JPS622246B2 - - Google Patents

Info

Publication number
JPS622246B2
JPS622246B2 JP56130959A JP13095981A JPS622246B2 JP S622246 B2 JPS622246 B2 JP S622246B2 JP 56130959 A JP56130959 A JP 56130959A JP 13095981 A JP13095981 A JP 13095981A JP S622246 B2 JPS622246 B2 JP S622246B2
Authority
JP
Japan
Prior art keywords
infrared
passing
detector
signal
detected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56130959A
Other languages
Japanese (ja)
Other versions
JPS5832131A (en
Inventor
Kenichi Shibata
Shoichi Nakano
Toshiaki Yokoo
Yukinori Kuwano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP56130959A priority Critical patent/JPS5832131A/en
Priority to US06/407,582 priority patent/US4485305A/en
Priority to GB08223932A priority patent/GB2105033B/en
Publication of JPS5832131A publication Critical patent/JPS5832131A/en
Publication of JPS622246B2 publication Critical patent/JPS622246B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02Constructional details
    • G01J5/08Optical arrangements
    • G01J5/0803Arrangements for time-dependent attenuation of radiation signals
    • G01J5/0805Means for chopping radiation
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/34Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
    • G01J5/35Electrical features thereof
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/314Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry with comparison of measurements at specific and non-specific wavelengths
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Radiation Pyrometers (AREA)

Description

【発明の詳細な説明】 本発明は赤外線検出器に関する。[Detailed description of the invention] The present invention relates to an infrared detector.

近時の赤外線検出器では、その赤外線検出部に
例えば焦電型の赤外線検出体が内蔵されている。
斯る赤外線検出体は入射赤外線の変化量に基づい
て電荷を発生する特性を有し、又上記赤外線検出
体の検出精度は入射赤外線量の変化が周期的であ
る程向上し、従つて上記赤外線検出体に入射する
赤外線を周期的に断続する必要があり、このため
に第1図a及びbに示す如く赤外線検出器1の前
方にはモータ2によつて周期的に回転駆動される
金属板チヨツパ3が配置されている。斯る構成は
特公昭53―10467号公報にも示されている。
In recent infrared detectors, for example, a pyroelectric infrared detector is built into the infrared detector.
Such an infrared detector has a characteristic of generating electric charge based on the amount of change in the amount of incident infrared rays, and the detection accuracy of the infrared detector improves as the amount of incident infrared rays changes more periodically. It is necessary to periodically interrupt the infrared rays incident on the detection object, and for this purpose, as shown in FIG. Chiyotsupa 3 is placed. Such a configuration is also shown in Japanese Patent Publication No. 10467-1983.

しかし乍ら、斯るチヨツパ3は形状が大きくス
ペース上の問題があり、且つ上記モータ2は回転
むらを生じて必ずしもチヨツパ3を周期的に回転
駆動しないため検出精度の低下を招いてしまう。
However, such a chopper 3 has a large shape and there is a space problem, and the motor 2 has uneven rotation and does not necessarily rotate the chopper 3 periodically, resulting in a decrease in detection accuracy.

本発明は斯る点に鑑みてなされたもので、以下
本発明実施例を図面に基づいて詳述する。
The present invention has been made in view of these points, and embodiments of the present invention will be described in detail below with reference to the drawings.

第2図は赤外線検出器4を示し、5はタンタル
酸リチウム(LiTaO3)単結晶から成り入射赤外線
変化量に応じて電荷を発生する焦電型の赤外線検
出体、6及び7は夫々該赤外線検出体の表、裏面
にニクロム蒸着膜にて形成された表、裏面電極、
8は銅、燐青銅などからなる金属性支持台で、該
支持台上には、上記裏面電極7を支持台8上面に
対向するようにして、上記赤外線検出体5が銀ペ
ーストなどの導電性接着剤9にて固着されてい
る。
FIG. 2 shows an infrared detector 4, in which 5 is a pyroelectric infrared detector made of lithium tantalate (LiTaO 3 ) single crystal and generates a charge according to the amount of change in incident infrared rays, and 6 and 7 are infrared ray detectors, respectively. Front and back electrodes formed with nichrome vapor deposited film on the front and back sides of the detection object,
Reference numeral 8 denotes a metal support made of copper, phosphor bronze, etc., on which the back electrode 7 faces the upper surface of the support 8, and the infrared detector 5 is made of conductive material such as silver paste. It is fixed with adhesive 9.

