JPS6124831B2 - - Google Patents
Info
- Publication number
- JPS6124831B2 JPS6124831B2 JP52078155A JP7815577A JPS6124831B2 JP S6124831 B2 JPS6124831 B2 JP S6124831B2 JP 52078155 A JP52078155 A JP 52078155A JP 7815577 A JP7815577 A JP 7815577A JP S6124831 B2 JPS6124831 B2 JP S6124831B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- receiving element
- light
- cdte
- znte
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
Landscapes
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
【発明の詳細な説明】
本発明は受光素子にかかり、特に可視光に対し
て感度のよい受光素子を提供しようとするもので
ある。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a light receiving element, and an object of the present invention is to provide a light receiving element that is particularly sensitive to visible light.
受光素子としては、これまで、シリコン単結晶
を用いた、フオトトランジスタやフオトダイオー
ドが、広く使用されている。フオトダイオードを
例に説明すると、その多くは１個の基体単結晶上
にいくつかのpn接合をもつ構造となつている。
すなわち、大きなシリコン単結晶板の表面全体に
pn接合を形成してから、感光面側にpn接合に達
する溝を切つて、個々のダイオードに分離したも
のである。この溝切りによつて、感光面は細分化
されているが、基体の部分は一体となつたままで
ある。そして、分離された感光部分のそれぞれに
電極が付与され、さらに電極それぞれに導線など
が接続されている。このように、基板としてシリ
コン単結晶を使用しているので、素子の形状や面
積が限られてしまうだけでなく、高価なものとな
つている。あるいは、小さなフオトダイオードを
多数個、一つの基板上に植えつけた構造の、受光
素子もある。これは、上述の素子に比べてさらに
製造工程が複雑になるばかりでなく、素子の形
状、面積に制約があり、高価なものとなつてい
る。 Phototransistors and photodiodes using silicon single crystals have been widely used as light-receiving elements. Taking photodiodes as an example, most of them have a structure with several pn junctions on one single crystal substrate.
In other words, the entire surface of a large silicon single crystal plate is
After forming a pn junction, a groove was cut on the photosensitive surface side to reach the pn junction, and the diodes were separated into individual diodes. This grooving subdivides the photosensitive surface, but portions of the substrate remain integral. An electrode is provided to each of the separated photosensitive parts, and a conducting wire or the like is connected to each electrode. As described above, since a silicon single crystal is used as a substrate, not only the shape and area of the element are limited, but also the element is expensive. Alternatively, there is also a light-receiving element that has a structure in which many small photodiodes are planted on a single substrate. This not only requires a more complicated manufacturing process than the above-mentioned elements, but also has restrictions on the shape and area of the element, making it expensive.
さらに、シリコンの禁止帯巾は1.1eVであり、
その限界波長が約1100nｍと赤外領域に属してい
る。そのため、可視光に対して感度はあまりよく
ない。したがつて、それを光電装置として使用す
る場合には、光源に白熱電極を用いなければなら
ない。よく知られているように、白熱電球の光線
には赤外線が多量に含まれているので、使用時、
装置の温度が上昇しやすく、冷却装置を必要とす
る場合が多かつた。 Furthermore, the bandgap of silicon is 1.1eV,
Its limit wavelength is approximately 1100 nm, which belongs to the infrared region. Therefore, the sensitivity to visible light is not very good. Therefore, when using it as a photoelectric device, an incandescent electrode must be used as the light source. As is well known, the light beam from an incandescent bulb contains a large amount of infrared rays, so when used,
The temperature of the equipment was likely to rise, often requiring a cooling device.
本発明は、上述したような問題点のない受光素
子を実現したものである。その特徴とするところ
は、受光素子の基本として、CdTe、もしくは
ZnTe、またはこれらの少なくともいずれか一方
を含む半導体を使用し、前記基体の表面部分に前
記基体よりも禁止帯巾の大きい−族半導体を
設け、前記基体が電気的に絶縁された複数個の領
域で構成されていることにある。 The present invention realizes a light receiving element that does not have the above-mentioned problems. The feature is that the basic light receiving element is CdTe or
ZnTe or a semiconductor containing at least one of these is used, a - group semiconductor having a forbidden band width larger than that of the base is provided on the surface portion of the base, and the base has a plurality of electrically insulated regions. The reason is that it is made up of.
