JPS61128404A - Dielectric ceramic composition - Google Patents
Dielectric ceramic compositionInfo
- Publication number
- JPS61128404A JPS61128404A JP59250795A JP25079584A JPS61128404A JP S61128404 A JPS61128404 A JP S61128404A JP 59250795 A JP59250795 A JP 59250795A JP 25079584 A JP25079584 A JP 25079584A JP S61128404 A JPS61128404 A JP S61128404A
- Authority
- JP
- Japan
- Prior art keywords
- ceramic composition
- dielectric ceramic
- dielectric
- composition
- less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 title claims description 17
- 239000000919 ceramic Substances 0.000 title claims description 9
- 239000003985 ceramic capacitor Substances 0.000 description 9
- 229910052573 porcelain Inorganic materials 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 238000005245 sintering Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 3
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- 229910001252 Pd alloy Inorganic materials 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 241001474791 Proboscis Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000855 fermentation Methods 0.000 description 1
- 230000004151 fermentation Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000011268 mixed slurry Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000010517 secondary reaction Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
（産業上の利用分Ｒ）
この発明は、酵４．率が８０００以上と高く、かつその
焼結温度が９５０〜１０００’（：と丘いことを特徴と
する誘電体磁器組成物に関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application R) This invention is based on fermentation 4. The present invention relates to a dielectric ceramic composition characterized by a high ratio of 8000 or more and a sintering temperature of 950 to 1000'.
（従来の技術）
積層セラミックコンデンサは小製で犬Ｇｌであること、
高周波特性にすぐれＣいること、討熱性にすぐれ、かつ
量産性に富むなど、のｆＰｉｔを有している。したがつ
“Ｃ１産業用心子機器、民生用電子機器の軽薄短小、高
品質、高周波設計などの要求に合致することから近年そ
の需要は増加の一途をたどっている。(Conventional technology) Multilayer ceramic capacitors are small and GL.
It has fPit such as excellent high frequency characteristics, excellent heat dissipation, and ease of mass production. However, the demand for "C1" has been steadily increasing in recent years as it meets the demands of industrial core devices and consumer electronic devices such as lightness, thinness, compactness, high quality, and high frequency design.
従来の積層セラミックコンデンサは、内部ｔｉとしＣＡ
ｕ、 Ｐｔ、 Ｉ’＋１など、高価な貴金属を用いるの
が一般的であった。Conventional multilayer ceramic capacitors have internal Ti and CA
It was common to use expensive noble metals such as u, Pt, and I'+1.
（発明が解決しようとする問題）
しかしながら、上記した貴金属を内部シ１とする積層セ
ラミックコンデンサでは、生産コストの過半が、を極材
料費となシ、全体のコストを低減することに限度があっ
た。(Problem to be Solved by the Invention) However, in the multilayer ceramic capacitor whose internal shell is made of the above-described noble metal, the majority of the production cost is the material cost, and there is a limit to reducing the overall cost. Ta.
このため、チタン酸バリウムを主体とする高訪電率系の
磁器組成物に、ホウ素、ビスマス、鉛などの酸化物よシ
なるガラス成分を添加し、焼成温度を従前の１５００〜
１３５０ｔ’から１１００〜１１５０ｔ：−下させ、比
較的安両な銀−パラジウム系合金を内部電、画とする、
低温焼結可能な積層セラミックコンデンサが開発される
に至った。For this reason, we added glass components such as oxides such as boron, bismuth, and lead to a high-viscosity porcelain composition that is mainly made of barium titanate, and the firing temperature was increased from 1,500 to 1,500 yen.
1350t' to 1100~1150t: - lowered and relatively safe silver-palladium alloy used as internal electrode,
A multilayer ceramic capacitor that can be sintered at low temperatures has been developed.
しかし、ガラス成分を添加することによシ、本来チタン
酸バリクム母体組成が有する誘電率を低減させ、積層セ
ラミックコンデンサの寸法とし”では逆に大きくなシ、
電極材料のコストの低下を打ち消しＣしまりという欠点
が見られた。However, by adding a glass component, the dielectric constant of the baricum titanate matrix composition is reduced, and the size of the multilayer ceramic capacitor becomes large.
The drawback of C tightness was observed, which offset the decrease in the cost of the electrode material.
