JPS6160401B2 - - Google Patents

Info

Publication number
JPS6160401B2
JPS6160401B2 JP57001640A JP164082A JPS6160401B2 JP S6160401 B2 JPS6160401 B2 JP S6160401B2 JP 57001640 A JP57001640 A JP 57001640A JP 164082 A JP164082 A JP 164082A JP S6160401 B2 JPS6160401 B2 JP S6160401B2
Authority
JP
Japan
Prior art keywords
substrate
optical waveguide
diffusion
manufacturing
tapered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57001640A
Other languages
Japanese (ja)
Other versions
JPS58118610A (en
Inventor
Kazuhisa Kaede
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP57001640A priority Critical patent/JPS58118610A/en
Publication of JPS58118610A publication Critical patent/JPS58118610A/en
Publication of JPS6160401B2 publication Critical patent/JPS6160401B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13Integrated optical circuits characterised by the manufacturing method
    • G02B6/134Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms
    • G02B6/1345Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms using ion exchange

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)

Description

【発明の詳細な説明】 本発明は基板に形成されたテーパ状光導波路の
製造方法に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a tapered optical waveguide formed on a substrate.

基板に形成された光導波路は、光回路の小型
化、集積化、また信頼性の向上を計る上で重要な
役割を果している。この光導波路を用いた光回路
の低損失化を計るためには、光導波路の損失の低
減及び光回路の入出力部での結合損失の低減を計
る必要がある。このうち、後者の問題を解決する
有力な手段として、基板に形成された光導波路の
入出力端部をテーパ状光導波路とすることが知ら
れている。
Optical waveguides formed on substrates play an important role in reducing the size and integration of optical circuits and improving their reliability. In order to reduce the loss of an optical circuit using this optical waveguide, it is necessary to reduce the loss of the optical waveguide and the coupling loss at the input/output section of the optical circuit. Among these, as an effective means to solve the latter problem, it is known that the input and output ends of the optical waveguide formed on the substrate are made into tapered optical waveguides.

従来、このテーパ状光導波路の製造方法とし
て、雑誌、アプライド・オプテイクス(Applied
Optics)の1979年3月号に掲載されたジエー・
シー・キヤンベル(J.C.Campbell)氏の論文に
示されたような製造方法が知られている。これは
第1図aに示したように、イオン拡散を阻止する
働きを有するSiNからなる拡散阻止層101の一
部をエツチングすることにより形成された拡散用
ストライプパターン102を設けた基板103
を、第1図bに示したように、一点鎖線A―
A′に近い端部の方から時間とともに徐々に
AgNO3の溶融塩104の中に浸してゆくことに
より拡散深さを変化させてテーパ状光導波路を形
成するというものである。その結果得られた光導
波路の断面形状を第1図aで示した2つの一点鎖
線A―A′,B―B′に沿つた断面でそれぞれ示す
と、第1図c,dのように各箇所で光導波路10
5,105′の断面の大きさが異なるテーパ状と
なつている。しかし、この従来法では自然拡散に
より光導波路を形成しているため、製造に長い時
間を要すること、基板を徐々に溶融塩に浸してい
くという作業を必要とすること、などの欠点があ
つた。
Conventionally, the manufacturing method for this tapered optical waveguide has been described in the magazine Applied Optics (Applied Optics).
Optics) published in the March 1979 issue of G.E.
A manufacturing method as described in a paper by JCCampbell is known. As shown in FIG. 1a, this is a substrate 103 provided with a diffusion stripe pattern 102 formed by etching a part of a diffusion prevention layer 101 made of SiN that has the function of inhibiting ion diffusion.
As shown in Figure 1b, the dashed line A--
Gradually over time, starting from the end closest to A′
By immersing it in AgNO 3 molten salt 104, the diffusion depth is changed to form a tapered optical waveguide. When the cross-sectional shape of the resulting optical waveguide is shown along the two dashed lines A-A' and B-B' shown in Fig. 1a, each section is shown as shown in Fig. 1c and d. Optical waveguide 10 at the location
5 and 105' have a tapered shape with different cross-sectional sizes. However, because this conventional method forms optical waveguides through natural diffusion, it has drawbacks such as a long manufacturing time and the need to gradually immerse the substrate in molten salt. .