これによれば、分光感度が視感度曲線に非常に
近似しており、可視光に対して感度がよい。その
ため、これを光電装置として使用する場合には、
光源として自然光または昼光色の螢光灯を使用す
ることができる。これら螢光灯から放射される赤
外線量は非常に少なく、使用時に、装置を冷却し
てやる必要はない。さらに、これは応答速度が速
いので、高速度読取素子などにも使用することが
できる。なお、多結晶膜を基体として使用すれ
ば、受光素子としての形状、面積の制約が非常に
少なくなる。 According to this, the spectral sensitivity is very close to the visibility curve, and the sensitivity to visible light is good. Therefore, when using this as a photoelectric device,
Natural light or daylight fluorescent lamps can be used as the light source. The amount of infrared radiation emitted by these fluorescent lamps is very small, and there is no need to cool the device during use. Furthermore, since this has a fast response speed, it can also be used for high-speed reading elements. Note that if a polycrystalline film is used as the base, there are significantly fewer restrictions on the shape and area of the light receiving element.
以下、本発明について、実施例をあげて具体的
に説明する。 Hereinafter, the present invention will be specifically explained by giving Examples.
実施例 １
第１図に、本発明の第１の実施例における受光
素子の断面構造を示す。図において、１はガラス
基板、２は−族化合物であるCdS焼結膜、３
は基体としてのCdTe焼結膜、４はCu2Te層、５
はIn−Ga電極、６はAg電極、７，８はリード線
である。Example 1 FIG. 1 shows a cross-sectional structure of a light receiving element in a first example of the present invention. In the figure, 1 is a glass substrate, 2 is a CdS sintered film which is a - group compound, and 3 is a glass substrate.
4 is a CdTe sintered film as a substrate, 4 is a Cu 2 Te layer, and 5 is a CdTe sintered film as a substrate.
6 is an In-Ga electrode, 6 is an Ag electrode, and 7 and 8 are lead wires.
この受光素子は次のように製造した。 This light receiving element was manufactured as follows.
市販のCdS粉末に、それとの合計量に対して５
重量％のCdCl2と、適量の有機バインダーを加え
て、混合し、CdSペーストを作つた。これを、
325メツシユのステンレススチール製のスクリー
ンを用いて、ガラス基板１上に印刷した。それか
ら、窒素中において、650℃で焼成して、ガラス
基板上にCdS焼結膜２を形成した。このCdS焼結
膜２は窓材として重要な役割をもつものである。
CdS焼結膜２上に、CdTe粉末に有機バインダー
を加えてペースト状としたものを、上述と同様に
して、選択的に、スクリーン印刷した。それか
ら、窒素中において、700℃で焼成して、基体で
あるCdTe焼結膜３を形成した。 5 to commercially available CdS powder and the total amount of it.
Weight percent CdCl 2 and an appropriate amount of organic binder were added and mixed to make a CdS paste. this,
Printing was performed on the glass substrate 1 using a 325 mesh stainless steel screen. Then, it was fired at 650° C. in nitrogen to form a CdS sintered film 2 on the glass substrate. This CdS sintered film 2 plays an important role as a window material.
A paste obtained by adding an organic binder to CdTe powder was selectively screen printed on the CdS sintered film 2 in the same manner as described above. Then, it was fired at 700° C. in nitrogen to form a CdTe sintered film 3 as a base.
ここで、CdTe焼結膜３とCdS焼結膜２の禁止
帯巾の関係は、CdS焼結膜２の禁止帯巾
（2.4eV）の方がCdTe焼結膜３の禁止帯巾
（1.5eV）よりも大きい。 Here, regarding the relationship between the forbidden widths of the CdTe sintered film 3 and the CdS sintered film 2, the forbidden width of the CdS sintered film 2 (2.4 eV) is larger than the forbidden width of the CdTe sintered film 3 (1.5 eV). .
次に、前記素子をCuClの熱水溶液中に、短時
間浸漬して、CdTe焼結膜３の表面にCu2Te層４
を形成した。そして、200℃で10分間熱処理をし
た。熱処理後、CdS焼結膜２上にIn−Ga電極５
を、またCu2Te層４上にAg電極６をそれぞれ付
与し、さらに各電極にリード線７，８を接続し
た。 Next, the element is immersed in a hot aqueous solution of CuCl for a short time to form a Cu 2 Te layer 4 on the surface of the CdTe sintered film 3.
was formed. Then, heat treatment was performed at 200°C for 10 minutes. After heat treatment, an In-Ga electrode 5 is placed on the CdS sintered film 2.
