JPS61111585A - Photovoltaic cell manufacturing method and ink for photovoltaic cell manufacturing - Google Patents
Photovoltaic cell manufacturing method and ink for photovoltaic cell manufacturingInfo
- Publication number
- JPS61111585A JPS61111585A JP59232887A JP23288784A JPS61111585A JP S61111585 A JPS61111585 A JP S61111585A JP 59232887 A JP59232887 A JP 59232887A JP 23288784 A JP23288784 A JP 23288784A JP S61111585 A JPS61111585 A JP S61111585A
- Authority
- JP
- Japan
- Prior art keywords
- mixture
- cadmium
- ink
- photovoltaic cell
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/162—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group II-VI materials, e.g. CdS/CdTe photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Photovoltaic Devices (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔発明の目的〕本発明は太陽電池、光センサなどに利用
される光電池の製造法および光電池製造用のインクに関
するものである。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] The present invention relates to a method for manufacturing photovoltaic cells used in solar cells, optical sensors, etc., and an ink for manufacturing photovoltaic cells.
光電池にはアモルファスシリコンやＩ−Ｖ族の化合物半
導体などを利用するものと、カドミウムを使用するもの
とがある。前者は気相成長法や蒸着法によって製造され
るため真空装置が必要で大量生産に適していない０また
、コストも高く大面積の光電池をうることか困難である
。Photovoltaic cells include those that use amorphous silicon and IV group compound semiconductors, and those that use cadmium. The former method is manufactured by a vapor phase growth method or an evaporation method, which requires a vacuum device and is not suitable for mass production.Furthermore, the cost is high and it is difficult to produce a large-area photovoltaic cell.
これに対し後者はスクリーン印刷を利用することができ
るので大量生産に適しており、コストも安く、かつ大面
積の光電池を容易にうることかできるが、その反面、パ
ターンの精度が低い欠点がある。これは従来のカドミウ
ム光電池が硫化カドミウムと塩化カドミウムとの混合物
、およびテルル化カドミウムと塩化カドミウムとの混合
物に、それぞれプロピレングリコールを混入したインク
を使用していることに基因するものと考えられる。本発
明はこの問題を解決することを意図するものであって、
その目的とするところは高精度のスクリーン印刷が可能
なカドミウム光電池の製造法およびその農造用インクを
提供することにある。On the other hand, the latter method is suitable for mass production because it can use screen printing, is inexpensive, and can easily produce large-area photovoltaic cells, but on the other hand, it has the disadvantage of low pattern accuracy. . This is thought to be due to the fact that conventional cadmium photovoltaic cells use inks containing propylene glycol in a mixture of cadmium sulfide and cadmium chloride, and a mixture of cadmium telluride and cadmium chloride, respectively. The present invention is intended to solve this problem,
The purpose is to provide a method for manufacturing cadmium photovoltaic cells that can be screen printed with high precision, and an agricultural ink for the same.
〔発明の構成〕本発明の光電池の製造法は、硫化カドミ
ウムに塩化カドミウムを添加した混合物に解重合性ポリ
マーの単独又はその混合物の溶液を混入して構成したイ
ンクを基板上に塗布又は印刷して硫化カドミウムを主成
分とする被膜を形成し、これを加熱して前記解重合性ポ
リマーを分解した後、焼結し、その上に、テルル化カド
ミウムに塩化カドミウムを添加した混合物に解重合性ポ
リマーの単独又はその混合物の溶液を混入して構成した
インクを塗布又は印刷してテルル化カドミウムを主成分
とする被膜を形成し、これを加熱して前記解重合性ポリ
マーを分解した後、焼結することを特徴とする。[Structure of the Invention] The method for manufacturing a photovoltaic cell of the present invention involves coating or printing on a substrate an ink composed of a mixture of cadmium sulfide and cadmium chloride mixed with a solution of a depolymerizable polymer alone or a mixture thereof. This is heated to decompose the depolymerizable polymer, and then sintered, and a mixture of cadmium telluride and cadmium chloride is coated with depolymerizable polymer. A film containing cadmium telluride as a main component is formed by applying or printing an ink containing a solution of a single polymer or a mixture thereof, which is heated to decompose the depolymerizable polymer, and then sintered. It is characterized by tying.
