JPS6157332B2 - - Google Patents
Info
- Publication number
- JPS6157332B2 JPS6157332B2 JP56096315A JP9631581A JPS6157332B2 JP S6157332 B2 JPS6157332 B2 JP S6157332B2 JP 56096315 A JP56096315 A JP 56096315A JP 9631581 A JP9631581 A JP 9631581A JP S6157332 B2 JPS6157332 B2 JP S6157332B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature plasma
- torr
- low
- gas
- containing organic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000007789 gas Substances 0.000 claims description 42
- 238000009832 plasma treatment Methods 0.000 claims description 33
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 23
- 229920005989 resin Polymers 0.000 claims description 22
- 239000011347 resin Substances 0.000 claims description 22
- 229910052757 nitrogen Inorganic materials 0.000 claims description 19
- 150000002894 organic compounds Chemical class 0.000 claims description 18
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 17
- 150000003961 organosilicon compounds Chemical class 0.000 claims description 17
- 238000004381 surface treatment Methods 0.000 claims description 9
- 229910001872 inorganic gas Inorganic materials 0.000 claims description 7
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 4
- 125000003545 alkoxy group Chemical group 0.000 claims description 3
- 150000002430 hydrocarbons Chemical group 0.000 claims 7
- 239000004215 Carbon black (E152) Substances 0.000 claims 1
- 125000005843 halogen group Chemical group 0.000 claims 1
- 229930195733 hydrocarbon Natural products 0.000 claims 1
- 150000001282 organosilanes Chemical class 0.000 claims 1
- -1 ethyleneimine Chemical class 0.000 description 12
- 230000000694 effects Effects 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 8
- 238000011282 treatment Methods 0.000 description 8
- 125000001183 hydrocarbyl group Chemical group 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 6
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 6
- 238000000465 moulding Methods 0.000 description 6
- 150000002148 esters Chemical class 0.000 description 5
- VVJKKWFAADXIJK-UHFFFAOYSA-N Allylamine Chemical compound NCC=C VVJKKWFAADXIJK-UHFFFAOYSA-N 0.000 description 4
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 4
- 239000002216 antistatic agent Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 229920001577 copolymer Polymers 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 3
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical compound C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- CJZGTCYPCWQAJB-UHFFFAOYSA-L calcium stearate Chemical class [Ca+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O CJZGTCYPCWQAJB-UHFFFAOYSA-L 0.000 description 3
- 239000008116 calcium stearate Substances 0.000 description 3
- 235000013539 calcium stearate Nutrition 0.000 description 3
- XSDCTSITJJJDPY-UHFFFAOYSA-N chloro-ethenyl-dimethylsilane Chemical compound C[Si](C)(Cl)C=C XSDCTSITJJJDPY-UHFFFAOYSA-N 0.000 description 3
- 235000014113 dietary fatty acids Nutrition 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000000194 fatty acid Substances 0.000 description 3
- 229930195729 fatty acid Natural products 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- POPACFLNWGUDSR-UHFFFAOYSA-N methoxy(trimethyl)silane Chemical compound CO[Si](C)(C)C POPACFLNWGUDSR-UHFFFAOYSA-N 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 235000012424 soybean oil Nutrition 0.000 description 3
- 239000003549 soybean oil Substances 0.000 description 3
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 3
- 239000005051 trimethylchlorosilane Substances 0.000 description 3
- NXQMCAOPTPLPRL-UHFFFAOYSA-N 2-(2-benzoyloxyethoxy)ethyl benzoate Chemical compound C=1C=CC=CC=1C(=O)OCCOCCOC(=O)C1=CC=CC=C1 NXQMCAOPTPLPRL-UHFFFAOYSA-N 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- PRIUALOJYOZZOJ-UHFFFAOYSA-L 2-ethylhexyl 2-[dibutyl-[2-(2-ethylhexoxy)-2-oxoethyl]sulfanylstannyl]sulfanylacetate Chemical compound CCCCC(CC)COC(=O)CS[Sn](CCCC)(CCCC)SCC(=O)OCC(CC)CCCC PRIUALOJYOZZOJ-UHFFFAOYSA-L 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- IRIAEXORFWYRCZ-UHFFFAOYSA-N Butylbenzyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCC1=CC=CC=C1 IRIAEXORFWYRCZ-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical compound C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 description 2
- AFBPFSWMIHJQDM-UHFFFAOYSA-N N-methylaniline Chemical compound CNC1=CC=CC=C1 AFBPFSWMIHJQDM-UHFFFAOYSA-N 0.000 description 2
- 244000061176 Nicotiana tabacum Species 0.000 description 2
- 235000002637 Nicotiana tabacum Nutrition 0.000 description 2
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- WGQKYBSKWIADBV-UHFFFAOYSA-N benzylamine Chemical compound NCC1=CC=CC=C1 WGQKYBSKWIADBV-UHFFFAOYSA-N 0.000 description 2
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- PAFZNILMFXTMIY-UHFFFAOYSA-N cyclohexylamine Chemical compound NC1CCCCC1 PAFZNILMFXTMIY-UHFFFAOYSA-N 0.000 description 2
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- ZLNAFSPCNATQPQ-UHFFFAOYSA-N ethenyl-dimethoxy-methylsilane Chemical compound CO[Si](C)(OC)C=C ZLNAFSPCNATQPQ-UHFFFAOYSA-N 0.000 description 2
- 150000004665 fatty acids Chemical class 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 235000019198 oils Nutrition 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000004014 plasticizer Substances 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- XFNJVJPLKCPIBV-UHFFFAOYSA-N trimethylenediamine Chemical compound NCCCN XFNJVJPLKCPIBV-UHFFFAOYSA-N 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical compound [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 2
- ZBBLRPRYYSJUCZ-GRHBHMESSA-L (z)-but-2-enedioate;dibutyltin(2+) Chemical compound [O-]C(=O)\C=C/C([O-])=O.CCCC[Sn+2]CCCC ZBBLRPRYYSJUCZ-GRHBHMESSA-L 0.000 description 1
- QMMJWQMCMRUYTG-UHFFFAOYSA-N 1,2,4,5-tetrachloro-3-(trifluoromethyl)benzene Chemical compound FC(F)(F)C1=C(Cl)C(Cl)=CC(Cl)=C1Cl QMMJWQMCMRUYTG-UHFFFAOYSA-N 0.000 description 1
- BMVXCPBXGZKUPN-UHFFFAOYSA-N 1-hexanamine Chemical compound CCCCCCN BMVXCPBXGZKUPN-UHFFFAOYSA-N 0.000 description 1
- HJKLEAOXCZIMPI-UHFFFAOYSA-N 2,2-diethoxyethanamine Chemical compound CCOC(CN)OCC HJKLEAOXCZIMPI-UHFFFAOYSA-N 0.000 description 1
- GXVUZYLYWKWJIM-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanamine Chemical compound NCCOCCN GXVUZYLYWKWJIM-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- CASYTJWXPQRCFF-UHFFFAOYSA-N 2-chloroethyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)CCCl CASYTJWXPQRCFF-UHFFFAOYSA-N 0.000 description 1
- SGFSMOHWPOFZQW-UHFFFAOYSA-N 2-chloroethyl-dimethoxy-methylsilane Chemical compound CO[Si](C)(OC)CCCl SGFSMOHWPOFZQW-UHFFFAOYSA-N 0.000 description 1
- JPUCXJPPHJORGK-UHFFFAOYSA-N 2-chloroethyl-methoxy-dimethylsilane Chemical compound CO[Si](C)(C)CCCl JPUCXJPPHJORGK-UHFFFAOYSA-N 0.000 description 1