10はアルミナ基板、11は該基板上に配置さ
れ、上記赤外線検出体5が高抵抗であるが故に斯
る高抵抗を低抵抗に変換するためのインピーダン
ス変換回路、12は金属性のキヤツプ13及びヘ
ツダ14からなる収納体で、該収納体内の上記ヘ
ツダ14上には上記検出体5が固定された支持台
8及び上記インピーダンス変換回路11が配置さ
れた基板10が固定されている。15は上記ヘツ
ダ14に直接植設されたアース端子で、該端子は
上記支持台8及び接着剤9を介して上記裏面電極
7に電気的に接続されている。16及び17は
夫々上記ヘツダ14に絶縁材18,19を介して
植設された第1、第2リード端子、20は上記表
面電極6とインピーダンス変換回路11とを結線
するリード線21,22は上記インピーダンス変
換回路11と第1、第2リード端子16,17と
を結線するリード線である。
10 is an alumina substrate; 11 is an impedance conversion circuit disposed on the substrate; since the infrared detector 5 has a high resistance, an impedance conversion circuit is used to convert the high resistance into a low resistance; 12 is a metal cap 13; The storage body includes a header 14, and on the header 14 inside the storage body, a support base 8 on which the detection body 5 is fixed and a substrate 10 on which the impedance conversion circuit 11 is arranged are fixed. Reference numeral 15 denotes a ground terminal that is directly implanted in the header 14, and this terminal is electrically connected to the back electrode 7 via the support base 8 and adhesive 9. 16 and 17 are first and second lead terminals implanted in the header 14 via insulating materials 18 and 19, respectively; 20 are lead wires 21 and 22 connecting the surface electrode 6 and the impedance conversion circuit 11; This is a lead wire that connects the impedance conversion circuit 11 and the first and second lead terminals 16 and 17.

23は上記赤外線検出体5に表面電極6側から
赤外線を入射せしめるべく上記キヤツプ13に穿
設された開口で、該開口は直径8mmの円形、8mm
平方の正方形又は長方形を有している。24は上
記開口23と同形状を有し斯る開口23を閉塞す
る第1赤外線透過体で、該誘過体は波長2〜5μ
mの赤外線に対する透過率が高い厚さ数100μm
のシリコン又はゲルマニウム板からなつている。
尚、上記第1赤外線透過体24と赤外線検出体5
との間隔Tは500μm〜3cmとなつている。25
はアルミニウム、金、銀などの赤外線非通過材料
からなり、上記第1赤外線透過体24の下面にて
紙面に垂直方向に延設された線状の複数の第1赤
外線非通過体で、該非通過体の幅Wは1μm〜2
mm、厚さDは0.1〜100μmとなつている。更に上
記第1赤外線非通過体25は互いに所定寸法tを
有して離間しており、その寸法tは上記幅Wの寸
法と同一である。そして、斯る寸法tに対応する
部分は複数の第1赤外線通過部となつている。2
6は上記収納体12内において間隔d(=0.1μ
m〜1cm)を有して上記第1赤外線透過体24に
近接対向する第2赤外線透過体で、該透過体は上
記第1赤外線透過体24と同様に上記開口23と
同形状を有し且つ波長2〜15μmの赤外線に対す
る透過率が高い厚さ数100μmのシリコン又はゲ
ルマニウム板からなつている。27は上記第2赤
外線透過体26の上面にて上記第1赤外線非通過
体25と同一方向(紙面に垂直な方向)に延設さ
れた線状の複数の第2赤外線非通過体で、該非通
過体は上記第1赤外線非通過体25と同様にアル
ミニウム、金、銀などの赤外線非通過材料からな
り、第2赤外線非通過体27の幅W′は1μm〜
2mm、厚さD′は0.1〜100μmとなつている。更
に、上記第2赤外線非通過体27は互いに所定寸
法t′を有して離間しており、その寸法t′は上記幅
W′の寸法と同一である。そして、斯る寸法t′に対
応する部分は複数の第2赤外線通過部となつてい
る。
Reference numeral 23 denotes an opening formed in the cap 13 to allow infrared rays to enter the infrared detector 5 from the surface electrode 6 side, and the opening is circular with a diameter of 8 mm.
It has a square or rectangular shape. 24 is a first infrared transmitting material having the same shape as the opening 23 and closing the opening 23, and the dielectric material has a wavelength of 2 to 5 μm.
Thickness of several 100 μm with high transmittance to infrared rays
It is made of silicon or germanium plate.
Note that the first infrared transmitting body 24 and the infrared detecting body 5
The distance T is 500 μm to 3 cm. 25
are a plurality of linear first infrared ray transmissive bodies made of a material that does not pass infrared rays such as aluminum, gold, or silver, and extend in a direction perpendicular to the plane of the paper on the lower surface of the first infrared transmissive body 24; Body width W is 1 μm to 2
mm, and the thickness D is 0.1 to 100 μm. Further, the first infrared ray blocking bodies 25 are spaced apart from each other by a predetermined dimension t, and the dimension t is the same as the width W. The portions corresponding to the dimension t serve as a plurality of first infrared passing portions. 2
6 is the distance d (=0.1μ) in the storage body 12.
a second infrared transmitting body that closely opposes the first infrared transmitting body 24 and having a diameter of 1 cm to 1 cm), the transmitting body has the same shape as the opening 23 like the first infrared transmitting body 24, and It is made of a silicon or germanium plate several hundred micrometers thick that has high transmittance to infrared rays with a wavelength of 2 to 15 micrometers. Reference numeral 27 denotes a plurality of linear second infrared non-transmissive bodies extending in the same direction as the first infrared non-transmissive body 25 (direction perpendicular to the plane of the paper) on the upper surface of the second infrared transparent body 26; The passing body is made of an infrared ray blocking material such as aluminum, gold, silver, etc., like the first infrared ray blocking body 25, and the width W' of the second infrared ray blocking body 27 is 1 μm to 1 μm.
2 mm, and the thickness D' is 0.1 to 100 μm. Furthermore, the second infrared ray blocking bodies 27 are spaced apart from each other by a predetermined dimension t', and the dimension t' is equal to the width.
It is the same as the dimension of W′. The portions corresponding to the dimension t' serve as a plurality of second infrared passing portions.

