JPS6177151A - optical recording medium - Google Patents
optical recording mediumInfo
- Publication number
- JPS6177151A JPS6177151A JP59198203A JP19820384A JPS6177151A JP S6177151 A JPS6177151 A JP S6177151A JP 59198203 A JP59198203 A JP 59198203A JP 19820384 A JP19820384 A JP 19820384A JP S6177151 A JPS6177151 A JP S6177151A
- Authority
- JP
- Japan
- Prior art keywords
- recording medium
- optical recording
- substrate
- layer
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims description 11
- 150000001408 amides Chemical class 0.000 claims description 8
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 21
- 239000010408 film Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- 229910002665 PbTe Inorganic materials 0.000 description 1
- 150000003869 acetamides Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum Chemical class 0.000 description 1
- 150000003950 cyclic amides Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 150000003948 formamides Chemical class 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/256—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers improving adhesion between layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2531—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising glass
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2532—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising metals
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2533—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins
Landscapes
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明はレーザビームを照射して局部的に加熱し、その
加熱部に穴、凹部もしくは凸部を形成することによって
記録する光学記録用媒体に関するものである。Detailed Description of the Invention (Industrial Application Field) The present invention relates to an optical recording medium that records by locally heating it by irradiating it with a laser beam and forming holes, depressions, or projections in the heated area. It is related to.
（従来の技＃）
基板上に形成された薄膜にレーザビームを照射して、ピ
ットを形成するよ′うにした光学的記録用媒体として、
従来よｐＴｅを使用することが知られている。Ｔｅは低
融点、低熱伝導度を有する為に、上記方法による記録に
おいて高い感度を示す。しかし、Ｔｅは酸化され易く、
酸化されると透明になシ記録が出来なくなるという問題
がある。(Conventional technique #) As an optical recording medium, pits are formed by irradiating a thin film formed on a substrate with a laser beam.
Conventionally, it has been known to use pTe. Since Te has a low melting point and low thermal conductivity, it exhibits high sensitivity in recording by the above method. However, Te is easily oxidized;
There is a problem that when it is oxidized, it becomes transparent and recording cannot be made.
上記問題点を改良したものとして、Ｔｅを合金化したも
の、Ｔｅの低酸化物、Ｔｅを有機膜中に分散させたもの
等がある（たとえば、特開昭りｊ−，７／ １０ＩＡ、
りｇ−ｓダ３Ｊｇ、 ！；７−９ｇ３９１Ｉ号公報）・
。As improvements to the above problems, there are those in which Te is alloyed, Te in low oxide form, and Te dispersed in an organic film (for example, in Japanese Patent Application Laid-Open No. 2003-101002, 7/10IA,
ri g-s da 3 Jg,! ;7-9g391I Publication)・
.
（発明の目的）
本発明者らは、感度、コントラスト、ピット形状等の特
性をさらに向上させた光学的記録媒体を提供するべく、
種々検討を行ない、本発明に到達した。(Objective of the Invention) The present inventors aimed to provide an optical recording medium with further improved characteristics such as sensitivity, contrast, and pit shape.
After various studies, we have arrived at the present invention.
（発明の構成）
すなわち１２本発明の要旨は、基板上に記録層を有する
光学的記録用媒体において、下引層として基板と記録層
の間にアミド類放電重合膜を設けてなる光学的記録媒体
にある。(Structure of the Invention) That is, 12 The gist of the present invention is to provide an optical recording medium having a recording layer on a substrate, in which an amide discharge polymerized film is provided between the substrate and the recording layer as an undercoat layer. It's in the medium.
以下、本発明の詳細な説明する。The present invention will be explained in detail below.
本発明に係る記録用媒体は、まず基板上に下引層として
アミド類放電重合膜を形成させてなる。The recording medium according to the present invention is obtained by first forming an amide discharge polymerized film as an undercoat layer on a substrate.
基板としては、ガラス、アクリル樹脂、ポリカーボネー
ト樹脂等のプラスチック、又はアルミニウム等の金属が
挙げられ、その厚みは一般いＶシ
に／〜／、５程度から選ばれる。Examples of the substrate include glass, plastics such as acrylic resins and polycarbonate resins, and metals such as aluminum, and the thickness thereof is generally selected from about V.about.5.
