JPS62109976A - Member covered with cubic boron nitride - Google Patents
Member covered with cubic boron nitrideInfo
- Publication number
- JPS62109976A JPS62109976A JP25040985A JP25040985A JPS62109976A JP S62109976 A JPS62109976 A JP S62109976A JP 25040985 A JP25040985 A JP 25040985A JP 25040985 A JP25040985 A JP 25040985A JP S62109976 A JPS62109976 A JP S62109976A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- boron nitride
- cubic boron
- silicon
- nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052582 BN Inorganic materials 0.000 title claims abstract description 92
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 title claims abstract description 92
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 25
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 14
- 150000004767 nitrides Chemical class 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 23
- 239000010703 silicon Substances 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 7
- 229910000838 Al alloy Inorganic materials 0.000 claims description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 4
- 230000000737 periodic effect Effects 0.000 claims description 4
- 239000006104 solid solution Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 150000001247 metal acetylides Chemical class 0.000 claims description 2
- 239000010410 layer Substances 0.000 abstract description 171
- 239000011247 coating layer Substances 0.000 abstract description 14
- 229910045601 alloy Inorganic materials 0.000 abstract description 7
- 239000000956 alloy Substances 0.000 abstract description 7
- 229910002796 Si–Al Inorganic materials 0.000 abstract 2
- 230000001105 regulatory effect Effects 0.000 abstract 2
- 230000032798 delamination Effects 0.000 abstract 1
- 239000002356 single layer Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 32
- 239000000463 material Substances 0.000 description 15
- 239000000843 powder Substances 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 13
- 239000000919 ceramic Substances 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 229910003460 diamond Inorganic materials 0.000 description 6
- 239000010432 diamond Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 229910000997 High-speed steel Inorganic materials 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- -1 iron group metals Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000011195 cermet Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 2
- 101100323029 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) alc-1 gene Proteins 0.000 description 1
- 229910005091 Si3N Inorganic materials 0.000 description 1
- 229910010067 TiC2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 238000005255 carburizing Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000000474 nursing effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000005491 wire drawing Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Cutting Tools, Boring Holders, And Turrets (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、切削工具又は耐摩耗工具などの工具部品及び
半導体基板などの電子機器用部品として利用できるt重
病窒化ホウ素被覆部材に関するものである。Detailed Description of the Invention (Field of Industrial Application) The present invention relates to a seriously ill boron nitride-coated member that can be used as tool parts such as cutting tools or wear-resistant tools, and parts for electronic devices such as semiconductor substrates. .
(従来の技術)
立方晶窒化ホウ素は、ダイヤモンドに次ぐ高硬度性、高
熱伝導性及び高゛1[気絶縁性を有し、しかもダイヤモ
ンドよりもすぐれた化学的安定性、耐酸化性、耐熱性及
び#熱的衝撃性を有している。(Prior art) Cubic boron nitride has high hardness, high thermal conductivity, and high gas insulation properties that are second only to diamond, and also has better chemical stability, oxidation resistance, and heat resistance than diamond. and # has thermal shock properties.
また、ダイヤモンドは、鉄族金属との親和性が高いのに
対して立方晶窒化ホウ素は、鉄族金属との親和性が低い
ことから、例えば鉄族金属材料を切削又は研削するため
の工具材料として注目されている。このように、立方晶
窒化ホウ素は、すぐれた特性を有しているが、脆性材料
であり、しかも難焼結性材料であることから形状及び用
途に制約を受けている。In addition, diamond has a high affinity with iron group metals, whereas cubic boron nitride has a low affinity with iron group metals, so it can be used as a tool material for cutting or grinding iron group metal materials, for example. It is attracting attention as As described above, although cubic boron nitride has excellent properties, it is a brittle material and is difficult to sinter, so its shape and use are limited.
そこで、立方晶窒化ホウ素を被覆層として基体の表面に
形成してなる被覆部材によって形状及び用途の制約を解
決しようという試みがなされている。その代表例として
、立方晶窒化ホウ素の被覆層を窒化ケイ素焼結体の基体
の表面に直接形成させてなる被覆部材が特開昭57−9
5881号公報に開示されている。Therefore, attempts have been made to solve the shape and usage constraints by using a covering member formed by forming a covering layer of cubic boron nitride on the surface of the substrate. As a typical example, a coating member made by forming a cubic boron nitride coating layer directly on the surface of a silicon nitride sintered body is disclosed in Japanese Patent Laid-Open No. 57-9.
It is disclosed in Japanese Patent No. 5881.
(発明が解決しようとする問題点)
特開昭57−95881号公報に開示の被覆部材は、次
のような問題がある。窒化ケイ素焼結体は、焼結を促進
させるために、例えば
A1203 、MgO、Y203 fZど0)、主ト
シテ金属酸化物からなる焼結助剤を含有している。この
ように焼結助剤を含有した窒化ケイ素焼結体の基体の表
面に直接立方晶窒化ホウ素からなる被覆層を形成させて
なる被覆部材は、基体の表面にも焼結助剤が存在し、こ
の焼結助剤が六方晶窒化ホウ素又は非晶質窒化ホウ素な
どの窒化ホウ素の立方晶窒化ホウ素への転換を阻害し、
又、基体と被覆層との付着性を低下させるという問題が
ある。(Problems to be Solved by the Invention) The covering member disclosed in JP-A-57-95881 has the following problems. The silicon nitride sintered body contains a sintering aid mainly composed of metal oxides such as A1203, MgO, Y203 fZ, etc. to promote sintering. In this way, a coated member in which a coating layer made of cubic boron nitride is directly formed on the surface of a silicon nitride sintered body substrate containing a sintering aid, has the sintering aid present on the surface of the substrate as well. , the sintering aid inhibits the conversion of boron nitride, such as hexagonal boron nitride or amorphous boron nitride, to cubic boron nitride,
Furthermore, there is a problem in that the adhesion between the substrate and the coating layer is reduced.
