JPS614290A - Distributed feedback type semiconductor laser - Google Patents
Distributed feedback type semiconductor laserInfo
- Publication number
- JPS614290A JPS614290A JP59124672A JP12467284A JPS614290A JP S614290 A JPS614290 A JP S614290A JP 59124672 A JP59124672 A JP 59124672A JP 12467284 A JP12467284 A JP 12467284A JP S614290 A JPS614290 A JP S614290A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- distributed feedback
- mode
- lambda
- type semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 230000000737 periodic effect Effects 0.000 claims abstract description 19
- 238000005253 cladding Methods 0.000 claims description 9
- 230000010355 oscillation Effects 0.000 abstract description 6
- 230000010363 phase shift Effects 0.000 abstract description 6
- 238000002310 reflectometry Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 description 7
- 239000013307 optical fiber Substances 0.000 description 4
- 238000000992 sputter etching Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000003776 cleavage reaction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000007017 scission Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 240000002329 Inga feuillei Species 0.000 description 1
- 238000011000 absolute method Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- UIZLQMLDSWKZGC-UHFFFAOYSA-N cadmium helium Chemical compound [He].[Cd] UIZLQMLDSWKZGC-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、単一波長で発振する分布帰還型半導体レーザ
に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a distributed feedback semiconductor laser that oscillates at a single wavelength.
（従来技術とその問題点）
光半導体素子及び光フアイバ通信の実用化が開始されて
いる。しかし、光フアイバ通信の特性を充分に利用する
ためには、単一波長で安定に発振する半導体レーザが必
要である。単一波長で安定に発振出来ない半導体レーザ
を光フアイバ通信に用いると、光ファイバの材料分散に
よシ伝送可能な帯域が狭くなった夛、波長が換わる時大
きな雑音を発生し、伝送系の信号対雑音比が劣化し、伝
送品質の低下を招いたシする。このような理由から、単
一波長で安定に発振する半導体レーザの実現金目的とし
て、分布帰還型半導体レーザが研究されている。分布帰
還型半導体レーザは、通常の半導体レーザが共振器とし
て結晶のへき開面を用いるのに対し、活性層の近傍もし
くは活性層に設けられた凹凸によるブラッグ反射器を用
いている〇このため１通常の半導体レーザは多波長で発
振しやすいが、分布帰還型半導体レーザはブラッグ反射
器によって選択された波長だけで発振することが出来る
口
このような凹凸が周期的に形成され゛たブラッグ反射器
を持つ分布帰還型半導体レーザは、エレクトロニクス・
レターズ（１９８３年、１９巻、１０号、Ｐ３６２−３
６３）に記載されているごとく。(Prior art and its problems) Practical use of optical semiconductor devices and optical fiber communications has begun. However, in order to fully utilize the characteristics of optical fiber communication, a semiconductor laser that stably oscillates at a single wavelength is required. When a semiconductor laser that cannot stably oscillate at a single wavelength is used in optical fiber communications, the transmission band becomes narrow due to material dispersion of the optical fiber, and large noise is generated when the wavelength changes, causing problems in the transmission system. The signal-to-noise ratio deteriorates, leading to a decline in transmission quality. For these reasons, distributed feedback semiconductor lasers are being researched with the aim of realizing a semiconductor laser that stably oscillates at a single wavelength. Distributed feedback semiconductor lasers use Bragg reflectors formed by unevenness near or in the active layer, whereas normal semiconductor lasers use crystal cleavage planes as resonators.For this reason, 1. Semiconductor lasers tend to oscillate at multiple wavelengths, but distributed feedback semiconductor lasers can oscillate only at wavelengths selected by a Bragg reflector. Distributed feedback semiconductor lasers with
Letters (1983, Vol. 19, No. 10, P362-3
As stated in 63).