上記重合膜の形成は、アミド類のモノマーガスを導入し
た真空容器中でグロー放電を行なうことにより形成しつ
る。アミド類としては、アミド結合を有する有機化合物
であれば特に制限されないか、たとえばモノ又はジアル
キルアセトアミド、モノ又はジアルキルホルムアミド等
の直鎖アミド、Ｎ−アルキルーニーピロリドン等の環状
アミドが用いられ、好適にはジメチルアセトアミド（Ｄ
ＭＡＯ）、ジメチルホルムアミド（ＤＭＦ）、Ｎ−メチ
ル−ニーピロリドン（ＮＭＰＪ等が選ばれる。The above polymer film is formed by performing glow discharge in a vacuum container into which an amide monomer gas is introduced. The amides are not particularly limited as long as they are organic compounds having an amide bond, and linear amides such as mono- or dialkyl acetamides, mono- or dialkyl formamides, and cyclic amides such as N-alkyloonie pyrrolidone are preferably used. is dimethylacetamide (D
MAO), dimethylformamide (DMF), N-methyl-neepyrrolidone (NMPJ, etc.) are selected.
グロー放電に際しては、高周波法又は直流法の常法によ
ることができ、ラジカル及びイオン種を生成させること
により、アミド類の放電重合膜が形成される。基板温度
は、室温ないし基板の軟化点未満に保持される。このア
ミド類の放電重合膜の厚みは、通常３０″Ａ−ｏ、ａμ
程度。Glow discharge can be performed by a conventional method such as a high frequency method or a direct current method, and a discharge polymerized film of amides is formed by generating radicals and ionic species. The substrate temperature is maintained at room temperature or below the softening point of the substrate. The thickness of this discharge polymerized film of amides is usually 30″A-o, aμ
degree.
好ましくはｓｏ−、ｓｏｏ大程度である。Preferably it is so- or so-large.
ついで、この下引層上に、記録層が形成されるｉ記録層
としては、Ｔｅ 、 Ａｕ、 Ｔｉ又けｐｔ等を含む層
が挙げられるが、Ｔｅが最も一般的である。Next, a recording layer is formed on this undercoat layer. Examples of the i-recording layer include layers containing Te, Au, Ti-spread PT, etc., but Te is the most common.
Ｔｅを用いる場合について説明すると、Ｔｅの原料とし
てはＴｅ５１／ｄＴθを含む化合物、たとえばＰｂＴｅ
、 ＭｏＴｅｔ 、 Ｔｅｎｔ が用いられ、さらにＢ
ｉ、 Ｓθ等を含む化合物を他成分として目的に応じ加
えることもできる。To explain the case of using Te, the raw material for Te is a compound containing Te51/dTθ, such as PbTe.
, MoTet, and Tent are used, and B
Compounds containing i, Sθ, etc. may be added as other components depending on the purpose.
このＴｅを含む記録層の形成は、上記グロー放電により
、Ｔｅ原料を蒸発させて上記下引層上に非晶質Ｔｅ層を
作成することにより得られる。The recording layer containing Te can be formed by evaporating the Te raw material by the glow discharge to form an amorphous Te layer on the undercoat layer.
また、さらに熱処理を行ない、Ｔｅを結晶化させること
もできる。Further, it is also possible to further perform heat treatment to crystallize Te.
この記録層の厚みは、通常夕ＯＡ〜／μ程度、好ましく
は２ｏｏ−７ｏｏｏ久程度から選ばれる。The thickness of this recording layer is usually selected from about 200 to 700 μm, preferably about 200 to 7000 μm.
本発明に係る記録用媒体は、上記のように基板上に特定
の下引層を形成させてなるが、さらに、記録層の上にた
とえば無定形５ｉＯｙ 、 ＭｇＦｔ膜等を保護膜とし
て設けることもできる。The recording medium according to the present invention has a specific subbing layer formed on the substrate as described above, but it is also possible to provide a protective film such as an amorphous 5iOy or MgFt film on the recording layer. can.
本発明に係る光学的記録用媒体は、光デイスク記録媒体
として有用であり、レーザービームを照射して加熱する
ことにより、穴をあけ、又は凹もしくは凸部を形成させ
、又は相変態を利用して記録を行なうことができる。The optical recording medium according to the present invention is useful as an optical disk recording medium, and can be heated by irradiating with a laser beam to form holes, or to form concave or convex portions, or by utilizing phase transformation. recording.
