JPS6138418B2 - - Google Patents

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Publication number
JPS6138418B2
JPS6138418B2 JP15949278A JP15949278A JPS6138418B2 JP S6138418 B2 JPS6138418 B2 JP S6138418B2 JP 15949278 A JP15949278 A JP 15949278A JP 15949278 A JP15949278 A JP 15949278A JP S6138418 B2 JPS6138418 B2 JP S6138418B2
Authority
JP
Japan
Prior art keywords
magnetic field
magnetic
coil
output
sensing element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP15949278A
Other languages
Japanese (ja)
Other versions
JPS5583861A (en
Inventor
Kohei Nakagawa
Tetsuo Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oi Electric Co Ltd
Original Assignee
Oi Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oi Electric Co Ltd filed Critical Oi Electric Co Ltd
Priority to JP15949278A priority Critical patent/JPS5583861A/en
Publication of JPS5583861A publication Critical patent/JPS5583861A/en
Publication of JPS6138418B2 publication Critical patent/JPS6138418B2/ja
Granted legal-status Critical Current

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Description

【発明の詳細な説明】 本発明は磁界の強さを測定するための磁気測定
装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a magnetic measuring device for measuring the strength of a magnetic field.

磁気検知素子としてホール素子があげられる
が、磁気検知部は測定点の温度の影響を受けやす
く、測定に誤差を生じやすい。また、出力電圧が
小さく数百mV程度であるため、測定点と出力電
圧を読み取る場所が離れている場合には、ホール
素子とホール素子出力電圧を測定する測定器を接
続するためのケーブルに雑音等が誘導され測定に
誤差を生じやすく、取扱いが不便となる。
A Hall element can be used as a magnetic sensing element, but the magnetic sensing part is easily influenced by the temperature of the measurement point, and tends to cause errors in measurement. In addition, since the output voltage is small, about several hundred mV, if the measurement point and the place where the output voltage is read are far apart, noise may occur in the cable that connects the Hall element and the measuring device that measures the Hall element output voltage. etc., which tends to cause errors in measurement and makes handling inconvenient.

本発明は、従来技術の上記の如き欠点を解消し
て、外部雑音による誘導妨害の影響が受け難くか
つ測定点と読み取り位置とが離れている場合にも
容易に測定することのできる磁気測定装置を提供
するものである。
The present invention solves the above-mentioned drawbacks of the prior art, and provides a magnetic measuring device that is less susceptible to induced interference caused by external noise and that can easily perform measurements even when the measuring point and reading position are far apart. It provides:

以上図面により本発明を詳細に説明する。 The present invention will be described in detail with reference to the drawings.

まず本発明の原理について説明する。 First, the principle of the present invention will be explained.

磁性体に印加する磁界Hを漸次増加した場合、
磁性体断面における磁束密度Bは増加し、第1図
に示す如くヒステリシス曲線を描く。磁界Hが飽
和磁界+HSになると、磁束密度Bは飽和磁束密
度+BSとなり、これ以上磁界Hを増加しても磁
束密度Bは微増となるのみである。
When the magnetic field H applied to the magnetic material is gradually increased,
The magnetic flux density B in the cross section of the magnetic material increases and draws a hysteresis curve as shown in FIG. When the magnetic field H reaches the saturation magnetic field +H S , the magnetic flux density B becomes the saturation magnetic flux density +B S , and even if the magnetic field H is increased beyond this point, the magnetic flux density B only increases slightly.

