JPS61102004A - Manufacturing method of voltage nonlinear resistance element - Google Patents
Manufacturing method of voltage nonlinear resistance elementInfo
- Publication number
- JPS61102004A JPS61102004A JP59224412A JP22441284A JPS61102004A JP S61102004 A JPS61102004 A JP S61102004A JP 59224412 A JP59224412 A JP 59224412A JP 22441284 A JP22441284 A JP 22441284A JP S61102004 A JPS61102004 A JP S61102004A
- Authority
- JP
- Japan
- Prior art keywords
- resistance element
- manufacturing
- voltage
- nonlinear resistance
- voltage nonlinear
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Thermistors And Varistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は酸化亜鉛を主成分とする電圧非直線抵抗素子の
製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for manufacturing a voltage nonlinear resistance element containing zinc oxide as a main component.
従来例の構成とその問題点
電圧非直線抵抗特性を有するセラミックスとしてSiC
バリスタや酸化亜鉛を主成分とするバリスタがある。か
かるバリスタは電流σ)−電圧(!/)特性が近似的に
、
I−(V−)Ct
で表わされるものである。ここで、Cはバリスタ固有の
定数であシ、αは電圧非直線指数である・SiCバリス
タはSiC粒子間の接触バリアを利用したものであり、
αは2〜7程度である。最近ではバリスタとして主流を
占めているのが酸化亜鉛を主成分とするバリスタであ・
る。この酸化亜鉛バリスタは酸化亜鉛(ZnO)K B
i2O3,Coo 、 MnO2゜5b205等の金属
酸化物を微量添加して焼成することによシ得られる素子
であり、その電圧非直線指数αが6oにも及ぶ素子であ
る。この酸化亜鉛バリスタは高電圧吸収に優れた性能を
有しているので、電子機器の安定化や異常高電圧(サー
ジ)か暫
らの保護の目的で使用されている。Conventional configuration and its problems SiC is used as a ceramic material with voltage non-linear resistance characteristics.
There are baristas and baristas whose main ingredient is zinc oxide. The current σ)-voltage (!/) characteristic of such a varistor is approximately expressed as I-(V-)Ct. Here, C is a constant specific to the varistor, and α is a voltage nonlinear index.SiC varistors utilize contact barriers between SiC particles,
α is about 2 to 7. Recently, the mainstream type of varistor is a varistor whose main ingredient is zinc oxide.
Ru. This zinc oxide varistor is made of zinc oxide (ZnO) K B
This is an element obtained by adding a small amount of a metal oxide such as i2O3, Coo, MnO2°5b205, etc. and firing it, and its voltage nonlinearity index α is as high as 6o. This zinc oxide varistor has excellent performance in absorbing high voltages, so it is used for the purpose of stabilizing electronic equipment and temporarily protecting it from abnormal high voltages (surges).
通常、酸化亜鉛を主成分とする電圧非直線抵抗素子を作
る時に、素子に異常高電圧が印加された時の電圧抑制効
果を良くするためて、3価の原子を添加する。これは3
価の原子が酸化亜鉛粒子に固溶することによシ原子価制
御効果によって酸化亜鉛の比抵抗を低下させるからであ
る。しかし、添加する3価の原子の最適量は極めて微量
1゜。。。モル%未満では電圧抑制効果が少なく、また
−100モル%を超えると電圧非直線指数αが悪くなり
、通常の使用条件では漏れ電流が増えてしまい、実用的
でなくなる。そのだめ3価の原子の添加には細心の注意
を払い、原料中に均一に分散させねばならない。通常は
3価の原子としてA1原子を用い、人12o3の微量添
加を行う。Normally, when making a voltage nonlinear resistance element mainly composed of zinc oxide, trivalent atoms are added to improve the voltage suppression effect when an abnormally high voltage is applied to the element. This is 3
This is because the specific resistance of zinc oxide is lowered by the valence control effect due to the solid solution of valence atoms in the zinc oxide particles. However, the optimum amount of trivalent atoms to be added is an extremely small amount of 1°. . . If it is less than mol %, the voltage suppressing effect will be small, and if it exceeds -100 mol %, the voltage nonlinearity index α will deteriorate, and leakage current will increase under normal usage conditions, making it impractical. Therefore, careful attention must be paid to the addition of trivalent atoms and they must be uniformly dispersed in the raw material. Usually, an A1 atom is used as a trivalent atom, and a trace amount of 12o3 is added.
通常の製造工程においては、まず規定量のBi、2o3
゜CO□03 r MnO□等の添加物とAl203を
ポットで湿式混合を行い、その後混合済の添加物と主原
料のZnOラブイスパーミルもしくはトロンミルで湿式
混合し、その混合物をスプレードライヤを用いて乾燥、
造粒を行い、造粒粉をつくる。この造粒粉を成形し、そ
れを焼成して、電極を形成することにより電圧非直線抵
抗素子を得ている。しかしながら、Al205が他の原
料と比べて極めて微量であること、さらにポット等によ
る機械的な力による混合であるので、人1の分散状態が
十分でなく。In the normal manufacturing process, first a specified amount of Bi, 2o3
゜CO□03r Additives such as MnO□ and Al203 are wet-mixed in a pot, and then the mixed additives are wet-mixed with the main raw material ZnO in a Lab Isper mill or Thoron mill, and the mixture is dried using a spray dryer. drying,
Perform granulation to create granulated powder. A voltage nonlinear resistance element is obtained by molding this granulated powder and firing it to form an electrode. However, since the amount of Al205 is extremely small compared to other raw materials, and since the mixing is done by mechanical force using a pot or the like, the state of dispersion of the material 1 is not sufficient.
