JPS6232332A - Verification method and device for pressure detection element - Google Patents

Abstract

PURPOSE:To test quickly and exactly the characteristic of a semiconductor pressure detecting element, as it is in a wafer state, by executing a pressure calibrating process, and thereafter, executing repeatedly a testing process consisting of a probe contact process, a pressure applying process and a pressure characteristic measuring process, to each pressure detecting element which is formed on the wafer. CONSTITUTION:A testing device is constituted of a stage part 22 for fixing a semiconductor crystal wafer, a calibration use pressure detecting element 24, a pressure injecting nozzle 30, a probe 32, a prober driving device 40, a pressure control device 42, and an operation controlling circuit 48 consisting of a pressure calibrating circuit, a test element switching controlling circuit 56 and a pressure characteristic measuring circuit 58. In such a state, a testing pressure to be applied to a wafer is applied in advance to the calibration use pressure detecting element 24, its value is calibrated to a prescribed value, thereafter, the calibrated testing pressure is applied to the wafer, and to each pressure detecting element which is formed on the wafer, a testing process consisting of a probe contact process, a pressure applying process and a pressure characteristic measuring process is executed repeatedly, and a characteristic of each pressure detecting element is measured quickly and exactly.

Description

[Detailed Description of the Invention] "Industrial Application Field" The present invention relates to a method and apparatus for testing pressure sensing elements, particularly for testing the characteristics of each pressure sensing element formed on a semiconductor crystal wafer while the wafer remains in its state. The present invention relates to an improved method and device for verifying a pressure detection element.

[Prior Art] Today, fluid measurement is carried out in various fields, from large-scale applications such as oil plants and power generation equipment to hydraulic control of automobiles, combustion equipment, and more familiar applications such as household electrical appliances and medical equipment. It is widely used in various fields ranging from equipment to equipment.

Such fluid measurement is generally performed mainly on the measurement of fluid pressure and flow rate, and in recent years flow sensors and pressure sensors that perform such measurements have become smaller, more reliable, and less expensive. Demand is increasing.

Various types of semiconductor pressure detection elements have been used as pressure sensors that satisfy these requirements.As such semiconductor pressure detection elements, there are a capacitance type as shown in FIG. The type of strain gauge not shown in Figure 8 (C) is well known.

The capacitance type semiconductor pressure sensing element 100 shown in FIG. 8(B) has a thin diaphragm 10 formed by counterboring its central portion from the real surface side using well-known semiconductor microfabrication technology. It is formed by providing an electrode 12 on the back surface of 10.

Further, the semiconductor pressure sensing element 100 shown in FIG. 8(C) as a strain gauge has a diaphragm 10 of N! S28 i
It is formed by using a crystal plate and installing a P-type strain resistance gauge in which boron is diffused as an impurity near the boundary between the center and the periphery.

By the way, each of the semiconductor pressure sensing elements 100 is generally manufactured by taking advantage of the characteristics of semiconductor processing technology such as high integration, high reliability, and mass production. ＞, a large number of pressure sensing element chips are formed on one silicon wafer 200, and J
3. Then, this wafer 200 is cut into individual chips.

Here, the monthly interest rate of the pressure sensing element 100 is 3
Semiconductor single crystals such as i are chemically stable, have good elasticity against external stress and strength comparable to steel, and have optimal mechanical properties as strain-generating bodies. In addition, the semiconductor single crystal has excellent characteristics in that there are few errors due to creep and hysteresis, and there is almost no vibration or change over time.

Conventionally, in the past, when testing a pressure sensing element formed using this type of semiconductor single crystal, the electrical characteristics of the element were first measured in the wafer state using a hub bar, which is used as a semiconductor testing device. Line 4 is coming. As a result, in the pressure sensor t± of the kV resistance type, the state of electrode formation is inspected based on the measured electrical characteristics, and in the pressure sensor V of the strain resistance gauge type, the gauge resistance is determined based on the measured electrical characteristics.
Characteristics such as offset voltage and rectification will be tested.

