JPS61218902A - Position measuring method - Google Patents
Position measuring methodInfo
- Publication number
- JPS61218902A JPS61218902A JP5952985A JP5952985A JPS61218902A JP S61218902 A JPS61218902 A JP S61218902A JP 5952985 A JP5952985 A JP 5952985A JP 5952985 A JP5952985 A JP 5952985A JP S61218902 A JPS61218902 A JP S61218902A
- Authority
- JP
- Japan
- Prior art keywords
- light
- measured
- measuring method
- incident
- reflected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/026—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness by measuring distance between sensor and object
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Measurement Of Optical Distance (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は、被測定物の位置を光学的に測定する位置測定
方法に係わり、特に被測定物面の高さを測定するのに適
した位置測定方法に関する。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to a position measurement method for optically measuring the position of an object to be measured, and particularly to a position measurement method for optically measuring the position of an object to be measured, and particularly to a position measurement method for optically measuring the position of an object to be measured. Regarding measurement methods.
L8I製造装置、例えば電子ビーム露光装置において、
半導体ウェハやマスク基板等の試料にパタiンを描画形
成する場合、試料の反9その他の要因によυ試料表面の
高さく光学系に対する距離)が変動すると、描画パター
ンに誤差が生じる。そこで従来、試料の高さ方向の変動
量を測定し、誼変動食に応じてその補正を行う方法を採
用しているO
被測定物としての試料表面の高さ測定装置としては、第
6図に示す如く光学的手法を利用したものがある(特開
昭56−2632号公報)。この装置では、レーザ光源
りから放射された光をレンズL1によりスポット状に集
束して試料面上忙照射し、その反射光をレンズL、によ
ってラテラル光効果を用いた半導体装置検出器り上に結
像させる。そして、この検出器りの検出出力を演算処理
することによって、試料表面の高さ位置を測定している
。In L8I manufacturing equipment, for example, electron beam exposure equipment,
When drawing and forming a pattern on a sample such as a semiconductor wafer or a mask substrate, if the angle of the sample (i.e., the height of the sample surface and the distance to the optical system) changes due to other factors, errors will occur in the drawn pattern. Conventionally, therefore, a method has been adopted in which the amount of variation in the height direction of the sample is measured and the variation is corrected according to the variation in the height of the sample. There is a method using an optical method as shown in (Japanese Unexamined Patent Publication No. 56-2632). In this device, the light emitted from the laser light source is focused into a spot by the lens L1 and irradiated onto the sample surface, and the reflected light is directed by the lens L onto the semiconductor device detector using the lateral light effect. form an image. The height position of the sample surface is measured by processing the detection output of this detector.
しかしながら、この種の測定装置にあっては次のような
問題があった。即ち、試料面上に照射された光束内で、
第7図に示す如く試料700表面に反射率の高い部分7
1と反射率の低い部分72とがあると、反射率の差異に
よる光束内光量分布にアンバランスが生じ測定誤差を生
じる。例えば、最近多くの所で使用されている光量の重
心位置を測定するP8D (半導体装置検出素子4)t
−検出器に使用した場合、第8図(a)に示す如き、光
量分布の差によって、同図(b)に示す如く重心位置が
変動してしまい、測定誤差を生じる。−!た、例えば光
竜顕微鏡等で良く知られている振動スリット法による位
置検出手段によっても同様なことが言え、光束内光量分
布の変化によって測定誤差を生じることになこのような
誤差を低減させる方法の1つとしてスリット状の入射光
を被測定面上のパターン(多くの場合直交している)K
対して傾けて照射する特開昭56−42205号公報に
述べられている方法がある。この方法によると直交パタ
ーンに対して45″傾けることが最大の効果が得られる
。However, this type of measuring device has the following problems. In other words, within the light beam irradiated onto the sample surface,
As shown in FIG. 7, a portion 7 with high reflectance on the surface of the sample 700
1 and a portion 72 with low reflectance, the difference in reflectance causes an imbalance in the light amount distribution within the luminous flux, resulting in a measurement error. For example, P8D (semiconductor device detection element 4) t, which measures the center of gravity of light quantity, is used in many places these days.
- When used as a detector, the difference in light intensity distribution as shown in FIG. 8(a) causes the center of gravity to vary as shown in FIG. 8(b), resulting in measurement errors. -! The same thing can be said for position detection means using the vibrating slit method, which is well known in the Koryu microscope, for example, and measurement errors occur due to changes in the light intensity distribution within the light beam.Therefore, there is a method to reduce such errors. As one of the methods, the slit-shaped incident light is formed into a pattern (often orthogonal) K on the surface to be measured.
