JPS6231052A - Optical recording medium - Google Patents
Optical recording mediumInfo
- Publication number
- JPS6231052A JPS6231052A JP7479786A JP7479786A JPS6231052A JP S6231052 A JPS6231052 A JP S6231052A JP 7479786 A JP7479786 A JP 7479786A JP 7479786 A JP7479786 A JP 7479786A JP S6231052 A JPS6231052 A JP S6231052A
- Authority
- JP
- Japan
- Prior art keywords
- optical recording
- dielectric film
- refractive index
- medium
- composite dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 19
- 239000002131 composite material Substances 0.000 claims abstract description 22
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 17
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 17
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 230000007774 longterm Effects 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 5
- 239000004033 plastic Substances 0.000 description 5
- 229920003023 plastic Polymers 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- -1 Rare earth transition metal Chemical class 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は光記録媒体に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to optical recording media.
従来の光記録媒体は、垂直磁気記録層に集光したレーザ
光を照射することにより磁化反転をおこさせ情報を記録
する方法、あるいは記録層にレーザ光を照射し、記録層
の結晶構造を変化させる（結晶から非結晶質又はその逆
、あるいは六方晶から立方晶又はその逆等）つまり相変
態により情報を記録する方法、あるいは記録層にレーザ
光を照射することにより穴を開ける。またはバブルを形
成するなどの記録部分の形状を変化させ情報を・記録す
る方法がある。Conventional optical recording media record information by irradiating the perpendicular magnetic recording layer with focused laser light to cause magnetization reversal, or by irradiating the recording layer with laser light to change the crystal structure of the recording layer. A method of recording information by phase transformation (from crystal to amorphous or vice versa, or from hexagonal to cubic or vice versa), or by making holes by irradiating the recording layer with laser light. Alternatively, there is a method of recording information by changing the shape of the recording part, such as by forming a bubble.
特に従来の光磁気記録媒体は、基板に案内溝のついたグ
ラスチック基板（Ｐｉ：！、ＰＭＭＡ、エポキシ樹脂等
）を使用することが多い。これは射出成型が可能であシ
、安価で大量生産ができるためである。しかしプラスチ
ック基板は、吸湿性、ガス透明度が高く、光磁気記録層
であるＧｄＴｂＦｅ。In particular, conventional magneto-optical recording media often use a glass substrate (Pi:!, PMMA, epoxy resin, etc.) with guide grooves on the substrate. This is because injection molding is possible and mass production is possible at low cost. However, the plastic substrate is made of GdTbFe, which has high hygroscopicity and gas transparency, and is a magneto-optical recording layer.
ＴｂＦｅ０ｏ、 ＧｄＴｂＦｅＣｏ、 Ｄ７Ｆ６００．
’ＮｄＤｙＦｅ０ｏ等の希土類遷移金属合金膜が容易
におかされてしまい、磁気特性の劣化が激しい。そこで
、プラスチック基板と光磁気記録ノーの間に５ｉＱ１．
ＳｉＯ等の酸化物誘電体膜を一層設けることによシ基板
側からの耐食性の向上をはかった。しかし、これら誘電
体は酸化物であるため、遊離酸素が光磁気記録層を酸化
させてしまうために保護効果は十分でなかった。TbFe0o, GdTbFeCo, D7F600.
Rare earth transition metal alloy films such as 'NdDyFeOo are easily damaged, resulting in severe deterioration of magnetic properties. Therefore, between the plastic substrate and the magneto-optical recording node, 5iQ1.
By providing one layer of an oxide dielectric film such as SiO, corrosion resistance from the substrate side was improved. However, since these dielectrics are oxides, free oxygen oxidizes the magneto-optical recording layer, resulting in insufficient protection.
そして次に考えられたのが、窒化シリコン、窒化アルミ
ニウム、硫化亜鉛等の非酸化物系誘電体膜をプラスチッ
ク基板上に成膜することであった。The next idea was to form a non-oxide dielectric film such as silicon nitride, aluminum nitride, or zinc sulfide on a plastic substrate.
しかし、これら非酸化物系誘電体膜は基板との密着力が
なく、又は密着力はあってもすぐクラックが発生するな
ど実用的でなかった。However, these non-oxide dielectric films lack adhesion to the substrate, or even if they do have adhesion, they easily crack, making them impractical.
