JPS62202077A - High-frequency ion plating device - Google Patents

Abstract

PURPOSE:To eliminate interference action between the coils and to contrive stabilization of plasma by symmetrizing plural coils for exciting high-frequency wave and identifying both the densities of plasma generated in the coils and the phase of high-frequency wave. CONSTITUTION:A high-frequency ion plating device is composed of a vacuum vapor deposition chamber 1, the evaporation sources 3 provided therein, a supporting base 4 holding a material 41 to be treated, a DC electric power source 9 for acceleration impressing voltage between the base 4 and the evaporation sources 3, the coils 5 for exciting high-frequency wave, a matching box 7, and a high-frequency electric power source 8 impressing electric power to the coils 5 via the matching box. The above-mentioned coils 5 mutually have the positional relation of point symmetry in plane sight and are mutually parallel connected to the above-mentioned electric power source 8 via the above- mentioned box 7.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a high frequency ion plating apparatus used to form a film of indium oxide as a transparent conductive film, titanium nitride for a golden color, etc. It is something.

[Conventional technology] High frequency ion plating method using high frequency excitation is
For example, the ionization efficiency is higher than that of other ionization methods for evaporated particles such as direct current application methods, and there is less temperature rise and back spatter on the object to be processed (hereinafter referred to as the substrate).
Therefore, it has many excellent features such as being able to be used for coating plastics and being easy to perform reactive ion plating such as plasma CVD.
Its use has been increasing in recent years.

The mechanism of this high frequency ion plating will be explained using a typical high frequency ion plating apparatus shown in FIG.

This conventional i-position consists of a vacuum deposition chamber 100 and a vacuum deposition chamber 1.
00, an evaporation source 102 to which evaporation power is supplied by a power supply 101, a substrate 103 provided at a position facing the evaporation source 102, and an evaporation source 102 and a substrate 103.
an accelerating DC power supply 104 that applies a DC electric field between the
The axis between the evaporation source 102 and the substrate 103 is the evaporation source 102.
It is comprised of a high frequency excitation coil 105 that is provided to substantially coincide with a straight line connecting the substrate 103 and a high frequency power source 107 that supplies high frequency power to the coil 105 via a matching box 106.

In the conventional high-frequency ion plating apparatus configured as described above, first, the vacuum deposition chamber 100 is brought to a high vacuum, and then argon gas or the like is introduced from the gas introduction pipe 108.
Generally, the pressure is 10 −4 orr or less. Next, when high-frequency power is supplied to the coil 105 via the matching box 106, the few electrons present in the gas collide with gas molecules or evaporation particles evaporated in the evaporation source 102, and absorb the energy of the high-frequency electric field. It is absorbed, gradually accelerated, and finally ionizes gas molecules or evaporated particles and releases electrons. The electrons are also accelerated to other gas molecules,
Ionizes and ionizes the evaporated particles. Then, the ions enter a trapped state, and the ion density around the coil increases, resulting in an ion source state.

The ions are then accelerated and collide with the substrate 103 connected to the cathode of the acceleration DC power source. During this process, discharge occurs, and gas ions clean the surface of the substrate 103.
The evaporated particles are deposited on the surface of the substrate 103.

Here, a matching operation is necessary to effectively supply high-frequency power into the device, and usually the power ratio of the incident wave and the reflected wave is 10:1 or more. It is determined by the range of resistance variation, the shape of the coil, and the geometry within the device.

Furthermore, in order to uniformly form 'faIII on a larger substrate, an apparatus has been proposed in which a plurality of evaporation sources, for example two, are provided and the evaporation sources are simultaneously evaporated.

For example, Japanese Patent Publication No. 57-41807 discloses a device in which a single coil 203 with a large diameter is arranged to cover both of two evaporation sources 201 and 202, as schematically shown in FIG.

Also, JP-A-58-. Publication No. 141382 discloses a device in which coils 303 and 304 are arranged in two evaporation sources 301 and 302, respectively, and high-frequency power is supplied by separate high-frequency power sources 305 and 306, as schematically shown in FIG. ing.

