JPS6192046U - - Google Patents

Info

Publication number
JPS6192046U
JPS6192046U JP17672984U JP17672984U JPS6192046U JP S6192046 U JPS6192046 U JP S6192046U JP 17672984 U JP17672984 U JP 17672984U JP 17672984 U JP17672984 U JP 17672984U JP S6192046 U JPS6192046 U JP S6192046U
Authority
JP
Japan
Prior art keywords
sample stage
gas
semiconductor
flowed
blades
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17672984U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP17672984U priority Critical patent/JPS6192046U/ja
Publication of JPS6192046U publication Critical patent/JPS6192046U/ja
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の実施例の縦断面図、第2図は
第1図の点線断面図、第3図、第5図は本考案の
他の実施例の縦断面図、第4図は第3図の点線断
面図、第6図は従来の装置の縦断面図である。 1……駆動用モータ、2……ウエハ、3……試
料台、4……回転軸、7……歯車、9……羽根。
FIG. 1 is a longitudinal sectional view of an embodiment of the present invention, FIG. 2 is a sectional view taken along the dotted line in FIG. 1, FIGS. 3 and 5 are longitudinal sectional views of other embodiments of the invention, and FIG. FIG. 3 is a sectional view taken along the dotted line, and FIG. 6 is a longitudinal sectional view of the conventional device. 1... Drive motor, 2... Wafer, 3... Sample stage, 4... Rotating shaft, 7... Gear, 9... Vane.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 試料台に半導体ウエハを載せ、前記試料台の上
方に設けられたガス流入部より反応性気体を流し
こみ、化学的作用によりウエハ表面に成膜を行う
半導体常圧縦型CVD装置において、ウエハを保
持する試料台を回転可能に支持し、ガスの運動エ
ネルギーを用いて前記試料台を回転させるために
羽根を設けたことを特徴とする半導体常圧縦型C
VD装置。
A semiconductor wafer is placed on a sample stage, and a reactive gas is flowed in from a gas inlet provided above the sample stage to chemically form a film on the wafer surface. Semiconductor atmospheric pressure vertical type C, characterized in that it rotatably supports a sample stage to be held and is provided with blades for rotating the sample stage using the kinetic energy of gas.
VD device.
JP17672984U 1984-11-22 1984-11-22 Pending JPS6192046U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17672984U JPS6192046U (en) 1984-11-22 1984-11-22

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17672984U JPS6192046U (en) 1984-11-22 1984-11-22

Publications (1)

Publication Number Publication Date
JPS6192046U true JPS6192046U (en) 1986-06-14

Family

ID=30734322

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17672984U Pending JPS6192046U (en) 1984-11-22 1984-11-22

Country Status (1)

Country Link
JP (1) JPS6192046U (en)

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