JPS62246788A - Information recording medium - Google Patents
Information recording mediumInfo
- Publication number
- JPS62246788A JPS62246788A JP61089241A JP8924186A JPS62246788A JP S62246788 A JPS62246788 A JP S62246788A JP 61089241 A JP61089241 A JP 61089241A JP 8924186 A JP8924186 A JP 8924186A JP S62246788 A JPS62246788 A JP S62246788A
- Authority
- JP
- Japan
- Prior art keywords
- information recording
- recording medium
- recording layer
- substrate
- antimony
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000000203 mixture Substances 0.000 claims abstract description 17
- 229910000927 Ge alloy Inorganic materials 0.000 claims abstract description 11
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 11
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical group [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 11
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 11
- FZTQHRNBWQZFMK-UHFFFAOYSA-N [Ge].[Sn].[Sb] Chemical compound [Ge].[Sn].[Sb] FZTQHRNBWQZFMK-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000010409 thin film Substances 0.000 claims abstract description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 10
- 239000010408 film Substances 0.000 abstract description 19
- 230000035945 sensitivity Effects 0.000 abstract description 7
- 238000004544 sputter deposition Methods 0.000 abstract description 4
- 238000013329 compounding Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 7
- 230000007704 transition Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 150000004770 chalcogenides Chemical class 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052714 tellurium Inorganic materials 0.000 description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000004125 X-ray microanalysis Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910017518 Cu Zn Inorganic materials 0.000 description 1
- 229910017752 Cu-Zn Inorganic materials 0.000 description 1
- 229910017943 Cu—Zn Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 206010027476 Metastases Diseases 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910003069 TeO2 Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000009401 metastasis Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
- B41M5/26—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は情報記録媒体に関する。[Detailed description of the invention] (Industrial application field) The present invention relates to an information recording medium.
（従来の技術）
各種の情報信号を高い記録密度で記録することについて
の要望が高まるのにつれて、近年になって色々な構成原
理や動作原理に基づいて作られた情報記録媒体を用いて
情報信号の高密度記録再生が行われるようになったこと
は周知のとおりであり、各種の技術分野における高密度
記録再生の要求に応じるために、情報記録媒体の記録層
に情報信号によって強度変調された記録用ビームを照射
することにより、情報記録媒体における記録層に情報信
号に応じた物理変化あるいは化学変化を生じさせて情報
信号の記録が行われるようにした情報記録媒体について
も研究が行われるようになり。(Prior Art) As the demand for recording various information signals at high recording densities has increased, in recent years, information recording media created based on various structural and operating principles have been used to record information signals at high recording densities. It is well known that high-density recording and reproduction of information has come to be carried out, and in order to meet the demands for high-density recording and reproduction in various technical fields, the recording layer of an information recording medium is equipped with an information signal that is intensity-modulated. Research is also being conducted on information recording media in which information signals are recorded by causing physical or chemical changes in the recording layer of the information recording medium in accordance with the information signal by irradiating it with a recording beam. become.
光学的及びまたは電気的特性（光の透過率９反射率。Optical and or electrical properties (light transmittance 9 reflectance.
吸収率、電気抵抗、その他の特性）の異なる２つ以上の
安定な構造状態を有しており、外部から光学的、電気的
、熱的エネルギの印加によって、前記した安定な構造状
態間での転移を起こす材料を。It has two or more stable structural states with different absorption rates, electrical resistance, and other properties, and can be changed between the stable structural states by applying external optical, electrical, or thermal energy. materials that cause metastasis.
基板上に蒸着法あるいはスパッタリング法を適用して成
膜して記録層に用いるようにした相変化型に属する情報
記録媒体についても、例えば１回だけユーザが追加して
記録できる光ディスク（追記型光ディスク）や消去可能
な光ディスクなどとして、例えばオフィス用ファイルメ
モリ、その他の用途での実用化のために盛んに研究開発
が行われている。Regarding information recording media belonging to the phase change type, in which a film is formed on a substrate by applying a vapor deposition method or a sputtering method and used as a recording layer, for example, an optical disk (write-once optical disk) that can be added and recorded only once by the user is used. ), erasable optical disks, etc., and research and development are actively being carried out to put them into practical use, for example, in office file memory and other uses.
