JPS6126251A - Semiconductor composite element - Google Patents
Semiconductor composite elementInfo
- Publication number
- JPS6126251A JPS6126251A JP14900784A JP14900784A JPS6126251A JP S6126251 A JPS6126251 A JP S6126251A JP 14900784 A JP14900784 A JP 14900784A JP 14900784 A JP14900784 A JP 14900784A JP S6126251 A JPS6126251 A JP S6126251A
- Authority
- JP
- Japan
- Prior art keywords
- terminal
- thyristor
- reverse conduction
- terminals
- conduction thyristor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
Landscapes
- Thyristors (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は、半導体複合素子、特にサイリスタパワーモ
ジュールに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a semiconductor composite device, and in particular to a thyristor power module.
１個の容器内に複数の電力用半導体素子を内部で相互に
結線した状態で内包した半導体複合素子が、半導体パワ
ーモジュールとして近年急速に市場を拡大している。2. Description of the Related Art In recent years, the market for semiconductor composite devices, in which a plurality of power semiconductor devices are housed in a single container and are internally interconnected, has been rapidly expanding as a semiconductor power module.
なかでも、サイリスタパワーモジュール（以下サイリス
タモジュールという）は、例えば第１図のように逆阻止
すイリスタＣＲＩ、ＣＲ２Ｙ結線しＬものは、一般にダ
グル７−ム結線と呼ばれているか、そのままダブルアー
ムとして使う場合と、第２図のように逆並列結線として
トライアックと同等の使い方をする場合もある。Among them, thyristor power modules (hereinafter referred to as thyristor modules), for example those with reverse blocking iris CRI and CR2Y connections as shown in Figure 1, are generally called double-arm connections, or can be used as is as double-arm connections. In some cases, it is used in the same way as a triac, as shown in Figure 2, as an anti-parallel connection.
この発明は、上記のようなサイリスタモジュールの特長
を生かした新しいサイ・リスクパヮーモジュールを提供
するものｆある。以下図面に基づきこの発明の詳細な説
明する。The present invention provides a new thyristor module that takes advantage of the features of the thyristor module as described above. The present invention will be described in detail below based on the drawings.
第３図〜第５図はこの発明の一実施例を示す結線図であ
る。第３図〜第５図に示す結線例は、逆導通サイリスタ
ＲＲの７ノード側に直列に整流ダイオードＳＲＹ結線し
、全体を樹脂容器に収納しＬものである。外部へ取り出
丁端子は、逆導通サイリスタＲＲのカンード端子１．整
流ダイオードＳＲの７ノード端子２および共通端子３と
逆導通サイリスタＲＲの信号端子１Ｇである。3 to 5 are wiring diagrams showing one embodiment of the present invention. In the connection example shown in FIGS. 3 to 5, a rectifier diode SRY is connected in series to the 7th node side of the reverse conduction thyristor RR, and the whole is housed in a resin container. The terminal to be taken out to the outside is the canned terminal 1 of the reverse conduction thyristor RR. These are the 7-node terminal 2 and common terminal 3 of the rectifier diode SR, and the signal terminal 1G of the reverse conduction thyristor RR.
この発明の実施例の第１の使用例が第４図である。黒塗
りしたカソード端子１，７ノード端子２のみを使用し、
共通端子３はオープンとしたものであるか、この場合を
言、通常逆阻止サイリスタと同様となる。そして、逆導
通サイリスタＲＲの特性を生かして高耐圧、大電流で高
速のサイリスタが得られ、かつ、逆導通サイリスタＲＲ
内部のダイオード部の面積を小さくすることにより、逆
導通サイリスタ単体よりも大電流化とｄｖ／ｄｔ耐量の
高い特性が得られる。A first example of use of the embodiment of this invention is shown in FIG. Use only the blacked out cathode terminal 1 and 7 node terminal 2,
The common terminal 3 is open, or in this case, it is similar to a normal reverse blocking thyristor. By taking advantage of the characteristics of the reverse conduction thyristor RR, a high-voltage, large-current, and high-speed thyristor can be obtained, and the reverse conduction thyristor RR
By reducing the area of the internal diode section, characteristics such as larger current and higher dv/dt tolerance can be obtained than with a single reverse conduction thyristor.
第５図の使用例は、カソード端子１と７ノ一ド端子２′
ｌｋ外部で短絡して端子４とし、共通端子３との間で使
用する方法である。この場合は、逆導通サイリスタ単体
の場合と同様の使い方となるが、やはり逆導通サイリス
タＲＲ内部のダイオード部の面積を小さくすることｋよ
り大電流化が容易である。The usage example in Figure 5 is cathode terminal 1 and 7 node terminal 2'.
