JPS6216533A - Resin sealing method for semiconductor - Google Patents
Resin sealing method for semiconductorInfo
- Publication number
- JPS6216533A JPS6216533A JP60156578A JP15657885A JPS6216533A JP S6216533 A JPS6216533 A JP S6216533A JP 60156578 A JP60156578 A JP 60156578A JP 15657885 A JP15657885 A JP 15657885A JP S6216533 A JPS6216533 A JP S6216533A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- temperature
- hardening
- cavity
- heated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Moulds For Moulding Plastics Or The Like (AREA)
- Injection Moulding Of Plastics Or The Like (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、半導体の樹脂封止方法の改良に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to an improvement in a resin encapsulation method for semiconductors.
この種の従来装置としては、第3FI!Jないし第4図
に示すものがあった。図中、+llは止金型、+21
Fi下金型、(31はランナー、(4)はキャビティ、
(5)は上金型(11と下金型(21とに夫々allさ
れたヒータ、(6)はヒータ(5)への通電量と通電時
間を制御する制御手段である。As a conventional device of this type, the 3rd FI! There were those shown in Figures J to 4. In the figure, +ll is a stopper type, +21
Fi lower mold, (31 is runner, (4) is cavity,
(5) is a heater that is respectively connected to the upper mold (11) and the lower mold (21), and (6) is a control means for controlling the amount and time of energization to the heater (5).
上記のように構成されたものにおいては、制御手段Te
lにより、ヒータ(5)は予め設定された通電量と通電
時間にセットされており、上金型(1)と下金型(2)
は、夫々樹脂の硬化温度、例えば180@で加熱され、
その温度に保持されている。ここで、まず、樹脂がポッ
ト(図示せず、以下同様)から注入されると、その樹脂
はランナー(3)ヲ介し、キャビティ(4)内に注入さ
れる。その後、その樹脂が硬化され、封止作業を終了す
ることになる。In the configuration as described above, the control means Te
1, the heater (5) is set to a preset energization amount and energization time, and the upper mold (1) and lower mold (2)
are heated at the curing temperature of the resin, for example 180@, respectively,
maintained at that temperature. Here, first, when resin is injected from a pot (not shown, the same applies hereinafter), the resin is injected into the cavity (4) via the runner (3). Thereafter, the resin is cured and the sealing work is completed.
ところで、ポットに位置した樹脂げ第5図中実線に示す
ように急激に低粘度となりながら、ランナー(3)から
キャビティ(4)内へ移動する。11時間に達すると、
樹脂は硬化工程に入るため、その後げ粘度が急激に高く
なる。このようにして、半導体(図示せず)が封止され
る。By the way, as shown by the solid line in FIG. 5, the resin located in the pot moves from the runner (3) into the cavity (4) while rapidly decreasing in viscosity. When it reaches 11 hours,
As the resin enters the curing process, its viscosity increases rapidly. In this way, a semiconductor (not shown) is encapsulated.
ところが、樹脂はポットからランナー(31ヲ介し長い
経路を経てキャピテイ(4)に達するばかりでなく、樹
脂の硬化温度で両金型が加熱されているため、12時点
のようにキャビティ(4)に樹脂が到達した時には、す
でに樹脂I/′it1時点を過ぎて硬化工程に入ってお
り、粘度がA2に上昇することになるにの結果、キャピ
テイ(4)内の空気の逃げが不充分となり、キャビティ
(41内に空気が残留し、樹脂中に多数のボイドが発生
するという問題点が生ずることになる。このため、この
対策としては、キャビティ(4)内に樹脂が到達した時
点t2での樹脂の粘度を低粘度とするために、両金型(
1)、(2jの加熱温度ヲ180°Cから150℃にさ
げることが考えられる。However, not only does the resin reach the cavity (4) through a long path from the pot via the runner (31), but also because both molds are heated at the curing temperature of the resin, the resin does not reach the cavity (4) as at point 12. By the time the resin reaches the resin, it has already passed the resin I/'it1 point and has entered the curing process, and the viscosity increases to A2, resulting in insufficient air escape within the cavity (4). This results in the problem that air remains in the cavity (41) and a large number of voids are generated in the resin. Therefore, as a countermeasure for this problem, it is necessary to In order to reduce the viscosity of the resin, both molds (
1), (It is possible to lower the heating temperature in 2j from 180°C to 150°C.