Further, Ag electrodes 6 were applied on the Cu 2 Te layer 4, and lead wires 7 and 8 were connected to each electrode.
このようにして製造した第１図の受光素子にお
いて光は、ガラス基板１側より照射する。この素
子の分光感度特性を第２図に示す。図から明らか
なように、520〜850nｍの波長域で高い感度を示
す。 In the light-receiving element shown in FIG. 1 manufactured in this way, light is irradiated from the glass substrate 1 side. The spectral sensitivity characteristics of this device are shown in FIG. As is clear from the figure, it exhibits high sensitivity in the wavelength range of 520 to 850 nm.
第１図においてみられるようには、基体として
のCdTe焼結膜はセル状に独立させて作つてあ
り、電気的に互いに絶縁されている。各セル状の
素子間において、特性のばらつきが小さく、温度
変化などに関して均一性のあるものであつた。各
セル状素子の有効面積を２mm2とし、タングステン
ランプ（2854〓）を用いて1000ルクスとしたと
き、各セル状素子の開放電圧は0.6Vであり、短
絡電流は10μＡであつた。そして、照度と光電流
とが直線的な関係にある範囲は、１〜30000ルク
スであつた。 As seen in FIG. 1, the CdTe sintered film serving as the base is formed into independent cells and electrically insulated from each other. There was little variation in characteristics among the cell-shaped elements, and there was uniformity with respect to temperature changes and the like. When the effective area of each cellular element was 2 mm 2 and a tungsten lamp (2854〓) was used at 1000 lux, the open circuit voltage of each cellular element was 0.6 V and the short circuit current was 10 μA. The range in which illuminance and photocurrent had a linear relationship was 1 to 30,000 lux.
実施例 ２
第３図に、本発明の第２の実施例の受光素子の
断面構造を示す。図において、１１はガラス基
板、１２は−族半導体であるｎ型ZnSe膜、
１３は基体としてのCdTe−ZnTe混晶膜、１４は
Sb2Te3膜、１５，１６はオーミツク電極、１
７，１８はリード線である。Example 2 FIG. 3 shows a cross-sectional structure of a light receiving element according to a second example of the present invention. In the figure, 11 is a glass substrate, 12 is an n-type ZnSe film which is a - group semiconductor,
13 is a CdTe-ZnTe mixed crystal film as a substrate, 14 is a
Sb 2 Te 3 film, 15 and 16 are ohmic electrodes, 1
7 and 18 are lead wires.
この受光素子は次のように製造した。 This light receiving element was manufactured as follows.
すなわちガラス基板１１上に、真空蒸着法で、
ｎ型ZnSe膜１２を選択的に形成した。このZnSe
膜１２上に、このZnSe膜１２より禁止帯巾が小
さいCdTe−ZnTe混晶膜１３を蒸着法で形成して
から、さらにその上にアクセプタ源である
Sb2Te3膜１４を蒸着法で形成した。それから不
活性雰囲気中において、400〜500℃の範囲内の温
度で、熱処理を施した。熱処理後、ZnSe膜１２
とSb2Te3膜１４のそれぞれにオーミツク電極１
５，１６を付与してから、各電極にリード線１
７，１８を接続した。 That is, on the glass substrate 11, by vacuum evaporation method,
An n-type ZnSe film 12 was selectively formed. This ZnSe
A CdTe-ZnTe mixed crystal film 13 having a smaller forbidden band width than this ZnSe film 12 is formed on the film 12 by vapor deposition, and then an acceptor source film 13 is formed on the film 12 by vapor deposition.
The Sb 2 Te 3 film 14 was formed by a vapor deposition method. A heat treatment was then carried out in an inert atmosphere at a temperature within the range of 400-500°C. After heat treatment, ZnSe film 12
and Sb 2 Te 3 film 14 respectively.
5 and 16, and then attach lead wire 1 to each electrode.
7 and 18 were connected.
このようにして製造した受光素子において、光
は、ガラス基板１１より照射する。この受光素子
においても、セル状の素子間の特性のばらつきは
小さく、温度変化などが均一である。そして、応
答性もよい。 In the light receiving element manufactured in this way, light is irradiated from the glass substrate 11. In this light-receiving element as well, variations in characteristics between the cellular elements are small and temperature changes are uniform. And the responsiveness is also good.
