JPS6155271B2 - - Google Patents
Info
- Publication number
- JPS6155271B2 JPS6155271B2 JP56042942A JP4294281A JPS6155271B2 JP S6155271 B2 JPS6155271 B2 JP S6155271B2 JP 56042942 A JP56042942 A JP 56042942A JP 4294281 A JP4294281 A JP 4294281A JP S6155271 B2 JPS6155271 B2 JP S6155271B2
- Authority
- JP
- Japan
- Prior art keywords
- conductive film
- solar cell
- film
- substrate
- series
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/95—Circuit arrangements
- H10F77/953—Circuit arrangements for devices having potential barriers
- H10F77/955—Circuit arrangements for devices having potential barriers for photovoltaic devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
- H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】
本発明は基板上に設けられた薄膜半導体太陽電
池素子を直列接続してなる太陽電池装置に関す
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a solar cell device in which thin film semiconductor solar cell elements provided on a substrate are connected in series.
光電変換活性領域としてpn接合あるいはシヨ
ツトキー障壁のような接合を有する例えばシリコ
ンからなる半導体薄膜の両面に電極を備えて基板
上に配置した太陽電池は、日光あるいは電灯光の
電気エネルギーへの変換用として注目されてい
る。しかしこの太陽電池は発生する起電力が低い
ため電源として利用するためには複数の素子を直
列接続しなければならない。このような直列接続
した太陽電池素子のうちの一つあるいは複数の素
子が影となるなどにより起電力を生じない時、そ
の素子は他の素子の起電力により逆バイヤス状態
となり、素子の破壊に至ることがある。これを防
ぐために第1図に示すように各太陽電池素子1に
逆並列ダイオード2を接続して素子1に逆バイヤ
スがかからないようにするか、あるいは第2図に
示すようにそのうちの1素子が影になつても逆バ
イヤスによつて破壊しない程度の直列数の素子1
に対して1個のダイオード2を逆並列接続し、こ
のような素子をさらに直列接続することが行われ
る。このダイオード2は直列接続された素子の両
端間にノイズが加わる場合にも、逆バイヤスが加
わる確率を低め信頼性を向上させる。しかしこの
ためにはダイオード2を別個に準備し、太陽電池
装置組立時にこれを配線する手数を必要とする。 A solar cell is a semiconductor thin film made of silicon, which has a junction such as a pn junction or a Schottky barrier as a photoelectric conversion active region, and is arranged on a substrate with electrodes on both sides. Attention has been paid. However, since this solar cell generates a low electromotive force, multiple elements must be connected in series in order to use it as a power source. When one or more of these solar cell elements connected in series does not generate an electromotive force due to shadows, etc., that element will be in a reverse bias state due to the electromotive force of the other elements, which may lead to destruction of the element. It may come to that. In order to prevent this, it is necessary to connect an anti-parallel diode 2 to each solar cell element 1 as shown in Fig. 1 so that no reverse bias is applied to the element 1, or as shown in Fig. 2, one of the elements The number of elements connected in series is 1 so that it will not be destroyed by reverse bias even if it is in the shadow.
One diode 2 is connected in antiparallel to each other, and such elements are further connected in series. This diode 2 reduces the probability that a reverse bias will be applied even when noise is applied between both ends of the series-connected elements, thereby improving reliability. However, for this purpose, it is necessary to prepare the diode 2 separately and to wire it at the time of assembling the solar cell device.
本発明はこの欠点を除き、簡単な方法で製作で
きる逆バイヤス阻止機能を備えた太陽電池装置を
提供することを目的とする。 It is an object of the present invention to eliminate this drawback and provide a solar cell device with a reverse bias blocking function that can be manufactured by a simple method.