そこで本発明者らは鋭意研究の結果、特願昭６０−８９
４５２ で示しているごとく、窒化アルミニウムと窒
化シリコンの複合膜が光磁気記録層の完壁な保ｉｆ！膜
となり得ることを示した。そして、さらなる研究の結果
、本願発明者らは窒化アルミニウムと窒化シリコンの複
合膜のうちでも膜質の違いによシ光磁気記録層の保護効
果に差異が生ずることを発゛見した。Therefore, as a result of intensive research, the inventors of the present invention found that
452, a composite film of aluminum nitride and silicon nitride can perfectly maintain the magneto-optical recording layer. It was shown that it can be used as a membrane. As a result of further research, the inventors of the present invention discovered that even among composite films of aluminum nitride and silicon nitride, differences in film quality caused differences in the protective effect of the magneto-optical recording layer.
そこで本発明は、本発明者らが特願昭６０−８９４５２
で示しだ窒化アルミニウムと窒化シリコンの複合膜
のうちでも、さらに保護効果のすぐれた完全無欠の光記
録媒体を提供することにある。Therefore, the present invention was developed by the inventors in Japanese Patent Application No. 60-89452.
Among the composite films of aluminum nitride and silicon nitride shown in the above, it is an object of the present invention to provide a perfect optical recording medium with an even better protective effect.
本発明の光記録媒体は、透明基板の片面に光記録層を形
成し、光記録層に集光したレーザ光を照射することによ
り、記録、再生及び消去をする光記録媒体において、光
記録層と透明基板の間に、主たる成分が窒化アルミニ９
ムと窒化シリコンの２成分を含む複合誘電体膜が設けら
れており、しかも複合誘電体膜の屈折率が２．１５以下
、１．７０以上であることを特徴とする。The optical recording medium of the present invention is an optical recording medium in which an optical recording layer is formed on one side of a transparent substrate, and recording, reproduction, and erasing are performed by irradiating the optical recording layer with a focused laser beam. and the transparent substrate, the main component is aluminum nitride 9.
A composite dielectric film containing two components of aluminum and silicon nitride is provided, and the composite dielectric film has a refractive index of 2.15 or less and 1.70 or more.
本発明の上記の構成によれば、窒化アルミニウムと窒化
シリコンの複合誘電体膜でも、屈折率が２．１５以下１
．７０以上のものが、よシ一層の保護効果がある。これ
は、屈折率が２．１５よシ大きいというのはアルミニ９
ムあるいはシリコンが窒素と十分に反応していないとい
うことであシ、未反応のアルミニ９ムやシリコンが膜中
に存在することになシ、耐候性試験（加速試験）中に光
学定数が変ってしまうことになるため光磁気記録媒体の
経時変化を生ずることになる。又、屈折率が１．７０未
満であるというのは誘電体膜の密度が疎（ポーラス）に
なった状態のことであシ保護膜としての効果が劣るため
磁気記録層の劣化を生せしめることになる。そのため屈
折率は２．１５以下１．７０以上である必要が出てぐる
のである。According to the above configuration of the present invention, even a composite dielectric film of aluminum nitride and silicon nitride has a refractive index of 2.15 or less.
．． Anything above 70 is even more protective. This means that aluminum 9 has a refractive index greater than 2.15.
This means that the aluminum or silicon has not sufficiently reacted with nitrogen, and that unreacted aluminum or silicon is present in the film.The optical constants may change during the weathering test (accelerated test). This results in deterioration of the magneto-optical recording medium over time. Also, if the refractive index is less than 1.70, it means that the density of the dielectric film is sparse (porous), and the effect as a protective film is poor, causing deterioration of the magnetic recording layer. become. Therefore, the refractive index needs to be 2.15 or less and 1.70 or more.
以下に本発明の効果を実施例をもとに具体的に詳述する
。The effects of the present invention will be specifically explained in detail below based on Examples.