本発明は、と述のような問題点を解決したもので、具体
的には、基体と立方晶窒化ホウ素からなる外層との間に
窒化ホウ素の立方晶窒化ホウ素への転換を促進させる効
果があり、しかも高温での安定性及び外層との付着性に
すぐれた中間層を介在させてなる立方晶窒化ホウ素被覆
部材の提供を目的とするものである。The present invention solves the above-mentioned problems. Specifically, the present invention has the effect of promoting the conversion of boron nitride to cubic boron nitride between the substrate and the outer layer made of cubic boron nitride. The object of the present invention is to provide a cubic boron nitride coated member which has an intermediate layer interposed therein which has excellent stability at high temperatures and excellent adhesion to the outer layer.
(問題点を解決するための手段)
基体の表面に立方晶窒化ホウ素からなる被覆層が形成さ
れる場合は、2つの形態があり、第1の形態は、立方晶
窒化ホウ素が合成されて、その立方晶窒化ホウ素が被覆
層として基体の表面に付着形成される場合であり、第2
の形態は、非晶質窒化ホウ素又は六方晶窒化ホウ素など
の窒化ホウ素が基体の表面に被覆層として付着形成され
ると同時又は被覆層として形成された後に、窒化ホウ素
が立方晶窒化ホウ素に転換する場合である。この内、第
1の形態に対しては、立方晶窒化ホウ素の付着しやすい
物質が必要であり、第2の形f8に対しては、窒化ホウ
素の立方晶窒化ホウ素への転換にすぐれる物質が必要で
ある0本発明者は、この第1の形態と第2の形態に対し
て必要な物質及び工具部品などのらデ酷な用途に耐える
ことがでjる物質について検討した所、酸素又は酸素含
有化合物は、第1の形態及び第2の形態に対して最も障
害になること、並びに炭素及び炭素含有化合物も第1の
形態及び第2の形態に対して好ましくないということか
ら、更に検討した結果、ケイ素、ケイ素アルミニウム合
金、ケイ素窒化物又はケイ素アルミニウム窒化物がJ:
述の第1の形態及び第2の形態などに対して満足させる
ことができるという知見を得るに至り、本発明を完成し
たものである。(Means for solving the problem) When a coating layer made of cubic boron nitride is formed on the surface of a substrate, there are two forms. In the first form, cubic boron nitride is synthesized, This is the case when the cubic boron nitride is deposited on the surface of the substrate as a coating layer, and the second
The form of boron nitride, such as amorphous boron nitride or hexagonal boron nitride, is converted to cubic boron nitride at the same time or after it is deposited as a coating layer on the surface of the substrate. This is the case. Among these, for the first form, a substance to which cubic boron nitride easily adheres is required, and for the second form f8, a substance that is excellent in converting boron nitride to cubic boron nitride is required. The present inventor has studied the materials necessary for the first form and the second form and materials that can withstand harsh uses such as tool parts, and found that oxygen Further, since oxygen-containing compounds are the most impediment to the first form and the second form, and carbon and carbon-containing compounds are also unfavorable to the first form and the second form, As a result of investigation, silicon, silicon aluminum alloy, silicon nitride, or silicon aluminum nitride is J:
The present invention has been completed by finding that the first and second embodiments described above can be satisfied.
すなわち、本発明の立方晶窒化ホウ素被覆部材は、基体
の表面に立方晶窒化ホウ素を主成分とする外層を形成し
てなる被W1部材において、前記基体と前記外層との間
に1層又は多層で構成される中間層を介在させ、前記外
層に隣接する該中間層がケイ素、ケイ素アルミニウム合
金、ケイ素アルミニウム窒化物又はケイ素窒化物の中の
少なくとも1種からなるケイ素含有物層によって形成さ
れていることを特徴とするものである。That is, in the cubic boron nitride-coated member of the present invention, in the W1 member formed by forming an outer layer mainly composed of cubic boron nitride on the surface of a base, one layer or multiple layers are provided between the base and the outer layer. interposed therebetween, and the intermediate layer adjacent to the outer layer is formed of a silicon-containing material layer consisting of at least one of silicon, silicon-aluminum alloy, silicon-aluminum nitride, or silicon nitride. It is characterized by this.
ここで用いる基体は、後述する製造条件に耐えることが
回部な材種ならば特別に制限されるものでなく、例えば
各種の全屈9合金、焼結ハイス。The substrate used here is not particularly limited as long as it is made of a material that can withstand the manufacturing conditions described below, such as various types of full-flexure 9 alloys and sintered high speed steel.
超硬合金、サーメット又はセラミックスなどを用途によ
って使い分けることができる。Cemented carbide, cermet, ceramics, etc. can be used depending on the purpose.
立方晶窒化ホウ素を1成分とする外層は、μm屯位の薄
膜状の層からam単位の厚膜状の層として形成すること
ができる。この外層の成分は、立方晶窒化ホウ素又は立
方品窄化ホウ素の他にFe。The outer layer containing cubic boron nitride as one component can be formed as a thin layer on the order of μm to a thick layer on the order of am. The components of this outer layer include Fe in addition to cubic boron nitride or cubic boron.
Ni、Co、A文、Si及び周期律表4a。Ni, Co, A-text, Si and periodic table 4a.
5a、6a族金属もしくはAn 、 S iの窒化物あ
るいは周期律表4a、5a、6a族金属の炭化物、窒化
物、ホウ化物及びこれらの相互固溶体の中の少なくとも
1種の結合相を含有させたものにすることができる。こ
の内、立方晶窒化ホウ素からなる外層の場合は、立方晶
窒化ホウ素が脆性材料であることから0.1gm以北〜
15ルm以丁の層厚1好ましくは0.5μm以1.−t
o鉢m以下の層厚でなる薄膜状にするのがよく、ケ重病
窒化ホウMの他に結合相を含有した外層の場合は、0.
05m■以と〜0.8一層以下の層厚でなるIγ脱膜状
することもできる。Contains at least one binder phase selected from group 5a, 6a metals or nitrides of An, Si, or carbides, nitrides, borides of group 4a, 5a, and 6a metals of the periodic table, and mutual solid solutions thereof. can be made into something. Among these, in the case of the outer layer made of cubic boron nitride, since cubic boron nitride is a brittle material,
Layer thickness of 15 μm or more, preferably 0.5 μm or more. -t
It is preferable to form a thin film with a layer thickness of 0.0 m or less, and in the case of an outer layer containing a binder phase in addition to boron nitride M, a layer thickness of 0.0 m or less is preferable.
