JPS6219063B2 - - Google Patents

Info

Publication number
JPS6219063B2
JPS6219063B2 JP57141452A JP14145282A JPS6219063B2 JP S6219063 B2 JPS6219063 B2 JP S6219063B2 JP 57141452 A JP57141452 A JP 57141452A JP 14145282 A JP14145282 A JP 14145282A JP S6219063 B2 JPS6219063 B2 JP S6219063B2
Authority
JP
Japan
Prior art keywords
sealing resin
outer container
gel
chamber
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57141452A
Other languages
Japanese (ja)
Other versions
JPS5931044A (en
Inventor
Takayuki Kitamura
Shinobu Takahama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57141452A priority Critical patent/JPS5931044A/en
Publication of JPS5931044A publication Critical patent/JPS5931044A/en
Publication of JPS6219063B2 publication Critical patent/JPS6219063B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/40Fillings or auxiliary members in containers, e.g. centering rings
    • H10W76/42Fillings
    • H10W76/47Solid or gel fillings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • H10W72/07541Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07551Controlling the environment, e.g. atmosphere composition or temperature characterised by changes in properties of the bond wires during the connecting
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Description

【発明の詳細な説明】 この発明は、放熱板上方の半導体素子部を外装
容器で囲い、内部に樹脂を充てんして封止した半
導体装置に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device in which a semiconductor element portion above a heat sink is surrounded by an outer container, and the inside is filled with resin and sealed.

近年、電子機器の小形軽量化が急速に進んでお
り、これらの基をなすものは、半導体装置の小形
化によるものである。なかでも、中容量の電力用
半導体装置として、以前はサイリスタが使用され
てきたが、トランジスタの大電流容量化が進んで
おり、周辺回路の簡略化、また、スイツチングタ
イムが短いなどの特長から、サイリスタに対し置
換わるようになつてきた。さらに、パワー素子を
複数個組合わせて単一パツケージにした、いわゆ
るパワーモジユールの分野においても、トランジ
スタの進出が活発になつている。
In recent years, electronic devices have rapidly become smaller and lighter, and the basis for this is the miniaturization of semiconductor devices. Among these, thyristors were previously used as medium-capacity power semiconductor devices, but transistors are becoming larger in current capacity, and they are becoming more popular due to their advantages such as simplification of peripheral circuits and short switching times. It has come to replace thyristors. Furthermore, transistors are increasingly being used in the field of so-called power modules, in which a plurality of power elements are combined into a single package.

このようなパワーモジユールの特長は、軽量化
と低価格であるが、このためには、樹脂封止形と
なる。パワーモジユールでは、複数個の半導体チ
ツプを組込んでおり、半導体チツプ自体も大電流
容量化に伴ない大きくなるため、外形寸法は従来
の樹脂封止形半導体装置に比べかなり大きなもの
となる。例えば、電動機のインバータ制御用に最
近開発されたものでは、パツケージ内に13個のチ
ツプを組込み、外形寸法が長さ100mm、幅100mm、
高さ30mmになるものが実用化されている。このよ
うなことから、パワーモジユールの樹脂封止に
は、従前のものとは異なつた構造が必要となつて
くる。なかでも、最も問題となるのは、外形が大
きくなることにより、容器内に充てんされる樹脂
の体積が大きくなり、半導体チツプの発熱による
温度上昇で、封止樹脂の膨張や温度低下時におけ
る収縮によるひずみがチツプやアルミ線に加わ
り、チツプの割れやアルミ線の断線の原因となる
ことである。
The features of such a power module are its light weight and low price, and for this purpose, it is of a resin-sealed type. A power module incorporates a plurality of semiconductor chips, and the semiconductor chips themselves become larger as the current capacity increases, so the external dimensions are considerably larger than conventional resin-sealed semiconductor devices. For example, a recently developed device for inverter control of electric motors has 13 chips built into the package, and its external dimensions are 100 mm long, 100 mm wide, and 100 mm wide.
A model with a height of 30 mm has been put into practical use. For this reason, resin sealing of the power module requires a structure different from the conventional one. Among these, the biggest problem is that as the external size increases, the volume of the resin filled in the container increases, and the temperature rise due to heat generation of the semiconductor chip causes the sealing resin to expand and contract when the temperature drops. The resulting strain is applied to the chip and aluminum wire, causing chip cracking and aluminum wire breakage.

これを防止するため、最近は、内部を下層のゲ
ル状の軟質樹脂で封止してチツプやアルミ線部を
囲い、この上層を充てん後硬化された強度の高い
封止樹脂で封止し、引出された外部端子の保持や
モジユールの機械的保護をする、2重の樹脂封止
構造のものが増えてきた。
In order to prevent this, recently, the interior is sealed with a lower layer of gel-like soft resin to surround the chip and aluminum wire parts, and after this upper layer is filled, it is sealed with a hardened high-strength sealing resin. Increasingly, devices have a double resin-sealed structure that holds the external terminals pulled out and mechanically protects the module.

この種の従来の半導体装置は、第1図に断面図
で示すようになつていた。図は2組の素子を1パ
ツケージ内に組込んだ例を示す。1は放熱板で、
上面に1対の絶縁基板2を固着している。これら
の絶縁基板2上にはそれぞれコレクタ電極3、エ
ミツタ電極4又は5、及びベース電極6が接着さ
れている。これらの電極のうち、一方のコレクタ
電極3から共通極の外部端子3aと、他方のコレ
クタ電極3からコレクタ極の外部端子3cが、そ
れぞれはんだ付け接合されて上方に引出されてい
る。また、一方のエミツタ電極4から折曲げられ
てエミツタ極の外部端子4aが上方に引出されて
いる。双方のコレクタ電極3上にそれぞれトラン
ジスタチツプ7が接着されており、これらのチツ
プ7上面の各電極パツドとそれぞれ対応するエミ
ツタ電極4,5、ベース電極6とを、アルミ線8
でワイヤボンドしている。9は2組の素子を接続
するための接続片で、一方のコレクタ電極3と他
方のエミツタ電極5とをまたがつて接合してい
る。10は上方に引出された複数の信号端子で、
それぞれ対応する電極から各接続線11により接
続されている。12は合成樹脂成形品など絶縁材
からなり、放熱板1上に周縁に沿つて接着され各
電極部やチツプ部を囲う外装容器で、上部が開口
している。13は外装容器14内に中間高さまで
充てんされた下層のゲル状の封止樹脂(例えばシ
リコンゲル)、14はこのゲル状封止樹脂13の
上部に充てんして硬化されモールドされた上層の
封止樹脂(例えばエポキシ樹脂)で、内部を封止
するとともに、外部端子3a,3c,4a及び各
信号端子10を機械的に保持している。15は合
成樹脂成形品など絶縁材からなり、外装容器12
の上部はめられたふたで、各外部端子3a,3
c,4aが上方に引出され上端部が水平に折曲げ
られており、各信号端子10が上方に引出されて
いる。
A conventional semiconductor device of this type has a sectional view shown in FIG. The figure shows an example in which two sets of elements are incorporated into one package. 1 is a heat sink,
A pair of insulating substrates 2 are fixed to the upper surface. A collector electrode 3, an emitter electrode 4 or 5, and a base electrode 6 are bonded onto these insulating substrates 2, respectively. Among these electrodes, a common-pole external terminal 3a from one collector electrode 3 and a collector-pole external terminal 3c from the other collector electrode 3 are each connected by soldering and drawn upward. Furthermore, an external terminal 4a of the emitter electrode is bent upward from one emitter electrode 4. Transistor chips 7 are bonded on both collector electrodes 3, and aluminum wires 8
It is wire bonded. Reference numeral 9 denotes a connecting piece for connecting two sets of elements, and is joined across the collector electrode 3 on one side and the emitter electrode 5 on the other side. 10 is a plurality of signal terminals pulled out upward;
The electrodes are connected by respective connection lines 11 from corresponding electrodes. Reference numeral 12 denotes an outer container made of an insulating material such as a synthetic resin molded product, which is adhered to the heat sink 1 along its periphery and surrounds each electrode section and chip section, and is open at the top. Reference numeral 13 denotes a lower gel-like sealing resin (for example, silicone gel) filled in the outer container 14 to an intermediate height, and 14 an upper-layer sealant filled in the upper part of the gel-like sealing resin 13, hardened, and molded. The inside is sealed with a sealing resin (for example, epoxy resin), and the external terminals 3a, 3c, 4a and each signal terminal 10 are mechanically held. 15 is made of an insulating material such as a synthetic resin molded product, and the outer container 12
With the lid fitted on the top of the
c, 4a are pulled out upward and their upper ends are bent horizontally, and each signal terminal 10 is pulled out upward.

