JPS623153Y2 - - Google Patents
Info
- Publication number
- JPS623153Y2 JPS623153Y2 JP1765982U JP1765982U JPS623153Y2 JP S623153 Y2 JPS623153 Y2 JP S623153Y2 JP 1765982 U JP1765982 U JP 1765982U JP 1765982 U JP1765982 U JP 1765982U JP S623153 Y2 JPS623153 Y2 JP S623153Y2
- Authority
- JP
- Japan
- Prior art keywords
- diode
- cylindrical body
- moxibustion
- heat
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 16
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000001225 therapeutic effect Effects 0.000 description 3
- 238000002560 therapeutic procedure Methods 0.000 description 3
- 208000027418 Wounds and injury Diseases 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 208000014674 injury Diseases 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000000638 stimulation Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229940124595 oriental medicine Drugs 0.000 description 1
- 238000001126 phototherapy Methods 0.000 description 1
Landscapes
- Electrotherapy Devices (AREA)
- Finger-Pressure Massage (AREA)
Description
【考案の詳細な説明】
この考案は皮膚の微小範囲に熱刺激を与える点
灸器に関する。[Detailed description of the invention] This invention relates to a moxibustion device that applies thermal stimulation to a minute area of the skin.
近年、東洋医学の普及はめざましく、特に灸は
一般家庭における治療方法となりつつあるが、艾
を焼いてする方法は安全かつ確実に治療効果を得
るためには熟練が必要であり、その問題を解決す
るものとして種々の器具が考案されているが、艾
を焼くことに変わりなく安全上の上で問題があ
る。 In recent years, the spread of Oriental medicine has been remarkable, and moxibustion in particular is becoming a treatment method for ordinary households, but the method of burning moxa requires skill in order to safely and reliably obtain therapeutic effects, and this problem has been solved. Various devices have been devised to do this, but they pose the same safety problems as burning mosa.
そこで、艾を焼くことは皮膚に熱刺激を与える
ことであるので、電気熱によれば安全かつ簡易で
あることに着目して電灸器なるものが考案されて
いる。しかし、この電灸器は大型なもので、皮膚
との接触面も広く(通常2cmφ前後)使用態様及
び治療効果の点で問題があるうえに、熱源にニク
ロム線を使用しているため、高温になりすぎて火
傷等の傷害が生じる問題がある。 Therefore, since burning moxa involves applying heat stimulation to the skin, electric moxibustion devices have been devised, focusing on the fact that electric heat is safe and simple. However, this electric moxibustion device is large and has a wide contact surface with the skin (usually around 2 cm diameter), which poses problems in terms of how it is used and its therapeutic effects.In addition, it uses a nichrome wire as a heat source, so it is high temperature. There is a problem in that excessive burns can cause injuries such as burns.
ところで、半導体ダイオードは整流・発光等に
使用されているが、電流を流すと、PN接合等の
接合部が付随的に発熱する。一方、灸を行なう皮
膚面積は直径5mm以下で充分である。このため小
さい半導体ダイオードは発熱体として最適である
うえに、あまり高い電圧を加えると破壊して発熱
しない性質も有する。さらに、ダイオード療法と
して半導体ダイオードは使用されてい。この療法
は、半導体ダイオードの整流作用により人体のイ
オン配分を変える効果とされているが、その効能
理由は不明である。 By the way, semiconductor diodes are used for rectification, light emission, etc., but when current is passed through them, the junctions such as PN junctions generate heat. On the other hand, a skin area for moxibustion of 5 mm or less in diameter is sufficient. For this reason, small semiconductor diodes are ideal as heating elements, and they also have the property of not generating heat because they will break down if too high a voltage is applied to them. Additionally, semiconductor diodes are used as diode therapy. This therapy is said to have the effect of changing the distribution of ions in the human body through the rectification effect of semiconductor diodes, but the reason for its effectiveness is unknown.
この考案は上記半導体ダイオードの性質を利用
して従来の電灸器の欠点を解消することを目的と
する。 This invention aims to eliminate the drawbacks of conventional moxibustion devices by utilizing the properties of the semiconductor diode.
すなわち、この考案は、筒状体の一端に通電に
より発熱する半導体ダイオードを固定し、前記筒
状体の他端から給電用コードを筒状体内を通して
前記半導体ダイオードに導びき接続したのであ
る。 That is, in this invention, a semiconductor diode that generates heat when energized is fixed to one end of a cylindrical body, and a power supply cord is led from the other end of the cylindrical body through the cylindrical body and connected to the semiconductor diode.
半導体ダイオードとしては、市販のもので、通
電により通常の灸と同じ温度、例えば45℃前後の
熱を発するものを適宜に選択すればよい。 The semiconductor diode may be appropriately selected from commercially available ones that emit heat at the same temperature as normal moxibustion, for example, around 45° C., when energized.
この様に構成される点灸器は、半導体ダイオー
ドに通電し、筒状体を握接してダイオードを患部
に圧接して点灸を行なう。 The moxibustion device configured in this manner performs moxibustion by energizing the semiconductor diode, squeezing the cylindrical body, and pressing the diode against the affected area.
以下、この考案の実施例を添付図面に基づいて
説明する。 Hereinafter, embodiments of this invention will be described based on the accompanying drawings.
