JPS62230B2 - - Google Patents
Info
- Publication number
- JPS62230B2 JPS62230B2 JP22558782A JP22558782A JPS62230B2 JP S62230 B2 JPS62230 B2 JP S62230B2 JP 22558782 A JP22558782 A JP 22558782A JP 22558782 A JP22558782 A JP 22558782A JP S62230 B2 JPS62230 B2 JP S62230B2
- Authority
- JP
- Japan
- Prior art keywords
- irradiated
- vacuum chamber
- sample
- laser
- irradiated sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 19
- 238000001704 evaporation Methods 0.000 claims description 11
- 230000008020 evaporation Effects 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 239000010408 film Substances 0.000 description 17
- 239000000463 material Substances 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 229910052863 mullite Inorganic materials 0.000 description 3
- 238000004227 thermal cracking Methods 0.000 description 3
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
この発明は、大出力レーザを用いてセラミツク
等を金属基板等に蒸着するレーザ蒸着装置に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a laser vapor deposition apparatus for vapor depositing ceramic or the like onto a metal substrate or the like using a high-output laser.
真空中に設置した被照射試料にレーザ光を集光
照射することにより被照射試料を蒸発させ、蒸発
粒子を金属基板等の上に堆積させるレーザ蒸着装
置については若干の報告例がある。しかしなが
ら、従来のレーザ蒸着装置は、いずれも平板上の
被照射試料の上面からレーザ光を照射し、レーザ
光をスキヤンニングさせるか、被照射試料を平板
の法線軸のまわりに回転させるかすることにより
照射点位置を移動させる方式のものであり、照射
パワーもCO2レーザで100W以下のものしか利用
されていなかつた。上記のような従来のレーザ蒸
着装置では蒸発粒子の基板上への堆積速度が小さ
く、膜強度もあまり強いものを期待できないた
め、その利用も光学部品用あるいは電子部品用の
薄膜作成に限られていた。 There are some reported examples of laser evaporation apparatuses that evaporate the irradiated sample by irradiating the irradiated sample with a focused laser beam placed in a vacuum, and deposit evaporated particles on a metal substrate or the like. However, conventional laser evaporation equipment either irradiates the laser beam from the top surface of the irradiated sample on a flat plate and scans the laser beam, or rotates the irradiated sample around the normal axis of the flat plate. This method moves the position of the irradiation point using a CO 2 laser, and only CO 2 lasers with an irradiation power of 100W or less have been used. With the conventional laser evaporation equipment described above, the deposition rate of evaporated particles on the substrate is slow and the film strength cannot be expected to be very strong, so its use is limited to the creation of thin films for optical or electronic components. Ta.
この発明は、上述の点にかんがみてなされたも
ので、リング状に形成された被照射試料を回転さ
せると同時にリング中心軸方向にもこのリング状
に形成された被照射試料の幅の範囲で揺動させ、
リング外周面上の接線方向からレーザ光を集光照
射させ、さらに必要に応じてリング状の被照射試
料周辺に設置したヒータによりリング状の被照射
試料全体を加熱できる構造とし、堆積速度が大き
く、しかも密着力に優れた蒸着膜を形成できるレ
ーザ蒸着装置を提供することを目的とする。以下
この発明を図面に基づいて説明する。 This invention has been made in view of the above-mentioned points, and at the same time rotates a ring-shaped irradiated sample and simultaneously rotates the ring-shaped irradiated sample within the width of the ring-shaped irradiated sample. rock it,
The laser beam is condensed and irradiated from the tangential direction on the outer peripheral surface of the ring, and if necessary, the entire ring-shaped irradiated sample can be heated by a heater installed around the ring-shaped irradiated sample, resulting in a high deposition rate. It is an object of the present invention to provide a laser vapor deposition apparatus that can form a vapor deposited film with excellent adhesion. The present invention will be explained below based on the drawings.