ところが、この場合には、12時点での温度iA2から
A1にさげることは可能となるが、樹脂の硬化温度より
も低い温度であるため、硬化時間に要時間を要し、量竜
性に劣るという問題があった。However, in this case, although it is possible to lower the temperature from iA2 at point 12 to A1, since the temperature is lower than the curing temperature of the resin, it takes a long time for curing time, and the quality is poor. There was a problem.
この発明けかかる問題点を解決するためになされたもの
で、注入時には低粘度に維持できると共に、硬化時間の
増加も防止でき、樹脂のボイドを確実に防止できる半導
体の樹脂封止方法を提供するものである。This invention was made in order to solve the above problems, and provides a resin encapsulation method for semiconductors that can maintain low viscosity during injection, prevent increase in curing time, and reliably prevent voids in the resin. It is something.
この発明に係る半導体の樹脂封止方法は、ランナーを介
して樹脂をキャビティ内に注入する工程時に、予め定め
らネタ樹脂の硬化温度よりも低い温度で金型を加熱し、
次に、樹脂の硬化工程時には、上記予め定められた硬化
温度で上記金型を加熱するようにしたものである。The semiconductor resin encapsulation method according to the present invention includes heating a mold at a temperature lower than a predetermined curing temperature of the base resin during the step of injecting the resin into the cavity through the runner;
Next, during the resin curing step, the mold is heated at the predetermined curing temperature.
この発明における半導体の樹脂封止方法け、金型が予め
定められた樹脂の硬化温度よりも低い温度で加熱さねて
いる段階で樹脂がキャビティに注入され、キャビティ内
の空気を充分に除去した後に、樹脂の上記硬化温度で金
型が加熱さね、樹脂は短時間で硬化される。In the semiconductor resin encapsulation method in this invention, the resin is injected into the cavity while the mold is being heated at a temperature lower than the predetermined curing temperature of the resin, and the air inside the cavity is sufficiently removed. Afterwards, the mold is heated to the above curing temperature of the resin, and the resin is cured in a short time.
以下、この発明の一実捲例″ff:ll!1図で説明す
る。Hereinafter, a practical example of this invention will be explained with reference to FIG.
図中、(lO)けヒータ(5)への通電量を切換える時
点を設定する切換時点設定手段、aiIfi切換時点設
定手段叫からの切換指令により、ヒータ(5)への通電
量を変更し、金型の温度を第2図中実線時点のように、
150℃から180℃(予め定められた樹脂の硬化温度
)に設定する制御手段である。In the figure, the amount of energization to the heater (5) is changed by a switching command from a switching time setting means, aiIfi switching time setting means, which sets the time to switch the amount of energization to the heater (5). The temperature of the mold is set as indicated by the solid line in Figure 2.
This is a control means that sets the resin curing temperature from 150°C to 180°C (predetermined resin curing temperature).
上記のように構成さf′L7:ものにおいては、まず、
制御手段−によってヒータt5H−j、両金型ill
、 [2)の温度を150℃にすべく通電されている。In the structure f'L7: as described above, first,
Control means - heater T5H-J, both molds ill
, [2) is energized to bring the temperature to 150°C.
ここで、ポット内の樹脂は第2図中点線で示すように、
急激に低粘度となり、ランナー(3)ヲ介してキャビテ
ィ(41内へと注入さhる。12時点で樹脂はキャビテ
ィ(4)内に到達するが、この時点では、樹脂がAsの
ように低粘度状態であるため、キャビティ(4)内の空
気は確実番こ除去されることになる。ここで、切換時点
設定手段(lO)が作動し、設定温度を変更するための
指令を制御手段−へ出力するので、制御手段霞け、ヒー
タ(5)への通電量を増加し、両金型(11゜(21の
温度が180℃になるように制御する。このため樹脂は
この予め定められた硬化温度180℃で短時間で硬化さ
れる。つまり、12時点においては、樹脂は第2図中実
線と平行に一点鎖線で示す硬化曲線で硬化が促進される
。Here, the resin in the pot is as shown by the dotted line in Figure 2.
The viscosity suddenly decreases, and the resin is injected into the cavity (41) through the runner (3). At time 12, the resin reaches the cavity (4), but at this point, the resin has a low viscosity like As. Since it is in a viscous state, the air in the cavity (4) will be reliably removed.Here, the switching point setting means (lO) is activated and a command for changing the set temperature is sent to the control means. Therefore, the control means increases the amount of current applied to the heater (5) and controls the temperature of both molds (11° (21) to 180°C. Therefore, the resin The resin is cured in a short time at a curing temperature of 180° C. That is, at time point 12, the resin is cured according to a curing curve shown by a dashed dotted line parallel to the solid line in FIG.
