JPS6094765A - Window opening shape of external pickup metal electrode of semiconductor element - Google Patents
Window opening shape of external pickup metal electrode of semiconductor elementInfo
- Publication number
- JPS6094765A JPS6094765A JP58203448A JP20344883A JPS6094765A JP S6094765 A JPS6094765 A JP S6094765A JP 58203448 A JP58203448 A JP 58203448A JP 20344883 A JP20344883 A JP 20344883A JP S6094765 A JPS6094765 A JP S6094765A
- Authority
- JP
- Japan
- Prior art keywords
- corner
- pad electrode
- window opening
- corners
- farther
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/931—Shapes of bond pads
- H10W72/932—Plan-view shape, i.e. in top view
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/981—Auxiliary members, e.g. spacers
- H10W72/983—Reinforcing structures, e.g. collars
Landscapes
- Electrodes Of Semiconductors (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
く技術分野〉
本発明は、耐湿に関する信頼性を向上させるだめの半導
体素子の外部取り出し電極部(以下「パッド電極」と呼
ぶ)の保護膜の窓開は形状(以下、単[r窓開は形状」
と呼ぶ〕に関するものである。[Detailed Description of the Invention] [Technical Field] The present invention aims to improve the reliability with respect to moisture resistance. , simple [r aperture is shape]
].
〈従来技術〉
現在もっとも広く用いられているパッド電極部1び窓開
は形状を第1図に示す。<Prior Art> The shape of a pad electrode portion 1 and aperture, which are currently most widely used, is shown in FIG.
図に於て、lはパッド電極、2は内部配線、3は窓開は
部である。In the figure, 1 is a pad electrode, 2 is an internal wiring, and 3 is a window opening.
しかしながら、この窓開は形状でf(J以下に示す■、
■の弱点がある。However, this window opening has a shape of f (■ shown below J,
■There are weaknesses.
■ 半導体素子は、大寸かに言って、不純物の拡散工程
、蒸着工程、露光エツチング工程等を繰り返してウェハ
上にチップを形成し、その後、個別素子に分割するチッ
ピング工程、ダイ及びワイヤーボンディング工程、モー
ルド工程を通って素子が完成する。チッピング工程では
現在主にダイシング方法(工程)が用いられている。■ Semiconductor devices, to put it on a large scale, require repeated steps such as impurity diffusion, vapor deposition, and exposure etching to form chips on a wafer, followed by a chipping process to separate them into individual devices, and a die and wire bonding process. , the device is completed through a molding process. Currently, a dicing method (process) is mainly used in the chipping process.
ダイシング工程はウェハに水を流しながらダイシング・
ソウで基盤の目状に溝を切る工程である。この工程では
ダイシングすることによりシリコンの切り粉及びダイシ
ング・ソウの摩耗ぐずがウェハ全面をおおってし1つ。The dicing process involves dicing while running water on the wafer.
This is the process of cutting grooves in the shape of the base with a saw. In this process, the entire surface of the wafer is covered with silicon chips and debris from the dicing saw due to dicing.
次に、ウェハを水洗することにより、これらのごみを除
去するが、一部分は除去できなくてウェハ上に残る。次
の乾燥工程で、除去できなかったシリコンの微小粒は次
の様なメカニズムで窓開は部の角部に固着される。Next, the wafer is washed with water to remove these dusts, but some of them cannot be removed and remain on the wafer. In the next drying process, the silicon particles that could not be removed are stuck to the corners of the window opening by the following mechanism.
乾燥の初期にはウェハ全面に水膜が形成されており、乾
燥が進むにつれて水膜は薄くなり、完全乾燥する直前に
は水膜は一様でなくなり、小さな島状のあつ捷りになる
。その島状になる位置は水の表面張力が強く作用する鋭
角的な角部である。そして、水分が完全に乾燥すると、
その角部にシリコンの微小粒が固着される。At the beginning of drying, a water film is formed over the entire surface of the wafer, and as the drying progresses, the water film becomes thinner, and just before complete drying, the water film becomes uneven and becomes small island-like spots. The locations where these islands form are sharp corners where the surface tension of water acts strongly. Then, when the water is completely dried,
Microscopic silicon particles are fixed to the corners.