There is a method described in Japanese Unexamined Patent Application Publication No. 56-42205, in which the irradiation is performed while being tilted. According to this method, the maximum effect can be obtained by tilting the pattern by 45'' with respect to the orthogonal pattern.
しかしながら、半導体ICパターンでは直交パターンの
他に任意の傾きをもったパターンを作る場合も多く、上
記方法では十分圧測定誤差を低減することができなかっ
た。However, in semiconductor IC patterns, in addition to orthogonal patterns, patterns with arbitrary inclinations are often created, and the above method has not been able to sufficiently reduce pressure measurement errors.
本発明は上記事情を考慮してなされたもので、その目的
とするところは、被測定面の□反射率の差によって生じ
る測定誤差を低減□することができ、測定精度の向上を
はかり得る位置測定方法を提供することにある。The present invention has been made in consideration of the above circumstances, and its purpose is to reduce measurement errors caused by differences in reflectance of the surface to be measured, and to improve measurement accuracy. The objective is to provide a measurement method.
本発明の骨手は、反゛射光の光束内光量分布の変化によ
る測定誤差を低減するために、入射光を振動させてその
誤差を平均化することにある。The key point of the present invention is to vibrate the incident light to average out the errors in order to reduce measurement errors caused by changes in the distribution of the amount of reflected light within the light beam.
即ち本発明は、被測定物の表面に対し斜め方向から集束
光をパターンに傾けて照射し、被測定物の表面で反射さ
れた反射光を光検出器で検出して部門表面の2位置を測
定する位置測定方法において、前記被測定物の表面に入
射する入射光を振動し、該撮動によって或いは被測定物
表面上のパターン若しくは反射率の差によって変動する
前記光検出器の検出信号を平均化処理するようにしたも
のである。That is, the present invention irradiates the surface of the object to be measured with focused light in a pattern from an oblique direction, detects the reflected light from the surface of the object with a photodetector, and detects two positions on the surface of the object. In the position measuring method, the incident light incident on the surface of the object to be measured is vibrated, and a detection signal of the photodetector that varies due to the imaging or a pattern on the surface of the object to be measured or a difference in reflectance is detected. This is an averaging process.
また、本発明は上記構成に加え、前記被測定物表面から
の反射光を振動して、入射光の振動に起因する検出器上
での反射光の位置変動をなくすようにしたものである。Further, in addition to the above configuration, the present invention vibrates the reflected light from the surface of the object to be measured to eliminate positional fluctuations of the reflected light on the detector due to vibration of the incident light.
本発明によれば、被測定物表面に入射するノくターンに
傾けて照射された入射光を振動させ、被測定物表面上で
の多数の測定点を平均化しているので、従来方法に比し
て被測定物表面の反射率の差異等に起因する測定誤差を
大幅に低減することができる。さらに、従来方法に比し
て入射光を振動させる構成、例えば振動ミラーを付加す
るのみで容易に実現できる等の利点がある。また、被測
定物表面からの反射光をも振動させることによ妙、入射
光の振動によるダイナミックレンジの縮小を防ぐことが
できる。According to the present invention, the incident light incident on the surface of the object to be measured is oscillated and is irradiated at an angle of 100 degrees, and a large number of measurement points on the surface of the object to be measured are averaged. As a result, measurement errors caused by differences in reflectance on the surface of the object to be measured can be significantly reduced. Furthermore, compared to conventional methods, this method has the advantage that it can be easily realized by simply adding a configuration that vibrates the incident light, for example, by adding a vibrating mirror. Furthermore, by also vibrating the reflected light from the surface of the object to be measured, reduction in the dynamic range due to vibration of the incident light can be prevented.
以下、本発明の詳細を図面を参照しながら説明する。 Hereinafter, details of the present invention will be explained with reference to the drawings.
