JPS6113382B2 - - Google Patents

Info

Publication number
JPS6113382B2
JPS6113382B2 JP55003288A JP328880A JPS6113382B2 JP S6113382 B2 JPS6113382 B2 JP S6113382B2 JP 55003288 A JP55003288 A JP 55003288A JP 328880 A JP328880 A JP 328880A JP S6113382 B2 JPS6113382 B2 JP S6113382B2
Authority
JP
Japan
Prior art keywords
layer
resin
ladder
adhesion
titanol
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55003288A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56100447A (en
Inventor
Shiro Takeda
Minoru Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP328880A priority Critical patent/JPS56100447A/ja
Priority to US06/161,561 priority patent/US4349609A/en
Priority to DE8080302103T priority patent/DE3065150D1/de
Priority to EP80302103A priority patent/EP0021818B1/en
Publication of JPS56100447A publication Critical patent/JPS56100447A/ja
Publication of JPS6113382B2 publication Critical patent/JPS6113382B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/662—Laminate layers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69394—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing titanium, e.g. TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/097—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by thermally treating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
JP328880A 1979-06-21 1980-01-16 Lamination structure body Granted JPS56100447A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP328880A JPS56100447A (en) 1980-01-16 1980-01-16 Lamination structure body
US06/161,561 US4349609A (en) 1979-06-21 1980-06-20 Electronic device having multilayer wiring structure
DE8080302103T DE3065150D1 (en) 1979-06-21 1980-06-23 Improved electronic device having multilayer wiring structure
EP80302103A EP0021818B1 (en) 1979-06-21 1980-06-23 Improved electronic device having multilayer wiring structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP328880A JPS56100447A (en) 1980-01-16 1980-01-16 Lamination structure body

Publications (2)

Publication Number Publication Date
JPS56100447A JPS56100447A (en) 1981-08-12
JPS6113382B2 true JPS6113382B2 (2) 1986-04-12

Family

ID=11553205

Family Applications (1)

Application Number Title Priority Date Filing Date
JP328880A Granted JPS56100447A (en) 1979-06-21 1980-01-16 Lamination structure body

Country Status (1)

Country Link
JP (1) JPS56100447A (2)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60139764A (ja) * 1983-12-27 1985-07-24 Fujitsu Ltd シリコン系熱硬化性樹脂のキユア−方法
JPH0734436B2 (ja) * 1986-07-16 1995-04-12 三菱電機株式会社 半導体装置の製造方法および製造装置
JPS6445148A (en) * 1987-08-13 1989-02-17 Fuji Xerox Co Ltd Semiconductor device and manufacture thereof

Also Published As

Publication number Publication date
JPS56100447A (en) 1981-08-12

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