第１図は、本発明における光磁気記録媒体の断面図であ
り、１は溝付きｐｃ基板で溝ピッチ１．６μｍ、＃幅（
Ｌ ８ ｐｍ 、溝深さ７００Ａのものである。このＰ
Ｃ基板の溝側に窒化アルミニウムと窒化シリコンの複合
誘電体膜１０００χを形成したのが２である。そして窒
化アルミニウムと窒化シリコンの比は、特願昭６０−８
９４５２で示した範囲であり、窒化アルミニウム：窒化
シリコン−２０：８０−％である。その上に５として光
磁気記録層ＮｄＤｙＦｅＣ！ＯＴｉ 膜４５０スを成
膜し、さらに２と同じ窒化アルミニ９ムと窒化シリコン
の複合誘電体膜１０００Ａを４として成膜した。FIG. 1 is a sectional view of a magneto-optical recording medium according to the present invention, and 1 is a grooved PC board with a groove pitch of 1.6 μm and a # width (
L 8 pm, groove depth 700A. This P
In No. 2, a composite dielectric film 1000x of aluminum nitride and silicon nitride was formed on the groove side of the C substrate. And the ratio of aluminum nitride and silicon nitride is
9452, and is aluminum nitride:silicon nitride-20:80-%. On top of that is a magneto-optical recording layer NdDyFeC! An OTi film of 450 mm was formed, and a composite dielectric film of 1000 A of aluminum nitride and silicon nitride, which was the same as 2, was further formed as a 4 film.
成膜方法は、スパッタ法を用い複合誘電体膜を成膜する
にあたり、窒化アルミニウムー２０＝８０ゴチの焼結タ
ーゲットを用いＡ ｒ 十Ｎ ２ガスを導入してＲＦ反
応スパッタリングで成膜した。第２図は、複合誘電体膜
を成膜するに当り、スパッタリング条件を変えて成膜し
た場合の屈折率変化を見たものである。Ｒ１？’パワー
５００Ｗ一定、膜厚１ｏｏｏＸ一定、Ｎ１分圧２０％一
定とした。The composite dielectric film was formed by sputtering using a sintered target of aluminum nitride (20=80), introducing A r +N 2 gas, and forming the film by RF reaction sputtering. FIG. 2 shows changes in the refractive index when the composite dielectric film was formed under different sputtering conditions. R1? 'The power was constant at 500W, the film thickness was constant at 1oooX, and the N1 partial pressure was constant at 20%.
横軸がスパッタ全圧、縦軸が屈折率であり、スパッタ全
圧が扁イｇなるほど屈折率が低くなっていくのがわかる
。そして次に、Ｎ２ 分圧を変えて成膜した場合の屈折
率変化が第５図である。この場合、ＲＦパワー５００Ｗ
一定、膜厚１０００Ａ一定、スパッタ全圧４ｍＴＯｒ−
ｒ一定とした。横軸ばＮ２分圧、縦軸が屈折率であり、
Ｎ２ 分圧が尚くなるほど屈折率が低くなっていくの
がわかる。そしてさらに第２図、第５図で示した窒化ア
ルミニウムと窒化シリコンの複合誘電体膜全サンプルの
膜質の評価を緩衝フッ酸液によるエツチングテストによ
りおこなった。液温は２６℃固定とした。エツチング時
間が長いほど膜質は良い、つまり緻密さらに反応が完全
にされていることになる。It can be seen that the horizontal axis is the sputtering total pressure and the vertical axis is the refractive index, and the smaller the sputtering total pressure, the lower the refractive index. Next, FIG. 5 shows the change in refractive index when a film is formed by changing the N2 partial pressure. In this case, the RF power is 500W
Constant, film thickness constant 1000A, total sputtering pressure 4mTor-
r was set constant. The horizontal axis is the N2 partial pressure, and the vertical axis is the refractive index.
It can be seen that the higher the N2 partial pressure, the lower the refractive index. Further, the film quality of all samples of the composite dielectric film of aluminum nitride and silicon nitride shown in FIGS. 2 and 5 was evaluated by an etching test using a buffered hydrofluoric acid solution. The liquid temperature was fixed at 26°C. The longer the etching time, the better the film quality, that is, the denser and more complete the reaction.
第４図の横軸は、第２図と同様のスパッタ全圧、第５図
る横軸は、第６図と同様のＮ２ 分圧である。The horizontal axis in FIG. 4 is the sputtering total pressure as in FIG. 2, and the horizontal axis in FIG. 5 is the N2 partial pressure as in FIG. 6.
縦軸は第４図。第５図ともエツチング時間である。The vertical axis is Figure 4. Figure 5 also shows the etching time.
第４図、第５図かられかるようにエツチング時間が極端
に短かい所があシ、これを第２図、第６図と照らし合わ
せると、屈折率が、２．１５より大きい所と１，７０よ
り小さい所がエツチング時間の短い領域である。つまシ
屈折率が２．１５以下１．７０以上の領域の本発明複合
誘電体膜の膜質が艮ぐ、保護効果もすぐれていると考え
られる。As can be seen from Figures 4 and 5, there are places where the etching time is extremely short, and when this is compared with Figures 2 and 6, the refractive index is greater than 2.15 and 1. , 70 is a region where the etching time is short. It is considered that the composite dielectric film of the present invention having a refractive index of 2.15 or less and 1.70 or more has excellent film quality and excellent protective effect.