分布帰還モードで発振はするが、最も低いしきい値で発
振する分布帰還モードが２つ（ＴＩ、とＴＢ□１）ある
ため、この２つのモードが同時発振したり、又はたとえ
単一モードで発振しても温度や動作電流を変化させると
モードが移ってしまうという問題、すなわち単一波長で
安定に発振しないという問題があった０との問題全解決
する手段としては、周期的な凹凸の中央付近に１７４周
期の位相シフトＴＥ＋１モードの波長が一致し、単一波
長で安定に発振することがアイ・イー・イー・イー・ジ
ャーナル・オプ・カンタム・エレクトロニクス（１９７
５年、ＱＢ−１１巻、４号、１５４頁〜１６１頁）に記
載されている。しかし、これを実現するためには、周期
的な凹凸の位相をレーザの中央付近で変−イ、。ヶ、、
わ、イヶ、オ、 Ｖ−ｆ。エエヶヨいえフォトリソグラ
フィー法では形成出来ない。この方法では、等間隔にし
か凹凸を形成出来ない。電子ンーム露光で上記位相シフ
トを与える方法が考えられるが、電１子ビームでは２０
００Ｘ程度の精度が限界で、１周期（約２０００１）の
１／４（約５００Ｘ）の精度で周期的な凹凸を形成する
ことは困難である。従って従来の分布帰還型半導体レー
ザは単一波長で安定に発振しないという問題があったＯ
（発明の目的）
本発明は、このような従来の欠点を除去せしめて、単一
波長で安定に発振する分布帰還型半導体レーザを提供す
ることにある。It oscillates in distributed feedback mode, but since there are two distributed feedback modes (TI and TB□1) that oscillate at the lowest threshold, these two modes may oscillate simultaneously, or even in a single mode. The problem with 0 was that even if it oscillated, the mode would shift when the temperature or operating current was changed, that is, it would not oscillate stably at a single wavelength.As a way to completely solve the problem, it is possible to solve the problem of periodic unevenness. IEI Journal of Quantum Electronics (197
5, QB-11, No. 4, pp. 154-161). However, in order to achieve this, the phase of the periodic irregularities must be changed near the center of the laser. Wow...
I, I, O, V-f. Unfortunately, it cannot be formed using photolithography. With this method, unevenness can only be formed at equal intervals. One possible method is to provide the above phase shift using electron beam exposure, but with a single electron beam, the
The limit is accuracy of approximately 00X, and it is difficult to form periodic irregularities with an accuracy of 1/4 (approximately 500X) of one period (approximately 20001). Therefore, the conventional distributed feedback semiconductor laser has the problem of not stably oscillating at a single wavelength. An object of the present invention is to provide a distributed feedback semiconductor laser that has the following characteristics.
（発明の構成）
本発明は２つのクラッド層の間にクラッド層よりも屈折
率の低い導波路層を少なくとも有し、かつ前記導波路層
の主面の少なくとも１つの面に周期的な凹凸形状が形成
された分布帰還型半導体レーザにおいて、前記分布帰還
型半導体レーザの両端面のうちの１つの面が、前記周期
的′な凹凸の凸部の頂点もしくは凹部の最低点から凹凸
周期の１／６から１／１０の位置に形成されたことに特
徴がある。(Structure of the Invention) The present invention has at least a waveguide layer having a refractive index lower than that of the cladding layer between two cladding layers, and has a periodic uneven shape on at least one main surface of the waveguide layer. In the distributed feedback semiconductor laser in which one of the two end faces of the distributed feedback semiconductor laser is formed, one surface of the distributed feedback semiconductor laser is located within 1/1/2 of the period of the irregularities from the apex of the convex part or the lowest point of the concave part of the periodic irregularities. It is distinctive in that it is formed at a position 1/10 from 6.
（構成の詳細カ説明）
本発明は、上述の構成管とることにょル従来技術の問題
点を解決した◎まず本発明による分布帰還型半導体レー
ザの両端面のうちの１つの面が、前記周期的な凹凸の凸
部の頂点もしくは凹部の最低点から凹凸周期の＃′！ｔ
’ｌ’ｌ／８の位置に形成、されているため、この端面
で反射するモードは１７４周期の位相シフトを受ける。(Detailed explanation of the structure) The present invention solves the problems of the prior art with regard to the above-mentioned structure. #' of the unevenness period from the top of the convex part or the lowest point of the concave part of the unevenness! t
Since it is formed at the position 'l'l/8, the mode reflected at this end face undergoes a phase shift of 174 cycles.
