JPS6122964A - thermal head - Google Patents
thermal headInfo
- Publication number
- JPS6122964A JPS6122964A JP59143573A JP14357384A JPS6122964A JP S6122964 A JPS6122964 A JP S6122964A JP 59143573 A JP59143573 A JP 59143573A JP 14357384 A JP14357384 A JP 14357384A JP S6122964 A JPS6122964 A JP S6122964A
- Authority
- JP
- Japan
- Prior art keywords
- film
- film metal
- thin
- thermal head
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010408 film Substances 0.000 claims abstract description 60
- 229910052751 metal Inorganic materials 0.000 claims abstract description 60
- 239000002184 metal Substances 0.000 claims abstract description 60
- 239000004020 conductor Substances 0.000 claims abstract description 50
- 239000010409 thin film Substances 0.000 claims abstract description 39
- 238000010438 heat treatment Methods 0.000 claims abstract description 28
- 239000010410 layer Substances 0.000 claims description 7
- 239000002344 surface layer Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 13
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000001590 oxidative effect Effects 0.000 abstract description 5
- 150000001875 compounds Chemical class 0.000 abstract description 2
- 230000001681 protective effect Effects 0.000 abstract description 2
- 238000007493 shaping process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 11
- 239000012212 insulator Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 150000002739 metals Chemical class 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000010893 paper waste Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 150000003482 tantalum compounds Chemical class 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
Landscapes
- Electronic Switches (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、サーマルヘッドの導体構成に関するものであ
シ、特に印字記録濃度を均一化し、発熱抵抗体あるいは
該抵抗体と接続される導体との密着がよい抵抗保s層を
有し、而も印字記録の際にサーマルヘッドに付着する記
録カスの少ない小型化したサーマルヘッドの提供を目的
としたものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a conductor configuration of a thermal head, and particularly relates to a resistance retaining material that makes the printed recording density uniform and has good contact with a heating resistor or a conductor connected to the resistor. The object of the present invention is to provide a miniaturized thermal head that has a layer and has less recording debris that adheres to the thermal head during print recording.
従来、配線基板上に複数あJCを搭載するサーマルヘッ
ドにおいては、発熱抵抗体に接続され、かつICのボン
ディング端子まで延長して形成された個別導電体をアル
ミニウムや金、銅等の薄膜材料で形成すると、例えば特
願昭58−185428にある如く、薄膜材料は結晶性
が低いために比抵抗が高く該個別導電体には抵抗体と接
する部分よシもバタン幅を狭くした導体抵抗補正領域を
設ける必要があるものであった。即ち、ボンディング端
子と発熱抵抗体間の距離が短かい個別導電体には導体抵
抗補正領域の寸法を長く形成して導体抵抗を高め、上記
距離が最も長い個別導電体の導体抵抗と値を等しくして
、サーマルヘッドの印字記録濃度を均一化する必要のあ
るものであった。Conventionally, in thermal heads in which multiple JCs are mounted on a wiring board, the individual conductors connected to the heating resistor and extending to the bonding terminals of the IC are made of a thin film material such as aluminum, gold, or copper. When formed, as described in Japanese Patent Application No. 58-185428, for example, the thin film material has low crystallinity and therefore has a high specific resistance, so that the individual conductor has a conductor resistance correction region with a narrower width than the part in contact with the resistor. It was necessary to establish a In other words, for individual conductors where the distance between the bonding terminal and the heat generating resistor is short, the conductor resistance correction area is made longer to increase the conductor resistance, and the value is made equal to the conductor resistance of the individual conductor with the longest distance. Therefore, it was necessary to equalize the print density of the thermal head.
しかし発熱抵抗体の解像度が高まシ、個別導電体のバタ
ン幅が狭くなると、導体抵抗を補正するための領域は必
然的に広くなるものであυ、従って導体抵抗補正領域を
IC搭載部側の個別導電体部にのみ設けたのでは、個別
導電体の導体抵抗を充分に補正することは出来なかった
。それ故、上記導体抵抗補正領域を発熱抵抗体をはさみ
共通電極から分岐した短冊形導電体側とIC搭載部側の
個別導電体との双方処設けることを先に提案した。However, as the resolution of the heating resistor increases and the width of the individual conductors narrows, the area for correcting the conductor resistance inevitably becomes wider. If it was provided only in the individual conductor portions, it was not possible to sufficiently correct the conductor resistance of the individual conductors. Therefore, it was previously proposed to provide the conductor resistance correction area on both sides of the rectangular conductor branching from the common electrode across the heating resistor and on the individual conductor side of the IC mounting section.