Furthermore, at the 1985 General Vacuum Exhibition held at the Tokyo Science and Technology Museum from September 10, 1985, two evaporation sources 401 and 402 were connected in series, as shown schematically in Figure 7. A device with two coils 403 and 404 is on display.

[Problems to be Solved by the Invention] The conventional high-frequency ion plating apparatus described above having a plurality of evaporation sources is not yet sufficient to obtain a thin film with uniform film quality. Note that film quality refers to film thickness, crystallinity, etc.

For example, in an apparatus using a coil with a large diameter as shown in FIG. 5, although the plasma is stable, the density of the plasma differs locally, and the quality of the film may become non-uniform. Also, as shown in Figure 6? ! In a device in which high-frequency power is supplied to each individual coil, it is difficult to match the phases of the respective high-frequency waves, and the electric fields of the coils interfere with each other, making the plasma state unstable and making matching difficult. Furthermore, in a device using continuous coils as shown in Figure 7, although the plasma becomes high density,
Since the coils are arranged in series, the plasma density generated in each coil may differ, resulting in non-uniform film quality.

The present invention has been made in view of the above problems, and it is an object of the present invention to provide a high frequency ion plating apparatus that is capable of forming a thin film of uniform quality even on a large substrate.

[Means for Solving the Problems] The high frequency ion plating apparatus of the present invention includes a high frequency ion plating apparatus main body, a vacuum deposition chamber provided within the main body, and a plurality of high frequency ion plating apparatuses provided within the vacuum deposition chamber. An evaporation source, a support stand provided at a position facing the evaporation source in the vacuum evaporation chamber and holding a processed object, and an accelerating DC power source applied between the evaporation source and the support stand. , a plurality of high-frequency excitation coils provided between each of the evaporation sources and the support base so that at least a straight line connecting each of the evaporation sources and the support base passes through in the axial direction; a matching box installed outside the vacuum deposition chamber and having a matching circuit;
In a high-frequency ion plating apparatus comprising a high-frequency power source that supplies high-frequency excitation power to the high-frequency excitation coil from outside the vacuum deposition chamber via the matching box, the plurality of high-frequency excitation coils are arranged in a plan view. They are located in a point-symmetrical position with respect to each other, and are connected in parallel to a single cough high-frequency power source via a single matching box.

As in the past, the vacuum deposition chamber is composed of, for example, a Pel jar and a bottom plate that airtightly covers the opening of the Pel jar.
A high vacuum is created using a vacuum pump, etc. Its material, shape, etc. may be the same as conventional ones. In addition, the vacuum M chamber is generally provided with an ionized gas introduction section such as argon gas, and the degree of vacuum is generally 1O-4 as in the past.
The pressure is assumed to be less than Torr. Further, if the electron W* method is employed as the evaporation means of the evaporation source, the evaporated particles can be ionized without introducing an ionized gas, and high vacuum ion plating is also possible. Further, when performing plasma CVD or the like, a reactive gas introduction section may be provided.

The evaporation source is a part where the substance to be evaporated becomes evaporated particles by heating, etc., and as in the past, it is a spiral type, boat type,
A box-shaped, crucible-shaped, etc.-shaped evaporation source is heated by resistance heating method, anode material impact type, electron beam heating type, etc.
Methods such as vaporization using an electron impact method using a type/type such as a magnetic field deflection type can be adopted.

The support table is a part that holds the substrate as in the conventional case, and is connected to the cathode of the acceleration DC power source. By the way, this accelerating DC power source is for accelerating the generated ions toward the substrate, and as in the past, a 3KV voltage is applied between the substrate and the evaporation source so that the substrate becomes the cathode and the evaporation source becomes the anode. The following voltages may be applied.

The high frequency excitation coil is formed by winding a wire member made of copper or the like into a coil shape, as in the past, and generally has a winding number of 2 to 5 and a coil diameter of 20 to 40 cm.

