JPS6231982A - Silicon carbide heat generating body - Google Patents

Silicon carbide heat generating body

Info

Publication number
JPS6231982A
JPS6231982A JP60171109A JP17110985A JPS6231982A JP S6231982 A JPS6231982 A JP S6231982A JP 60171109 A JP60171109 A JP 60171109A JP 17110985 A JP17110985 A JP 17110985A JP S6231982 A JPS6231982 A JP S6231982A
Authority
JP
Japan
Prior art keywords
silicon carbide
heating element
furnace
heat generating
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60171109A
Other languages
Japanese (ja)
Inventor
水野 善章
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TOKAI KONETSU KOGYO KK
Original Assignee
TOKAI KONETSU KOGYO KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TOKAI KONETSU KOGYO KK filed Critical TOKAI KONETSU KOGYO KK
Priority to JP60171109A priority Critical patent/JPS6231982A/en
Publication of JPS6231982A publication Critical patent/JPS6231982A/en
Pending legal-status Critical Current

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  • Resistance Heating (AREA)
  • Non-Adjustable Resistors (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、各種工業炉の加熱源として使用される炭化ケ
イ素発熱体に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a silicon carbide heating element used as a heating source for various industrial furnaces.

〔従来の技術〕[Conventional technology]

一般に炭化ケイ素発熱体は、均一な抵抗値を有する発熱
部と、該発熱部の両端に形成された低抵抗の端子部から
構成される。
Generally, a silicon carbide heating element is composed of a heat generating part having a uniform resistance value and low resistance terminal parts formed at both ends of the heat generating part.

炭化ケイ素発熱体は、セラミックス部材で構成されるた
め、金属発熱体には見られない特性を示す。
Since silicon carbide heating elements are composed of ceramic members, they exhibit characteristics not found in metal heating elements.

例えば、炭化ケイ素発熱体は室温から700℃まで負の
温度係数を示し、それより高温域では正の温度係数をも
つ特性を有しており、正の温度係数領域である700℃
以上での使用が望ましい。炭化ケイ素は、雰囲気に対し
ては、比較的安定であるが水蒸気やアルカリ蒸気には、
弱く発熱体の寿命を短くする原因となる。炭化ケイ素発
熱体においては発熱部の表面に各種セラミック材料の被
覆がなされてきている。
For example, a silicon carbide heating element exhibits a negative temperature coefficient from room temperature to 700°C, and has a positive temperature coefficient in the higher temperature range;
Use above is recommended. Silicon carbide is relatively stable in the atmosphere, but is sensitive to water vapor and alkali vapor.
It is weak and causes shortening of the life of the heating element. In silicon carbide heating elements, the surface of the heating part has been coated with various ceramic materials.

ニューセラミックス製品や電子部品では製造条件が非常
にきびしく、特に焼成炉においては、炉内温度分布が細
かく制御できることが要求されている。炭化ケイ素発熱
体を熱源とする電気抵抗炉においては、炉内幅方向の温
度分布が問題となった。すなわち、いかに均一な表面温
度を有する発熱体を使用しても、炉の側壁からの熱放散
によって炉内の中央部から側壁に向かって温度降下する
ため、焼成条件のきびしいセラミックスの焼成等におい
ては、焼成位置の差によって焼きムラや収縮ムラが生じ
、歩留りが悪く温度分布の改善が望まれていた。
The manufacturing conditions for new ceramic products and electronic components are very strict, and especially in firing furnaces, it is required to be able to finely control the temperature distribution inside the furnace. In electric resistance furnaces that use silicon carbide heating elements as a heat source, temperature distribution in the width direction within the furnace has become a problem. In other words, no matter how uniform a heating element with a surface temperature is used, the temperature drops from the center of the furnace toward the side walls due to heat dissipation from the side walls of the furnace. However, due to differences in firing positions, uneven baking and shrinkage occur, leading to poor yields and improvements in temperature distribution have been desired.

