JPS612593A - Optical information-recording member - Google Patents
Optical information-recording memberInfo
- Publication number
- JPS612593A JPS612593A JP59123002A JP12300284A JPS612593A JP S612593 A JPS612593 A JP S612593A JP 59123002 A JP59123002 A JP 59123002A JP 12300284 A JP12300284 A JP 12300284A JP S612593 A JPS612593 A JP S612593A
- Authority
- JP
- Japan
- Prior art keywords
- recording
- thin film
- irradiation
- sensitivity
- optical information
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明はレーザ光線を用いて情報信号を高密度かつ高速
に記録再生し、かつ情報の書き換えが可能な光学情報記
録部材に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to an optical information recording member that uses a laser beam to record and reproduce information signals at high density and high speed, and that allows information to be rewritten.
従来例の構成とその問題点
レーザ光線を利用して高密度な情報の記録再生を行なう
技術は既に公知であシ現在文書ファイルシステム、静止
画ファイルシステム等への応用力さかんに行なわれてい
る。また書き換え可能なタイプの記録システムについて
も研究開発の事例が報告されつつある。Conventional configurations and their problems The technology for recording and reproducing high-density information using laser beams is already well known and is currently being actively applied to document file systems, still image file systems, etc. . In addition, research and development cases are being reported regarding rewritable recording systems.
レーザ光線を用いて記録薄膜の光学的性質、例えば屈折
率、消衰係数等を可逆的に増減させることで情報を繰シ
返し記録消去する記録媒体については例えば特公昭47
−26897に見られるT @ 51Gfil 1sS
b2S 2のように酸素以外のカルコゲン元素をベー
スとするアモルファス薄膜が知られていたが湿気に対し
て弱いという問題があシ実用化には至っていなかった。Regarding recording media in which information is repeatedly recorded and erased by reversibly increasing and decreasing the optical properties of the recording thin film, such as refractive index and extinction coefficient, using a laser beam, for example, Japanese Patent Publication No. 47
T @ 51Gfil 1sS found in -26897
Amorphous thin films based on chalcogen elements other than oxygen, such as b2S2, have been known, but they have not been put into practical use due to the problem of being sensitive to moisture.
この耐湿性を改良したものにTeとOをベースとする酸
化物系の薄膜がある。An oxide thin film based on Te and O has improved moisture resistance.
これらは比較的強くて短いパルス光を照射して照射部を
昇温状態から急冷してその光学定数を減少させ、比較的
弱くて長いパルス光を照射して光学定数を増大させるこ
とで記録消去を行なうというもので、記録時には一般に
光学定数を減少させる方向、消去時には増大する方向を
利用しようというものである。These erase records by irradiating relatively strong and short pulsed light to rapidly cool the irradiated area from a heated state to decrease its optical constant, and by irradiating relatively weak and long pulsed light to increase the optical constant. The idea is to generally use the direction in which the optical constant decreases during recording and the direction in which it increases during erasing.
従来記録材料として用いられてきたTe −Tea2系
薄膜は例えばアモルファス状態のTeO2マトリックス
中にToの小粒子(〜20人)が散在した状態、あるい
はTeとTeO2とが例えばX線回析ではピークが検出
されない程度のアモルファスに近い状態で混ざシ合った
ものと考えられるが、いずれにせよ光の照射によってそ
の構造を大きく変化し情報信号の記録に寄与するのはT
e粒子である。従って、このTe粒子に適当な物質を化
合させることでToの可逆的構造変化に8習な熱的条件
を制御し、例えばレーザ光線等での記録消去に要する照
射パワー、照射時間をある程度操作することは可能であ
る。The Te-Tea2 thin film conventionally used as a recording material has, for example, a state in which small To particles (~20 particles) are scattered in an amorphous TeO2 matrix, or a state in which Te and TeO2 have no peak in X-ray diffraction. It is thought that T is mixed in an almost amorphous state that cannot be detected, but in any case, it is T that changes its structure significantly upon irradiation with light and contributes to the recording of information signals.
e particles. Therefore, by combining these Te particles with an appropriate substance, the thermal conditions necessary for the reversible structural change of To can be controlled, and the irradiation power and irradiation time required for erasing records with a laser beam, etc., can be controlled to some extent. It is possible.
