JPS6127975Y2 - - Google Patents
Info
- Publication number
- JPS6127975Y2 JPS6127975Y2 JP4334782U JP4334782U JPS6127975Y2 JP S6127975 Y2 JPS6127975 Y2 JP S6127975Y2 JP 4334782 U JP4334782 U JP 4334782U JP 4334782 U JP4334782 U JP 4334782U JP S6127975 Y2 JPS6127975 Y2 JP S6127975Y2
- Authority
- JP
- Japan
- Prior art keywords
- growth
- ampoule
- furnace
- growth furnace
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 36
- 239000003708 ampul Substances 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 13
- 239000002994 raw material Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 229910004813 CaTe Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
【考案の詳細な説明】
(a) 考案の技術分野
本考案は成長用アンプル内に封入した結晶成長
原料を液相状態（融液または溶液）から半導体結
晶、特に、−族、あるいは−族等の化合
物半導体単結晶に成長させる装置の改良に関する
ものである。[Detailed description of the invention] (a) Technical field of the invention This invention is a method for converting a crystal growth raw material sealed in a growth ampoule into a liquid phase state (melt or solution) to produce semiconductor crystals, particularly - group or - group crystals, etc. This invention relates to an improvement in an apparatus for growing compound semiconductor single crystals.
(b) 従来技術と問題点
半導体単結晶を成長させる一方法として多結晶
あるいは混合物等からなる結晶成長原料（必要に
応じて溶媒あるいは添加物を含める）を加熱溶融
して、液相状態から単結晶を成長させる方法が知
られている。このような半導体単結晶の成長装置
は第１図に示すように、所定の温度分布を有する
縦型の電気炉等からなる成長炉４内に、例えばカ
ドミウムCdとテルルTe等の結晶成長原料１をあ
らかじめ真空密封された高純度石英製の成長用ア
ンプル２を、前記成長炉４の上方に具備された上
下動駆動機構５と連結せる吊り下げ棒６によつて
挿入する構成がとられている。そして前記成長用
アンプル２を成長炉４内の高温領域において該ア
ンプル２中の成長原料１が完全に溶け込むまで加
熱溶融し、しかる後、前記上下動駆動機構５によ
つて前記アンプル２を例えば成長炉４中の低温領
域側へ垂下させて、該アンプル２の下方先端部に
結晶核３を生成せしめ、以後該アンプル２を徐々
に垂下させて徐冷することにより、順次結晶を成
長させて棒状のCaTeからなる化合物半導体単結
晶を得るようにしている。(b) Prior art and problems One method for growing semiconductor single crystals is to heat and melt a crystal growth raw material made of polycrystals or a mixture (including solvents or additives as necessary), and convert it from a liquid phase to a single crystal. Methods of growing crystals are known. As shown in FIG. 1, such a semiconductor single crystal growth apparatus uses crystal growth raw materials 1 such as cadmium Cd and tellurium Te in a growth furnace 4, which is a vertical electric furnace or the like having a predetermined temperature distribution. A growth ampoule 2 made of high-purity quartz that has been vacuum-sealed in advance is inserted through a hanging rod 6 that connects it to a vertical movement drive mechanism 5 provided above the growth furnace 4. . Then, the growth ampoule 2 is heated and melted in a high-temperature region in the growth furnace 4 until the growth raw material 1 in the ampoule 2 is completely melted, and then the ampoule 2 is moved by the vertical movement drive mechanism 5 to, for example, The ampoule 2 is allowed to hang down toward the low-temperature region side of the furnace 4 to generate a crystal nucleus 3 at the lower tip of the ampoule 2, and then the ampoule 2 is gradually allowed to hang down and slowly cooled to gradually grow crystals into a rod-like shape. We are trying to obtain a compound semiconductor single crystal consisting of CaTe.