この目的は、基板側から順に第1導電膜、接合
を有する半導体膜および第二導電膜を積層してな
る複数の太陽電池素子が同一基板上に間隙を介し
て配置され、基板および第一導電膜と第二導電膜
とのいずれかが光を透過する材料からなり、前記
複数の素子は、順にその第一導電膜を隣接する素
子の第二導電膜に接続することによつて全数が直
列接続され、一方の端の素子の第一導電膜と他方
の端の第二導電膜とが一つの端子に接続され、い
ずれかの端から所定の序数を経た素子の第二導電
膜が別の端子に接続されることによつて達成され
る。 The purpose of this is to arrange a plurality of solar cell elements formed by stacking a first conductive film, a semiconductor film having a bond, and a second conductive film in order from the substrate side on the same substrate with gaps between the substrate and the first conductive film. Either the film or the second conductive film is made of a material that transmits light, and the plurality of elements are connected in series by sequentially connecting the first conductive film to the second conductive film of an adjacent element. connected, the first conductive film of the element at one end and the second conductive film at the other end are connected to one terminal, and the second conductive film of the element passing through a predetermined ordinal number from either end is connected to another terminal. This is achieved by being connected to a terminal.
以下図を引用して本発明の実施例について説明
する。第3図において、基板となるガラス板3の
上には小さい間隙4を介して、例えばITO(イン
ジユウムすず酸化物)からなる透明導電膜5がス
パツタリングなどの方法で設けられている。次に
この間隙4を埋めるとともに透明導電膜5を被覆
する非晶質シリコン膜6が、例えばモノシランを
グロー放電中で分解させて堆積させるプラズマ
CVD法によつて小さい間隙7を介して設けられ
る。さらにこの間隙7を埋めるとともにシリコン
膜6を被覆する。例えばアルミニウム蒸着膜のよ
うな金属膜8を間隙を介して設ける。非晶質シリ
コン膜6は図示しないが基板3側から順次堆積さ
れたp層、i層、n層の3層からなつている。こ
のような膜6はよく知られているようにモノシラ
ン(SiH4)のグロー放電による分解により形成さ
れ、P形とするにはジボラン(B2H6)を、n形と
するにはフオスフイン(PH3)をそれぞれモノシ
ランに混合する。基板3、透明導電膜5を通して
光が入射した際、このpin接合により太陽電池の
光電変換が行われる。第3図のように構成するこ
とにより各太陽電池素子9は直列接続されるが、
その一方の端の素子91の透明導電膜51と他方
の端の素子92の金属膜82とを共通端子Aに接
続し、素子92の透明導電膜52すなわちその隣
りの素子93は金属膜83を別の端子Bに接続し
た時には第4図に示した等価図路に相当する接続
となる。すなわち素子91から素子93に至る直
列接続太陽電池に別の太陽電池素子92が逆並列
接続されたことになる。しかるに太陽電池素子に
おいて光電変換活性領域として働くpin接合は同
時に整流機能も持つているので、太陽電池素子9
2はダイオードとして働き、第2図に示した接続
と全く同様な状態となる。従つて直列接続する素
子9の数(第3、第4図の場合は8)をその内の
一つが影になつたときに残りの素子9の起電力に
より生ずる逆バイヤスに耐えられるように選定し
ておけば、このような太陽電池装置単位を直列に
接続して太陽電池モジユールおよびアレイを作成
した時にも他の単位によつて加わる逆バイヤスは
素子92によりバイパスされるので影になつた素
子が破壊することがない。 Embodiments of the present invention will be described below with reference to the drawings. In FIG. 3, a transparent conductive film 5 made of, for example, ITO (indium tin oxide) is provided on a glass plate 3 serving as a substrate with a small gap 4 in between by sputtering or the like. Next, an amorphous silicon film 6 that fills this gap 4 and covers the transparent conductive film 5 is formed by plasma depositing, for example, by decomposing monosilane in a glow discharge.