例えば特開昭55−28530には、Se、Sによって
T e −T eo2系薄膜の構造変化の可逆性を高め
る方法、特願昭58−58158には、金属、半金属の
中でも特にSn 、Ge 、 In 、 Sb 、 B
i等の元素の添加によって、やけ#)To TeO2
系薄膜の構造可逆性を高め、同時に膜の安定性、製造時
の再現性をも高める方法についての提案がある。その後
の詳しい研究によって、この中で例えばGeを添加する
とTe粒子径の増大、秩序の回復に要するエネルギーが
急激に増加し微量でもその記録信号ビットの熱的安定性
を制御することができること、(1983,第30回応
用物理学関係連合講演会予稿集P87〜)、またSnは
その半金属的性質によって記録時にはレーザ光線の照射
による溶融状態から固化する際、 ’reと結合してそ
の粒径成長を抑制する効果とともに逆に消去時には結晶
性回復の核として働くという効果を合わせもちその添加
濃度を選ぶことで記録感度、消去感度を制御することが
できること等が明らかになり、Ge 、 Snとを同時
に添加した記録薄膜を用いて光ディスクが試作された(
1983JAPAN DISPLAY予稿集P46〜
)。このディスクは実時間で同時に記録消去することが
可能でオシ、かつ記録信号ビットも安定という優れた特
性を有していたが感度面、特に消去感度が十分ではなく
、例えば現在の半導体レーザでは能力限界の上限であシ
、更なる感度向上が必要となっていた。For example, Japanese Patent Application Laid-Open No. 55-28530 describes a method for increasing the reversibility of structural changes in Te-Teo2 thin films using Se and S, and Japanese Patent Application No. 58-58158 describes a method for increasing the reversibility of structural changes in Te-Teo2 thin films using Se and S. , In, Sb, B
Due to the addition of elements such as i, burnt #)To TeO2
There have been proposals for methods to increase the structural reversibility of thin films, and at the same time to improve film stability and reproducibility during manufacturing. Subsequent detailed research revealed that, for example, when Ge is added, the Te particle size increases and the energy required to restore order increases rapidly, making it possible to control the thermal stability of recorded signal bits even in small amounts ( (1983, Proceedings of the 30th Applied Physics Association Conference, P87~), and due to its semimetallic nature, during recording, when Sn solidifies from a molten state by irradiation with a laser beam, it combines with 're and its particle size increases. It has become clear that in addition to the effect of suppressing growth, it also has the effect of acting as a nucleus for crystalline recovery during erasing, and that recording sensitivity and erasing sensitivity can be controlled by selecting the concentration of addition. An optical disc was prototyped using a recording thin film doped with (
1983 JAPAN DISPLAY Proceedings P46~
). This disk had the excellent characteristics of being able to record and erase data simultaneously in real time, and the recorded signal bits were also stable, but the sensitivity, especially the erase sensitivity, was not sufficient, and current semiconductor lasers, for example, are not capable of Since this was at the upper limit, further improvement in sensitivity was required.
発明の目的
本発明は従来のTo−TeO3酸化物系薄膜を改良し低
パワーで記録、消去か可能な高感度光学情報記録媒体を
提供することを目的とするものである。OBJECTS OF THE INVENTION The object of the present invention is to improve the conventional To--TeO3 oxide thin film and provide a highly sensitive optical information recording medium that can be recorded and erased with low power.
発明の構成
本発明は、前記目的を達成するためにTe成分が比較的
多いTe T@102系材料をベースに、少なくとも
Bi 、 Ge 、 Auを同時に添加して成る薄膜を
用いるものであり、前記添加物の各組成比を適当に選ぶ
ことで記録薄膜の安定性を損なうことなく記録消去感度
の向上を実現するものである。Structure of the Invention In order to achieve the above-mentioned object, the present invention uses a thin film formed by simultaneously adding at least Bi, Ge, and Au to a Te T@102-based material having a relatively large Te component. By appropriately selecting the composition ratio of each additive, it is possible to improve the recording/erasing sensitivity without impairing the stability of the recording thin film.
実施例の説明
以下、図面を参照しつつ本発明を詳述する。第1図は、
本発明の光学情報記録部材の断面図である。本発明にお
いては、基材1の上に記録薄膜2を蒸着あるいはスパッ
タリング等の方法で形式する。基材は通常の光ディスク
に用いるものであればよく、PMMA、塩化ビニール、
ポリカーボネイト等の透明な樹脂あるいは、ガラス板等
を適用することができる。DESCRIPTION OF EMBODIMENTS The present invention will now be described in detail with reference to the drawings. Figure 1 shows
FIG. 1 is a sectional view of an optical information recording member of the present invention. In the present invention, a recording thin film 2 is formed on a substrate 1 by a method such as vapor deposition or sputtering. The base material may be any material used for ordinary optical discs, such as PMMA, vinyl chloride,
A transparent resin such as polycarbonate, a glass plate, etc. can be used.