次に、磁界+HSが印加されている状態からこ
の磁性体を反対方向に磁化してゆくと、その磁性
体の飽和保持力−HCの磁界で磁束密度Bは0と
なり、さらに減少し−HSでは、磁束密度は−BS
となる性質がある。
Next, when this magnetic body is magnetized in the opposite direction from the state where the magnetic field +H S is applied, the magnetic flux density B becomes 0 due to the magnetic field with the saturation coercive force -H C of the magnetic body, and further decreases - At H S , the magnetic flux density is −B S
There is a property that

ここで第2図に示す如く、検知コイルLPを巻
いた磁性体Mに、時間Δtの間に印加磁界を−H
Sから+HSまで一定速度で変化させた時の検知出
力について検討する。+HSにより検知コイルLP
を貫通する磁束をΦSとし−HSにより検知コイル
Pを貫通する磁束を−ΦSとすると、時間Δtの
間に第3図aのように印加磁界Hが−HSから+
Sまで変化した場合、検知コイルLPには、 eLp=2Φ/Δt なる電圧が発生することは周知のことである。
第3図bにeLpの経時変化を示す。前記におい
て、磁性体に印加される外部磁界Hが−HSから
+HSまで変化する時間をΔtとしたが、外部磁
界Hが−HSから+HSまで変する時間がΔt2(Δ
t2>Δt)となれば、検知出力eLpが低下するこ
とは明らかである。
Here, as shown in FIG. 2, an applied magnetic field of −H is applied to the magnetic body M around which the detection coil L P is wound for a time Δt.
Let's examine the detection output when changing from S to + HS at a constant speed. Detection coil L P by +H S
If the magnetic flux passing through the sensing coil L P is -Φ S and the magnetic flux penetrating the sensing coil L P by -H S is -Φ S , then the applied magnetic field H changes from -H S to + during time Δt as shown in Figure 3a.
It is well known that when the voltage changes to H S , a voltage of e Lp =2Φ S /Δt is generated in the detection coil L P .
Figure 3b shows the change in e Lp over time. In the above, the time during which the external magnetic field H applied to the magnetic material changes from -HS to + HS was Δt, but the time during which the external magnetic field H changes from -HS to + HS is Δt 2
t 2 >Δt), it is clear that the detection output e Lp decreases.

次に磁界変化を検出するために、検知出力eLp
の有無を判定すべく検知コイルLPに第4図に示
す如きしきい値回路を接続した場合において、磁
界変化が遅いときは、検知出力eLpは小となり、
磁性体Mが飽和から逆極性に飽和したことの検知
は不可能である。
Next, in order to detect magnetic field changes, the detection output e Lp
When a threshold circuit as shown in Fig. 4 is connected to the detection coil L P to determine the presence or absence of
It is impossible to detect that the magnetic body M has saturated from saturated to reverse polarity.

本発明では、所定の変化磁界HXは検知素子を
構成する磁性体Mに印加するように構成するとと
もに、外部磁界Hの変化の緩急にかかわらず常に
一定値以上の検知出力eLpを発生せしめるように
構成するために、変化磁界HXを発生せしめるた
めの磁界印加コイルと基準電源を備えている。
In the present invention, the predetermined changing magnetic field H X is configured to be applied to the magnetic body M constituting the sensing element, and a sensing output e Lp always equal to or higher than a certain value is generated regardless of how fast or slow the change in the external magnetic field H is. In order to have such a configuration, a magnetic field applying coil and a reference power source are provided for generating a changing magnetic field H.sub.X.

次に印加磁界HXとの関係を説明した後に、外
部磁界Hが測定できる原理を説明する。
Next, after explaining the relationship with the applied magnetic field Hx , the principle by which the external magnetic field H can be measured will be explained.

説明を容易にするために、外部磁界Hは時間と
ともに H=at……(1) (aは磁界の単位時間あたりの変化量、tは時
間)なる近似式で変化するものとする。また、外
部磁界Hの検知範囲を+Hn〜−Hnとした場合、
検知素子の磁性体Mに第1図に示す如き磁化特性
を示す磁性体を用いるとすれば、印加磁界HX
SS(=Hn+HS)から−HSS(=Hn−HS)ま
で変化させればよい。
For ease of explanation, it is assumed that the external magnetic field H changes with time according to the following approximate formula: H=at...(1) (a is the amount of change in the magnetic field per unit time, t is time). Also, when the detection range of the external magnetic field H is +H n ~ -H n ,
If a magnetic material exhibiting magnetization characteristics as shown in FIG. 1 is used as the magnetic material M of the sensing element, the applied magnetic field H ).