It is also possible to form an Iγ film with a layer thickness of 0.5 m or less and 0.8 m or less.
これらの基体と外層との間に介在させる中間層は、使用
する基体の材種又は本発明の被覆部材の用途もしくは形
状によって各種の41!成にすることができる。The intermediate layer interposed between these substrates and the outer layer may be of various types depending on the material of the substrate used or the use or shape of the covering member of the present invention. can be made into
例えば、第1の構成としては、中間層がケイ素、ケイ素
アルミニウム合金、ケイ未アルミニウム窒化物又はケイ
累窒化物の中の少なくとも1種のケイ素含有物層からな
るものである。この場合は、基体と外層との間にケイ素
含有物層が介在しているもので、ケイ素含有物層との付
着性にすぐれている15体、例えばAfLN系セラミッ
クス。For example, in a first configuration, the intermediate layer comprises a layer of at least one silicon-containing material selected from silicon, a silicon-aluminum alloy, a silicon-free aluminum nitride, or a silicon-containing nitride. In this case, a silicon-containing layer is interposed between the base and the outer layer, and the material has excellent adhesion to the silicon-containing layer, such as AfLN ceramics.
A!Q20]系セラミックス、SiC系セラミックス又
はサイアロンを含めたSi3N+系セラミ。A! Q20] type ceramics, SiC type ceramics, or Si3N+ type ceramics including Sialon.
クスなどの基体に適用すると外層のすぐれた特性を発揮
することができる。When applied to a substrate such as wood, the excellent properties of the outer layer can be exhibited.
第2の構成としては、中間層がケイ素含有物層と酸化ア
ルミニウム、窒化アルミニウム、酸窒化アルミニウムの
中の少なくとも1種の第1″fF:4補助層とからなる
ものである。この場合は、基体と外層との間に第1fi
着補助層とケイ素含有物層が介在し、基体に第1g着補
助層が隣接し、外層にケイ素含有物層が隣接しているも
ので、第1密着補助層との付着性にすぐれている基体
例えばZr0p系セラミツクス、TiC系セラミックス
又は各種のセラミックスからなる基体に適用すると外層
のすぐれた特性を発揮することがで5るものである。In a second configuration, the intermediate layer consists of a silicon-containing layer and a 1″fF:4 auxiliary layer of at least one of aluminum oxide, aluminum nitride, and aluminum oxynitride. In this case, A first fi between the base and the outer layer
An adhesion auxiliary layer and a silicon-containing layer are interposed, the first g adhesion auxiliary layer is adjacent to the substrate, and the silicon-containing layer is adjacent to the outer layer, and has excellent adhesion with the first adhesion auxiliary layer. base body
For example, when applied to a substrate made of Zr0p ceramics, TiC ceramics, or various ceramics, the outer layer exhibits excellent properties.
第3の構成としては、中間層がケイ素含有物層と第1密
着補助層と周期律表4a、5a、6a族金属の炭化物、
窒化物、酸化物及びこれらの相q固溶体の中の少なくと
も1種の第2v:4補助層とからなるものである。この
場合は、基体と外層との間に:52密着補助層と第1宅
看補助層とケイ素含有物層が介在し、基体に第2密着補
助層が隣接し、外層にケイ素含有物層が隣接し、第2密
着補助層とケイ、ド含有物層との間に第1密着補助層が
介在しているもので、第2密着補助層との付着性にすぐ
れているノ^体、例えば各種の金属又はステルス、高速
度鋼などの[具鋼を含めた各種合金、焼結ハイス、8硬
合金、サーメットなどの基体に適用すると外層のすぐれ
た特性を発揮することができるものである。As a third structure, the intermediate layer is a silicon-containing material layer, a first adhesion auxiliary layer, and a carbide of a group 4a, 5a, or 6a metal of the periodic table;
a 2nd v:4 auxiliary layer of at least one of nitrides, oxides and phase q solid solutions thereof. In this case, a 52 adhesion auxiliary layer, a first nursing care auxiliary layer, and a silicon-containing layer are interposed between the base and the outer layer, the second adhesion auxiliary layer is adjacent to the base, and the silicon-containing layer is provided as the outer layer. The first adhesion auxiliary layer is adjacent to the second adhesion auxiliary layer and the silica-containing material layer, and the material has excellent adhesion to the second adhesion auxiliary layer, e.g. When applied to various metals or substrates such as stealth steel, high-speed steel, various alloys including steel, sintered high speed steel, 8 hard alloy, cermet, etc., the excellent properties of the outer layer can be exhibited.
その他の中間層の構成としては、例えば+i?i述した
第3の構成で、更に基体と第2密着補助層との間に金属
又は合金でなる層の介在したもの、又は中間層をケイ素
含有物層と第2密着補助層との組合わせにすることもで
きる。Other intermediate layer configurations include, for example, +i? In the third structure mentioned above, a layer made of metal or alloy is further interposed between the base and the second adhesion auxiliary layer, or a combination of a silicon-containing layer and a second adhesion auxiliary layer as the intermediate layer. It can also be done.
L述の如く、中間層は、1層ヌは多層からなる構成にす
ることかで5るが、外層に隣接する中間層は、立方晶窒
化ホウ素との付着性にすぐれるのと、窒化ホウ素のケ重
病窄化ホウ、村への転換作/FJが高いのと、強度及び
化学的安定性にすぐれているということからケイ素含有
物層にすることを特徴とするものである。As mentioned above, the intermediate layer can be made from one layer or multiple layers, but the intermediate layer adjacent to the outer layer has excellent adhesion with cubic boron nitride and boron nitride. It is characterized by the use of a silicon-containing layer because of its high FJ and excellent strength and chemical stability.
これらの中間層を具体的に示すと、ケイ素含有物層とし
ては、例えばSi、5i−A12合金。Specifically, these intermediate layers include, for example, Si and 5i-A12 alloy as the silicon-containing layer.
(Si、A党)N、Si:Na があり、第1′占着補
助層としては1例えばA立・0〕、A・・QN。(Si, Party A) N, Si:Na, and the 1st occupation support layer is 1, for example, A standing, 0], A...QN.
