JPS61275193A - 気相成長装置用サセプタ - Google Patents
気相成長装置用サセプタInfo
- Publication number
- JPS61275193A JPS61275193A JP60116148A JP11614885A JPS61275193A JP S61275193 A JPS61275193 A JP S61275193A JP 60116148 A JP60116148 A JP 60116148A JP 11614885 A JP11614885 A JP 11614885A JP S61275193 A JPS61275193 A JP S61275193A
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- carbon plate
- phase growth
- vapor phase
- growth apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60116148A JPS61275193A (ja) | 1985-05-29 | 1985-05-29 | 気相成長装置用サセプタ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60116148A JPS61275193A (ja) | 1985-05-29 | 1985-05-29 | 気相成長装置用サセプタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61275193A true JPS61275193A (ja) | 1986-12-05 |
| JPH0456799B2 JPH0456799B2 (de) | 1992-09-09 |
Family
ID=14679938
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60116148A Granted JPS61275193A (ja) | 1985-05-29 | 1985-05-29 | 気相成長装置用サセプタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61275193A (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01120814A (ja) * | 1987-11-04 | 1989-05-12 | Tokyo Electron Ltd | 半導体ウエハ用載置台 |
-
1985
- 1985-05-29 JP JP60116148A patent/JPS61275193A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01120814A (ja) * | 1987-11-04 | 1989-05-12 | Tokyo Electron Ltd | 半導体ウエハ用載置台 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0456799B2 (de) | 1992-09-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN114540948B (zh) | 半导体工艺设备中的基座及半导体工艺设备 | |
| KR100504634B1 (ko) | 에피텍셜 성장 중 기판 웨이퍼의 두 표면 사이에 존재하는 온도 기울기를 최소화 또는 제거하기 위한 서셉터, 그를 포함한 화학 기상 증착 시스템 및 이를 위한 방법 | |
| US5044943A (en) | Spoked susceptor support for enhanced thermal uniformity of susceptor in semiconductor wafer processing apparatus | |
| EP0182870B1 (de) | Verfahren und vorrichtung zur reduzierung von temperaturveränderungen durch eine halbleiterscheibe während der heizung | |
| JP2002158178A (ja) | 基板処理装置および半導体装置の製造方法 | |
| KR20020086486A (ko) | 기판의 에피택셜 프로세싱 장치 및 방법 | |
| JP7012518B2 (ja) | ＳｉＣエピタキシャル成長装置 | |
| JPH0845863A (ja) | 半導体基板の枚葉式熱処理装置 | |
| EP4549638A1 (de) | Vorrichtung und verfahren zur züchtung von siliciumcarbidkristallen hoher qualität | |
| KR19980018624A (ko) | 화학기상증착, 플라즈마강화 화학기상증착 또는 플라즈마 에치 반응기로부터의 배기 가스 처리 방법 및 장치 | |
| CN109841542B (zh) | SiC外延生长装置 | |
| JPH0590165A (ja) | 気相成長装置 | |
| JP2015076457A (ja) | 基板処理装置 | |
| JP2001010894A (ja) | 結晶成長用サセプタとこれを用いた結晶成長装置、およびエピタキシャル・ウェーハとその製造方法 | |
| JPH045000B2 (de) | ||
| JPH0456799B2 (de) | ||
| CN219195207U (zh) | 用于成膜装置的热场保温组件及立式成膜装置 | |
| JPS61219130A (ja) | 気相成長装置 | |
| JP2010034337A (ja) | 気相成長装置用のサセプタ | |
| JP4855029B2 (ja) | 半導体結晶の成長装置 | |
| JPH0338029A (ja) | 気相成長装置 | |
| CN103794528A (zh) | 半导体加工设备 | |
| JPS60263428A (ja) | 気相成長装置用サセプタ | |
| JPS61284916A (ja) | 半導体製造装置 | |
| JPS61223184A (ja) | 気相成長装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |