JPS62194687A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS62194687A JPS62194687A JP61037792A JP3779286A JPS62194687A JP S62194687 A JPS62194687 A JP S62194687A JP 61037792 A JP61037792 A JP 61037792A JP 3779286 A JP3779286 A JP 3779286A JP S62194687 A JPS62194687 A JP S62194687A
- Authority
- JP
- Japan
- Prior art keywords
- infrared
- ray
- epoxy resin
- light
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
- H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
Landscapes
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は発光素子と受光素子とを透光性樹脂で一体化し
た半導体装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device in which a light-emitting element and a light-receiving element are integrated using a light-transmitting resin.
第２図は従来の半導体装置を示すＵ「面図である。 FIG. 2 is a U-side view showing a conventional semiconductor device.
同図において１は発光素子側のフレーム、２は銀ペース
ト、３はＧａＡｓ、ＧａＰ、Ｇａ５ｅＡｓ等の赤外発光
ダイオードである。４は受光素子側のフレーム、５はホ
トトランジスタ、ホトサイリスタ等の受光素子である。In the figure, 1 is a frame on the light emitting element side, 2 is a silver paste, and 3 is an infrared light emitting diode made of GaAs, GaP, Ga5eAs, etc. 4 is a frame on the side of the light receiving element, and 5 is a light receiving element such as a phototransistor or a photothyristor.
６は赤外発光ダイオード３及び受光素子５を搭載したフ
レーム１，４を封止し几赤外透過エポキシ樹脂である。Reference numeral 6 denotes an infrared transparent epoxy resin for sealing the frames 1 and 4 on which the infrared light emitting diode 3 and the light receiving element 5 are mounted.
次に、動作について説明する。赤外発光ダイオード３に
電流を流すと、赤外発光ダイオード３工り約９００ｎｍ
程度の赤外光が発生する。この赤外光が白色の赤外透過
エポキシ樹脂６を辿して受光素子５へ伝達され、前記受
光素子５は例えばトランジスタ動作を示し、能動動作を
行う。白色の赤外透過エポキシ樹脂６は絶縁耐圧（−次
・二次間）を高める友めに一般的に使用され、約５ＫＶ
以上の絶縁耐力を保証している。しかし、白色の赤外透
過エポキシ樹脂６は太陽光等の外部の光を受け、その外
部の光に工って受光素子５が電気的動作を起こすことが
あり、誤動作を起こすととがしばしばあつ定。Next, the operation will be explained. When a current is passed through the infrared light emitting diode 3, the infrared light emitting diode 3 has a wavelength of approximately 900 nm.
A certain amount of infrared light is generated. This infrared light follows the white infrared transmitting epoxy resin 6 and is transmitted to the light receiving element 5, and the light receiving element 5 exhibits, for example, a transistor operation and performs an active operation. White infrared-transmissive epoxy resin 6 is commonly used to increase the dielectric strength voltage (-secondary and secondary), and is approximately 5KV.
The dielectric strength is guaranteed as above. However, the white infrared-transmissive epoxy resin 6 receives external light such as sunlight, and the light-receiving element 5 may operate electrically due to the external light. Fixed.
従来の半導体装置は、以上のように構成されているので
、外部の光を遮光する構造にしなければならず、白色の
赤外透過エポキシ樹脂の表面に赤外光を遮光する例えば
赤外光不透過のエポキシ樹脂を施こす二重モールド構造
が必要で、また二重モールド構造にコストアップになる
ほどの問題があった。Conventional semiconductor devices are configured as described above, so they must have a structure that blocks external light. A double mold structure is required to apply a transparent epoxy resin, and the double mold structure has problems that increase the cost.
この発明は、上記のような問題点を解消する之めになさ
れたもので、赤外光を遮光できるとともに、安価にでき
る半導体装置を提供することを目的と１−でいる。The present invention has been made to solve the above-mentioned problems, and has the following objects: 1- to provide a semiconductor device that can block infrared light and can be manufactured at low cost;
この発明に係る半導体装置は、赤外透過エポキシ樹脂表
面の少なくとも一面に赤外光遮光体をコーティングした
ものである。A semiconductor device according to the present invention has an infrared light shield coated on at least one surface of an infrared transmitting epoxy resin.
この発明における赤外光遮光体は、赤外光を吸収するた
め、太陽光等の直射日光を当てても受光素子は動作しな
くなる。Since the infrared light shielding body in this invention absorbs infrared light, the light receiving element will not operate even if it is exposed to direct sunlight such as sunlight.
以下、図面を用いて本発明の実施例を詳細に説明する。 Embodiments of the present invention will be described in detail below with reference to the drawings.