そこで、第１図に示す媒体構造図で、窒化アルミニウム
と窒化シリコンの複合誘電体膜の屈折率の異なる光磁気
記録媒体を作成し、６ＤＣ９０％ＲＨの恒温恒湿変化に
置き加速試験を試みた。Therefore, we created a magneto-optical recording medium with a composite dielectric film of aluminum nitride and silicon nitride with different refractive indexes using the medium structure diagram shown in Figure 1, and attempted an accelerated test by placing it under constant temperature and humidity changes at 6 DC and 90% RH. .
第６図に示したのは、媒体の基板側より見たカー回転角
の経時変化図である。横軸は経過時間、縦軸は経過時間
℃に対するカー回転角θｋ ｒ（ｔ）と成膜直後のカー
回転角θｋｒ（０）の比を示している。５は複合誘電体
膜の屈折率りが２．１５，２．０１゜１．９０．１．８
５．．１．８０．１．７０の媒体で、６はｎが２．２４
の媒体で、７はＤが２．６１の媒体、８はｎが１．６９
，１．６５の媒体で、９はｎが１．６５ 。FIG. 6 shows a graph of the Kerr rotation angle over time as seen from the substrate side of the medium. The horizontal axis shows the elapsed time, and the vertical axis shows the ratio of the Kerr rotation angle θkr(t) to the Kerr rotation angle θkr(0) immediately after film formation with respect to the elapsed time °C. 5, the refractive index of the composite dielectric film is 2.15, 2.01°1.90.1.8
5. ．． 1.80.1.70 medium, 6 is n is 2.24
, 7 is a medium with D of 2.61, 8 is a medium with n of 1.69
, 1.65, and 9 has n of 1.65.
１．６０の媒体である。この図かられかるように、本発
明による屈折率が２．１５以下１．７０以上の媒体では
経時変化が全くな（５０００ｈｒ以上経過しても全く変
動がない。一方屈折率が２．１５より犬さい媒体６．７
では、加速試験初期（１０〜５０ｈｒ） に変化生じ
、その後一定している。これは屈折率２．１５より大き
い誘電体膜は未反応のＭやＳｌを含んでいるため、加速
試験中に未反応成分が、安定な酸化物等へ変化していく
ことを全示している。その結果θｋｒ（ｔ）が変化する
ものであり、媒体の記録再生特性（ｃ／Ｎ）に重大な変
化をきたす。又、屈折率が１．７０より小さい媒体８．
９では、加速試験後１００ｈｒ程度から変化が生じ、徐
々に変化していさ最後はθｋ ｒ（ｔ）が０に近づいて
いく。これは屈折率１．７０より小さい誘電体膜は膜質
が密でない、つまり疎であるため、加速試験中に水分や
反応性ガスが侵入してくることを示している。その結果
、光磁気記録層の劣化を進行させθｋ ｒ（ｔ）が変化
するものである。これも又、媒体の記録再生特性（ｃ／
Ｎ）に重大な変化をきたす。1.60 medium. As can be seen from this figure, the medium according to the present invention with a refractive index of 2.15 or less and 1.70 or more shows no change over time (there is no change at all even after more than 5000 hours have passed. dog size medium 6.7
In this case, a change occurs at the beginning of the accelerated test (10 to 50 hours), and then remains constant. This clearly indicates that the dielectric film with a refractive index higher than 2.15 contains unreacted M and Sl, so the unreacted components change into stable oxides etc. during the accelerated test. . As a result, θkr(t) changes, causing a significant change in the recording/reproducing characteristics (c/N) of the medium. Also, a medium with a refractive index smaller than 1.708.
In No. 9, a change occurs about 100 hours after the acceleration test, and the change gradually occurs until θk r (t) approaches 0. This indicates that the dielectric film having a refractive index of less than 1.70 is not dense, that is, is sparse, and therefore moisture and reactive gases enter during the accelerated test. As a result, the deterioration of the magneto-optical recording layer progresses and θk r(t) changes. This also refers to the recording/reproducing characteristics of the medium (c/
N) causes a significant change.
