JPS6116151B2 - - Google Patents
Info
- Publication number
- JPS6116151B2 JPS6116151B2 JP55178295A JP17829580A JPS6116151B2 JP S6116151 B2 JPS6116151 B2 JP S6116151B2 JP 55178295 A JP55178295 A JP 55178295A JP 17829580 A JP17829580 A JP 17829580A JP S6116151 B2 JPS6116151 B2 JP S6116151B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- disk
- hole
- positioning
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005468 ion implantation Methods 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 claims 11
- 150000002500 ions Chemical class 0.000 description 9
- 230000007246 mechanism Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000003780 insertion Methods 0.000 description 4
- 230000037431 insertion Effects 0.000 description 4
- 238000007664 blowing Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
Description
【発明の詳細な説明】
本発明はイオン注入装置におけるウエハー搬送
装置に係わるものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a wafer transfer device in an ion implantation apparatus.
周知のようにシリコンその他の基体にイオンを
注入して半導体を作ることはすでに広く実施され
ている。 As is well known, manufacturing semiconductors by implanting ions into silicon or other substrates is already widely practiced.
通常このような場合、金属製のデイスク上の周
辺部分に等間隔に設けられた保持用の孔に基体と
なるウエハーを装着し、このデイスクを荷電粒子
加速によるイオン注入装置のイオン照射下に置い
て、前記デイスクの回転および並進により、各ウ
エハーがそれぞれ照射を受けるような形態を採つ
てイオンの注入がなされる。 Normally, in such cases, the base wafer is mounted in holding holes provided at equal intervals around the periphery of a metal disk, and the disk is placed under ion irradiation by an ion implanter using charged particle acceleration. By rotating and translating the disk, ions are implanted in such a manner that each wafer is individually irradiated.
通常、このような場合に用いられるデイスク１
は第１図に示すように、例えばアルミニウムより
なる金属円板１の回転軸０より同心状に２列の等
間隔に位置する複数の保持用の穴２，２′を有
し、この穴２，２′は第２図のデイスクの穴２を
通る断面にみられる通り、デイスク１の上面側は
ウエハー３の径よりも若干大きな径を有する穴径
r1をとり、穴２の中間の段部４で孔径r2とウエハ
ー３の径よりも小さくとられて下側に連通し、且
つ、前記段部４はウエハー３をこの部分において
保持したとき、回転軸０を通る水平面に対し、回
転軸０の方向に数度程度をもつて保持されるよう
に、中心軸方向に下りの傾斜を有する段部として
形成され、穴２の下方向よりイオン照射の際、ウ
エハー３中をイオン流が通り抜けないよう配慮さ
れている。 Usually, disk 1 used in such cases
As shown in FIG. 1, it has a plurality of holding holes 2, 2' located concentrically from the rotation axis 0 of a metal disc 1 made of aluminum, for example, in two rows at equal intervals. , 2' is a hole diameter slightly larger than the diameter of the wafer 3 on the upper surface side of the disk 1, as seen in the cross section passing through the hole 2 of the disk in FIG.
r 1 , and the step 4 in the middle of the hole 2 is smaller than the hole diameter r 2 and the diameter of the wafer 3 and communicates with the lower side, and when the step 4 holds the wafer 3 in this part. , is formed as a stepped portion having a downward slope in the direction of the central axis so that it is held at an angle of several degrees in the direction of the rotation axis 0 with respect to the horizontal plane passing through the rotation axis 0, and the ion is drawn from the bottom of the hole 2. Care is taken to prevent the ion flow from passing through the wafer 3 during irradiation.
通常、イオン注入装置において、荷電粒子加速
によるイオン銃はデイスク１の斜下方に置かれ、
前記デイスク１上の周辺に設けられた各穴２，
２′にイオン注入加工をするウエハー３をそれぞ
れ挿入して、前述のように回転軸０を回転させ、
且つ回転軸０を平行移動させながら、デイスク１
に挿入、保持されたウエハー３をデイスク１の下
側に開く孔２よりイオン照射する。 Usually, in an ion implanter, an ion gun that accelerates charged particles is placed diagonally below the disk 1.
each hole 2 provided on the periphery of the disk 1;
Insert each wafer 3 to be ion-implanted into 2', rotate the rotation axis 0 as described above,
While moving the rotation axis 0 in parallel, the disk 1
The wafer 3 inserted and held in the disk 1 is irradiated with ions through the hole 2 opened at the bottom of the disk 1.