（宅間の目的）
したがつＣ１この発明は、上記した従来技術のように誘
電率の低下をもたらすことなく、つまシ誘α卓の値が８
０００以上を示し、かつその焼結温度が９５０〜１ｏｏ
ｏｃと低す誘電体磁器組成物を提供することを目的とす
る。(Purpose of the home) C1 This invention is capable of increasing the value of the dielectric constant α to 8 without causing a decrease in the dielectric constant unlike the above-mentioned prior art.
000 or more, and the sintering temperature is 950 to 1oo
The purpose of the present invention is to provide a dielectric ceramic composition with low oc.
また、この発明は、焼結温度が低いことを利用し゛Ｃ１
比佼的安価な銀−パラジウム系合金を内部を極とする積
層・４セラミツクコンデンサを構成する誘電体材料とし
゛Ｃ利用可能な誘電体磁器組成物を提供することを目的
とする。In addition, this invention utilizes the low sintering temperature to
The object of the present invention is to provide a dielectric ceramic composition that can be used as a dielectric material constituting a laminated four-layer ceramic capacitor having a relatively inexpensive silver-palladium alloy as an internal pole.
（発明の構成）
この発明にかかる訪１体磁器組成吻は、Ｐｉ）（Ｆ’θ
４ＭｂＶ）Ｏ，、Ｐｂ（Ｆｅ％Ｔ ａ％） ０”を主成
分とするものである。(Structure of the Invention) The porcelain composition proboscis according to the present invention is Pi)(F'θ
The main component is 4MbV)O,,Pb(Fe%Ta%)0''.
また、この発明にかかる誘電体磁器組成物は、上記した
主成分に対し、副成分とし゛〔マンガンを添加含有した
ものである。Further, the dielectric ceramic composition according to the present invention contains manganese as a subcomponent in addition to the above-mentioned main component.
上記した主成分は次のような組成範囲からなるものであ
る。The main components mentioned above have the following composition range.
つまシ、Ｐｂ（ＩＦｅ％Ｎｂ％）Ｏ，、Ｐｂ（Ｐｅ％Ｔ
ａ％）ｏ、を一般式
％式％）
で表わしたとき、” ＝’１３０−α７ｏの範囲にある
。Tsumashi, Pb(IFe%Nb%)O,, Pb(Pe%T
When a%)o is expressed by the general formula %), it is in the range of ``='130-α7o.
また、主成分に対する副成分の添〃０き有範囲はａｔ）
Ｏ：５Ｔａ以下テロ ル。In addition, the addition range of subcomponents to the main component is at)
O: Terror of less than 5 Ta.
（組成範囲の限定理由）
主成分の組成範囲を上記したように限定したのは、Ｘが
α３０未満では焼成温度が１０００ｔ： を越え、誘を
率が８０００未イ１４となシ、誘電正接もＺＯＳ以上と
大きくなシ、さらに比抵抗も１０ｔ１Ω、１未満となる
からである。一方、Ｘが０．７０を越えると誘電率が８
０００未満となシ、誘電正接が２．０％以上と大きくな
るからである。(Reason for limiting the composition range) The reason for limiting the composition range of the main components as described above is that when This is because the resistivity is larger than ZOS, and the resistivity is also 10t1Ω, which is less than 1. On the other hand, when X exceeds 0.70, the dielectric constant is 8
This is because if it is less than 0.000, the dielectric loss tangent will be as large as 2.0% or more.
また、主成分に対し゛Ｃ副成分であるマンガンをＭｎＯ
，に換算しｃ Ｑ、 （３ＣＦ５ｘ ＋ｙ以下としたの
は１００９モ）しを越えると誘電率が８０００未満とな
シ、比抵抗が１０ ” ｒＬ、（３未満となるからであ
る。In addition, manganese, which is a subcomponent of ゛C, is added to the main component as MnO.
, which is converted to c Q, (3CF5x +y or less is 1009).If it exceeds 2, the dielectric constant becomes less than 8000, and the specific resistance becomes less than 10''rL, (3CF5x +y).
（効果）
この発明にかかる誘電体磁器組成物は、次のような効果
を有する。(Effects) The dielectric ceramic composition according to the present invention has the following effects.