The matching box is for performing a matching operation for effectively supplying high frequency power into the apparatus, and can have the same configuration as the conventional one. It is desirable to match the incident wave so that the power ratio of the reflected wave is 10:1 or less.

This matching is determined by the variation range of the discharge resistance due to the difference in gas pressure, the shape of the high-frequency excitation coil, and the geometric arrangement within the device.

The high frequency power is supplied to the high frequency excitation coil via the matching box, and the frequency is 13.56M as before.
Hz, high frequency power of 100 to 1000 W is supplied.

The greatest feature of the present invention is that a plurality of the above-mentioned high-frequency excitation coils are arranged at the positions of a plurality of evaporation sources, and the high-frequency excitation coils are positioned in a point-symmetrical relationship with respect to each other in plan view. and are mutually connected in parallel to a single high frequency power supply via a single matching box.

The number of high-frequency excitation coils can be freely selected, such as two or three. These high-frequency excitation coils may have different reactances, but in order to make the plasma density more uniform, it is desirable to use coils with the same reactance. Note that the respective high-frequency excitation coils are located in a point-symmetrical position with respect to the electrode. By arranging them in this way, the interference of the plasma on each high-frequency excitation coil will be minimized.
Furthermore, since the distance between each high-frequency excitation coil and the wall of the vacuum deposition chamber can be made the same, the quality of the thin film formed on the substrate becomes even more uniform.

[Function] In the high frequency ion plating apparatus of the present invention, high frequency power is first supplied to each high frequency excitation coil via a matching box. The high-frequency excitation ionizes the gas and the evaporated particles evaporated in the evaporation source, generating plasma.

Here, the respective high-frequency excitation coils are positioned point-symmetrically with respect to each other in a plan view, and are connected to a single high-frequency power source via a single matching box, and between the evaporation source and the support base. are connected in parallel with each other. Therefore, if the phases of the high-frequency waves supplied to the respective high-frequency excitation coils are the same, and the reactances are also the same, the density of the generated plasma will also be the same. The generated ions are accelerated by the W & power source and collide with the substrate.
The gas ions clean the substrate surface, and the ions of the evaporated particles form a thin film on the substrate.

[Effects of the Invention] According to the high-frequency ion plating apparatus of the present invention, the high-frequency power supplied to each high-frequency excitation coil is the same, so the density of plasma generated in each high-frequency excitation coil can be made to be the same. can do. Furthermore, since the phases of the high frequency waves supplied to the respective high frequency excitation coils are the same, there is almost no interference between the high frequency excitation coils, and the plasma can be stabilized.

Furthermore, since the high-frequency excitation coil is provided at each evaporation source, its diameter can be made sufficiently small and high-density plasma can be obtained. Therefore, due to these effects, by using the high frequency ion plating apparatus of the present invention, a thin film of uniform quality can be formed even on a large substrate.

[Example] (Example 1) This will be explained in detail below using Examples.

FIG. 1 shows a high frequency ion plating apparatus according to an embodiment of the present invention. This device includes a pelger 1, a bottom plate 2 that airtightly covers the opening of the pelger 1, and a bell jar. - two crucibles (evaporation sources) 3 fixed to the bottom plate 2 in the interior, and a support stand 4 provided vertically above each crucible 3;
A substrate 41 held on the lower surface of the support base 4, two high-frequency excitation coils 5 provided between each crucible 3 and the substrate 41 and whose axial center lines intersect perpendicularly to the crucible 3, and the bottom plate 2 externally. An evaporation power source 6 supplies power for evaporation to the crucible 3 using a resistance heating method, and a high frequency excitation coil 5 is connected from the outside of the bottom plate 2 via a matching box 7, and a total of 600 W of high frequency power is supplied to the high frequency excitation coil 5. It is composed of a high frequency power source 8 that supplies electric power, and a 500 V acceleration DC 1 [9 that applies an acceleration electric field between the crucible 3 and the substrate 41. Note that crucible 3 contains titanium oxide (Tilt).
) is included. The bottom plate 2 is also provided with an exhaust port 21 that communicates with a vacuum pump (not shown), and a gas inlet 22 that communicates argon (not shown) with a gas cylinder.