It is provided through a small gap 7 by the CVD method. Furthermore, this gap 7 is filled and the silicon film 6 is covered. For example, a metal film 8 such as an aluminum vapor-deposited film is provided with a gap therebetween. Although not shown, the amorphous silicon film 6 is made up of three layers, a p layer, an i layer, and an n layer, deposited sequentially from the substrate 3 side. As is well known, such a film 6 is formed by the decomposition of monosilane (SiH 4 ) by glow discharge, and diborane (B 2 H 6 ) is used to form a P-type film, and phosphine (SiH 4 ) is used to form an N-type film. PH 3 ) into the monosilane. When light enters through the substrate 3 and the transparent conductive film 5, photoelectric conversion of the solar cell is performed by this pin junction. By configuring as shown in FIG. 3, each solar cell element 9 is connected in series.
The transparent conductive film 51 of the element 91 at one end and the metal film 82 of the element 92 at the other end are connected to the common terminal A, and the transparent conductive film 52 of the element 92, that is, the element 93 next to it, When connected to another terminal B, the connection corresponds to the equivalent diagram shown in FIG. 4. That is, another solar cell element 92 is connected in antiparallel to the series-connected solar cells from element 91 to element 93. However, since the pin junction that acts as a photoelectric conversion active region in a solar cell element also has a rectifying function, the solar cell element 9
2 acts as a diode, and the connection is exactly the same as that shown in FIG. Therefore, the number of elements 9 connected in series (eight in the case of Figures 3 and 4) is selected so as to withstand the reverse bias caused by the electromotive force of the remaining elements 9 when one of them becomes a shadow. If this is done, even when solar cell modules and arrays are created by connecting such solar cell device units in series, the reverse bias applied by other units will be bypassed by the element 92, so that the shadowed element will be cannot be destroyed.
第3図における非晶質シリコン膜6が基板3側
から順次堆積されたn層、i層、p層からなると
きは、第5図に示した等価回路に相当する接続と
なる。 When the amorphous silicon film 6 in FIG. 3 consists of an n layer, an i layer, and a p layer deposited sequentially from the substrate 3 side, the connection corresponds to the equivalent circuit shown in FIG. 5.
素子92は太陽電池としての機能を持つので光
が入射すれば起電力を生じ、その極性は直列接続
素子に対した逆であるからこの素子を遮光するこ
とが有効である。 Since the element 92 has a function as a solar cell, it generates an electromotive force when light enters it, and since the polarity of the electromotive force is opposite to that of the series-connected elements, it is effective to shield this element from light.
素子92の代りに直列接続された複数の素子を
接続してもよい。この場合は端子Bは相当する序
数を経た素子と隣接電極との間の接続部から引出
される。これによつて逆並列接続ダイオードの阻
止できる逆バイアス電圧が向上し、それに応じて
光電変換のための太陽電池素子の直列数も増加で
きる。 The element 92 may be replaced by a plurality of elements connected in series. In this case, the terminal B is led out from the connection between the corresponding ordinal element and the adjacent electrode. This increases the reverse bias voltage that can be blocked by the anti-parallel connected diodes, and accordingly increases the number of solar cell elements connected in series for photoelectric conversion.
第3図においては、基板3にガラス板を用い、
光はガラス板3と透明導電膜5を透過してシリコ
ン薄膜6に入射するが、基板として一方の電極を
兼ねたステンレス鋼板のような金属板を用い、対
向電極としては透明導電膜を用いて光を基板と逆
の側から透明導電膜を通して入射させる太陽電池
においてはも同様に実施することができる。 In FIG. 3, a glass plate is used as the substrate 3,
Light passes through the glass plate 3 and the transparent conductive film 5 and enters the silicon thin film 6, but a metal plate such as a stainless steel plate is used as the substrate and serves as one electrode, and a transparent conductive film is used as the counter electrode. The same method can be applied to a solar cell in which light enters through a transparent conductive film from the side opposite to the substrate.