The pressure sensor chips that have passed the inspection using the wafer proper are then cut from the wafer and taken out as individual pressure sensor chips, and placed on a pressure sensor verification jig as shown in Figure 8 (D). A pressure verification test as a mounted pressure sensor or a housing is performed.

This pressure verification test varies depending on the accuracy required of the pressure sensing element, from a precise verification method that simply determines whether it will work as a pressure sensor, to a verification method that performs high-precision compensation and calibration. There are methods.

[Problems to be Solved by the Invention] However, in any case, the conventional pressure verification test is performed individually on each conductor pressure detection element separated from the wafer, and is performed in the wafer state. Therefore, there is a problem in that it becomes an impediment to increasing the mass productivity, reliability, and degree of integration of the pressure sensing element.

In other words, in the conventional pressure verification test, each pressure detection element separated from the wafer is individually performed.
The test requires a large amount of time and power, and even if five pressure sensing elements are produced from a wafer during the manufacturing process, mass productivity and economic efficiency are compromised in the subsequent inspection process. .

Furthermore, today, by making full use of ultra-fine semiconductor processing technology, it is possible to form several thousand ultra-small pressure sensing elements from a single wafer.

However, due to the extremely small size of such ultra-compact pressure sensing elements, handling them becomes extremely complicated when performing pressure certification tests, which further increases the time and effort required for testing. was there.

In particular, when thousands of ultra-small semiconductor pressure sensing elements are formed from a single wafer, it is practically impossible to individually test all of them, as it would require a huge amount of time and effort. , effective countermeasures have been desired.

Additionally, in general, the diameter and thickness of the diaphragm of the pressure sensing element are set appropriately to achieve desired pressure saw sensitivity characteristics, and in conventional pressure verification tests, the thickness of the diaphragm of the pressure sensing element is The test was carried out using a needle, etc.

However, the diaphragm of the pressure sensing element is generally extremely thin, and in particular, in the ultra-small semiconductor pressure sensing element described in #X, the diaphragm is approximately several μm thick.

Therefore, when such a diaphragm is inspected using a stylus, there is a problem in that microcracks and the like occur in the diaphragm due to contact between the stylus and the diaphragm, resulting in a decrease in the product's retention.

1iTatetsuki 1 The present invention was made in view of such conventional problems, and its purpose is to provide a semiconductor that can quickly and accurately verify the characteristics of a conductor pressure detection element in a wafer state. The purpose of this invention is to provide a method and apparatus for testing a detection element.

[Means for Solving the Problems] 1 Pressure 1 Loss Artificial Emperor 1 In the method of the invention, a calibration pressure detection element is provided at the same height as the semiconductor crystal to be measured, and the calibration pressure applied to the wafer is applied in advance to this pressure detection element to adjust the value to a desired value. a pressure calibration step for calibrating; and a verification step for applying a calibrated verification pressure to the wafer and verifying the characteristics of a plurality of pressure detection elements formed on the wafer, the verification step comprising: A stylus contact step in which a stylus is brought into contact with the electrode portion of each pressure sensing element formed on the stylus, and a calibrated verification pressure is applied to the diaphragm portion of the pressure sensing element that is touched by the stylus. The pressure applying step and the pressure characteristic measuring step of sequentially measuring the signal output from the pressure detecting element through the stylus are repeated for each pressure detecting element formed on the stylus ( 1. The characteristics of each pressure detection element are verified in the wafer state based on the measured signals of the eight sweat power detection elements.
Below 6°, the structure of the method of the present invention is further described as U, unitary (, -
explain.

[[Force axis positive T distance of the present invention is defined as 1 being a force-applying direction in which the pressure sensing element for calibration is turbulently moved i, I on the
At this time, it is preferable to calibrate the verification IE force every time the pressure is output from the calibration pressure sensing element.

In the verification step, the verification pressure is applied to the wafer while controlling the wafer by fine movement within a plane intersecting the pressure application direction, and when the pressure is applied, the pressure detection element
It is preferable to set the maximum position of the Shinyoku output from the initial device.