デイスク１は毎分数百回転するが、回転中穴２
に挿入されたウエハー３が前記のイオン注入中に
穴２において回転するようなことを生じるとすれ
ば、イオン注入は一様とはならないこともあり、
ウエハー３を挿入する穴２の大きな径r1を有する
部分はウエハー３の径よりわずかに大きな径とさ
れ、イオン注入作業中、ウエハー３の移動をでき
る限り避けるようにしている。 Disk 1 rotates several hundred times per minute, but the rotating hole 2
If the wafer 3 inserted into the hole 2 rotates in the hole 2 during the ion implantation, the ion implantation may not be uniform.
The large diameter r 1 of the hole 2 into which the wafer 3 is inserted is made slightly larger than the diameter of the wafer 3 to avoid movement of the wafer 3 as much as possible during the ion implantation operation.
ところが、穴２の径にウエハー３の径が接近し
てくると、これを自動機械により挿入することは
困難となつてくるが、従来デイスク１の周辺に一
列のウエハー挿入の穴２を有するものにおいて
は、デイスク１の位置割出しのため第３図に示す
ようにデイスク１上の周縁に、穴２と対応して、
例えば係止部５を設け、デイスク１を逐次回動さ
せ、空になつている穴２が廻つてくるごとに、点
線で示すウエハー搬送溝体６側に設けられた割出
片７を前記係止部５に係合させ、そのあとウエハ
ー３を送り出して穴２に挿入するような方式を採
つている。この場合、ウエハー搬送溝体６の先端
定位置において、ウエハー３が穴２に落ち込むよ
うに形成することは容易であるが、デイスク１に
設けられる穴２が同心状に二列となつたときは、
第４図に示すように外側に位置する穴２と内側に
位置する穴２′とに対して、搬送溝体６側より
l1，l2の２つの位置ぎめをするような機構が必要
となる。このような場合、ウエハー搬入溝体６自
体を前記のような二段階のl1，l2を位置制御する
ような複雑あるいは大型化する機構とすることは
他の附属機構の存在をも考慮して、でき得る限り
避けるべきである。 However, as the diameter of the wafer 3 approaches the diameter of the hole 2, it becomes difficult to insert it using an automatic machine. In order to index the position of the disk 1, holes 2 are formed on the periphery of the disk 1, as shown in FIG.
For example, a locking portion 5 is provided, and when the disk 1 is sequentially rotated and the empty hole 2 is rotated, the index piece 7 provided on the side of the wafer conveyance groove 6 shown by the dotted line is moved into the locking position. A method is adopted in which the wafer 3 is engaged with the stopper 5, and then the wafer 3 is sent out and inserted into the hole 2. In this case, it is easy to form the wafer 3 so that it falls into the hole 2 at the fixed position at the tip of the wafer conveying groove 6, but when the holes 2 provided in the disk 1 are arranged in two concentric rows, ,
As shown in FIG. 4, the hole 2 located on the outside and the hole 2' located on the inside are
A mechanism for positioning the two positions l 1 and l 2 is required. In such a case, making the wafer loading groove body 6 itself a complicated or large-sized mechanism that controls the position of the two stages l 1 and l 2 as described above also takes into consideration the existence of other attached mechanisms. should be avoided as much as possible.