このように広い導体抵抗補正領域を具備するサーマルヘ
ッドは、従って基板の幅寸法が広くなるものであシ%製
造されるサーマルヘッドは大型化し、高価になるもので
あった。A thermal head having such a wide conductor resistance correction area therefore has a wide substrate, and thus manufactured thermal heads are large and expensive.
かくの如き欠点を除去する方法としては、例えば個別導
電体を2〜10μm程度の厚みを有する低比抵抗あるい
は低面積械抗の金、銀、銅、白金。As a method for eliminating such defects, for example, the individual conductors may be made of gold, silver, copper, or platinum having a thickness of about 2 to 10 μm and having low resistivity or low area mechanical strength.
パラジウムあるいはこれらの金属を混合させた材料等か
らなる厚膜導体あるいはメッキ導体等によって形成させ
る方法がある。There is a method of forming the conductor using a thick film conductor or a plated conductor made of palladium or a material made of a mixture of these metals.
しかし、上記金属は基本的に非酸化性金属であるか、あ
るいは形成される酸化物が母材料との密着性に欠ける金
属である0従って発熱抵抗体を含んでこれらの金構上に
付着される薄膜状の発熱抵抗体保護層は、上記金属との
密着性が悪く5発熱抵抗体を充分に機械的に保護できな
かったものである。即ち保険層としては、例えば二酸化
シリコン、窒化シリコン、炭化シリコン、五酸化タンタ
ル等の絶縁物材料がスパッタリング法、蒸着法吟によシ
基板上に付着される。これらの材料は基本的には下地材
料と酸化物を介して物理的に接着される0従って金属上
に安定な酸化物が形成されない場合には、当然その上に
付着される絶縁物は下地との密着性が悪くなる。このた
めに導体上の絶縁物は容易に金属上から剥離することに
なり、この際に生じた亀裂によって抵抗体上の絶縁物も
密着性が悪くなる。However, the metals mentioned above are basically non-oxidizing metals, or the oxides formed lack adhesion to the base material. The thin film heating resistor protective layer had poor adhesion to the metal and could not mechanically protect the heating resistor 5 sufficiently. That is, as the insurance layer, an insulating material such as silicon dioxide, silicon nitride, silicon carbide, tantalum pentoxide, etc. is deposited on the substrate by sputtering or vapor deposition. These materials are basically physically bonded to the underlying material through an oxide. Therefore, if a stable oxide is not formed on the metal, the insulating material deposited on top of it will naturally be bonded to the underlying material. adhesion becomes poor. For this reason, the insulator on the conductor easily peels off from the metal, and the cracks that occur at this time also cause poor adhesion of the insulator on the resistor.
従って上記金Diを用いるサーマルヘッドにおいては、
絶縁物としては印刷法等によ多形成される厚膜状の絶縁
物が一般に用いられ、製造プロセスの共存性から発熱抵
抗体も一般には厚膜抵抗体となる。しかし厚膜状の発熱
抵抗体は熱応答特性が悪く、高速配置印字には適しない
。それ故、薄膜状の発熱抵抗体を所望とする場合には、
前記保険層は薄膜状の絶縁物とする必要があシ、該絶縁
物はチタン、クロム、ニクロム等の酸化性金属を前記厚
膜金属上に付層・形成させた後に付着される。Therefore, in the thermal head using gold Di,
As the insulator, a thick film insulator formed by a printing method or the like is generally used, and the heating resistor is also generally a thick film resistor due to compatibility with the manufacturing process. However, thick-film heating resistors have poor thermal response characteristics and are not suitable for high-speed layout printing. Therefore, if a thin film heating resistor is desired,
The insurance layer must be a thin film of insulator, and the insulator is deposited after an oxidizing metal such as titanium, chromium, nichrome, etc. is deposited on the thick film metal.