第１図は本発明による半導体装置の一実施例を示す断面
図であり、前述の図と同一部分には同一符号を付しであ
る。同図において、赤外発光ダイオード３お工び受光素
子を搭載したフレーム１゜４が封止された赤外透過エポ
キシ樹脂６の上面お工び下面には、赤外光を遮光する例
えばインクまたはフィルム等から々る遮光体Ｔがコーテ
ィングされている。FIG. 1 is a sectional view showing an embodiment of a semiconductor device according to the present invention, and the same parts as in the previous figures are given the same reference numerals. In the same figure, the upper and lower surfaces of the infrared transmitting epoxy resin 6 in which the frame 1゜4 mounted with the infrared light emitting diode 3 and the light receiving element are sealed are coated with ink or other materials that block infrared light. It is coated with a light shielding material T made of a film or the like.
このような構成において、赤外遮光体７としてのインク
もしくはフィルムは、白色の赤外透過エポキシ樹脂６’
ｋ）ランファモールドしたフレーム状テゴムローラー等
の装置を使って前記白色の赤外透過エポキシ樹脂６０表
面に赤外遮光体７全コーテイングをするｔめ、非常に簡
単に製作でき、更に、この赤外遮光体７が外部からの赤
外光を遮断してしまうため、太陽光等が直射しても誤動
作を起こすことは全くなくなり、極めて安定したホトカ
ブラとなる。In such a configuration, the ink or film as the infrared light shielding body 7 is a white infrared transmitting epoxy resin 6'.
k) Coating the entire surface of the white infrared transmitting epoxy resin 60 with the infrared light shielding body 7 using a device such as a frame-shaped rubber roller that has been molded with a run, is very easy to manufacture; Since the outer light shielding body 7 blocks infrared light from the outside, there is no malfunction at all even when sunlight or the like hits directly, resulting in an extremely stable photocoupler.
なお、上記実施例では白色の赤外透過エポキシ樹脂の上
面、下面にのみ赤外遮光体をコーティングしたが、熱圧
着式のフィルムをのせる等の方法で前記白色の赤外透過
エポキシ樹脂全面にコーティングしてもよい。また、上
記実施例ではホトトランジスタカブラ、ホトサイリスタ
カブラ等についてｉ発明したが、ホトトライアックカブ
ラ、ホトＩＣカブラや他の光を利用するものであっても
よく、上記実施例と同様の効果を奏する。In the above example, the infrared light shielding material was coated only on the top and bottom surfaces of the white infrared transparent epoxy resin, but the entire surface of the white infrared transparent epoxy resin was coated by a method such as placing a thermocompression film. May be coated. Further, in the above embodiments, a phototransistor coupler, a photothyristor coupler, etc. were invented, but a phototriac coupler, a photo IC coupler, or another device using light may be used, and the same effects as in the above embodiments can be obtained. .
以上説明した工うに、本発明によれば、透光性樹脂−ｆ
ｓ！開に赤外遮光体をコーティングし友ので、装置が安
価にでき、また精度の高い半導体装置が得られる効呆が
ある。According to the method described above, according to the present invention, the translucent resin -f
s! Since the infrared shielding material is coated on the substrate, the device can be made at a low cost, and it is also possible to obtain a semiconductor device with high precision.
第１図は本発明による半導体装置の一実施例を示す断面
図、！！２図は従来の半導体装置を示す断面図である。
１・・・・赤外発光ダイオードを搭載するフレーム、２
・・・・Ａｇペースト、３◆会・・赤外発光ダイオード
、４・・・・受光素子を搭載するフレーム、５・・・・
受光素子、６・・・・白色。
赤外透過エポキシ函脂、１・・・・赤外遮光体。
代 理 人 大 岩 増 雄
第１図
第２図
手続補正書（自発）FIG. 1 is a sectional view showing an embodiment of a semiconductor device according to the present invention. ! FIG. 2 is a sectional view showing a conventional semiconductor device. 1... Frame equipped with an infrared light emitting diode, 2
...Ag paste, 3..Infrared light emitting diode, 4..Frame on which the light receiving element is mounted, 5..
Light receiving element, 6...white. Infrared transmitting epoxy resin, 1... Infrared light shielding body. Agent Masuo Oiwa Figure 1 Figure 2 procedural amendment (voluntary)
Claims (1)
部を透光性樹脂で一体化した半導体装置において、上記
透光性樹脂の少なくとも一面に赤外遮光体をコーティン
グしたことを特徴とする半導体装置。A semiconductor device in which a light-emitting element and a light-receiving element are disposed facing each other and their peripheral parts are integrated with a translucent resin, characterized in that at least one surface of the translucent resin is coated with an infrared shielding material. Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61037792A JPS62194687A (en) | 1986-02-20 | 1986-02-20 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61037792A JPS62194687A (en) | 1986-02-20 | 1986-02-20 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62194687A true JPS62194687A (en) | 1987-08-27 |
Family
ID=12507344
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61037792A Pending JPS62194687A (en) | 1986-02-20 | 1986-02-20 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62194687A (en) |
-
1986
- 1986-02-20 JP JP61037792A patent/JPS62194687A/en active Pending
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