第1図及び第2図に示すように、筒状体1の先
端部に絶縁板2が取出可能に圧入されている。こ
の絶縁板2の両面には導電板3が固着され、電導
板3の一端に筒状体1の基部から導入された給電
用コード4が接続されている。電導板3の他端に
は半導体ダイオード5が接続されて、そのダイオ
ード5は筒状体1から突出しガラス等の耐熱性絶
縁材により被覆されている。ダイオード5は通常
の灸と同じ温度例えば45℃前後の熱を発するもの
を使用し、例えば200mmWのものとする。また、
ダイオード5の数は第3図に示すように2個でも
よいし、それ以上でもよく適宜に選定すればよ
い。上記コード4の端にはプラグ6が設けられ、
このプラグ6を電源ソケツトに接続することによ
り、ダイオード5に通電する。 As shown in FIGS. 1 and 2, an insulating plate 2 is press-fitted into the tip of a cylindrical body 1 so as to be removable. A conductive plate 3 is fixed to both sides of the insulating plate 2, and a power supply cord 4 introduced from the base of the cylindrical body 1 is connected to one end of the conductive plate 3. A semiconductor diode 5 is connected to the other end of the conductive plate 3, and the diode 5 protrudes from the cylindrical body 1 and is covered with a heat-resistant insulating material such as glass. The diode 5 is one that emits heat at the same temperature as normal moxibustion, for example, around 45° C., and has a power of, for example, 200 mmW. Also,
The number of diodes 5 may be two as shown in FIG. 3, or more than two, and may be selected as appropriate. A plug 6 is provided at the end of the cord 4,
By connecting this plug 6 to a power socket, the diode 5 is energized.
ダイオード5への通電回路は種々のものが考え
られるが、例えば第4図に示すように、変圧器7
に可変抵抗8を介してダイオード5を接続し、可
変抵抗8によりダイオード5に加わる電流値を制
御するようにして発熱量を調節する。 Various circuits are conceivable for energizing the diode 5, but for example, as shown in FIG.
A diode 5 is connected to the diode 5 through a variable resistor 8, and the amount of heat generated is adjusted by controlling the current value applied to the diode 5 by the variable resistor 8.
上記実施例は以上のように構成され、使用する
際は、ダイオード5に通電し、筒状体1を握持し
てダイオード5を患部に圧接して点灸を行なう。 The above embodiment is constructed as described above. When the device is used, a current is passed through the diode 5, the cylindrical body 1 is grasped, and the diode 5 is pressed against the affected area to perform moxibustion.
以上のように、この考案の点灸器によると、発
熱体を半導体ダイオードで構成したので、発熱部
を小さくできてダイオード療法を加えた点灸が行
なえ、適確な治療効果を得ることができるうえ
に、ダイオードは、自己破壊により発熱を停止す
る安全装置の役目を果すので、使用中に異常高電
圧が生じて高熱となつて火傷等の傷害が生じる危
惧もない。 As described above, according to the moxibustion device of this invention, since the heating element is composed of a semiconductor diode, the heating part can be made small, and moxibustion with diode therapy can be performed, and an appropriate therapeutic effect can be obtained. Moreover, since the diode serves as a safety device that stops heat generation by self-destruction, there is no risk of abnormally high voltage being generated during use, resulting in high heat and injury such as burns.
また、半導体ダイオードに発光半導体ダイオー
ドを使用すれば、光療法の効果を加えることがで
きる。 Furthermore, if a light emitting semiconductor diode is used as the semiconductor diode, the effect of phototherapy can be added.
第1図はこの考案の点灸器の一実施例の斜視
図、第2図は第1図の要部断面図、第3図は他の
実施例の要部斜視図、第4図は回路図である。
1……筒状体、4……給電用コード、5……半
導体ダイオード。
Fig. 1 is a perspective view of one embodiment of the moxibustion device of this invention, Fig. 2 is a sectional view of the main part of Fig. 1, Fig. 3 is a perspective view of the main part of another embodiment, and Fig. 4 is a circuit. It is a diagram. 1... Cylindrical body, 4... Power supply cord, 5... Semiconductor diode.
Claims (1)
オードを固定し、筒状体の他端から給電用コード
を筒状体内を通して前記半導体ダイオードに導び
き接続したことを特徴とする点灸器。 A moxibustion device characterized in that a semiconductor diode that generates heat when energized is fixed to one end of a cylindrical body, and a power supply cord is led from the other end of the cylindrical body through the cylindrical body and connected to the semiconductor diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1765982U JPS58120734U (en) | 1982-02-08 | 1982-02-08 | Moxibustion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1765982U JPS58120734U (en) | 1982-02-08 | 1982-02-08 | Moxibustion device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58120734U JPS58120734U (en) | 1983-08-17 |
| JPS623153Y2 true JPS623153Y2 (en) | 1987-01-24 |
Family
ID=30029952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1765982U Granted JPS58120734U (en) | 1982-02-08 | 1982-02-08 | Moxibustion device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58120734U (en) |
-
1982
- 1982-02-08 JP JP1765982U patent/JPS58120734U/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58120734U (en) | 1983-08-17 |
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