これに対して、本発明においては、ウエハー３
をデイスク１の穴２，２′に着脱する際、ウエハ
ー搬送装置自体を前後に移動させる必要はある
が、ウエハー搬送溝体６自体には前述のような２
つのl1，l2といつた位置ぎめ機構を設けることな
く、すでに説明したデイスク１周縁の係止部分５
とウエハー搬送装置側の割出片７によるデイスク
１の回転方向の位置ぎめに加え、デイスク１の穴
２および２′に対応してデイスク１上に設けれた
位置ぎめ用係止穴とウエハー搬送溝体６自体に設
けた簡単な割出しピンによつて、デイスク１の半
径方向の位置ぎめを行うことができるように構成
したものである。 On the other hand, in the present invention, the wafer 3
Although it is necessary to move the wafer transfer device back and forth when attaching and removing the wafer to the holes 2 and 2' of the disk 1, the wafer transfer groove 6 itself has the
Without providing the positioning mechanism such as l 1 and l 2 , the locking portion 5 on the periphery of the disk 1 described above can be used.
In addition to the positioning of the disk 1 in the rotational direction by the indexing piece 7 on the wafer transfer device side, the wafer transfer is performed by positioning locking holes provided on the disk 1 corresponding to the holes 2 and 2' of the disk 1. The structure is such that the disk 1 can be positioned in the radial direction by a simple index pin provided on the groove body 6 itself.
以下図面に示す本発明の実施例について説明す
る。第５図は本発明の一実施例を概略的に示し、
Ａ図はウエハー３の芯出し部分を説明する図面で
あり、Ｂ図は本実施例の上面図であり、Ｃ図は同
側面図である。デイスク１上の外側に位置する穴
２に対して、デイスク１の周縁にデイスク位置割
出し用の係止部５を設け、内側の穴２′に対して
も同様に周縁部に係止部５′を設ける。Ｂ図にお
いては斜線で示す外側の１つの穴２が丁度ウエハ
ー３の挿入位置にあることを示している。また、
各穴２，２′には回転軸０の方向において、各穴
２，２′に近接して後述の係止穴８が設けられ
る。 Embodiments of the present invention shown in the drawings will be described below. FIG. 5 schematically shows an embodiment of the invention,
Figure A is a drawing for explaining the centering portion of the wafer 3, Figure B is a top view of this embodiment, and Figure C is a side view of the same. For the hole 2 located on the outside of the disk 1, a locking portion 5 for indexing the disk position is provided on the periphery of the disk 1, and a locking portion 5 is similarly provided on the periphery for the hole 2' on the inside. ′ is provided. Figure B shows that one hole 2 on the outside indicated by diagonal lines is exactly at the insertion position of the wafer 3. Also,
A locking hole 8, which will be described later, is provided in each hole 2, 2' adjacent to each hole 2, 2' in the direction of the rotation axis 0.
デイスク回転軸０は、操作により回転して、先
端が回転軸０の方向に支持されたウエハー搬送溝
体６のほぼ下にくるように制御される。今デイス
ク１が回転して、斜線で示す穴２がウエハー搬送
溝体６のほぼ下にきたとき、別途支持された割出
片７が、ウエハー搬送溝体６の下にある穴２に対
応する係止部５に係合され、精確にデイスク１の
回転角に対する割出しがなされる。この割出しと
ともに、Ｃ図に示すようにウエハー搬送溝体６の
先端より下方に突出する割出しピン１０を例え
ば、９で示すようなソレノイド機構を附勢して、
下方に突出させれば、割出しピン１０は係止穴８
に係合して、長さ方向に位置ぎめが精確になさ
れ、この状態で、例えば真空チヤツク１１によつ
て固着したウエハー３を例えばウエハー３のカー
トリツジ（図示してない）より運び、斜線で示さ
れた穴２に挿通する。Ａ図はウエハー３をカート
リツジより受取り、芯出しして真空チヤツクに固
着させる芯出部分を示している。ウエハー３は矢
印がある方向よりプツシヤー２３によつて左方に
運ばれてくる。支持枠２０のウエハー３と接する
面にはそれぞれ複数の空気吹出孔２２が設けられ
ており、プツシヤー２３によりカートリツジより
押し出されたウエハー３は支持枠２０上を前記空
気吹出孔２２よりの空気により支持枠２０との摩
擦をできるだけ軽減しながら送られ、芯出用枠２
１に形成された芯出型２４に保持される。芯出型
２４への接触をセンサーで感知し、この状態で支
持枠２０が若干下にさがり、下側に位置する真空
チヤツク１１がこれを吸着し、吸着が終れば、ウ
エハー３を吸着した真空チヤツク１１は両芯出用
枠２１の間の開溝２５を通つて挿入位置に移動す
る。 The disk rotation axis 0 is rotated by operation and controlled so that the leading end is substantially below the wafer transport groove 6 supported in the direction of the rotation axis 0. When the disk 1 rotates and the hatched hole 2 comes almost below the wafer conveyance groove 6, the separately supported index piece 7 corresponds to the hole 2 below the wafer conveyance groove 6. It is engaged with the locking portion 5, and the rotation angle of the disk 1 can be accurately indexed. Along with this indexing, the indexing pin 10 protruding downward from the tip of the wafer conveying groove body 6 as shown in Fig. C is energized by, for example, a solenoid mechanism as shown by 9.