A文(N 、 O)があり、第2密着補助層としては、
例えばT i C、Z r C、Hf C、V C。There is a sentence A (N, O), and the second adhesion auxiliary layer is:
For example, T i C, Z r C, Hf C, V C.
TaC1NbC,Cr3C7、Cr7 C3。TaC1NbC, Cr3C7, Cr7C3.
MQ7 C,WC,TiN、ZrN、VN。MQ7 C, WC, TiN, ZrN, VN.
TaN、CrN、Tie、TiC2、ZrC1。TaN, CrN, Tie, TiC2, ZrC1.
Ta、+ 05 、Ti (N、C)。Ta, +05, Ti (N, C).
(Ti−Ta)C,(Ti拳W)C。(Ti-Ta)C, (Ti-Fist W)C.
Ti (N、O)、Ti (C,N、O)。Ti (N, O), Ti (C, N, O).
(Ti・Ta−W)C,などを挙げることができる。こ
れらの中間層は、化学H,を論的化合物のみでなく、非
化学品論的化合物として形成されることもあり、非化学
r11論的化合物の中でも金属光、Eに対して非金J1
元、ドの比か少なくなった亜化学埴扁重化合物として形
成されていることもある。(Ti.Ta-W)C, etc. can be mentioned. These intermediate layers may be formed not only as chemical compounds but also as non-chemical compounds, and among non-chemical compounds, metal light, non-gold J1 for E, etc.
In some cases, it is formed as a subchemical clay heavy compound, which is smaller than the former.
本発明の立方晶窒化ホウ素被覆部材は1次のような方法
によって製造することができる。まず、基体は、板状体
、塊状体、粉末状又は粉末圧粉体状として用いることが
できる。この内、板状体又は塊状体として用いる場合は
、必要に応じて基体の表面を研摩、洗浄及び乾燥などを
行なうと基体と中間層との付着性がすぐれることから好
ましいことである。The cubic boron nitride coated member of the present invention can be manufactured by the following method. First, the substrate can be used in the form of a plate, a block, a powder, or a compacted powder. When used as a plate or block, it is preferable to polish, wash, dry, etc. the surface of the substrate as necessary to improve adhesion between the substrate and the intermediate layer.
、+1(体の表面に中間層を設ける方法は、CVD法、
PVD法又はプラズマCVD法による方法。, +1 (The method of providing an intermediate layer on the surface of the body is the CVD method,
Method using PVD method or plasma CVD method.
金属を74看した後浸炭や窒化処理して金属化合物の中
間層とする方法、スプレー、刷毛塗りなどで粉末状とし
て設ける方法1 もしくは加圧成形によって粉末圧粉体
として設ける方法がある。また、)、(体と中間層との
付着性を高めるために、基体の表面に金属又は合金から
なる層を設ける必要がある場合には、蒸若、イオンブレ
ーティング又はスバ、ターのようなPVD法の他にメッ
キによっても形成することができる。There are two methods: a method of carburizing or nitriding the metal after 74 hours to form an intermediate layer of a metal compound, a method of providing it as a powder by spraying or brush coating, or a method of providing it as a compacted powder by pressure molding. ), (If it is necessary to provide a layer made of metal or alloy on the surface of the substrate in order to improve the adhesion between the body and the intermediate layer, vaporization, ion-blating, or coating such as In addition to the PVD method, it can also be formed by plating.
外層の形成方法は、PVD法又はプラズマCVD法の他
に粉末状、粉末圧粉体状もしくはCVD法、PVD法、
プラズマCVD法などによって窒化ホウ素を中間層の表
面に形成した後、立方晶窒化ホウ素の安定な高圧高温条
件によって処理して立方晶窒化ホウ素を主体とする外層
にすることができる。さらに、本発明の被覆部材の製造
方法について具体的に説明すると、第1の方法は、基体
が、例えば線引量、圧延品、鋳造品、鍛造品又は焼結晶
からなる板状体もしくは塊状体である場合、基体の表面
を研摩、洗浄及び乾燥後、CVD法、PVD法又はプラ
ズマCVD法によって中間層を設ける。次いで、高エネ
ルギーを発生し得るPVD法、プラズマCVD法又はレ
ーザ蒸着法などの反応容器内に設置して、中間層の表面
に0.05用m〜20SLm程度の薄膜状の外層を形成
する方法である。In addition to the PVD method or plasma CVD method, the outer layer can be formed in the form of powder, powder compact, CVD method, PVD method,
After boron nitride is formed on the surface of the intermediate layer by a plasma CVD method or the like, it can be treated under stable high pressure and high temperature conditions for cubic boron nitride to form an outer layer mainly composed of cubic boron nitride. Furthermore, to specifically explain the method for manufacturing the coated member of the present invention, in the first method, the base body is a plate-shaped body or a block body made of, for example, a wire drawing, a rolled product, a cast product, a forged product, or a sintered crystal. In this case, after polishing, cleaning and drying the surface of the substrate, an intermediate layer is provided by CVD, PVD or plasma CVD. Next, a method of forming a thin film-like outer layer of about 0.05 m to 20 SLm on the surface of the intermediate layer by placing it in a reaction vessel such as PVD method, plasma CVD method, or laser evaporation method that can generate high energy. It is.
第2の方法は、第1の方法で用いたと同様の基体の表面
に第1の方法と同様にして中間層を形成した後、中間層
の表面にCVD法、PVD法、プラズマCVD法又はレ
ーザ薄石法によって外層を形成するための、例えば非晶
質窒化ホウ素又は六万品窒化ホウ素からなる薄膜を形成
し1次いでベルト型又はカートル型などの高圧高l!!
装置に設置して父重病窒化ホウ素の安定な高圧高温条件
下で処理する方法である。In the second method, an intermediate layer is formed on the surface of the same substrate as used in the first method in the same manner as in the first method, and then the surface of the intermediate layer is coated with CVD, PVD, plasma CVD, or laser. To form the outer layer by the thin stone method, for example, a thin film made of amorphous boron nitride or 60,000 boron nitride is formed, and then a belt-type or kirtle-type high-pressure, high-pressure film is used. !
This is a method in which boron nitride is installed in a device and treated under stable high-pressure and high-temperature conditions.