28は2枚の圧電板を張り合わせて形成された
振動体、即ちバイモルフで、該バイモルフは下端
にて上記ヘツダ14に設けられた絶縁台29に固
定され、上端には上記第2赤外線透過体26が取
着されている。上記バイモルフ28の形状は直方
体であり、その高さhは1〜3mm、厚みaは50μ
m〜5mm、幅(紙面に垂直方向の寸法)は0.5〜
15mmである。そして、上記バイモルフ28は水
晶、ロツシエル塩、酒石酸エチレン、ジアミン、
酒石酸カリ、第一リン酸カリ、第一リン酸アンモ
ン、硫酸リチウム、チタン酸バリウム、硫酸グリ
シンなどの単結晶や、チタン酸バリウム系磁器、
ジルコン酸・チタン酸鉛系磁器、ニオブ酸系磁器
などの磁器材料からなつている。30及び31は
夫々更に上記ヘツダ14に絶縁材32,33を介
して植設された第3、第4リード端子で、該リー
ド端子は夫々上記バイモルフ28の両面に形成さ
れた電極パツド34,35に結線されている。
Reference numeral 28 denotes a vibrating body, ie, a bimorph, formed by pasting together two piezoelectric plates.The bimorph is fixed at its lower end to an insulating stand 29 provided on the header 14, and at its upper end is the second infrared transmitting body 26. is attached. The shape of the bimorph 28 is a rectangular parallelepiped, the height h is 1 to 3 mm, and the thickness a is 50 μm.
m~5mm, width (dimension perpendicular to the page) 0.5~
It is 15mm. The bimorph 28 includes crystal, Rothsiel salt, ethylene tartrate, diamine,
Single crystals such as potassium tartrate, potassium monophosphate, ammonium monophosphate, lithium sulfate, barium titanate, glycine sulfate, barium titanate porcelain,
It is made of porcelain materials such as zirconate/lead titanate porcelain and niobate porcelain. Reference numerals 30 and 31 denote third and fourth lead terminals which are respectively implanted in the header 14 via insulating materials 32 and 33, and these lead terminals are connected to electrode pads 34 and 35 formed on both sides of the bimorph 28, respectively. is connected to.