The high-frequency excitation coil 5, which is a feature of this embodiment, is connected to the bottom plate 2.
One electrode 51 provided in the middle shaft branches into a substantially Y-shape, and its winding direction and end shape are symmetrical as shown in the plan view in FIG. 2, and two high-frequency excitation Coil 5
have the same number of turns and the same reactance.

A method of using the high frequency ion plating apparatus of this embodiment configured as described above will be explained below.

First, the air inside the Pelger 1 is exhausted from the exhaust port 21 to create a high vacuum. Then, argon gas is introduced into the Pel jar 1 from the gas inlet 22, and the inside of the Pel jar 1 is heated to 1O-4T.
orr pressure. Next, Rupo 3 is powered by evaporation power source 6.
At the same time, a total of 1i600
High frequency power of W is supplied. Then, the few electrons that exist in Pelger 1 for some reason collide with argon gas molecules or evaporated particles evaporated in crucible 3, absorb the energy of the high-frequency electric field, and gradually accelerate.
Finally, the argon gas molecules or evaporated particles are ionized and emit electrons. The electrons are also accelerated and ionize other argon gas molecules or evaporated particles. Then, the ions enter a trapped state, and the ion density around the coil 5 increases, resulting in an ion source state. The ions are then accelerated and collide with the substrate 41 connected to the cathode of the acceleration DC power source 9. During this process, discharge occurs, gas ions clean the surface of the substrate 41, and evaporated particles clean the surface of the substrate 41.
Deposit on the surface.

Here, the two high-frequency excitation coils 5 are branched from one electrode 51 and provided in parallel. Therefore, the phases of the high frequency waves supplied to the two high frequency excitation coils 5 are the same, so there is no interference between the high frequency excitation coils 5, a stable plasma state is achieved, and matching is easy. The densities of the plasma generated by the two high-frequency excitation coils were almost the same, and a uniform thin film with good crystallinity could be formed on the substrate 4.

Note that since the plasma density is proportional to the amount of ion current, the plasma density was evaluated by measuring the amount of ion current with a Faraday cup. The amount of ion current generated by the high-frequency excitation coil 5 of this embodiment when 600 W of high-frequency power was applied was 50 μA, but about 1.0 μA when 600 W was applied to the conventional large-scale high-frequency excitation coil shown in FIG. This was five times as much as the ion current amount when 300 W was applied to each of the two high-frequency excitation coils shown in FIG.

(Example 2) In this example, three high-frequency excitation coils 1o are used, and as shown in the plan view in FIG. , are the same as in Example 1 except that they are arranged point-symmetrically in plan view with respect to the electrode 11.

The high frequency ion plating apparatus of this embodiment can form a thin film of uniform quality on a larger substrate than the apparatus of the first embodiment.

[Brief explanation of drawings]