記録薄膜としてはTo −0−B i −Geの4元に
更にAu を添加した6元系薄膜を用いる。前述のよう
に、To −0−5n−Geの4元系薄膜を用いて形成
した記録薄膜は、実時間で同時に記録消去することが可
能であるが感度的に十分では無かったOこのTe −0
−8n−Geの4元系における感度限界は、前述したよ
うにSnに2つの働きを兼ねさせているという点に発す
ると考えられる。つまりSnの添加濃度を変化させるこ
とによって、例えばSnの添加濃度を増加した場合には
2つの働きのうちの結晶性の回復の核としての効果が大
きくなる反面、系全体の融点が上昇して溶融しにくくな
り記録が行ないにぐぐなる。逆に減少した場合には融点
は低下して溶融しやすくなる反面、消去時の結晶核が減
少し消去しにくくなる0もちろん極端に減少した場合に
はToの粒径成長の抑制効果が失なわれ可逆性が無くな
ってしまう。つ′1.!7、記録感度、消去感度はその
両方が同時にSnの濃度に依存するため、実際の系にお
いてはそのどちらをも満足する濃度を選択することにな
り、そこに組成的な感度限界が生じるものである。As the recording thin film, a six-element thin film is used, in which Au is further added to the quaternary To-0-B i -Ge. As mentioned above, a recording thin film formed using a quaternary thin film of To-0-5n-Ge is capable of recording and erasing data simultaneously in real time, but it is not sensitive enough. 0
The sensitivity limit in the -8n-Ge four-element system is thought to be due to the fact that Sn serves two functions as described above. In other words, by changing the additive concentration of Sn, for example, if the additive concentration of Sn is increased, the effect as a nucleus for recovering crystallinity, which is one of the two functions, becomes greater, but on the other hand, the melting point of the entire system increases. It becomes difficult to melt and recording becomes difficult. On the other hand, if it decreases, the melting point will drop and it will become easier to melt, but on the other hand, the number of crystal nuclei during erasing will decrease and it will become difficult to erase.Of course, if it decreases extremely, the effect of suppressing the grain size growth of To will be lost. We lose reversibility. '1. ! 7. Recording sensitivity and erasing sensitivity both depend on the Sn concentration at the same time, so in an actual system, a concentration that satisfies both of them must be selected, and there is a compositional sensitivity limit. be.
そこで本発明においては上記Snの役割を2つに分け、
記録時におけるToの粒成長の抑制作用をBiに、また
消去時における核生成の役割をAuに別々に担わせるこ
とによって材料設計の自由度を拡大し更なる感度向上を
計るものである。Therefore, in the present invention, the role of Sn is divided into two,
The degree of freedom in material design is expanded and sensitivity is further improved by separately allowing Bi to play the role of suppressing the grain growth of To during recording, and letting Au play the role of nucleation during erasing.
Biはその半金属的性質からSnと同様に膜中におりて
Toと結合して非晶質を形成しやすいうえ、例えばTe
との化合物B 12T esはSn−に比較しても融点
が低く記録感度の向上が期待できる。Due to its semimetallic nature, Bi is easily included in the film like Sn and combines with To to form an amorphous state.
Compound B 12T es has a lower melting point than Sn-, and can be expected to improve recording sensitivity.
Te TeO2系薄膜にAuを添加する効果について
は既に特願昭59−61463において明らかにした。The effect of adding Au to a TeTeO2 thin film has already been disclosed in Japanese Patent Application No. 59-61463.
ツまり、AuはTe T@!02系においてAu −
Teという何らかの化合物を形成し、その物質が結晶化
しやすいことから消去時において結晶核として働き消去
感度を高めるということに加えて、Auの性質として酸
化を受けないため少量の添加でも十分効果が有り、系全
体の他の特性におよぼす影響は少ない。また、Auを添
加した系においては目立って融点の低下が見られ、他の
添加物を適当に選ぶことで記録、消去の両特性に優れた
記録薄膜が得られると考えられるものである。Tsumari, Au is Te T@! In the 02 series, Au −
It forms a certain compound called Te, which is easily crystallized, so it acts as a crystal nucleus during erasing and increases the erasing sensitivity.Also, since it is a property of Au that it does not undergo oxidation, even a small amount of addition is sufficient. , the effect on other properties of the entire system is small. Furthermore, a noticeable decrease in the melting point was observed in the system to which Au was added, suggesting that by appropriately selecting other additives, a recording thin film with excellent recording and erasing properties can be obtained.
本発明においては、To −Tea2系材料に前述のよ
うに熱的安定性制御要素としてae、記録特性制御要素
としてBi消去特性制御要素と己てAuを適用し、各要
素の構成比を変えて最適組成の抽出を行なった。In the present invention, as mentioned above, ae is applied as a thermal stability control element, Bi is applied as a recording characteristic control element, and Au is applied as an erasure characteristic control element to the To-Tea2-based material, and the composition ratio of each element is changed. The optimum composition was extracted.