第3のり1法は、第1の方法で用いたと同様の基体の表
面に第1の方法と同様にして中間層を形成した後1例え
ば0.05+s+s〜0.8霧■程度の厚膜状の外層を
形成する目的で、中間層の表面に外層を形成するための
粉末状又は粉末圧粉体状のものを設け、次いで高圧高温
装置に設こして嶽方晶窒化ホウ素の安定な高圧高温条件
ドで処理する方法である。このとき、厚膜状の外層にす
る場合は、窒化ホウMの他に窒化ホウ素のゲ重病窒化ホ
ウ素への転換のための触媒作用となる、例えば窒化アル
ミニウムなどを含有させておくと 層好ましいことであ
る。In the third glue method, after forming an intermediate layer in the same manner as in the first method on the surface of the same substrate as used in the first method, a thick film of about 0.05+s+s to 0.8 mist is formed. For the purpose of forming the outer layer of the epigonal boron nitride, a powder or compacted powder material for forming the outer layer is provided on the surface of the intermediate layer, and then placed in a high-pressure and high-temperature device to form a stable high-pressure and high-temperature product of the epigonal boron nitride. This method uses conditional processing. At this time, when forming a thick outer layer, it is preferable to contain, in addition to boron nitride M, a substance such as aluminum nitride, which acts as a catalyst for the conversion of boron nitride to serious boron nitride. It is.
第4の方法は、第1の方法で用いたと同様の基体の表面
に粉末状、粉末圧粉体状又は板状体でなる中間層を設け
た後、この中間層の表面に外層を形成するための粉末状
又は粉末圧粉体状のものを設け、次いで高圧高温装置に
設置してケ重病窒化ホウ素の安定な1り5圧高温条件F
で処理する方法である。The fourth method is to provide an intermediate layer made of powder, compacted powder, or plate on the surface of the same substrate as used in the first method, and then form an outer layer on the surface of this intermediate layer. A powder or compacted powder is prepared for the purpose, and then placed in a high-pressure and high-temperature device to ensure that the seriously ill boron nitride is stable under 5-pressure and high-temperature conditions.
This is a method of processing.
第5の方法は、基体、中間層及び外層を全て粉末状又は
粉末圧粉体状として設けた後、高圧高温装置に設置して
、立方晶窒化ホウ素の安定な高圧高温条件下で処理する
方法である。The fifth method is to provide the base, intermediate layer, and outer layer in the form of powder or compacted powder, and then place them in a high-pressure and high-temperature device to process cubic boron nitride under stable high-pressure and high-temperature conditions. It is.
このときの立方晶窒化ホウ素の安定な高圧高温条件rと
は、圧力4.5GPa以上、温度700℃で行なうこと
ができるが、特に圧力6.0GPa以上、温度1500
℃以りで行なうのが好ましい。The stable high-pressure and high-temperature conditions r for cubic boron nitride at this time can be carried out at a pressure of 4.5 GPa or higher and a temperature of 700°C, but in particular a pressure of 6.0 GPa or higher and a temperature of 1500°C.
It is preferable to carry out the reaction at a temperature below .degree.
(作用)
本発明の立方晶窒化ホウ素被覆部材は、外層に隣接する
中間層がケイ素含有物層であることから立方晶窒化ホウ
素からなる外層と中間層との付着性を高めていると共に
、窒化ホウ素のケ重病窒化ホウ素への転換作用を高める
ことかで5るものである。このために、本発明の被覆部
材は、高エネルギーのPVD法又はプラズマCVD法で
もって外層を形成しても立方晶窒化ホウ素の含有量が高
く、緻密で膜状の外層が形成されやすく、又立方晶窒化
ホウ素の安定な高圧高温条件でもって外層を形成しても
立方晶窒化ホウ素の含有量が高く、wI密な外層になっ
ているものである。この結果、本発明の被覆部材は、立
方晶窒化ホウ素自体の有している高硬度性、高熱伝導性
、高電気絶縁性などの諸特性を充分に発揮することがで
きるものである。(Function) In the cubic boron nitride-coated member of the present invention, since the intermediate layer adjacent to the outer layer is a silicon-containing layer, the adhesion between the outer layer made of cubic boron nitride and the intermediate layer is improved, and the nitrided The purpose of this treatment is to enhance the conversion effect of boron into serious boron nitride. For this reason, the coated member of the present invention has a high cubic boron nitride content even if the outer layer is formed using a high-energy PVD method or plasma CVD method, and a dense, film-like outer layer is likely to be formed. Even if the outer layer is formed under stable high-pressure and high-temperature conditions using cubic boron nitride, the content of cubic boron nitride is high and the outer layer is dense in wI. As a result, the coated member of the present invention can fully exhibit the various properties of cubic boron nitride itself, such as high hardness, high thermal conductivity, and high electrical insulation.
(実施例)
実施例I
S iz Na −8wt%A120z −4wt%Y
2O3組成のセラミックス焼結体で作成した形状寸法1
0φX3mmの基体の表面をダイヤモンド砥石で研摩後
、蒸留水及びエチルアルコールで洗浄及び乾燥した0次
いで、基体をCVD装置の容器内に設置し、10vo文
%5iCua =40va1%NH3−50vou%H
240vo1圧カフ0To r r 、温1f!LL
100℃、保持時間50分にて処理してノ、(体の表面
にケイ素窒化物層を形成させた0次に、容器内のカスを
真空排気した後、1Ovou%BC1= −25vo1
%H7−35voi%NH3−30vo1%Ar雰囲気
中、圧力50Torr、温度1200℃、保持時間12
0分の条件で処理してケイ素窒化物層の表iI′i′i
に窒化ホウ素の層を形成させた。このときの窒化ホウ素
の層は、X線回折により調べた所、非晶質窒化ホウ素を
1体とするものであった。これを高圧高温装置に設置し
て、圧カフ 、0GPa 、温度1600℃の条件で処
理して本発明の被覆部材を得た。(Example) Example I S iz Na -8wt%A120z -4wt%Y
Shape and dimensions 1 made of ceramic sintered body with 2O3 composition
After polishing the surface of the 0 φ x 3 mm substrate with a diamond grindstone, the substrate was washed with distilled water and ethyl alcohol, and dried.Then, the substrate was placed in a container of a CVD device, and 10vo%5iCua = 40va1%NH3-50vou%H
240vo 1 pressure cuff 0Torr, temperature 1f! LL
Processed at 100°C for 50 minutes (a silicon nitride layer was formed on the surface of the body) Next, after evacuating the residue in the container, 1 Ovou% BC1 = -25vo1
%H7-35voi%NH3-30vo1%In Ar atmosphere, pressure 50Torr, temperature 1200℃, holding time 12
The surface iI′i′i of the silicon nitride layer was treated under conditions of 0 minutes.