- WQMAANNAZKNUDL-UHFFFAOYSA-N 2-dimethylaminoethyl chloride Chemical compound CN(C)CCCl WQMAANNAZKNUDL-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- QZCLKYGREBVARF-UHFFFAOYSA-N Acetyl tributyl citrate Chemical compound CCCCOC(=O)CC(C(=O)OCCCC)(OC(C)=O)CC(=O)OCCCC QZCLKYGREBVARF-UHFFFAOYSA-N 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- NOWKCMXCCJGMRR-UHFFFAOYSA-N Aziridine Chemical compound C1CN1 NOWKCMXCCJGMRR-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- HTJDQJBWANPRPF-UHFFFAOYSA-N Cyclopropylamine Chemical compound NC1CC1 HTJDQJBWANPRPF-UHFFFAOYSA-N 0.000 description 1
- MQIUGAXCHLFZKX-UHFFFAOYSA-N Di-n-octyl phthalate Natural products CCCCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCCCC MQIUGAXCHLFZKX-UHFFFAOYSA-N 0.000 description 1
- PYGXAGIECVVIOZ-UHFFFAOYSA-N Dibutyl decanedioate Chemical compound CCCCOC(=O)CCCCCCCCC(=O)OCCCC PYGXAGIECVVIOZ-UHFFFAOYSA-N 0.000 description 1
- 229920002943 EPDM rubber Polymers 0.000 description 1
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 description 1
- 240000006240 Linum usitatissimum Species 0.000 description 1
- 235000004431 Linum usitatissimum Nutrition 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- GYCMBHHDWRMZGG-UHFFFAOYSA-N Methylacrylonitrile Chemical compound CC(=C)C#N GYCMBHHDWRMZGG-UHFFFAOYSA-N 0.000 description 1
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- YSMRWXYRXBRSND-UHFFFAOYSA-N TOTP Chemical compound CC1=CC=CC=C1OP(=O)(OC=1C(=CC=CC=1)C)OC1=CC=CC=C1C YSMRWXYRXBRSND-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 229920006311 Urethane elastomer Polymers 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- 229920002433 Vinyl chloride-vinyl acetate copolymer Polymers 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical class C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- UKLDJPRMSDWDSL-UHFFFAOYSA-L [dibutyl(dodecanoyloxy)stannyl] dodecanoate Chemical compound CCCCCCCCCCCC(=O)O[Sn](CCCC)(CCCC)OC(=O)CCCCCCCCCCC UKLDJPRMSDWDSL-UHFFFAOYSA-L 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 235000004279 alanine Nutrition 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 150000001336 alkenes Chemical group 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 125000000304 alkynyl group Chemical group 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- SHLNMHIRQGRGOL-UHFFFAOYSA-N barium zinc Chemical compound [Zn].[Ba] SHLNMHIRQGRGOL-UHFFFAOYSA-N 0.000 description 1
- AGXUVMPSUKZYDT-UHFFFAOYSA-L barium(2+);octadecanoate Chemical compound [Ba+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O AGXUVMPSUKZYDT-UHFFFAOYSA-L 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- ZFMQKOWCDKKBIF-UHFFFAOYSA-N bis(3,5-difluorophenyl)phosphane Chemical compound FC1=CC(F)=CC(PC=2C=C(F)C=C(F)C=2)=C1 ZFMQKOWCDKKBIF-UHFFFAOYSA-N 0.000 description 1
- FSIJKGMIQTVTNP-UHFFFAOYSA-N bis(ethenyl)-methyl-trimethylsilyloxysilane Chemical compound C[Si](C)(C)O[Si](C)(C=C)C=C FSIJKGMIQTVTNP-UHFFFAOYSA-N 0.000 description 1
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 1
- 125000004106 butoxy group Chemical group [*]OC([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000000480 butynyl group Chemical group [*]C#CC([H])([H])C([H])([H])[H] 0.000 description 1
- GWOWVOYJLHSRJJ-UHFFFAOYSA-L cadmium stearate Chemical compound [Cd+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O GWOWVOYJLHSRJJ-UHFFFAOYSA-L 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- YGZSVWMBUCGDCV-UHFFFAOYSA-N chloro(methyl)silane Chemical compound C[SiH2]Cl YGZSVWMBUCGDCV-UHFFFAOYSA-N 0.000 description 1
- RFBKJUCGQSIKOU-UHFFFAOYSA-N chloro-(2-chloroethynyl)-dimethylsilane Chemical compound C[Si](C)(Cl)C#CCl RFBKJUCGQSIKOU-UHFFFAOYSA-N 0.000 description 1
- ITKVLPYNJQOCPW-UHFFFAOYSA-N chloro-(chloromethyl)-dimethylsilane Chemical compound C[Si](C)(Cl)CCl ITKVLPYNJQOCPW-UHFFFAOYSA-N 0.000 description 1
- FDCBKHMYMQKXGF-UHFFFAOYSA-N chloro-methoxy-methylsilane Chemical compound CO[SiH](C)Cl FDCBKHMYMQKXGF-UHFFFAOYSA-N 0.000 description 1
- FPOSCXQHGOVVPD-UHFFFAOYSA-N chloromethyl(trimethoxy)silane Chemical compound CO[Si](CCl)(OC)OC FPOSCXQHGOVVPD-UHFFFAOYSA-N 0.000 description 1
- ZXZMFKUGAPMMCJ-UHFFFAOYSA-N chloromethyl-dimethoxy-methylsilane Chemical compound CO[Si](C)(CCl)OC ZXZMFKUGAPMMCJ-UHFFFAOYSA-N 0.000 description 1
- IGMQAYXTTRYCPZ-UHFFFAOYSA-N chloromethyl-ethoxy-dimethylsilane Chemical compound CCO[Si](C)(C)CCl IGMQAYXTTRYCPZ-UHFFFAOYSA-N 0.000 description 1
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical class OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- UQLDLKMNUJERMK-UHFFFAOYSA-L di(octadecanoyloxy)lead Chemical compound [Pb+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O UQLDLKMNUJERMK-UHFFFAOYSA-L 0.000 description 1
- 239000012975 dibutyltin dilaurate Substances 0.000 description 1
- KTQYJQFGNYHXMB-UHFFFAOYSA-N dichloro(methyl)silicon Chemical compound C[Si](Cl)Cl KTQYJQFGNYHXMB-UHFFFAOYSA-N 0.000 description 1
- JAYBZWYBCUJLNQ-UHFFFAOYSA-N dichloro-(chloromethyl)-methylsilane Chemical compound C[Si](Cl)(Cl)CCl JAYBZWYBCUJLNQ-UHFFFAOYSA-N 0.000 description 1
- YLJJAVFOBDSYAN-UHFFFAOYSA-N dichloro-ethenyl-methylsilane Chemical compound C[Si](Cl)(Cl)C=C YLJJAVFOBDSYAN-UHFFFAOYSA-N 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- VSYLGGHSEIWGJV-UHFFFAOYSA-N diethyl(dimethoxy)silane Chemical compound CC[Si](CC)(OC)OC VSYLGGHSEIWGJV-UHFFFAOYSA-N 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- BFCBDQWICHUSER-UHFFFAOYSA-N diethynyl-methyl-trimethylsilyloxysilane Chemical compound C[Si](C)(C)O[Si](C)(C#C)C#C BFCBDQWICHUSER-UHFFFAOYSA-N 0.000 description 1
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 1
- CVQVSVBUMVSJES-UHFFFAOYSA-N dimethoxy-methyl-phenylsilane Chemical compound CO[Si](C)(OC)C1=CC=CC=C1 CVQVSVBUMVSJES-UHFFFAOYSA-N 0.000 description 1
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 description 1
- AOJHDNSYXUZCCE-UHFFFAOYSA-N dimethylsilyloxy(trimethyl)silane Chemical compound C[SiH](C)O[Si](C)(C)C AOJHDNSYXUZCCE-UHFFFAOYSA-N 0.000 description 1
- HGQSXVKHVMGQRG-UHFFFAOYSA-N dioctyltin Chemical compound CCCCCCCC[Sn]CCCCCCCC HGQSXVKHVMGQRG-UHFFFAOYSA-N 0.000 description 1
- WEHWNAOGRSTTBQ-UHFFFAOYSA-N dipropylamine Chemical compound CCCNCCC WEHWNAOGRSTTBQ-UHFFFAOYSA-N 0.000 description 1
- JRBPAEWTRLWTQC-UHFFFAOYSA-N dodecylamine Chemical compound CCCCCCCCCCCCN JRBPAEWTRLWTQC-UHFFFAOYSA-N 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- MBGQQKKTDDNCSG-UHFFFAOYSA-N ethenyl-diethoxy-methylsilane Chemical compound CCO[Si](C)(C=C)OCC MBGQQKKTDDNCSG-UHFFFAOYSA-N 0.000 description 1
- JEWCZPTVOYXPGG-UHFFFAOYSA-N ethenyl-ethoxy-dimethylsilane Chemical compound CCO[Si](C)(C)C=C JEWCZPTVOYXPGG-UHFFFAOYSA-N 0.000 description 1
- NUFVQEIPPHHQCK-UHFFFAOYSA-N ethenyl-methoxy-dimethylsilane Chemical compound CO[Si](C)(C)C=C NUFVQEIPPHHQCK-UHFFFAOYSA-N 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- RSIHJDGMBDPTIM-UHFFFAOYSA-N ethoxy(trimethyl)silane Chemical compound CCO[Si](C)(C)C RSIHJDGMBDPTIM-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 235000004426 flaxseed Nutrition 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 150000002334 glycols Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- ALBYIUDWACNRRB-UHFFFAOYSA-N hexanamide Chemical compound CCCCCC(N)=O ALBYIUDWACNRRB-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- OCWMFVJKFWXKNZ-UHFFFAOYSA-L lead(2+);oxygen(2-);sulfate Chemical compound [O-2].[O-2].[O-2].[Pb+2].[Pb+2].[Pb+2].[Pb+2].[O-]S([O-])(=O)=O OCWMFVJKFWXKNZ-UHFFFAOYSA-L 0.000 description 1