以下、具体的例をもって本発明を更に詳しく説明する。Hereinafter, the present invention will be explained in more detail using specific examples.
まず、本発明のTe −0−Ge −Bi −Au系記
録材料の製法について説明する。First, a method for manufacturing the Te-0-Ge-Bi-Au recording material of the present invention will be explained.
第2図は本発明の記録部材の製造に用いた4元の蒸着装
置のペルジャー内の様子を示したものである。図中、1
4〜17はそれぞれTo −TeO2,Ge 。FIG. 2 shows the inside of a Pelger of a quaternary vapor deposition apparatus used for manufacturing the recording member of the present invention. In the figure, 1
4 to 17 are To-TeO2, Ge, respectively.
Bi、Auに対応したソースであって10〜13はシャ
ッター=、8〜9 ハg厚モニター装置のヘッドを示す
。真空系18を1σ5To r r程度の真空に引すた
後、′真空系内に備えた4台の電子ビーム用ガン(図示
省略)を用い、4つのソースを各々、別々に電子線ビー
ムで加熱し蒸着レートをモニターして電源にフィトバッ
クしながら外部モーター3に接続されたシャフト4に支
持された回転板6上K Te −0−Ge −8n−A
uの6元薄膜を合成する。Sources corresponding to Bi and Au, 10 to 13 are shutters, and 8 to 9 are heads of a thickness monitoring device. After the vacuum system 18 is evacuated to approximately 1σ5 Torr, each of the four sources is separately heated with an electron beam using four electron beam guns (not shown) provided in the vacuum system. K Te -0-Ge -8n-A is heated on a rotary plate 6 supported by a shaft 4 connected to an external motor 3 while monitoring the deposition rate and feeding back to the power source.
Synthesize a 6-element thin film of u.
このとき、Te Te0)ソースには、例えば特願昭
58−116317に記載の焼結体ベレットを使用する
ことができ、5元を4つのソースで精度よく制御するこ
とが可能である。膜組成はAES 。At this time, the sintered pellet described in Japanese Patent Application No. 58-116317 can be used, for example, as the Te Te0) source, and it is possible to precisely control the five elements using four sources. The film composition is AES.
XPS 、XMA、S IMS等の方法ヲ用イテ決定す
ることができる。Methods such as XPS, XMA, SIMS, etc. can be determined.
蒸着方法としてはもちろん5つのソースを用いるととも
可能であるし、また特願昭58−233009に記載の
混合物ペレットを使用してソースの数を減らすことも可
能である。更に、スパッタリングによって形成すること
も可能である。As for the vapor deposition method, it is of course possible to use five sources, and it is also possible to reduce the number of sources by using the mixture pellets described in Japanese Patent Application No. 58-233009. Furthermore, it is also possible to form by sputtering.
次に、上述の方法で形成した記録薄膜についてその特性
を評価する方法について説明する。Next, a method for evaluating the characteristics of the recording thin film formed by the above method will be explained.
本発明の記録部材は繰り返し可逆的変化を利用するもの
であるから光学定数が増大する方向の特性(光学濃度が
増加するので黒化と呼ぶ)すなわち消去特性と、減少す
る方向の特性(光学濃度が減少するので白化と呼ぶ)す
なわち記録特性とを同時に評価する必要がある。Since the recording member of the present invention utilizes repeated and reversible changes, it has a characteristic in the direction in which the optical constant increases (called blackening because the optical density increases), that is, an erasing characteristic, and a characteristic in the direction in which the optical constant decreases (optical density In other words, it is necessary to evaluate the recording characteristics at the same time.
第3図は、本発明の記録部材の評価系を簡単に示したも
のである。半導体レーザ19を発した光は第1のレンズ
2oで平行光とされた後、第2のレンズ系21で円いビ
ームに整形され、ビームスフリツタ〜22.ん4板23
を通して第3のレンズ24で半値巾で約0.9μmの円
スポットに収束され、記録媒体26上に照射される。反
射光は入射光と反対の経路をたどりビームスプリッタ−
で曲げられ第4のレンズ27で収束され光検出器28に
入り記録状態の確認がおこなわれる。FIG. 3 simply shows an evaluation system for the recording member of the present invention. The light emitted from the semiconductor laser 19 is made into parallel light by the first lens 2o, then shaped into a circular beam by the second lens system 21, and then passed through the beam fritters to 22. N4 board 23
The light is focused through the third lens 24 into a circular spot with a half-width of approximately 0.9 μm, and is irradiated onto the recording medium 26 . The reflected light follows the opposite path to the incident light and passes through the beam splitter.
The light is bent by a fourth lens 27, and enters a photodetector 28, where the recording state is checked.
