JPS6232154B2 - - Google Patents

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Publication number
JPS6232154B2
JPS6232154B2 JP52051384A JP5138477A JPS6232154B2 JP S6232154 B2 JPS6232154 B2 JP S6232154B2 JP 52051384 A JP52051384 A JP 52051384A JP 5138477 A JP5138477 A JP 5138477A JP S6232154 B2 JPS6232154 B2 JP S6232154B2
Authority
JP
Japan
Prior art keywords
diamond
sintered body
aln
aluminum nitride
powder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52051384A
Other languages
Japanese (ja)
Other versions
JPS53136013A (en
Inventor
Akio Hara
Shuji Yatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP5138477A priority Critical patent/JPS53136013A/en
Publication of JPS53136013A publication Critical patent/JPS53136013A/en
Publication of JPS6232154B2 publication Critical patent/JPS6232154B2/ja
Granted legal-status Critical Current

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

本発明は、ヒートシンク用焼結体およびの製造
方法に関するものである。 近年、高電界や大電流密度のもので使用される
半導体デバイスが実用化され、特に半導体レーザ
ー、インパツトの如くその能動領域での電力消費
密度が大きいのでは、素子の発熱量が大であるた
めデバイスの温度上昇を防ぐ種類の工夫が必要で
ある。このための材料として高熱伝導度を有する
ヒートシンクとなる材料が注目されている。第1
表に現在半導体デバイスのヒートシンクとして使
用されているCuやダイヤモンドと共に各種の単
結晶材料の常温における熱伝導度を示した。ダイ
ヤモンドは結晶性や不純物の含有量により、いく
つかの種類に分類される。この中で特にa型の
ものは常温近辺で現存する材料の中では最も熱伝
導の高い材料である。しかし天然のa型ダイヤ
モンドは産出量が極めて少ない。また半導体デバ
イスとして使用する為には一定の大きさや厚みが
必要であり、天然の不規則形状のものを加工する
となると極めて高価なものになる。BeOは酸化物
の中で最も熱伝導度の高いものであるが、人体に
対して毒性を有するという欠点がある。Cuは安
価でヒ
The present invention relates to a sintered body for a heat sink and a method for manufacturing the same. In recent years, semiconductor devices used in high electric fields and large current densities have been put into practical use, and especially in devices such as semiconductor lasers and impact devices, where the power consumption density in the active region is high, the amount of heat generated by the device is large. It is necessary to take some kind of measure to prevent the temperature of the device from rising. As a material for this purpose, materials that can be used as heat sinks and have high thermal conductivity are attracting attention. 1st
The table shows the thermal conductivity at room temperature of various single crystal materials, including Cu and diamond, which are currently used as heat sinks in semiconductor devices. Diamonds are classified into several types depending on their crystallinity and impurity content. Among these, the a-type material in particular has the highest thermal conductivity among existing materials at around room temperature. However, the production of natural A-type diamonds is extremely small. In addition, in order to use it as a semiconductor device, it must have a certain size and thickness, and processing a naturally irregularly shaped one would be extremely expensive. Although BeO has the highest thermal conductivity among oxides, it has the disadvantage of being toxic to the human body. Cu is cheap and