- UMKARVFXJJITLN-UHFFFAOYSA-N lead;phosphorous acid Chemical compound [Pb].OP(O)O UMKARVFXJJITLN-UHFFFAOYSA-N 0.000 description 1
- 230000005923 long-lasting effect Effects 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 229940049920 malate Drugs 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N malic acid Chemical compound OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Chemical class 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- REQXNMOSXYEQLM-UHFFFAOYSA-N methoxy-dimethyl-phenylsilane Chemical compound CO[Si](C)(C)C1=CC=CC=C1 REQXNMOSXYEQLM-UHFFFAOYSA-N 0.000 description 1
- ADFPJHOAARPYLP-UHFFFAOYSA-N methyl 2-methylprop-2-enoate;styrene Chemical compound COC(=O)C(C)=C.C=CC1=CC=CC=C1 ADFPJHOAARPYLP-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000005048 methyldichlorosilane Substances 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- GBCKRQRXNXQQPW-UHFFFAOYSA-N n,n-dimethylprop-2-en-1-amine Chemical compound CN(C)CC=C GBCKRQRXNXQQPW-UHFFFAOYSA-N 0.000 description 1
- RKISUIUJZGSLEV-UHFFFAOYSA-N n-[2-(octadecanoylamino)ethyl]octadecanamide Chemical compound CCCCCCCCCCCCCCCCCC(=O)NCCNC(=O)CCCCCCCCCCCCCCCCC RKISUIUJZGSLEV-UHFFFAOYSA-N 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical class OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- DPBLXKKOBLCELK-UHFFFAOYSA-N pentan-1-amine Chemical compound CCCCCN DPBLXKKOBLCELK-UHFFFAOYSA-N 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 150000003014 phosphoric acid esters Chemical class 0.000 description 1
- 150000003021 phthalic acid derivatives Chemical class 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229920002285 poly(styrene-co-acrylonitrile) Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- BPJZKLBPJBMLQG-KWRJMZDGSA-N propanoyl (z,12r)-12-hydroxyoctadec-9-enoate Chemical compound CCCCCC[C@@H](O)C\C=C/CCCCCCCC(=O)OC(=O)CC BPJZKLBPJBMLQG-KWRJMZDGSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000002568 propynyl group Chemical group [*]C#CC([H])([H])[H] 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 150000003606 tin compounds Chemical class 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- HUZZQXYTKNNCOU-UHFFFAOYSA-N triethyl(methoxy)silane Chemical compound CC[Si](CC)(CC)OC HUZZQXYTKNNCOU-UHFFFAOYSA-N 0.000 description 1
- 125000005591 trimellitate group Chemical group 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- UHUUYVZLXJHWDV-UHFFFAOYSA-N trimethyl(methylsilyloxy)silane Chemical compound C[SiH2]O[Si](C)(C)C UHUUYVZLXJHWDV-UHFFFAOYSA-N 0.000 description 1
- XZZNDPSIHUTMOC-UHFFFAOYSA-N triphenyl phosphate Chemical compound C=1C=CC=CC=1OP(OC=1C=CC=CC=1)(=O)OC1=CC=CC=C1 XZZNDPSIHUTMOC-UHFFFAOYSA-N 0.000 description 1
- YFTHZRPMJXBUME-UHFFFAOYSA-N tripropylamine Chemical compound CCCN(CCC)CCC YFTHZRPMJXBUME-UHFFFAOYSA-N 0.000 description 1
- 229920001567 vinyl ester resin Polymers 0.000 description 1
- KAKZBPTYRLMSJV-UHFFFAOYSA-N vinyl-ethylene Natural products C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/62—Plasma-deposition of organic layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/14—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by electrical means
- B05D3/141—Plasma treatment
- B05D3/142—Pretreatment
- B05D3/144—Pretreatment of polymeric substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K10/00—Welding or cutting by means of a plasma
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
- C08J7/12—Chemical modification
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2327/00—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Derivatives of such polymers
- C08J2327/02—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Derivatives of such polymers not modified by chemical after-treatment
- C08J2327/04—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Derivatives of such polymers not modified by chemical after-treatment containing chlorine atoms
- C08J2327/06—Homopolymers or copolymers of vinyl chloride
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)
Description
本発明は塩化ビニル系樹脂成形品の表面処理方
法に関するものであり、特には塩化ビニル系樹脂
成形品の表面を低温プラズマ処理することにより
この成形品に耐久性、恒久性ある帯電防止性を付
与することを目的とするものである。
一般に、塩化ビニル系樹脂成形品は著しく帯電
し易いため、ほこり、じんあい等の付着により外
観の汚れがもたらされ、また蓄積した静電気によ
る人体への影響(電撃シヨツク)、火花放電等の
問題点を有している。
この帯電(静電気の蓄積)を防止するための方
法としては該成形品の表面に帯電防止剤を塗布す
るとかあるいは成形品製造の際に帯電防止剤を練
り込むなどの方法が知られているが、前者の塗布
する方法には速効的な効果が得られるが持久性に
乏しく、また塗布面がベトツクとかブロツキング
の問題点があり、他方後者の方法には持久性の点
では前者の方法よりもすぐれているが帯電防止の
効果が不十分で、これを補うために帯電防止剤の
添加量を増加すると成形品表面にベトツキ感が現
れ、ブルーミング、ブロツキング等の問題点を生
じるほか、耐熱性が低下し、加工性が悪くなり、
成形品表面が着色し汚れやすくなるという不利が
ある。
他方、塩化ビニル系樹脂成形品については、こ
の表面をヘリウム、アルゴン、窒素、酸素、一酸
化炭素などの無機ガスの低温プラズマで処理する
ことにより親水性を付与し、これにより帯電を抑
制する試みがなされているが、十分な効果を得る
ことはできない。
本発明者らは、かかる問題点を解決すべく、鋭
意研究を重ねた結果、本発明を完成したもので、
これは塩化ビニル系樹脂成形品の表面に対し、窒
素原子含有有機化合物の低温プラズマ処理および
有機けい素化合物の低温プラズマ処理、を施すこ
とを特徴とする塩化ビニル系樹脂成形品の表面処
理方法に関するものである。
この本発明の方法によれば、成形品はその本来
有する機械的強さ等を損われることなく表面特性
が改質され、前記窒素原子含有有機化合物の低温
プラズマ処理と有機けい素化合物の低温プラズマ
処理の相乗効果によつて一段と恒久性、耐久性に
すぐれた帯電防止性が付与されることが確認され
た。これはそれら両処理を行うことにより成形品
表面に極薄の改質層が形成され、この層は塩化ビ
ニル系樹脂に対して強固に結合する特徴があり、
またこの改質層の形成速度は成形品が他のポリマ
ーからなるものに比べて速く、それら両者の低温
プラズマ処理による効果が顕著に現れることによ
るものと考えられる。
以下本発明の方法を詳細に説明する。
本発明の方法を実施するに当つて、窒素原子含
有有機化合物の低温プラズマを形成するために使
用されるその窒素原子含有有機化合物としては、
とくに一般式
または
で示される化合物であることが望ましい。上記一
般式においてR1およびR4は置換もしくは非置換
の一価炭化水素基、R2、R3、R6、R7およびR8は
水素原子または置換もしくは非置換の一価炭化水
素基、R5は置換もしくは非置換の二価炭化水素
基をそれぞれ示す。
このような窒素原子含有有機化合物としては具
体的に、メチルアミン、ジメチルアミン、トリメ
チルアミン、エチルアミン、ジエチルアミン、ト
リエチルアミン、n−プロピルアミン、ジ−n−
プロピルアミン、トリ−n−プロピルアミン、n
−ブチルアミン、n−アミルアミン、n−ヘキシ
ルアミン、ラウリルアミン、エチレンジアミン、
トリメチレンジアミン、ヘキサメチレンジアミ
ン、エタノールアミン、ジエタノールアミン、ア
リルアミン、アニリン、アラニン、N−メチルア
ニリン、アリルジメチルアミン、2−アミノエチ
ルエーテル、1−ジメチルアミノ−2−クロロエ
タン、シクロプロピルアミン、シクロヘキシルア
ミン、エチレンイミン、1−メチルエチレンイミ
ン、N・N−ジメチルホルムアミド、ホルムアミ
ド、カプロンアミド、アミノアセタール、ベンジ
ルアミン、ピペリジン、ピロリジン、モルホリン
等のアミン、イミン、アミド、イミド等とその誘
導体が例示される。なお、これらは2種以上併用
してもよい。
他方有機けい素化合物の低温プラズマを形成す
るために使用されるその有機けい素化合物として
は、特に一般式
RaHbSiX4-a-b
で示されるオルガノシラン化合物およびこの加水
分解縮合物であることが望ましい。この一般式に
おいて、Rはメチル基、エチル基、プロピル基、
ブチル基等のアルキル基、ビニル基、アリル基等
のアルケニル基、エチニル基、プロピニル基、ブ
チニル基等のアルキニル基、フエニル基、ナフチ
ル基等のアリール基などの一価炭化水素基、およ
びこれら一価炭化水素基の水素原子が一部他の原
子(ハロゲンなど)または基(シアノ基など)で
置換された置換一価炭化水素基を示し、また式中
のXは塩素、臭素などのハロゲン、メトキシ基、
エトキシ基、ブトキシ基などのアルコキシ基を示
す。なお、式中のaは0、1、2、3、または
4、bは0、1、または2、ただしa+bは0、
1、2、3または4である。
このような有機けい素化合物の具体的例示とし
ては、トリメチルクロロシラン、トリメチルメト
キシシラン、トリメチルエトキシシラン、ビニル
ジメチルクロロシラン、ビニルジメチルメトキシ
シラン、ビニルジメチルエトキシシラン、エチニ
ルジメチルメトキシシラン、エチニルジメチルク
ロロシラン、メチルクロロメチルメトキシクロロ
シラン、トリエチルメトキシシラン、ジメチルク
ロロメチルエトキシシラン、ジメチルクロロメチ
ルクロロシラン、ジメチルフエニルメトキシシラ
ン、2−クロロエチニルジメチルクロロシラン、
2−クロロエチルジメチルメトキシシラン、メチ
ルジクロロシラン、ジメチルジメトキシシラン、
ジエチルジメトキシシラン、ジメチルジエトキシ
シラン、ビニルメチルジクロロシラン、ビニルメ
チルジメトキシシラン、2−クロロエチルメチル
ジメトキシシラン、ビニルメチルジエトキシシラ
ン、クロロメチルメチルジクロロシラン、ジメト
キシメチルフエニルシラン、クロロメチルメチル
ジメトキシシラン、メチルトリメトキシシラン、
メチルトリエトキシシラン、ビニルトリメトキシ
シラン、フエニルトリメトキシシラン、クロロメ
チルトリメトキシシラン、2−クロロエチルトリ
メトキシシラン、テトラメトキシシラン、テトラ