ところで、上述の如き装置構成によつて良質な
単結晶を得るためには、結晶成長原料を封入した
成長用アンプル２を成長炉４内の中心に配設し、
かつ安定した所定の温度分布を有する炉中を垂下
させるようにして成長させることが肝要である。
しかるに従来の成長炉４にあつては、該炉４内の
熱の対流を防止してその温度分布を安定化するた
めに、成長炉４の下部開口端４′を耐熱部材８等
で閉塞した構成がとられているので、前記成長用
アンプル２を成長炉４内の中心に配設する際に、
吊り下げ棒６あるいは、成長炉４上部開口端近傍
に配設されたＸ−Ｙ微動調整具付きガイドローラ
７等によつて成長炉４の上部開口端より該炉４内
を観察することが妨げられ、上記成長用アンプル
２の配設調整を困難にしていた。そこで前記成長
炉４の下部開口端を開放型にして該下部開口端よ
り前記成長炉４内を例えば反射鏡等により観察可
能にすることにより、前記アンプル２を成長炉４
内の中心に設定することも考えられるが、結晶成
長中の成長炉４の下部開口端より空気が煙突効果
により流入し、前記アンプル２の周囲に生じる熱
気の対流によつて炉温が不安定になり、これに起
因してアンプル２中で生成される単結晶の結晶性
が悪くなるといつた欠点があつた。 By the way, in order to obtain a high-quality single crystal with the above-described apparatus configuration, the growth ampoule 2 containing the crystal growth raw material is placed in the center of the growth furnace 4.
In addition, it is important to grow the film in a manner that it hangs down in a furnace that has a stable and predetermined temperature distribution.
However, in the conventional growth furnace 4, in order to prevent heat convection within the furnace 4 and stabilize its temperature distribution, the lower open end 4' of the growth furnace 4 is closed with a heat-resistant member 8 or the like. Since the configuration is adopted, when the growth ampoule 2 is placed in the center of the growth furnace 4,
Observation of the inside of the growth furnace 4 from the upper opening end of the growth furnace 4 is obstructed by the hanging rod 6 or the guide roller 7 with an X-Y fine adjustment device disposed near the upper opening end of the growth furnace 4. This makes it difficult to adjust the arrangement of the growth ampoule 2. Therefore, the lower opening end of the growth furnace 4 is made open so that the inside of the growth furnace 4 can be observed from the lower opening end using, for example, a reflecting mirror.
Although it is conceivable to set the temperature at the center of the ampoule, air flows in from the lower open end of the growth furnace 4 during crystal growth due to the chimney effect, and the furnace temperature becomes unstable due to the convection of hot air generated around the ampule 2. This resulted in a disadvantage that the crystallinity of the single crystal produced in the ampoule 2 deteriorated.
(c) 考案の目的
本考案は上述した従来の欠点を解消するために
なされたもので、その目的は、成長用アンプルを
成長炉内の中心に容易に設定できると共に、成長
操作中の成長炉内での熱の対流を防止し、もつて
良質な単結晶を安定して成長し得る半導体単結晶
成長装置を提供するにある。(c) Purpose of the invention The present invention was made in order to eliminate the above-mentioned drawbacks of the conventional technology.The purpose of this invention is to enable the growth ampoule to be easily placed in the center of the growth reactor, and to prevent the growth from occurring during the growth operation. It is an object of the present invention to provide a semiconductor single crystal growth apparatus which can prevent heat convection within the device and stably grow a high quality single crystal.
(d) 考案の構成
上記目的を達成するため、本考案の半導体結晶
成長装置は、縦型成長炉内に結晶成長原料を封入
した成長用アンプルを上下動自在な駆動手段によ
つて配設し、前記アンプルを前記成長炉内で徐々
に垂下させて結晶を成長させる装置構成におい
て、上記成長炉の下部開口端に、該成長炉の加熱
状態下において当該開口端を閉塞し、かつ前記ア
ンプルを成長炉内に配設する際に、前記下部開口
端を通して当該成長炉内を目視し得るような閉塞
板を配備したことを特徴としている。(d) Structure of the invention In order to achieve the above object, the semiconductor crystal growth apparatus of the invention includes a growth ampoule containing a crystal growth material sealed in a vertical growth furnace, which is arranged by a driving means that can move up and down. , in an apparatus configuration in which the ampoule is gradually suspended in the growth furnace to grow a crystal, the ampoule is placed at a lower open end of the growth furnace, and the open end is closed under the heating state of the growth furnace; The present invention is characterized in that a closing plate is provided so that the inside of the growth reactor can be visually observed through the lower open end when the reactor is installed in the growth reactor.
