JPS62197870U - - Google Patents
Info
- Publication number
- JPS62197870U JPS62197870U JP8735586U JP8735586U JPS62197870U JP S62197870 U JPS62197870 U JP S62197870U JP 8735586 U JP8735586 U JP 8735586U JP 8735586 U JP8735586 U JP 8735586U JP S62197870 U JPS62197870 U JP S62197870U
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- main surface
- unevenness
- semiconductor layer
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Description
第１図ａ〜ｄは本考案実施例装置の製造工程を
示す工程別断面図、第２図ａ，ｂは他の実施例を
説明するための断面図である。 １……基板、２……溝（凹凸）、３……ＺｎＳ
ｅ層（化合物半導体層）。
示す工程別断面図、第２図ａ，ｂは他の実施例を
説明するための断面図である。 １……基板、２……溝（凹凸）、３……ＺｎＳ
ｅ層（化合物半導体層）。
Claims (1)
- 一主面に凹凸を有する基板、該基板の一主面に
積層され均一な膜厚を有する化合物半導体層を備
えたことを特徴とする半導体発光素子。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8735586U JPS62197870U (ja) | 1986-06-09 | 1986-06-09 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8735586U JPS62197870U (ja) | 1986-06-09 | 1986-06-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62197870U true JPS62197870U (ja) | 1987-12-16 |
Family
ID=30944484
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8735586U Pending JPS62197870U (ja) | 1986-06-09 | 1986-06-09 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62197870U (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09283845A (ja) * | 1996-04-18 | 1997-10-31 | Matsushita Electric Ind Co Ltd | 半導体発光素子及びその製造方法 |
-
1986
- 1986-06-09 JP JP8735586U patent/JPS62197870U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09283845A (ja) * | 1996-04-18 | 1997-10-31 | Matsushita Electric Ind Co Ltd | 半導体発光素子及びその製造方法 |
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