【表】【table】

【表】 ートシンクとして使用されている半導体デバイス
では電極のAu,Pt中での拡散が早い為に素子の
寿命を短かくするという欠点がある。第1表に示
した材料の中でダイヤモンドは立方晶型BNと並
んで高熱伝導度を有しており、ヒートシンク材料
として注目される。ダイヤモンド単結晶をヒート
シンク材料として用いることは一部なされている
が、その第一の欠点は高価格であることである。
これを焼結して多結晶体とし、一定の形状大きさ
のものが安く作成できればヒートシンクとして有
望な材料となろう。発明者等はこのような観点か
らダイヤモンドの焼結体について種々試作を行な
つた。ダイヤモンドは最高硬度の物質であり、純
粋なダイヤモンドのみからなる完全にち密な焼結
体を得ることは極めて困難である。近い将来にお
いて純粋なダイヤモンドのみからなる焼結体が工
業的に作りだされることはありえないと考えられ
る。と言うのは工業的に許容出来ないような高
圧、高温をそれに要求されるからであり、焼結用
装置に使われる材料の画期的改良がそのためには
必要である。 上記に鑑み本発明は開発されたものである。即
ち本発明のヒートシンク用焼結体は、ダイヤモン
ドを体積で全体の90〜40%含有し、残部が主とし
て窒化アルミニウムからなり、ダイヤモンド安定
域で焼結されてなることを特徴とするものであ
る。 又本発明のヒートシンク用焼結体の製造方法
は、ダイヤモンド粉末と酸素含有量が重量で1%
以下の窒化アルミニウム粉末を主体とした粉末を
混合し、これを粉末状でもしくは型押成型后、超
高圧装置を用いて、高圧、高温下で焼結せしめる
ことを特徴とするダイヤモンドを体積で全体の90
〜40%含有し、残部が主として窒化アルミニウム
からなることを特徴とするものである。 発明者等は前記のようにダイヤモンドのみの焼
結体の製造上の困難さを解決する方法としてダイ
ヤモンドと熱伝導度の優れた他の物質を混合して
焼結性を改良することを試みた。ダイヤモンドと
組合す物質としては第1表に熱伝導度を示した
AlNを選択した。AlNはBeOに近い熱伝導度を有
するとされ、単独でもヒートシンクとしての用途
が期待されている材料である。ダイヤモンドと
AlNの複合焼結体でち密なものが得られれば更に
優れたものが得られるはずである。 本発明による焼結体においてはダイヤモンドの
混合量は体積で全体の90〜40体積%である場合が
望ましい。AlNの添加量が体積で10%未満では焼
結性改善の効果が充分でない。また複合材料の熱
伝導度はその体積混合割合及び組織によつて左右
され、ダイヤモンド量が40体積%未満ではダイヤ
モンドの高熱伝導性が充分発揮されず焼結体の熱
伝導度はAlNの値に近いものとなる。 本発明の焼結体の製造方法としてはダイヤモン
ド粉末と酸素含有量の少ないAlN粉末を所定の割
合に混合し、これを型押成型后もしくは粉状で黒
鉛もしくは金属等の容器につめ、真空炉中で高温
に加熱して粉末の含有するガスを除去した后、ベ
ルト型、ガードル型等の超高圧装置内に装入して
高圧、高温下で焼結する。発熱体には黒鉛円筒を
用い、その中にタルク、NaCl等の絶縁物をつめ
て焼結するダイヤモンド混合粉末の容器を包む。
黒鉛発熱体の周囲にはパイロフエライト等の圧力
媒体を置く、焼結する圧力、温度条件は第1図に
示したダイヤモンドの安定領域内で行なうことが
望ましいが、この平衡線は必ずしも正確には分つ
ておらず、一つの目安にすぎない。なお第1図中
Aはダイヤモンド安定域、Bは黒鉛安定域を夫々
示している。 本発明によるダイヤモンドにAlNを加えた複合
焼結体でダイヤモンドの焼結性が改善される理由
として考えられることは次の点である。 AlNはダイヤモンドに比較して剛性率が低く、
剛性率をGとした場合τmax=G/30で示される理論 的剪断強度は約500Kg/mm2である。本発明の焼結
体を製造するに当つて50Kbの圧力下で行なつた
とすると、これはAlNの理論的剪断強度とほぼ等
しく、AlN粒子はこのような高圧下では容易に変
形流動し得ることになる。従つてAlN粒子がダイ
ヤモンドと混合された状態で加圧されるとAlN粒
子が先に外圧により変形流動してダイヤモンド粒
子への圧力伝達が均一に行なわれ易くなると考え
られる。以上述べた理由によりダイヤモンドと
AlNの組合せではダイヤモンド単独の場合に比較
して焼結性が改善される。このようなAlNの混合
効果は前述の如くAlNの添加量が体積で10%以上
で明らかに認められるが、更に添加量が20%以上
ではダイヤモンド個々の粒子間へのAlNの侵入が
確実に生じ、その効果は顕著である。またこの場
合は焼結体組織上でもAlNがダイヤモンドの結合
相として連続した組織を有したものとなる。 本発明に使用するAlN原料は不純物としての酸
素含有量ができるだけ少ないものであることが必
要である。AlN中の酸素はAlN自体の熱伝導度を
低下せしめると共に、ダイヤモンドとの焼結性を
も阻害する。実験の結果使用するAlNの酸素含有
量が重量で1%を越えると焼結体の熱伝導度も大
きく低下することが明らかとなつた。 なお、本発明焼結体中には焼結体の熱伝導度を
著しく低下せしめない範囲で比較的熱伝導の高い
AlN以外の化合物、例えばSiC,WC,B4C等、ま
たは金属のMo,W,Ta,Nbや少量のFe,Co,
Ni,Cu,Mnを含むものであつても良い。 以下実施例について述べる。 実施例 1 平均粒度15μの研削用の人工ダイヤモンド粉末
と平均粒度5μのAlN粉末を体積で各々80、20%
の割合に配合し、V型ブレンダーを用いて混合し
た。使用したAlN粉末は純度99.99%の純Al粉末
を高純度のN2ガス中で窒化して得たもので、酸
素分析値は0.5%であつた。この混合粉末にカン
フアーを2%添加し、1ton/cm2の圧力で外径10mm
厚を1.5mmに型押成型した。型押体をステンレス
製の容器に入れ、真空炉中で10-5mmHgの真空下
で1100℃に加熱し脱ガス処理を行なつた。これを
ガードル型超高圧装置に装入し、60Kbの圧力で
1300℃に加熱し、20分間保持后温度を下げ、圧力
を徐々に下げた。得られた焼結体は外径約10mm、
厚さ約1mmのものである。尚比較の為に同じダイ
ヤモンド原料を用いてAlNを添加せず、ダイヤモ
ンド100%のものを60Kb、1600℃で20分間保持し
て焼結した。本発明のAlNを添加した焼結体はち
密な焼結体となつており、X線回折により調べた
ところダイヤモンドとAlN以外は検出されなかつ
たが、ダイヤモンド100%の方は充分焼結してお
らず、X線回折では微量の黒鉛が検出された。本
発明の焼結体の上、下面をダイヤモンド砥石を用
いて平面研摩して、電子ビームを熱源とした定常
状態における温度勾配法を用いて熱伝導度を測定
した結果、1.5cal/cm.sec.℃の測定値が得られ
た。 実施例 2 実施例1に用いた原料と同一原料を用いて第2
表に示した組成に各々粉末を配合した。以下実施
例1と同様にして焼結体を作成し、熱伝導度を測
定した。結果は第2表に示した。
[Table] Semiconductor devices used as heat sinks have the disadvantage of shortening the life of the device due to rapid diffusion in the Au and Pt electrodes. Among the materials shown in Table 1, diamond has high thermal conductivity, along with cubic BN, and is attracting attention as a heat sink material. Although some efforts have been made to use single crystal diamond as a heat sink material, its primary drawback is its high cost.