In this method, the terminal 4 is short-circuited externally to the terminal lk, and is used between the terminal 4 and the common terminal 3. In this case, the usage is similar to that of a single reverse conduction thyristor, but it is easier to increase the current by reducing the area of the diode section inside the reverse conduction thyristor RR.
第６図は逆導通サイリスタＲＲｔ−使ったＤＣチョッパ
回路の一例であるか、点線で囲んだ部分か第４図、第５
図に示す部分に相当する。この場合は、カソード端子１
，７ノード端子２．共通端子３の丁べてを使うこと忙な
る。Figure 6 is an example of a DC chopper circuit using a reverse conduction thyristor RRt.
Corresponds to the part shown in the figure. In this case, cathode terminal 1
, 7 node terminals 2. I'm busy using all of the common terminals 3.
以上説明したようＫ、この発明は、逆導通サイリスタと
、この逆導通サイリスタに直列に接続した整流ダイオ−
１７１個の樹脂容器内に封止し、前記逆導通サイリスタ
、整流ダイオードおよび両者の共通部分よりそれぞれ１
個の主端子と、前記逆導通サイリスタより信号端子ｔそ
れぞｎ外部に取り出した構成とし、前記各端子を選択的
に使用することにより逆導通サイリスタの特性を生かし
た高耐圧、大電流で、かつ、高速のサイリスタが得られ
、自在な使用か可能となる利点がある。As explained above, the present invention includes a reverse conduction thyristor and a rectifier diode connected in series with the reverse conduction thyristor.
171 pieces were sealed in a resin container, and 1 piece was removed from each of the reverse conduction thyristor, the rectifier diode, and the common part of both.
It has a configuration in which n main terminals are taken out from the reverse conduction thyristor, and each signal terminal t is taken out to the outside, and by selectively using each of the terminals, a high withstand voltage and a large current can be achieved by taking advantage of the characteristics of the reverse conduction thyristor. In addition, there is an advantage that a high-speed thyristor can be obtained and can be used freely.
第１図、第２図は従来のサイリスタモジュールの一例お
よび使用例ン示す図、第３図〜第５図はこの発明による
実施例の結線例を示す図、第６図はこの発明の使用例を
示す図である。
図中、ＲＲは逆導通サイリスタ、ＳＲは整流ダイオード
、１はカソード端子、１Ｇは信号端子、２は７ノード端
子、３は共通端子である。
なお、図中の同一符号は同一または相当部分ン示す。
代理人 大岩増雄 （外２名ン
第１図 第２図
第３図 第４図
第５図1 and 2 are diagrams showing an example of a conventional thyristor module and an example of its use, FIGS. 3 to 5 are diagrams showing a wiring example of an embodiment according to the present invention, and FIG. 6 is a diagram showing an example of use of the present invention. FIG. In the figure, RR is a reverse conduction thyristor, SR is a rectifier diode, 1 is a cathode terminal, 1G is a signal terminal, 2 is a 7-node terminal, and 3 is a common terminal. Note that the same reference numerals in the figures indicate the same or corresponding parts. Agent Masuo Oiwa (2 others) Figure 1 Figure 2 Figure 3 Figure 4 Figure 5
Claims (1)
スタに直列に接続した整流ダイオードを備え、前記逆導
通サイリスタ、整流ダイオード、および両者の共通部よ
りそれぞれ１個の主端子と、前記逆導通サイリスタより
信号端子をそれぞれ外部に取り出して構成したことを特
徴とする半導体複合素子。A resin container includes a reverse conduction thyristor and a rectifier diode connected in series to the reverse conduction thyristor, one main terminal each from the reverse conduction thyristor, the rectifier diode, and a common part thereof, and one main terminal from the reverse conduction thyristor. A semiconductor composite device characterized in that each signal terminal is taken out to the outside.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14900784A JPS6126251A (en) | 1984-07-16 | 1984-07-16 | Semiconductor composite element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14900784A JPS6126251A (en) | 1984-07-16 | 1984-07-16 | Semiconductor composite element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6126251A true JPS6126251A (en) | 1986-02-05 |
Family
ID=15465627
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14900784A Pending JPS6126251A (en) | 1984-07-16 | 1984-07-16 | Semiconductor composite element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6126251A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6657874B2 (en) | 2001-11-27 | 2003-12-02 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor converter circuit and circuit module |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5825255A (en) * | 1981-07-11 | 1983-02-15 | ブラウン・ボバリ・ウント・シ−・アクチエンゲゼルシヤフト | Converter unit |
-
1984
- 1984-07-16 JP JP14900784A patent/JPS6126251A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5825255A (en) * | 1981-07-11 | 1983-02-15 | ブラウン・ボバリ・ウント・シ−・アクチエンゲゼルシヤフト | Converter unit |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6657874B2 (en) | 2001-11-27 | 2003-12-02 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor converter circuit and circuit module |
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