If the index pin 10 is projected downward, the index pin 10 will fit into the locking hole 8.
In this state, the wafer 3 fixed by the vacuum chuck 11 is carried from, for example, a wafer 3 cartridge (not shown), and the wafer 3 is transported, as shown by diagonal lines, from a wafer 3 cartridge (not shown). Insert it into the hole 2. Figure A shows the centering portion where the wafer 3 is received from the cartridge, centered, and fixed to the vacuum chuck. The wafer 3 is carried to the left by the pusher 23 from the direction indicated by the arrow. A plurality of air blowing holes 22 are provided on each surface of the support frame 20 that contacts the wafer 3, and the wafer 3 pushed out of the cartridge by the pusher 23 is supported on the support frame 20 by the air from the air blowing holes 22. The centering frame 2 is fed while reducing friction with the frame 20 as much as possible.
It is held in a centering die 24 formed in 1. A sensor detects the contact with the centering mold 24, and in this state the support frame 20 goes down a little, and the vacuum chuck 11 located below attracts it.When the attraction is finished, the vacuum chuck that has attracted the wafer 3 The chuck 11 moves to the insertion position through the open groove 25 between the two centering frames 21.
以上説明したように、芯出用枠２１によつて、
ウエハー３は真空チヤツク１１により、予め定め
られたように正確に保持され、ウエハー搬送溝体
６を移動して、その先端の定まつた点で停止し、
この停止した点の下に挿入する孔２があることに
なるが、前記の二つの位置ぎめと相まつて、ウエ
ハー３の搬送停止位置を正確なものとする。第６
図には本発明に使用されるウエハー搬送溝体６の
先端部分が示される。１４はガイドシヤフトであ
り、２本の平行ガイドシヤフト１４は端板１５と
結合され、ウエハー搬送装置の一部である。可動
支持体１２（第５図Ｂ）に固定支持される。１６
は両ガイドシヤフト１４によつて案内され、ボー
ルスクリユー１７よりの駆動力によつて端板１５
および図示していないが、ウエハーカートリツジ
方向に移動することができる移動物支持体であり
前記移動物支持体１６には真空によつて操作され
るチヤツク１１が一体に固定された回転軸１８に
よつて移動物支持体１６に支持される。１９は空
気制御用のフレキシブルチユーブであり、回転軸
１８を中空としてチヤツク１１に連通する。図示
のチヤツク位置においてチヤツク１１は上向にそ
の吸着面を向けているが、移動物支持体１６が端
板１５と接する前か、接した場合、チヤツク１１
は下方向の矢印で示す方向に反転する。この反転
はチヤツク１１の回転軸１８にミニモーター、電
磁機構あるいは前記ガイドシヤフト１４の端板１
５に近い部分のみにラツクを設け、移動物支持体
１６に歯車等を付設して、前記回転軸１８と係合
させ、丁度移動物支持体１６が端板１５に接した
とき、チヤツク１１が反転を終り、ウエハー３を
穴２，２′に挿入する挿入位置に位置するように
すればよい。 As explained above, by the centering frame 21,
The wafer 3 is accurately held in a predetermined manner by the vacuum chuck 11, moves along the wafer conveying groove 6, and stops at a predetermined point at its tip.