エトキシシランなどが例示される(以上あげたも
のは前記一般式においてXがアルコキシ基もしく
は塩素であるものに相当するが、臭素などの他の
ハロゲン元素である場合も同様である)ほか、前
記一般式に包含されることの明らかな式R4Si、
R3SiH、(R)(H)Si(X)2、HSiX3、(R)2
(H)Si(X)に相当するものもあげられる。な
お、これらは2種以上併用してもよい。
有機けい素化合物として以上例示したものはい
ずれもオルガノシラン化合物に相当するものであ
るが、本発明においてはこれらの加水分解縮合物
も使用することができ、これにはジビニルテトラ
メチルジシロキサン、ジクロロメチルテトラメチ
ルジシロキサン、ジエチニルテトラメチルジシロ
キサン、テトラメチルジシロキサンなどが例示さ
れる。もちろんこのほかの加水分解縮合物も使用
することができるが、ガス化困難な高縮合物は不
適当である。
本発明の方法で対象とされる塩化ビニル系樹脂
成形品は、ポリ塩化ビニルおよび塩化ビニルを主
体とする共重合体から製造されたいずれでもよ
く、この場合の塩化ビニルと共重合されるコモノ
マーとしては、ビニルエステル、ビニルエーテ
ル、アクリル酸またはメタクリル酸およびそのエ
ステル、マレイン酸またはフマル酸あるいはその
エステルならびに無水マレイン酸、芳香族ビニル
化合物、ハロゲン化ビニリデン、アクリロニトリ
ルまたはメタクリロニトリル、さらにはエチレ
ン、プロピレンなどのオレフインが例示される。
なお、塩化ビニル系樹脂には必要に応じ各種配
合剤、添加剤が加えられる。たとえば、成形品の
柔軟性、硬さを調節するために使用される可塑剤
としては、ジオクチルフタレート、ジブチルフタ
レート、ブチルベンジルフタレート等のフタル酸
エステル、アジピン酸ジオクチル、セバシン酸ジ
ブチル等の脂肪族二塩基酸エステル、ペンタエリ
スリトールエステル、ジエチレングリコールジベ
ンゾエート等のグリコールエステル、アセチルリ
シノール酸メチル等の脂肪酸エステル、トリクレ
ジールホスフエート、トリフエニルホスフエー
ト、等のりん酸エステル、エポキシ化大豆油、エ
ポキシ化アマニ油等のエポキシ化油、アセチルト
リブチルシトレート、アセチルトリオクチルシト
レート等のクエン酸エステル、トリアルキルトリ
メリテート、テトラ−n−オクチルピロメリテー
ト、ポリプロピレンアジペート、その他ポリエス
テル系等の種々の構造の可塑剤が例示される。
また、滑性、安定性等の性質向上のために使用
される添加剤として、ステアリン酸カルシウム、
ステアリン酸亜鉛、ステアリン酸鉛、ステアリン
酸バリウム、ステアリン酸カドミウム等のカルボ
ン酸の金属塩、三塩基性硫酸鉛、二塩基性亜りん
酸鉛、ジブチルすずジラウレート、ジ−n−オク
チルすずマレート、ジ−n−オクチルすずメルカ
プタイトのような有機すず化合物、ブチルステア
レートのようなエステル系、エチレンビスステア
ロアマイドのような脂肪酸アミド、高級脂肪酸お
よびそのエステル、あるいはポリエチレンワツク
ス等が例示される。その他塩化ビニル系樹脂の成
形に使用される各種添加剤たとえば充てん剤、耐
熱性向上剤、抗酸化剤、紫外線吸収剤、帯電防止
剤、無滴剤、顔料、染料、架橋助剤等が例示され
る。
さらには各種の高分子ゴム弾性体が配合されて
もよく、この高分子ゴム弾性体としてはエチレン
−酢酸ビニル共重合体、アクリロニトリル−ブタ
ジエン共重合体、スチレン−アクリロニトリル共
重合体、メチルメタクリレート−スチレン−ブタ
ジエン共重合体、アクリロニトリル−スチレン−
ブタジエン共重合体、ウレタンエラストマー、ポ
リアミド樹脂、エチレン−プロピレン−ジエンタ
−ポリマー、エポキシ変性ポリブタジエン樹脂等
が例示される。なお、これらは塩化ビニル系樹脂
100重量部あたり50重量部以下の配合量で使用す
ることが望ましい。
塩化ビニル系樹脂成形品を得る方法は、押出成
形、射出成形、カレンダー成形、インフレーシヨ
ン成形、圧縮成形等従来塩化ビニル樹脂の成形で
採用されている成形手段によればよく、成形品の
種類、形状については特に制限はない。
本発明はこのような塩化ビニル系樹脂成形品の
表面に対し、前記した両低温プラズマ処理を施す
ことにより、この成形品の表面特性を改質し、耐
久性、持続性にすぐれた帯電防止性を付与するも
のであるが、この処理の具体的方法は、基本的に
は、低温プラズマ発生装置内に塩化ビニル系樹脂
成形品を装入し、この装置内に前記した窒素原子
含有有機化合物もしくは有機けい素化合物のいず
れか一方のもののガスを流通しながら装置内を10
トル以下の圧力に調整保持し、このガス圧力下に
低温プラズマを発生させて該成形品をそのガスの
低温プラズマにさらし、ついで他方のもののガス
を流通しながら装置内を10トル以下の圧力に調整
保持し、このガス圧力下に低温プラズマを発生さ
せて該成形品をそのガスの低温プラズマにさらす
という二段階のプラズマ処理により行われる。
この二段階のプラズマ処理において窒素原子含
有有機化合物の低温プラズマ処理工程と有機けい
素化合物の低温プラズマ処理工程はそのいずれを
先に実施してもよいのであるが、本発明の効果を
より顕著に達成するためには、窒素原子含有有機
化合物の低温プラズマ処理を先に行い、ついで有
機けい素化合物の低温プラズマ処理を行うという
順序によるのが望ましい。
なお、窒素原子含有有機化合物の低温プラズマ
処理終了後、系内を一度排気し真空状態にした
後、有機けい素化合物を導入して次の低温プラズ
マ処理を行つてもよいし、また窒素原子含有有機
化合物の低温プラズマ処理中に時間経過と共に有
機けい素化合物のガスを少しづつ増量させて混合
し、同時に窒素原子含有有機化合物のガスを少し
づつ減量し、最後には有機けい素化合物単独の低
温プラズマ処理に移行させる方法によつてもよ
い。さらにまた前段の低温プラズマ処理終了後系
内に他種の不活性ガス、反応性ガスを導入して成
形品表面をそれらガスにさらしついで後段の低温
プラズマ処理を行う方法、あるいは処理効果を増
大させるため成形品に対して加熱処理、紫外光処
理、無機ガスの低温プラズマ処理を行うことも有
効である。
上記二段階のプラズマ処理を行うに当つて、窒
素原子含有有機化合物および有機けい素化合物の
ガスと共にヘリウム、アルゴン等の不活性ガス、
窒素、酸素、空気、水素、水蒸気、二酸化炭素、
一酸化炭素等の無機ガス、窒素原子含有有機化合
物および有機けい素化合物以外の有機ガスを共存
させてもよい。
なお、無機ガスを共存させる場合のガス分圧は
窒素原子含有有機化合物または有機けい素化合物
10-3〜10トル、無機ガス10-4〜10トルとすること
が望ましい。
これによれば耐久性、持続性にすぐれた良好な
帯電防止性(表面抵抗性の減少)が付与されるの
みならず、ぬれ性、印刷性、接着性等も付与され
るという利点が与えられる。
上記処理方法において、低温プラズマガスの装
置内における圧力が10トル以上であると、帯電防
止性にすぐれた処理成形品を得ることが困難とな
るので、この低温プラズマのガス圧力は10トル以
下であることが好ましく、特には1〜0.005トル
の範囲であることが望ましい。このガス圧力にお
ける低温プラズマ処理ですぐれた帯電防止性が付
与されるが、ガス圧力が10トル以上になると、帯
電防止性が急激に減少する(表面抵抗性の増大を
ともなう)。このような現象は、従来のプラズマ
重合、プラズマ処理で得られた知見からは全く予
想し得ないことである。
低温プラズマを発生させる条件としては、たと
えば電極に10KHz〜100MHz、10W〜100KWの電
力を印加すればよく、内部電極、外部電極(無電
極)のいずれの方式を使用してもよい。また、放
電の種類(グロー放電、コロナ放電等)にかかわ
らず十分な改質効果が得られる。プラズマ処理時
間は印加電力等によつても相違するが、一般には
数秒〜数十分で充分である。
つぎに具体的実施例をあげる。
実施例 1
塩化ビニル樹脂100重量部、バリウム−亜鉛系
安定剤3重量部、DOP50重量部、エポキシ化大
豆油2重量部からなる配合物を170℃で10分間ロ
ール混練し、これを175℃でプレス成形し、厚さ
0.5mmのシートを作成した(未処理シート)。
このシートをプラズマ発生装置内にセツトし、
装置内を10-4トルまで減圧にした後エチルアミン
ガスを導入しながら装置内を0.3トルに調整保持
し、13.56MHz1KWの高周波電力を与えて低温プ
ラズマを発生させシートを1分間処理した(処理
シート1)。
他方上記においてエチルアミンガスをトリメチ
ルクロロシランとしたほかは同様にしてシートを
3分間低温プラズマ処理した(処理シート2)。
また、処理シート1と全く同様にして低温プラ
ズマ処理し、ついで装置内を10-4トルまで減圧し
た後、トリメチルクロロシランガスを導入しなが
ら0.4トルに調整保持し、13.56MHz500Wの高周
波電力を与えて低温プラズマを発生させ、シート
を3分間処理した(処理シート3)。
このようにして処理したシート1、2および
3、および処理を行わなかつたシートについてタ
バコ灰吸着距離、表面固有抵抗および摩擦帯電圧
を測定したところ、第1表に示す結果が得られ
た。
The present invention relates to a method for surface treatment of vinyl chloride resin molded articles, and in particular, provides durable and permanent antistatic properties to the molded articles by subjecting the surface of the vinyl chloride resin molded article to low-temperature plasma treatment. The purpose is to In general, vinyl chloride resin molded products are extremely susceptible to being charged with electricity, resulting in dirt on the exterior due to the adhesion of dust, dirt, etc., and problems such as the effects of accumulated static electricity on the human body (electric shock) and spark discharge. It has points. Known methods for preventing this charging (accumulation of static electricity) include applying an antistatic agent to the surface of the molded product or incorporating an antistatic agent into the molded product during manufacture. The former method of application provides quick-acting effects, but lacks durability and has the problem of sticky and blocking surfaces, while the latter method is more durable than the former. Although the antistatic effect is excellent, the antistatic effect is insufficient, and when the amount of antistatic agent added to compensate for this, a sticky feeling appears on the surface of the molded product, causing problems such as blooming and blocking, as well as poor heat resistance. and processability deteriorates,
This has the disadvantage that the surface of the molded product becomes colored and easily becomes dirty. On the other hand, attempts have been made to treat the surface of vinyl chloride resin molded products with low-temperature plasma of inorganic gases such as helium, argon, nitrogen, oxygen, and carbon monoxide to make them hydrophilic, thereby suppressing charging. efforts have been made, but sufficient effects cannot be obtained. The present inventors have completed the present invention as a result of extensive research in order to solve these problems.
This relates to a surface treatment method for a vinyl chloride resin molded article, which comprises subjecting the surface of the vinyl chloride resin molded article to low-temperature plasma treatment with a nitrogen atom-containing organic compound and low-temperature plasma treatment with an organosilicon compound. It is something. According to the method of the present invention, the surface properties of the molded article are modified without impairing its inherent mechanical strength, and the low-temperature plasma treatment of the nitrogen atom-containing organic compound and the low-temperature plasma treatment of the organosilicon compound are performed. It was confirmed that the synergistic effect of the treatments provided antistatic properties that were even more permanent and durable. By performing both of these treatments, an extremely thin modified layer is formed on the surface of the molded product, and this layer has the characteristic of strongly bonding to vinyl chloride resin.