従って、製造されるサーマルヘッドは製造工程が長くな
るために高価となる欠点があった。Therefore, the manufactured thermal head has the drawback of being expensive due to the long manufacturing process.
更にまた1発熱抵抗体によって印字記録されるべき記録
用紙が感熱紙の場合には、発色によって溶融された化学
材料は、発熱抵抗体と発熱抵抗体に接続される導体との
段差によって記録紙から剥離され、サーマルヘッドに記
録カスとして付着する特性がある。このカス量は前記段
差が大きい程多くなる。従って個別導電体として厚膜状
の導体を用い、また保@層として薄膜状の絶縁物を用い
たサーマルヘッドは記録カスが多く、印字記録品質の悪
いサーマルヘッドとなった◇
本発明の目的は上記の欠点を除去せしめたサーマルヘッ
ドを提供することにあり、印字記録濃度を均一化すると
共に発熱抵抗体あるいは導体との密着性のよい薄膜状の
抵抗保護層を有し、而も印字記録の際にサーマルヘッド
に付着する記録カスの少ない小型化した安価なサーマル
ヘッドを提供することにある。Furthermore, when the recording paper to be printed and recorded by the heat-generating resistor is thermal paper, the chemical material melted by the coloring is removed from the recording paper by the step between the heat-generating resistor and the conductor connected to the heat-generating resistor. It has the property of being peeled off and attached to the thermal head as recording debris. The amount of this waste increases as the level difference increases. Therefore, thermal heads that use thick film-like conductors as individual conductors and thin film-like insulators as the retention layer have a lot of recording debris, resulting in poor print recording quality◇ The purpose of the present invention is to The object of the present invention is to provide a thermal head which eliminates the above-mentioned drawbacks, and which has a thin film-like resistive protective layer that makes the printed recording density uniform and has good adhesion to the heating resistor or conductor, and which also has the advantage of making the printed recording uniform. It is an object of the present invention to provide a compact and inexpensive thermal head with less recording debris adhering to the thermal head.
本発明のサーマルヘッドは、実質的に導体が単一である
べき配線導体において、IC搭載部を含めた大部分の個
別半導体(および所望によシ共通電極)を厚膜状金属と
し、発熱抵抗体に接続さ扛る個別導電体と短冊形導電体
とを薄膜状金属とするものであり、従って前記厚膜状金
属と薄膜状金属とを任意の位置にて積層させ、接続する
ものであるO
以下に図面を参照して説明する0
第^図は本発明の一実施例を示した図である。In the thermal head of the present invention, most of the individual semiconductors including the IC mounting part (and the common electrode, if desired) are made of thick film metal in the wiring conductor, which should be substantially a single conductor, and the heating resistor is made of thick film metal. The individual conductors and the rectangular conductors that are connected to the body are made of thin film metal, and therefore the thick film metal and the thin film metal are laminated and connected at arbitrary positions. 0 The following description will be made with reference to the drawings. FIG. 1 is a diagram showing an embodiment of the present invention.
アルミナ、全面あるいは部分的にグレーズを施したアル
ミナ等の基板11上に5μm程度の厚みの金厚膜導体を
印刷し、800〜1000℃の温度で該導体を焼成し厚
膜金属とする。図において12は例えば共通導体とし、
13は個別導電体とする0該厚膜金属は高温度で焼成さ
れているために結晶性が高く、比抵抗は例えば2.5μ
Ω・C1rLと低い値になっている。次に基板上の所望
とする領域に、タンタル・シリコン混合物、窒化タンタ
ル、窒化ジルコニウム、クロム・シリコン等の薄膜抵抗
体14をスパッタリング法あるいは蒸着法等により01
〜0.5μmの厚みに付着させる。次に発熱抵抗体14
および厚膜金属12,13を被榎する形状にアルミニウ
ム等の薄膜金属15をスパッタリング法。A gold thick film conductor with a thickness of about 5 μm is printed on a substrate 11 made of alumina or alumina that is entirely or partially glazed, and the conductor is fired at a temperature of 800 to 1000° C. to form a thick film metal. In the figure, 12 is, for example, a common conductor,
13 is an individual conductor 0 The thick film metal has high crystallinity because it is fired at a high temperature, and the specific resistance is, for example, 2.5μ.