第４図に、CdTeとZnTeの混晶の比率が、モル
比で75：25のときの、分光感度特性を示す。これ
から明らかなように、470〜760nｍの波長域にお
いて、高い感度を示している。 Figure 4 shows the spectral sensitivity characteristics when the molar ratio of CdTe and ZnTe mixed crystals is 75:25. As is clear from this, high sensitivity is shown in the wavelength range of 470 to 760 nm.
各セル状の素子の有効面積を15mm2とし、タング
ステンランプ（2854〓）を用いて1000ルクスとし
たとき、それぞれの開放電圧は0.55Vであり、短
絡電流は７μＡであつた。照度と光電流とが直接
的な関係にある範囲は、１〜30000ルクスであつ
た。 When the effective area of each cell-shaped element was 15 mm 2 and a tungsten lamp (2854〓) was used to generate 1000 lux, the open circuit voltage of each element was 0.55 V and the short circuit current was 7 μA. The range in which there was a direct relationship between illuminance and photocurrent was 1 to 30,000 lux.
実施例 ３
第５図に、本発明の第３の実施例の受光素子の
断面構造を示す。図において、３１はガラス基
板、３２はIn2O3膜、３３はZnS−CdS混晶膜、
３４は基体としてのCdTe−ZnTe混晶膜、３５は
Cu2Te膜、３６，３７はオーミツク電極、３８，
３９はリード線である。Embodiment 3 FIG. 5 shows a cross-sectional structure of a light receiving element according to a third embodiment of the present invention. In the figure, 31 is a glass substrate, 32 is an In 2 O 3 film, 33 is a ZnS-CdS mixed crystal film,
34 is a CdTe-ZnTe mixed crystal film as a substrate, and 35 is a CdTe-ZnTe mixed crystal film as a base.
Cu 2 Te film, 36, 37 are ohmic electrodes, 38,
39 is a lead wire.
この受光素子は次のように製造した。 This light receiving element was manufactured as follows.
まず、ガラス基板３１上に、広く実施されてい
る方法で、In2O3膜３２を形成した。一方、６重
量％のCuCl2を含む、ZnSとCdSとがモル比で
30：70の混晶粉末に、適量の有機バインダーを加
えて、ペースト状にした。このペーストを、325
メツシユのステンレススチール製のスクリーンを
使用して、In2O3膜３２上に、選択的に印刷し
た。それから、窒素雰囲気中において、680℃で
焼成して、ZnS−CdS混晶膜３３を形成した。こ
の混晶膜３３上にさらに禁止帯巾が蒸着法により
ZnS−CdS混晶膜３３より小さいCdTe−ZnTe混
晶膜３４とCu2Te膜３５を順次形成してから、不
活性雰囲気中において、200〜250℃の範囲内の温
度で熱処理した。次に、ZnS−CdS混晶膜３３上
と、Cu2Te膜３５上に、それぞれオーミツク電極
３６，３７を付与してから、それにリード線３
８，３９を接続した。 First, an In 2 O 3 film 32 was formed on a glass substrate 31 by a widely used method. On the other hand, the molar ratio of ZnS and CdS containing 6% by weight of CuCl 2
An appropriate amount of organic binder was added to a 30:70 mixed crystal powder to form a paste. Add this paste to 325
A mesh stainless steel screen was used to selectively print onto the In 2 O 3 membrane 32. Then, it was fired at 680°C in a nitrogen atmosphere to form a ZnS-CdS mixed crystal film 33. A forbidden band is further formed on this mixed crystal film 33 by vapor deposition.
After sequentially forming a CdTe-ZnTe mixed crystal film 34 smaller than the ZnS-CdS mixed crystal film 33 and a Cu 2 Te film 35, heat treatment was performed in an inert atmosphere at a temperature within the range of 200 to 250°C. Next, ohmic electrodes 36 and 37 are provided on the ZnS-CdS mixed crystal film 33 and the Cu 2 Te film 35, respectively, and then lead wires 3 are connected thereto.
8,39 were connected.
このようにして製造した受光素子において、光
は、ガラス基板３１側から照射する。この受光素
子においても、セル状の素子間の特性のばらつき
は小さく、かつ温度変化なども均一性のあるもの
であつた。そして、応答性もよい。 In the light receiving element manufactured in this way, light is irradiated from the glass substrate 31 side. In this light-receiving element as well, variations in characteristics between the cellular elements were small, and temperature changes were also uniform. And the responsiveness is also good.