相変化型に属する情報記録媒体は、既記録情報の消去の
可能性もあるという点で注目されていて、現在までに相
変化型の情報記録媒体としては、それの記録層に使用さ
れている記録材料として、それの構造が非晶質と結晶間
で転移するカルコゲナイド系の物質（ゲルマニウム、テ
ルル、アンチモン、シリコン、砒素、ビスマス、インジ
ュウム、ガリウム、タリウム、セレン、硫黄の色々な組
合わせからなる組成物）や、低級酸化物（例えば、Ｔｏ
とＴ ａ Ｏ２の混合物等）を用いたものが提案されて
おり、また、それの構造が結晶と結晶間で転移する合金
系（Ｉｎ−８ｓ、Ｃｕ−Ｚｎ）の無機物、あるいは銅フ
タロシアンなどの有機物が知られている。Information recording media belonging to the phase change type have attracted attention because of the possibility of erasing previously recorded information, and to date, phase change type information recording media have been used for their recording layers. As a recording material, chalcogenide materials whose structure transitions between amorphous and crystalline (consisting of various combinations of germanium, tellurium, antimony, silicon, arsenic, bismuth, indium, gallium, thallium, selenium, and sulfur) composition) and lower oxides (e.g. To
In addition, alloy-based inorganic materials (In-8s, Cu-Zn) whose structure transitions between crystals, or copper phthalocyanate, etc. have been proposed. organic matter is known.
（発明が解決しようとする問題点）
ところが、カルコゲナイド系の組成物の薄膜からなる記
録層を有する情報記録媒体としては、従来、テルルを主
成分として記録感度やＣ／Ｎを大きくするようにしてい
たが、テルル単体の成膜で、非晶質を得ることは困難で
あり、本質的に構造緩和による結晶化のおそ紅が避けら
れないという問題点があり、また、低級酸化物（例えば
、ＴｅとＴ ｅ Ｏ２どの混合組成物等）の薄膜からな
る記録層が用いられている情報記録媒体では、最適記録
強度（記録層に相変化を起こさせることができる強度範
囲内のレーザ光強度であって、その強度のレーザ光が照
射された部分の記録層からの再生信号中における２次高
調波歪が極小になされる如きレーザ光強度）及び／また
は信号対雑音比が記録層を構成している物質の組成比に
よって大きく変化するために、所定の特性を備えている
光ディスクの大量生産を簡単に行なうことができないと
いう点が問題になった他に、記録層の構成に使用される
記録材料が毒性を有していたり、記録層の保存性（耐候
性）が不良であったりする点などが問題になるので１種
々の元素（例えば、Ａｓ、ＳｉｗＧｓ）を添加して特性
の改善を図かることが必要とされるが、多成分系での複
雑な組成配合、固溶反応、成膜、急冷等の製造過程にお
いて、均質な材料を大量に得ることが困難であり、また
、テルルの低級酸化物の例も報告されているが、極めて
耐候性に劣るという問題点が指摘されている。(Problems to be Solved by the Invention) However, conventionally, information recording media having a recording layer made of a thin film of a chalcogenide composition have been made of tellurium as a main component to increase the recording sensitivity and C/N. However, it is difficult to obtain an amorphous film by forming a film of tellurium alone, and there is a problem that the risk of crystallization due to structural relaxation is unavoidable. In an information recording medium using a recording layer made of a thin film of a mixed composition of Te and TeO2, etc., the optimum recording intensity (laser light intensity within the intensity range that can cause a phase change in the recording layer) is required. The laser beam intensity) and/or signal-to-noise ratio constitute the recording layer such that the second harmonic distortion in the reproduced signal from the recording layer in the portion irradiated with the laser beam of that intensity is minimized. In addition to the problem of not being able to easily mass-produce optical discs with predetermined characteristics because the composition ratio of the materials used in the recording layer varies greatly, Problems include the toxicity of the material and the poor storage stability (weather resistance) of the recording layer, so various elements (e.g., As, SiwGs) are added to improve the properties. However, it is difficult to obtain a large amount of homogeneous material during manufacturing processes such as complex composition blending in multicomponent systems, solid solution reactions, film formation, and rapid cooling. Examples of lower oxides have also been reported, but it has been pointed out that they have extremely poor weather resistance.
さらに、合金系の結晶間の転移を利用するものはエネル
ギの吸収効率が悪く、記録感度が低いという欠点があり
、さらにまた、有機系の記録材料は、良好な特性のもの
が得られていない。Furthermore, materials that utilize intercrystalline transitions in alloys have the drawbacks of poor energy absorption efficiency and low recording sensitivity.Furthermore, organic recording materials have not had good characteristics. .
