーで塗布した。次に、第2の
ホトレジスト膜4にホログラフィックレリーフ格子を形
成するためK 、He −Cdレーザを光源とする2光
束干渉計で干渉縞をホトレジスト膜に露光し現像した。
1 to 9 are cross-sectional views for explaining an embodiment of the present invention in the order of steps. 3. FIG. FIG. 3 is a cross-sectional view showing a state in which a slow first photoresist 2 is applied. It is desirable that the substrate to be processed be made of a material that has a high ion etching rate, and examples of materials that have a high etching rate include InP, GaAs, Au+Ag, etc., and two of these materials were coated using a spinner. The film thickness of the photoresist layer 2 varies depending on the lattice pitch to be formed, and is 0.3 to 1.0 μm.
It was made into an edition. After baking this first photoresist layer 2,
As shown in FIG. 2, at 5, a metal film 3 such as Au, Cr,
Several thousand pieces of N i + Cu were formed. Furthermore, a second photoresist 4 was applied on the metal film 3 as shown in Figure g3. As the second photoresist 4, the same AZ-1350J as the first photoresist 2 was used, and the film thickness was 0.3.
It was applied with a ~1.0 μ drop spinner. Next, in order to form a holographic relief grating on the second photoresist film 4, interference fringes were exposed and developed on the photoresist film using a two-beam interferometer using a K, He--Cd laser as a light source.

第4図は現像後の状態を示す断面図である。なお、レー
ザ干渉計を用いるかわりに、銀塩乾板に記録した干渉縞
を濃淡マスクとしてυ■光で密着焼付けによっても第4
図に示すようなホーグラフィックレリーフ格子を形成で
きる。
FIG. 4 is a sectional view showing the state after development. In addition, instead of using a laser interferometer, the interference fringes recorded on a silver salt dry plate can be used as a density mask and contact printing with υ■ light can also be used to obtain the fourth image.
A holographic relief grating as shown in the figure can be formed.

第4図に示したような試別を化学エツチング液例えば金
属膜3がAuの場合ヨウ化カリウムとヨ、声イクとして
金属層3にほば矩形断面の格子を形成・4ることができ
る。次に、第6図に示すように試俗の格子上面から紫外
光(UV光)5で露光する。
A lattice having a nearly rectangular cross section can be formed on the metal layer 3 by using a chemical etching solution as shown in FIG. 4, for example, potassium iodide when the metal film 3 is Au. Next, as shown in FIG. 6, the top surface of the grid is exposed to ultraviolet light (UV light) 5.

矩形断面゛した金属層の格子パターンが紫外光の遮蔽マ
スクとなり、ホトレジストのガンマが高いので第1のレ
ジスト漸2に矩形形状断面の格子を形成できる。第7図
は現像後の状態を示す断面図である。第2のホトレジス
トの格子4は紫外光5で感光し現像時に溶けてなくなる
。次に、第8図建水すように前述した金属膜の化学エッ
グーング液と同じもので金属層3を除去した矩形格子を
シャドウマスクとして格子の周期分布方向の斜め上面か
らイオンビーム6(アルゴンイオン又は酸素イオン)で
前記矩形格子マスク2が無くなるまでエツチングを行う
と、第9図に示すような7シ・−ズド格子が形成される
。エツチング時間は、第1のホトレジスト材のエツチン
グ速度9入射角度依イf性を調べ、設定するイオンビー
ムエツチング角度から算出される。
The lattice pattern of the metal layer with a rectangular cross section serves as a mask for shielding ultraviolet light, and since the gamma of the photoresist is high, a lattice with a rectangular cross section can be formed in the first resist layer 2. FIG. 7 is a sectional view showing the state after development. The second photoresist grid 4 is exposed to ultraviolet light 5 and melts away during development. Next, as shown in Figure 8, a rectangular lattice with the metal layer 3 removed using the same chemical egging solution for the metal film as described above was used as a shadow mask, and an ion beam 6 (argon ion When the rectangular lattice mask 2 is etched with (or oxygen ions) until the rectangular lattice mask 2 disappears, a seven-seased lattice as shown in FIG. 9 is formed. The etching time is calculated from the ion beam etching angle to be set by examining the dependence of the etching rate 9 on the incident angle of the first photoresist material.