A layer of boron nitride was then formed. The boron nitride layer at this time was examined by X-ray diffraction and was found to be composed of amorphous boron nitride. This was placed in a high-pressure, high-temperature device and treated under conditions of a pressure cuff, 0 GPa, and a temperature of 1600° C. to obtain a coated member of the present invention.
比較用として、L述した本発明の被覆部材の製造方法か
らケイ素窒化物層の形成丁程を除き1その他の丁程を同
様に行なって比較の被覆部材を得た。For comparison, a comparative coated member was obtained by performing the same steps as described above except for the step of forming the silicon nitride layer.
こうして得た本発明の被覆部材と比較の被1′a部材の
被覆層をX線回折及び走査型゛重子顕微鏡にて調べた所
、本発明の被覆部材は、外層が厚ざ3μmの緻密な立方
晶窒化ホウ素の層で、中間層がノゾさ2pmの5i3N
a層であり、比較の被覆部材は、被覆層が厚さ3gmで
、ケカ晶窒化ホウ素の含有した六力品窒化ホウ、Vの層
であった0次に、被覆層と基体との付看性を引掻き硬さ
試験機に相当するスクラッチ試験機によって調へた所、
本発明の被覆部材は、lokg荷屯を加えたダイヤモン
ド圧Tで引掻いても被覆層が剥離しなかったのに対し、
比較の被覆部材は、6kg荷玉を加えたダイヤモンド圧
子で引掻いたところ被覆層が剥離した。When the coating layers of the thus obtained coated member of the present invention and the comparative member 1'a were examined using X-ray diffraction and a scanning doublet microscope, it was found that the coated member of the present invention had a dense outer layer with a thickness of 3 μm. A layer of cubic boron nitride, with an intermediate layer of 5i3N with a thickness of 2 pm.
A layer, and the comparative coated member had a coating layer with a thickness of 3 gm, and was a layer of hexagonal boron nitride, V containing crystalline boron nitride. The properties were determined using a scratch tester equivalent to a scratch hardness tester.
In the coated member of the present invention, the coating layer did not peel off even when scratched with a diamond pressure T with a load of 100 kg.
When the comparative coated member was scratched with a diamond indenter to which a 6 kg ball was applied, the coating layer peeled off.
実施例2
Zr07−3wt%MgO組成のセラミックス焼結体で
作成した形状寸法10φX3mmの基体の表面を実施例
1と同様に処理した後、反応容ム内に設置し、5vof
1%AC13−10vou%C0−10vau%CO7
−75vafL%H2雰囲気中、圧力30To r r
、温度1100℃、保持時間120分にて処理して基
体の表面に酸化アルミニウムの層を形成させた。次いで
、容器内のガスを真空真気した後、10vo交%SiC
文、−50vai%NN7−40vo%H2雰囲気中、
圧力50Torr、温度1200℃、保持時間30分に
て処理して酸化アルミニウム層の表面にケイ素窒化物層
を形成させ、 ilfl容度内のカスを真空排気した後
、10vou%BC1+ −’25vou%H、・35
vo、i%NH3−30voQ%Ar雰囲気中、圧力5
0Torr、温度1200℃、保持時間120分の条件
で処理してケイ素窒化物層の表面に窒化ホウ素の層を形
成させた6次に、高圧高温処理に設置して、圧力6.0
GPa 、温度1600℃の条件で処理して本発明品の
被覆部材を得た。Example 2 After treating the surface of a 10 φ x 3 mm substrate made of a ceramic sintered body with Zr07-3wt%MgO composition in the same manner as in Example 1, it was placed in a reaction chamber and 5vof
1%AC13-10vau%C0-10vau%CO7
-75vafL%H2 atmosphere, pressure 30Torr
A layer of aluminum oxide was formed on the surface of the substrate by treatment at a temperature of 1100° C. and a holding time of 120 minutes. Next, after evacuating the gas in the container, 10vo exchange% SiC
text, -50vai%NN7-40vo%H2 atmosphere,
A silicon nitride layer was formed on the surface of the aluminum oxide layer by treatment at a pressure of 50 Torr, a temperature of 1200°C, and a holding time of 30 minutes, and after evacuating the scum in the ilfl volume, 10 vou% BC1+ -'25 vou% H ,・35
vo, i%NH3-30voQ%Ar atmosphere, pressure 5
A layer of boron nitride was formed on the surface of the silicon nitride layer by processing at a temperature of 0 Torr, a temperature of 1200°C, and a holding time of 120 minutes.Next, it was placed in a high pressure and high temperature treatment, and a pressure of 6.0
GPa and a temperature of 1600° C. to obtain a coated member of the present invention.
比較用として、丘述した本発明の被覆部材の製造方法か
ら酸化アルミニウム層の形成■程及びケイ、に窒化物層
の形1jCI程を除き、)、(体の表面に直接窒化ホウ
、緒の層を形成した後同様に高圧高温処理して比較の被
覆部材を得た。For comparison, from the method for producing a coated member of the present invention described above, except for the step 1 of forming an aluminum oxide layer and the step 1 of forming a nitride layer on silicon, After forming the layer, it was similarly subjected to high pressure and high temperature treatment to obtain a comparative coated member.
こうして得た本発明の被覆部材と比較の被覆部材を実施
例1と同様にして調へた所、本発明の被覆部材は、外層
が厚さ3pmの緻密な立方晶窒化ホウ素の層で、中間層
が厚さIgmのAu203層と厚さ1牌1のSi:Nn
層からなり、比較の被覆部材は、被覆層が厚さ3μmで
、六方晶窒化ホウ素の層であった。The coated member of the present invention thus obtained and the comparative coated member were examined in the same manner as in Example 1, and it was found that the outer layer of the coated member of the present invention was a dense cubic boron nitride layer with a thickness of 3 pm, and the middle layer was a dense cubic boron nitride layer with a thickness of 3 pm. The layers are Au203 layer with a thickness of Igm and Si:Nn with a thickness of 1 tile.