次にHXの−HSSから+HSSまでの変化を HX=bt−HSS……(2) (bは印加磁界HXの単位時間あたりの変化
量、tは時間) なる1次式で近似する。但しbはaの少なくとも
数倍とする。
Next, the change in H X from -H SS to +H SS is expressed as H X = bt - H SS ...(2) (b is the amount of change per unit time of the applied magnetic field H Approximate by However, b is at least several times as large as a.

さて、外部磁界Hがt=0から変化を始めると
同時に印加磁界HXをHX=−HSSなる値から式(2)
の如く変化させると、第5図bに示すような合成
磁界となり、第5図aに示すとおりt=t1の時点
で印加磁界HXは外部磁界Hと平衡し、t1以降は
検知素子の磁性体Mは逆飽和に至らしめられ、t
=t1の時に第5図Cに示すように検知コイルLP
にはeLp1なる出力電圧が発生する。ここで、t1
において式(1)と式(2)の絶対値が等しく符号は互に
逆となるから、式(1)の右辺と式(2)の右辺は負符号
に変えて符号で結び、t=t1を代入してaを求め
ると a=−(bt1−HSS)/t1となり、この値を式(1)
に代入すればH=−(bt1−HSS)となり、外部磁
界Hの強度と極性が判定できる。
Now, at the same time that the external magnetic field H starts to change from t=0 , the applied magnetic field H
When the magnetic field is changed as shown in FIG. 5b, the resultant magnetic field is as shown in FIG. 5b , and as shown in FIG. 5a , the applied magnetic field H The magnetic body M of is brought to reverse saturation, and t
= t 1 , the detection coil L P as shown in Fig. 5C
An output voltage e Lp1 is generated. Here, t 1
Since the absolute values of equation (1) and equation (2) are equal and the signs are opposite, the right-hand side of equation (1) and the right-hand side of equation (2) are changed to a negative sign and connected by a sign, and t=t Substituting 1 to find a, we get a=-(bt 1 - H SS )/t 1 , and this value is expressed in equation (1).
By substituting , H=-(bt 1 - H SS ), and the strength and polarity of the external magnetic field H can be determined.

次に、印加磁界HXを発生させる磁界印加コイ
ルLfの形状を第6図に示すごとく巻数をN、コ
イル長を、半径をrとすれば、磁性体Mを配置
する磁界印加コイルLfの同心同軸上の中央P点
における印加磁界HXの強度は通電電流をIとす
ると となり式(3)の比例関係からIを測定することによ
り印加磁界HXを変化できる。
Next, let us assume that the shape of the magnetic field applying coil L f that generates the applied magnetic field H x is as shown in FIG. 6, with the number of turns being N and the coil length being radius r . The strength of the applied magnetic field H x at the central point P on the concentric axis of By measuring I from the proportional relationship in equation (3), the applied magnetic field H x can be changed.

本発明の一実施例を第7図に示し、個々の回路
の構成及び動作について以下詳細に説明する。
An embodiment of the present invention is shown in FIG. 7, and the configuration and operation of each circuit will be described in detail below.

第8図は磁性体Mに検知コイルLPを巻きさら
に磁界印加コイルLfを巻いた検知素子10の外
観図である。
FIG. 8 is an external view of the sensing element 10 in which a sensing coil L P is wound around a magnetic body M, and a magnetic field applying coil L f is further wound thereon.