12 、 〔発明が解決しようとする問題点〕 上述の改善方法として、実公昭48−22750にて、
抵抗値の異なるものを任意に接続して、発熱部を形成せ
しめ、温度分布を変えようとするものが提案されている
12. [Problems to be solved by the invention] As an improvement method for the above, Publication of Utility Model Publication No. 48-22750,
It has been proposed to arbitrarily connect elements with different resistance values to form a heat generating part and change the temperature distribution.

上述の方法は、炉内の温度分布を改善する方法としては
、有効な手段であるが、しかし、大きな欠点を有してい
た。すなわち、抵抗値の異なる発熱体を接合するため(
乙接合部分が炉内に入ること、更に発熱部同士の接合の
ため、接合部分の強度劣化、酸化が著しく、発熱体の寿
命が短いこと、加えて製造上においては、抵抗値の異な
る発熱体の製作やそれらを組み合わせて接合するために
作業工数が長くなり、作業性やコストの面で不利である
ことである。
Although the above-mentioned method is an effective means for improving the temperature distribution within the furnace, it has a major drawback. In other words, in order to join heating elements with different resistance values (
Because the joint part enters the furnace, and because the heat generating parts are joined together, the strength of the joint part deteriorates significantly, oxidation occurs, and the life of the heating element is short.In addition, during manufacturing, heating elements with different resistance values are used. The number of man-hours involved in manufacturing and combining and joining them increases, which is disadvantageous in terms of workability and cost.

本発明の目的は、炉内温度の温度分布改善方法においで
比較的容易にしかも安価に温度分布を改善できる発熱体
を提供することにある。
An object of the present invention is to provide a heating element that can relatively easily and inexpensively improve the temperature distribution in a method for improving the temperature distribution in a furnace.

〔問題点を解決するための手段〕[Means for solving problems]

すなわち、本発明は、炭化ケイ素発熱体において、発熱
部の一部に炭化ケイ素と輻射率の異なる一種以上のセラ
ミック材料を被覆することを特徴とする。
That is, the present invention is characterized in that, in a silicon carbide heating element, a part of the heat generating part is coated with one or more types of ceramic material having a different emissivity from silicon carbide.

従来、炉用レンガ等は、その色(黒度)によって輻射率
が変わることが知られている。一般に高温域では、被熱
物への伝熱は主としで、輻射による。輻射熱は、ステフ
ァンボルツマンの法則から、材料の黒度の影響が大きく
、発熱体の場合には、黒い表面が好ましい。
It has been known that the emissivity of furnace bricks and the like varies depending on their color (blackness). Generally, in high-temperature ranges, heat is primarily transferred to the heated object through radiation. According to Stefan Boltzmann's law, radiant heat is greatly influenced by the blackness of the material, and in the case of a heating element, a black surface is preferable.

しかし、電気炉等の炉壁に使用される耐火材においては
、逆に受熱量を少なくして、省エネを図ることが検討さ
れ、黒度の低いものが多用されることから、発熱体の表
面温度を任意に変える方法を検討した結果、発熱部の表
面に炭化ケイ素と輻射率cQ%な6セラミツク材料を被
覆することによって発散する輻射熱量を制御できること
が判明した。
However, when it comes to refractory materials used for the walls of electric furnaces, etc., it is being considered to conversely reduce the amount of heat received in order to save energy, and materials with a low degree of blackness are often used, so the surface of the heating element As a result of examining methods for arbitrarily changing the temperature, it was found that the amount of radiant heat dissipated could be controlled by coating the surface of the heat generating part with silicon carbide and a 6-ceramic material with an emissivity of cQ%.

すなわち、炭化ケイ素の輻射率は、一般に0871程度
であるが、例えは発熱部の表面を部分的に輻射率の低い
もので被覆すれば、被覆された表面近傍は温度が低下す
る。その結果炉内温度分布の均一化を達成できる。
That is, although the emissivity of silicon carbide is generally about 0.871, for example, if the surface of the heat generating part is partially coated with a material having a low emissivity, the temperature near the coated surface will decrease. As a result, uniform temperature distribution within the furnace can be achieved.