Furthermore, the formation speed of this modified layer is faster than when the molded article is made of other polymers, and it is thought that this is because the effects of the low-temperature plasma treatment on both of them are noticeable. The method of the present invention will be explained in detail below. In carrying out the method of the present invention, the nitrogen atom-containing organic compound used to form the low-temperature plasma of the nitrogen atom-containing organic compound is:
Especially general formulas or A compound represented by is desirable. In the above general formula, R 1 and R 4 are substituted or unsubstituted monovalent hydrocarbon groups, R 2 , R 3 , R 6 , R 7 and R 8 are hydrogen atoms or substituted or unsubstituted monovalent hydrocarbon groups, R 5 represents a substituted or unsubstituted divalent hydrocarbon group, respectively. Specifically, such nitrogen atom-containing organic compounds include methylamine, dimethylamine, trimethylamine, ethylamine, diethylamine, triethylamine, n-propylamine, di-n-
propylamine, tri-n-propylamine, n
-butylamine, n-amylamine, n-hexylamine, laurylamine, ethylenediamine,
trimethylenediamine, hexamethylenediamine, ethanolamine, diethanolamine, allylamine, aniline, alanine, N-methylaniline, allyldimethylamine, 2-aminoethyl ether, 1-dimethylamino-2-chloroethane, cyclopropylamine, cyclohexylamine, Examples include amines such as ethyleneimine, 1-methylethyleneimine, N·N-dimethylformamide, formamide, capronamide, aminoacetal, benzylamine, piperidine, pyrrolidine, and morpholine, imines, amides, imides, and derivatives thereof. Note that two or more of these may be used in combination. On the other hand, the organosilicon compounds used to form the low-temperature plasma of organosilicon compounds are especially organosilane compounds represented by the general formula R a H b SiX 4-ab and their hydrolyzed condensates. is desirable. In this general formula, R is a methyl group, an ethyl group, a propyl group,
Monovalent hydrocarbon groups such as alkyl groups such as butyl groups, alkenyl groups such as vinyl groups and allyl groups, alkynyl groups such as ethynyl groups, propynyl groups and butynyl groups, aryl groups such as phenyl groups and naphthyl groups, and monovalent hydrocarbon groups such as these groups. Indicates a substituted monovalent hydrocarbon group in which the hydrogen atoms of the valent hydrocarbon group are partially substituted with other atoms (such as halogen) or groups (such as cyano group), and X in the formula represents a halogen such as chlorine or bromine, methoxy group,
Indicates an alkoxy group such as an ethoxy group or a butoxy group. In addition, a in the formula is 0, 1, 2, 3, or 4, b is 0, 1, or 2, but a+b is 0,
1, 2, 3 or 4. Specific examples of such organosilicon compounds include trimethylchlorosilane, trimethylmethoxysilane, trimethylethoxysilane, vinyldimethylchlorosilane, vinyldimethylmethoxysilane, vinyldimethylethoxysilane, ethynyldimethylmethoxysilane, ethynyldimethylchlorosilane, and methylchlorosilane. Methylmethoxychlorosilane, triethylmethoxysilane, dimethylchloromethylethoxysilane, dimethylchloromethylchlorosilane, dimethylphenylmethoxysilane, 2-chloroethynyldimethylchlorosilane,
2-chloroethyldimethylmethoxysilane, methyldichlorosilane, dimethyldimethoxysilane,
Diethyldimethoxysilane, dimethyldiethoxysilane, vinylmethyldichlorosilane, vinylmethyldimethoxysilane, 2-chloroethylmethyldimethoxysilane, vinylmethyldiethoxysilane, chloromethylmethyldichlorosilane, dimethoxymethylphenylsilane, chloromethylmethyldimethoxysilane , methyltrimethoxysilane,
Examples include methyltriethoxysilane, vinyltrimethoxysilane, phenyltrimethoxysilane, chloromethyltrimethoxysilane, 2-chloroethyltrimethoxysilane, tetramethoxysilane, and tetraethoxysilane. In the formula, X corresponds to an alkoxy group or chlorine, but the same applies when it is another halogen element such as bromine), as well as the formula R 4 Si, which is clearly included in the above general formula,
R3SiH , (R)(H)Si(X) 2 , HSiX3 , (R) 2
(H) Those corresponding to Si(X) can also be mentioned. Note that two or more of these may be used in combination. All of the organosilicon compounds exemplified above correspond to organosilane compounds, but in the present invention, hydrolyzed condensates of these compounds can also be used, including divinyltetramethyldisiloxane, dichlorosiloxane, Examples include methyltetramethyldisiloxane, diethynyltetramethyldisiloxane, and tetramethyldisiloxane. Of course, other hydrolysis condensates can also be used, but high condensates that are difficult to gasify are unsuitable. The vinyl chloride resin molded article targeted by the method of the present invention may be manufactured from polyvinyl chloride or a copolymer mainly composed of vinyl chloride, and in this case, the comonomer to be copolymerized with vinyl chloride is are vinyl esters, vinyl ethers, acrylic acid or methacrylic acid and its esters, maleic acid or fumaric acid or its esters, maleic anhydride, aromatic vinyl compounds, vinylidene halides, acrylonitrile or methacrylonitrile, as well as ethylene, propylene, etc. An example is olefin. Note that various compounding agents and additives may be added to the vinyl chloride resin as necessary. For example, plasticizers used to adjust the flexibility and hardness of molded products include phthalic acid esters such as dioctyl phthalate, dibutyl phthalate, and butylbenzyl phthalate, and aliphatic esters such as dioctyl adipate and dibutyl sebacate. Basic acid esters, pentaerythritol esters, glycol esters such as diethylene glycol dibenzoate, fatty acid esters such as methyl acetyl ricinoleate, phosphate esters such as tricresyl phosphate, triphenyl phosphate, epoxidized soybean oil, epoxidized linseed Epoxidized oils such as oils, citric acid esters such as acetyl tributyl citrate and acetyl trioctyl citrate, trialkyl trimellitate, tetra-n-octyl pyromellitate, polypropylene adipate, and other polyesters with various structures. An example is a plasticizer. In addition, calcium stearate,
Metal salts of carboxylic acids such as zinc stearate, lead stearate, barium stearate, cadmium stearate, tribasic lead sulfate, dibasic lead phosphite, dibutyltin dilaurate, di-n-octyltin malate, Examples include organic tin compounds such as -n-octyltin mercaptite, esters such as butyl stearate, fatty acid amides such as ethylene bisstearamide, higher fatty acids and their esters, and polyethylene wax. Various other additives used in the molding of vinyl chloride resins include fillers, heat resistance improvers, antioxidants, ultraviolet absorbers, antistatic agents, anti-drop agents, pigments, dyes, crosslinking aids, etc. Ru. Furthermore, various polymeric rubber elastic bodies may be blended, such as ethylene-vinyl acetate copolymer, acrylonitrile-butadiene copolymer, styrene-acrylonitrile copolymer, methyl methacrylate-styrene. -Butadiene copolymer, acrylonitrile-styrene-