そのためＴＥ −１ニードとＴＦｔ＋１モードとの波長
が一致し、単一波長で発振しやすくなる０又、前記端面
に反射膜が形成京れていると上記の効果はよシ顕著にな
シ、安定に単一波長で発振する。前記端面の位置が、周
期的な凹凸の凹部頂点もしくは凹部の最低点から凹凸周
期の１７６から１／１０の範囲であればたとえ正確に１
／８でなくとも、Ｔｌ−１モードとＴＥ＋１モードの発
振波長の差はわずかであシ、モードの引き込み現象で充
分安定に単一波長で発振する。Therefore, the wavelengths of the TE-1 needle and the TFt+1 mode match, making it easier to oscillate at a single wavelength.Also, if a reflective film is formed on the end face, the above effect becomes more noticeable and stable. oscillates at a single wavelength. Even if the position of the end face is within a range of 176 to 1/10 of the periodic period from the top of the recess or the lowest point of the periodic recess, it may be exactly 1
Even if it is not /8, the difference in the oscillation wavelength between the Tl-1 mode and the TE+1 mode is small, and the mode oscillation is sufficiently stable at a single wavelength due to the mode attraction phenomenon.
（実施例）
以下本発明の実施例について図面を参照して詳細に説明
する０図は本発明の一実施例を示す断面図で、導波路層
１３とｎ型クラッド層として機能する基板１１の界面１
２が周期的な凹凸形状を有している。また、導波路層１
３の上には注入され表キャリヤが再結合発光する活性層
１４を有し、その上にｐ型クラッド層１５がある。この
ような構造は、通常の分布帰還型半導体レーザにおいて
従来から用いられている０従来の分布帰還型半導体レー
ザでは、端面の位置は周期的な凹凸に対し無関係であっ
たが、本実施例では左の端面の位置が、周期的な凹凸の
凸部の頂点１７からＡｌ８（ここでＡは凹凸の周期の長
さで、本実施例では２４００Ｘとしたので、Ａｌ１はは
は３００Ｘとなる）の位置に制御されて形成されている
０さらにこの端面における反射率を高めるために反射膜
１６が形成されているコこのような端面な持つ分布帰還
−型半導体レーザは、左端部においてＡｌ１の位相シ
フトを受け、ここでの反射率が反射膜１６によりて高め
られているため、中心部でＡｌ１の位相シフトを有する
分布帰還型半導体レーザと同じ導波モードとなる。よっ
てＴＥ−、モードとＴＢ＋１モードは同じ周波数となシ
、単一波長で安定に発振することが出来る。本実施例に
おいて、基板１１にはｎ型ＩｎＰが用いられ、導波路層
１３にはエネルギーギャップが０．９５ｅＶのＩｎＧａ
ＡｓＰ Ｊ＠が、活性層１４にはエネルギーギャップが
０．８ｅＶのＩｎＧａＡｓＰ層が、ｐ型クラッド層１５
にはｐ型ＩｎＰがそれぞれ用いられた。４！１層の層厚
は、導波路層１３で０．１５μｍ、活性層１４で０．１
２ｐｍｓ ｐ型クラッド層で１２μｍとした０又周期的
な凹凸形状１２け、ｎ型ＩｎＰで出来た基板１１上に、
通常行なわれるレーザの干渉縞を利用したフォトリソグ
ラフィー法で得た。フォトレジストにはＡＺ−１３５０
，レーザにヘリウム・カドミウムレーザ管用いた。そし
て前述したように、干渉縞の間隔を２４００Ｘに選んだ
。(Example) Examples of the present invention will be described below in detail with reference to the drawings. Figure 0 is a cross-sectional view showing an example of the present invention, in which a waveguide layer 13 and a substrate 11 functioning as an n-type cladding layer are formed. Interface 1
2 has a periodic uneven shape. In addition, the waveguide layer 1
There is an active layer 14 on which surface carriers are injected and emit light by recombination, and a p-type cladding layer 15 is provided on top of the active layer 14 . Such a structure has been conventionally used in normal distributed feedback semiconductor lasers.In conventional distributed feedback semiconductor lasers, the position of the end face is unrelated to periodic irregularities, but in this example, The position of the left end face is from the apex 17 of the convex part of the periodic concaves and convexes to Al8 (here, A is the length of the period of the concavities and convexities, which is 2400X in this example, so Al1 is 300X). Furthermore, a reflective film 16 is formed to increase the reflectance at this end facet.The distributed feedback type semiconductor laser has a phase shift of Al1 at the left end part. Since the reflectance here is increased by the reflective film 16, the waveguide mode becomes the same as that of a distributed feedback semiconductor laser having a phase shift of Al1 at the center. Therefore, the TE- mode and the TB+1 mode can stably oscillate at the same frequency and at a single wavelength. In this example, n-type InP is used for the substrate 11, and InGa with an energy gap of 0.95 eV is used for the waveguide layer 13.