(e) 考案の実施例
以下図面を用いて本考案の好ましい実施例につ
いて詳細に説明する。(e) Embodiments of the invention Preferred embodiments of the invention will be described in detail below with reference to the drawings.
第２図は本考案に係る半導体単結晶成長装置の
一実施例を示す要部断面図であり、第１図と同等
部分には同一符号を付した。図において、４は所
定の温度分布に昇温し得る加熱部４′を外周にそ
なえた縦型の成長炉であり、該成長炉４内に、あ
らかじめ所要の比率で例えばカドミウムCdとテ
ルルTe等の結晶成長原料１を真空密封してなる
高純度石英製の成長用アンプル２が、前記成長炉
４の上方に具備した上下動駆動機構５と連結され
た吊り下げ棒６によつて吊り下げられ、挿入する
構成がとられている。そしてさらに上記成長炉４
の下部開口端２１には、該開口端２１を開閉する
耐熱部材からなる閉塞板２２が例えば横引き開閉
自在に設置されている。このように成長炉４の下
部開口端２１に閉塞板２２を設けることにより、
前記成長炉４内に成長用アンプル２を挿設する際
には、前記下部開口端２１を閉鎖している閉塞板
２２を開いて、該下部開口端２１により、成長炉
４内のアンプル２を例えばその下方に配設された
反射鏡２３等によつて観察しながら前記XY微調
具付きガイドローラ７により成長炉４の中心に容
易に設定することが可能となる。また上記アンプ
ル２の設定後は前記下部開口端２１を閉塞板２２
によつて閉鎖しておくことにより、成長炉４内に
熱気の対流が生じることが防止される。よつて従
来問題となつていた成長用アンプル２が成長炉４
の中心からずれて、該アンプル２内における半径
方向の温度分布がその中心軸に対して非対称とな
ることや、また熱気の対流により成長炉４の温度
分布が不安定になる等に起因して成長中の結晶に
結晶粒界等の欠陥が生じるといつた不都合が解消
し、良質な単結晶を容易に成長することが可能と
なる。 FIG. 2 is a sectional view of essential parts showing an embodiment of the semiconductor single crystal growth apparatus according to the present invention, and the same parts as in FIG. 1 are given the same reference numerals. In the figure, reference numeral 4 denotes a vertical growth furnace equipped with a heating section 4' on the outer periphery that can raise the temperature to a predetermined temperature distribution. A growth ampoule 2 made of high-purity quartz, which is made by vacuum-sealing a crystal growth raw material 1, is suspended by a hanging rod 6 connected to a vertical movement drive mechanism 5 provided above the growth furnace 4. , is configured to insert. Furthermore, the growth furnace 4
A closing plate 22 made of a heat-resistant material for opening and closing the opening end 21 is installed at the lower opening end 21 of the opening end 21 so that the opening end 21 can be opened and closed horizontally, for example. By providing the closing plate 22 at the lower open end 21 of the growth furnace 4 in this way,
When inserting the growth ampoule 2 into the growth furnace 4, the closing plate 22 that closes the lower opening end 21 is opened, and the ampoule 2 inside the growth furnace 4 is inserted through the lower opening end 21. For example, it is possible to easily set the guide roller 7 at the center of the growth furnace 4 using the guide roller 7 with the XY fine adjustment tool while observing with a reflecting mirror 23 or the like disposed below the guide roller 7. Further, after setting the ampoule 2, the lower opening end 21 is connected to the closing plate 22.