（問題点を解決するための手段）
本発明は、錫の含有量Ｘが０．２ （ｘ （０，４の範
囲であり、また、ゲルマニウムの含有量ｙが０．０５＜
ｙ ＜ ０．１の範囲であって、残部がアンチモンであ
るような組成を有するアンチモン・錫・ゲルマニウム合
金 ５ｂ（１−ｘ−ｙ）Ｓｎ（ｘ）Ｇｏ（ｙ）の薄膜を
基板上に記録層として設けた情報記録媒体（光ディスク
）、すなわち、高感度、高安定性を有するとともに、組
成範囲が比較的に広く、成膜条件が緩やかで製造も容易
な情報記録媒体を提供するものである。(Means for Solving the Problems) In the present invention, the tin content X is in the range of 0.2 (
A thin film of antimony-tin-germanium alloy 5b(1-x-y)Sn(x)Go(y) having a composition such that y < 0.1 and the remainder is antimony is recorded on a substrate. The present invention provides an information recording medium (optical disk) provided as a layer, that is, an information recording medium that has high sensitivity and high stability, has a relatively wide composition range, has mild film formation conditions, and is easy to manufacture. .
（実施例）
以下、添付図面を参照して本発明の情報記録媒体の具体
的な内容を詳細に説明する。(Example) Hereinafter, specific contents of the information recording medium of the present invention will be explained in detail with reference to the accompanying drawings.
第１図は本発明の情報記録媒体の一部の縦断側面図であ
り、この第１図において１は基板、２は記録層である。FIG. 1 is a longitudinal sectional side view of a part of the information recording medium of the present invention, and in FIG. 1, 1 is a substrate and 2 is a recording layer.
そして、本発明の情報記録媒体は錫の含有量Ｘが０．２
（ｘ （０，４の範囲であり、また、ゲルマニウムの
含有量ｙが０．０５ （ｙ （０，１の範囲であって、
残部がアンチモンであるような組成を有するアンチモン
・錫・ゲルマニウム合金５ｂ（１−ｘ−ｙ）Ｓｎ（ｘ）
Ｇｅ（ｙ）の薄膜を基板１上に記録層２として設けた情
報記録媒体であって、前記した本発明の情報記録媒体は
、適当な基板１１例えば、アクリル板またはガラス板で
構成した基板１上に所定の組成比及び膜厚例えば１００
０オングストロームの膜厚を有するアンチモン・錫・ゲ
ルマニウム合金の薄膜からなる記録層２は、例えばＩ
Ｘ １０−”Ｔｏｒｒのアルゴンガスの雰囲気中で高周
波スパッタリング法を適用することによって容易−に作
ることができる（高周波スパッタリング法として、３元
独立同時スパッタリング法を適用してアン汗モン・錫・
ゲルマニウム合金薄膜による記録層を形成させても、あ
るいはアンチモン・匍・ゲルマニウム合金ターゲットを
用いるスパッタリング法を適用してアンチモン・錫・ゲ
ルマニウム合金＊ｇによる記録層を形成させてもよい）
。The information recording medium of the present invention has a tin content X of 0.2.
(x (in the range of 0.4, and the germanium content y is in the range of 0.05 (y (0.1),
Antimony-tin-germanium alloy 5b(1-x-y)Sn(x) having a composition such that the remainder is antimony
The information recording medium of the present invention is an information recording medium in which a thin film of Ge(y) is provided as a recording layer 2 on a substrate 1, and the information recording medium of the present invention has a substrate 1 made of a suitable substrate 11, for example, an acrylic plate or a glass plate. A predetermined composition ratio and film thickness, for example, 100
The recording layer 2 is made of a thin film of antimony-tin-germanium alloy having a film thickness of 0 angstroms, for example, I
It can be easily produced by applying a high frequency sputtering method in an argon gas atmosphere of
A recording layer made of a germanium alloy thin film may be formed, or a recording layer made of an antimony-tin-germanium alloy *g may be formed by applying a sputtering method using an antimony-tin-germanium alloy target)
.
基板１に記録Ｎｊ２を形成させる際には、基板を冷却す
るような必要はなく、数十ワットの高周波電力で約１０
００オングストロームの膜厚の記録層２を数分間で基板
１上に付着形成させることができる。成膜直後における
記録層２は半透明の非晶質の状態のものであり、これに
波長が７８００オングストロームのレーザ光のスポット
を照射すると、照射部は短時間で結晶に転移して光の透
過率が低下し光の反射率が上昇する。When forming the recording Nj2 on the substrate 1, there is no need to cool the substrate, and approximately 10 watts of high frequency power is used to form the recording Nj2 on the substrate 1.