検知コイルLPの出力を検知するために検知コ
イルLPに接続するしきい値回路2は第4図に示
す如く差動増幅器2−1は正入力端子と負入力端
子を備えており、正入力端子に検知コイルLP
一端を接続し負入力端子ににはしきい値電源VTH
を接続した構成としている。ここで、検知出力e
LpがVTH以上となれば、所望のしきい値回路出力
pを得ることが可能である。
As shown in FIG. 4, the threshold circuit 2 connected to the detection coil L P in order to detect the output of the detection coil L P has a differential amplifier 2-1 equipped with a positive input terminal and a negative input terminal. One end of the detection coil L P is connected to the input terminal, and the threshold power supply V TH is connected to the negative input terminal.
The configuration is such that the two are connected. Here, the detection output e
If Lp is equal to or greater than VTH , it is possible to obtain the desired threshold circuit output Vp .

基準電流源1としては種々考えられるが、一例
として出力電圧が三角波状に変化する基準電流源
を使用する場合には、矩形波信号を積分し増幅す
れば目的の出力波形をとり出し得る基準電流源を
得ることが可能である。
Various types of reference current source 1 can be considered, but as an example, when using a reference current source whose output voltage changes in the form of a triangular wave, a reference current source that can extract the desired output waveform by integrating and amplifying a rectangular wave signal is used. It is possible to obtain the source.

基準電流の抽出の一例として第9図に示す如く
磁界印加コイルLfに直列に基準抵抗器5を挿入
して基準電流源1に接続すれば、基準電流Ir
流しした時、抵抗Rの基準抵抗器5の両端には、
電圧降下Er=Ir×Rを生じ、これから容易に基
準電流値を知り得る。
As an example of extracting the reference current, if a reference resistor 5 is inserted in series with the magnetic field applying coil L f and connected to the reference current source 1 as shown in FIG. 9, when the reference current I r is applied, the resistor R At both ends of the reference resistor 5,
A voltage drop E r =I r ×R is generated, from which the reference current value can be easily determined.

次に外部磁界Hと印加磁界HXが平衡した時点
で基準抵抗器5の両端電圧Erを読み出す為に、
本装置には第10図に示す如きレベル抽出保持回
路3がある。このレベル抽出保持回路3は入力電
圧Erを抽出する間だけ、スイツチ制御回路3−
2にしきい値回路2から得られる出力でVpをス
イツチ制御信号として与えスイツチ3−1で閉じ
て、入力側が高インピーダンスの増幅器3−3に
並列に接続された蓄電器3−4を充電した後、ス
イツチ3−1を開いて蓄電器3−4に保持した値
を出力するものである。
Next, in order to read the voltage E r across the reference resistor 5 when the external magnetic field H and the applied magnetic field H x are in equilibrium,
This device includes a level extraction and holding circuit 3 as shown in FIG. This level extraction and holding circuit 3 operates only while extracting the input voltage E r , and the switch control circuit 3 -
After applying V p as a switch control signal from the output obtained from the threshold circuit 2 to 2 and closing the switch 3-1, the capacitor 3-4 whose input side is connected in parallel to the high-impedance amplifier 3-3 is charged. , the switch 3-1 is opened to output the value held in the capacitor 3-4.

検知素子10に用いる磁性体Mとして保持力H
Cの小なる磁性材料を用いれば、測定精度の向上
が得られるが、なお保持力HCによるバイアスが
かかつているため、さらに高精度の測定を実施す
るためには、保持力HCの成分を補正する必要が
ある。具体的方法は、(1)永久磁石により−HC
バイアスを与えること、(2)レベル抽出保持の際H
Cに相当するバイアス電圧を第11図の如く与え
ること等の任意の手段を選べばよい。
The magnetic material M used in the sensing element 10 has a coercive force H
If a magnetic material with a small C is used, measurement accuracy can be improved, but since it is still biased by the coercive force H C , in order to perform even more accurate measurements, the component of the coercive force H C is need to be corrected. The specific method is (1) applying a bias of -H C with a permanent magnet, (2) applying a bias of H C during level extraction and holding.
Any means such as applying a bias voltage corresponding to C as shown in FIG. 11 may be selected.