本発明の目的は、上述の欠点を除去し、従来よ
りも短かい時間で製造することができ、かつ、一
度に全長にわたつて拡散を行なうことができるた
め、製造プロセスが簡略化されたテーパ状光導波
路の製造方法を提供することにある。
The object of the present invention is to eliminate the above-mentioned drawbacks, to provide a taper which can be manufactured in a shorter time than before, and which simplifies the manufacturing process since diffusion can be carried out over the entire length at once. An object of the present invention is to provide a method for manufacturing a shaped optical waveguide.

即ち、本発明は、光学的に透明な基板に、該基
板に浸透したとき該基板の屈折率が高くなる金属
イオンを選択的に浸透させて高屈折率部を形成す
る光導波路の製造方法において、前記基板の厚さ
がテーパ状に変化しており、かつ前記金属イオン
を電界拡散法を用いて前記基板の厚さの変化方向
に伸びるストライプ状に該基板の中に浸透させる
ことにより前記高屈折率部を形成したことを特徴
とするテーパ状光導波路の製造方法である。
That is, the present invention provides a method for manufacturing an optical waveguide in which a high refractive index portion is formed by selectively permeating an optically transparent substrate with metal ions that increase the refractive index of the substrate when permeated into the substrate. , the thickness of the substrate changes in a tapered shape, and the height is increased by infiltrating the metal ions into the substrate in a stripe shape extending in the direction of change in the thickness of the substrate using a field diffusion method. This is a method of manufacturing a tapered optical waveguide, characterized in that a refractive index portion is formed.

以下、本発明を図面を参照して詳細に説明す
る。第2図a〜dは本発明によるテーパ状光導波
路の製造方法の一実施例を説明するための工程図
である。第2図aに示したように、BK7ガラスか
らなる基板1は厚さがテーパ状に変化しており、
最も厚い部分で2mm、最も薄い部分で0.5mmであ
る。また、該基板1の一方の面にはアルミニウム
の真空蒸着により銀の拡散阻止層2が設けられて
おり、その一部はリフトオフ法を用いてストライ
プの方向が前記厚さの変化方向とほぼ一致する拡
散用のストライプパターン3を形成している。そ
して、第2図bに示したように、さらにその上に
は厚さが約5〜10μmの銀の薄膜層4及びアルミ
ニウムからなる陽電極5を順次真空蒸着により形
成し、該基板1の他方の面にはアルミニウムから
なる陰電極5′を真空蒸着により形成する。そこ
で、前記基板を約330℃に加熱器6を用いて加熱
すると共に、前記陽電極5と陰電極5′の間に約
100Vの直流電圧を印加して約2時間の電界拡散
を行なうことにより銀イオンを基板1の中に拡散
させる。このとき、印加される電界の強度は基板
1の厚さが厚いほど弱く、厚さが薄いほど強い。
したがつて、拡散深さは基板1の厚さが厚いほど
浅く、厚さが薄いほど深くなる。その結果、基板
1にはテーパ状高屈折率部7,7′が形成され、
第2図aに示した基板1の両端面A,Bではそれ
ぞれ第2図c,dに示したように、拡散深さが約
30μm及び約10μmの異なつた大きさの断面形状
を示している。ここで、この断面形状は、前記拡
散用ストライプ3の幅が前記基板1の厚さが薄く
なるほど広くなつているのでほぼ半円形状とな
る。このテーパ状高屈折率部7,7′がテーパ状
光導波路となる。
Hereinafter, the present invention will be explained in detail with reference to the drawings. FIGS. 2a to 2d are process diagrams for explaining one embodiment of the method for manufacturing a tapered optical waveguide according to the present invention. As shown in Figure 2a, the substrate 1 made of BK7 glass has a tapered thickness.
The thickest part is 2mm and the thinnest part is 0.5mm. Further, a silver diffusion prevention layer 2 is provided on one surface of the substrate 1 by vacuum evaporation of aluminum, and a part of the silver diffusion prevention layer 2 is formed using a lift-off method so that the direction of the stripes is almost the same as the direction of change in the thickness. A stripe pattern 3 for diffusion is formed. Then, as shown in FIG. 2b, a silver thin film layer 4 with a thickness of about 5 to 10 μm and a positive electrode 5 made of aluminum are successively formed thereon by vacuum evaporation. A negative electrode 5' made of aluminum is formed on the surface by vacuum evaporation. Therefore, the substrate is heated to about 330° C. using a heater 6, and the space between the positive electrode 5 and the negative electrode 5' is approximately
Silver ions are diffused into the substrate 1 by applying a DC voltage of 100 V and performing electric field diffusion for about 2 hours. At this time, the strength of the applied electric field is weaker as the thickness of the substrate 1 is thicker, and stronger as the thickness is thinner.
Therefore, the thicker the substrate 1, the shallower the diffusion depth, and the thinner the substrate 1, the deeper the diffusion depth. As a result, tapered high refractive index portions 7, 7' are formed on the substrate 1,
At both end surfaces A and B of the substrate 1 shown in FIG. 2a, the diffusion depth is approximately 100 nm, as shown in FIGS. 2c and d, respectively.
It shows cross-sectional shapes of different sizes, 30 μm and about 10 μm. Here, this cross-sectional shape becomes approximately semicircular because the width of the diffusion stripe 3 becomes wider as the thickness of the substrate 1 becomes thinner. These tapered high refractive index portions 7, 7' become tapered optical waveguides.

