JPS6174196A - Manufacture of magnetic bubble memory element - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing a magnetic bubble memory element used as a storage device of an electronic computing device or the like.

In magnetic bubble memory devices, higher storage density is required due to the recent increase in the amount of information and miniaturization of devices, but bubble transfer/4 turns using conventional soft magnetic thin films has a period of 4 μm. Up to 40 is becoming a trap to be put into practical use. When this analogy of pull transfer/lean is further reduced to a period of 4 μm or less for higher density, it becomes difficult to form fine details of the pull transfer due to the limitations of optical phosphorography.

[Conventional technology]

For this reason, a method as shown in FIG. 2 has been developed as a method for creating fine patterns. In this method, first, a spacer 2 such as 810□ and a thin film 3 of a non-magnetic material are formed on the bubble crystal 1 as shown in figure a, and then a mask 4 is formed with a resist as shown in figure b. Ion etching is performed to create a pattern 5 of non-magnetic material as shown in Figure 0. Next, as shown in Figure d, the mask 4 is removed and a soft magnetic gutter 76 is created. The soft magnetic putter 76 formed in this way has a steep step 7 formed by the putter 75 made of a non-magnetic material, and this step makes it possible to give directionality to the transfer of bubbles. A small bubble transfer can form a turf.

[Problem that the invention seeks to solve]

In the above-mentioned method for making a pattern, when forming the 79 turns 5 of non-magnetic material by ion etching as shown in Fig. 0, there is a phenomenon that the periphery of the mask 4 is particularly easily etched as shown in Fig. 3. There was a problem in that the spacer 2 was not flat, and therefore the distance between the bubble crystal 1 and the soft magnetic nozzle 76 was uneven, making it impossible to obtain good transfer characteristics.

[Means for solving problems]

The present invention provides a method for manufacturing a magnetic bubble memory element that solves the above-mentioned problems.The method includes forming a thin film made of a non-magnetic material on a bubble crystal, and then depositing a VCtd glaze material on the thin film. After forming a mask, selective plasma etching is performed to form a pattern 1 of non-magnetic material, and then spacers are formed.
On top of that, a soft magnetic thin film/arm turn that is equal to or thinner than the non-magnetic E-turn is formed so that a part of the non-magnetic pattern is parallel to the above-mentioned non-magnetic pattern and is magnetically discontinuous due to the edge portion of the non-magnetic E-turn. A method of manufacturing a magnetic bubble memory element is characterized in that the magnetic bubble memory element is formed.

[Effect]

The manufacturing method for the magnetic bubble memo 'J 8' is a puzzle transfer that gives direction to the bubble transfer by controlling the details of the shape of the soft magnetic thin film pattern by adding lean and steep steps using non-magnetic conductors, etc. In the process, if the non-magnetic pattern 7 is selectively etched to expose the crystal plane and then a spacer film is formed, the spacer film thickness can be particularly thinned, and the driving force of the fine soft magnetic thin film pattern can be improved. .

〔Example〕

Embodiments of the present invention will be described in detail below with reference to the drawings.

FIG. 1 shows a process diagram for explaining one embodiment of the present invention. In the figure, 10 is a bubble crystal, 11 is a thin film of non-magnetic material, 12 is a mask made of anti-magnetic Zuma etching material, 13 is non-magnetic/4 turf, 14 is a spacer, 1
5 shows soft magnetic thin film patterns, respectively.

The manufacturing method of the magnetic bubble memory element O in this embodiment O is as follows.
As shown in Figure a, a thin film 11 of a non-magnetic material such as Ti is formed on the bubble crystal 10.

Next, as shown in FIG. 1, a mask 12 made of a plasma etching resistant material is formed on the thin film 11 of nonmagnetic material. Next, dry etching is performed using a fluorocarbon-based material such as CF4 using sglazma to form a non-magnetic pattern 13 as shown in FIG. 1C.

In this case, due to the selectivity of plasma etching, the bubble crystal 10 is not etched and its flat crystal face is exposed. Next, as shown in Fig. 1d (using SIO□ etc., spacer 1 is
form 4. In this case, the spacer 14 can have a thin and uniform thickness because the underlying layer is formed by the flat surface of the bubble crystal. Finally, as shown in FIG. 1, the soft magnetic thin film/mother turf 15 for the bubble transfer path is formed to be equal to or thinner than the non-magnetic A-1713, and to partially overlap the non-magnetic pattern 13. is. By forming the soft magnetic thin film/stone in this way, the soft magnetic thin film pattern 7 has a magnetically discontinuous part formed by the second part of the nonmagnetic pattern, and the fine nine-turn details are formed in the soft magnetic thin film pattern 7. can be formed.

Note that since the M-Sho Cu alloy is a material that cannot be etched by the glazma etching process, the nonmagnetic pattern 13 is formed by performing glazma etching using the thin film 11KTi of the nonmagnetic material and using an At-Cu alloy as a mask. I can do it.

〔Effect of the invention〕

As explained above, according to the trap of the present invention, when forming a nonmagnetic pattern, the fluorocarbon system utilizes the selectivity of dry etching by sglazma to expose the flat surface of the papule crystal. The thickness of the formed hardener can be made thin and uniform, and the bubble transfer characteristics of the soft magnetic thin film pattern formed thereafter can be improved.

[Brief explanation of drawings]

FIG. 1 is a process diagram for explaining a method for manufacturing a magnetic bubble memory element of the present invention, FIG. 2 is a process diagram for explaining an example of a conventional method for manufacturing a magnetic bubble memory element, and FIG. FIG. 3 is a diagram for explaining a problem in step C in FIG. 2; In the figure, 10 is a bubble product, 11 is a thin film of non-magnetic material, 1
2 is a mask, 13 is a non-magnetic magnet, 14 is a spacer, and 15 is a soft magnetic thin film no-turn. Figure 1

Claims (1)

[Claims] 1. After forming a thin film made of a non-magnetic material on the bubble crystal, and then forming a mask with a plasma etching-resistant material on top of the thin film, selective plasma dry etching is performed to remove the non-magnetic material. A pattern is formed, then a spacer is formed, and a soft magnetic thin film pattern that is equal to or thinner than the non-magnetic pattern is formed thereon, overlapping the non-magnetic pattern, and being magnetically discontinuous due to the edge portion of the non-magnetic pattern. 1. A method of manufacturing a magnetic valve memory element, characterized in that the magnetic valve memory element is formed as follows. 2. The method for manufacturing a magnetic bubble memory element according to claim 1, characterized in that Ti is used as the non-magnetic material and Al-Cu is used as the plasma etching resistant material. Method.