本発明においては、半導体レーザーを変調し、黒化特性
の評価には照射パワーを比較的小さく例えば1 mW/
μゴ程度のパワー密度に固定し照射時間を変えて黒化開
始の照射時間を測定する、または照射時間を例えば1μ
渡程度に固定し照射光パワーを変えて黒化開始の照射光
パワーを測定する等の方法を適用する。同様に白化特性
の評価には記録部材をあらかじめ黒化しておき照射光パ
ワーを比較的高く例えば7mW/μばに固定して白化に
必要な最短照射時間を測定する、あるいは照射時間を例
えば5onsec程度に固定し照射光パワーを変えて白
化開始の照射光パワーを測定する等の方法を適用する。In the present invention, the semiconductor laser is modulated, and the irradiation power is set to a relatively small value, for example, 1 mW/
Measure the irradiation time at which blackening starts by fixing the power density to approximately 1μ and changing the irradiation time, or
A method is applied, such as fixing the irradiation light at a certain level, varying the irradiation light power, and measuring the irradiation light power at which blackening begins. Similarly, to evaluate the whitening characteristics, the recording member is blackened in advance, the irradiation light power is fixed at a relatively high level, for example, 7 mW/μ, and the shortest irradiation time required for whitening is measured, or the irradiation time is set to about 5 onsec, for example. Apply a method such as fixing the irradiation light power to 100% and measuring the irradiation light power at which whitening starts by changing the irradiation light power.
次に、前述の方法で形成した様々な組成の記録部材につ
いて上記の方法により評価をおこなった結果について説
明する。Next, the results of evaluating recording members of various compositions formed by the above-described method using the above-described method will be described.
実施例1
評価材料組成として、Te −0−Ge−Biの原子数
の比が75:10:15となるように組成制御を行ない
、同時にこのTe7.Ge1゜Bil、と、Au、0と
の3つの系としてAuおよびOの組成制御を行なって様
々な組成の記録部材を得た。Example 1 As the evaluation material composition, the composition was controlled so that the ratio of the number of atoms of Te-0-Ge-Bi was 75:10:15, and at the same time, this Te7. Recording members with various compositions were obtained by controlling the compositions of Au and O in three systems: Ge1°Bil, Au, and 0.
第4図aは上記組成の中で(Te0.76G80.1B
io、16)02゜つまり、T @ eoG@sB 1
12020 に対してAuの添加量を変え1 mW/μ
ゴのパワーで照射したときの黒化開始に要する照射時間
内の変化を示したものである。この図よシ、Auを添加
することによって黒化開始の照射時間は大巾に短縮化さ
れるが、添加量が2%程度から既に十分な効果が得られ
ることがわかる。bは、例えば1mW/μばのパワーで
6μ玄照射して黒化した部分に、例えば照射時間を60
nSeCとして照射パワーを変化して照射したときの白
化開始に要する照射パワーの変化を示している。これか
ら、Auを添力dすることで白化開始に必要な照射光パ
ワーは増大するが15チ程度までは実用上問題が無いこ
と、20%では非常に白化しにくいことがわかる。この
2つの図からTe −0−B i −Ge 7 Au系
において基本的特性が確得でき、かつAuの添加量とし
ては2〜16襲の範囲に選ぶことで記録特性をそこなう
ことな〈従来の数倍の速度で消去することが可能である
ことがわかった。この時、照射パワー密度を高め8oる
と、各カーブはた方向ヘシフトすることが確かめられた
。Figure 4a shows (Te0.76G80.1B) among the above compositions.
io, 16) 02゜That is, T @eoG@sB 1
1 mW/μ by changing the amount of Au added to 12020
This figure shows the change in the irradiation time required to start blackening when irradiated with the power of This figure shows that the addition of Au greatly shortens the irradiation time to start blackening, but a sufficient effect can be obtained even when the amount added is about 2%. For example, b is irradiation time of 60μ to a blackened area by irradiating 6μ with a power of 1mW/μba, for example.
It shows the change in the irradiation power required to start whitening when irradiation is performed with changing the irradiation power as nSeC. From this, it can be seen that although adding d to Au increases the irradiation light power required to start whitening, there is no practical problem up to about 15%, and that whitening is extremely difficult to occur at 20%. From these two figures, the basic characteristics of the Te -0-B i -Ge 7 Au system can be obtained, and the addition amount of Au can be selected in the range of 2 to 16 times without impairing the recording characteristics. It was found that it is possible to erase data several times faster than At this time, it was confirmed that when the irradiation power density was increased to 8 degrees, each curve shifted in the other direction.
ついでTe −Ge −B iの構成比を変えた系につ
いて同様の実験を行なった結果について説明する。Next, the results of similar experiments conducted on systems in which the composition ratio of Te-Ge-B i was changed will be explained.