次に、第７図に示すのは、媒体の保磁力の経時変化図で
ある。横軸は経過時間、縦軸は経過時ｍＪｔに対する保
磁力Ｈｃ（ｔ） と成膜直後の保磁力Ｆ４ ｃ（ｏ）
の比を示している。１０は屈折率ｎが２．７５，２．０
１゜１．９０．１８５．１．８０．１．７０．及び２．
２４．２ｊ１ の媒体で、１１ばｎが１．６９．１．６
５の媒体で、１２Ｈｎが１．６６．１．６０の媒体であ
る。この図から屈折率ｎが１．７０より小さい媒体の保
磁力が時間とともに変化するのがわかる。Next, FIG. 7 shows a diagram of the change in coercive force of the medium over time. The horizontal axis is elapsed time, and the vertical axis is coercive force Hc(t) versus mJt during elapsed time and coercive force F4 c(o) immediately after film formation.
It shows the ratio of 10 has a refractive index n of 2.75, 2.0
1゜1.90.185.1.80.1.70. and 2.
24.2j1 medium, 11ban is 1.69.1.6
5 and 12Hn is 1.66.1.60. It can be seen from this figure that the coercive force of a medium with a refractive index n smaller than 1.70 changes with time.
これは、上述した誘電体膜の膜質が疎であるために光磁
気記録層の劣化によるものである。（光磁気記録ノーは
遷移金属ｒｉｃｈの組成）一方、ｎが１．７０以上の媒
体の保磁力は長時間にわたり変化がない。しかしｎが２
．１５より大きい媒体は第６図の方から保護膜としては
適さない。This is due to deterioration of the magneto-optical recording layer due to the sparse quality of the dielectric film mentioned above. (Magneto-optical recording has a transition metal rich composition) On the other hand, the coercive force of a medium in which n is 1.70 or more does not change over a long period of time. But n is 2
．． A medium larger than 15 is not suitable as a protective film as shown in FIG.
本実施例においては、基板にｐ（Ｈを用いたが、ＰＭＭ
Ａ、エポキシ樹脂等のプラスチック基板でも本発明は有
効であシ、成膜方法もスパッタ法に限定されるものでな
く、蒸着、（、ＶＤ＄でも何らさしつかえない。さらに
ターゲットも窒化アルミニウムと窒化シリコンの比が２
０ ： ８０ ｒｎｏＫ ％のものを使用したが特願昭
６０−８９４５２に示している組成範囲であれば何ら問
題ない。しかもターゲットもセラミックでなく、アルミ
ニウムとシリコンのメタルターゲットを用いても本発明
は同様の効果を発揮する。In this example, p(H was used for the substrate, but PMM
A. The present invention is also effective on plastic substrates such as epoxy resin, and the film forming method is not limited to sputtering, but evaporation, VD$, etc. may also be used.Aluminum nitride and silicon nitride can also be used as targets. The ratio of
0:80 rnoK% was used, but there is no problem as long as it is within the composition range shown in Japanese Patent Application No. 60-89452. Furthermore, the present invention exhibits similar effects even when a metal target of aluminum and silicon is used instead of a ceramic target.
さらに、本発明は光磁気記録媒体の保護膜に適するばか
シでなく、プラスチック基板からのガス、水分を封じる
目的に対して全てに有効であり、相変態復元記録媒体に
も有効である。Further, the present invention is not only suitable for use as a protective film for magneto-optical recording media, but is also effective for all purposes of sealing off gas and moisture from plastic substrates, and is also effective for phase change restoration recording media.
以上述べた如く、本発明による光記録媒体において、長
期間（５０年以上）にわたり信頼性を保証できる媒体が
提供できることになる。As described above, the optical recording medium according to the present invention can provide a medium whose reliability can be guaranteed for a long period of time (50 years or more).