It has a low value of Ω・C1rL. Next, a thin film resistor 14 made of tantalum/silicon mixture, tantalum nitride, zirconium nitride, chromium/silicon, etc. is deposited on a desired area on the substrate by sputtering or vapor deposition.
Deposit to a thickness of ~0.5 μm. Next, the heating resistor 14
Then, a thin film metal 15 such as aluminum is sputtered in a shape that covers the thick film metals 12 and 13.
蒸着法等により基板上に0.5〜1μmの厚みに付着さ
せる。ここで例えば15aを短冊形導体とし、15bを
個別導電体とする。アルミニウムは一般に400℃以下
の低温度で付着されているために比抵抗は3μΩ・α以
上の高い値を示し、而も膜厚が薄いために面積抵抗値は
高い値を示す。これらの厚膜金属、薄膜抵抗体、薄膜金
属は所望により、写真蝕刻法を用いて任意の形状に形成
され、あるいは熱処理される。また発熱抵抗体14は機
械的保護を目的として例えば3〜10μm厚の二酸化シ
リコンと五酸化タンタルとの積層絶縁膜16によって被
捷・保護される。該絶縁膜16はスパッタリング法によ
り付着される。It is made to adhere to a thickness of 0.5 to 1 μm on a substrate by a vapor deposition method or the like. Here, for example, 15a is a rectangular conductor, and 15b is an individual conductor. Since aluminum is generally deposited at a low temperature of 400° C. or lower, its specific resistance exhibits a high value of 3 μΩ·α or more, and since the film is thin, its sheet resistance value exhibits a high value. These thick film metals, thin film resistors, and thin film metals are formed into arbitrary shapes by photolithography or heat treated, if desired. Further, the heating resistor 14 is covered and protected by a laminated insulating film 16 of silicon dioxide and tantalum pentoxide having a thickness of 3 to 10 μm, for example, for the purpose of mechanical protection. The insulating film 16 is deposited by sputtering.
このように本発明は、実質的には単一であるべき個別導
電体を、発熱抵抗体と接続される部分においては薄膜金
属とし、他の部分においては面積・抵抗の小さな埋膜金
綺とするものであシ、もって熱応答特性の優れた薄膜抵
抗体および薄膜状の保護膜をサーマルヘッドとして応用
するものであシ、製造されるサーマルヘッドは小型で、
均一な印字記録濃度を提供することができ、而も抵抗体
と導体との段差が小さいために記録に伴う紙カスも少な
い特徴がある。また、この方”式で製造されるサーマル
ヘッドにおいては、発熱抵抗体膜を付着させる工程と薄
膜金属を付着させる工程とが分離されているために、発
熱抵抗体膜を600℃程度の高温度で熱処理して抵抗体
膜から形成される抵抗体の安定性を改善することができ
る。In this way, the present invention makes the individual conductor, which should be substantially single, a thin film metal in the part connected to the heating resistor, and a buried metal film with small area and resistance in other parts. This is a thermal head that uses a thin film resistor with excellent thermal response characteristics and a thin protective film, and the manufactured thermal head is small.
Uniform printing density can be provided, and because the difference in level between the resistor and the conductor is small, there is little paper waste associated with recording. In addition, in the thermal head manufactured by this method, the process of attaching the heat generating resistor film and the process of attaching the thin film metal are separated, so the heat generating resistor film is heated at a high temperature of about 600°C. The stability of the resistor formed from the resistor film can be improved by heat treatment.
第2図は本発明の他の実施例を示した図である。FIG. 2 is a diagram showing another embodiment of the present invention.
図において、基板21上には厚膜金属22及び23.。In the figure, thick film metals 22 and 23 . .
が所望の形状に付着拳形成される。次に薄膜抵抗体24
と薄膜金属25とが、基板上の所望とする領域に、スパ
ッタリング法、蒸着法等によ多連続的に着膜される。し
かる後に薄膜金属及び発熱抵抗体膜は順次写真蝕刻法に
よシバタン形成され、更に基板上に絶縁性の保論膜26
が付着される0本構成のサーマルヘッドは1発熱抵抗体
膜と薄膜金属とが連続着膜されるために製造工程が短か
く安価なものとなる。また、厚膜金属と発熱抵抗体とは
、シリコン化合物、タンタル化合物等の化合物を形成す
ることができるので、発熱抵抗体膜は厚膜金域とよく密
着する0
本実施例のサーマルヘッドは、当然の升となから、第一
の実施例において記述した効果を呈することができるも
のである0
第3図は第2図に示す実施例の変形であり、厚膜金&3
2及び33を具備する基板31上に五酸化タンタル、二
酸化シリコン等の絶縁物37.37’を0,05〜0.