There is a hole 2 to be inserted below this stopped point, but together with the above two positionings, the position at which the wafer 3 is stopped is accurate. 6th
The figure shows the tip portion of the wafer conveying groove body 6 used in the present invention. Reference numeral 14 denotes a guide shaft, and the two parallel guide shafts 14 are coupled to an end plate 15 and are part of a wafer transport device. It is fixedly supported by a movable support 12 (FIG. 5B). 16
is guided by both guide shafts 14, and the end plate 15 is guided by the driving force from the ball screw 17.
Although not shown, there is a movable object support that can move in the direction of the wafer cartridge, and the movable object support 16 has a chuck 11 that is operated by vacuum attached to a rotary shaft 18 that is integrally fixed thereto. Therefore, it is supported by the moving object support 16. Reference numeral 19 designates a flexible tube for air control, which communicates with the chuck 11 with the rotary shaft 18 being hollow. In the illustrated chuck position, the chuck 11 has its suction surface facing upward; however, before or when the moving object support 16 contacts the end plate 15, the chuck 11
is reversed in the direction indicated by the downward arrow. This reversal is accomplished by using a mini motor, an electromagnetic mechanism, or the end plate 1 of the guide shaft 14 on the rotating shaft 18 of the chuck 11.
A rack is provided only in a portion close to 5, and a gear or the like is attached to the movable object support 16 to engage with the rotating shaft 18, so that when the movable object support 16 just comes into contact with the end plate 15, the chuck 11 After completing the reversal, the wafer 3 may be positioned at the insertion position for inserting it into the holes 2, 2'.
以上精確に各部が位置ぎめされているので、真
空チヤツク１１を消勢すれば、ウエハー３は穴２
に挿入される。 Since each part is precisely positioned as described above, when the vacuum chuck 11 is de-energized, the wafer 3 is moved into the hole 2.
inserted into.
この斜線で示す穴２に挿入が終つたあと割出ピ
ンは上昇し、次のウエハー３の挿入にかゝる。 After the insertion into the hole 2 shown by diagonal lines is completed, the index pin rises and the next wafer 3 is inserted.
もし、次に交叉斜線で示す穴２′にウエハー３
を挿入しようとする場合は、デイスク１は１ピツ
チ回動して、交叉斜線で示す穴２′は回転軸０と
ウエハー搬送溝体６を結ぶ線上にくる。この場
合、ウエハー搬送溝体６は、これを一端で支持す
る可動支持体１２が、それを支承する固定支持体
１３に対して中心軸０方向に移動するので、これ
と一体のウエハー搬送溝体６の先端は、丁度交叉
斜線で示す穴２′の対応係子穴８の上にくること
になる。さきに説明したデイスク１周縁の対応係
止部５′に割出片７を係合させ、割出ピン１０を
交叉斜線で示す穴２′に対応する係止穴８に挿入
すれば、同様に内側穴２′にも精確な位置ぎめが
でき、外側の穴２に対するのと同じようにウエハ
ー３を挿入することができる。ウエハー３の取り
はずしはこの逆の順で行われる。 If next, the wafer 3
When attempting to insert the wafer, the disk 1 rotates one pitch so that the hole 2' indicated by the cross-hatched line is on the line connecting the rotating shaft 0 and the wafer conveying groove 6. In this case, since the movable support 12 that supports the wafer conveyance groove 6 at one end moves in the direction of the center axis 0 with respect to the fixed support 13 that supports it, the wafer conveyance groove 6 is integral with the wafer conveyance groove 6. The tip of the hole 6 will be exactly above the corresponding locking hole 8 of the hole 2', which is indicated by crossed diagonal lines. By engaging the indexing piece 7 with the corresponding locking portion 5' on the periphery of the disk 1 described earlier, and inserting the indexing pin 10 into the locking hole 8 corresponding to the hole 2' indicated by crossed diagonal lines, the same process can be performed. The inner hole 2' also allows precise positioning and the wafer 3 can be inserted in the same way as into the outer hole 2. The wafer 3 is removed in the reverse order.