上記のメカニズムはパッド電極の窓開は部でも同様な事
が起こる。グイシング工程後の乾燥工程で、第1図に示
す窓開は部のどの角部にシリコンの微小粒が固着するか
は、水の表面張力を左右する形状が同一なので、各角部
とも同等で決まらない。一方、ウェハ上の水の中には、
上記のシリコンの微小粒以外に、ダイシング・ソウの摩
耗くず及び雰囲気中より混入した不純物が存在する。こ
の混入物はチップが封止されるとき同時に封止される。The above mechanism also occurs at the opening of the pad electrode. In the drying process after the guising process, it is determined at which corner of the aperture shown in Figure 1 the silicon microparticles will adhere, as the shape that influences the surface tension of water is the same, so each corner is the same. Not determined. On the other hand, in the water on the wafer,
In addition to the silicon microparticles mentioned above, there are wear debris from the dicing saw and impurities mixed in from the atmosphere. This contaminant is encapsulated at the same time as the chip is encapsulated.
その結果、この様な半導体素子が長期間、放置(保管)
あるいけ使・、用されると、この混合物がパッド電極の
腐食をゝ・(・
パ〕9゛誘起する。もし、混合物が第1図のAの角部に
固着し、そこよりパッド電極腐食を起こしたならば、断
線にいたる寿命は、他の角部(B、C。As a result, such semiconductor devices are left unused (stored) for long periods of time.
When used in a certain way, this mixture induces corrosion of the pad electrode. If this happens, the lifespan leading to wire breakage will be longer than the other corners (B, C).
D)に比べて短くなる。It will be shorter than D).
■ 樹脂封止素子全長期にわたり使用1〜でいると、初
期にはチップ表面と樹脂とが密着していたものが、その
後、雰囲気中の水分を吸収するとか、あるいは素子を動
作させることによる熱ストレスにより、チップと樹脂と
の密着が悪くなり、ついには剥離してし捷う。剥離した
界面に樹脂に吸収されていた水分が浸入し、その川が多
くなると、その界面に水膜を作る。その剥1111[界
面はチップの端に多く発生し、もし、その界面が第1図
に示すパッド電極部なら、その水膜d角部のA、B、C
,Dのどの角に付イ1するかシJ14角同格で決1らな
い。もし、この水膜の付イキした所が、Aj以外のB、
C,Dなら、たとえそこから腐食を起こしても、内部配
線が腐食し電気的に断線するまでには長時間かかる01
〜かし、Aが腐食すれば短時間で断線してLetつ弱点
ケもっている。■ If a resin-sealed element is used for a long period of time, the chip surface and the resin may initially be in close contact with each other, but then the resin may absorb moisture in the atmosphere or become heated due to the operation of the element. Due to stress, the adhesion between the chip and the resin deteriorates, and the chip eventually peels off and shatters. Water absorbed by the resin enters the separated interface, and when the flow increases, a water film forms at the interface. The peeling 1111 [interface occurs often at the edge of the chip, and if the interface is the pad electrode shown in Figure 1, the water film d corner A, B, C
, I can't decide which corner of D to attach A1 to by J14 angle appositive. If the place where this water film is attached is B other than Aj,
For C and D, even if corrosion occurs from there, it will take a long time for the internal wiring to corrode and become electrically disconnected01
However, if A corrodes, it will break in a short period of time, leaving one weak point.
〈発明の目的及び概要〉
本発明は上記■、■の弱点を改善することを目的とする
ものであり、その窓開は形状は、内部配線側は円弧のよ
うな清ら力)な曲線構造をもち、その逆側(チップの端
側)は、鋭角的な角で且つその先端に細長いスリットヲ
持つことを特徴とするものである。<Purpose and Summary of the Invention> The present invention aims to improve the weaknesses described in (1) and (3) above. The opposite side (end side of the chip) is characterized by having an acute angle and a long and narrow slit at the tip.
〈実施例〉
第2図(a)、(b)及び(C)に本発明の実施例形状
を示す。<Example> Figures 2 (a), (b) and (C) show shapes of examples of the present invention.
」二記谷図に於て、4はパッド電極、5は内部配線・6
は窓開は部である。” In the Nikiya diagram, 4 is the pad electrode, 5 is the internal wiring, 6
The windows are open.
第2図(a)に示すものは、A、B、Cの角部の形状を
円弧状とし、Dの角部にスリットを設けたもの、まだ、
第2図(b)に示すものは、A、Cの角部の形状を円弧
状とし、B、Dの角部にスリットを設けたもの、更に、
第2図(C)に示すものは、Aの角部の形状を円弧状と
し、B、C,Dの角部にスリットを設けたものである。The one shown in Fig. 2(a) has the corners A, B, and C shaped like arcs, and the corner D has a slit.
The one shown in FIG. 2(b) has the corners A and C shaped like an arc, and the corners B and D provided with slits.
In the case shown in FIG. 2(C), the corner of A has an arcuate shape, and the corners of B, C, and D are provided with slits.