第１図は、本発明における光磁気記録媒体の断面図であ
る。
第２図は、屈折率のスパッタ全圧依存性図。
第５図は、屈折率のスパッタＮ２ 分圧依存性図。
第４図は、エツチング時間のスパッタ全圧依存性図。
第５図は、エツチング時間のスパッタＮ２ 分圧依存
性図。
第６図は、６０℃９０％ＲＦＩの加速試験によるカー回
転角の経時変化図。
第７図は、６００９０％ＲＨの加速試験による保磁力の
経時変化図。
１・・・・・・溝付＠ＰＣ基板
２・・・・・・窒化アルミニウムと窒化シリコンの複合
誘電体膜
６・・・・・・光磁気記録）＠ ＮｄＤｙＦ’ｅＯｏＴ
ｉ膜４・・・・・・窒化アルミニウムと窒化シリコンの
複合誘電体膜
５・・・・・・複合誘電体膜の屈折率ｎが２．１５，２
．０１゜１．９０．１．８５．１．８０，１．７０の媒
体６・・・・・・ｎが２．２４の媒体
７・・・・・・ｎが２．５１の媒体
８・・・・・・ｎが１．６９，１．６５の媒体９・・・
・・・ｎが１．６５，１．６０の媒体１０・・・ｎが２
．１５．２．０１．１．９０．１．８５．１．８０゜１
７０、及び２．２４，２．５１の媒体１１・・・Ｄが１
．６９，１．６５の媒体１２・・・ｎが１．６５，１．
６０の媒体板 上
出願人 セイコーエプソン株式会社
八Δ
め１図
ズハ゛ツタゑソＥ−（７ＦＩＴｏｒｒ）第２図
葛 ３ 図FIG. 1 is a sectional view of a magneto-optical recording medium according to the present invention. FIG. 2 is a diagram showing the dependence of refractive index on sputtering total pressure. FIG. 5 is a diagram showing the dependence of refractive index on sputtering N2 partial pressure. FIG. 4 is a diagram showing the dependence of etching time on sputtering total pressure. FIG. 5 is a diagram showing the dependence of etching time on sputtering N2 partial pressure. FIG. 6 is a diagram of the change in Kerr rotation angle over time in an accelerated test at 60° C. and 90% RFI. FIG. 7 is a diagram of the change in coercive force over time in an accelerated test at 60090% RH. 1... Grooved @PC substrate 2... Composite dielectric film of aluminum nitride and silicon nitride 6... Magneto-optical recording) @ NdDyF'eOoT
i film 4...Composite dielectric film of aluminum nitride and silicon nitride 5...Refractive index n of the composite dielectric film is 2.15,2
．． 01゜1.90.1.85. Medium 6 with 1.80, 1.70...Medium 7 with n of 2.24...Medium 8 with n of 2.51... ...Medium 9 where n is 1.69, 1.65...
...Medium 10 where n is 1.65, 1.60...n is 2
．． 15.2.01.1.90.1.85.1.80゜1
70, and 2.24, 2.51 medium 11...D is 1
．． 69, 1.65 medium 12... n is 1.65, 1.
60 Media Board Applicant: Seiko Epson Corporation
Claims (1)
光したレーザ光を照射することにより、記録、再生及び
消去をする光記録媒体において、前記光記録層と前記透
明基板の間に、主たる成分が窒化アルミニウムと窒化シ
リコンの２成分を含む複合誘電体膜が設けられており、
しかも前記複合誘電体膜の屈折率が２．１５以下１．７
０以上であることを特徴とする光記録媒体。In an optical recording medium in which an optical recording layer is formed on one side of a transparent substrate, and recording, reproduction, and erasing are performed by irradiating the optical recording layer with focused laser light, there is a space between the optical recording layer and the transparent substrate. A composite dielectric film containing two main components, aluminum nitride and silicon nitride, is provided,
Moreover, the refractive index of the composite dielectric film is 1.7 or less than 2.15.
An optical recording medium characterized in that it is 0 or more.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60-89452 | 1985-04-25 | ||
| JP8945285 | 1985-04-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6231052A true JPS6231052A (en) | 1987-02-10 |
| JPH0370297B2 JPH0370297B2 (en) | 1991-11-07 |
Family
ID=13971080
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7479786A Granted JPS6231052A (en) | 1985-04-25 | 1986-04-01 | Optical recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6231052A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6122458A (en) * | 1984-07-09 | 1986-01-31 | Kyocera Corp | Photomagnetic recording element |
| JPS6271042A (en) * | 1985-09-24 | 1987-04-01 | Sharp Corp | Optical memory element |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62114141A (en) * | 1985-11-14 | 1987-05-25 | Sharp Corp | Magnetooptic memory element |
-
1986
- 1986-04-01 JP JP7479786A patent/JPS6231052A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62114141A (en) * | 1985-11-14 | 1987-05-25 | Sharp Corp | Magnetooptic memory element |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6122458A (en) * | 1984-07-09 | 1986-01-31 | Kyocera Corp | Photomagnetic recording element |
| JPS6271042A (en) * | 1985-09-24 | 1987-04-01 | Sharp Corp | Optical memory element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0370297B2 (en) | 1991-11-07 |
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