By keeping the growth furnace 4 closed, hot air convection is prevented from occurring within the growth furnace 4. Therefore, the growth ampoule 2, which had been a problem in the past, was replaced by the growth furnace 4.
This is due to the fact that the temperature distribution in the radial direction within the ampoule 2 becomes asymmetrical with respect to its central axis due to deviation from the center of the ampoule 2, and that the temperature distribution in the growth furnace 4 becomes unstable due to hot air convection. Inconveniences such as defects such as grain boundaries occurring in the growing crystal are eliminated, and it becomes possible to easily grow a high-quality single crystal.
なお、上述した実施例においては、成長炉４の
下部開口端２１に閉塞板２２を横引き開閉型に設
置した場合の構成例について説明したが、本考案
はこれに限定されるものではなく、例えば前記下
部開口端２１にレンズシヤツターの如く組み合わ
さつた複数枚の金属羽根が開閉するシヤツター機
構を取りつけた構成としてもよく、第２図による
実施例と同様の目的を達成することができる。 In addition, in the above-mentioned embodiment, an example of the configuration was described in which the closing plate 22 was installed in a horizontal opening/closing type at the lower open end 21 of the growth furnace 4, but the present invention is not limited to this. For example, the lower opening end 21 may be provided with a shutter mechanism that opens and closes a plurality of metal blades assembled together like a lens shutter, and the same object as the embodiment shown in FIG. 2 can be achieved.
またさらに他の実施例として、前記成長炉４の
下部開口端２１に例えば石英製の耐熱透明板から
なる閉塞板を閉鎖状に固着した構成としてもよ
い。かかる構成においては、成長用アンプル２を
成長炉４内の中心に調整設定するに際し、閉塞板
が透明なるがため該閉塞板を介して成長炉４内を
観察するとができる利点を有すると共に前記第２
図による実施例と同様の目的を達成できることは
いうまでもない。 Furthermore, as another embodiment, a closing plate made of a heat-resistant transparent plate made of quartz, for example, may be fixed to the lower open end 21 of the growth furnace 4 in a closed shape. This configuration has the advantage that when adjusting and setting the growth ampoule 2 at the center of the growth furnace 4, the inside of the growth furnace 4 can be observed through the closure plate because the closure plate is transparent. 2
It goes without saying that the same objective as the illustrated embodiment can be achieved.
(f) 考案の効果
以上の説明から明らかなように、本考案に係る
半導体結晶成長装置によれば、成長炉の下部開口
端に閉塞板を開閉自在に配設するか、あるいは透
明閉塞板を固定的に配設することにより、成長用
アンプルを成長炉内の中心に容易に設定すること
が可能となると共に該成長炉の温度分布が安定化
する利点を有し、良質な結晶を成長せしめること
ができる等、実用上すぐれた効果を発揮する。よ
つて本考案は、この種の半導体結晶成長装置に適
用して極めて有利である。(f) Effect of the invention As is clear from the above explanation, according to the semiconductor crystal growth apparatus according to the invention, a closing plate is provided at the lower open end of the growth furnace so as to be openable and closable, or a transparent closing plate is provided. By arranging it in a fixed manner, the growth ampoule can be easily set in the center of the growth furnace, and has the advantage of stabilizing the temperature distribution of the growth furnace, allowing the growth of high-quality crystals. It has excellent practical effects. Therefore, the present invention is extremely advantageous when applied to this type of semiconductor crystal growth apparatus.
第１図は従来の半導体単結晶成長装置を説明す
る要部縦断面図、第２図は本考案に係る半導体単
結晶成長装置の一実施例を示す要部縦断面図であ
る。
図において１は結晶成長原料、２は成長用アン
プル、４は縦型成長炉、５は上下動駆動機構、６
は吊り下げ棒、７はＸ−Ｙ微動調整具付きガイド
ローラ、２１は下部開口端、２２は閉塞板、２３
は反射鏡を示す。
FIG. 1 is a longitudinal cross-sectional view of a main part of a conventional semiconductor single crystal growth apparatus, and FIG. 2 is a longitudinal cross-sectional view of a main part of an embodiment of a semiconductor single crystal growth apparatus according to the present invention. In the figure, 1 is a raw material for crystal growth, 2 is a growth ampoule, 4 is a vertical growth furnace, 5 is a vertical movement drive mechanism, 6
is a hanging rod, 7 is a guide roller with an X-Y fine adjustment device, 21 is a lower opening end, 22 is a closing plate, 23
indicates a reflector.