If this could be sintered into a polycrystalline material and made into a certain shape and size at low cost, it would be a promising material for heat sinks. From this point of view, the inventors have made various prototypes of diamond sintered bodies. Diamond is the hardest substance, and it is extremely difficult to obtain a completely dense sintered body made of pure diamond. It is considered impossible that a sintered body made only of pure diamond will be produced industrially in the near future. This is because high pressures and temperatures that are industrially unacceptable are required, and revolutionary improvements in the materials used in sintering equipment are necessary for this purpose. The present invention has been developed in view of the above. That is, the sintered body for a heat sink of the present invention is characterized in that it contains 90 to 40% diamond by volume, with the remainder mainly consisting of aluminum nitride, and is sintered in the diamond stability range. In addition, the method for manufacturing a sintered body for a heat sink of the present invention is such that the diamond powder and oxygen content are 1% by weight.
Diamond is made by mixing the following powders mainly consisting of aluminum nitride powder, molding the mixture in powder form or by molding, and then sintering it under high pressure and high temperature using ultra-high pressure equipment. 90 of
~40%, with the remainder mainly consisting of aluminum nitride. As mentioned above, the inventors attempted to improve the sinterability by mixing diamond with other materials with excellent thermal conductivity as a way to solve the difficulties in manufacturing a sintered body made only of diamond. . Table 1 shows the thermal conductivity of materials that can be combined with diamond.
I chose AlN. AlN is said to have a thermal conductivity close to that of BeO, and is a material that is expected to be used alone as a heat sink. with diamonds
If a dense AlN composite sintered body can be obtained, an even better product should be obtained. In the sintered body according to the present invention, the amount of diamond mixed is preferably 90 to 40% by volume of the total. If the amount of AlN added is less than 10% by volume, the effect of improving sinterability is not sufficient. In addition, the thermal conductivity of a composite material is influenced by its volumetric mixing ratio and structure, and if the amount of diamond is less than 40% by volume, the high thermal conductivity of diamond will not be fully exhibited, and the thermal conductivity of the sintered body will be the same as that of AlN. It will be close. The method for manufacturing the sintered body of the present invention is to mix diamond powder and AlN powder with a low oxygen content in a predetermined ratio, press the mixture or fill it in powder form in a container made of graphite or metal, and then heat it in a vacuum furnace. After the powder is heated to a high temperature to remove the gas contained in the powder, it is charged into an ultra-high pressure device such as a belt type or girdle type and sintered under high pressure and high temperature. A graphite cylinder is used as the heating element, and an insulating material such as talc or NaCl is packed inside the cylinder, which encloses a container of diamond mixed powder to be sintered.
It is desirable to place a pressure medium such as pyroferite around the graphite heating element, and to set the pressure and temperature conditions for sintering within the diamond stability region shown in Figure 1, but this equilibrium line is not necessarily accurate. It is not fully understood and is only a guideline. In FIG. 1, A indicates the diamond stability region, and B indicates the graphite stability region. The following points are considered to be the reasons why the sinterability of diamond is improved in the composite sintered body in which AlN is added to diamond according to the present invention. AlN has a lower rigidity than diamond,