また、その製造用のインクは、硫化カドミウムに塩化カ
ドミウムを添加した混合物に解重合性ポリマーの単独又
はその混合物の溶液を混入して構成したインクと、テル
ル化カドミウムに塩化カドミウムを添加した混合物に解
重合性ポリマーの単独又はその混合物の溶液を混入して
構成したインクとよりなることを特徴とする。なお、本
発明において使用される解重合性ポリマーには、ポリ塩
化ビニール、ポリスチレン、ポリメタクリル酸メチル等
が採用される。In addition, the ink for its production is composed of a mixture of cadmium sulfide and cadmium chloride mixed with a solution of a depolymerizable polymer alone or a mixture thereof, and a mixture of cadmium telluride and cadmium chloride. It is characterized by comprising an ink containing a solution of a depolymerizable polymer alone or a mixture thereof. In addition, polyvinyl chloride, polystyrene, polymethyl methacrylate, etc. are employed as the depolymerizable polymer used in the present invention.
〔実施例〕硫化カドミウム（ＣｄＳ ） 、塩化カドミ
ウム（ｃｃｔｃ４ ）、ポリメタクリル酸メチルおよび
ベンジルアルコールをそれぞれ、６０％、６％、８％お
よび８１％（以上重量％）の割合で混合して構成したイ
ンクをスクリーン印刷法によってガラス基板上に印刷し
てＣｄＳを主成分とする被膜を形成し、これを４００ｔ
：で１時間加熱した後、チッ素雰囲気中で、 ６９０Ｃ
で１時間焼成した。[Example] Cadmium sulfide (CdS), cadmium chloride (CCTC4), polymethyl methacrylate, and benzyl alcohol were mixed in proportions of 60%, 6%, 8%, and 81% (by weight), respectively. The ink was printed on a glass substrate using a screen printing method to form a film mainly composed of CdS, and this was coated with 400 tons of
: After heating for 1 hour at 690C in a nitrogen atmosphere.
Baked for 1 hour.
次に焼結したＣｄＳ被膜の上にテルル化カドミウム（Ｃ
ｄＴｅ ）、塩化カドミウム（ＣｄＣｔ、 ）、ポリメ
タクリル酸およびベンジルアルコールをそれぞれ６０％
、０．８％、８％および８６．７％（以上重量％）の割
合で混合して構成したインクをスクリーン印刷法によっ
て印刷してＣｄＴｅ を主成分とする被膜を形成し、こ
れを４０００で１時間加熱した後、チッ素雰囲気中で、
６２０ｔ；で１時間焼結した。焼結したＣｄＴｅ被膜の
上にカーボン電極をつけ、さらにその上に銀電極をつけ
た。また、ＣｄＳ被膜には銀、インジューム電極をつけ
た０
かくしてえた光電池はＣｄ８被膜およびＣｄＴｅ被膜が
共に線間０．ｌ＋ｍ線巾０．１藺の微細なパターとがで
きた。これは本発明がＣｄＳおよびＣｄＴｅにポリメタ
クリル酸メチルを混合したインクでスクリーン印刷をす
ることによるものと考えられる。しかし、このポリマー
はＣｄＳおよびＣｄＴｅの焼結の際に障害となるので除
去しなければならない、そのために本発明の光電池の製
造法においてはＣｄＳインクおよびＣｄＴｅインクの印
刷後、４００Ｃで１時間加熱している。なお、この点を
確認するために、前記実施例のうち、４００Ｃ１１時間
加熱の工程を除外した実験を行なったところ、ＣｄＳお
よびＣｄＴｅは共に焼結しなかった。Next, cadmium telluride (C
dTe ), cadmium chloride (CdCt, ), polymethacrylic acid and benzyl alcohol at 60% each.
, 0.8%, 8%, and 86.7% (by weight) of ink was printed using a screen printing method to form a film mainly composed of CdTe, and this was printed at 4000 p.m. After heating for 1 hour, in a nitrogen atmosphere,
Sintering was carried out at 620 tons for 1 hour. A carbon electrode was attached on top of the sintered CdTe film, and a silver electrode was further attached on top of that. In addition, the CdS film was coated with silver, and the photovoltaic cell thus obtained had a line spacing of 0.0. A fine putter with an l+m line width of 0.1 mm was created. This is thought to be due to the fact that the present invention performs screen printing with an ink containing CdS and CdTe mixed with polymethyl methacrylate. However, this polymer becomes an obstacle during the sintering of CdS and CdTe and must be removed. Therefore, in the photovoltaic cell manufacturing method of the present invention, after printing the CdS ink and CdTe ink, heating is performed at 400C for 1 hour. ing. In order to confirm this point, an experiment was conducted in which the 400C 11-hour heating step of the above-mentioned example was excluded, and both CdS and CdTe were not sintered.