The comparative coated member had a thickness of 3 μm and was a layer of hexagonal boron nitride.
実施例3
WC−5wt%CO組成の超硬合金で作成した形状す法
10X10X5+smの基体の表面を実施例1と同様に
処理した後、反応容器内に設置し、8voM%T i
Ci4−5voJ1%CHa −87va1%H2雰囲
気中、圧力20Torr、温度1000℃、保持時間3
0分にて処理してチタン炭化物層を形成させた0次いで
、容器内のガスを真空排気した後、5マ0文%AlC1
x −10voJIL%C0−10vou%CO2−7
5vofL%H2雰囲気中、圧力30To r r 、
温度1100℃、保持時間120分にて処理してチタン
炭化物層の表面に酸化アルミニウム層を形成させ、再度
容器内のガスを真空排気した後、10vai%S i
Ala −50vo1%N2−40vou%H2雰囲気
中、圧力50To r r 、温度1200℃、保持時
間30分にて処理して酸化アルミニウム層の表面にケイ
素窒化物層を形成させた。また、容器内のガスを真空排
気した後、高出力可変高周波熱プラズマ発生装置によっ
て容器内にプラズマを発生させ、
20 voJ1%B3 N3 H6−40voi%NH
:l −40マ0文%H2雰囲気中、温度1600℃で
処理してケイ素窒化物層の表面に窒化ホウ素の層を形成
させて本発明品の被覆部材を得た。Example 3 After treating the surface of a 10×10×5+sm substrate made of cemented carbide with a WC-5wt% CO composition in the same manner as in Example 1, it was placed in a reaction vessel and 8voM%Ti
Ci4-5voJ1%CHa -87va1%H2 atmosphere, pressure 20 Torr, temperature 1000°C, holding time 3
After processing for 0 min to form a titanium carbide layer, the gas in the container was evacuated, and then 5 min 0 m% AlC1
x -10voJIL%C0-10vou%CO2-7
In a 5vofL%H2 atmosphere, the pressure was 30Torr,
After processing at a temperature of 1100°C and a holding time of 120 minutes to form an aluminum oxide layer on the surface of the titanium carbide layer, and evacuating the gas in the container again, 10vai% Si
A silicon nitride layer was formed on the surface of the aluminum oxide layer by processing in an Ala-50vol%N2-40vou%H2 atmosphere at a pressure of 50 Torr, a temperature of 1200°C, and a holding time of 30 minutes. In addition, after evacuating the gas in the container, plasma is generated in the container by a high-output variable high-frequency thermal plasma generator, and 20 voJ1%B3 N3 H6-40voi%NH
:l-40mm% H2 atmosphere at a temperature of 1600 DEG C. to form a layer of boron nitride on the surface of the silicon nitride layer to obtain a coated member of the present invention.
比較用として、上述の窒化ホウ素の層を形成させる方法
によって基体の表面に直接窒化ホウ素の層を形成させて
比較の被覆部材を得た。For comparison, a comparative coated member was obtained by directly forming a boron nitride layer on the surface of the substrate using the method for forming a boron nitride layer described above.
こうして得た本発明の被覆部材と比較の被覆部材を実施
例1と同様にして調べた所、本発明の被覆部材は、外層
が厚さ2gmの立方晶窒化ホウ十を主体とする層で、中
間層が厚さIgmのTiC層と厚さlJLmのA文20
3層と厚さl終mの5ixNn層からなり、比較の被覆
部材は、所々被層層が付着している程度であった。The coated member of the present invention thus obtained and the comparative coated member were examined in the same manner as in Example 1, and it was found that the coated member of the present invention had an outer layer mainly composed of cubic nitride with a thickness of 2 gm. A pattern 20 where the intermediate layer is a TiC layer with a thickness of Igm and a thickness of lJLm
The comparative covering member was composed of three layers and a 5ixNn layer with a thickness of 1 m, and the coating layer was only adhered in some places.
実施例4
Mo板からなる基体の表面にイオンプレーテインクによ
ってSi膜を被覆した後、CVD装置に5没置して、1
0マ0文%BC立3−25マ0立%H2−35van%
NH3−30va1%Ar雰囲気中。Example 4 After coating the surface of a substrate made of a Mo plate with a Si film using ion plate ink, it was placed in a CVD apparatus for 1 hour.
0 ma 0 sentence % BC standing 3-25 ma 0 standing % H2-35 van%
In NH3-30va 1% Ar atmosphere.
圧力50To r r 、温度1300℃、保持詩間1
20分の条件で、Si層の表面に窒化ホウ素の層を形成
させた。次に、高圧高温装置に設置して、圧力6GPa
、温度1200℃の条件で処理して本発明品の被覆部
材を得た。Pressure 50Torr, temperature 1300℃, holding time 1
A boron nitride layer was formed on the surface of the Si layer under conditions of 20 minutes. Next, it is installed in a high-pressure and high-temperature device, and the pressure is 6 GPa.
A coated member of the present invention was obtained by processing at a temperature of 1200°C.
比較用として、ト述の窒化ホウ素の層を形成させる方法
によってMo板の基体の表面に直接窒化ホウ素の層を形
成させて比較の被覆部材を得た。For comparison, a comparative coated member was obtained by directly forming a boron nitride layer on the surface of a Mo plate substrate using the method for forming a boron nitride layer described above.
こうして得た本発明の被覆部材と比較の被覆部材の被覆
層を実施例1と同様にして調べた所1本発明の被覆部材
は、外層が厚さ3μmの立方晶窒化ホウ素の層で、中間
層が厚さ2ルmのSi層からなり、比較の被覆部材は、
被覆層が六方品窒化ホウ素の層であった。The thus obtained coating layers of the coated member of the present invention and the comparative coated member were examined in the same manner as in Example 1.1 The coated member of the present invention had an outer layer of cubic boron nitride with a thickness of 3 μm, and an intermediate layer of cubic boron nitride. The layer is composed of a Si layer with a thickness of 2 m, and the comparative covering member is
The covering layer was a hexagonal boron nitride layer.