When the rigidity is G, the theoretical shear strength expressed by τmax=G/30 is about 500 Kg/mm 2 . If the sintered body of the present invention is manufactured under a pressure of 50 Kb, this is approximately equal to the theoretical shear strength of AlN, and AlN particles can easily deform and flow under such high pressure. become. Therefore, it is thought that when AlN particles are mixed with diamond and pressurized, the AlN particles are first deformed and flowed by the external pressure, making it easier to uniformly transmit pressure to the diamond particles. For the reasons mentioned above, diamond
The combination of AlN improves sinterability compared to the case of diamond alone. As mentioned above, such a mixing effect of AlN is clearly observed when the amount of AlN added is 10% or more by volume, but if the amount added is more than 20%, AlN definitely invades between individual diamond particles. , the effect is remarkable. In this case, the sintered body also has a continuous structure in which AlN acts as a bonding phase for diamond. The AlN raw material used in the present invention needs to have as little oxygen content as an impurity as possible. Oxygen in AlN reduces the thermal conductivity of AlN itself and also inhibits sinterability with diamond. As a result of experiments, it became clear that when the oxygen content of the AlN used exceeds 1% by weight, the thermal conductivity of the sintered body decreases significantly. In addition, the sintered body of the present invention contains a material having relatively high thermal conductivity within a range that does not significantly reduce the thermal conductivity of the sintered body.
Compounds other than AlN, such as SiC, WC, B 4 C, etc., or metals such as Mo, W, Ta, Nb, and small amounts of Fe, Co,
It may also contain Ni, Cu, and Mn. Examples will be described below. Example 1 Artificial diamond powder for grinding with an average particle size of 15μ and AlN powder with an average particle size of 5μ are 80% and 20% by volume, respectively.
and mixed using a V-type blender. The AlN powder used was obtained by nitriding pure Al powder with a purity of 99.99% in high purity N 2 gas, and the oxygen analysis value was 0.5%. 2% camphor was added to this mixed powder, and the outer diameter was 10mm under a pressure of 1ton/ cm2.
It was molded to a thickness of 1.5 mm. The stamped body was placed in a stainless steel container and heated to 1100°C under a vacuum of 10 -5 mmHg in a vacuum furnace to perform degassing treatment. This is charged into a girdle-type ultra-high pressure device, and at a pressure of 60Kb.
After heating to 1300°C and holding for 20 minutes, the temperature was lowered and the pressure was gradually lowered. The obtained sintered body has an outer diameter of approximately 10 mm,
It is approximately 1mm thick. For comparison, a 100% diamond material without AlN was sintered at 60 Kb and held at 1600°C for 20 minutes using the same diamond raw material. The AlN-added sintered body of the present invention is a dense sintered body, and when examined by X-ray diffraction, nothing other than diamond and AlN was detected, but the 100% diamond one was sufficiently sintered. However, trace amounts of graphite were detected by X-ray diffraction. The upper and lower surfaces of the sintered body of the present invention were flat-polished using a diamond grindstone, and the thermal conductivity was measured using a steady-state temperature gradient method using an electron beam as a heat source.As a result, the thermal conductivity was 1.5 cal/cm. A measurement value of sec.°C was obtained. Example 2 Using the same raw materials as those used in Example 1, a second
Each powder was blended into the composition shown in the table. Thereafter, a sintered body was prepared in the same manner as in Example 1, and its thermal conductivity was measured. The results are shown in Table 2.