第６図に、CdTeとZnTeとの混晶がモル比で
75：25のときの、分光感度特性を示す。図から明
らかなように、440〜760nｍの波長域において、
高い感度を示した。各セル状素子の有効面積を
1.2mm2とし、タングステンランプ（2854〓）を用
いて1000ルクスとしたとき、それぞれの開放電圧
は0.65Vであり、短絡電流は６μＡであつた。照
度と光電流とが直線的な関係にある範囲は、１〜
30000ルクスであつた。 Figure 6 shows the molar ratio of mixed crystals of CdTe and ZnTe.
Shows the spectral sensitivity characteristics when the ratio is 75:25. As is clear from the figure, in the wavelength range of 440 to 760 nm,
It showed high sensitivity. The effective area of each cellular element is
1.2 mm 2 and 1000 lux using a tungsten lamp (2854〓), each open circuit voltage was 0.65 V and short circuit current was 6 μA. The range in which illuminance and photocurrent have a linear relationship is 1 to
It was 30,000 lux.
なお、上記実施例１、２、３において上記実施
例の形態の素子の全体または一部を保護用の樹脂
で被覆してやることが望ましい。 In Examples 1, 2, and 3, it is desirable to cover the entire or part of the element of the embodiment with a protective resin.
以上の実施例から明らかなように、本発明にか
かる受光素子は、シリコン単結晶を利用した素子
においてみられるような制約がなく、また安価な
ものである。 As is clear from the above embodiments, the light-receiving element according to the present invention does not have the limitations found in elements using silicon single crystal, and is inexpensive.
第１図は本発明にかかる受光素子の一実施例の
断面図、第２図はその分光感度特性を示す図であ
る。第３図は同じく他の実施例の断面図、第４図
はその分光感度特性を示す図である。第５図は同
じくさらに他の実施例の断面図、第６図はその分
光感度特性を示す図である。
１……ガラス基板、２……CdS焼結膜（−
族半導体）、３……CdTe焼結膜（基体）、４……
Cu2Te層、５，６……オーミツク電極、７，８…
…リード線、１１……ガラス基板、１２……
ZnSe膜（−族半導体）、１３……CdTe−
ZnTe混晶膜（基体）、１４……Sb2Te3膜、１
５，１６……オーミツク電極、１７，１８……リ
ード線、３１……ガラス基板、３２……In2O3
膜、３３……ZnS−CdS混晶膜、３４……CdTe
−ZnTe混晶膜、３５……Cu2Te膜、３６，３７
……オーミツク電極、３８，３９……リード線。
FIG. 1 is a sectional view of an embodiment of a light receiving element according to the present invention, and FIG. 2 is a diagram showing its spectral sensitivity characteristics. FIG. 3 is a sectional view of another embodiment, and FIG. 4 is a diagram showing its spectral sensitivity characteristics. FIG. 5 is a sectional view of still another embodiment, and FIG. 6 is a diagram showing its spectral sensitivity characteristics. 1...Glass substrate, 2...CdS sintered film (-
group semiconductor), 3...CdTe sintered film (substrate), 4...
Cu 2 Te layer, 5, 6...ohmic electrode, 7, 8...
...Lead wire, 11...Glass substrate, 12...
ZnSe film (- group semiconductor), 13...CdTe-
ZnTe mixed crystal film (substrate), 14...Sb 2 Te 3 film, 1
5, 16... Ohmic electrode, 17, 18... Lead wire, 31... Glass substrate, 32... In 2 O 3
Film, 33...ZnS-CdS mixed crystal film, 34...CdTe
−ZnTe mixed crystal film, 35...Cu 2 Te film, 36, 37
...ohmic electrode, 38, 39...lead wire.