次に本装置により、外部磁界Hを測定する場合
の各部の動作波形を第12図を用いて説明する。
検知コイルLPの出力eLpは磁性体Mを飽和から
逆飽和に至らしめる方向で正又は負極性のパルス
状で出力されるが、装置の構成を簡易とするため
に、正極性の検知出力eLpを使用するものとす
る。検知出力eLpは、第12図aで示される。次
に第12図bにおいて検知素子10の磁性体Mに
印加される外部磁界をHで、印加磁界をHXで示
す。同図において印加磁界HXが外部磁界Hの極
性と逆向きで強度が|HX|>|H|から|HX
<|H|となる時に検知出力eLpを得ることがで
きる。前述の如く印加磁界HXは磁界印加コイル
fに流れる電流に比例しかつ基準抵抗器5の両
端に発生する電圧Erに比例する。従つて、第1
2図cの細線は検知出力eLpが発生した時の基準
電流Irを抽出保持した電圧Erの波形であり、太
線が外部磁界Hの極性に等しい抽出波形Epとな
る。太線で示される出力波形Epを得るにはレベ
ル抽出保持回路3の後段に利得−1の増幅を接続
すればよい。または基準抵抗器5に接続するHC
分補正回路4の増幅器4−1の入力端子を逆接続
とすれば、前述の利得−1の増幅器は不要とな
る。
Next, the operating waveforms of each part when measuring the external magnetic field H with this device will be explained using FIG. 12.
The output e Lp of the detection coil L P is output in the form of a pulse of positive or negative polarity in the direction that brings the magnetic material M from saturation to reverse saturation, but in order to simplify the configuration of the device, the detection output is of positive polarity. e Lp shall be used. The detected output e Lp is shown in FIG. 12a. Next, in FIG. 12b, the external magnetic field applied to the magnetic body M of the sensing element 10 is indicated by H, and the applied magnetic field is indicated by H.sub.X. In the same figure, the applied magnetic field H X has a polarity opposite to that of the external magnetic field H, and the intensity changes from |H X |>|H| to |H X |
When <|H|, a detection output e Lp can be obtained. As described above, the applied magnetic field H x is proportional to the current flowing through the magnetic field applying coil L f and proportional to the voltage E r generated across the reference resistor 5 . Therefore, the first
The thin line in FIG. 2c is the waveform of the voltage E r obtained by extracting and holding the reference current I r when the detection output e Lp is generated, and the thick line is the extracted waveform E p having the same polarity as the external magnetic field H. In order to obtain the output waveform E p shown by the bold line, it is sufficient to connect an amplifier with a gain of -1 after the level extraction and holding circuit 3. or H C connected to reference resistor 5
If the input terminals of the amplifier 4-1 of the component correction circuit 4 are reversely connected, the aforementioned amplifier with a gain of -1 becomes unnecessary.

本発明の磁気測定装置は原理的に構造が単純で
ありかつ小形となる。また、外来雑音の影響を受
け難い。磁気検知素子10は、温度特性が良好で
あるため、高信頼度で外部の磁界を変化すること
が可能となる。
The magnetic measurement device of the present invention has a simple structure in principle and is small in size. Additionally, it is less susceptible to external noise. Since the magnetic sensing element 10 has good temperature characteristics, it is possible to change the external magnetic field with high reliability.