〈効 果〉
以上に説明した本発明の窓開は形状とすることにより、
■ 従来方式の弱点■の所で述べた、ダイシング工程か
ら乾燥工程でパッド電極部に伺イ1するシリコンの微小
粒、ダイシング・ソウの摩耗ぐず及び雰囲気中の不純物
を、水の表面張力を利用して、内部配線に近い角部(A
)より遠い角部(n。<Effects> By shaping the aperture of the present invention as described above, it is possible to reduce the amount of silicon microscopic particles that penetrate into the pad electrode portion from the dicing process to the drying process, as described in the section ① Weaknesses of the conventional method ③. Using the surface tension of water, the wear debris of the dicing saw and impurities in the atmosphere are removed from the corners (A) near the internal wiring.
) more distant corner (n.
C,D)に固定する。そこで、もし、これら混入物がパ
ッド電極腐食を誘発しても、腐食部分と内部配線5との
間に距離があるだめ、少なくとも、腐食がこの距離進行
する時間、断線する寿命を長くできる。C, D). Therefore, even if these contaminants induce corrosion of the pad electrode, since there is a distance between the corroded part and the internal wiring 5, at least the time it takes for the corrosion to progress this distance, and the life before disconnection can be extended.
@ 従来方式の弱点■の所で述べた、長期間の使用によ
り、樹脂とチップ表面間に剥肉[1が起こり、その界面
に水膜が発生したとしても、第2図に示す角部に鋭角的
な角と且つ細長いスリット全設けることで、発生する水
膜を内部配線より遠しても、内部配線より遠い所で発生
するので、断線するためには腐食が内部配線寸で進行す
る必要があり、その結果、断線にいたる寿命は、従来方
式に比べて(第1図のAに腐食が起こった場合に比べて
)長くなる。@ As mentioned in the weak point of the conventional method (■), due to long-term use, peeling [1] occurs between the resin and the chip surface, and even if a water film forms at the interface, the corner part shown in Figure 2 By providing all the sharp corners and long and narrow slits, even if the water film that occurs is far away from the internal wiring, it will occur at a location further away from the internal wiring, so corrosion must progress to the extent of the internal wiring in order for the wire to break. As a result, the life until disconnection becomes longer than in the conventional method (compared to the case where corrosion occurs at A in FIG. 1).
なお、本発明に於ては、内部配線と逆の側の形状を、鋭
角的な角で且つ細長いスリットヲもつ形状にしているが
、何れか一方の条件のみ満足するような形状としても、
はぼ同様の効果が得られるであろう。In addition, in the present invention, the shape of the side opposite to the internal wiring is made into a shape with acute angles and an elongated slit, but a shape that satisfies only one of the conditions may also be used.
A similar effect will be obtained.
第1図並びに第2図(a)、 (b)及び(c)は何れ
もパッド電極と保護膜の窓開は形状を示す図である。
符号の説明
4:パッド電極、5:内部配線、6:窓開は部、A 、
B 、C+ n :角部。
代理人 弁理士 福 士 愛 彦(他2名)味FIG. 1 and FIGS. 2(a), (b), and (c) all show the shapes of the pad electrodes and the apertures of the protective film. Explanation of symbols 4: Pad electrode, 5: Internal wiring, 6: Window opening, A,
B, C+n: Corner. Agent Patent Attorney Aihiko Fuku (and 2 others)
Claims (1)
を円弧等の滑らかな曲線で構成し、逆の側は鋭角的な角
でHつ+lll長いスリッl−i持つ構成としたことを
特徴とする、半導体素子の外部取り出し金属電極部の窓
開は形状。1 The window opening at the corner of the metal electrode part leading to the internal active part is configured with a smooth curve such as a circular arc, and the opposite side has an acute corner with a long slit. The shape of the aperture in the external metal electrode part of the semiconductor element is characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58203448A JPS6094765A (en) | 1983-10-28 | 1983-10-28 | Window opening shape of external pickup metal electrode of semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58203448A JPS6094765A (en) | 1983-10-28 | 1983-10-28 | Window opening shape of external pickup metal electrode of semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6094765A true JPS6094765A (en) | 1985-05-27 |
Family
ID=16474282
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58203448A Pending JPS6094765A (en) | 1983-10-28 | 1983-10-28 | Window opening shape of external pickup metal electrode of semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6094765A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5804883A (en) * | 1995-07-13 | 1998-09-08 | Samsung Electronics Co., Ltd. | Bonding pad in semiconductor device |
-
1983
- 1983-10-28 JP JP58203448A patent/JPS6094765A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5804883A (en) * | 1995-07-13 | 1998-09-08 | Samsung Electronics Co., Ltd. | Bonding pad in semiconductor device |
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