図面は、この発明の一実施例としてのレーザ蒸
着装置の概略構成図である。同図において、１は
レーザ発振器（図示せず）から放射される平行な
レーザ光で、このレーザ光１は平面鏡２で水平方
向に光路転換され、集光レンズ３を通過した後、
透過窓４を通して真空チヤンバ５内に導き、平面
鏡６により再び光路転換された後に、リング状に
形成された被照射試料７にリング外周面の接線方
向から照射される。集光レンズ３は、被照射試料
７上の照射点付近で焦点が結ばれるように、その
焦点距離および配置位置を選定する。また、リン
グ状の被照射試料７は任意速度でリング中心軸を
中心に回転し、さらにリング中心軸方向に被照射
試料７の厚みだけ揺動運動が可能な構造にしてお
けば、レーザ光１の照射時には試料外周全体が均
一に加熱されるので被照射試料７の熱割れを防ぐ
ことができるとともに、被照射試料７の外周全体
を一様に蒸発させることができる。レーザ光１の
照射により、被照射試料７の外周上の被照射領域
が蒸発し、蒸発粒子が基板８の方向へ飛び出し、
基板８上に蒸着し、堆積する。基板８の前面には
可動シヤツタ９を設置し、この可動シヤツタ９の
作動により基板８への蒸着時間を任意に調整でき
るようにする。なお、被照射試料７が極めて熱割
れの生じやすい材質のものである場合には、被照
射試料７の外周部近傍に予熱ヒータ１０を設け、
この予熱ヒータ１０にて被照射試料７の予熱を行
なうことにより被照射試料７の破損を防ぐことが
できる。 The drawing is a schematic configuration diagram of a laser vapor deposition apparatus as an embodiment of the present invention. In the figure, reference numeral 1 denotes a parallel laser beam emitted from a laser oscillator (not shown), and this laser beam 1 has its optical path changed in the horizontal direction by a plane mirror 2, and after passing through a condensing lens 3,
The light is led into the vacuum chamber 5 through the transmission window 4, and after the optical path is changed again by the plane mirror 6, the ring-shaped sample 7 to be irradiated is irradiated from the tangential direction of the outer peripheral surface of the ring. The focal length and arrangement position of the condenser lens 3 are selected so that the focus is formed near the irradiation point on the sample 7 to be irradiated. In addition, if the ring-shaped irradiated sample 7 is structured to rotate around the ring center axis at an arbitrary speed and to be able to oscillate in the direction of the ring center axis by the thickness of the irradiated sample 7, the laser beam 1 During the irradiation, the entire outer periphery of the sample is heated uniformly, so thermal cracking of the irradiated sample 7 can be prevented, and the entire outer periphery of the irradiated sample 7 can be uniformly evaporated. By irradiating the laser beam 1, the irradiated area on the outer circumference of the irradiated sample 7 is evaporated, and evaporated particles fly out toward the substrate 8.
It is evaporated and deposited on the substrate 8. A movable shutter 9 is installed in front of the substrate 8, and by operating the movable shutter 9, the deposition time on the substrate 8 can be arbitrarily adjusted. Note that if the irradiated sample 7 is made of a material that is extremely susceptible to thermal cracking, a preheater 10 is provided near the outer periphery of the irradiated sample 7.
By preheating the irradiated sample 7 with the preheater 10, damage to the irradiated sample 7 can be prevented.
以上がこの発明の一実施例をなすレーザ蒸着装
置の構成およびその動作であるが、次に上記実施
例における具体例を以下に述べる。 The configuration and operation of the laser evaporation apparatus which constitutes one embodiment of the present invention have been described above. Next, a specific example of the above embodiment will be described below.
真空チヤンバ５を１×10-4Torr以下の真空度
に排気しておき、基板８としてMo、Cu、Fe、
Ti、Ｗなどの金属を用いて、また、リング状に
形成された被照射試料７として、アルミナ、ムラ
イト、六方晶窒化ほう素、窒化珪素、炭化珪素、
サイアロンなどのセラミツクスを用いた。リング
状に形成された被照射試料７を、数rpm〜30rpm
程度で回転させながら、予熱ヒータ１０により数
100℃程度に予熱し、基板８と被照射試料７との
距離を50〜100mm程度として数100WのCWCO2レ
ーザ光１を被照射試料７の外周面に接線方向から
照射した場合、基板８上への蒸発粒子の堆積速度
は、被照射試料７の材質によつても異なるが、ほ
ぼ１〜0.1μm/min程度であり、他の蒸着法と比
較し同等もしくはそれ以上の高能率を示した。ま
た、蒸着膜は緻密で硬く、Moの基板８上の蒸着
膜のマイクロヴイツカースの硬さは、アルミナ膜
が1500Kg/mm2以上、ムライト膜が1000Kg/mm2以上を
示した。特に、非常に軟質な六方晶窒化ほう素を
被照射試料７とした場合、蒸着膜の厚さが１μｍ
程度の薄膜でも1500Kg/mm2以上の高硬度値が測定
されており、母材よりも高強度の膜形成が可能な
場合もあることが確認された。因みに、電子ビー
ム蒸着法やイオンプレーテイング法でMoの基板
８上に蒸着したアルミナやムライト膜の硬さは本
法による場合の1/2〜1/10程度であり、本蒸着法
は硬質膜形成法とし極めて優れている。 The vacuum chamber 5 is evacuated to a vacuum level of 1×10 -4 Torr or less, and the substrate 8 is made of Mo, Cu, Fe,
Alumina, mullite, hexagonal boron nitride, silicon nitride, silicon carbide,
Ceramics such as Sialon were used. The ring-shaped irradiated sample 7 is heated at several rpm to 30 rpm.