〔発明の効果〕本発明の製造法による光電池と従来法に
よる光電池とを比較するために、テ印刷したところ、印
刷されたＣｄＳ膜はスクリーン版の線間ｌ ｗｇ 、線
巾１ｍ以下の印刷パターンを精密に再現することができ
なかった。また、印刷されたＣｄＳ膜のレベルも不均一
で良質の光電池がえられなかった。これに対し本発明の
光電池の製造法は前記実施例が示すように、線間０．１
１０＋、線巾Ｑ、１ｍの微細なパターンの形成が可能で
あシ、かつ亀裂のない均一なレベルを有するＣｄＳ膜お
よびＣｄＴｅ膜をうることができるすぐれた効果を有す
る。[Effects of the Invention] In order to compare the photovoltaic cell manufactured by the manufacturing method of the present invention and the photovoltaic cell manufactured by the conventional method, the printed CdS film was printed with a line spacing l wg of the screen plate and a printed pattern with a line width of 1 m or less. could not be precisely reproduced. In addition, the level of the printed CdS film was also uneven, making it impossible to obtain a high-quality photovoltaic cell. On the other hand, in the method for manufacturing a photovoltaic cell of the present invention, as shown in the above embodiment, the line spacing is 0.1
10+, line width Q, 1 m fine pattern can be formed, and it has an excellent effect that CdS films and CdTe films having a uniform level without cracks can be obtained.
Claims (2)
物に解重合性ポリマーの単独又はその混合物の溶液を混
入して構成したインクを基板上に塗布又は印刷して硫化
カドミウムを主成分とする被膜を形成し、これを加熱し
て前記解重合性ポリマーを分解した後、焼結し、その上
に、テルル化カドミウムに塩化カドミウムを添加した混
合物に解重合性ポリマーの単独又はその混合物の溶液を
混入して構成したインクを塗布又は印刷してテルル化カ
ドミウムを主成分とする被膜を形成し、これを加熱して
前記解重合性ポリマーを分解した後、焼結することを特
徴とする光電池の製造法(1) Form a film containing cadmium sulfide as the main component by coating or printing on a substrate an ink composed of a mixture of cadmium sulfide and cadmium chloride mixed with a solution of a depolymerizable polymer alone or a mixture thereof. After heating this to decompose the depolymerizable polymer, it is sintered, and then a solution of a depolymerizable polymer alone or a mixture thereof is mixed into a mixture of cadmium telluride and cadmium chloride. A method for producing a photovoltaic cell, comprising: coating or printing an ink composed of cadmium telluride as a main component, heating the film to decompose the depolymerizable polymer, and then sintering the film.
物に解重合性ポリマーの単独又はその混合物の溶液を混
入して構成したインクと、テルル化カドミウムに塩化カ
ドミウムを添加した混合物に解重合性ポリマーの単独又
はその混合物の溶液を混入して構成したインクとよりな
ることを特徴とする光電池製造用インク(2) An ink composed of a mixture of cadmium sulfide and cadmium chloride mixed with a solution of a depolymerizable polymer alone or a mixture thereof, and a mixture of cadmium telluride and cadmium chloride mixed with a solution of a depolymerizable polymer alone. An ink for producing photovoltaic cells, characterized in that it is composed of an ink containing a solution of a mixture thereof or a solution thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59232887A JPS61111585A (en) | 1984-11-05 | 1984-11-05 | Photovoltaic cell manufacturing method and ink for photovoltaic cell manufacturing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59232887A JPS61111585A (en) | 1984-11-05 | 1984-11-05 | Photovoltaic cell manufacturing method and ink for photovoltaic cell manufacturing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61111585A true JPS61111585A (en) | 1986-05-29 |
| JPH0519836B2 JPH0519836B2 (en) | 1993-03-17 |
Family
ID=16946394
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59232887A Granted JPS61111585A (en) | 1984-11-05 | 1984-11-05 | Photovoltaic cell manufacturing method and ink for photovoltaic cell manufacturing |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61111585A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4369423A4 (en) * | 2021-11-23 | 2025-04-02 | China Triumph International Engineering Co., Ltd. | Method for activating absorption layer of thin-film solar cell |
-
1984
- 1984-11-05 JP JP59232887A patent/JPS61111585A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4369423A4 (en) * | 2021-11-23 | 2025-04-02 | China Triumph International Engineering Co., Ltd. | Method for activating absorption layer of thin-film solar cell |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0519836B2 (en) | 1993-03-17 |
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