上の実施例は非晶質シリコンを用いた太陽電池
について述べたが、非晶質シリコンに限らず基板
上に堆積される多結晶シリコン薄膜を利用した太
陽電池においても同様に実施できる。またpin接
合あるいはpn接合の代りにシヨツトキー障壁を
形成し、その整流性を利用してもよい。 Although the above embodiment describes a solar cell using amorphous silicon, the present invention is not limited to amorphous silicon, and can be similarly implemented in a solar cell using a polycrystalline silicon thin film deposited on a substrate. Moreover, a Schottky barrier may be formed instead of a pin junction or a pn junction, and its rectification property may be utilized.
以上述べたように、本発明による太陽電池装置
は逆バイアス阻止のための逆並列接続ダイオード
として太陽電池素子自体を利用したもので、太陽
電池素子の製造の際に同時に逆並列接続ダイオー
ドを同一基板上につくり込むことができるのでほ
とんど余分の費用や手数を必要とせず、極めて経
済的である。 As described above, the solar cell device according to the present invention utilizes the solar cell element itself as an anti-parallel connected diode for blocking reverse bias. Since it can be built into the top, almost no extra cost or effort is required, making it extremely economical.
第1図、第2図は逆バイアス阻止用ダイオード
を接続した太陽電池の回路図、第3図は本発明の
一実施例を示す断面図、第4図、第5図はその等
価回路図である。
3:基板(ガラス板)、5,51,52:透明
導電膜、6:非晶質シリコン膜、8,82,8
3:金属膜、9,91,92,93:太陽電池素
子。
Figures 1 and 2 are circuit diagrams of a solar cell connected with a reverse bias blocking diode, Figure 3 is a sectional view showing an embodiment of the present invention, and Figures 4 and 5 are equivalent circuit diagrams. be. 3: Substrate (glass plate), 5, 51, 52: Transparent conductive film, 6: Amorphous silicon film, 8, 82, 8
3: Metal film, 9, 91, 92, 93: Solar cell element.
Claims (1)
導体膜および第二導電膜を積層してなる複数の太
陽電池素子が同一基板上に間隙を介して配置さ
れ、基板および第一導電膜と第二導電膜とのいず
れかが光を透過する材料からなり、前記複数の素
子は、順にその第一導電膜を隣接する素子の第二
導電膜に接続することによつて全数が直列に接続
され、一方の端の素子の第一導電膜と他方の端の
第二導電膜とが一つの端子に接続され、いずれか
の端から所定の序数を経た素子の第二導電膜が別
の端子に接続されたことを特徴とする太陽電池装
置。1 A plurality of solar cell elements formed by laminating a first conductive film, a semiconductor film having a junction, and a second conductive film in order from the substrate side are arranged on the same substrate with gaps between them, and the substrate, the first conductive film, and the second conductive film Any one of the two conductive films is made of a material that transmits light, and all of the plurality of elements are connected in series by sequentially connecting the first conductive film to the second conductive film of an adjacent element. , the first conductive film of the element at one end and the second conductive film at the other end are connected to one terminal, and the second conductive film of the element that has passed through a predetermined ordinal number from either end is connected to another terminal. A solar cell device characterized in that:
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56042942A JPS57157579A (en) | 1981-03-24 | 1981-03-24 | Solar battery device |
| US06/420,216 US4456782A (en) | 1981-03-20 | 1982-09-20 | Solar cell device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56042942A JPS57157579A (en) | 1981-03-24 | 1981-03-24 | Solar battery device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57157579A JPS57157579A (en) | 1982-09-29 |
| JPS6155271B2 true JPS6155271B2 (en) | 1986-11-27 |
Family
ID=12650060
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56042942A Granted JPS57157579A (en) | 1981-03-20 | 1981-03-24 | Solar battery device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57157579A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3307202A1 (en) * | 1983-03-01 | 1984-09-06 | Siemens AG, 1000 Berlin und 8000 München | SOLAR CELL MODULE |
| GB202004533D0 (en) | 2020-03-27 | 2020-05-13 | Power Roll Ltd | A two-terminal device |
-
1981
- 1981-03-24 JP JP56042942A patent/JPS57157579A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57157579A (en) | 1982-09-29 |
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