実施例2
評価材料組成としてTe −Ge −Bi 、 Au
、 Oの組成比を70:10:20となるように組成制
御を行ないこの中でTo −Ge −Biの3成分の組
成比を変化させて様々な組成の記録部材を得た。Example 2 Te-Ge-Bi, Au as evaluation material compositions
, O was controlled to have a composition ratio of 70:10:20, and recording members with various compositions were obtained by changing the composition ratios of the three components To--Ge--Bi.
第5図aは、上記組成物の中でTo −Bi −Geの
3成分系に占めるBiの組成比を15%とし、G。FIG. 5a shows G in which the composition ratio of Bi in the three-component system of To-Bi-Ge in the above composition is 15%.
の組成比を変化した時のTe −Ge −Bi −Au
−0系薄膜の黒化開始温度を例えば特開昭59−70
229記載の方法で、調べた結果を示す。この図からG
。Te-Ge-Bi-Au when changing the composition ratio of
For example, the temperature at which blackening starts for a -0 series thin film is
The results of the investigation using the method described in No. 229 are shown below. From this figure, G
.
の添加濃度が増加すると黒化開始温度が上昇し白状態の
熱的な安定性が高まることがわかる0これらの記録膜に
ついて60℃のクリーンオープン中に放置してその透過
率変化を調べたところ、変化開始温度が100’C以下
のものでは約24Hで透過率の減少が確認されたが、そ
れ以上のものでは、約1ケ月後にもせいぜい絶対量の1
%程度の変化しか見られずGe濃度が3%以上あれば熱
的安定性は十分−であると考えられる。更にGe濃度を
増すと膜はより高温の条件にも耐えるようになるが膜の
透過率の大巾な増大(吸収の減少)を伴って今度は逆に
黒化感度が低下する傾向になる。G。It can be seen that as the additive concentration increases, the blackening start temperature increases and the thermal stability of the white state increases. When these recording films were left in a clean open at 60°C, the change in transmittance was investigated. It was confirmed that the transmittance decreased after about 24 hours in the case where the change start temperature was 100'C or less, but in the case where the change start temperature was lower than 100'C, the transmittance decreased by at most 1% of the absolute amount after about 1 month.
%, and if the Ge concentration is 3% or more, the thermal stability is considered to be sufficient. If the Ge concentration is further increased, the film will be able to withstand higher temperature conditions, but the film's transmittance will greatly increase (absorption will decrease), and the blackening sensitivity will tend to decrease. G.
添加濃度が3%〜16%の範囲では十分な消去感度が得
られた。Sufficient erasure sensitivity was obtained when the addition concentration was in the range of 3% to 16%.
第6図すは、Te −Bi −Geの3成分系に占める
Geの組成比を10%としBiの組成比を変化した時の
記録感度の変化を示している照射パルス巾は約50nS
eCである。この図から、Bi の添加濃度が3%程度
ではやや感度が悪く反射率変化量も小さく、それ以下で
は白化しにくいこと10.20チ程度では十分な記録(
白化)感度が得られること、26%程度になるとやや感
度の低下とともに反射率変化量が減少することがわかる
。このとき、消去速度はやはりAuの効果で従来に数倍
することがわかったOBi濃度を更に増加するとやがて
主成分のTeの割合が減少し可逆性そのものが失なわれ
てしまう。Figure 6 shows the change in recording sensitivity when the composition ratio of Ge in the three-component system of Te-Bi-Ge is set to 10% and the composition ratio of Bi is changed.The irradiation pulse width is approximately 50 nS.
It is eC. From this figure, it can be seen that when the concentration of Bi added is about 3%, the sensitivity is somewhat poor and the amount of change in reflectance is small, and when it is less than that, whitening is difficult to occur.
It can be seen that sensitivity (whitening) can be obtained, and that when it reaches about 26%, the sensitivity decreases slightly and the amount of change in reflectance decreases. At this time, it has been found that the erasing speed is several times higher than that of the conventional method due to the effect of Au.If the OBi concentration is further increased, the proportion of Te, which is the main component, will eventually decrease and the reversibility itself will be lost.
以上のようにして各構成要素の適当な濃度がわかった。As described above, the appropriate concentration of each component was found.
次に、本発明の薄膜についてその湿度に対する耐久性を
比較した結果を示す。Next, the results of comparing the durability against humidity of the thin films of the present invention will be shown.
実施例3
従来よp Te TaO2系をペースとする酸化物系
薄膜においては膜中の酸素濃度によって耐湿性が変化す
ることが知られている。そこで、代表的組成としてTI
!17oGesB 116Au 1゜という組成をペー
ス吉しその酸素濃度が0〜50%の範囲で変化するよう
に組成制御をおこなった。Example 3 It has been known that the moisture resistance of an oxide thin film based on p Te TaO2 base changes depending on the oxygen concentration in the film. Therefore, as a typical composition, TI
! The composition was set at 17oGesB 116Au 1°, and the composition was controlled so that the oxygen concentration varied within the range of 0 to 50%.
