JPS6224968Y2 - - Google Patents
Info
- Publication number
- JPS6224968Y2 JPS6224968Y2 JP1980132684U JP13268480U JPS6224968Y2 JP S6224968 Y2 JPS6224968 Y2 JP S6224968Y2 JP 1980132684 U JP1980132684 U JP 1980132684U JP 13268480 U JP13268480 U JP 13268480U JP S6224968 Y2 JPS6224968 Y2 JP S6224968Y2
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- oscillation
- base
- switching
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Oscillators With Electromechanical Resonators (AREA)
- Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
Description
【考案の詳細な説明】
本考案はトランジスタ式水晶発振器のバイアス
電圧を利用して水晶振動子を切換える回路に関す
る。[Detailed Description of the Invention] The present invention relates to a circuit that switches a crystal resonator using a bias voltage of a transistor type crystal oscillator.
第1図は従来の水晶振動子の切換回路の例を示
す回路図で、SWは切換スイツチ、X1,X2は
水晶、D1,D2はスイツチング用のダイオー
ド、L1,L2,L3はチヨークコイル、R1電
流制限抵抗、R4,R7はトランジスタTR1の
ベースバイアス用抵抗、R2,R3は逆バイアス
用抵抗、R5はエミツタ抵抗、R6は負荷抵抗、
C1,C2,C5,C7はバイパスコンデンサ、
C3は結合コンデンサ,C4,C6は発振のため
の帰還用コンデンサである。 Figure 1 is a circuit diagram showing an example of a conventional switching circuit for a crystal resonator, where SW is a changeover switch, X1 and X2 are crystals, D1 and D2 are switching diodes, L1, L2, and L3 are chain coils, and R1 is a current Limiting resistors, R4 and R7 are base bias resistors of transistor TR1, R2 and R3 are reverse bias resistors, R5 is emitter resistor, R6 is load resistor,
C1, C2, C5, C7 are bypass capacitors,
C3 is a coupling capacitor, and C4 and C6 are feedback capacitors for oscillation.
次に動作について、スイツチSWを端子1に切
りかえ水晶X1を選択する場合について述べる。
まずスイツチSWを端子1に選択すると、直流電
源電圧は電流制限抵抗R1、チヨークコイルL
3、ダイオードD1およびチヨークコイルL1を
介して、これらとアースの間にかかる。従つてこ
のループにはほぼ電流制限抵抗R1によつて決ま
る電流が流れ、水晶X1が選ばれる。これにより
トランジスタTR1のベースおよびコレクタ間に
水晶X1が入ることになり、発振が起こり負荷抵
抗R6を介して出力される。なお電源と抵抗R
1,チヨークコイルL3,ダイオードD2および
チヨークコイルL2のループは、スイツチSWの
端子2が開放されているので導通せず、水晶X2
は選択されない。 Next, regarding the operation, the case where the switch SW is switched to terminal 1 and the crystal X1 is selected will be described.
First, when switch SW is selected as terminal 1, the DC power supply voltage is
3. It is connected between these and ground via the diode D1 and the chiyoke coil L1. Therefore, a current approximately determined by the current limiting resistor R1 flows through this loop, and the crystal X1 is selected. As a result, the crystal X1 is inserted between the base and collector of the transistor TR1, causing oscillation, which is output via the load resistor R6. In addition, the power supply and resistance R
1. The loop of the chiyoke coil L3, diode D2 and chiyoke coil L2 is not conductive because the terminal 2 of the switch SW is open, and the crystal X2
is not selected.
このうちチヨークコイルL1,L2とL3は発
振周波数に対して充分大きなリアクタンスのもの
を使用し、発振回路に対する影響を少なくなる様
にインダクタンス値を選ばなければならない。 Among these, the coils L1, L2, and L3 must have reactances sufficiently large for the oscillation frequency, and the inductance value must be selected so as to reduce the influence on the oscillation circuit.
したがつて発振周波数が低くなるとチヨークコ
イルL1,L2とL3のインダクタンスは大きく
しなければならないがコイル自身の自己共振周波
数の低下及び浮遊容量の増加などによつて発振回
路に与える影響が大になる。また形状も大きくな
るのでスペースフアクタが悪くなる等の難点があ
つた。 Therefore, as the oscillation frequency becomes lower, the inductance of the chiyoke coils L1, L2, and L3 must be increased, but the influence on the oscillation circuit becomes greater due to a decrease in the self-resonant frequency of the coils themselves and an increase in stray capacitance. In addition, since the shape becomes large, there are problems such as a worsening of the space factor.
本考案はこれらの欠点を除去することを目的と
し、スイツチングダイオードをONにする為に発
振トランジスタのバイアス電圧を利用したもの
で、以下図面により説明する。 The present invention aims to eliminate these drawbacks and utilizes the bias voltage of the oscillation transistor to turn on the switching diode, and will be explained below with reference to the drawings.
第2図は本考案の実施例を示す回路図で、第1
図と同一記号は同一部品を示す。ここでトランジ
スタTR1による発振回路は第1図の従来回路と
同じものである。 Figure 2 is a circuit diagram showing an embodiment of the present invention.
The same symbols as in the figure indicate the same parts. Here, the oscillation circuit using the transistor TR1 is the same as the conventional circuit shown in FIG.