The active layer 14 is an InGaAsP layer with an energy gap of 0.8 eV, and the p-type cladding layer 15 is AsP J@.
p-type InP was used for each. 4! The layer thickness of the first layer is 0.15 μm for the waveguide layer 13 and 0.1 μm for the active layer 14.
On a substrate 11 made of n-type InP, a 2pms p-type cladding layer with 12 micrometers of 0 or periodic unevenness was formed.
It was obtained using a commonly used photolithography method that utilizes laser interference fringes. AZ-1350 for photoresist
, a helium-cadmium laser tube was used as the laser. As mentioned above, the interval between the interference fringes was chosen to be 2400X.
−じ間２１・５引゛５“″１発振すＬｖ−ｆｐ長の１次
回折間隔に対応している０左の端面の位置を、周期的な
凹凸の凸部の頂点１７からＡｌ１の位置に形成するのに
は、イオンミリング法を用いた０分布帰還レーザを発振
闇値電流よシやや低い状態で通電状態にしておくと、各
分布帰還モードが同時に発振することが観測される口そ
の時、ＴＥ、モードとＴＢ−１モードの波長間隔を測定
しながらイオンミリング法で端面を削って行ったり任意
の位置にへき関された端面の位置から、ＴＥ１モードと
ＴＥ−□モードが重なる迄、イオンミリ〉′グを行なっ
た。この状態全電子顕微鏡で観察すると、丁度凸部の頂
点１７もしくは凹部の最低点１８からＡｌ１の位置にな
りていることが確かめられた。このようにして形成され
た端面の上に、誘電体反射膜１６ｆｔ通ｎ行なわれてい
る蒸着法で形成した。- The position of the 0 left end face corresponding to the first-order diffraction interval of Lv-fp length for one oscillation is set at the Al1 position from the apex 17 of the convex part of the periodic unevenness. In order to form a zero-distribution feedback laser using the ion milling method, it is observed that each distributed feedback mode oscillates simultaneously when the zero-distribution feedback laser is energized at a state slightly lower than the oscillation dark value current. , while measuring the wavelength interval between the TE mode and the TB-1 mode, the end face is milled using the ion milling method, or from the position of the end face that is connected to an arbitrary position, until the TE1 mode and the TE-□ mode overlap. Ion millimeter analysis was performed. When this state was observed with an all-electron microscope, it was confirmed that the position was exactly Al1 from the apex 17 of the convex part or the lowest point 18 of the concave part. On the end face thus formed, a 16 ft dielectric reflective film was formed by a conventional vapor deposition method.
上記−μ絶倒では、分布帰還型モードを観測しながらイ
オンミリングを行なったが、本発明は仁の方法に限定さ
れないの社明らかである。へき開位置をあらかじめ観測
しておき、後でイオンミリングを適切な時間だけ行なっ
ても良い。Although ion milling was performed while observing the distributed feedback mode in the above-mentioned -μ absolute method, it is clear that the present invention is not limited to Jin's method. The cleavage position may be observed in advance and ion milling may be performed later for an appropriate amount of time.
上記実施例では、誘電体反射膜を用いたが、金属膜を用
いても良い。又１反射膜を形成しなくても単一波長で発
振しやすくなる効果は得られる。In the above embodiment, a dielectric reflective film is used, but a metal film may also be used. Furthermore, the effect of facilitating oscillation at a single wavelength can be obtained even without forming one reflective film.
上記実施例では、１５５μｍの波長で発振する分布帰還
型半導体レーザについて述べられたが、この波長には特
に制限を受けず、１．３μｍや１２μｍで発振するＩｎ
ＧａＡｓＰ ／ ＩｎＰ系でも良く、又０．８ミクロン
帯で発振するＡＩ！ＧａＡｓ／（）ａＡ、ｓ系でも良い
。In the above embodiment, a distributed feedback semiconductor laser that oscillates at a wavelength of 155 μm was described, but there is no particular restriction on this wavelength, and an In
GaAsP/InP system is also suitable, and AI that oscillates in the 0.8 micron band! A GaAs/()aA,s system may also be used.