2μmの厚みに付着させたものであるO・次に薄膜抵抗
体34.34’及び薄膜金属35.35’をパパ 基
板上に付着させ、更に保膿膜36を付着させたものであ
る。スパッタリング法あるいは高温度での蒸着法によシ
絶縁物37.37’上に付着される抵抗体薄膜34.3
4’は、例えば特願昭47−130072にある如く、
前記絶縁物37.37’を2ンダムに多数の位置で貫通
して前記厚膜金属と多数の電気的接続点゛を有し、厚膜
金属と密着する。本構成のサーマルヘッドは、厚膜金属
と薄膜抵抗体との過度な合金形成を絶縁物37.37’
とによって防止できるので、薄膜抵抗体膜34.34’
を高温度でも熱処理できる。また金属薄膜35′を外部
端子用導体としても応用できる。The desired shape is glued to the fist and formed. Next, the thin film resistor 24
and thin film metal 25 are successively deposited on desired areas on the substrate by sputtering, vapor deposition, or the like. Thereafter, the thin metal film and the heating resistor film are sequentially formed by photolithography, and an insulating film 26 is further formed on the substrate.
In a thermal head having a zero-wire structure, one heating resistor film and a thin metal film are successively deposited, so the manufacturing process is short and inexpensive. Furthermore, since the thick film metal and the heat generating resistor can form a compound such as a silicon compound or a tantalum compound, the heat generating resistor film is in close contact with the thick film metal region. As a matter of course, it is possible to exhibit the effects described in the first embodiment.0 Figure 3 is a modification of the embodiment shown in Figure 2, in which thick film gold &3
2 and 33, an insulator 37.37' such as tantalum pentoxide or silicon dioxide is deposited at 0.05 to 0.05.
Next, a thin film resistor 34, 34' and a thin film metal 35, 35' were deposited on the substrate to a thickness of 2 μm, and a retentive film 36 was further deposited. A thin resistor film 34.3 deposited on the insulator 37.37' by sputtering or high temperature vapor deposition.
4' is, for example, as stated in Japanese Patent Application No. 47-130072,
The insulators 37 and 37' are randomly penetrated at a large number of positions to have a large number of electrical connection points with the thick film metal, and are in close contact with the thick film metal. The thermal head with this configuration prevents excessive alloy formation between the thick film metal and the thin film resistor.
The thin film resistor film 34, 34' can be prevented by
can be heat treated even at high temperatures. The metal thin film 35' can also be used as a conductor for external terminals.
このように本発明のサーマルヘッドは所望とする領域に
のみ薄膜材料を付着させることができるので生産性が高
く、面亀上記したような効果を呈することができるので
、本発明のサーマルヘッドは用途1発熱抵抗体の解像度
、入力すべき画像信号端子数、単一のICが駆動できる
発熱抵抗体数。As described above, the thermal head of the present invention is capable of attaching thin film material only to the desired area, resulting in high productivity and can exhibit the above-mentioned effects. 1 Resolution of heating resistor, number of image signal terminals to be input, number of heating resistors that can be driven by a single IC.
ICの搭載・接続方法等等は特に限定されるべきものは
なく、本発明のサーマルヘッドはラインプリンタ、シリ
アルヘッド等に応用することができる0また、厚膜金属
のマイグレーションを防止するために、厚膜金属導体部
を絶縁物質でバッジベージ、ンすることもできる0更に
また。許容できる領域内において導体抵抗補正領域を個
別導電体に設けることは当然できるものである0また基
板の裏面を共通導体あるいは接地導体としても利用でき
る。本発明のすTマルへ、ドにおいては、当然のことな
がら材料や製法及び膜厚等は限定されるべきものではな
いことは論を持たない。従って薄膜の付着方法としては
、マグネトロン・スバ。There are no particular limitations on the method of mounting and connecting ICs, etc., and the thermal head of the present invention can be applied to line printers, serial heads, etc. In addition, in order to prevent migration of thick film metal, Furthermore, thick film metal conductors can also be bonded with insulating materials. It is of course possible to provide a conductor resistance correction area for each individual conductor within an allowable area, and the back surface of the substrate can also be used as a common conductor or a ground conductor. It goes without saying that materials, manufacturing methods, film thicknesses, etc., should not be limited in the T and C portions of the present invention. Therefore, magnetron suba is the best method for attaching thin films.