Furthermore, in the pressure characteristic measuring step, the curve corresponding to the test pressure is obtained by differentiating the signal output from each repulsive force detection element when pressure is applied and the signal when pressure is applied. It is preferable to determine the characteristics and test the characteristics.

Pressure Detection Element Inspection Device 6 Furthermore, the pressure detection device inspection device according to the present invention includes a stage portion for fixing a semiconductor crystal wafer on which a large number of pressure detection elements are formed, and a semiconductor crystal wafer adjacent to the stage portion. a calibration pressure detection element provided at the same height as the crystal wafer; a pressure injection nozzle that applies pressure from the L side to the wafer or the calibration pressure detection element; a stylus that contacts an electrode portion of a pressure applying element to which pressure is applied; a blower driving means for controlling the movement of the stage portion and the calibration pressure sensing element at least within a plane intersecting the pressure applying direction; and the blower driving means. pressure calibration means for controlling the pressure injection nozzle and the calibration pressure detection element to face each other, and pre-calibrating the verification pressure applied from the pressure injection nozzle to a desired value based on the signal output from the pressure detection element; , controlling the blower driving means to sequentially make the diaphragm portion of each pressure sensing element formed on the wafer 1 face the pressure injection nozzle, and bring the contact S1 into contact with the electrode portion of the pressure sensing element; a detection element switching control means for sequentially repeating switching of the detection element; and each time the switching operation of the detection element is completed, a calibrated verification pressure is applied from a pressure injection nozzle to the pressure detection element; Pressure characteristic measuring means for verifying the characteristics of each pressure sensing element based on the signal output from the pressure sensing element at this time; It is characterized by

The configuration of the device of the present invention will be explained in more detail below.
I do it.

The present invention includes a device for flatly fixing a semiconductor crystal wafer, and this stage part has a large number of suction pores on its surface to fix the wafer in a flat manner. - It is preferable to do so.

Further, as described above, the pressure detection element for calibration is provided adjacent to the stage section at the same height as the "V-conductor crystal wafer." It is preferable to use one that was created at approximately the same time as the above, has the same diaphragm shape and plate g as each pressure sensing element formed on the wafer, and has undergone predetermined pressure calibration.

In addition, the pressure injection nozzle applies pressure to the calibration pressure detection element and the above-mentioned elements from above, respectively.As such a pressure injection nozzle, it is necessary to adjust its relative position and height with respect to the wafer. It is preferable to use a device that has an adjustable Akebono bridge and injects pressure gas controlled by a pressure υ1111 device.

Further, the stylus is used to press and contact the electrode portion of the pressure applying element, which applies pressure by advancing and retracting toward the wafer fixed to the stage portion, and is used to obtain an electrical connection. The number of these stylus corresponds to the number of electrode parts of the pressure detection element, usually 4 to 6, and the height adjustment mechanism is used to adjust the height of the stylus in the space above the stage part. Spring location■
Holds fixed in 1! It is preferable to form the mold so that the

In addition, the pressure calibration 1 [T: stage and detection detection I, 7J control means supplies the stage part and the calibration pressure detection element A to at least keep the stage part and the pressure detection element A under pressure. The movement or fine movement of the stylus is controlled within the X-Y plane intersecting the +111 direction, and the vertical movement of the stylus is controlled by i, II.
l1l-! It is something to do.

Further, the pressure calibration means controls the blower driving means, causes the pressure injection nozzle to face the diaphragm portion of the calibration pressure detection element, and applies a verification pressure to the diaphragm portion. At this time, the pressure level of the Suzuki verification pressure is calibrated to a desired value based on the signal output from this pressure detection element.

Also, the detection element is off! #i1. The control means (5t, 1) controls the blower driving means (1), and the pressure injection nozzle is sequentially opposed to the diaphragm portion of each pressure detection element formed above. Then, the stylus is pressed into contact with the electrode part of the pressure detection element facing the pressure injection nozzle 4L, and the characteristics are measured and premature ejaculation is performed.