而して、斯る電極パツド34,35間に第3、
第4リード端子30,31を介して所定振幅、所
定周波数の交流駆動信号を印加すると、上記バイ
モルフ28は斯る交流駆動信号の周波数に応じて
撓み第2赤外線透過体26を矢印A方向に周期的
に振動せしめ、これにより上記第1、第2赤外線
非通過体25,27どうし及び第1、第2赤外線
通過部どうしが重畳する状態(第2図の状態)
と、第1赤外線通過部及び第1赤外線非通過体2
5と第2赤外線非通過体27及び第2赤外線通過
部とが夫々重畳する状態と、が周期的に繰返され
る。この時、上記赤外線検出体5には赤外線検出
器4外部の被検出体からの赤外線が周期的に入射
し、即ち赤外線検出体5に入射する赤外線が周期
的に変化し、従つて上記赤外線検出体5は斯る変
化量に応じた電荷を発生する。更に詳しくは、斯
る検出体5の出力としては、被検出体の温度と室
温との温度差に基づいた振幅を有し且つ上記バイ
モルフ28に印加される交流駆動信号と同一の周
波数を有する交流信号となつている。
Therefore, between the electrode pads 34 and 35, a third
When an AC drive signal with a predetermined amplitude and a predetermined frequency is applied via the fourth lead terminals 30 and 31, the bimorph 28 is bent in accordance with the frequency of the AC drive signal, and the second infrared transmitting body 26 is periodically moved in the direction of arrow A. vibrate, thereby causing the first and second infrared ray non-passing bodies 25 and 27 to overlap each other and the first and second infrared passing parts to overlap each other (the state shown in FIG. 2).
and a first infrared passing section and a first infrared non-passing body 2
5, the state in which the second infrared ray non-passing body 27 and the second infrared ray passing section overlap are periodically repeated. At this time, the infrared rays from the object to be detected outside the infrared detector 4 are periodically incident on the infrared detector 5, that is, the infrared rays that are incident on the infrared detector 5 are periodically changed. The body 5 generates an electric charge corresponding to the amount of change. More specifically, the output of the detection object 5 is an AC signal having an amplitude based on the temperature difference between the temperature of the object to be detected and the room temperature and having the same frequency as the AC drive signal applied to the bimorph 28. It's a signal.

第3図は他の実施例の赤外線検出器4sを示
し、この実施例では、第2赤外線透過体26sが
上記収納体12外において第1赤外線透過体24
に近接対向している。尚、同図におい、第1図と
同一物には同一番号を記すと共に第1図と同様の
ものには同一番号に添字sが記されている。
FIG. 3 shows an infrared detector 4s of another embodiment, in which the second infrared transmitting body 26s is located outside the storage body 12 and the first infrared transmitting body 26s is located outside the housing 12.
are closely facing. In this figure, the same parts as those in FIG. 1 are given the same numbers, and the same parts as in FIG. 1 are given the same numbers with a suffix s.

第4図は上記赤外線検出器4又は4sを含む回
路を示し、赤外線検出器4又は4s内のインピー
ダンス変換回路11は1010〜1011Ωの高入力
抵抗36、FET(電界効果トランジスタ)37
及び約10KΩの出力抵抗38にて形成されてい
る。
FIG. 4 shows a circuit including the infrared detector 4 or 4s, and the impedance conversion circuit 11 in the infrared detector 4 or 4s has a high input resistance 36 of 10 10 to 10 11 Ω, and a FET (field effect transistor) 37.
and an output resistor 38 of about 10KΩ.

そして、上記赤外線検出器4又は4sは第1リ
ード端子16にて直流電圧が供給され、第2リー
ド端子17から被検出体の温度と室温との温度差
に応じた振幅を有し且つ上記バイモルフ28に印
加される駆動信号と同一の周波数を有する交流信
号が出力される。39は室温測定を行なうダイオ
ード、40は無安定マルチバイブレータからなり
周期的パルスを発振する発振器、41は上記パル
スに基づいて上記バイモルフ28又は28sを振
動せしめる(撓ませる)ための上記交流信号(上
記パルスと同一周波数)を出力する駆動回路、4
2,43,44は直流増幅器、45はフイルタ増
幅器、46は同期検波器、47は合成回路、48
は出力端子である。
The infrared detector 4 or 4s is supplied with a DC voltage through a first lead terminal 16, and has an amplitude corresponding to the temperature difference between the temperature of the object to be detected and the room temperature from a second lead terminal 17, and has an amplitude corresponding to the temperature difference between the temperature of the object to be detected and the room temperature. An AC signal having the same frequency as the drive signal applied to 28 is output. 39 is a diode for measuring the room temperature; 40 is an oscillator made of an astable multivibrator that oscillates periodic pulses; 41 is the AC signal (described above) for vibrating (deflecting) the bimorph 28 or 28s based on the pulse; a drive circuit that outputs the same frequency as the pulse), 4
2, 43, 44 are DC amplifiers, 45 is a filter amplifier, 46 is a synchronous detector, 47 is a synthesis circuit, 48
is the output terminal.