A recording layer 2 having a thickness of 0.00 angstroms can be deposited on the substrate 1 in a few minutes. Immediately after film formation, the recording layer 2 is in a translucent amorphous state, and when it is irradiated with a spot of laser light with a wavelength of 7800 angstroms, the irradiated area transforms into a crystal in a short time, allowing light to pass through. The reflectance of light decreases and the reflectance of light increases.
基板１としてプリグループ付きの円盤を用い、それを毎
分１８００回転させながら、波長が７８００オングスト
ロームのレーザ光のスポットを断続して照射すると、円
盤の半径６０ｍｍの付近で３ミリワット〜３．５ミリワ
ッ１−程度のパワーのレーザ光で記録Ｍ２には相変化に
よる記録が行われることが確められたが、記録層２には
膜の変形は生じなかった。Using a disk with a pre-group as the substrate 1, when rotating it at 1800 revolutions per minute and intermittently irradiating it with a spot of laser light with a wavelength of 7800 angstroms, a power output of 3 milliwatts to 3.5 milliwatts will be generated near the radius of 60 mm of the disk. Although it was confirmed that the recording M2 was recorded by a phase change using a laser beam having a power of about 1-, no film deformation occurred in the recording layer 2.
また、レーザ光をＩ Ｍ Ｈｚの矩形波で強度変調して
記録層２に記録した場合には、Ｃ／Ｎとして略々５１ｄ
Ｂが得られ、また、２次高調波歪は基本波に対して一２
５ｄＢ程度であった。In addition, when the laser beam is intensity-modulated with a rectangular wave of I MHz and recorded on the recording layer 2, the C/N is approximately 51 d.
B is obtained, and the second harmonic distortion is -2 with respect to the fundamental wave.
It was about 5 dB.
記録層２の膜組成は、膜厚モニタ上ではアンチモンが６
５原子％、錫が２９原子％、ゲルマニウムが６原子％で
あり、また、Ｘ線マイクロアナリシスではアンチモンが
６６原子％、錫が３１原子％。The film composition of recording layer 2 is 6 antimony on the film thickness monitor.
5 atom %, tin 29 atom %, germanium 6 atom %, and X-ray microanalysis shows that antimony is 66 atom % and tin is 31 atom %.
ゲルマニウムが３原子％であった。また、別の試料にお
ける記録層２の膜組成は、膜厚モニタ上ではアンチモン
が５４ｍ子％、錫が３６原子％、ゲルマニウムが１０原
子％であり、また、Ｘ線マイクロアナリシスではアンチ
モンが５７原子％、錫が３８原子％、ゲルマニウムが５
原子％であった。Germanium was 3 atomic %. In addition, the film composition of the recording layer 2 in another sample was found to be 54 m % antimony, 36 atomic % tin, and 10 atomic % germanium on the film thickness monitor, and 57 atomic % antimony according to X-ray microanalysis. %, tin 38 atomic %, germanium 5
It was atomic%.
このように本発明の情報記録媒体では、錫の含有量Ｘが
０．２ （ｘ （０，４の範囲であり、また、ゲルマニ
ウムの含有量ｙが０．０５ （ｙ ＜ ０．１の範囲で
あって、残部がアンチモンであるような組成を有するア
ンチモン・錫・ゲルマニウム合金８ｂ（１−ｘ−ｙ）Ｓ
ｎ（ｘ）Ｇｅ（ｙ）の薄膜が基板上に記録層として用い
らるので、組成範囲が既述したカルコゲナイド系の非晶
質膜に比較して広く、成膜条件が緩いのである。Thus, in the information recording medium of the present invention, the tin content X is in the range of 0.2 (x (0.4), and the germanium content y is in the range of 0.05 (y < 0.1) An antimony-tin-germanium alloy 8b(1-x-y)S having a composition such that the remainder is antimony.
Since a thin film of n(x)Ge(y) is used as a recording layer on the substrate, the composition range is wider than that of the chalcogenide-based amorphous film mentioned above, and the film formation conditions are less strict.