Further, the pressure characteristic measuring means applies a verification pressure from the pressure injection nozzle to the opposing pressure detecting element at a calibrated pressure level every time the detecting element is switched by the pressure detecting element control means. The characteristics of the pressure sensing element are verified based on the signal output from the sensing element.

According to the present invention, it is preferable that a data output device 5 for displaying the test results is provided to display the characteristics of each pressure sensing element tested in the wafer state as numerical data or graphic data.

[Function] The method and apparatus of the present invention have the above-mentioned configuration, and the function thereof will be explained next.

First, a semiconductor crystal wafer on which a pressure detection element to be measured is formed is fixed flatly on a stage section.

In this manner, when preparations for measurement are completed, pressure calibration of the verification pressure to be applied to the wafer is performed next.

In this pressure calibration, first, the blower driving means is controlled, the pressure injection nozzle is made to face the calibration pressure detection element, and a verification pressure is applied to the diaphragm portion thereof.

At this time, the rt force level is fed back based on the signal output from the pressure detection element for calibration i, ll11]
and calibrate the calibration pressure to the desired value.

Here, the application of the verification pressure is performed while controlling the pressure detection element by fine movement on the X-Y plane intersecting the pressure application direction, and the calibration is performed based on the maximum value of the signal output from the pressure detection element at this time. It is preferable to do so.

When the calibration of the verification pressure is completed in this way, the verification operation of each pressure detection element formed on the semiconductor crystal wafer is started 17i1.

First, when the pressure calibration step is completed, the stage section is moved, an arbitrary pressure detection sensor formed on the semiconductor crystal wafer is placed opposite to the pressure injection nozzle, and the touch plate is applied to the thin electrode of the pressure detection element. make contact with oppression.

At this time, the calibrated verification pressure is applied from the pressure injection nozzle to the diaphragm part of the pressure detection element while controlling the stage part to move slightly within the X-Y plane.

Then, it is preferable to search for a position where the signal output from the pressure detection element has a maximum value, and to initially set the position of the semiconductor crystal wafer so that the pressure injection nozzle and the diaphragm part face each other at this position.

When the initial position of the semiconductor crystal wafer is set in this way, the detection element switching control means and the pressure characteristic measuring means are activated to carry out the above-mentioned spread contact process, pressure application process, and pressure characteristic measurement process on the wafer. The process is repeated one after another for each pressure sensing element formed on the wafer, and the characteristics are verified for all of the pressure sensing elements formed on the wafer.

That is, each time the pressure verification of one pressure detection element is completed, the detection element force holding control means controls the prober drive means to transfer the diaphragm portion of the next pressure detection element formed on the wafer to the pressure injection nozzle. The probes are placed facing each other, and the stylus is pressed into contact with the electrode portion of the pressure detection element each time, thereby switching the detection element.

When the detection element is switched in this way, the pressure characteristic measuring means applies a calibrated verification pressure to the pressure detection element from the t-j injection nozzle, and when applying pressure, this pressure is applied when applying JIE pressure. Based on the signal output from the detection element, its characteristics, such as resistance value and output voltage, are measured.

Each measurement data obtained in this way is sequentially stored in a memory provided in one stage of pressure measurement.
The data is displayed as numerical data or graphic data by the data output device r.

As described above, according to the present invention, it is possible to quickly and automatically measure the characteristics of a pressure sensing element in the state of a semiconductor crystal wafer. This makes it possible to provide low-cost pressure sensing elements.

Further, according to the present invention, since the characteristics of the pressure sensing element can be measured in the wafer state, it is possible to measure the characteristics of the ultra-small pressure sensing element, which has been difficult to measure in the past. Measurements can be performed quickly and automatically, and as a result, by using the present invention, it becomes possible to produce ultra-small pressure sensing elements on an industrial production basis, which was previously impossible.