第1図は本発明の一実施例に於いて用いる試料面高さ測
定装置を示す概略構成図である。なお、この実施例では
電子ビーム露光装置の試料室に配置され、試料室内の試
料面の高さを測定するものとした。図中10は電子ビー
ム露光装置の試料室を形成する真空容器であり、この容
器10の土壁には電子ビーム光学鏡筒(以下BO8と略
記する)20が取付けられている。BO820は電子銃
、各種レンズ及び各種偏向系等からなるもので、このB
O320からの電子ビームは容器10内に配置された被
測定物としての試料30上に照射されるものとなってい
る。FIG. 1 is a schematic configuration diagram showing a sample surface height measuring device used in an embodiment of the present invention. In this example, it is arranged in a sample chamber of an electron beam exposure apparatus, and the height of the sample surface inside the sample chamber is measured. In the figure, 10 is a vacuum container forming a sample chamber of an electron beam exposure apparatus, and an electron beam optical column (hereinafter abbreviated as BO8) 20 is attached to the earthen wall of this container 10. BO820 consists of an electron gun, various lenses, various deflection systems, etc.
The electron beam from O320 is irradiated onto a sample 30 as an object to be measured placed inside the container 10.
gos20の左右には、本実施例に係わる試料面高さ測
定装置を構成する照射系40及び受光系50がそれぞれ
設けられている。照射系40は、レーザ光源41、スリ
ット429反射ミラー43.44.集束レンズ45、反
射ミラー(振動ミラー)46.振動器47及び駆動回路
48等から構成されている。レーザ光源41から放射さ
れた光はスリット42を通過し、反射ミラー43.44
で反射され、集束レンズ45により集束されて振動ミラ
ー46に照射される。そして、振動ミラー46で反射さ
れた集束光49が前記試料30の表面に照射されるもの
となっている。ここで、上記集束光49が試料30に対
する入射光となる。On the left and right sides of the GOS 20, an irradiation system 40 and a light receiving system 50, which constitute the sample surface height measuring device according to this embodiment, are provided, respectively. The irradiation system 40 includes a laser light source 41, a slit 429 and a reflecting mirror 43, 44. Focusing lens 45, reflecting mirror (vibrating mirror) 46. It is composed of a vibrator 47, a drive circuit 48, and the like. The light emitted from the laser light source 41 passes through the slit 42 and is reflected by the reflecting mirrors 43 and 44.
The light is reflected by the focusing lens 45 and is focused onto the vibrating mirror 46 . The surface of the sample 30 is irradiated with focused light 49 reflected by the vibrating mirror 46. Here, the focused light 49 becomes incident light on the sample 30.
試料面上の入射スリット像9は第9図に示すように、例
えば試料面の直交パターン100(すなわち反射率の変
化をもたらすパターン−)に対して45″′の傾きをも
って照射される。この場合456以外の角度でも良い。As shown in FIG. 9, the incident slit image 9 on the sample surface is irradiated with an inclination of, for example, 45'' with respect to the orthogonal pattern 100 on the sample surface (i.e., the pattern that causes a change in reflectance). An angle other than 456 may be used.
振動ミラー46は圧電素子からなる振動器47に取付け
られており、振動器47は駆動回路48により振動され
るものとなっている。ここで、振動ミラー46の振動数
は試料面高さ変動測定周波数より十分高い周波数である
。また、振動振幅は後述するpso等の光検出器の受光
面の長さ或いは誤差を低減させる割合い等に応じて定め
ればよい。The vibrating mirror 46 is attached to a vibrator 47 made of a piezoelectric element, and the vibrator 47 is vibrated by a drive circuit 48. Here, the frequency of the vibrating mirror 46 is sufficiently higher than the sample surface height fluctuation measurement frequency. Further, the vibration amplitude may be determined depending on the length of the light-receiving surface of a photodetector such as PSO, which will be described later, or the rate at which the error is reduced.
一方、受光系50は、反射ミラー51.集束レンズ52
、光検出器として公知のラテラル光効果を用いた半導体
装置検出器(P8D)53.加算器54.減算器55.
除算器56.平均化処理回路57及び位置測定回路58
等から構成されている。前記試料30の表面への入射光
49の照射による反射光59は、反射ミラー51で反射
され集束レンズ52を介してP 8 D 53の受光面
に結像される。P8D53は半導体基板上に抵抗性薄膜
を形成すると共に、咳薄膜の両端に出力端子を設け、半
導体基板を接地したもので、光スポットの抵抗性薄膜照
射位置の変位により一対の出力端子からアンバランスな
信号が出力される。On the other hand, the light receiving system 50 includes a reflecting mirror 51 . Focusing lens 52
, semiconductor device detector (P8D) using lateral light effect, known as a photodetector 53. Adder 54. Subtractor 55.
