JPS62109704U - - Google Patents

Info

Publication number
JPS62109704U
JPS62109704U JP19957185U JP19957185U JPS62109704U JP S62109704 U JPS62109704 U JP S62109704U JP 19957185 U JP19957185 U JP 19957185U JP 19957185 U JP19957185 U JP 19957185U JP S62109704 U JPS62109704 U JP S62109704U
Authority
JP
Japan
Prior art keywords
unit
frame
electrodialysis cell
anode
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19957185U
Other languages
English (en)
Other versions
JPH0341783Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1985199571U priority Critical patent/JPH0341783Y2/ja
Publication of JPS62109704U publication Critical patent/JPS62109704U/ja
Application granted granted Critical
Publication of JPH0341783Y2 publication Critical patent/JPH0341783Y2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Separation Using Semi-Permeable Membranes (AREA)

Description

【図面の簡単な説明】
第１図及び第２図は本考案の電気透析槽の構成
の一例を説明するための模式図、第３図は電極枠
の一部を切り欠くことによつてユニツトに取つ手
を設ける例、第４図は３室型脱塩装置用透析槽の
模式図、第５図は第４図に用いられるユニツトの
展開図である。 １……切り欠き、３……段違い部。

Claims (1)

  1. 【実用新案登録請求の範囲】 １ 陽極枠と陰極枠との間に、膜と室枠とを交互
    に積層して一体化したユニツトを配置して締付て
    なる電気透析槽において、該ユニツトの側面に切
    り欠き１及び／又は段違い部２を形成し、かつ、
    陽極枠又は陰極枠の少なくちもいずれか一方の枠
    に上記ユニツトの膜に平行する面の形状に符合す
    る形状の凹部を設けることにより、ユニツトの陽
    極側と陰極側とを逆にして装着しようとするとき
    に正しく装着できないようにした電気透析セル構
    造。 ２ ユニツトの膜に平行な電極枠との接触面が線
    対称でない形状である実用新案登録請求の範囲第
    １項記載の電気透析セル構造。 ３ ユニツトの膜に平行な電極枠との接触面が、
    陽極枠側と陰極枠側で異なる形状である実用新案
    登録請求の範囲第１項記載の電気透析セル構造。 ４ ユニツトの一部に取つ手を設けることを特徴
    とする、実用新案登録請求の範囲第１項から第３
    項のいずれか１項に記載の電気透析セル構造。
JP1985199571U 1985-12-27 1985-12-27 Expired JPH0341783Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1985199571U JPH0341783Y2 (ja) 1985-12-27 1985-12-27

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1985199571U JPH0341783Y2 (ja) 1985-12-27 1985-12-27

Publications (2)

Publication Number Publication Date
JPS62109704U true JPS62109704U (ja) 1987-07-13
JPH0341783Y2 JPH0341783Y2 (ja) 1991-09-02

Family

ID=31161320

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1985199571U Expired JPH0341783Y2 (ja) 1985-12-27 1985-12-27

Country Status (1)

Country Link
JP (1) JPH0341783Y2 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6428902U (ja) * 1987-08-11 1989-02-21

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6392257B1 (en) 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
KR20030011083A (ko) 2000-05-31 2003-02-06 모토로라 인코포레이티드 반도체 디바이스 및 이를 제조하기 위한 방법
WO2002009187A2 (en) 2000-07-24 2002-01-31 Motorola, Inc. Heterojunction tunneling diodes and process for fabricating same
US20020096683A1 (en) 2001-01-19 2002-07-25 Motorola, Inc. Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
WO2002082551A1 (en) 2001-04-02 2002-10-17 Motorola, Inc. A semiconductor structure exhibiting reduced leakage current
US6992321B2 (en) 2001-07-13 2006-01-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
US7019332B2 (en) 2001-07-20 2006-03-28 Freescale Semiconductor, Inc. Fabrication of a wavelength locker within a semiconductor structure
US6855992B2 (en) 2001-07-24 2005-02-15 Motorola Inc. Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
US20030034491A1 (en) 2001-08-14 2003-02-20 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices for detecting an object
US20030071327A1 (en) 2001-10-17 2003-04-17 Motorola, Inc. Method and apparatus utilizing monocrystalline insulator
US6916717B2 (en) 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
US7169619B2 (en) 2002-11-19 2007-01-30 Freescale Semiconductor, Inc. Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
US6885065B2 (en) 2002-11-20 2005-04-26 Freescale Semiconductor, Inc. Ferromagnetic semiconductor structure and method for forming the same
US7020374B2 (en) 2003-02-03 2006-03-28 Freescale Semiconductor, Inc. Optical waveguide structure and method for fabricating the same
US6965128B2 (en) 2003-02-03 2005-11-15 Freescale Semiconductor, Inc. Structure and method for fabricating semiconductor microresonator devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6428902U (ja) * 1987-08-11 1989-02-21

Also Published As

Publication number Publication date
JPH0341783Y2 (ja) 1991-09-02

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