部分的にAlの濃度分布ができ、電圧非直線抵抗素子の
電気的特性の不安定さを生んでいる。A partial concentration distribution of Al occurs, causing instability in the electrical characteristics of the voltage nonlinear resistance element.
発明の目的
本発明の目的は上記欠点に鑑み、電圧抑制効果に優れた
電圧非直線抵抗素子を特性のバラツキなく製造する製造
方法を提供することにある。OBJECTS OF THE INVENTION In view of the above-mentioned drawbacks, an object of the present invention is to provide a manufacturing method for manufacturing a voltage nonlinear resistance element having an excellent voltage suppressing effect without variations in characteristics.
発明の構成
この目的を達成するために本発明の電圧非直線抵抗素子
の製造方法は、酸化亜鉛を主成分とする粉粒体の造粒粉
に、超音波霧化装置から発生した人1原子を有する液体
微粒子を付着させることによって、粉粒体中のAl原子
の分布を均一にし、安定した特性の電圧非直線抵抗素子
を得ることができるようにしだものである。通常、スプ
レードライヤーで造粒された酸化亜鉛を主成分とする造
粒粉は平均粒径が100〜150μmであり、一方超音
波霧化装置により発生した液体微粒子の平均粒径は5〜
10μmであシ、造粒粉に均等に付着し、造粒粉中にA
l濃度の濃淡を作ることはない。Structure of the Invention In order to achieve this object, the method for manufacturing a voltage non-linear resistance element of the present invention is to provide a method for manufacturing a voltage non-linear resistance element of the present invention. By adhering liquid fine particles having a uniformity of 0.05 to 100%, it is possible to make the distribution of Al atoms in the powder uniform and to obtain a voltage nonlinear resistance element with stable characteristics. Usually, granulated powder mainly composed of zinc oxide granulated with a spray dryer has an average particle size of 100 to 150 μm, while the average particle size of liquid particles generated by an ultrasonic atomizer is 5 to 150 μm.
It is 10 μm thick and adheres evenly to the granulated powder, and A in the granulated powder.
l It does not create shading of density.
実施例の説明
以下、本発明の一実施例について図面を参照しながら説
明する。DESCRIPTION OF EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.
図は本発明の電圧非直線抵抗素子の製造方法を実施する
だめの装置の一実施例を示す模式図である。1はスプレ
ードライヤー、2は造粒粉、3は中空容器、4は超音波
霧化装置、5はA1原子を含有する液体、6は加湿部、
7は加湿され人1原子を付着した造粒粉、8は造粒粉の
収納容器である。The figure is a schematic diagram showing an embodiment of an apparatus for carrying out the method of manufacturing a voltage nonlinear resistance element of the present invention. 1 is a spray dryer, 2 is a granulated powder, 3 is a hollow container, 4 is an ultrasonic atomizer, 5 is a liquid containing A1 atoms, 6 is a humidifying section,
7 is a granulated powder that has been humidified and has one human atom attached thereto, and 8 is a storage container for the granulated powder.
まず、ZnOの粉末2ooKpにBi2O3,Coo
。First, add Bi2O3, Coo to ZnO powder 2ooKp.
.
MnO2,5b205. NiOをそれぞれ0.1〜1
モル%加え、純水、有機パ゛インダーを加え、ディスパ
ーミルを用い混合した。次に、こうして得られたスラリ
ー状の混合物をスプレードライヤー1を用い、乾燥、造
粒を行った。次に、硝酸アルミニウム(Al(NO5)
3・9H2o)を水に溶カシ、Al原子を含有する液体
5を用意し、超音波霧化装置4によシ液体微粒子を作っ
た。水溶液は人1(No5)5・9H20の5%溶液と
じた。次に、図に示すようにスプレードライヤー1から
造粒粉2が中空容器3の中に注がれる。一方、中空容器
3の壁面の貫通孔に超音波霧化装置4よシの人1原子を
含有する液体微粒子の吹き出し口を差し込み、中空容器
3内に霧状の液体微粒子を注入し、造粒粉2の表面にA
1原子を含有する液体微粒子を付着させる加湿部6を作
り出す。MnO2,5b205. 0.1 to 1 NiO each
% by mole, pure water and organic binder were added and mixed using a disper mill. Next, the slurry-like mixture thus obtained was dried and granulated using a spray dryer 1. Next, aluminum nitrate (Al(NO5)
A liquid 5 containing Al atoms was prepared by dissolving 3.9H2o) in water, and an ultrasonic atomizer 4 was used to produce liquid fine particles. The aqueous solution was a 5% solution of Human 1 (No. 5) 5.9H20. Next, as shown in the figure, granulated powder 2 is poured into a hollow container 3 from a spray dryer 1. On the other hand, the outlet of the ultrasonic atomizer 4 for liquid particles containing one atom is inserted into the through hole in the wall of the hollow container 3, and the atomized liquid particles are injected into the hollow container 3 and granulated. A on the surface of powder 2
A humidifying section 6 is created to which liquid fine particles containing one atom are attached.