(発明の効果)
を述の如く1本発明の立方晶窒化ホウ素被覆部材は、基
体と立方晶窒化ホウ素を主成分とする外層との間に中間
層を介在させることによって、被覆層の1耐剥離性が著
しくすぐれると共に緻密でt方晶窒化ホウ素からなる外
層が形成されているものである。このために、従来のケ
重病窒化ホウ素焼結体が用いられている切削工具及び耐
摩耗工具から更には形状及び用途的に制約を受けている
ような工具部材にも応用することができる。また、立方
晶窒化ホウ素からなる外層が緻密でバラツキの少ないも
のであることから立方晶窒化ホウ素の特性を利用して゛
ト導体基板をはじめ各種の電f又は電気部品関係に応用
できる産業h4T用な材料である。(Effects of the Invention) As described above, the cubic boron nitride-coated member of the present invention has an intermediate layer interposed between the substrate and the outer layer containing cubic boron nitride as a main component, thereby increasing the durability of the coating layer. It has extremely excellent releasability and has a dense outer layer made of t-gonal boron nitride. For this reason, it can be applied not only to cutting tools and wear-resistant tools in which conventional sintered boron nitride bodies are used, but also to tool members that are subject to restrictions in terms of shape and use. In addition, since the outer layer made of cubic boron nitride is dense and has little variation, the characteristics of cubic boron nitride can be used for industrial H4T applications, which can be applied to various electrical and electronic components, including conductor substrates. It is the material.
Claims (3)
層を形成してなる被覆部材において、前記基体と前記外
層との間に1層又は多層で構成される中間層を介在させ
、前記外層に隣接する該中間層がケイ素、ケイ素アルミ
ニウム合金、ケイ素アルミニウム窒化物又はケイ素窒化
物の中の少なくとも1種からなるケイ素含有物層によっ
て形成されていることを特徴とする立方晶窒化ホウ素被
覆部材。(1) In a covering member formed by forming an outer layer mainly composed of cubic boron nitride on the surface of a substrate, an intermediate layer composed of one layer or multiple layers is interposed between the substrate and the outer layer, and the A cubic boron nitride-coated member, characterized in that the intermediate layer adjacent to the outer layer is formed by a silicon-containing layer consisting of at least one of silicon, silicon-aluminum alloy, silicon-aluminum nitride, or silicon nitride. .
層と1層又は多層で構成される密着補助層からなり、前
記ケイ素含有物層に隣接する該密着補助層が酸化アルミ
ニウム、窒化アルミニウム、酸窒化アルミニウムの中の
少なくとも1種からなる第1密着補助層であることを特
徴とする特許請求の範囲第1項記載の立方晶窒化ホウ素
被覆部材。(2) The intermediate layer is composed of a silicon-containing layer adjacent to the outer layer and an adhesion auxiliary layer composed of one layer or multiple layers, and the adhesion auxiliary layer adjacent to the silicon-containing layer is aluminum oxide or aluminum nitride. 2. The cubic boron nitride coated member according to claim 1, wherein the first adhesion auxiliary layer is made of at least one of aluminum oxynitride.
する第2密着補助層が周期律表4a、5a、6a族金属
の炭化物、窒化物、酸化物及びこれらの相互固溶体から
選ばれる1種以上の成分からなることを特徴とする特許
請求の範囲第2項記載の立方晶窒化ホウ素被覆部材。(3) In the intermediate layer, the second adhesion auxiliary layer adjacent to the first adhesion auxiliary layer is one selected from carbides, nitrides, oxides, and mutual solid solutions of metals of groups 4a, 5a, and 6a of the periodic table. The cubic boron nitride-coated member according to claim 2, characterized in that the cubic boron nitride-coated member is composed of more than one type of component.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25040985A JPS62109976A (en) | 1985-11-08 | 1985-11-08 | Member covered with cubic boron nitride |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25040985A JPS62109976A (en) | 1985-11-08 | 1985-11-08 | Member covered with cubic boron nitride |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62109976A true JPS62109976A (en) | 1987-05-21 |
| JPH0558070B2 JPH0558070B2 (en) | 1993-08-25 |
Family
ID=17207462
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25040985A Granted JPS62109976A (en) | 1985-11-08 | 1985-11-08 | Member covered with cubic boron nitride |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62109976A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0225562A (en) * | 1988-07-14 | 1990-01-29 | Mitsubishi Heavy Ind Ltd | Sintered hard alloy coated with cubic boron nitride |
| JPH06262405A (en) * | 1993-03-05 | 1994-09-20 | Toshiba Tungaloy Co Ltd | Coating part for tool |
| WO2011083869A1 (en) * | 2010-01-11 | 2011-07-14 | 国立大学法人九州大学 | Cubic boron nitride coating method and material produced by the method |
| JP2012531045A (en) * | 2009-06-22 | 2012-12-06 | アプライド マテリアルズ インコーポレイテッド | Boron film interface technology |
| JP2016078137A (en) * | 2014-10-10 | 2016-05-16 | 新日鐵住金株式会社 | Cemented-carbide tool |
-
1985
- 1985-11-08 JP JP25040985A patent/JPS62109976A/en active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0225562A (en) * | 1988-07-14 | 1990-01-29 | Mitsubishi Heavy Ind Ltd | Sintered hard alloy coated with cubic boron nitride |
| JPH06262405A (en) * | 1993-03-05 | 1994-09-20 | Toshiba Tungaloy Co Ltd | Coating part for tool |
| JP2012531045A (en) * | 2009-06-22 | 2012-12-06 | アプライド マテリアルズ インコーポレイテッド | Boron film interface technology |
| WO2011083869A1 (en) * | 2010-01-11 | 2011-07-14 | 国立大学法人九州大学 | Cubic boron nitride coating method and material produced by the method |
| JP5669107B2 (en) * | 2010-01-11 | 2015-02-12 | 国立大学法人九州大学 | Cubic boron nitride coating method and material obtained thereby |
| JP2016078137A (en) * | 2014-10-10 | 2016-05-16 | 新日鐵住金株式会社 | Cemented-carbide tool |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0558070B2 (en) | 1993-08-25 |
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