而して、これら直流増幅器42,43,44、
フイルタ増幅器45、同期検波器46、合成回路
47の動作は特公昭53―10467号公報に見られる
回路の動作と同様であるが、敢えて上記同期検波
器46及び合成回路47の動作を詳述するに、上
記同期検波器46は、上記発振器40からのパル
スに基づいて上記フイルタ増幅器45を通つた検
出体5からの交流信号を同期検波すべく動作す
る。即ち、この場合、上記同期検波器46におい
ては、発振器40からのパルスは上記検出体5か
らの交流信号の正側又は負側の半サイクルに一致
するようになつており、更に詳しくは、被検出体
の温度の方が室温より高い場合には上記パルスは
検出体5からの交流信号の正側半サイクルに一致
し、室温の方が被検出体の温度より高い場合には
上記パルスは検出体5からの交流信号の負側半サ
イクルと一致するようになつている。而して、上
記同期検波器46は、前者の場合には上記交流信
号の振幅値に応じた正の直流信号(該信号は被検
出体の温度と室温との差を表わし且つ被検出体の
温度の方が高いことを表わしている)を出力し、
後者の場合には上記交流信号の振幅値に応じた負
の直流信号(該信号は同様の温度差を表わし且つ
被検出体の温度の方が低いことを表わしている)
を出力する。
Therefore, these DC amplifiers 42, 43, 44,
Although the operations of the filter amplifier 45, synchronous detector 46, and combining circuit 47 are similar to those of the circuit shown in Japanese Patent Publication No. 10467/1982, the operations of the synchronous detector 46 and combining circuit 47 will be described in detail. The synchronous detector 46 operates to synchronously detect the alternating current signal from the detection object 5 that has passed through the filter amplifier 45 based on the pulses from the oscillator 40. That is, in this case, in the synchronous detector 46, the pulse from the oscillator 40 coincides with the positive or negative half cycle of the AC signal from the detection object 5. When the temperature of the object to be detected is higher than the room temperature, the above pulse corresponds to the positive half cycle of the AC signal from the object to be detected 5, and when the room temperature is higher than the temperature of the object to be detected, the above pulse is detected. It is designed to coincide with the negative half cycle of the AC signal from the body 5. In the former case, the synchronous detector 46 detects a positive DC signal corresponding to the amplitude value of the AC signal (the signal represents the difference between the temperature of the object to be detected and the room temperature and the amplitude value of the object to be detected). (which indicates that the temperature is higher) is output,
In the latter case, a negative DC signal corresponding to the amplitude value of the AC signal (this signal represents a similar temperature difference and represents that the temperature of the detected object is lower)
Output.