（実施例）
以下、実施例により本発明を更に詳しく説明するが、本
発明が実施例のみに限定されるものでないことは勿論の
ことである。(Examples) Hereinafter, the present invention will be explained in more detail with reference to Examples, but it goes without saying that the present invention is not limited only to the Examples.
実施例／
ポリメチルメタクリレート（ＰＭＭＡ）Ｍｇ板を設置し
た真空容器を７×７０″Ｔｏ ｒｒまで排気１、ｆｃ後
、ＤＭＦモノマーガスを導入し、コイル状の電極（径１
ｇ０ｍｍ９６．３ターン、ピッチ１１ｍｍ ）に／ 、
３．３６ＭＨ２の高周波電圧を印加して放電を行なった
。Example / A vacuum vessel equipped with a polymethyl methacrylate (PMMA) Mg plate was evacuated to 7
g0mm96.3 turns, pitch 11mm)/,
A high frequency voltage of 3.36 MH2 was applied to cause discharge.
ＤＭＦモノ゛マーガス流量Ｊ ｓｃｃｍ ％ガス圧ｊ
Ｘ １０ Ｔｏｒｒ 放電電力ｉｏｏｗでＤＭＦ放
電重合膜の下引き層をコＯＯ久形成させた後、放
゛電条件は一定とし、Ｔｅをモリブデンボートから抵抗
加熱により蒸着速度λ１０λ／履で／分間蒸着すると、
約２ｓｏ”ｈのＴｅ含有ＤＭＦ放電重合膜ｉ；ＤＭＦ放
電重合膜下引き層の上に形成された。DMF monomer gas flow rate J sccm % gas pressure J
After forming the undercoat layer of the DMF discharge polymerized film for a long time with a discharge power of ioow of X 10 Torr, the
When the electrical conditions are constant and Te is deposited from a molybdenum boat by resistance heating at a deposition rate of λ10λ/min,
Approximately 2 so''h Te-containing DMF discharge polymerized film i; formed on a DMF discharge polymerized film subbing layer.
ＰＭＭＡ基板上に上記方法により成膜したものと、ＤＭ
Ｆ重合膜下引き層のないものとについて、媒体上ＩＡ
ｍＷの波長ざ、：ｊＯｎｍの半導体レーザーで記録した
ところ、後者ではＩ Ｏｎ５ｅｃ。A film formed by the above method on a PMMA substrate and a film formed by DM
For those without F polymer film subbing layer, IA on the medium
When recorded with a semiconductor laser with a wavelength of mW: jOnm, the latter had a wavelength of IOn5ec.
前者では３０ ｎ５ｅｃで記録ができ、ＤＭＦ下引き層
の効果が認められた。ピット形状も前者の方が優れてい
る。 ′
（発明の効果）
本発明に係る光゛学的記録用媒体は、感度、コントラス
トに優れ、ピット形状が良好であって実用上大変価値の
高いものである。In the former case, recording was possible at 30 n5ec, and the effect of the DMF undercoat layer was recognized. The former also has a better pit shape. (Effects of the Invention) The optical recording medium according to the present invention has excellent sensitivity, contrast, and good pit shape, and is of great practical value.
Claims (1)
て、下引層として基板と記録層の間にアミド類放電重合
膜を設けてなる光学的記録媒体。(1) An optical recording medium having a recording layer on a substrate, in which an amide discharge polymerized film is provided between the substrate and the recording layer as an undercoat layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59198203A JPS6177151A (en) | 1984-09-21 | 1984-09-21 | optical recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59198203A JPS6177151A (en) | 1984-09-21 | 1984-09-21 | optical recording medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6177151A true JPS6177151A (en) | 1986-04-19 |
Family
ID=16387194
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59198203A Pending JPS6177151A (en) | 1984-09-21 | 1984-09-21 | optical recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6177151A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4900525A (en) * | 1986-08-25 | 1990-02-13 | Gte Laboratories Incorporated | Chemical vapor deposition reactor for producing metal carbide or nitride whiskers |
-
1984
- 1984-09-21 JP JP59198203A patent/JPS6177151A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4900525A (en) * | 1986-08-25 | 1990-02-13 | Gte Laboratories Incorporated | Chemical vapor deposition reactor for producing metal carbide or nitride whiskers |
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