JPS6166970U - - Google Patents

Info

Publication number
JPS6166970U
JPS6166970U JP15106884U JP15106884U JPS6166970U JP S6166970 U JPS6166970 U JP S6166970U JP 15106884 U JP15106884 U JP 15106884U JP 15106884 U JP15106884 U JP 15106884U JP S6166970 U JPS6166970 U JP S6166970U
Authority
JP
Japan
Prior art keywords
semiconductor laser
oscillation light
garnet film
built
magnetic field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15106884U
Other languages
English (en)
Other versions
JPH0143873Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1984151068U priority Critical patent/JPH0143873Y2/ja
Priority to US06/715,954 priority patent/US4686678A/en
Priority to DE8585302090T priority patent/DE3583453D1/de
Priority to EP85302090A priority patent/EP0158475B1/en
Publication of JPS6166970U publication Critical patent/JPS6166970U/ja
Application granted granted Critical
Publication of JPH0143873Y2 publication Critical patent/JPH0143873Y2/ja
Expired legal-status Critical Current

Links

Description

【図面の簡単な説明】
第1図は本考案半導体レーザ装置の実施例の構
成を示す図、第2図、第3図は応用例を示す構成
図である。 1…半導体レーザチツプ、2…レーザ活性領域
、3…誘電体膜、4…ガーネツト膜、5…バイア
ス磁気、12…半導体レーザ、15…磁石。

Claims (1)

    【実用新案登録請求の範囲】
  1. 半導体レーザを内蔵し、該半導体レーザの発振
    光の出射端面に成膜法によつて形成されたガーネ
    ツト膜を有し、該ガーネツト膜に対して、前記半
    導体レーザの発振光が透過する方向に磁場を印加
    する手段を配したことを特徴とする光アイソレー
    タ付半導体レーザ装置。
JP1984151068U 1984-03-27 1984-10-05 Expired JPH0143873Y2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP1984151068U JPH0143873Y2 (ja) 1984-10-05 1984-10-05
US06/715,954 US4686678A (en) 1984-03-27 1985-03-25 Semiconductor laser apparatus with isolator
DE8585302090T DE3583453D1 (de) 1984-03-27 1985-03-26 Halbleiterlaservorrichtung mit einem isolator.
EP85302090A EP0158475B1 (en) 1984-03-27 1985-03-26 Semiconductor laser apparatus with isolator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1984151068U JPH0143873Y2 (ja) 1984-10-05 1984-10-05

Publications (2)

Publication Number Publication Date
JPS6166970U true JPS6166970U (ja) 1986-05-08
JPH0143873Y2 JPH0143873Y2 (ja) 1989-12-19

Family

ID=30709199

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1984151068U Expired JPH0143873Y2 (ja) 1984-03-27 1984-10-05

Country Status (1)

Country Link
JP (1) JPH0143873Y2 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004088129A (ja) * 2003-12-08 2004-03-18 Sony Corp レーザ光発生装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60212708A (ja) * 1984-04-06 1985-10-25 Hitachi Ltd 磁気光学薄膜の形成法
JPS60246298A (ja) * 1984-05-16 1985-12-05 Hitachi Ltd 複合薄膜構造

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60212708A (ja) * 1984-04-06 1985-10-25 Hitachi Ltd 磁気光学薄膜の形成法
JPS60246298A (ja) * 1984-05-16 1985-12-05 Hitachi Ltd 複合薄膜構造

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004088129A (ja) * 2003-12-08 2004-03-18 Sony Corp レーザ光発生装置

Also Published As

Publication number Publication date
JPH0143873Y2 (ja) 1989-12-19

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