第6図は、上記薄膜を40℃、90PH%の恒温恒湿槽
中に約1ケ月間放置したときの透過率変化の様子を調べ
た結果を示す。この図から全体の系に占める酸素の組成
比が10チ以上であれば初期の段階で透過率の減少が見
られるものの、あとはほとんど変化が無いこと、30%
以上であれば初期の状態から全く変化が見られないこと
がわかる。FIG. 6 shows the results of examining the change in transmittance when the thin film was left in a constant temperature and humidity chamber at 40° C. and 90 PH% for about one month. This figure shows that if the composition ratio of oxygen in the entire system is 10% or more, there is a decrease in transmittance at the initial stage, but there is almost no change after that.
If the above is the case, it can be seen that there is no change at all from the initial state.
酸素は、膜の中においてToと結合してT e02を形
成するか、あるいはGe、Biと結合してGeO2゜B
i2O3等を形成するかあるいはそれらが複合した酸化
物を形成していることも考えられるが、いずれもTeを
中心とするTo系合金を分断する形で混在しあうことで
その耐湿性を高める働きをするものと考えられる。ただ
し、0成分をあまり増加すると、系の熱伝達率が低下し
光照射による熱が蓄積されやすくなり、この結果くり返
し時において膜が破れやすくなる。0成分が40チ以下
であればこの点は問題が無いことがわかった。Oxygen combines with To to form T e02 in the film, or with Ge and Bi to form GeO2°B.
It is possible that they form i2O3 or a composite oxide, but both of these work to increase the moisture resistance of the To-based alloy, which is mainly composed of Te, by being mixed in a way that separates it. It is considered that the However, if the zero component is increased too much, the heat transfer coefficient of the system decreases and heat due to light irradiation is likely to be accumulated, and as a result, the film is likely to be torn during repeated use. It was found that there is no problem in this respect as long as the zero component is 40 inches or less.
以上の評価結果をまとめると、To−0−Ge−13i
−Au5元系薄膜は、To −Ge−8nの3成?分の
構成割合が第8図中のF−にで囲まれた領域に属し、か
つTeGeB1とAu 、 Oの構成割合が第7図中の
A〜Eで囲まれた領域において、例えばT e6002
0G@sB 1 、oAu6で代表されるものが、記録
消去特性、及び安定性に優れた記録特性を有することが
わかった。各点の座標を次表に示す0発明の効果
本発明によれば、Te −0−Ge −Bi−Auの6
元系酸化物薄膜を用いて、Teを可逆的変化の主成分と
し、各構成要素による効果、すなわち1)Geによる熱
的安定性向上
2) Bi による記録感度の向上3) Au
による−消去速度の向上4) Oによる耐湿性の向上
の複数の効果を合わせもつ優れた特性の、光学情報記録
部材を得ることができる0To summarize the above evaluation results, To-0-Ge-13i
-Is the Au 5-element thin film composed of the ternary To-Ge-8n? For example, in the region where the composition ratio of TeGeB1, Au, and O belongs to the region surrounded by F− in FIG. 8, and the composition ratio of TeGeB1, Au, and O belongs to the region surrounded by A to E in FIG.
It was found that materials represented by 0G@sB 1 and oAu6 have excellent recording/erasing characteristics and recording characteristics with excellent stability. The coordinates of each point are shown in the table below.0 Effects of the Invention According to the present invention, the 6
Using a base oxide thin film, Te is the main component for reversible changes, and the effects of each component are as follows: 1) Improvement in thermal stability due to Ge 2) Improvement in recording sensitivity due to Bi 3) Au
-Improvement in erasing speed 4) It is possible to obtain an optical information recording member with excellent characteristics that combines the multiple effects of improving moisture resistance due to O.