上記従来の装置では、各チツプ7部やアルミ線
8部を保護するため充てんしたゲル状封止樹脂で
囲い、その上に充てんし硬化された封止樹脂で封
止した、2種の樹脂封止構造になつている。この
ため、装置の温度が上昇すると、下層のゲル状封
止樹脂13が膨張し、第2図に示すように、硬化
封止樹脂14を矢印P方向に押上げる力が作用す
る。特にゲル状封止樹脂13は線膨張係数が4〜
7×10-4で、通常のモールド硬化封止樹脂の
(10-5のオーダ)に比べて大きいため、かなり大
きな力が作用することになる。これにより、硬化
封止樹脂14で固定されてある外部端子3a,3
c,4aは引上げ力を直接受ける。このため、例
えばヒートサイクルのような使用条件下では、外
部端子の下端のはんだ付部16に周期的に引張力
が反復印加され、繰返し疲労となり、やがて断線
状態に至る事故となる。例えば、第2図で示すは
んだ付部16の断面積が3mm2で−40℃〜+125℃
を1サイクルとするヒートサイクルを加えると、
50サイクルで上記のような断線事故が発生する。
In the conventional device described above, two types of resin sealing are used: each chip 7 part and aluminum wire 8 part are surrounded by a gel-like sealing resin filled to protect them, and then sealed with a sealing resin filled and cured. It has a stop structure. Therefore, when the temperature of the device rises, the gel-like sealing resin 13 in the lower layer expands, and a force acts to push up the cured sealing resin 14 in the direction of arrow P, as shown in FIG. In particular, the gel-like sealing resin 13 has a linear expansion coefficient of 4 to
Since it is 7×10 -4 , which is larger than that of ordinary mold-cured sealing resin (on the order of 10 -5 ), a considerably large force will act on it. As a result, the external terminals 3a, 3 fixed with the hardened sealing resin 14
c and 4a directly receive the pulling force. Therefore, under usage conditions such as a heat cycle, a tensile force is periodically and repeatedly applied to the soldered portion 16 at the lower end of the external terminal, causing repeated fatigue and eventually leading to a disconnection state. For example, if the cross-sectional area of the soldering part 16 shown in Fig. 2 is 3 mm 2 , -40°C to +125°C.
If we add a heat cycle where one cycle is
A disconnection accident like the one above occurs after 50 cycles.

このように、従来の半導体装置は、チツプやア
ルミ線保護のため、下層のゲル状封止樹脂13と
上層の硬質の封止樹脂14との2重封止している
が、温度上昇により外部端子のはんだ付部が繰返
し引張応力を生じ、疲労破損に至り、信頼性が低
かつた。
In this way, conventional semiconductor devices are double-sealed with a lower layer gel-like sealing resin 13 and an upper layer hard sealing resin 14 to protect chips and aluminum wires, but due to temperature rise, external The soldered portion of the terminal repeatedly generated tensile stress, resulting in fatigue failure and low reliability.

この発明は、外装容器の一部に下層のゲル状封
止樹脂に下方で通じ、熱膨張分を逃がす逃がし室
を設け、温度上昇によりゲル状封止樹脂が膨張し
ても逃がし室に逃がされ、上層の硬化封止樹脂に
押上げ力が作用しないようにし、外部端子の断線
事故をなくし、信頼性の高い半導体装置を提供す
ることを目的としている。
This invention provides a relief chamber in a part of the outer container that communicates downward with the gel-like sealing resin in the lower layer to release thermal expansion, so that even if the gel-like sealant expands due to temperature rise, it will not escape to the relief chamber. The purpose of the present invention is to provide a highly reliable semiconductor device by preventing push-up force from acting on the upper layer of cured sealing resin, eliminating disconnection accidents of external terminals, and providing a highly reliable semiconductor device.