以上のようにこの発明け、ランナーを介して樹脂をキャ
ビティ内に注入する工程時には、予め定められた樹脂の
硬化温度よりも低い温度で金型を加熱するようにし、ツ
1脂の硬化工程時には、上記予め定めらhた硬化温度で
上記金型を加熱するようにしy、=ので、硬化時間を悪
化させることなく、キャビティ内に樹脂を低温度の状態
で注入でき、樹脂中のボイドを確実に防止できる効果が
ある。As described above, in the process of injecting the resin into the cavity through the runner, the mold is heated at a temperature lower than the predetermined curing temperature of the resin, and in the process of curing the resin. Since the mold is heated to the predetermined curing temperature, the resin can be injected into the cavity at a low temperature without worsening the curing time, and voids in the resin can be reliably eliminated. It has the effect of preventing
第1図けこの発明の一実施例を示す制御ブロック図、第
2図はその温度と粘質との特性?示す特性図、嘉3図は
従来装置の断面図、第4図はその制御ブロック図、第5
図はその特性図である。
図中、Tllけ上金型、(2)は下金型、(3)汀ラン
ナー、(4)けキャピテイ、(61けヒータ、(lO)
は切換時点設定手段、Iは制御手段である。
なお、各図中、同一符号は同−又は相当部分を示す。Figure 1 is a control block diagram showing one embodiment of this invention, and Figure 2 is its temperature and viscosity characteristics. Figure 3 is a sectional view of the conventional device, Figure 4 is its control block diagram, and Figure 5 is the characteristic diagram shown.
The figure shows its characteristic diagram. In the figure, Tll is the upper mold, (2) is the lower mold, (3) the bottom runner, (4) is the capity, (61 is the heater, (1O)
is a switching point setting means, and I is a control means. In each figure, the same reference numerals indicate the same or corresponding parts.
Claims (1)
時には、予め定められた樹脂の硬化温度よりも低い温度
で金型を加熱するようにし、樹脂の硬化工程時には、上
記予め定められた硬化温度で上記金型を加熱するように
した半導体の樹脂封止方法。During the process of injecting the resin into the cavity through the runner, the mold is heated at a temperature lower than the predetermined curing temperature of the resin, and during the resin curing process, the mold is heated at the predetermined curing temperature. A resin encapsulation method for semiconductors that heats the mold.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60156578A JPS6216533A (en) | 1985-07-15 | 1985-07-15 | Resin sealing method for semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60156578A JPS6216533A (en) | 1985-07-15 | 1985-07-15 | Resin sealing method for semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6216533A true JPS6216533A (en) | 1987-01-24 |
Family
ID=15630824
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60156578A Pending JPS6216533A (en) | 1985-07-15 | 1985-07-15 | Resin sealing method for semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6216533A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5368805A (en) * | 1992-03-24 | 1994-11-29 | Fuji Electric Co., Ltd. | Method for producing resin sealed type semiconductor device |
| JP2010254257A (en) * | 2009-04-28 | 2010-11-11 | Honda Access Corp | Vehicular illumination device |
| JP2011049442A (en) * | 2009-08-28 | 2011-03-10 | Asahi Kasei Electronics Co Ltd | Semiconductor device and method for manufacturing the same |
| WO2022239224A1 (en) * | 2021-05-14 | 2022-11-17 | 東洋紡株式会社 | Method for producing solid object |
-
1985
- 1985-07-15 JP JP60156578A patent/JPS6216533A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5368805A (en) * | 1992-03-24 | 1994-11-29 | Fuji Electric Co., Ltd. | Method for producing resin sealed type semiconductor device |
| JP2010254257A (en) * | 2009-04-28 | 2010-11-11 | Honda Access Corp | Vehicular illumination device |
| JP2011049442A (en) * | 2009-08-28 | 2011-03-10 | Asahi Kasei Electronics Co Ltd | Semiconductor device and method for manufacturing the same |
| WO2022239224A1 (en) * | 2021-05-14 | 2022-11-17 | 東洋紡株式会社 | Method for producing solid object |
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