上述のように、本実施例によるテーパ状光導波
路の製造方法によれば、従来よりも製造時間を大
幅に短縮することができ、かつ一度に全長にわた
つて拡散を行なうことができるため製造プロセス
を簡略化することができる。
As mentioned above, according to the method for manufacturing a tapered optical waveguide according to this embodiment, the manufacturing time can be significantly shortened compared to the conventional method, and the manufacturing process can be simplified because diffusion can be performed over the entire length at once. can be simplified.

以上、本発明の一実施例について述べた。ここ
で、本実施例において、金属イオンとして銀イオ
ンを用いたが、タリウムイオンやリチウムイオン
等を用いてもよい。また、基板に金属イオンを浸
透させる方法としてドライプロセスを用いたが、
溶融塩中の金属イオンを浸透させるウエツトプロ
セスを用いてもよい。さらに、拡散温度を330℃
としたが、拡散温度は基板の中に金属イオンが浸
透できる温度以上であり、かつ基板の歪温度以下
であればよい。また、基板の厚さが0.5mmから2
mmまで変化するものを用いたが、これ以外のテー
パ形状であつてもよい。
An embodiment of the present invention has been described above. Here, in this example, silver ions were used as metal ions, but thallium ions, lithium ions, etc. may also be used. In addition, a dry process was used to infiltrate metal ions into the substrate, but
A wet process in which metal ions in the molten salt permeate may be used. Additionally, the diffusion temperature was increased to 330℃.
However, the diffusion temperature only needs to be higher than the temperature at which metal ions can penetrate into the substrate and lower than the strain temperature of the substrate. Also, the thickness of the board is from 0.5mm to 2mm.
Although a tapered shape that varies up to mm was used, other tapered shapes may be used.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図a〜dは従来法によるテーパ状光導波路
の製造方法を説明する工程図、第2図a〜dは本
発明によるテーパ状光導波路の製造方法の一実施
例を説明する工程図である。 101……拡散阻止層、102……拡散用スト
ライプパターン、103……基板、104……溶
融塩、105,105′……光導波路、1……基
板、2……拡散阻止層、3……拡散用ストライプ
パターン、4……銀の薄膜層、5……陽電極、
5′……陰電極、6……加熱器、7,7′……高屈
折率部。
1A to 1D are process diagrams for explaining a conventional method for manufacturing a tapered optical waveguide, and FIGS. 2A to 2D are process diagrams for explaining an embodiment of a method for manufacturing a tapered optical waveguide according to the present invention. be. 101...Diffusion blocking layer, 102...Diffusion stripe pattern, 103...Substrate, 104...molten salt, 105, 105'...Optical waveguide, 1...Substrate, 2...Diffusion blocking layer, 3... Diffusion stripe pattern, 4... Silver thin film layer, 5... Positive electrode,
5'... cathode, 6... heater, 7,7'... high refractive index section.