第3図はこの発明の一実施例による半導体装置
の断面図であり、1〜11,13,14,3a,
3c,4aは上記従来装置と同一のものである。
21は合成樹脂成形品など絶縁材からなる外装容
器で、放熱板1の上部に周縁に沿つて接着され内
部の各部品を囲い上部は開口しており、一方の側
内に下方及び上部が開口する逃がし室21aが形
成されている。この外装容器21の逃がし室部
を、第4図に斜視図で示す。22は合成樹脂成形
品など絶縁材からなり、外装容器21の上部には
められたふたで、各外部端子3a,3c,4aが
引出され上端部が水平に折曲げられており、各信
号端子10が上方に引出されている。また、ふた
22には逃がし室21aに連通し外気に通じる通
気穴22aが設けられてある。逃がし室21a内
には上層の封止樹脂14は充てんしない。
FIG. 3 is a cross-sectional view of a semiconductor device according to an embodiment of the present invention.
3c and 4a are the same as those of the conventional device described above.
Reference numeral 21 denotes an outer container made of an insulating material such as a synthetic resin molded product, which is adhered to the upper part of the heat sink 1 along the periphery, encloses each internal component, and is open at the upper part, and has an open lower and upper part in one side. A relief chamber 21a is formed. The relief chamber of this outer container 21 is shown in a perspective view in FIG. A lid 22 is made of an insulating material such as a synthetic resin molded product, and is fitted onto the top of the outer container 21. Each external terminal 3a, 3c, 4a is pulled out and the upper end is bent horizontally. is pulled upwards. Further, the lid 22 is provided with a ventilation hole 22a that communicates with the escape chamber 21a and communicates with the outside air. The upper layer sealing resin 14 is not filled in the escape chamber 21a.

上記一実施例の装置において、外装容器21内
に充てんされた下層のゲル状封止樹脂13が、温
度上昇により熱膨張しても、その膨張分の体積
は、外装容器12の逃がし室21a内に下方から
入つて収容されて逃がされる。このため、上層の
硬化封止樹脂14に作用する押上げ力は極くわず
かとなり、外部端子の断線事故がなくされる。
In the apparatus of the above embodiment, even if the lower layer gel-like sealing resin 13 filled in the outer container 21 expands thermally due to a rise in temperature, the volume of the expansion is within the escape chamber 21a of the outer container 12. entered from below, was taken into custody, and then released. Therefore, the push-up force acting on the upper hardened sealing resin 14 becomes extremely small, and accidents of disconnection of external terminals are eliminated.

なお、上記実施例では、半導体装置として、ト
ランジスタチツプ7を使用したパワーモジユール
の場合について説明したが、これに限らず、外装
容器内に下層のゲル状封止樹脂と上層の硬化封止
樹脂とで2重封止するようにした、他の種の半導
体装置にも適用できるものである。
In the above embodiment, a power module using a transistor chip 7 was explained as a semiconductor device, but the present invention is not limited to this. This can also be applied to other types of semiconductor devices that are double-sealed.