Divider 56. Averaging processing circuit 57 and position measurement circuit 58
It is composed of etc. The reflected light 59 resulting from the irradiation of the incident light 49 onto the surface of the sample 30 is reflected by the reflecting mirror 51 and is imaged on the light receiving surface of the P 8 D 53 via the focusing lens 52. P8D53 is a product in which a resistive thin film is formed on a semiconductor substrate, output terminals are provided at both ends of the thin film, and the semiconductor substrate is grounded.Unbalance is generated from a pair of output terminals due to displacement of the resistive thin film irradiation position of the light spot. A signal is output.
P8D 53の検出信号は、加算器54.減算器55及
び除算器56等からなる信号処理回路により信号処理さ
れて平均化処理回路57に入力される。平均化処理回路
57は上記入力した信号を例えばローパスフィルタを通
して平均化するものであり、この平均化された信号(位
置信号)は位置測定回路58に供給される。位置測定回
路58は、上記入力した位置信号に応じて前記試料30
0表面高さ位置を演算するものとなっている。The detection signal of P8D 53 is sent to adder 54. The signal is processed by a signal processing circuit including a subtracter 55, a divider 56, etc., and is input to an averaging processing circuit 57. The averaging processing circuit 57 averages the input signal through, for example, a low-pass filter, and this averaged signal (position signal) is supplied to the position measuring circuit 58. The position measurement circuit 58 moves the sample 30 according to the input position signal.
The 0 surface height position is calculated.
このような構成であれば、スリット状の入射光をパター
ンに対して傾けて照射する効果と入射光を振動させる効
果とが総合され、非常に誤差の少ない位置検出装置を提
供できる。すなわち、第10図に示すようにスリット状
の入射光101をパターン102に対して傾けて照射す
る効果は、例えば照射光でのスリット幅をW、スリット
長さをjとしてl/W = 10の場合について測定誤
差を計算すると第11図のθ=00にたイシテ、第12
図f)a=45” ト低減する。さら1cP8D53及
び信号処理回路9.〜。With such a configuration, the effect of irradiating the slit-shaped incident light at an angle with respect to the pattern and the effect of vibrating the incident light are combined, and a position detection device with very few errors can be provided. That is, as shown in FIG. 10, the effect of irradiating the slit-shaped incident light 101 at an angle with respect to the pattern 102 is, for example, when the slit width in the irradiated light is W and the slit length is l/W = 10. When calculating the measurement error for the case, it is found that θ=00 in Fig.
Figure f) a=45''.Furthermore, 1cP8D53 and signal processing circuit 9.
56で得られる検出出力は第2図の曲線lに示す如く前
記振動ミラー46の振動数及び振幅に相当するsin波
となる。このとき、途中で反射率に差のある所を光束が
通った場合、図中破線で示したような誤差信号が生じる
。しかし、その信号を、例えば一番簡単な方法としてフ
ィルターを通して平均化することくよって、線2として
示されるように誤差信号は振動振幅全体に亙りて平均化
されることになり、入射光を振動させない時に比べて大
幅に誤差が低減することになる。即ち、入射光49の入
射角を振動させ試料面上で多数の測定点を平均化させる
ことKより、従来の方式によるものより測定誤差が大幅
に低減されることKなる。The detection output obtained at 56 becomes a sine wave corresponding to the frequency and amplitude of the vibrating mirror 46, as shown by curve 1 in FIG. At this time, if the light beam passes through a place where there is a difference in reflectance along the way, an error signal as shown by the broken line in the figure is generated. However, by averaging the signal, for example through a filter in the simplest way, the error signal will be averaged over the entire oscillation amplitude, as shown by line 2, and the incoming light will be oscillated. The error will be significantly reduced compared to when it is not used. That is, by vibrating the incident angle of the incident light 49 and averaging a large number of measurement points on the sample surface, the measurement error is significantly reduced compared to the conventional method.
このように本実施例によれば、パターンにたいして傾け
た入射光49を振動させることKより試料面の反射率の
差異等に起因する測定誤差を大幅に低減することができ
る。このため、試料面の高さ測定を高精度に行うことが
できる。また、従来装置に比して、ミラー46を振動す
る機構を設けるのみの簡易な構造で実現できる等の利点
がある。As described above, according to this embodiment, by vibrating the incident light 49 tilted with respect to the pattern, it is possible to significantly reduce measurement errors caused by differences in reflectance of the sample surface. Therefore, the height of the sample surface can be measured with high precision. Furthermore, compared to conventional devices, there is an advantage that it can be realized with a simple structure that only requires a mechanism for vibrating the mirror 46.