上記実施例では、導波路層１３が活性層１４の下にあっ
たが、上にあっても良く、又両１１１！ｌにあっても良
い。In the above embodiment, the waveguide layer 13 was below the active layer 14, but it may also be above the active layer 14, or both 111! It may be in l.
（発明の効果）
本発明による分布帰還型半導体レーザは、反射率の高い
端面が周期的な凹凸の凸部の頂点もしくは凹部の最低点
からＡ／６〜Ａ／１０の所に形成されているため、 Ｔ
Ｂ−□モードとＴＥ＋１モードが同一波長となり、単一
波長で安定に発振するレーザな得ることが出来た。(Effects of the Invention) In the distributed feedback semiconductor laser according to the present invention, the end face with high reflectance is formed at a distance of A/6 to A/10 from the top of the convex portion or the lowest point of the concave portion of the periodic unevenness. Because, T
The B-□ mode and the TE+1 mode have the same wavelength, making it possible to obtain a laser that stably oscillates at a single wavelength.
図は本発明の一実施例を説明する図である。図において
、
１１・・・ＩｎＰ基板、１２・・・周期的凹凸界面、１
３− ＩｎＧａＡｓＰ導波路層、１ ’４ ・” Ｉｎ
ＧａＡｓＰ活性層、１５・・・ｐ型ＩｎＰクラッド層、
１６・・・反射膜、１７・・・凸部の頂点、１８・・・
凹部の最低点をそれぞれ示すＯ
文理人弁理士 内原 晋The figure is a diagram illustrating an embodiment of the present invention. In the figure, 11...InP substrate, 12... Periodic uneven interface, 1
3- InGaAsP waveguide layer, 1′4・”In
GaAsP active layer, 15... p-type InP cladding layer,
16... Reflective film, 17... Vertex of convex portion, 18...
O indicates the lowest point of the concave portion Susumu Uchihara, literary patent attorney
Claims (1)
率の低い導波路層を少なくとも有し、かつ前記導波路層
の主面に周期的な凹凸形状が形成された分布帰還型半導
体レーザにおいて、前記分布帰還型半導体レーザの両端
面のうちの１つの面が、前記周期的な凹凸の凸部の頂点
もしくは凹部の最低点から凹凸周期の１／６から１／１
０の位置に形成されたことを特徴とする分布帰還型半導
体レーザ。(1) In a distributed feedback semiconductor laser having at least a waveguide layer having a lower refractive index than the cladding layer between two claddings, and in which a periodic uneven shape is formed on the main surface of the waveguide layer. , one surface of the both end faces of the distributed feedback semiconductor laser is within a range of 1/6 to 1/1 of the period of the periodic unevenness from the apex of the convex portion or the lowest point of the concave portion of the periodic unevenness.
A distributed feedback semiconductor laser characterized in that it is formed at a zero position.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59124672A JPS614290A (en) | 1984-06-18 | 1984-06-18 | Distributed feedback type semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59124672A JPS614290A (en) | 1984-06-18 | 1984-06-18 | Distributed feedback type semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS614290A true JPS614290A (en) | 1986-01-10 |
Family
ID=14891201
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59124672A Pending JPS614290A (en) | 1984-06-18 | 1984-06-18 | Distributed feedback type semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS614290A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0252479A (en) * | 1988-08-16 | 1990-02-22 | Mitsubishi Kasei Corp | Etched-mirror type compound semiconductor laser device |
| US4952019A (en) * | 1988-10-27 | 1990-08-28 | General Electric Company | Grating-coupled surface-emitting superluminescent device |
-
1984
- 1984-06-18 JP JP59124672A patent/JPS614290A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0252479A (en) * | 1988-08-16 | 1990-02-22 | Mitsubishi Kasei Corp | Etched-mirror type compound semiconductor laser device |
| US4952019A (en) * | 1988-10-27 | 1990-08-28 | General Electric Company | Grating-coupled surface-emitting superluminescent device |
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