JPS61111521A - 縦型気相成長装置 - Google Patents
縦型気相成長装置Info
- Publication number
- JPS61111521A JPS61111521A JP60173263A JP17326385A JPS61111521A JP S61111521 A JPS61111521 A JP S61111521A JP 60173263 A JP60173263 A JP 60173263A JP 17326385 A JP17326385 A JP 17326385A JP S61111521 A JPS61111521 A JP S61111521A
- Authority
- JP
- Japan
- Prior art keywords
- furnace
- gas
- vapor phase
- growth
- phase growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2907—Materials being Group IIIA-VA materials
- H10P14/2911—Arsenides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
- H10P14/3421—Arsenides
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60173263A JPS61111521A (ja) | 1985-08-08 | 1985-08-08 | 縦型気相成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60173263A JPS61111521A (ja) | 1985-08-08 | 1985-08-08 | 縦型気相成長装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7504979A Division JPS55167041A (en) | 1978-07-31 | 1979-06-14 | Vertical type gaseous phase growth device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61111521A true JPS61111521A (ja) | 1986-05-29 |
| JPS6245690B2 JPS6245690B2 (2) | 1987-09-28 |
Family
ID=15957203
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60173263A Granted JPS61111521A (ja) | 1985-08-08 | 1985-08-08 | 縦型気相成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61111521A (2) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100530477B1 (ko) * | 1997-08-21 | 2006-03-09 | 도시바 기카이 가부시키가이샤 | 고속회전기상박막형성장치및그것을이용한고속회전기상박막형성방법 |
-
1985
- 1985-08-08 JP JP60173263A patent/JPS61111521A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100530477B1 (ko) * | 1997-08-21 | 2006-03-09 | 도시바 기카이 가부시키가이샤 | 고속회전기상박막형성장치및그것을이용한고속회전기상박막형성방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6245690B2 (2) | 1987-09-28 |
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