以上の説明から理解されるように、ウエハー搬
送溝体６を支持する可動支持体１２はその固定支
持体１３上で、回転軸０よりの半径方向におい
て、外側の穴２、内側の穴２′に対して２位置を
とるように構成すればよく、それ自体精確な長さ
方向の位置ぎめができ、一方、この可動支持体１
２に支持されるウエハー搬送溝体６も、それ自
体、穴２、穴２′いずれの位置においてもその動
作はかわるところなく、更にカートリツジよりウ
エハー３の真空チヤツク１１による受取りの際は
十分芯出しを行つているので、正確にウエハー３
をデイスク１の穴２，２′に挿入することがで
き、ウエハー３の取りはずしも同様にすることが
できる。 As can be understood from the above description, the movable support 12 supporting the wafer transport groove 6 is arranged on the fixed support 13, with an outer hole 2 and an inner hole 2' in the radial direction from the rotation axis 0. The movable support 1 may be configured to take two positions relative to the movable support 1, which itself provides precise longitudinal positioning.
The wafer conveying groove body 6 supported by the wafer 2 does not change its operation either in the hole 2 or the hole 2', and furthermore, when the wafer 3 is received from the cartridge by the vacuum chuck 11, it is sufficiently centered. Since we are performing wafer 3 accurately,
can be inserted into the holes 2, 2' of the disk 1, and the wafer 3 can be removed in the same way.
また、可動支持体１２のいずれかの位置のみに
よつて回転軸０の半径方向に移動するだけである
ので、イオン注入装置内の狭いスペースのデイス
ク上での作業という点で、本発明の装置は好適な
装置ということができる。 In addition, since the movable support 12 is only moved in the radial direction of the rotation axis 0 by any position, the device of the present invention is advantageous in terms of working on a disk in a narrow space within an ion implantation device. can be said to be a suitable device.
以上一例について説明したが、本発明において
その思想を損わないかぎり各構成部分について、
改変ができることはいうまでもない。 Although one example has been explained above, each component of the present invention may be
Needless to say, changes can be made.
第１図、第２図はウエハーを保持するデイスク
の説明図である。第３図は従来のデイスクにおけ
る回転角割出の説明図である。第４図は本発明の
補助的説明図である。第５図Ａ図は本発明のウエ
ハー芯出部を説明する図であり、Ｂ，Ｃ図は概略
的に示された本発明の一実施例上面図および側面
図である。第６図は本発明に用いられるウエハー
搬送溝体の先端部分の一例を示す図である。
１……デイスク、２，２′……デイスク上に設
けられたウエハー保持用の穴、３……ウエハー、
４……穴２，２′の中間段部、５……デイスク周
縁部の係止部、６……搬送溝体、７……位置割出
片、８……係止穴、９……ソレノイド機構、１０
……割出ピン、１１……真空チヤツク、１２……
可動支持体、１３……固定支持体、１４……ガイ
ドシヤフト、１５……端板、１６……移動物支持
体、１７……ボールスクリユー、１８……回転
軸、１９……フレキシブルチユーブ、２０……支
持枠、２１……芯出用枠、２２……空気吹出孔、
２３……プツシヤー、２４……芯出型、２５……
両芯出用枠２１の開溝。
FIGS. 1 and 2 are explanatory diagrams of a disk that holds a wafer. FIG. 3 is an explanatory diagram of rotation angle indexing in a conventional disk. FIG. 4 is a supplementary explanatory diagram of the present invention. FIG. 5A is a diagram illustrating a wafer centering section of the present invention, and FIGS. 5B and 5C are a top view and a side view of an embodiment of the present invention schematically shown. FIG. 6 is a diagram showing an example of the tip end portion of the wafer conveying groove body used in the present invention. 1... Disk, 2, 2'... Hole for holding a wafer provided on the disk, 3... Wafer,
4... Intermediate step part of holes 2, 2', 5... Locking part at disk peripheral edge, 6... Conveyance groove body, 7... Position indexing piece, 8... Locking hole, 9... Solenoid Mechanism, 10
... Index pin, 11 ... Vacuum chuck, 12 ...