Examples include butadiene copolymers, urethane elastomers, polyamide resins, ethylene-propylene-diene terpolymers, and epoxy-modified polybutadiene resins. Please note that these are vinyl chloride resins.
It is desirable to use the compound in an amount of 50 parts by weight or less per 100 parts by weight. The method for obtaining a vinyl chloride resin molded product may be any conventional molding method used for molding vinyl chloride resin, such as extrusion molding, injection molding, calendar molding, inflation molding, or compression molding, depending on the type of molded product. , there are no particular restrictions on the shape. The present invention modifies the surface characteristics of such molded products by subjecting the surface of such vinyl chloride resin molded products to both of the above-mentioned low-temperature plasma treatments, resulting in highly durable and long-lasting antistatic properties. The specific method of this treatment is basically to charge a vinyl chloride resin molded product into a low-temperature plasma generator, and to add the above-mentioned nitrogen atom-containing organic compound or 10 minutes inside the device while flowing gas of one of the organosilicon compounds.
Adjust and maintain the pressure to below 10 Torr, generate low temperature plasma under this gas pressure, expose the molded product to the low temperature plasma of the gas, and then reduce the pressure within the device to below 10 Torr while passing the gas from the other gas. The plasma treatment is performed in two steps: adjusting and holding the gas, generating low-temperature plasma under the gas pressure, and exposing the molded article to the low-temperature plasma of the gas. In this two-step plasma treatment, either the low-temperature plasma treatment step for the nitrogen atom-containing organic compound or the low-temperature plasma treatment step for the organosilicon compound may be performed first, but the effect of the present invention can be more pronounced. In order to achieve this, it is desirable to first perform low-temperature plasma treatment on the nitrogen atom-containing organic compound, and then perform low-temperature plasma treatment on the organosilicon compound. After the low-temperature plasma treatment of the nitrogen atom-containing organic compound, the system may be evacuated once to create a vacuum state, and then the organosilicon compound may be introduced and the next low-temperature plasma treatment may be performed. During low-temperature plasma treatment of organic compounds, the amount of organic silicon compound gas is gradually increased and mixed over time, and at the same time the amount of nitrogen-containing organic compound gas is gradually decreased, and finally the organic silicon compound alone is treated at low temperature. A method of transferring to plasma treatment may also be used. Furthermore, there is a method of introducing other types of inert gas or reactive gas into the system after the completion of the first-stage low-temperature plasma treatment and exposing the molded product surface to these gases to perform the second-stage low-temperature plasma treatment, or to increase the treatment effect. Therefore, it is also effective to subject the molded product to heat treatment, ultraviolet light treatment, and low-temperature plasma treatment with inorganic gas. In carrying out the above two-step plasma treatment, an inert gas such as helium or argon is used together with the nitrogen atom-containing organic compound and organosilicon compound gas.
Nitrogen, oxygen, air, hydrogen, water vapor, carbon dioxide,
An inorganic gas such as carbon monoxide, a nitrogen atom-containing organic compound, and an organic gas other than an organosilicon compound may be coexisting. In addition, when an inorganic gas is coexisting, the gas partial pressure is that of a nitrogen atom-containing organic compound or an organosilicon compound.
10 -3 to 10 torr, preferably 10 -4 to 10 torr for inorganic gas. This not only provides excellent antistatic properties (reduced surface resistance) with excellent durability and sustainability, but also has the advantage of providing wettability, printability, adhesion, etc. . In the above processing method, if the pressure of the low-temperature plasma gas in the device is 10 Torr or more, it will be difficult to obtain a processed molded product with excellent antistatic properties, so the gas pressure of this low-temperature plasma should be 10 Torr or less. It is preferably in the range of 1 to 0.005 Torr. Low-temperature plasma treatment at this gas pressure imparts excellent antistatic properties, but when the gas pressure exceeds 10 Torr, the antistatic properties rapidly decrease (accompanied by an increase in surface resistance). Such a phenomenon is completely unexpected from the knowledge obtained in conventional plasma polymerization and plasma treatment. As conditions for generating low-temperature plasma, for example, a power of 10 KHz to 100 MHz and 10 W to 100 KW may be applied to the electrodes, and either an internal electrode method or an external electrode (electrodeless) method may be used. Further, a sufficient reforming effect can be obtained regardless of the type of discharge (glow discharge, corona discharge, etc.). The plasma processing time varies depending on the applied power and the like, but generally several seconds to several tens of minutes is sufficient. Next, a specific example will be given. Example 1 A blend consisting of 100 parts by weight of vinyl chloride resin, 3 parts by weight of barium-zinc stabilizer, 50 parts by weight of DOP, and 2 parts by weight of epoxidized soybean oil was roll-kneaded at 170°C for 10 minutes, and then kneaded at 175°C. Press molded and thickness
A 0.5 mm sheet was created (untreated sheet). Set this sheet in the plasma generator,
After reducing the pressure inside the apparatus to 10 -4 Torr, the pressure inside the apparatus was adjusted and maintained at 0.3 Torr while introducing ethylamine gas, and high-frequency power of 13.56MHz 1KW was applied to generate low-temperature plasma and the sheet was processed for 1 minute (processed sheet 1). On the other hand, the sheet was subjected to low-temperature plasma treatment for 3 minutes in the same manner as above except that trimethylchlorosilane was used instead of ethylamine gas (treated sheet 2). In addition, low-temperature plasma treatment was performed in exactly the same manner as for treatment sheet 1, and then the pressure inside the apparatus was reduced to 10 -4 Torr, and then adjusted and maintained at 0.4 Torr while introducing trimethylchlorosilane gas, and high frequency power of 13.56MHz 500W was applied. A low-temperature plasma was generated and the sheet was treated for 3 minutes (treated sheet 3). When the tobacco ash adsorption distance, surface resistivity, and frictional charging voltage were measured for the thus treated sheets 1, 2, and 3 and the untreated sheet, the results shown in Table 1 were obtained.