次に、上記合成回路47は上記ダイオード39
からの直流信号(該信号は室温を表わしている)
に基づいて上記同期検波器46の出力を室温補正
すべく動作する。即ち、被検出体の温度の方が室
温より高い場合は、被検出体の温度と室温との差
に応じた同期検波器46からの正の直流信号に、
室温に応じたダイオード39からの直流信号が加
えられ、これにより上記合成回路47から被検出
体の実際の温度に応じた直流信号が出力される。
又、被検出体の温度の方が室温より低い場合は、
被検出体の温度と室温との差に応じた同期検波器
46からの負の直流信号に、同様にダイオード3
9からの直流信号が加えられ、換言すれば、室温
を表わす直流信号から上記温度差を表わす直流信
号が減じられ、これにより上記合成回路47から
被検出体の実際の温度に応じた直流信号が出力さ
れる。そして、斯る合成回路47から出力される
実際の温度に応じた直流信号は出力端子48より
所望回路へ導出される。
Next, the combining circuit 47 connects the diode 39
DC signal from (the signal represents room temperature)
Based on this, the output of the synchronous detector 46 is operated to correct the room temperature. That is, when the temperature of the object to be detected is higher than the room temperature, a positive DC signal from the synchronous detector 46 corresponding to the difference between the temperature of the object to be detected and the room temperature,
A DC signal from the diode 39 corresponding to the room temperature is added, and thereby the synthesis circuit 47 outputs a DC signal corresponding to the actual temperature of the object to be detected.
Also, if the temperature of the object to be detected is lower than room temperature,
Similarly, the diode 3 is connected to the negative DC signal from the synchronous detector 46 according to the difference between the temperature of the detected object and the room temperature.
In other words, the DC signal representing the temperature difference is subtracted from the DC signal representing the room temperature, so that the combining circuit 47 generates a DC signal corresponding to the actual temperature of the object to be detected. Output. Then, a DC signal corresponding to the actual temperature outputted from the combining circuit 47 is led out from an output terminal 48 to a desired circuit.

尚、上記各実施例を若干変更し、第5図及び第
6図に示す如き赤外線検出器49,50としても
良い。即ち、第5図における赤外線検出器49で
は、第1赤外線非通過体25,25…を一体に設
けた枠体51がスペーサ52,52を介して第1
赤外線透過体24に設けられている。第6図にお
ける赤外線検出器50では、第2赤外線透過体2
6が収納体12に設けられた別の固定台(図示し
ない)に固定されていると共に、バイモルフ28
には上記枠体51が取着されている。
Incidentally, each of the above embodiments may be slightly modified to provide infrared detectors 49 and 50 as shown in FIGS. 5 and 6. That is, in the infrared detector 49 in FIG.
It is provided in the infrared transmitting body 24. In the infrared detector 50 in FIG.
6 is fixed to another fixing base (not shown) provided in the storage body 12, and the bimorph 28
The frame body 51 is attached to the frame body 51 .

以上の説明から明らかな如く、本発明赤外線検
出器によれば、入射赤外線変化量に応じて電荷を
発生する赤外線検出体、該検出体を収納する収納
体、複数の赤外線通過部及び赤外線非通過部を有
し、被検出体からの赤外線が上記検出体に入射す
べく通過する領域に位置する一対の対向体、該一
対の対向体の赤外線通過部どうし及び赤外線通過
部どうしが略重畳する状態と、一方の対向体の赤
外線通過部及び赤外線非通過部と他方の対向体の
赤外線非通過部及び赤外線通過部とが夫々略重畳
する状態と、を周期的に繰返せしめるべく振動す
る振動体、を備えたから、赤外線検出体に入射す
る赤外線を変化せしめるためのチヨツパ及びモー
タ等が不要となり、よつて赤外線検出器自体を小
型化できると共に、赤外線検出体に入射する赤外
線はむらなく周期的に変化するため高精度の下に
赤外線検出を行なうことができる。
As is clear from the above description, the infrared detector of the present invention includes an infrared detecting body that generates a charge according to the amount of change in incident infrared light, a storage body that houses the detecting body, a plurality of infrared passing parts, and an infrared non-passing part. a pair of opposing bodies located in a region through which infrared rays from the object to be detected pass in order to be incident on the object to be detected, a state in which the infrared passing parts of the pair of opposing bodies and the infrared passing parts substantially overlap each other; and a state in which the infrared passing portion and the infrared non-passing portion of one opposing body substantially overlap with the infrared passing portion and infrared passing portion of the other opposing body, respectively, which vibrate to periodically repeat. , there is no need for a chopper or motor to change the infrared rays incident on the infrared detector, which allows the infrared detector itself to be made smaller, and the infrared rays incident on the infrared detector are uniform and periodic. Infrared detection can be carried out with high precision because of the change in temperature.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図a及びbは夫々従来の赤外線検出機構の
側面図及び平面図、第2図は本発明実施例赤外線
検出器の断面図、第3図は本発明他の実施例赤外
線検出器の断面図、第4図は第2図及び第3図の
赤外線検出器を含む回路図、第5図及び第6図は
夫々本発明更に他の実施例赤外線検出器の断面図
である。 5…赤外線検出体、12…収納体、23…開
口、24…第1赤外線透過体、25,25s…第
1赤外線非通過体、26,26s…第2赤外線透
過体、27,27s…第2赤外線非通過体、28
及び28s…バイモルフ。
1A and 1B are a side view and a plan view of a conventional infrared detection mechanism, FIG. 2 is a sectional view of an infrared detector according to an embodiment of the present invention, and FIG. 3 is a sectional view of an infrared detector according to another embodiment of the present invention. 4 are circuit diagrams including the infrared detectors of FIGS. 2 and 3, and FIGS. 5 and 6 are sectional views of infrared detectors according to still other embodiments of the present invention, respectively. 5... Infrared detecting body, 12... Storage body, 23... Opening, 24... First infrared transmitting body, 25, 25s... First infrared non-passing body, 26, 26s... Second infrared transmitting body, 27, 27s... Second Infrared non-transmissive body, 28
and 28s...bimorph.