タリング法、直流スパッタリング法、高周波スバ、クリ
ング法等を用いることができ、また活性ガスを導入した
雰囲気中において活性スパッタリング、活性蒸着するこ
ともできる◎また本発明は、非酸化性薄絶金糾上に酸化
性薄膜金属を付着させて実施することもできる。◎The present invention also provides a non-oxidizing thin insulating film. It can also be carried out by depositing an oxidizable thin film metal on top.
第1図〜第3図は、本発明のサーマルヘッドの断面模式
図をボしたものである。
11.21,31:基板、12.22.31(共通電極
用)厚膜金属、13,23,33:(個別導電体用)厚
膜金属、14,24,34,34’:薄膜抵抗体、15
a、15b、25,35 :薄膜金属、16,26゜3
6:保諌層% 37.37’:絶縁層。1 to 3 are schematic cross-sectional views of the thermal head of the present invention. 11.21, 31: Substrate, 12.22.31 (For common electrode) Thick film metal, 13, 23, 33: (For individual conductor) Thick film metal, 14, 24, 34, 34': Thin film resistor , 15
a, 15b, 25, 35: thin film metal, 16, 26°3
6: Insulating layer% 37.37': Insulating layer.
Claims (4)
体の一端に接続され、かつ該抵抗体の他端からICへの
接続端子にまで延長して形成される実質的に単一である
べき個別導電体を具備するサーマルヘッドにおいて、前
記発熱抵抗体に接続される領域の個別導電体を少くとも
表面層が酸化性である薄膜金属によって形成し、他の領
域を厚膜金属で形成し、而も前記薄膜金属と抵抗体とを
薄膜状の絶縁膜によって保護したことを特徴とするサー
マルヘッド。(1) A substantially single unit formed by branching into a rectangular shape from a common electrode, connected to one end of a thin film heating resistor, and extending from the other end of the resistor to a connection terminal to an IC. In the thermal head, the individual conductors in the region connected to the heating resistor are formed of a thin film metal whose surface layer is oxidizable, and the other regions are formed of a thick film metal. 1. A thermal head characterized in that the thin film metal and the resistor are protected by a thin insulating film.
において、前記薄膜金属を厚膜金属に直接積層させて、
厚膜金属と薄膜金属とを電気的に接続させることを特徴
とするサーマルヘッド。(2) In the thermal head according to claim (1), the thin film metal is directly laminated on the thick film metal,
A thermal head characterized by electrically connecting thick film metal and thin film metal.
において、前記薄膜金属を厚膜金属上に付着された発熱
抵抗体を介して厚膜金属と電気的に接続させることを特
徴とするサーマルヘッド。(3) The thermal head according to claim (1), characterized in that the thin film metal is electrically connected to the thick film metal via a heating resistor attached to the thick film metal. thermal head.
において、前記薄膜金属を厚膜金属上に付着された絶縁
層(及び発熱抵抗体)を介して厚膜金属と電気的に接続
させることを特徴とするサーマルヘッド。(4) In the thermal head according to claim (1), the thin film metal is electrically connected to the thick film metal via an insulating layer (and heating resistor) deposited on the thick film metal. A thermal head characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59143573A JPS6122964A (en) | 1984-07-11 | 1984-07-11 | thermal head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59143573A JPS6122964A (en) | 1984-07-11 | 1984-07-11 | thermal head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6122964A true JPS6122964A (en) | 1986-01-31 |
Family
ID=15341883
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59143573A Pending JPS6122964A (en) | 1984-07-11 | 1984-07-11 | thermal head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6122964A (en) |
-
1984
- 1984-07-11 JP JP59143573A patent/JPS6122964A/en active Pending
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