第1図は本発明の光学情報記録部材の一実施例における
断面図、第2図は本発明の光学情報記録媒体を製造する
蒸着装置の一例の構成を示す一部を切欠いた斜視図、第
3図は本発明の光学情報記録部材の記録消去特性を測定
する装置の光学系を示す断面図、第4図は本発明の光学
情報記録部材の一実施例におけるAuの濃度による記録
消去特性の変化を示すグラフ、第6図(a)、(ロ)は
各々本発明の光学情報記録部材のGe濃度と黒化開始温
度及び、Biの濃度と白化開始パワー特性を示すグラフ
、第6図は本発明の一実施例における0の濃度と耐湿特
性の関係を示すグラフ、第7図及び第8図は本発明の光
学情報記録部材に用いる光学情報記録膜の組成領域を表
わす三角ダイアグラムである0
1・・・・・・基材、2・・・・・・記録薄膜。
代理人の氏名 弁理士 中 尾 敏 男 ほか1名第1
図
第3図
第4図
(a)
B射時間(メJ1c)
(L)
照 射ハ0ワー (−町へ、す
第5図
<a)
(b)
if、 射ハ1フー (声wム鵡す
第6図
鉄量時間(day)
第7図
1θθ
Te−(re−84“FIG. 1 is a sectional view of an embodiment of the optical information recording member of the present invention, FIG. FIG. 3 is a cross-sectional view showing an optical system of an apparatus for measuring the recording and erasing characteristics of the optical information recording member of the present invention, and FIG. Graphs showing the changes, FIGS. 6(a) and 6(b) are graphs showing the Ge concentration and blackening start temperature, and the Bi concentration and whitening start power characteristics of the optical information recording member of the present invention, respectively. Graphs showing the relationship between the concentration of 0 and moisture resistance properties in one embodiment of the present invention, FIGS. 7 and 8 are triangular diagrams representing the composition range of the optical information recording film used in the optical information recording member of the present invention. 1... Base material, 2... Recording thin film. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 3 Figure 4 (a) B radiation time (MeJ1c) (L) Irradiation time (-to town, Figure 5<a) (b) if, radiation time (voice wm Fig. 6 Iron amount time (day) Fig. 7 1θθ Te-(re-84“
Claims (1)
で、膜中のTe−Bi−Geの原子数の和と、Au、O
との原子数との割合が第7図中におけるA〜Eで囲まれ
た斜線の領域に有り、かつTe、Bi、Geの原子数の
割合が第8図中におけるF〜Jで囲まれた領域に存在す
る薄膜を備えた光学情報記録部材。A thin film consisting of at least Te, O, Bi, Ge, and Au, with the sum of the number of Te-Bi-Ge atoms in the film and Au, O
The ratio of the number of atoms to the number of atoms is in the diagonally shaded area surrounded by A to E in Figure 7, and the ratio of the number of atoms of Te, Bi, and Ge is surrounded by F to J in Figure 8. An optical information recording member comprising a thin film present in a region.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59123002A JPS612593A (en) | 1984-06-15 | 1984-06-15 | Optical information-recording member |
| CA000483786A CA1245762A (en) | 1984-06-15 | 1985-06-12 | Reversible optical information recording medium |
| US06/743,801 US4656079A (en) | 1984-06-15 | 1985-06-12 | Reversible optical information recording medium |
| EP19850107452 EP0169367B1 (en) | 1984-06-15 | 1985-06-14 | Reversible optical information recording medium |
| DE8585107452T DE3574193D1 (en) | 1984-06-15 | 1985-06-14 | Reversible optical information recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59123002A JPS612593A (en) | 1984-06-15 | 1984-06-15 | Optical information-recording member |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS612593A true JPS612593A (en) | 1986-01-08 |
| JPH0530193B2 JPH0530193B2 (en) | 1993-05-07 |
Family
ID=14849829
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59123002A Granted JPS612593A (en) | 1984-06-15 | 1984-06-15 | Optical information-recording member |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS612593A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62152786A (en) * | 1985-12-27 | 1987-07-07 | Hitachi Ltd | phase change recording medium |
| JPS62209741A (en) * | 1986-03-11 | 1987-09-14 | Matsushita Electric Ind Co Ltd | Optical information recording member |
| JPS63155442A (en) * | 1986-12-19 | 1988-06-28 | Mitsubishi Kasei Corp | optical recording medium |
| JPH02158383A (en) * | 1988-12-12 | 1990-06-18 | Hitachi Ltd | Data recording membrane |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7505406B1 (en) | 2001-07-13 | 2009-03-17 | Evercom Systems, Inc. | Public telephone control with voice over internet protocol transmission |
| US7529357B1 (en) | 2003-08-15 | 2009-05-05 | Evercom Systems, Inc. | Inmate management and call processing systems and methods |
-
1984
- 1984-06-15 JP JP59123002A patent/JPS612593A/en active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62152786A (en) * | 1985-12-27 | 1987-07-07 | Hitachi Ltd | phase change recording medium |
| JPS62209741A (en) * | 1986-03-11 | 1987-09-14 | Matsushita Electric Ind Co Ltd | Optical information recording member |
| JPS63155442A (en) * | 1986-12-19 | 1988-06-28 | Mitsubishi Kasei Corp | optical recording medium |
| JPH02158383A (en) * | 1988-12-12 | 1990-06-18 | Hitachi Ltd | Data recording membrane |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0530193B2 (en) | 1993-05-07 |
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