【表】【table】 【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の焼結体の製造条件に関するも
のでダイヤモンドの圧力、温度相図上での安定存
在領域を示すものである。 A……ダイヤモンド安定域、B……黒鉛安定
域。
FIG. 1 relates to the manufacturing conditions of the sintered body of the present invention and shows the stable existence region on the pressure and temperature phase diagram of diamond. A...Diamond stability area, B...Graphite stability area.

Claims (1)

【特許請求の範囲】 1 ダイヤモンドを体積で全体の90〜40%含有
し、残部が主として窒化アルミニウムからなり、
ダイヤモンド安定域で焼結されてなることを特徴
とするヒートシンク用焼結体。 2 ダイヤモンドの含有量が体積で全体の90〜40
%で、且窒化アルミニウムを主とした結合相が焼
結体中で連続した組織を有する特許請求の範囲第
1項記載の焼結体。 3 ダイヤモンド粉末と酸素含有量が重量で1%
以下の窒化アルミニウム粉末を主体とした粉末を
混合し、これを粉末状でもしくは型押成型后、超
高圧装置を用いて、高圧、高温下で焼結せしめる
ことを特徴とするダイヤモンドを体積で全体の90
〜40%含有し、残部が主として窒化アルミニウム
からなることを特徴とするヒートシンク用焼結体
の製造方法。
[Claims] 1 Contains 90 to 40% of the total diamond by volume, and the remainder mainly consists of aluminum nitride,
A sintered body for a heat sink characterized by being sintered in the diamond stability range. 2 Diamond content is 90 to 40 of the total volume
%, and the binder phase mainly composed of aluminum nitride has a continuous structure in the sintered body. 3 Diamond powder and oxygen content 1% by weight
Diamond is made by mixing the following powders mainly consisting of aluminum nitride powder, molding the mixture in powder form or by molding, and then sintering it under high pressure and high temperature using ultra-high pressure equipment. 90 of
A method for producing a sintered body for a heat sink, characterized in that the aluminum nitride contains aluminum nitride by 40% and the remainder mainly consists of aluminum nitride.
JP5138477A 1977-05-04 1977-05-04 Sintered material for heat sink and method of its manufacture Granted JPS53136013A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5138477A JPS53136013A (en) 1977-05-04 1977-05-04 Sintered material for heat sink and method of its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5138477A JPS53136013A (en) 1977-05-04 1977-05-04 Sintered material for heat sink and method of its manufacture

Publications (2)

Publication Number Publication Date
JPS53136013A JPS53136013A (en) 1978-11-28
JPS6232154B2 true JPS6232154B2 (en) 1987-07-13

Family

ID=12885442

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5138477A Granted JPS53136013A (en) 1977-05-04 1977-05-04 Sintered material for heat sink and method of its manufacture

Country Status (1)

Country Link
JP (1) JPS53136013A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58168144U (en) * 1982-05-01 1983-11-09 株式会社テクニスコ Heat dissipation board
JPH069188B2 (en) * 1985-04-30 1994-02-02 住友電気工業株式会社 Compound semiconductor substrate
JPS62297299A (en) * 1986-06-16 1987-12-24 Kobe Steel Ltd Diamond radiator
JP2799688B2 (en) * 1995-05-31 1998-09-21 セイコー精機株式会社 heatsink

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3761783A (en) * 1972-02-02 1973-09-25 Sperry Rand Corp Duel-mesa ring-shaped high frequency diode
JPS5849510B2 (en) * 1973-06-30 1983-11-04 株式会社東芝 Chitsuka Aluminum Shouketsutaino

Also Published As

Publication number Publication date
JPS53136013A (en) 1978-11-28

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