そして、表面にA1原子を付着させた造粒粉7を収納容
器8に入れた。ここで、水溶液の使用量は造粒粉2oo
Kyに対し、霧化量5000ccであった。次に、これ
らの造粒粉を油圧成形機で400Kp / crlの圧
力で25φ×2t(朋)に成形し、1200℃でもって
6時間、空気中で焼成した。この焼結体の形状は20φ
×1.6t(M)であった。この焼結体の側平面に銀電
極を塗布し、800’Cで焼付け、電気特性を測定した
。その結果、バリスタ電圧v+ m A ”’ 20o
Vで、電圧抑制効果を表わす制限電圧特性はv4001
/vjmA” ” 45で、標準偏差は0.015であ
った。Then, the granulated powder 7 having A1 atoms attached to its surface was placed in a storage container 8. Here, the amount of aqueous solution used is 2oo of granulated powder.
The atomization amount was 5000 cc with respect to Ky. Next, these granulated powders were molded into a size of 25φ x 2t using a hydraulic molding machine at a pressure of 400Kp/crl, and fired in air at 1200°C for 6 hours. The shape of this sintered body is 20φ
×1.6t (M). A silver electrode was applied to the side surface of this sintered body, baked at 800'C, and the electrical properties were measured. As a result, the varistor voltage v + m A ”' 20o
V, the limiting voltage characteristic that represents the voltage suppression effect is v4001
/vjmA""45, and the standard deviation was 0.015.
一方、従来法で作った素子の特性はv、=2ooy。On the other hand, the characteristics of the device made using the conventional method are v, = 2ooy.
v4oo、/v、In、=1.50で、 標準偏差は0
.076で、本発明の製造方法が優れていることがわか
る。v4oo, /v, In, = 1.50, standard deviation is 0
.. 076, it can be seen that the manufacturing method of the present invention is superior.
発明の効果
以上、詳細に述べたように本発明は酸化亜鉛を主成分と
する粉粒体の造粒粉に超音波霧化装置から発生したAl
原子を含有する液体微粒子を付着させることによシ、電
圧抑制効果が優れ、特性のバラツキの少ない電圧非直線
抵抗素子を提供することができ、その実用的価値は大な
るものがある。Effects of the Invention As described in detail above, the present invention has the advantage of adding Al generated from an ultrasonic atomization device to granulated powder containing zinc oxide as a main component.
By attaching liquid fine particles containing atoms, it is possible to provide a voltage nonlinear resistance element that has an excellent voltage suppression effect and less variation in characteristics, and has great practical value.
図は本発明の電圧非直線抵抗素子の製造方法を実施する
だめの装置の一実施例を示す模式図である。
1・・・・・・スプレードライヤー、2・・・・・・造
粒粉、3・・・・・・中空容器、4・・・・・・超音波
霧化装置、5・・・・・・Al原子を含有する液体、6
・・・・・・加湿部、7・・・・・・加湿されAl原子
を付着した造粒粉、8・・・・・・造粒粉の収納容器。The figure is a schematic diagram showing an embodiment of an apparatus for carrying out the method of manufacturing a voltage nonlinear resistance element of the present invention. 1... Spray dryer, 2... Granulated powder, 3... Hollow container, 4... Ultrasonic atomizer, 5...・Liquid containing Al atoms, 6
... Humidification section, 7 ... Granulated powder that has been humidified and has Al atoms attached, 8 ... Storage container for granulated powder.
Claims (1)
装置から発生したAl原子を有する液体微粒子を付着さ
せることを特徴とする電圧非直線抵抗素子の製造方法。A method for manufacturing a voltage nonlinear resistance element, which comprises attaching liquid fine particles containing Al atoms generated from an ultrasonic atomizer to a granulated powder containing zinc oxide as a main component.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59224412A JPS61102004A (en) | 1984-10-25 | 1984-10-25 | Manufacturing method of voltage nonlinear resistance element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59224412A JPS61102004A (en) | 1984-10-25 | 1984-10-25 | Manufacturing method of voltage nonlinear resistance element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61102004A true JPS61102004A (en) | 1986-05-20 |
Family
ID=16813361
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59224412A Pending JPS61102004A (en) | 1984-10-25 | 1984-10-25 | Manufacturing method of voltage nonlinear resistance element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61102004A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6442803A (en) * | 1987-08-11 | 1989-02-15 | Ngk Insulators Ltd | Voltage-dependent nonlinear resistor |
-
1984
- 1984-10-25 JP JP59224412A patent/JPS61102004A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6442803A (en) * | 1987-08-11 | 1989-02-15 | Ngk Insulators Ltd | Voltage-dependent nonlinear resistor |
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