Claims (1)
くともいずれか一方を含む半導体を基体とし、前
記基体の表面部分に前記基体よりも禁止帯巾の大
きい−族半導体を有し、前記基体の内部また
は表面部分に光発電機構を有してなる受光素子で
あつて、少なくとも前記基体が電気的に絶縁され
た複数個の領域で構成されていることを特徴とす
る受光素子。 ２ 基体がCdTe、もしくはZnTe、またはこれら
の少なくともいずれか一方を含む半導体の多結晶
膜であることを特徴とする特許請求の範囲第１項
に記載の受光素子。 ３ −族半導体が多結晶膜で構成されている
ことを特徴とする特許請求の範囲第１項または第
２項に記載の受光素子。 ４ −族半導体が複数個の基体の表面部分に
共有して設置されていることを特徴とする特許請
求の範囲第１項、第２項または第３項に記載の受
光素子。[Scope of Claims] 1 A semiconductor comprising CdTe, ZnTe, or at least one of these as a base, a - group semiconductor having a larger forbidden band width than the base on a surface portion of the base, 1. A light-receiving element having a photovoltaic mechanism inside or on a surface thereof, the light-receiving element comprising at least a plurality of electrically insulated regions. 2. The light-receiving element according to claim 1, wherein the substrate is a polycrystalline semiconductor film containing CdTe, ZnTe, or at least one of these. 3. The light-receiving element according to claim 1 or 2, wherein the group 3- semiconductor is made of a polycrystalline film. 4. The light-receiving element according to claim 1, 2, or 3, wherein the group 4-semiconductor is shared on the surface portions of a plurality of substrates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7815577A JPS5412580A (en) | 1977-06-29 | 1977-06-29 | Photo detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7815577A JPS5412580A (en) | 1977-06-29 | 1977-06-29 | Photo detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5412580A JPS5412580A (en) | 1979-01-30 |
| JPS6124831B2 true JPS6124831B2 (en) | 1986-06-12 |
Family
ID=13654015
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7815577A Granted JPS5412580A (en) | 1977-06-29 | 1977-06-29 | Photo detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5412580A (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56142683A (en) * | 1980-04-09 | 1981-11-07 | Ricoh Co Ltd | Photoelectric converter |
| JPS5759510Y2 (en) * | 1980-04-23 | 1982-12-18 | ||
| JPS56155577A (en) * | 1980-05-06 | 1981-12-01 | Ricoh Co Ltd | Photoelectric transducer |
| JPS5715716U (en) * | 1980-07-01 | 1982-01-27 | ||
| JPS5933282Y2 (en) * | 1980-08-15 | 1984-09-17 | 松下電器産業株式会社 | pressure regulating valve |
| JPS5754377A (en) * | 1980-09-18 | 1982-03-31 | Canon Inc | Photoelectric converting element |
| JPS60180161A (en) * | 1984-02-27 | 1985-09-13 | Matsushita Electric Ind Co Ltd | optical sensor array |
| JPH0590623A (en) * | 1991-09-28 | 1993-04-09 | Nissha Printing Co Ltd | Transfer material for solar battery |
-
1977
- 1977-06-29 JP JP7815577A patent/JPS5412580A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5412580A (en) | 1979-01-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3508126A (en) | Semiconductor photodiode with p-n junction spaced from heterojunction | |
| Tani et al. | Phototransport effects in polyacetylene,(CH) x | |
| Ennen et al. | 1.54‐μm electroluminescence of erbium‐doped silicon grown by molecular beam epitaxy | |
| US4132999A (en) | Semiconductor devices | |
| US4231808A (en) | Thin film photovoltaic cell and a method of manufacturing the same | |
| US2765385A (en) | Sintered photoconducting layers | |
| US2820841A (en) | Photovoltaic cells and methods of fabricating same | |
| US4016586A (en) | Photovoltaic heterojunction device employing a wide bandgap material as an active layer | |
| JPS6252478B2 (en) | ||
| GB1529139A (en) | Photovoltaic cell and a method of manufacturing such a cell | |
| JP6657427B2 (en) | Ag-doped photovoltaic device and fabrication method | |
| GB1576495A (en) | Photovoltaic cells | |
| US4079405A (en) | Semiconductor photodetector | |
| US3502884A (en) | Method and apparatus for detecting light by capacitance change using semiconductor material with depletion layer | |
| JPS6124831B2 (en) | ||
| US8124871B2 (en) | Solar cell and its transparent light conversion film | |
| CA1080837A (en) | Optically transmissive screening electrode | |
| US3755002A (en) | Method of making photoconductive film | |
| US6362483B1 (en) | Visible-blind UV detectors | |
| US4005468A (en) | Semiconductor photoelectric device with plural tin oxide heterojunctions and common electrical connection | |
| US3952323A (en) | Semiconductor photoelectric device | |
| US4024558A (en) | Photovoltaic heterojunction device employing a glassy amorphous material as an active layer | |
| US3922579A (en) | Photoconductive target | |
| Sarmah et al. | Effect of substrate temperature on photoconductivity in CdTe thin films | |
| US3092725A (en) | Blocking-layer photo-electric cell |