While rotating at a certain speed, the preheater 10
When the substrate 8 is preheated to about 100°C, the distance between the substrate 8 and the sample 7 to be irradiated is set to about 50 to 100 mm, and the CWCO 2 laser beam 1 of several hundred W is irradiated tangentially to the outer peripheral surface of the sample 7 to be irradiated, the surface of the substrate 8 is Although the deposition rate of evaporated particles varies depending on the material of the irradiated sample 7, it is approximately 1 to 0.1 μm/min, showing high efficiency equivalent to or higher than other vapor deposition methods. . Further, the deposited film was dense and hard, and the microvitsukas hardness of the deposited film on the Mo substrate 8 was 1500 Kg/mm 2 or more for the alumina film and 1000 Kg/mm 2 or more for the mullite film. In particular, when the irradiated sample 7 is very soft hexagonal boron nitride, the thickness of the deposited film is 1 μm.
High hardness values of 1,500 Kg/mm 2 or more have been measured even for films as thin as 1,500 kg/mm 2 , confirming that it is possible to form films with higher strength than the base material in some cases. Incidentally, the hardness of the alumina or mullite film deposited on the Mo substrate 8 by electron beam evaporation or ion plating is about 1/2 to 1/10 of that by this method, and this evaporation method does not produce hard films. This is an extremely superior forming method.
上記のように構成されたこの発明の一実施例を
なすレーザ蒸着装置を用いて蒸着膜を作成すれ
ば、基板８との密着力の極めて高く、また、繰り
返しの熱履歴に対しても膜剥離を生じない耐熱性
の良い蒸着膜が得られる。さらに大出力CO2レー
ザ用の吸収体としても利用が可能で、例えば
Si3N4膜をMoの基板８に形成させたものは600W/
cm2以上の照射パワー密度にも十分耐えることがで
きることが確認された。従つて、このレーザ蒸着
装置を用いれば工具をはじめ、耐摩耗、耐熱、耐
光性材料の作成に極めて優れた効果を発揮するこ
とが期待される。 If a vapor deposited film is created using the laser vapor deposition apparatus configured as described above, which is an embodiment of the present invention, the adhesion to the substrate 8 will be extremely high, and the film will not peel off even with repeated thermal history. A vapor-deposited film with good heat resistance that does not cause Furthermore, it can also be used as an absorber for high-output CO 2 lasers, such as
The one in which the Si 3 N 4 film is formed on the Mo substrate 8 has a power output of 600 W/
It was confirmed that it could sufficiently withstand irradiation power densities of cm 2 or higher. Therefore, the use of this laser vapor deposition apparatus is expected to be extremely effective in producing materials that are wear-resistant, heat-resistant, and light-resistant, including tools.
なお、この発明は基板８および被照射試料７と
して金属、セラミツクスのいずれをも用いること
が可能である。また、複数本のレーザビーム光を
導入することにより多種材料の同時コーテングや
積層膜の作成も可能であり、新しい機能材料など
の膜形成にも利用できる。 Incidentally, in the present invention, it is possible to use either metal or ceramics as the substrate 8 and the sample 7 to be irradiated. Furthermore, by introducing multiple laser beams, it is possible to simultaneously coat various materials or create a laminated film, and it can also be used to form films of new functional materials.
以上説明したようにこの発明に係るレーザ蒸着
装置は、真空チヤンバと、この真空チヤンバ中で
軸を中心に回転するリング状に形成された被照射
試料と、真空チヤンバ内で被照射試料の照射領域
から出射する蒸発粒子が蒸着される位置に配設さ
れた基板と、レーザ光を真空チヤンバ中の被照射
試料の照射領域に導く光学系とから構成したの
で、このレーザ蒸着装置を用いれば、従来のレー
ザ蒸着装置に比較し、緻密で硬くさらに基板との
密着性のよいセラミツクス膜を高能率に形成する
ことができ、また、被照射試料の周辺に予熱ヒー
タを設けたので、被照射試料が極めて熱割れの生
じやすい材質のものである場合にも被照射試料の
破損を防ぐことができる等の極めて優れた効果を
有する。 As explained above, the laser evaporation apparatus according to the present invention includes a vacuum chamber, an irradiated sample formed in a ring shape that rotates around an axis in the vacuum chamber, and an irradiation area of the irradiated sample within the vacuum chamber. This laser evaporation system consists of a substrate placed at a position where evaporated particles emitted from the evaporator are deposited, and an optical system that guides the laser beam to the irradiation area of the irradiated sample in the vacuum chamber. Compared to the laser evaporation equipment of It has extremely excellent effects such as being able to prevent damage to the irradiated sample even when the material is extremely susceptible to thermal cracking.