第3図唸本発明の他の実施例で用いる装置の概略構成図
である。なお、第1図と同一部分には同一符号を付して
、その詳しい説明は省略する。この実施例が先に説明し
た実施例と異なる点は、照射系側のミラー捕のみならず
、受光系側のミラー51も振動するようにしたことにあ
る。即ち、ミラー51は振動器61に取付けられており
、この振動器61は前記駆動回路48により駆動される
ものとなっている。ここで、ミラー51の振動は、前記
ミラー46の振動とは正確に逆位相である。また、光学
倍率をキャンセルするようKその振動振幅は、入射光4
9の振動によるP8D 53上での光束の振動が生じな
いように調整されている。つまり、入射光49の振動が
生じても、受光側の反射光590P8D 53上での位
置は変動しないものとなっている。FIG. 3 is a schematic configuration diagram of an apparatus used in another embodiment of the present invention. Note that the same parts as in FIG. 1 are given the same reference numerals, and detailed explanation thereof will be omitted. This embodiment differs from the previously described embodiments in that not only the mirror catch on the irradiation system side but also the mirror 51 on the light receiving system side vibrates. That is, the mirror 51 is attached to a vibrator 61, and this vibrator 61 is driven by the drive circuit 48. Here, the vibration of the mirror 51 is exactly in opposite phase to the vibration of the mirror 46. In addition, the vibration amplitude of K so as to cancel the optical magnification is
The adjustment is made so that the vibration of the light beam on the P8D 53 does not occur due to the vibration of the P8D 53. In other words, even if the incident light 49 vibrates, the position on the reflected light 590P8D 53 on the light receiving side does not change.
このような構成であれば、入射光49の振動によるもの
は反射光59の補正によってキャンセルされ、実際の試
料面の高さ方向による光束の移動は入射光49の振動成
分と異なるため、PaD53上には光束の移動として現
われてくることkなる。即ち、反射光59を振動させな
い場合第4図(a) K示す如く検出出力に入射光49
の振動成分が現われるが、反射光59を振動させた場合
同図(b)に示す如く入射光49の振動成分は現われな
いことKなる。従って、P8D 53上での光束の移動
は、実際の試料面の高さ変動によるもののみとなり、検
出器の測定ダイナミックレンジが拡大することになる。With such a configuration, the vibration of the incident light 49 is canceled by the correction of the reflected light 59, and since the movement of the light flux in the height direction of the actual sample surface is different from the vibration component of the incident light 49, This appears as a movement of the luminous flux. That is, when the reflected light 59 is not vibrated, the incident light 49 is input to the detection output as shown in FIG.
However, when the reflected light 59 is vibrated, the vibration component of the incident light 49 does not appear, as shown in FIG. 4(b). Therefore, the movement of the light beam on the P8D 53 is only due to the actual height variation of the sample surface, and the measurement dynamic range of the detector is expanded.
また、その分だけ、小さな検出器を用いることが可能と
なり、検出器の分解能が上がることkなる。Furthermore, it becomes possible to use a smaller detector, and the resolution of the detector increases accordingly.
ここで、前記第1図に示す装置では、入射光49の振動
により検出器(P8D)側で光束が第5図に示す如く変
動してしまう。なお、第5図中53aはP8D53の受
光面、59aは反射光59の結像光束を示している。こ
れらは検出器から後の信号処理回路によってフィルター
等を通して平均化し、正確な位置座標として算出してい
るが、検出器側の光束は試料面高さ方向の変位感度を稼
ぐためには、光学倍率によって拡大する必要がある。こ
の場合、入射光49を微小に振動させても検出器の測定
範囲内金体に光束が振動してしまう。大盤の検出器を用
いるとこの点はカバーできるが、この場合測定分解能が
低下する虞れがあるので、むやみに大きな検出器を用い
ることはできない。このような理由から、測定のダイナ
ミックレンジを大きくすることは難しくなるのである。Here, in the apparatus shown in FIG. 1, the light flux on the detector (P8D) side fluctuates as shown in FIG. 5 due to the vibration of the incident light 49. In FIG. 5, 53a indicates the light receiving surface of the P8D 53, and 59a indicates the imaging light beam of the reflected light 59. These are averaged through a filter etc. by the signal processing circuit after the detector and calculated as accurate position coordinates, but the light flux on the detector side is need to be expanded by In this case, even if the incident light 49 is slightly vibrated, the light beam will vibrate within the measurement range of the detector. This point can be covered by using a large detector, but in this case, there is a risk that the measurement resolution will decrease, so an unnecessarily large detector cannot be used. For these reasons, it becomes difficult to increase the dynamic range of measurements.