Claims (1)

【特許請求の範囲】[Claims] 1 光学的に透明な基板に、該基板に浸透したと
き該基板の屈折率が高くなる金属イオンを選択的
に浸透させて高屈折率部を形成する光導波路の製
造方法において、前記基板の厚さがテーパ状に変
化しており、かつ前記金属イオンを電界拡散法を
用いて前記基板の厚さの変化方向に伸びるストラ
イプ状に該基板の中に浸透させることにより前記
高屈折率部を形成したことを特徴とするテーパ状
光導波路の製造方法。
1. A method for manufacturing an optical waveguide in which a high refractive index portion is formed by selectively permeating an optically transparent substrate with metal ions that increase the refractive index of the substrate when permeated into the substrate, wherein the thickness of the substrate is The high refractive index portion is formed by infiltrating the metal ions into the substrate in a stripe shape extending in the direction of change in the thickness of the substrate using an electric field diffusion method. A method for manufacturing a tapered optical waveguide, characterized in that:
JP57001640A 1982-01-08 1982-01-08 Production of tapered optical waveguide Granted JPS58118610A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57001640A JPS58118610A (en) 1982-01-08 1982-01-08 Production of tapered optical waveguide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57001640A JPS58118610A (en) 1982-01-08 1982-01-08 Production of tapered optical waveguide

Publications (2)

Publication Number Publication Date
JPS58118610A JPS58118610A (en) 1983-07-14
JPS6160401B2 true JPS6160401B2 (en) 1986-12-20

Family

ID=11507118

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57001640A Granted JPS58118610A (en) 1982-01-08 1982-01-08 Production of tapered optical waveguide

Country Status (1)

Country Link
JP (1) JPS58118610A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0273012U (en) * 1988-11-25 1990-06-04
WO2020255369A1 (en) * 2019-06-21 2020-12-24 株式会社テクノシステム Self-sufficient building system and infrastructure development device for self-sufficient building system

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60237405A (en) * 1984-05-09 1985-11-26 Nippon Sheet Glass Co Ltd Manufacture of optical element by ion exchange
CA1323194C (en) * 1987-07-28 1993-10-19 Amaresh Mahapatra Process for tapering waveguides
JP2586572B2 (en) * 1988-05-09 1997-03-05 ブラザー工業株式会社 Refractive index distributed optical coupler and method for producing the same
FI82989C (en) * 1989-04-13 1991-05-10 Nokia Oy Ab FRAMEWORK FOR FRAMING REQUIREMENTS AND INSPECTION.
KR20070091288A (en) 2004-11-17 2007-09-10 컬러 칩 (이스라엘) 리미티드. Process and method of waveguide tapering and optimized waveguide structure formation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0273012U (en) * 1988-11-25 1990-06-04
WO2020255369A1 (en) * 2019-06-21 2020-12-24 株式会社テクノシステム Self-sufficient building system and infrastructure development device for self-sufficient building system

Also Published As

Publication number Publication date
JPS58118610A (en) 1983-07-14

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