Claims (1)
アンプルを上下動自在な駆動手段によつて配設
し、前記アンプルを前記成長炉内で徐々に垂下さ
せて結晶を成長させる装置構成において、上記成
長炉の下部開口端に、該成長炉の加熱状態下にお
いて当該開口端を閉塞し、かつ前記成長用アンプ
ルを成長炉内に配設する際に前記下部開口端を通
して当該成長炉内を目視し得るような閉塞板を配
備したことを特徴とする半導体結晶成長装置。 An apparatus configuration in which a growth ampoule containing a crystal growth raw material is placed in a vertical growth furnace by a driving means that can be moved up and down, and the ampoule is gradually lowered in the growth furnace to grow the crystal, The lower open end of the growth furnace is closed under the heating state of the growth furnace, and the inside of the growth furnace is visually inspected through the lower open end when the growth ampoule is placed in the growth furnace. 1. A semiconductor crystal growth apparatus, characterized in that it is equipped with a blocking plate that allows the crystal to grow.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4334782U JPS58148070U (en) | 1982-03-26 | 1982-03-26 | Semiconductor crystal growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4334782U JPS58148070U (en) | 1982-03-26 | 1982-03-26 | Semiconductor crystal growth equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58148070U JPS58148070U (en) | 1983-10-05 |
| JPS6127975Y2 true JPS6127975Y2 (en) | 1986-08-20 |
Family
ID=30054440
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4334782U Granted JPS58148070U (en) | 1982-03-26 | 1982-03-26 | Semiconductor crystal growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58148070U (en) |
-
1982
- 1982-03-26 JP JP4334782U patent/JPS58148070U/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58148070U (en) | 1983-10-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6969502B2 (en) | Method and device for growing large-volume oriented monocrystals | |
| EP0252537A1 (en) | Process for crystal growth of KTiOPO4 from solution | |
| US6071341A (en) | Apparatus for fabricating single-crystal silicon | |
| US4578145A (en) | Method of making monocrystalline ternary semiconductor compounds | |
| JPS6127975Y2 (en) | ||
| KR910006743B1 (en) | Horizental bridgman monocrystal growing device | |
| US6736893B2 (en) | Process for growing calcium fluoride monocrystals | |
| JPH09175889A (en) | Single crystal pull-up apparatus | |
| JPH1179880A (en) | Apparatus and method for producing large diameter fluorite | |
| JP2705809B2 (en) | Single crystal pulling device | |
| CN215713513U (en) | Heating body in Bridgman method | |
| JPH054895A (en) | Single crystal manufacturing method and manufacturing apparatus | |
| JPH1081593A (en) | Production of cz silicon single crystal and apparatus therefor | |
| JP2520924B2 (en) | Single crystal pulling device | |
| CN105803518B (en) | Class Czochralski crystal growth device and method | |
| US20040221793A1 (en) | Method for producing an optical fluoride crystal without annealing | |
| Sabharwal et al. | The effect of crucible movement in Bridgman‐Stockbarger technique | |
| JPS6012318B2 (en) | Single crystal pulling method and device | |
| JP2024504533A (en) | Thermal field adjustment device and method for single crystal growth | |
| JPH08290991A (en) | Method for growing compound semiconductor single crystal | |
| JPH0297480A (en) | Single crystal pulling up device | |
| JPS6335492A (en) | Growth of compound semiconductor crystal | |
| JPH11292681A (en) | Bridgman single crystal growth equipment | |
| JPH04160087A (en) | Apparatus for producing semiconductor single crystal | |
| JPH02124792A (en) | Method for growing single crystal |