これに対し本実施例では、反射光59を上記入射光49
の振動と同期して逆位相に振動することKより、入射光
49を振動しても、検出器の測定範囲内で光束が移動す
ることはないのである。従って本実施例によれば、先の
実施例と同様な効果は勿論のこと、測定のダイナミック
レンジを拡大することができ、その効果は絶大である。On the other hand, in this embodiment, the reflected light 59 is converted into the incident light 49.
Because it vibrates in an opposite phase in synchronization with the vibration of K, even if the incident light 49 is vibrated, the light flux will not move within the measurement range of the detector. Therefore, according to this embodiment, not only the same effect as the previous embodiment can be obtained, but also the dynamic range of measurement can be expanded, and the effect is enormous.
なお、本発明は上述した各実施例に限定されるものでは
ない。例えば、前記試料面上に入射する入射光はスリッ
ト状の集束光に限るものではなく、円形スポット状であ
ってもよい。また、試料表面に入射する入射光を振動さ
せる手段として、入射角を機械的に振動する以外に、例
えば音響的手段を用いた方法、また電圧を印加すること
Kより光の偏向面の透過率と屈折率が異なるようなもの
を用いてもよい。機械的な駆動方法としても圧電素子を
用いたり、電磁的なものを使用してもよい。Note that the present invention is not limited to the embodiments described above. For example, the incident light incident on the sample surface is not limited to a slit-shaped focused beam, but may be a circular spot-shaped beam. In addition to mechanically vibrating the angle of incidence, as a means of vibrating the incident light incident on the sample surface, for example, acoustic means may be used, and the transmittance of the light deflection surface may be increased by applying a voltage. A material having a different refractive index may also be used. As a mechanical driving method, a piezoelectric element or an electromagnetic method may be used.
また、入射角を振動させる代りK、入射光位置を平行容
重することによって振動させることも可能である。さら
に、平均化処理回路は、前記除算器の前段若しくは加減
算器の前後に設置してもよい。Moreover, instead of vibrating the incident angle, it is also possible to vibrate by parallelizing the position of the incident light. Further, the averaging processing circuit may be installed before the divider or before and after the adder/subtractor.
また、実施例では試料面の高さ測定について説明したが
、本発明は位置測定に広く利用することが可能である。Furthermore, although the embodiment describes the measurement of the height of the sample surface, the present invention can be widely used for position measurement.
また、信号処理については一番簡単な方法としてローパ
スフィルターを通して平均化する方法を述べたが、他の
方法であってもよいのは勿論である。さらに、振動振幅
は大きい程平均化効果が大きく誤差を低減できるが、装
置の仕様に応じて適宜定めればよい。また、振動波形は
正弦波に限るものではなく、三角波、鋸歯状波等に適宜
変更可能である。さらに、光源は連続点灯でも、変調さ
れていてもよい。また、前記位置測定回路は必ずしも必
要はなく、例えば前記平均化処理回路の出力を直接高さ
制御機構に送ることもできる。その他、本発明の要旨を
逸脱しない範囲で、種々変形して実施することができる
。Further, regarding signal processing, although the method of averaging through a low-pass filter has been described as the simplest method, it goes without saying that other methods may be used. Furthermore, the larger the vibration amplitude, the greater the averaging effect and the ability to reduce errors, but it may be determined as appropriate depending on the specifications of the device. Further, the vibration waveform is not limited to a sine wave, but can be appropriately changed to a triangular wave, a sawtooth wave, or the like. Furthermore, the light source may be continuously lit or modulated. Furthermore, the position measuring circuit is not necessarily required; for example, the output of the averaging circuit can be sent directly to the height control mechanism. In addition, various modifications can be made without departing from the gist of the present invention.