ゲルマニウムの添加は、非晶質状態をより一層安定化さ
せ、また熱伝導をやや抑えて記録のパターンを整えて２
次高調波歪を低減させるように作用する。また、錫の添
加は記録結晶部のグレインノイズを低減させてＣ／Ｎを
高める作用をする。The addition of germanium further stabilizes the amorphous state, slightly suppresses heat conduction, and improves the recording pattern.
It acts to reduce harmonic distortion. Further, the addition of tin has the effect of reducing grain noise in the recording crystal portion and increasing the C/N.
ガラス基板に成膜したものを窒素雰囲気中で加熱しなが
ら、波長が６３２８オングストロームのレーザ光でモニ
ターして本発明の情報記録媒体の記録層２における光の
反射率が変化する転移点を調べたところ、第２図に示さ
れているように、転移点は約２００℃というように記録
感度の割には充分に高く、アクリル基板に同様に成膜し
たものを保護膜なしの状態で６０℃で湿度が９０％の恒
温槽中に置して一週間を経過しても外観上で何の変化も
認められず（剥離、溶解、ピンホールなどを生ぜず）、
良好な反射面を示している状態となっており、情報記録
媒体の記録層としては充分な耐候性を有しているものと
認められた。The film formed on the glass substrate was heated in a nitrogen atmosphere and monitored with a laser beam having a wavelength of 6328 angstroms to examine the transition point at which the reflectance of light changes in the recording layer 2 of the information recording medium of the present invention. However, as shown in Figure 2, the transition point is approximately 200°C, which is sufficiently high considering the recording sensitivity, and a film formed in the same way on an acrylic substrate was heated at 60°C without a protective film. Even after a week had passed since the product was placed in a constant temperature bath with a humidity of 90%, no changes were observed in its appearance (no peeling, dissolution, pinholes, etc.).
It was in a state showing a good reflective surface and was recognized to have sufficient weather resistance as a recording layer of an information recording medium.
（効果）
以上、詳細に説明したところから明らかなように本発明
の情報記録媒体は、錫の含有量Ｘが０．２ （ｘ （Ｑ
、４の範囲であり、また、ゲルマニウムの含有量ｙがｏ
、ｏｓ （ｙ ＜ ｏ、ｔの範囲であって。(Effects) As is clear from the detailed explanation above, the information recording medium of the present invention has a tin content X of 0.2 (x (Q
, 4, and the germanium content y is o
, os (y < o, in the range of t.
残部がアンチモンであるような組成を有するアンチモン
・錫・ゲルマニウム合金
５ｂ（１−ｘ−ｙ）Ｓｎ（ｘ）Ｇｅ（ｙ）の薄膜を基板
上に記録層として設けた情報記録媒体情報記録媒体であ
って、この本発明の情報記録媒体は高い感度を有し、ま
た、高いＣ／Ｎを有しているとともに、耐候性が良好で
あり、安価で大量生産にも適する等の多くの利点を有す
るのであり、この本発明の情報記゛録媒体では従来の情
報記録媒体における諸欠点は良好に解決されるのである
二An information recording medium in which a thin film of antimony-tin-germanium alloy 5b(1-x-y)Sn(x)Ge(y) having a composition in which the remainder is antimony is provided as a recording layer on a substrate. Therefore, the information recording medium of the present invention has many advantages such as high sensitivity, high C/N, good weather resistance, low cost, and suitability for mass production. The information recording medium of the present invention satisfactorily solves the various drawbacks of conventional information recording media.