【表】
実施例 2
塩化ビニル樹脂100重量部、ジブチルすずメル
カプタイド系安定剤3重量部、滑剤ポリエチレン
ワツクス0.1重量部からなる配合物を180℃で10分
間ロール混練し、これを185℃でプレス成形し、
厚さ1mmのシートを作成した(未処理シート)。
このシートをプラズマ発生装置内にセツトし、
装置内を10-4トルまで減圧にした後ジメチルアミ
ンガスを導入しながら装置内を0.08トルに調整保
持し、13.56MHz700Wの高周波電力を与えて低温
プラズマを発生させシートを2分間処理した。つ
いで装置内を10-4トルまで減圧した後、ビニルメ
チルジメトキシシランガスを導入しながら0.1ト
ルに調整保持し、13.56MHz1KWの高周波電力を
与えて低温プラズマを発生させ、シートを1分間
処理した。
このようにして処理したシートと全く低温プラ
ズマ処理を行わないシートについて前例と同様に
して諸物性を測定したところ、第2表に示すとお
りの結果が得られた。[Table] Example 2 A blend consisting of 100 parts by weight of vinyl chloride resin, 3 parts by weight of dibutyltin mercaptide stabilizer, and 0.1 part by weight of polyethylene wax lubricant was roll-kneaded at 180°C for 10 minutes, and then pressed at 185°C. mold,
A sheet with a thickness of 1 mm was prepared (untreated sheet). Set this sheet inside the plasma generator,
After reducing the pressure inside the apparatus to 10 -4 torr, the inside of the apparatus was adjusted and maintained at 0.08 torr while introducing dimethylamine gas, and high-frequency power of 13.56 MHz and 700 W was applied to generate low-temperature plasma and the sheet was treated for 2 minutes. Next, the pressure inside the apparatus was reduced to 10 -4 torr, and then adjusted and maintained at 0.1 torr while introducing vinylmethyldimethoxysilane gas, and high-frequency power of 13.56 MHz and 1 KW was applied to generate low-temperature plasma, and the sheet was treated for 1 minute. When various physical properties were measured in the same manner as in the previous example for sheets treated in this manner and sheets that were not subjected to any low-temperature plasma treatment, the results shown in Table 2 were obtained.
【表】
実施例 3
塩化ビニル樹脂100重量部、ジブチルすずマレ
エート1.5重量部、カルシウムステアレート1重
量部、亜鉛ステアレート0.5重量部、ステアリン
酸1重量部からなる配合物を180℃で10分間ロー
ル混練し、これを185℃でプレス成形し、厚さ1
mmのシートを作成した(未処理シート)。
このシートをプラズマ発生装置内にセツトし、
装置内を10-4トルまで減圧にした後アルゴンガス
を導入しながら装置内を0.05トルに調整保持し、
ついでこれにメチルアミンガスを導入してメチル
アミンガス分圧0.1トル、アルゴンガス分圧0.05
トルに調整した。この状態で13.56MHz200Wの高
周波電力を与えて低温プラズマを発生させ、シー
トを5分間処理した(処理シート1)。
他方上記においてメチルアミンガスをトリメチ
ルメトキシシランとしたほかは同様にしてシート
を3分間低温プラズマ処理した(処理シート
2)。
また、処理シート1と全く同様にして低温プラ
ズマ処理し、ついで装置内を10-4トルまで減圧し
た後大気を導入しながら装置内を0.05トルに調整
保持した。つぎにこれにトリメチルメトキシシラ
ンガスを導入してメリメチルメトキシシランガス
分圧0.3トル、大気分圧0.05トルに調整した。こ
の状態で13.56MHz400Wの高周波電力を与えて低
温プラズマを発生させ、シートを3分間処理した
(処理シート3)。
このようにして処理したシート1、2および
3、および処理を行わなかつたシートについて、
タバコ灰吸着距離、表面固有抵抗および摩擦帯電
圧を測定したところ、第3表に示す結果が得られ
た。[Table] Example 3 A blend consisting of 100 parts by weight of vinyl chloride resin, 1.5 parts by weight of dibutyltin maleate, 1 part by weight of calcium stearate, 0.5 parts by weight of zinc stearate, and 1 part by weight of stearic acid was rolled at 180°C for 10 minutes. Knead and press-form at 185℃ to a thickness of 1.
mm sheet was created (unprocessed sheet). Set this sheet inside the plasma generator,
After reducing the pressure inside the device to 10 -4 torr, adjust and maintain the inside of the device at 0.05 torr while introducing argon gas.
Next, methylamine gas was introduced into this, and the partial pressure of methylamine gas was 0.1 torr, and the partial pressure of argon gas was 0.05.
I adjusted it to the torque. In this state, high-frequency power of 13.56 MHz and 200 W was applied to generate low-temperature plasma, and the sheet was treated for 5 minutes (treated sheet 1). On the other hand, the sheet was subjected to low-temperature plasma treatment for 3 minutes in the same manner as above except that trimethylmethoxysilane was used instead of methylamine gas (treated sheet 2). Further, the sheet was subjected to low-temperature plasma treatment in exactly the same manner as Treated Sheet 1, and then the pressure inside the apparatus was reduced to 10 -4 Torr, and then the pressure inside the apparatus was adjusted and maintained at 0.05 Torr while introducing atmospheric air. Next, trimethylmethoxysilane gas was introduced into this, and the partial pressure of the mrimethylmethoxysilane gas was adjusted to 0.3 torr and the atmospheric partial pressure to 0.05 torr. In this state, high frequency power of 13.56 MHz and 400 W was applied to generate low temperature plasma, and the sheet was treated for 3 minutes (treated sheet 3). Regarding sheets 1, 2, and 3 treated in this way, and sheets that were not treated,
When the tobacco ash adsorption distance, surface resistivity and frictional charging voltage were measured, the results shown in Table 3 were obtained.
【表】
実施例 4
実施例2と同様に成形して得た塩化ビニル樹脂
シートをプラズマ発生装置内にセツトし装置内を
10-4トルまで減圧した後アリルアミンガスを導入
しながら装置内を0.05トルに調整保持後、
110KHz3KWの高周波電力を与えて低温プラズマ
を発生させシートを30秒間処理した。
この処理シートを大気中に取出し24時間50℃で
維持した後再びプラズマ発生装置内にセツトし装
置内を10-4トルまで減圧した後窒素ガスを導入し
ながら装置内を0.1トルに調整保持し、これにテ
トラメトキシシランガスを導入して、テトラメト
キシシランガス分圧0.1トル、窒素ガス分圧0.1ト
ルに調整保持後110KHz2KWの高周波電力を与え
て低温プラズマを発生させシートを30秒間処理し
た。
このようにして2段階の低温プラズマ処理した
シートについて実施例1と同様にして諸物性を測
定したところ、結果は第4表に示すとおりであつ
た。[Table] Example 4 A vinyl chloride resin sheet obtained by molding in the same manner as in Example 2 was set in a plasma generator, and the inside of the device was opened.
After reducing the pressure to 10 -4 torr, the inside of the device was adjusted to 0.05 torr while introducing allylamine gas, and then maintained at 0.05 torr.
High-frequency power of 110KHz3KW was applied to generate low-temperature plasma and the sheet was treated for 30 seconds. This treated sheet was taken out into the atmosphere and kept at 50°C for 24 hours, then placed back into the plasma generator and the pressure inside the equipment was reduced to 10 -4 torr, and then nitrogen gas was introduced while adjusting and maintaining the inside of the equipment at 0.1 torr. Tetramethoxysilane gas was introduced into this, the partial pressure of tetramethoxysilane gas was adjusted to 0.1 torr, and the partial pressure of nitrogen gas was adjusted and maintained at 0.1 torr, and then high-frequency power of 110 KHz2KW was applied to generate low-temperature plasma and the sheet was treated for 30 seconds. When the various physical properties of the sheet subjected to the two-stage low temperature plasma treatment were measured in the same manner as in Example 1, the results were as shown in Table 4.
【表】
実施例 5
塩化ビニル−酢酸ビニル共重合体(酢酸ビニル
含有量16重量%)100重量部、エポキシ化大豆油
1重量部、ジブチルすずメルカプタイド1重量
部、カルシウムステアレート0.5重量部、カーボ
ンブラツク0.1重量部からなる配合物を180℃10分
間混練し、185℃でプレス成形して厚さ5mmの板
状体を得た。
この板状体をプラズマ発生装置内にセツトし装
置内を10-4トルまで減圧した後、これにエチレン
ジアミンガスを導入しながら装置内を0.05トルに
調整保持し、110KHz3KWの高周波電力を与えて
低温プラズマを発生させ板状体を5分間処理し
た。つぎにこの処理に続いてエチレンジアミンガ
スの導入量を減らしながら一方同時ビニルジメチ
ルクロロシランガスを導入して徐々に増加させ、
この間装置内は0.05トルに保持し、3分後装置内
をビニルジメチルクロロシランガス0.05トルの低
温プラズマに切換え、当該低温プラズマで板状体
をさらに5分間処理した。
このようにして処理した板状体と全く処理を施
こさなかつた板状体について実施例1と同様に諸
物性を測定したところ、結果は第5表に示すとお
りであつた。[Table] Example 5 100 parts by weight of vinyl chloride-vinyl acetate copolymer (vinyl acetate content: 16% by weight), 1 part by weight of epoxidized soybean oil, 1 part by weight of dibutyltin mercaptide, 0.5 parts by weight of calcium stearate, carbon A blend consisting of 0.1 part by weight of black was kneaded at 180°C for 10 minutes and press-molded at 185°C to obtain a plate-like body with a thickness of 5 mm. After setting this plate-shaped body in a plasma generator and reducing the pressure inside the device to 10 -4 Torr, the inside of the device was adjusted and maintained at 0.05 Torr while introducing ethylenediamine gas, and high frequency power of 110 KHz 3 KW was applied to lower the temperature. Plasma was generated and the plate was treated for 5 minutes. Next, following this treatment, while reducing the amount of ethylenediamine gas introduced, vinyldimethylchlorosilane gas was simultaneously introduced and gradually increased.