第1図は本発明の一実施例で用いる試料面高さ測定装置
を示す概略構成図、第2図は上記実施例の作用を説明す
るための信号波形図、第3図は本発明の他の実施例で用
いる装置を示す概略構成図、第4図は上記能の実施例の
作用を説明するための信号波形図、第5図は入射光を振
動した場合の問題点を説明するだめの模式図、第6図乃
至第8図はそれぞれ従来方法の問題点を説明するための
図、第9図及び第10図はパターンに対し入射光が傾斜
した場合の説明図、第11図及び第12図は各々本発明
の効果を示す特性図である。
10・・真空容器、20・・電子光学鏡筒、30・・・
試料、旬・・・照射系、41・・・レーザ光源、45,
52・・・集束レンズ、46.51・・・反射ミラー(
振動ミラー)、47.61・・・振動器、48・駆動回
路、53・・検出器(P13D)、54.55.56・
・・信号処理回路、57・・・平均化処理回路、58
位置測定回路、100,102・・・試料面パタ−ン
、99.101・・・試料面上の入射スリット像。
(7317) 代理人 弁理士 則 近 憲 佑 (
ほか1名)第1図
第2図
第4図
53a
第6図
トw−4
第8図
第9図
第10図
パターンエツジ°イを量 −%/w
第11図
第12図Fig. 1 is a schematic configuration diagram showing a sample surface height measuring device used in an embodiment of the present invention, Fig. 2 is a signal waveform diagram for explaining the operation of the above embodiment, and Fig. 3 is a diagram showing a sample surface height measuring device used in an embodiment of the present invention. Fig. 4 is a signal waveform diagram for explaining the operation of the above-mentioned embodiment, and Fig. 5 is a diagram for explaining the problem when the incident light is vibrated. The schematic diagrams, FIGS. 6 to 8 are diagrams for explaining the problems of the conventional method, respectively. FIG. 12 is a characteristic diagram showing the effects of the present invention. 10... Vacuum container, 20... Electron optical lens barrel, 30...
Sample, season...Irradiation system, 41...Laser light source, 45,
52...Focusing lens, 46.51...Reflecting mirror (
Vibration mirror), 47.61... Vibrator, 48. Drive circuit, 53.. Detector (P13D), 54.55.56.
...Signal processing circuit, 57...Averaging processing circuit, 58
Position measurement circuit, 100, 102... Sample surface pattern, 99.101... Incident slit image on the sample surface. (7317) Agent: Patent Attorney Noriyuki Chika (
Figure 1 Figure 2 Figure 4 Figure 53a Figure 6 Figure w-4 Figure 8 Figure 9 Figure 10 Pattern edge amount -%/w Figure 11 Figure 12
Claims (11)
集束光を被測定面上のパターンに対して傾けて照射する
と共に上記被測定物の表面に入射する入射光を振動せし
め、前記光照射により被測定物の表面で反射された反射
光を検出して前記振動によつて変化する前記被測定物の
位置に応じた信号を得て、この検出信号を平均化処理す
ることを特徴とする位置測定方法。(1) The surface of the object to be measured is irradiated with slit-shaped focused light obliquely to the pattern on the surface to be measured, and the incident light incident on the surface of the object to be measured is vibrated; It is characterized by detecting the reflected light reflected on the surface of the object to be measured by the irradiation to obtain a signal corresponding to the position of the object to be measured that changes due to the vibration, and averaging the detected signal. position measurement method.
置検出素子を用いたことを特徴とする特許請求の範囲第
1項記載の位置測定方法。(2) The position measuring method according to claim 1, wherein a semiconductor device detection element using a lateral light effect is used for the light detection.
素子を用い、この圧電素子により集束光を反射して前記
被測定物表面に照射するミラーを振動させることを特徴
とする特許請求の範囲第1項記載の位置測定方法。(3) In order to vibrate the incident light, a piezoelectric element is used as a driving source, and the piezoelectric element vibrates a mirror that reflects the focused light and irradiates it onto the surface of the object to be measured. The position measuring method according to scope 1.
フィルタを用いたことを特徴とする特許請求の範囲第1
項記載の位置測定方法。(4) Claim 1, characterized in that a low-pass filter is used to average the detection signal.
Position measurement method described in section.
集束光を被測定面上のパターンに対して傾けて照射する
と共に、上記被測定物の表面に入射する入射光を振動せ
しめ、また前記光照射により被測定物の表面で反射され
た反射光を振動させて上記振動された反射光を検出して
前記被測定物の位置に応じた信号を得て、この検出信号
を平均化処理することを特徴とする位置測定方法。(5) The surface of the object to be measured is irradiated with slit-shaped focused light obliquely to the pattern on the surface to be measured, and the incident light incident on the surface of the object to be measured is vibrated; Vibrating the reflected light reflected on the surface of the object to be measured by the light irradiation, detecting the vibrated reflected light to obtain a signal corresponding to the position of the object to be measured, and averaging the detected signal. A position measurement method characterized by:
置検出素子を用いたことを特徴とする特許請求の範囲第
5項記載の位置測定方法。(6) The position measuring method according to claim 5, wherein a semiconductor device detection element using a lateral light effect is used for the light detection.