本装置の使用例として、第13図に示す如く導
体30を流れる電流IBにより発生する磁界HX
磁気検知素子10と磁気装置本体20よりなる本
発明装置により測定することで、導体電流IB
非接触にて測定できるため、特に高圧送電線の電
流を測定する場の送電線との絶縁が簡易となる変
流変成器が考えられる。また、本発明に用いる磁
気検知素子は小形軽量であることから据付に際し
従来の変流変成器に比較して、機械的強度も要求
されないという利点もある。さらに、本発明の原
理から明らかな様に測定磁界が大なる場合に、磁
界印加コイルLfの巻数を増加するか、磁界印加
コイルLfに印加する基準電流源1の電圧を上昇
させること等により容易に対処できる特長を有し
ている。
As an example of the use of this device, as shown in FIG. 13, the magnetic field H Since B can be measured without contact, a current transformer can be considered, which makes it easy to insulate from the power transmission line, especially when measuring the current of a high-voltage power transmission line. Furthermore, since the magnetic sensing element used in the present invention is small and lightweight, it has the advantage that mechanical strength is not required during installation compared to conventional current transformers. Furthermore, as is clear from the principle of the present invention, when the measured magnetic field is large, it is possible to increase the number of turns of the magnetic field application coil L f or increase the voltage of the reference current source 1 applied to the magnetic field application coil L f . It has the advantage of being easier to deal with.

以上詳細に説明のように、本発明によれば、測
定値の読み取りは、磁気検知素子から発生するパ
ルス状の電圧を検知した時の基準電源の出力値を
読み取ればよいため、測定点と読み取の場所が離
れていようとも外来雑音等の影響は受け難く、ま
た、磁気検知素子の基準磁界発生コイルの巻数を
変化することで、基準電源の電圧が調整可能とな
るため、外来雑音等が多い場合には、基準電源の
電圧を上昇させて、測定の誤差を軽微とすること
が可能となる。さらに、キユリー温度の高い磁性
材料と、巻線用として耐熱絶縁銅線を使用して磁
気検知素子を構成すれば、200℃程度の環境にお
ける磁気検知も可能となる。さらに、本磁気測定
装置は、きわめて簡易に構成できることは、大き
な特長である。
As described in detail above, according to the present invention, the measurement value can be read simply by reading the output value of the reference power source when the pulse-like voltage generated from the magnetic sensing element is detected. Even if the location is far away, it is unlikely to be affected by external noise, and the voltage of the reference power supply can be adjusted by changing the number of turns of the reference magnetic field generating coil of the magnetic sensing element, so there is a lot of external noise. In such cases, it is possible to increase the voltage of the reference power supply to minimize measurement errors. Furthermore, if the magnetic sensing element is constructed using a magnetic material with a high Curie temperature and a heat-resistant insulated copper wire for the winding, magnetic sensing can be performed in an environment of about 200°C. Furthermore, a great feature of this magnetic measurement device is that it can be configured extremely simply.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明に用いる磁性体の磁化曲線の例
を示す特性図、第2図は本発明に用いる磁性体と
これに巻装した検知コイルを示す斜視図、第3図
a,bは第2図の構成の検知コイルにおける磁束
の変化と検知出力の例を示す図、第4図は本発明
に用いるしきい値回路の例を示す回路図、第5図
a,b,cは本発明装置における外部磁界と印加
磁界の変化の一例を示す波形図、第6図は本発明
に用いる磁界印加コイルの形状例を示す断面略
図、第7図は本発明の実施例を示す接続図、第8
図は本発明に用いる磁気検知素子の外観図、第9
図は本発明装置における基準電流の一抽出例を示
す回路図、第10図は本発明に用いるレベル抽出
保持回路の一例を示す回路図、第11図は本発明
に用いるHC分補正回路の一例を示す回路図、第
12図a,b,cは本発明装置の各部動作波形
図、第13図は本発明装置の具体的使用例を示す
装置図である。
Fig. 1 is a characteristic diagram showing an example of the magnetization curve of the magnetic material used in the present invention, Fig. 2 is a perspective view showing the magnetic material used in the present invention and a detection coil wound around it, and Fig. 3 a and b are Fig. 2 is a diagram showing an example of changes in magnetic flux and detection output in the detection coil configured as shown in Fig. 4. Fig. 4 is a circuit diagram showing an example of a threshold circuit used in the present invention. A waveform diagram showing an example of changes in the external magnetic field and applied magnetic field in the device of the invention, FIG. 6 is a cross-sectional schematic diagram showing an example of the shape of the magnetic field applying coil used in the invention, and FIG. 7 is a connection diagram showing an embodiment of the invention. 8th
Figure 9 is an external view of the magnetic sensing element used in the present invention.
Fig. 10 is a circuit diagram showing an example of the reference current extraction in the device of the present invention, Fig. 10 is a circuit diagram showing an example of the level extraction/holding circuit used in the present invention, and Fig. 11 is a circuit diagram showing an example of the level extraction / holding circuit used in the present invention. A circuit diagram showing an example, FIGS. 12a, b, and c are operation waveform diagrams of each part of the device of the present invention, and FIG. 13 is a device diagram showing a specific example of use of the device of the present invention.