第１図は本発明の情報記録媒体の一部の縦断側面図、第
２図は特性曲線図である。
１・・・基板、２・・・記録層、
特許出願人 日本ビクター株式会社
晃 ２ 図FIG. 1 is a longitudinal sectional side view of a part of the information recording medium of the present invention, and FIG. 2 is a characteristic curve diagram. 1...Substrate, 2...Recording layer, Patent applicant: Akira Japan Victor Co., Ltd. 2 Figure
Claims (1)
、ゲルマニウムの含有量ｙが０．０５＜ｙ＜０．１の範
囲であって、残部がアンチモンであるような組成を有す
るアンチモン・錫・ゲルマニウム合金 Ｓｂ（１−ｘ−ｙ）Ｓｎ（ｘ）Ｇｅ（ｙ） の薄膜を基板上に記録層として設けた情報記録媒体[Claims] The tin content x is in the range of 0.2<x<0.4, the germanium content y is in the range of 0.05<y<0.1, and the remainder An information recording medium in which a thin film of an antimony-tin-germanium alloy Sb(1-x-y)Sn(x)Ge(y) having a composition such that is antimony is provided as a recording layer on a substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61089241A JPS62246788A (en) | 1986-04-18 | 1986-04-18 | Information recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61089241A JPS62246788A (en) | 1986-04-18 | 1986-04-18 | Information recording medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62246788A true JPS62246788A (en) | 1987-10-27 |
Family
ID=13965248
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61089241A Pending JPS62246788A (en) | 1986-04-18 | 1986-04-18 | Information recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62246788A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4981772A (en) * | 1988-08-09 | 1991-01-01 | Eastman Kodak Company | Optical recording materials comprising antimony-tin alloys including a third element |
| US5077181A (en) * | 1988-08-09 | 1991-12-31 | Eastman Kodak Company | Optical recording materials comprising antimony-tin alloys including a third element |
| US5273861A (en) * | 1987-12-04 | 1993-12-28 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium, method of making an optical information recording medium and method of recording/reproducing optical information |
| EP1369860A3 (en) * | 2002-05-31 | 2005-07-27 | TDK Corporation | Optical recording medium |
| US7081289B2 (en) | 2003-03-24 | 2006-07-25 | Mitsubishi Kagaku Media Co., Ltd. | Phase-change recording material and information recording medium |
| US7083894B2 (en) | 2002-06-14 | 2006-08-01 | Tdk Corporation | Optical recording medium |
| US7105217B2 (en) | 2003-04-30 | 2006-09-12 | Mitsubishi Chemical Corporation | Phase-change recording material and information recording medium |
| US7166415B2 (en) | 2002-03-05 | 2007-01-23 | Mitsubishi Kagaku Media Co., Ltd. | Phase-change recording material used for information recording medium and information recording medium employing it |
| JP2007045106A (en) * | 2005-08-12 | 2007-02-22 | Ricoh Co Ltd | Two-layer phase change information recording medium |
| US7313070B2 (en) | 2002-02-13 | 2007-12-25 | Mitsubishi Kagaku Media Co., Ltd. | Rewritable optical recording medium and optical recording method |
-
1986
- 1986-04-18 JP JP61089241A patent/JPS62246788A/en active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5273861A (en) * | 1987-12-04 | 1993-12-28 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium, method of making an optical information recording medium and method of recording/reproducing optical information |
| US5077181A (en) * | 1988-08-09 | 1991-12-31 | Eastman Kodak Company | Optical recording materials comprising antimony-tin alloys including a third element |
| US4981772A (en) * | 1988-08-09 | 1991-01-01 | Eastman Kodak Company | Optical recording materials comprising antimony-tin alloys including a third element |
| US7313070B2 (en) | 2002-02-13 | 2007-12-25 | Mitsubishi Kagaku Media Co., Ltd. | Rewritable optical recording medium and optical recording method |
| US7858167B2 (en) | 2002-02-13 | 2010-12-28 | Mitsubishi Kagaku Media Co., Ltd. | Rewritable optical recording medium and optical recording method |
| US7609603B2 (en) | 2002-02-13 | 2009-10-27 | Mitsubishi Kagaku Media Co., Ltd. | Rewritable optical recording medium and optical recording method |
| JP2009083501A (en) * | 2002-02-13 | 2009-04-23 | Mitsubishi Kagaku Media Co Ltd | Rewritable optical recording medium |
| US7659049B2 (en) | 2002-03-05 | 2010-02-09 | Mitsubishi Kagaku Media Co., Ltd. | Phase-change recording material used for information recording medium and information recording medium employing it |
| US7166415B2 (en) | 2002-03-05 | 2007-01-23 | Mitsubishi Kagaku Media Co., Ltd. | Phase-change recording material used for information recording medium and information recording medium employing it |
| EP1369860A3 (en) * | 2002-05-31 | 2005-07-27 | TDK Corporation | Optical recording medium |
| US7083894B2 (en) | 2002-06-14 | 2006-08-01 | Tdk Corporation | Optical recording medium |
| US7081289B2 (en) | 2003-03-24 | 2006-07-25 | Mitsubishi Kagaku Media Co., Ltd. | Phase-change recording material and information recording medium |
| US7105217B2 (en) | 2003-04-30 | 2006-09-12 | Mitsubishi Chemical Corporation | Phase-change recording material and information recording medium |
| JP2007045106A (en) * | 2005-08-12 | 2007-02-22 | Ricoh Co Ltd | Two-layer phase change information recording medium |
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