■ 誘電率（ε）が８０００以上の値を示す。■ The dielectric constant (ε) shows a value of 8000 or more.
■ 誘′４正接（ｔａｎδ）が２．０％以下である。■ The dielectric tangent (tan δ) is 2.0% or less.
■ 室温での比抵抗が１０″ｆｌ−ｃｓａ以上である。(2) Specific resistance at room temperature is 10″fl-csa or more.
■ 焼店温度が９５０〜１ｏｏｏｒ：と低い。■ The temperature of the grill is as low as 950-1000.
■ マンガンを含有させることＶζよシ、比抵抗が改善
される。■ Adding manganese improves resistivity compared to Vζ.
したがつＣ１この発明にかかる誘電体磁器組成物は一役
の磁器コンデンサのみならず、積層セラミックコンデン
サの誘電材料とし゛Ｃ使用可能なものである。特に積層
セラミックコンデンサヲ製造する場合、焼結温度が低い
ことに起因し゛Ｃ１内部鑞極とし°Ｃ銀−パラジウム系
材料を用いることができ、小屋、大ｇｍのもの忘工業的
に生産することができる。Therefore, the dielectric ceramic composition according to the present invention can be used not only as a ceramic capacitor but also as a dielectric material for multilayer ceramic capacitors. In particular, when manufacturing multilayer ceramic capacitors, due to the low sintering temperature, C1 internal solder electrodes can be made of silver-palladium materials, making it difficult to industrially produce large-gm monolithic capacitors. can.
（実施例） 以下、この発明を実施例に従つ゛Ｃ詳１細に説明する。(Example) Hereinafter, this invention will be explained in detail according to embodiments.
’に’ｂｓ Ｏａ 、 Ｆｓ、 Ｏｘ ＊ Ｎｂｌ Ｏ
ｓ ＊ Ｔａｇ Ｏｓｊ？よびＭａｃ。'to'bs Oa, Fs, Ox * Nbl O
s * Tag Osj? and Mac.
を出発原料とし、第１表に示す組成比の磁器組成物が最
終的に得られるように各原料を秤量した。were used as starting materials, and each raw material was weighed so as to finally obtain a porcelain composition having the composition ratio shown in Table 1.
６秤ｉ″ｉ、ｐｒを１００ｇとし、ポリエチレン製ポッ
トにメノウ玉石とともに入れ、５〜２０４間湿式混合し
た。混合物スラリーを脱水、乾燥し、アルミナ貞の匣に
入れ、６５０〜８００ｃで２時間保持しＣ仮焼し、−次
反応粉末（仮焼粉末）を得た。仮焼粉末をあらかじめ粗
粉砕し、バインダーとし°Ｃポリビニルアルコールを５
重量％加えＣ再び湿式混合粉砕を行った。得られたスラ
リーを乾燥したのち、５０メツシユの副を通しＣ成形用
整粒粉末とした。次いで、オイルプレスで２０００Ｋｙ
／ｄの圧力で直径１２ａｔ、厚み１．０ＪＥ１１の円板
状に成形加工した。成彩円板をジルコニア質の匣に入れ
、適度の鉛雰囲気に設定した１気炉内で、９００〜１０
３０℃の温度で２時間焼成した。6 scale i"i, pr was 100 g, placed in a polyethylene pot with agate cobbles, and mixed wet for 5 to 204 minutes. The mixed slurry was dehydrated and dried, placed in an alumina box, and held at 650 to 800 c for 2 hours. The calcined powder was then calcined to obtain a secondary reaction powder (calcined powder).The calcined powder was coarsely ground in advance, and polyvinyl alcohol was added as a binder at 5°C.
Wet mixing and pulverization was carried out again by adding % C by weight. After drying the obtained slurry, it was passed through a 50-mesh vice to obtain a sized powder for C molding. Next, use an oil press for 2000Ky.
It was molded into a disk shape with a diameter of 12at and a thickness of 1.0JE11 at a pressure of /d. Place the colored disk in a zirconia box and heat it in a one-air furnace set to a moderate lead atmosphere.
It was baked at a temperature of 30° C. for 2 hours.
