JPS611906B2 - - Google Patents

Info

Publication number
JPS611906B2
JPS611906B2 JP58203738A JP20373883A JPS611906B2 JP S611906 B2 JPS611906 B2 JP S611906B2 JP 58203738 A JP58203738 A JP 58203738A JP 20373883 A JP20373883 A JP 20373883A JP S611906 B2 JPS611906 B2 JP S611906B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58203738A
Other versions
JPS6097664A (ja
Inventor
Masao Taguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58203738A priority Critical patent/JPS6097664A/ja
Publication of JPS6097664A publication Critical patent/JPS6097664A/ja
Publication of JPS611906B2 publication Critical patent/JPS611906B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/30DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor

Landscapes

  • Semiconductor Memories (AREA)
JP58203738A 1983-11-01 1983-11-01 半導体記憶装置 Granted JPS6097664A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58203738A JPS6097664A (ja) 1983-11-01 1983-11-01 半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58203738A JPS6097664A (ja) 1983-11-01 1983-11-01 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS6097664A JPS6097664A (ja) 1985-05-31
JPS611906B2 true JPS611906B2 (ja) 1986-01-21

Family

ID=16479030

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58203738A Granted JPS6097664A (ja) 1983-11-01 1983-11-01 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS6097664A (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2671315B2 (ja) * 1987-09-18 1997-10-29 ソニー株式会社 メモリ装置
US5183772A (en) * 1989-05-10 1993-02-02 Samsung Electronics Co., Ltd. Manufacturing method for a DRAM cell

Also Published As

Publication number Publication date
JPS6097664A (ja) 1985-05-31

Similar Documents

Publication Publication Date Title
BR8407173A (ja)
AT378328B (ja)
GR72877B (ja)
AU1412583A (ja)
AU9008182A (ja)
BR6301293U (ja)
BG35481A1 (ja)
BG41847A1 (ja)
BG43549A1 (ja)
BG44566A1 (ja)
BG44569A1 (ja)
BG44583A1 (ja)
BG44584A1 (ja)
BG44586A1 (ja)
BG44587A1 (ja)
BG44648A1 (ja)
BG44651A1 (ja)
BG44655A1 (ja)
BG44700A1 (ja)
BG44760A1 (ja)
BG44763A1 (ja)
BG44795A1 (ja)
BG44882A1 (ja)
BG44897A1 (ja)
BG44913A1 (ja)