Claims (1)

【特許請求の範囲】[Claims] 1 入射赤外線変化量に応じて電荷を発生する赤
外線検出体、該検出体を収納する収納体、複数の
赤外線通過部及び赤外線非通過部を有し、被検出
体からの赤外線が上記検出体に入射すべく通過す
る領域に位置する一対の対向体、該一対の対向体
の赤外線通過部どうし及び赤外線非通過部どうし
が略重畳する状態と、一方の対向体の赤外線通過
部及び赤外線非通過部と他方の対向体の赤外線非
通過部及び赤外線通過部とが夫々略重畳する状態
と、を周期的に繰返せしめるべく振動する振動
体、を備えたことを特徴とする赤外線検出器。
1. It has an infrared detection body that generates a charge according to the amount of change in incident infrared rays, a storage body that houses the detection body, a plurality of infrared passing parts and infrared non-passing parts, and the infrared rays from the object to be detected reach the said detection body. A pair of opposing bodies located in a region through which the incident light should pass, a state in which the infrared passing portions and infrared non-passing portions of the pair of opposing bodies substantially overlap each other, and an infrared passing portion and an infrared non-passing portion of one of the opposing bodies. An infrared detector comprising: a vibrating body that vibrates to periodically repeat a state in which the non-infrared passing portion and the infrared passing portion of the other opposing body substantially overlap, respectively.
JP56130959A 1981-08-20 1981-08-20 infrared detector Granted JPS5832131A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP56130959A JPS5832131A (en) 1981-08-20 1981-08-20 infrared detector
US06/407,582 US4485305A (en) 1981-08-20 1982-08-12 Infrared detector with vibrating chopper
GB08223932A GB2105033B (en) 1981-08-20 1982-08-19 Infrared ray detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56130959A JPS5832131A (en) 1981-08-20 1981-08-20 infrared detector

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP59074665A Division JPS59230127A (en) 1984-04-12 1984-04-12 Infrared-ray detecting device

Publications (2)

Publication Number Publication Date
JPS5832131A JPS5832131A (en) 1983-02-25
JPS622246B2 true JPS622246B2 (en) 1987-01-19

Family

ID=15046626

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56130959A Granted JPS5832131A (en) 1981-08-20 1981-08-20 infrared detector

Country Status (1)

Country Link
JP (1) JPS5832131A (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6073615A (en) * 1983-09-30 1985-04-25 Kureha Chem Ind Co Ltd Optical path opening and closing device
JPS60144626A (en) * 1984-01-06 1985-07-31 Sanyo Electric Co Ltd Infrared ray detecting apparatus
US4745284A (en) * 1985-05-27 1988-05-17 Murata Manufacturing Co., Ltd. Infrared ray detector
JPS6336120A (en) * 1986-07-29 1988-02-16 Japan Spectroscopic Co Double luminous flux spectrophotometer
NL8901083A (en) * 1989-04-28 1990-11-16 Terpa Poultry Bv METHOD AND APPARATUS FOR DISPOSAL OF PACKED PRODUCTS THROUGH A CROSS-CONVEYOR.
JPH07132269A (en) * 1993-11-10 1995-05-23 Kanetsuu Eng Kk Automatic sorting machine and sorting method for cullet by colors
JP2011022198A (en) 2009-07-13 2011-02-03 Molex Inc Optical connector

Also Published As

Publication number Publication date
JPS5832131A (en) 1983-02-25

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