1 and 2 are diagrams relating to a high-frequency ion plating apparatus as a practical example of the present invention, FIG. 1 is a schematic cutaway front view thereof, and FIG. 2 is a plan view of a high-frequency excitation coil. . FIG. 3 is a cutaway plan view showing the arrangement of high-frequency excitation coils in a high-frequency ion plating apparatus according to another embodiment of the present invention. 4, 5, 6, and 7 are schematic cutaway front views showing conventional high-frequency ion plating apparatuses, respectively. 1... Pelger (vacuum deposition chamber) 2... Bottom plate 3.
12... Crucible (evaporation source) 4... Support stand 5.1
1... Coil for high frequency excitation 6... Power source for evaporation 7.
...Matching box 8...High frequency M source 9
...Acceleration DC power supply 10.51...Electrode 21...Exhaust port 22...Gas inlet port 41...
Board (Figure 3, Figure 1, Figure 4, Figure 6, voluntary amendment to the procedure) 5 May 7, 1986, Director General of the Office of Corrections, Mr. Uga Michibu, 1, Indication of the incident 6, 1986 Patent Application No. 044372, 2, Name of the invention: High-frequency ion plating device 3, Relationship with the person making the amendment Patent applicant: 1 Toyota-cho, Futa City, Aichi Prefecture (320) Toyota Motor Corporation Representative: Kiyohaka Matsumoto (1 person) 4. Agent Kodama Building, 3-3-4 Meieki, Nakamura-ku, Nagostrata City, Aichi Prefecture 450 (telephone: <052> 583-9720), the description of the subject matter of the amendment - the scope of the claims, and the details of the invention in the description. (1) In the scope of claims column of the specification, the phrase "within the main body" is amended to read "within the main body" as shown in the attached sheet. (2) On page 5 of Specification 1, lines 6 to 7, it states that ``The power ratio of the normal incident wave and the reflected wave is 10:1 or more''. (3) From the 4th line of page 10 of Akira Moku, the power ratio of the incident wave and the reflected wave is 10 to 1. below” is written [
The ratio of incident wave and reflected wave (incident wave/reflected wave) is corrected to 10 or more and 1J. Attachment 2, Claims (1) A high-frequency ion plating apparatus main body, a vacuum deposition chamber provided within the main body, a plurality of evaporation sources provided within the vacuum deposition chamber, and M vacuum M
a support stand arranged at a position facing the evaporation source in the arrival chamber and holding the object to be processed; an accelerating DC power source that applies an accelerating electric field between each of the evaporation sources and the support stand; a plurality of high-frequency excitation coils provided between each evaporation source and the support base so that at least a straight line connecting each evaporation source and the support base passes through in the axial direction; and the vacuum A high-frequency ion plating device comprising: a matching box provided outside the vacuum deposition chamber and having a matching circuit; and a high-frequency power source that supplies high-frequency excitation power to a cough high-frequency excitation coil from outside the vacuum deposition chamber via the matching box. In the above, the plurality of high-frequency excitation coils are positioned in a point-symmetrical relationship with each other in a plan view, and are mutually connected in parallel to the single high-frequency power source via the single matching box. A high-frequency ion plating device characterized by: (2) The high-frequency ion plating apparatus according to claim 1, wherein the reactance of each high-frequency excitation coil is equal to one. (3) The high-frequency ion plating apparatus according to claim 1, wherein two high-frequency excitation coils are provided. (4) The high frequency ion plating apparatus according to claim 1, wherein three high frequency excitation coils are provided.

Claims (4)

[Claims] (1) A high-frequency ion plating apparatus main body, a vacuum evaporation chamber provided within the main body, a plurality of evaporation sources provided within the vacuum evaporation chamber, and a position facing the evaporation sources within the vacuum evaporation chamber. a support stand provided to hold the object to be processed; an accelerating DC power source that applies an accelerating electric field between each evaporation source and the support stand; and between each evaporation source and the support stand; a plurality of high-frequency excitation coils provided so that at least a straight line connecting each of the evaporation sources and the support stand passes through in the axial direction; and a matching box provided outside the vacuum evaporation chamber and having a matching circuit. , a high-frequency ion plating apparatus comprising: a high-frequency power source that supplies high-frequency excitation power to the high-frequency excitation coil from outside the vacuum deposition chamber via the matching box; A high-frequency ion plating apparatus characterized in that the high-frequency ion plating apparatuses are arranged in a point-symmetrical positional relationship with respect to each other, and are mutually connected in parallel to the single high-frequency power source via the single matching box. (2) The high frequency ion plating apparatus according to claim 1, wherein the reactances of the respective high frequency excitation coils are the same. (3) The high-frequency ion plating apparatus according to claim 1, wherein two high-frequency excitation coils are provided. (4) The high frequency ion plating apparatus according to claim 1, wherein three high frequency excitation coils are provided.