本考案はチヨークコイルL1,L2の代わりに
ベース電流のバイアス用抵抗R10,R20を用
いたもので、バイアス用抵抗R10,R20とR
4の抵抗値はトランジスタTR1の発振回路のバ
イアスが最適になる様に設定される。また抵抗R
2,R3はスイツチングダイオードD1,D2の
逆バイアス用で抵抗値は通常R10,R20,R
4より充分大きいものとする。切換え情報により
水晶振動子X1を選択するとR4→D1→R10
の順で電流が流れてスイツチングダイオードD1
はONになる。同時に発振回路のトランジスタTR
1のベースにバイアス電流が流れ、ベースとコレ
クタに水晶X1が入ることになり発振する。 The present invention uses base current bias resistors R10 and R20 instead of the chiyoke coils L1 and L2, and the bias resistors R10 and R20 and R
The resistance value of 4 is set so that the bias of the oscillation circuit of the transistor TR1 is optimized. Also, the resistance R
2, R3 are for reverse bias of switching diodes D1, D2, and the resistance values are usually R10, R20, R
It shall be sufficiently larger than 4. When crystal oscillator X1 is selected based on switching information, R4→D1→R10
Current flows through the switching diode D1 in the order of
turns on. At the same time, the transistor TR of the oscillation circuit
A bias current flows through the base of X1, and the crystal X1 enters the base and collector, causing oscillation.
またスイツチングダイオードD2はスイツチ
SWの端子2が開放状態で、逆バイアス用抵抗R
3により逆バイアスになり、スイツチングダイオ
ードD2はOFFとなり水晶振動子X2は発振に
無関係となる。なお第2図の例では2チヤンネル
の場合を示したが水晶数を増しても同様の結果が
得られることは明らかである。 Also, switching diode D2 is a switch.
When terminal 2 of SW is open, reverse bias resistor R
3, it becomes reverse biased, the switching diode D2 turns off, and the crystal resonator X2 becomes unrelated to oscillation. Although the example in FIG. 2 shows the case of two channels, it is clear that similar results can be obtained even if the number of crystals is increased.
従つて本考案では抵抗R10,R20がトラン
ジスタTR1のベースのバイアス抵抗およびダイ
オードD1,D2をスイツチするバイアス抵抗と
して入つているため、第1図のようなチヨークコ
イルによるインダクタンスの影響は少なくなる。 Therefore, in the present invention, the resistors R10 and R20 are included as the bias resistors at the base of the transistor TR1 and the bias resistors for switching the diodes D1 and D2, so that the influence of the inductance caused by the choke coil as shown in FIG. 1 is reduced.
以上説明した様に本考案によればバイアス電圧
を利用してスイツチングダイオードを切換えるの
で、チヨークコイル等を使つた場合に比べて発振
回路への影響が少なくなり発振回路が安定にな
る。また部品点数が減る事により信頼性が向上す
るなどの効果が得られる。 As explained above, according to the present invention, since the switching diode is switched using the bias voltage, the influence on the oscillation circuit is reduced compared to the case where a choke coil or the like is used, and the oscillation circuit becomes stable. Further, by reducing the number of parts, effects such as improved reliability can be obtained.
第1図は従来のダイオードによる水晶振動子の
切換回路の一例を示し、第2図は本考案によるダ
イオードによる水晶振動子の切換回路を示す。
SW……スイツチ、X1,X2……水晶振動
子、D1,D2……ダイオード、TR1……発振
トランジスタ、R4,R10,R20……バイア
ス用抵抗、L1,L2……チヨークコイル。
FIG. 1 shows an example of a conventional switching circuit for a crystal resonator using a diode, and FIG. 2 shows a switching circuit for a crystal resonator using a diode according to the present invention. SW...Switch, X1, X2...Crystal resonator, D1, D2...Diode, TR1...Oscillation transistor, R4, R10, R20...Bias resistor, L1, L2...Chiyoke coil.
Claims (1)
なくとも2個以上の水晶振動子を設け、これを切
換スイツチにより切り換える水晶振動子切換回路
において、ベースと水晶振動子の間に各振動子に
対してそれぞれダイオードを設け、さらに該各ダ
イオードと振動子の接続点に前記発振トランジス
タのベースバイアス用の抵抗を設けこれをそれぞ
れ前記切換スイツチの各端子に接続せしめたこと
を特徴とする水晶振動子切換回路。 In a crystal resonator switching circuit in which at least two or more crystal resonators are provided between the base and collector of an oscillation transistor and these are switched by a changeover switch, a diode is connected for each resonator between the base and the crystal resonator. A crystal resonator switching circuit characterized in that a resistor for base biasing the oscillation transistor is provided at a connection point between each of the diodes and the resonator, and the resistor is connected to each terminal of the switching switch.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1980132684U JPS6224968Y2 (en) | 1980-09-18 | 1980-09-18 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1980132684U JPS6224968Y2 (en) | 1980-09-18 | 1980-09-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5756010U JPS5756010U (en) | 1982-04-01 |
| JPS6224968Y2 true JPS6224968Y2 (en) | 1987-06-26 |
Family
ID=29492917
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1980132684U Expired JPS6224968Y2 (en) | 1980-09-18 | 1980-09-18 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6224968Y2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6139211U (en) * | 1984-08-04 | 1986-03-12 | 合資会社 大成アルミニユ−ム製作所 | alcohol bara |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS532093B2 (en) * | 1972-06-21 | 1978-01-25 |
-
1980
- 1980-09-18 JP JP1980132684U patent/JPS6224968Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5756010U (en) | 1982-04-01 |
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