本実施例においては、ベース基板を被加工旧料とした場
合を説明したが、被加工層をtW II”Aとした被加
工基板例えば、エツチングレートの早い有機いた場合に
も本方法を適用できる。
In this example, the case where the base substrate is an old material to be processed is explained, but this method can also be applied to the case where the substrate to be processed is made of tW II"A as the base substrate, for example, an organic material with a fast etching rate. .

以上詳述したように本発明の方1去を用いることで、−
ホログラム格子をエツチングするブレーズ化において、
高性能のブレーズド格子が得られる。
As detailed above, by using method 1 of the present invention, -
In blazing, which involves etching a hologram grating,
A high-performance blazed grid is obtained.

【図面の簡単な説明】[Brief explanation of drawings]

第1図から第9図は本発明による各プロセス11凱[で
の基板状態の断面図である。図によ夕いて、]は岐加工
基板22は第1のホトレジスト膜、3は金属膜、4は第
2のホトレジスト膜、5は紫外光、6はイオンビームで
ある。
1 to 9 are cross-sectional views of the substrate state in each process 11 according to the present invention. As shown in the figure, the branched substrate 22 is a first photoresist film, 3 is a metal film, 4 is a second photoresist film, 5 is an ultraviolet light beam, and 6 is an ion beam.

Claims (1)

【特許請求の範囲】 被加工基板面上に被加工基板材料よりもイオンエッチン
グ速度の遅い第1のホトレジストを塗布する工程と、前
記第1のホトレジスト膜上に金属膜を形成する工程と、
前記金属膜上に第2のホトレジスト膜を塗布する工程と
、塗布された第2のホトレジスト膜にレリーフ型のホロ
グラフィック回折格子を形成する工程と、前記回折格子
をマスクとして前記金属膜を化学エツチングし金属膜を
矩形断面の格子パターンに形成する工程と、前記矩形断
面の格子パターンを遮蔽マスクとしてマスク上面方向か
ら紫外光で前記第1のホトレジスト層をi光し、1前記
第1のホトレジストを現像処理して矩形断面の回折格子
を形成する工程と、前記金属膜を除去した後、格子の周
期分布方向でかつ。 基板面に対して斜め上面方向からイオンエツチングする
工程とを含むことを特徴とするブレーズド格子の形成方
法。
[Scope of Claims] A step of applying a first photoresist having a slower ion etching rate than the material of the substrate to be processed on the surface of the substrate to be processed, and a step of forming a metal film on the first photoresist film,
a step of applying a second photoresist film on the metal film, a step of forming a relief-type holographic diffraction grating on the applied second photoresist film, and a step of chemically etching the metal film using the diffraction grating as a mask. forming a metal film in a lattice pattern with a rectangular cross section, and using the lattice pattern with a rectangular cross section as a shielding mask, the first photoresist layer is illuminated with ultraviolet light from the upper surface of the mask; A process of developing to form a diffraction grating with a rectangular cross section, and after removing the metal film, the process is performed in the direction of the periodic distribution of the grating. 1. A method for forming a blazed grating, comprising the step of performing ion etching from an oblique upper surface direction with respect to a substrate surface.
JP19084983A 1983-10-14 1983-10-14 Formation of blazed grating Pending JPS6083902A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19084983A JPS6083902A (en) 1983-10-14 1983-10-14 Formation of blazed grating

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19084983A JPS6083902A (en) 1983-10-14 1983-10-14 Formation of blazed grating

Publications (1)

Publication Number Publication Date
JPS6083902A true JPS6083902A (en) 1985-05-13

Family

ID=16264793

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19084983A Pending JPS6083902A (en) 1983-10-14 1983-10-14 Formation of blazed grating

Country Status (1)

Country Link
JP (1) JPS6083902A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013056637A1 (en) * 2011-10-19 2013-04-25 苏州大学 Method for manufacturing holographic blazed grating

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013056637A1 (en) * 2011-10-19 2013-04-25 苏州大学 Method for manufacturing holographic blazed grating
US9864113B2 (en) 2011-10-19 2018-01-09 Soochow University Method for manufacturing holographic blazed grating

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