JPS61137373A - 半導体放射線検出器の製造方法 - Google Patents

半導体放射線検出器の製造方法

Info

Publication number
JPS61137373A
JPS61137373A JP59260157A JP26015784A JPS61137373A JP S61137373 A JPS61137373 A JP S61137373A JP 59260157 A JP59260157 A JP 59260157A JP 26015784 A JP26015784 A JP 26015784A JP S61137373 A JPS61137373 A JP S61137373A
Authority
JP
Japan
Prior art keywords
layer
substrate
single crystal
electrode
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59260157A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0543196B2 (fr
Inventor
Yasukazu Seki
康和 関
Noritada Sato
則忠 佐藤
Masaya Yabe
正也 矢部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP59260157A priority Critical patent/JPS61137373A/ja
Publication of JPS61137373A publication Critical patent/JPS61137373A/ja
Publication of JPH0543196B2 publication Critical patent/JPH0543196B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H10F30/295—Surface barrier or shallow PN junction radiation detectors, e.g. surface barrier alpha-particle detectors

Landscapes

  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
JP59260157A 1984-12-10 1984-12-10 半導体放射線検出器の製造方法 Granted JPS61137373A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59260157A JPS61137373A (ja) 1984-12-10 1984-12-10 半導体放射線検出器の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59260157A JPS61137373A (ja) 1984-12-10 1984-12-10 半導体放射線検出器の製造方法

Publications (2)

Publication Number Publication Date
JPS61137373A true JPS61137373A (ja) 1986-06-25
JPH0543196B2 JPH0543196B2 (fr) 1993-06-30

Family

ID=17344105

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59260157A Granted JPS61137373A (ja) 1984-12-10 1984-12-10 半導体放射線検出器の製造方法

Country Status (1)

Country Link
JP (1) JPS61137373A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100435295B1 (ko) * 2001-04-12 2004-06-10 가부시키가이샤 시마쓰세사쿠쇼 방사선 검출장치

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100435295B1 (ko) * 2001-04-12 2004-06-10 가부시키가이샤 시마쓰세사쿠쇼 방사선 검출장치

Also Published As

Publication number Publication date
JPH0543196B2 (fr) 1993-06-30

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