During this time, the inside of the apparatus was maintained at 0.05 torr, and after 3 minutes, the inside of the apparatus was switched to low-temperature plasma of vinyl dimethylchlorosilane gas at 0.05 torr, and the plate-shaped body was treated with the low-temperature plasma for an additional 5 minutes. Various physical properties were measured in the same manner as in Example 1 for the plate-like bodies treated in this way and the plate-like bodies that were not subjected to any treatment, and the results were as shown in Table 5.
Claims (1)
原子含有有機化合物の低温プラズマ処理および有
機けい素化合物の低温プラズマ処理、を施すこと
を特徴とする塩化ビニル系樹脂成形品の表面処理
方法。 2 前記窒素原子含有有機化合物が、一般式 (式中、R1は置換もしくは非置換の一価炭化水素
基、R2およびR3は水素原子または置換もしくは
非置換の一価炭化水素基)で示される化合物であ
る特許請求の範囲第1項記載の表面処理方法。 3 前記窒素原子含有有機化合物が、一般式 (式中、R4は置換もしくは非置換の一価炭化水素
基、R5は置換もしくは非置換の二価炭化水素
基、R6、R7およびR8は水素原子または置換もし
くは非置換の一価炭化水素基)で示される化合物
である特許請求の範囲第1項記載の表面処理方
法。 4 前記有機けい素化合物が、一般式 RaHbSiX4-a-b (式中のRは置換もしくは非置換の一価炭化水素
基、Xはハロゲン原子もしくはアルコキシ基を示
し、aは0、1、2、3または4、bは0、1ま
たは2、ただしa+bは0、1、2、3または4
である)で示されるオルガノシランもしくはこの
加水分解縮合物である特許請求の範囲第1項記載
の表面処理方法。 5 前記窒素原子含有有機化合物の低温プラズマ
処理が、ガス分圧10-3〜10トルの窒素原子含有有
機化合物とガス分圧10-4〜10トルの無機ガスとの
存在下で行われることを特徴とする特許請求の範
囲第1項記載の表面処理方法。 6 前記有機けい素化合物の低温プラズマ処理
が、ガス分圧10-3〜10トルの有機けい素化合物と
ガス分圧10-4〜10トルの無機ガスとの存在下で行
われることを特徴とする特許請求の範囲第1項記
載の表面処理方法。[Scope of Claims] 1. A vinyl chloride resin molded article, characterized in that the surface of the vinyl chloride resin molded article is subjected to low-temperature plasma treatment with a nitrogen atom-containing organic compound and low-temperature plasma treatment with an organosilicon compound. surface treatment method. 2 The nitrogen atom-containing organic compound has the general formula (wherein R 1 is a substituted or unsubstituted monovalent hydrocarbon group, R 2 and R 3 are hydrogen atoms or substituted or unsubstituted monovalent hydrocarbon groups) Surface treatment method described in section. 3 The nitrogen atom-containing organic compound has the general formula (In the formula, R 4 is a substituted or unsubstituted monovalent hydrocarbon group, R 5 is a substituted or unsubstituted divalent hydrocarbon group, and R 6 , R 7 and R 8 are hydrogen atoms or substituted or unsubstituted monovalent hydrocarbon groups. 2. The surface treatment method according to claim 1, wherein the surface treatment method is a compound represented by a valent hydrocarbon group. 4 The organosilicon compound has the general formula R a H b SiX 4-ab (wherein R is a substituted or unsubstituted monovalent hydrocarbon group, X is a halogen atom or an alkoxy group, and a is 0, 1 , 2, 3 or 4, b is 0, 1 or 2, but a+b is 0, 1, 2, 3 or 4
2. The surface treatment method according to claim 1, which is an organosilane represented by the following formula or a hydrolyzed condensate thereof. 5. The low-temperature plasma treatment of the nitrogen atom-containing organic compound is carried out in the presence of the nitrogen atom-containing organic compound with a gas partial pressure of 10 -3 to 10 Torr and an inorganic gas with a gas partial pressure of 10 -4 to 10 Torr. A surface treatment method according to claim 1, characterized in that: 6. The low temperature plasma treatment of the organosilicon compound is carried out in the presence of the organosilicon compound with a gas partial pressure of 10 -3 to 10 Torr and an inorganic gas with a gas partial pressure of 10 -4 to 10 Torr. A surface treatment method according to claim 1.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56096315A JPS57212234A (en) | 1981-06-22 | 1981-06-22 | Surface treatment of vinyl chloride resin molded article |
| FR8210669A FR2508050B1 (en) | 1981-06-22 | 1982-06-18 | PROCESS FOR IMPROVING THE SURFACE PROPERTIES OF ARTICLES MADE OF PVC RESIN USING LOW TEMPERATURE PLASMA |
| GB08217955A GB2101608B (en) | 1981-06-22 | 1982-06-21 | Method for treating a shaped article of a vinyl chloride-based resin |
| DE19823223253 DE3223253A1 (en) | 1981-06-22 | 1982-06-22 | METHOD FOR IMPROVING THE SURFACE PROPERTIES OF AN OBJECT MOLDED FROM A RESIN BASED ON VINYL CHLORIDE |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56096315A JPS57212234A (en) | 1981-06-22 | 1981-06-22 | Surface treatment of vinyl chloride resin molded article |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57212234A JPS57212234A (en) | 1982-12-27 |
| JPS6157332B2 true JPS6157332B2 (en) | 1986-12-06 |
Family
ID=14161588
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56096315A Granted JPS57212234A (en) | 1981-06-22 | 1981-06-22 | Surface treatment of vinyl chloride resin molded article |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS57212234A (en) |
| DE (1) | DE3223253A1 (en) |
| FR (1) | FR2508050B1 (en) |
| GB (1) | GB2101608B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5829119A (en) * | 1981-08-14 | 1983-02-21 | Shin Etsu Chem Co Ltd | Antistatic magnetic tape |
| WO1989011500A1 (en) * | 1988-05-17 | 1989-11-30 | Commonwealth Scientific And Industrial Research Or | Hydrophilic non-swelling multilayer polymeric materials and process for their manufacture |
| US5449383A (en) * | 1992-03-18 | 1995-09-12 | Chatelier; Ronald C. | Cell growth substrates |
| DE102016206009B4 (en) * | 2016-04-11 | 2021-12-16 | Innovent E.V. | Process for coating a substrate |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1077787A (en) * | 1975-11-21 | 1980-05-20 | National Aeronautics And Space Administration | Abrasion resistant coatings for plastic surfaces |
| US4091166A (en) * | 1977-06-17 | 1978-05-23 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Boron trifluoride coatings for thermoplastic materials and method of applying same in glow discharge |
| GB2025430B (en) * | 1978-06-26 | 1982-09-22 | Agency Ind Science Techn | Method for reducing electrostatic charging on shaped articles of polyvinyl chloride resins |
| JPS5516004A (en) * | 1978-06-26 | 1980-02-04 | Agency Of Ind Science & Technol | Production of vinyl chloride resin molding |
| JPS587654B2 (en) * | 1978-11-30 | 1983-02-10 | 信越化学工業株式会社 | Surface treatment method for vinyl chloride resin molded products |
| JPS5814453B2 (en) * | 1979-07-16 | 1983-03-19 | 信越化学工業株式会社 | Surface treatment method for plastic molded products |
| JPS6059928B2 (en) * | 1980-09-08 | 1985-12-27 | 信越化学工業株式会社 | Surface treatment method for vinyl chloride resin molded products |
| US4395434A (en) * | 1980-09-16 | 1983-07-26 | Shin-Etsu Chemical Co., Ltd. | Method for improving surface properties of shaped articles of synthetic resins |
-
1981
- 1981-06-22 JP JP56096315A patent/JPS57212234A/en active Granted
-
1982
- 1982-06-18 FR FR8210669A patent/FR2508050B1/en not_active Expired
- 1982-06-21 GB GB08217955A patent/GB2101608B/en not_active Expired
- 1982-06-22 DE DE19823223253 patent/DE3223253A1/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2508050A1 (en) | 1982-12-24 |
| DE3223253A1 (en) | 1982-12-30 |
| DE3223253C2 (en) | 1992-12-03 |
| JPS57212234A (en) | 1982-12-27 |
| GB2101608B (en) | 1985-01-30 |
| FR2508050B1 (en) | 1986-04-04 |
| GB2101608A (en) | 1983-01-19 |
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