〔実施例1〕 直径25 mm、発熱部長300mm、端部長300m
mの棒状の炭化ケイ素発熱体で、第1図に示すように発
熱部1の中央部に白色のムライト質(輻射率ε= 0.
4 )のコート材を施行した被覆域3を75ynm形成
し、該被覆域3の両側に未被覆域4からなる発熱部1と
両端子部2及び電極部5からなる炭化ケイ素発熱体を電
気容量15Kw、炉内寸法中300mm、奥行600m
m、高さ120mmの電気炉に6本設置した該電気炉の
炉内の設定温度を1200℃にし、通電発熱させ昇温後
1時間保持し、炉内温度分布を測定した。測定にあたっ
ては第3図に示すように、該発熱体の下方75 mmの
位置に熱電対を設置し、炉内巾方向の5点の温度を測定
した。測定結果を表1に示す。
[Example 1] Diameter 25 mm, heat generating section 300 mm, end section 300 m
m rod-shaped silicon carbide heating element, as shown in FIG. 1, a white mullite substance (emissivity ε=0.
4) A covering area 3 of 75 yn thickness is formed using the coating material, and on both sides of the covering area 3, a silicon carbide heating element consisting of a heating part 1 consisting of an uncoated area 4, both terminal parts 2, and an electrode part 5 is attached with an electric capacity. 15Kw, inner furnace dimensions 300mm, depth 600m
The temperature inside the electric furnace was set to 1200° C., and the temperature was maintained for 1 hour after the temperature was raised by electricity, and the temperature distribution inside the furnace was measured. In the measurement, as shown in FIG. 3, a thermocouple was installed at a position 75 mm below the heating element, and the temperature was measured at five points in the width direction of the furnace. The measurement results are shown in Table 1.

〔実施例2〕 第2図に示すU型炭化ケイ素発熱体直径20mm、発熱
部長300 mm、端部長300mm、発熱部のピッチ
50mmのものを4本上記の実施例1と同じ電気炉に設
置した。該U型炭化ケイ素発熱体の発熱部の一部(発熱
部の中心部より若干先端部よりの位置)に75 mm巾
の輻射率ε−0,4のムライト質の被覆を施しているも
のであった。炉内温度1200℃の炉内温度分布を実施
例1と同一の方法で測定した結果を表1に示す。
[Example 2] Four U-shaped silicon carbide heating elements shown in Fig. 2 with a diameter of 20 mm, a heat generating part of 300 mm, an end part of 300 mm, and a pitch of heat generating parts of 50 mm were installed in the same electric furnace as in Example 1 above. . A part of the heat generating part of the U-type silicon carbide heating element (a position slightly closer to the tip than the center of the heat generating part) is coated with mullite having a width of 75 mm and an emissivity of ε-0.4. there were. Table 1 shows the results of measuring the temperature distribution in the furnace at a temperature of 1200°C using the same method as in Example 1.

〔比較例1〕 実施例1と同じ棒状炭化ケイ素発熱体でムライト質の被
覆を施していないものを同一の電気炉にて、炉内温度分
布を測定した。測定結果を表1に示す。
[Comparative Example 1] The same rod-shaped silicon carbide heating element as in Example 1, but not coated with mullite, was used in the same electric furnace to measure the temperature distribution inside the furnace. The measurement results are shown in Table 1.

〔比較例2〕 実施例2と同じU型炭化ケイ素発熱体でムライト質の被
覆を施していないものを同一の電気炉を用いて、炉内温
度分布を測定した。
[Comparative Example 2] The same U-type silicon carbide heating element as in Example 2, but not coated with mullite, was used in the same electric furnace to measure the temperature distribution inside the furnace.

測定結果を表1に示す。The measurement results are shown in Table 1.

〔比較例3〕 実施例1と同一寸法同材質の炭化ケイ素発熱体ニムライ
ト質の代わりに黒色のクロム系コート(輻射率ε−0,
9)を発熱部中央75順巾に施行した。
[Comparative Example 3] A silicon carbide heating element having the same dimensions and the same material as in Example 1. Instead of the Nimlite material, a black chromium-based coating (emissivity ε-0,
9) was applied to the central 75-width area of the heat-generating area.

上記のクロム系コートは、炭化ケイ素とほぼ同一の輻射
率をもっていた。実施例1と同様に炉内温度分布を測定
した。
The chromium-based coat described above had approximately the same emissivity as silicon carbide. The temperature distribution in the furnace was measured in the same manner as in Example 1.