Movable support, 13... Fixed support, 14... Guide shaft, 15... End plate, 16... Moving object support, 17... Ball screw, 18... Rotating shaft, 19... Flexible tube, 20... Support frame, 21... Centering frame, 22... Air blowing hole,
23... Pusher, 24... Centering type, 25...
Open groove of both centering frames 21.
Claims (1)
くとも内外２列にウエハー保持穴と前記各穴に対
応する位置ぎめ用係止穴を設けるとともに前記デ
イスクの周縁にデイスクの回転位置ぎめ用の係止
部を設けたデイスクをイオン粒子加速装置上に回
転可能に支持し、前記デイスク上に、先端に前記
位置ぎめ用係止穴と係合する割出しピンを具え、
ウエハーを搬送するチヤツク付移動物支持体を備
えたウエハー搬送溝体を、前記デイスクの回転軸
方向に可動できる可動支持体によつて突出させ、
前記のデイスクの周縁に設けられた係止部と前記
ウエハー搬送溝体側に設けられた位置割出片およ
び前記デイスク上の対応位置ぎめ係止穴とウエハ
ー搬送溝体先端の割出ピンの係合により、前記ウ
エハー搬送溝体により個別に各穴に対してウエハ
ーの着脱をなし得るように構成したことを特徴と
するイオン注入装置におけるウエハー搬送装置。 ２ ウエハー搬送作業中、ウエハー搬送溝体はデ
イスクの回転軸方向に対し、すくなくとも２位置
がとれることを特徴とする特許請求の範囲第１項
記載のイオン注入装置におけるウエハー搬送装
置。[Scope of Claims] 1. Wafer holding holes and locking holes for positioning corresponding to each of the holes are provided on the disk surface in at least two rows, inside and outside, concentrically with the rotation axis thereof, and at the periphery of the disk, rotation of the disk is provided. A disk provided with a locking portion for positioning is rotatably supported on an ion particle accelerator, and an index pin is provided on the disk at its tip to engage with the locking hole for positioning,
A wafer conveying groove body equipped with a movable object support body with a chuck for conveying the wafer is projected by a movable support body movable in the direction of the rotation axis of the disk,
Engagement between a locking portion provided on the periphery of the disk, a positioning piece provided on the side of the wafer conveying groove, and a corresponding positioning locking hole on the disk and an indexing pin at the tip of the wafer conveying groove. A wafer transfer device for an ion implantation apparatus, characterized in that the wafer transfer groove is configured such that wafers can be individually attached to and removed from each hole. 2. The wafer transfer device in an ion implantation apparatus according to claim 1, wherein during the wafer transfer operation, the wafer transfer groove can take at least two positions with respect to the rotational axis direction of the disk.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55178295A JPS57101327A (en) | 1980-12-16 | 1980-12-16 | Wafer carrier in ion implanting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55178295A JPS57101327A (en) | 1980-12-16 | 1980-12-16 | Wafer carrier in ion implanting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57101327A JPS57101327A (en) | 1982-06-23 |
| JPS6116151B2 true JPS6116151B2 (en) | 1986-04-28 |
Family
ID=16045966
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55178295A Granted JPS57101327A (en) | 1980-12-16 | 1980-12-16 | Wafer carrier in ion implanting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57101327A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63188043U (en) * | 1987-05-26 | 1988-12-01 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2529383A1 (en) * | 1982-06-24 | 1983-12-30 | Commissariat Energie Atomique | MECHANICAL SCANNING TARGET HOLDER USABLE IN PARTICULAR FOR THE IMPLANTATION OF IORIS |
| JPS6267458U (en) * | 1985-10-17 | 1987-04-27 | ||
| US4941800A (en) * | 1988-10-21 | 1990-07-17 | Tokyo Electron Limited | Transfer apparatus for plate-like member |
-
1980
- 1980-12-16 JP JP55178295A patent/JPS57101327A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63188043U (en) * | 1987-05-26 | 1988-12-01 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57101327A (en) | 1982-06-23 |
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