Claims (1)

【特許請求の範囲】[Claims] 1 磁性体の外周に少なくとも第1のコイルと第
2のコイルを配置した磁気感応検知素子と、該第
1のコイルに前記磁性体を磁気飽和させる以上の
既知電流を印加するための基準電流源と、前記第
2のコイルに接続された該第2のコイルの出力レ
ベルが予め定めた一定値以上になつた時に検知出
力を出すしきい値回路と、該検知出力が得られた
時の前記既知電流の瞬時値を取り出すためのレベ
ル抽出保持回路とを備えて、検知すべき磁界が印
加された前記磁気感応検知素子の前記磁性体が前
記基準電流源からの前記既知電流を前記第1のコ
イルに印加することにより飽和せしめられ、次に
該基準電流源の出力を変化し該磁気感応検知素子
に逆向の磁界を印加し、該磁気感応検知素子の前
記磁性体を逆飽和せしめるとき前記第2のコイル
から前記検知出力を発生せしめ、この検知出力を
検出した時の前記既知電流の瞬時値を前記レベル
抽出保持回路により順次抽出保持することによ
り、該被測定磁界の瞬時値に比例した測定出力を
得るように構成した磁気測定装置。
1. A magnetically sensitive sensing element having at least a first coil and a second coil arranged around the outer periphery of a magnetic material, and a reference current source for applying a known current to the first coil that is greater than or equal to magnetically saturating the magnetic material. and a threshold circuit that outputs a detection output when the output level of the second coil connected to the second coil exceeds a predetermined value; a level extraction and holding circuit for extracting an instantaneous value of the known current, the magnetic body of the magnetically sensitive sensing element to which a magnetic field to be detected is applied, converts the known current from the reference current source into the first When the magnetic body of the magnetic sensing element is reversely saturated by applying a magnetic field to the magnetic sensing element by changing the output of the reference current source and applying a magnetic field in the opposite direction to the magnetic sensing element. The detection output is generated from the second coil, and the instantaneous value of the known current when this detection output is detected is sequentially extracted and held by the level extraction and holding circuit, thereby making a measurement proportional to the instantaneous value of the magnetic field to be measured. A magnetic measuring device configured to obtain an output.
JP15949278A 1978-12-21 1978-12-21 Magnetism measuring unit Granted JPS5583861A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15949278A JPS5583861A (en) 1978-12-21 1978-12-21 Magnetism measuring unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15949278A JPS5583861A (en) 1978-12-21 1978-12-21 Magnetism measuring unit

Publications (2)

Publication Number Publication Date
JPS5583861A JPS5583861A (en) 1980-06-24
JPS6138418B2 true JPS6138418B2 (en) 1986-08-29

Family

ID=15694939

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15949278A Granted JPS5583861A (en) 1978-12-21 1978-12-21 Magnetism measuring unit

Country Status (1)

Country Link
JP (1) JPS5583861A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6121772A (en) * 1996-11-13 2000-09-19 Shih; Kelvin Magnetic sensor

Also Published As

Publication number Publication date
JPS5583861A (en) 1980-06-24

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