素子を用い、この圧電素子により集束光を反射して前記
被測定物表面に照射するミラーを振動させることを特徴
とする特許請求の範囲第5項記載の位置測定方法。(7) In order to vibrate the incident light, a piezoelectric element is used as a driving source, and the piezoelectric element vibrates a mirror that reflects the focused light and irradiates it onto the surface of the object to be measured. The position measuring method according to scope 5.
素子を用い、この圧電素子により前記被測定物表面から
の反射光を反射して光検出部に照射するミラーを振動さ
せることを特徴とする特許請求の範囲第5項記載の位置
測定方法。(8) In order to vibrate the reflected light, a piezoelectric element is used as a driving source, and the piezoelectric element vibrates a mirror that reflects the reflected light from the surface of the object to be measured and irradiates it onto the photodetecting section. A position measuring method according to claim 5.
用いたことを特徴とする特許請求の範囲第5項記載の位
置測定方法。(9) The position measuring method according to claim 5, characterized in that a low-pass filter is used for the averaging process.
であることを特徴とする特許請求の範囲第5項記載の位
置測定方法。(10) The position measuring method according to claim 5, wherein the vibrations of the incident light and the reflected light are in opposite phases to each other.
より前記光検出部上で反射光位置が変動しないように調
整されていることを特徴とする特許請求の範囲第5項記
載の位置測定方法。(11) The vibration amplitude of the reflected light is adjusted so that the position of the reflected light does not change on the photodetector due to the vibration of the incident light. Measuring method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60059529A JPH0820208B2 (en) | 1985-03-26 | 1985-03-26 | Position measurement method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60059529A JPH0820208B2 (en) | 1985-03-26 | 1985-03-26 | Position measurement method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61218902A true JPS61218902A (en) | 1986-09-29 |
| JPH0820208B2 JPH0820208B2 (en) | 1996-03-04 |
Family
ID=13115891
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60059529A Expired - Lifetime JPH0820208B2 (en) | 1985-03-26 | 1985-03-26 | Position measurement method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0820208B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0447210A (en) * | 1990-06-13 | 1992-02-17 | Matsushita Electric Ind Co Ltd | Height measuring apparatus by laser spot light |
| US5721077A (en) * | 1990-11-16 | 1998-02-24 | Canon Kabushiki Kaisha | Process for producing a color filter |
| CN113490831A (en) * | 2019-02-21 | 2021-10-08 | 株式会社尼康 | Surface position detection device, exposure device, substrate processing system, and device manufacturing method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56120905A (en) * | 1980-02-29 | 1981-09-22 | Anritsu Corp | Measuring device for true roundness |
| JPS56137103A (en) * | 1980-03-28 | 1981-10-26 | Sumitomo Metal Ind Ltd | Range finder |
| JPS56137102A (en) * | 1980-03-28 | 1981-10-26 | Sumitomo Metal Ind Ltd | Range finder |
| JPS59120909A (en) * | 1982-12-28 | 1984-07-12 | Fujitsu Ltd | Method for measuring thickness of resist coated film |
-
1985
- 1985-03-26 JP JP60059529A patent/JPH0820208B2/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56120905A (en) * | 1980-02-29 | 1981-09-22 | Anritsu Corp | Measuring device for true roundness |
| JPS56137103A (en) * | 1980-03-28 | 1981-10-26 | Sumitomo Metal Ind Ltd | Range finder |
| JPS56137102A (en) * | 1980-03-28 | 1981-10-26 | Sumitomo Metal Ind Ltd | Range finder |
| JPS59120909A (en) * | 1982-12-28 | 1984-07-12 | Fujitsu Ltd | Method for measuring thickness of resist coated film |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0447210A (en) * | 1990-06-13 | 1992-02-17 | Matsushita Electric Ind Co Ltd | Height measuring apparatus by laser spot light |
| US5721077A (en) * | 1990-11-16 | 1998-02-24 | Canon Kabushiki Kaisha | Process for producing a color filter |
| US5721089A (en) * | 1990-11-16 | 1998-02-24 | Canon Kabushiki Kaisha | Photosensitive material, color filter and liquid crystal device having the color filter |
| CN113490831A (en) * | 2019-02-21 | 2021-10-08 | 株式会社尼康 | Surface position detection device, exposure device, substrate processing system, and device manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0820208B2 (en) | 1996-03-04 |
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