測定結果を表1に示す。The measurement results are shown in Table 1.

本発明の炭化ケイ素発熱体は、実施例に示したように、
従来品では、10℃以上あった炉内温度差を±2℃以内
に改善することができた。実施例では、発熱体の1ケ所
にコートを施工したが、使用目的によっては複数ケ所の
施工も容易である。
The silicon carbide heating element of the present invention, as shown in the examples,
In the conventional product, the temperature difference inside the furnace, which was 10°C or more, could be reduced to within ±2°C. In the example, the coating was applied to one location on the heating element, but depending on the purpose of use, it is easy to apply the coating to multiple locations.

〔発明の効果〕〔Effect of the invention〕

本発明の炭化ケイ素発熱体を用いることによっで、従来
できなかった焼成、たとえば、上下限許容温度のきびし
いセ”>ミックスの焼成が可能となり、焼成ムラや収縮
ムラを防止できた。
By using the silicon carbide heating element of the present invention, it became possible to perform firing that could not be done conventionally, for example, firing a mix with strict upper and lower allowable temperature limits, and it was possible to prevent uneven firing and shrinkage.

また同時複列焼成も可能になり、処理物の品質安定量産
化が図れるという効果もある。
Moreover, simultaneous double-row firing is possible, which has the effect of achieving mass production with stable quality of processed materials.

本発明は、近年高精度、とりわけ温度分布の精度が要求
されているセラミックスや金属の加熱炉の分野において
大きな効果が期待でき、産業上のメリットははかりしれ
ないイ、のかある。
The present invention can be expected to have great effects in the field of heating furnaces for ceramics and metals, where high precision, especially precision in temperature distribution, is required in recent years, and the industrial benefits are immeasurable.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、本発明の炭化ケイ素発熱体の一実施例を示す
正面図である。第2図は、本発明の炭化ケイ素発熱体の
他の実施例を示す平面図である。 第3図は、実施例における炉内の温度の測定位置を示す
断面図である。 ■−−−−発熱部 2−一〜一端子部 3−−一被覆域 4−一一一末被覆域 5−−m−電極部 第  1  凶 第2図 第  3  図
FIG. 1 is a front view showing one embodiment of the silicon carbide heating element of the present invention. FIG. 2 is a plan view showing another embodiment of the silicon carbide heating element of the present invention. FIG. 3 is a sectional view showing the temperature measurement position in the furnace in the example. ■---Heating part 2-1 to 1 terminal part 3--1 covering area 4-11 terminal covering area 5--m-electrode part 1st figure 2nd figure 3rd figure

Claims (1)

【特許請求の範囲】[Claims] 各種工業炉の加熱源として、使用される炭化ケイ素発熱
体において、該炭化ケイ素発熱体の発熱部表面の一部に
炭化ケイ素と輻射率の異なる一種以上のセラミック材料
を被覆することを特徴とする炭化ケイ素発熱体。
A silicon carbide heating element used as a heating source for various industrial furnaces is characterized in that a part of the surface of the heating part of the silicon carbide heating element is coated with one or more ceramic materials having a different emissivity from silicon carbide. Silicon carbide heating element.
JP60171109A 1985-08-05 1985-08-05 Silicon carbide heat generating body Pending JPS6231982A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60171109A JPS6231982A (en) 1985-08-05 1985-08-05 Silicon carbide heat generating body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60171109A JPS6231982A (en) 1985-08-05 1985-08-05 Silicon carbide heat generating body

Publications (1)

Publication Number Publication Date
JPS6231982A true JPS6231982A (en) 1987-02-10

Family

ID=15917136

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60171109A Pending JPS6231982A (en) 1985-08-05 1985-08-05 Silicon carbide heat generating body

Country Status (1)

Country Link
JP (1) JPS6231982A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05141875A (en) * 1991-11-20 1993-06-08 Murata Mfg Co Ltd Furnace heater

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05141875A (en) * 1991-11-20 1993-06-08 Murata Mfg Co Ltd Furnace heater

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