得られた磁器円板の両面に、ｔｊＭ硅酸鉛ガラスフリッ
トを含む銀ペーストを塗布し、７５０Ｃで１０分間焼き
付け・〔這、甑を形成し、測定用の試料とした。A silver paste containing tjM lead silicate glass frit was applied to both sides of the obtained porcelain disk, and baked at 750C for 10 minutes to form a porcelain plate, which was used as a sample for measurement.
各試料につき、静電容ｆ（Ｃ入誘電正接（ｔａｎδ）を
ＹＨＰ製ＬＣＲメータ４２７４を用い゛Ｃ！度２５℃、
１ＫＨｚ、 １Ｖｒｍａの条件丁で測定した。 また絶
縁抵抗（工Ｒ）はタケダ理研調メグオームメータＴＲ８
６０１を用い、温度２５′ｃで、直流５００ｖ印／ＪＯ
２分後の値を測定した。゛試料の厚み、シ極の直径寸法
を測定し、誘電率（ε）および比抵抗１ｐ）を計算し、
その結果を第１表に示した。For each sample, the capacitance f (C input dielectric loss tangent (tan δ)) was measured at 25°C using YHP LCR meter 4274.
Measurement was performed under the conditions of 1 KHz and 1 Vrma. Insulation resistance (R) is measured using Takeda Riken Megohmmeter TR8.
601, at 25'C, DC 500V mark/JO
The value was measured after 2 minutes.゛Measure the thickness of the sample and the diameter of the shield pole, calculate the dielectric constant (ε) and specific resistance 1p),
The results are shown in Table 1.
さらに、各試料の焼成温度を第１表に示した。Furthermore, the firing temperature of each sample is shown in Table 1.
なお、第１表中金印を付したものは、この発明範囲外の
ものであり、それ以外のものはこの発明範囲内のもので
ある。In Table 1, those marked with a gold mark are outside the scope of this invention, and the others are within the scope of this invention.
Claims (2)
３、Ｐｂ（Ｆｅ＿１＿／＿２Ｔａ＿１＿／＿２）Ｏ＿３
からなり、これを一般式 ｘＰｂ（Ｆｅ＿１＿／＿２Ｎｂ＿１＿／＿２）Ｏ＿３−
＿（＿１＿−＿ｘ＿）Ｐｂ（Ｆｅ＿１＿／＿２Ｔａ＿１
＿／＿２）Ｏ＿３と表わしたとき、 ｘ＝０．３０〜０．７０ からなることを特徴とする誘電体磁器組成物。(1) Pb(Fe_1_/_2Nb_1_/_2)O_
3, Pb(Fe_1_/_2Ta_1_/_2)O_3
This is expressed as the general formula xPb(Fe_1_/_2Nb_1_/_2)O_3-
_(_1_-_x_)Pb(Fe_1_/_2Ta_1
_/_2) A dielectric ceramic composition characterized in that, when expressed as O_3, x=0.30 to 0.70.
Ｏ＿３、Ｐｂ（Ｆｅ＿１＿／＿２Ｔａ＿１＿／＿２）Ｏ
＿３からなる生成分に対し、副成分としてマンガンをＭ
ｎＯ＿２に換算して０．００５モル％以下含有すること
を特徴とする特許請求の範囲第（１）項記載の誘電体磁
器組成物。(2) Said Pb (Fe_1_/_2Nb_1_/_2)
O_3, Pb(Fe_1_/_2Ta_1_/_2)O
M
The dielectric ceramic composition according to claim (1), which contains 0.005 mol% or less in terms of nO_2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59250795A JPS61128404A (en) | 1984-11-27 | 1984-11-27 | Dielectric ceramic composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59250795A JPS61128404A (en) | 1984-11-27 | 1984-11-27 | Dielectric ceramic composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61128404A true JPS61128404A (en) | 1986-06-16 |
Family
ID=17213158
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59250795A Pending JPS61128404A (en) | 1984-11-27 | 1984-11-27 | Dielectric ceramic composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61128404A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05132352A (en) * | 1991-11-11 | 1993-05-28 | Matsushita Electric Ind Co Ltd | Dielectric porcelain composition |
-
1984
- 1984-11-27 JP JP59250795A patent/JPS61128404A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05132352A (en) * | 1991-11-11 | 1993-05-28 | Matsushita Electric Ind Co Ltd | Dielectric porcelain composition |
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