図面はこの発明の一実施例を示すレーザ蒸着装
置の概略構成図である。
図中、１はレーザ光、２は平面鏡、３は集光レ
ンズ、４は透過窓、５は真空チヤンバ、６は平面
鏡、７は被照射試料、８は基板、９はシヤツタ、
１０は予熱ヒータである。
The drawing is a schematic diagram of a laser evaporation apparatus showing an embodiment of the present invention. In the figure, 1 is a laser beam, 2 is a plane mirror, 3 is a condenser lens, 4 is a transmission window, 5 is a vacuum chamber, 6 is a plane mirror, 7 is a sample to be irradiated, 8 is a substrate, 9 is a shutter,
10 is a preheating heater.
Claims (1)
中心に回転するリング状に形成された被照射試料
と、前記真空チヤンバ内で前記被照射試料の照射
領域から出射する蒸発粒子が蒸着される位置に配
設された基板と、レーザ発振器からのレーザ光を
収束させて前記真空チヤンバ中の前記被照射試料
外周面の接線方向から照射するための光学系とか
らなることを特徴とするレーザ蒸着装置。 ２ 真空チヤンバと、この真空チヤンバ中で軸を
中心に回転するリング状に形成された被照射試料
と、前記真空チヤンバ内で前記被照射試料の照射
領域から出射する蒸発粒子が蒸着される位置に配
設された基板と、前記リング状に形成された被照
射試料の周辺に設けた予熱ヒータと、レーザ発振
器からのレーザ光を収束させて前記真空チヤンバ
中の前記被照射試料外周面の接線方向から照射す
るための光学系とからなることを特徴とするレー
ザ蒸着装置。[Scope of Claims] 1. A vacuum chamber, a ring-shaped irradiated sample rotating around an axis in the vacuum chamber, and evaporated particles emitted from an irradiation area of the irradiated sample within the vacuum chamber. and an optical system for converging laser light from a laser oscillator and irradiating it from the tangential direction of the outer peripheral surface of the irradiated sample in the vacuum chamber. Laser deposition equipment. 2. A vacuum chamber, an irradiated sample formed in a ring shape rotating around an axis in the vacuum chamber, and a position within the vacuum chamber where evaporation particles emitted from the irradiation area of the irradiated sample are deposited. A preheating heater provided around the arranged substrate, the ring-shaped sample to be irradiated, and a laser beam from a laser oscillator is focused in the tangential direction of the outer peripheral surface of the sample to be irradiated in the vacuum chamber. 1. A laser evaporation device characterized by comprising an optical system for irradiating light from a source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22558782A JPS59116373A (en) | 1982-12-22 | 1982-12-22 | Vapor deposition device by laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22558782A JPS59116373A (en) | 1982-12-22 | 1982-12-22 | Vapor deposition device by laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59116373A JPS59116373A (en) | 1984-07-05 |
| JPS62230B2 true JPS62230B2 (en) | 1987-01-06 |
Family
ID=16831647
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22558782A Granted JPS59116373A (en) | 1982-12-22 | 1982-12-22 | Vapor deposition device by laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59116373A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02146496A (en) * | 1988-11-29 | 1990-06-05 | Toshiba Corp | Crucible for melting metal |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62170474A (en) * | 1986-01-23 | 1987-07-27 | Agency Of Ind Science & Technol | Laser vapor deposition device |
| US4816293A (en) * | 1986-03-27 | 1989-03-28 | Mitsubishi Denki Kabushiki Kaisha | Process for coating a workpiece with a ceramic material |
| JPS63137162A (en) * | 1986-11-28 | 1988-06-09 | Mitsubishi Electric Corp | Laser deposition multilayer film forming equipment |
| JP2650910B2 (en) * | 1987-04-22 | 1997-09-10 | 株式会社日立製作所 | Method of forming oxide superconductor thin film |
| JPH01172216A (en) * | 1987-12-26 | 1989-07-07 | Tokai Univ | Method for manufacturing superconducting materials |
| EP0406871B1 (en) * | 1989-07-06 | 1996-09-25 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Laser deposition method and apparatus |
| JPH06192821A (en) * | 1991-03-26 | 1994-07-12 | Toyo Eng Corp | Laser PVD device |
| FR2689315A1 (en) * | 1992-03-27 | 1993-10-01 | Alsthom Cge Alcatel | Heat sink substrate mfr. for power electronics - by ceramic laser ablation onto metal plate |
| FI126769B (en) | 2014-12-23 | 2017-05-15 | Picodeon Ltd Oy | Lighthouse type scanner with a rotating mirror and a circular target |
-
1982
- 1982-12-22 JP JP22558782A patent/JPS59116373A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02146496A (en) * | 1988-11-29 | 1990-06-05 | Toshiba Corp | Crucible for melting metal |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59116373A (en) | 1984-07-05 |
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