以上のように、この発明によれば、外装容器内
に、下方が開口し下層のゲル状封止樹脂に通じ上
部が開口した逃がし室を設け、外装容器の上部に
はめたふたに、上記逃がし室に通じ外気に通じる
通気穴を設けたので、温度上昇によりゲル状封止
樹脂が熱膨張しても逃がし室に逃がされ、上層の
硬化封止樹脂への押上げ力が極くわずかとなり、
外部端子の断線事故が防止され、信頼性が向上さ
れる。
As described above, according to the present invention, an escape chamber that is open at the bottom and open at the top that communicates with the gel-like sealing resin in the lower layer is provided in the outer container, and the escape chamber is provided in the lid fitted on the top of the outer container. Since we have provided a ventilation hole that connects to the chamber and communicates with the outside air, even if the gel-like sealing resin expands due to temperature rise, it will escape into the relief chamber, and the pushing force on the upper layer of cured sealing resin will be extremely small. ,
Disconnection accidents of external terminals are prevented and reliability is improved.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の半導体装置の断面図、第2図は
第1図の電極部と外部端子部の一部を示す拡大断
面図、第3図はこの発明の一実施例による半導体
装置の断面図、第4図は第3図の外装容器の逃が
し室部の拡大斜視図である。 図において、1……放熱板、2……絶縁基板、
3……コレクタ電極、4,5……エミツタ電極、
3a,3c,4a……外部電極、6……ベース電
極、7……トランジスタチツプ、13……下層の
ゲル状封止樹脂、14……上層の硬化封止樹脂、
21……外装容器、21a……逃がし室、22…
…ふた、22a……通気穴。なお、図中同一符号
は同一又は相当部分を示す。
FIG. 1 is a sectional view of a conventional semiconductor device, FIG. 2 is an enlarged sectional view showing part of the electrode section and external terminal section of FIG. 1, and FIG. 3 is a sectional view of a semiconductor device according to an embodiment of the present invention. 4 is an enlarged perspective view of the relief chamber of the outer container shown in FIG. 3. In the figure, 1... heat sink, 2... insulating substrate,
3... Collector electrode, 4, 5... Emitter electrode,
3a, 3c, 4a...external electrode, 6...base electrode, 7...transistor chip, 13...lower layer gel-like sealing resin, 14...upper layer hardened sealing resin,
21...Outer container, 21a...Escape chamber, 22...
...Lid, 22a...Vent hole. Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (1)

【特許請求の範囲】[Claims] 1 放熱板上に固着された絶縁基板、この絶縁基
板上に配置され固着された複数種の電極、これら
の電極のうち所定の電極上に装着された半導体チ
ツプ、上記各電極のうち所定の電極から上方に引
出された複数の外部端子、絶縁材からなり上部と
底部が開口しており、内側には、開口した下方が
底部からすき間があけられ上部が開口した逃がし
室が形成されてあり、上記放熱板上に周縁部に沿
つて固着された外装容器、この外装容器内に充て
んされており、熱膨張による体積増加分が下方か
ら上記逃がし室に入つて逃がされる下層のゲル状
封止樹脂、上記外装容器内に逃がし室を除き上記
ゲル状封止樹脂上に充てんされ硬化された上層の
硬化封止樹脂、及び絶縁材からなり上記外装容器
の上部にはめられ、上記各外部端子を上方に引出
しており、上記逃がし室から外部に通じる通気穴
が設けられたふたを備えた半導体装置。
1. An insulating substrate fixed on a heat sink, a plurality of types of electrodes arranged and fixed on this insulating substrate, a semiconductor chip mounted on a predetermined electrode among these electrodes, and a predetermined electrode among the above-mentioned electrodes. It is made of a plurality of external terminals pulled upward from the insulating material and has an open top and a bottom, and an escape chamber is formed inside with a gap from the bottom and an open top. An outer container fixed along the periphery on the heat dissipation plate, and a lower layer gel-like sealing resin filled in the outer container, whose volume increase due to thermal expansion enters the escape chamber from below and escapes. , an upper layer of cured sealing resin filled and cured on the gel-like sealing resin except for the escape chamber in the outer container, and an insulating material, which is fitted into the upper part of the outer container, and each of the external terminals is connected upwardly. A semiconductor device, the semiconductor device having a lid that is pulled out from the top and has a ventilation hole that communicates from the relief chamber to the outside.
JP57141452A 1982-08-12 1982-08-12 Semiconductor device Granted JPS5931044A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57141452A JPS5931044A (en) 1982-08-12 1982-08-12 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57141452A JPS5931044A (en) 1982-08-12 1982-08-12 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5931044A JPS5931044A (en) 1984-02-18
JPS6219063B2 true JPS6219063B2 (en) 1987-04-25

Family

ID=15292236

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57141452A Granted JPS5931044A (en) 1982-08-12 1982-08-12 Semiconductor device

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DE3621994A1 (en) * 1986-07-01 1988-01-14 Bbc Brown Boveri & Cie PERFORMANCE SEMICONDUCTOR MODULE
JPH01144635A (en) * 1987-11-30 1989-06-06 Mitsubishi Electric Corp Method of fixing electronic component
US5956231A (en) * 1994-10-07 1999-09-21 Hitachi, Ltd. Semiconductor device having power semiconductor elements
JP2021052094A (en) * 2019-09-25 2021-04-01 株式会社ミツバ driver

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