Further, according to the present invention, since it is possible to judge whether the pressure is good or bad based on the signal output from the pressure detection element when pressure is applied, it is possible to omit the conventional measurement of the thickness of the diaphragm using a stylus. It becomes possible. As a result, according to the present invention, it is possible to prevent a drop in seedling quality due to microcracks in the diaphragm or damage to the diaphragm that occur during plate thickness measurement, and it is possible to provide a highly reliable pressure detection element.

[Effects of the Invention] As explained above, according to the present invention, it is possible to test the characteristics of a pressure sensing element in the state of a semiconductor crystal wafer, which is an original feature of semiconductor manufacturing technology. It becomes possible to provide an ultra-small, highly reliable, and low-cost semiconductor pressure sensing element that is mass-producible.

[Example] Next, preferred embodiments of the present invention will be described based on the drawings.

Configuration of Embodiment FIG. 3 shows a preferred embodiment of the pressure detection element verification device according to the present invention.
A stage section 22 and a calibration pressure detection element 24 are provided on a base 20 that is provided to be three-dimensionally movable in the Z-axis direction.

The stage section 22 is provided at the center of the base 20,
A large number of pores 26 are provided on its surface to horizontally adsorb and fix the semiconductor crystal wafer 200.

Further, the calibration pressure detection element 24 is connected to the stage section 22.
-1 whose upper surface is provided adjacent to the semiconductor crystal wafer 2
The position is determined so that it is the same height as 00.

Here, it is preferable to use a pressure sensing element 24 for calibration that was created approximately at the same time as the semiconductor crystal wafer 200 to be measured, and is similar to each pressure sensing element 100 formed on these wafers 200. It is necessary to use a diaphragm that has the same shape and plate thickness and that has gone through a predetermined pressure calibration so that the characteristics of the diaphragm are the same.

Furthermore, a pressure injection nozzle 30 and a stylus 32 are provided above the stage portion 22 formed in this manner.

The mounting position of the pressure injection nozzle 30 is adjusted three-dimensionally in the XYZ axis directions by a position adjustment mechanism (not shown), and the pressure injection nozzle 30 is adsorbed onto the stage section 22 by relatively moving the base 20 within the XY plane. It is formed so that it can face a desired position of the fixed semiconductor crystal wafer or the calibration pressure detection element 24 and apply a verification pressure.

Further, the stylus 32 is formed to be able to move forward and backward in the vertical direction,
Press LL on the electrode part of the pressure detection element 100 to which pressure is applied.
formed to make contact.

Here, this spread 32 is as shown in FIG.
It is necessary to provide a number t'j corresponding to the number of g of the electrode section 1G of the pressure detection cord 24 or 100, and usually 4 to 6 cords are provided.

FIG. 5 shows the circuit configuration of the pressure sensing element 100 tested in this example, and shows the circuit configuration of the pressure sensing element 100 of the example.
0 is a gauge including a bridge circuit) and has four electrode portions 16 connected to the bridge terminal.

Therefore, in this embodiment, four spreaders 32 are provided as shown in FIG.
The output voltage of this bridge circuit is taken out through.

The stylus 32 provided in this way is adjusted in a manner (not shown) so that it can surely come into pressure contact with the electrode portion 16 of each pressure detection cord. ! The mechanism allows the mounting position to be adjusted in the three-dimensional directions of XYZ.

A feature of the present invention is that the characteristics of the pressure detection element 100 can be verified in the state of the semiconductor crystal wafer 200.

Therefore, in the method of the present invention, first, a pressure calibration step is performed in which a verification pressure to be applied to the wafer 200 is applied in advance to the calibration pressure detection element 24, and the value is calibrated to a desired value.

After the pressure calibration process is completed, the calibrated verification pressure is applied to the wafer, and the pressure of each pressure detection element 100 formed on the wafer is verified in the wafer state. Execute the process.

Here, in the verification process of the present invention, a side contact process, a pressure application process, and a pressure specific measurement process are repeatedly performed on each pressure detection element 100 formed on the wafer.

That is, first, J3 is in the contact process ε1, and the wafer 20 is
The spreader 32 is pressed into contact with the electrode portion 16 of each pressure sensing element 100 formed on the pressure sensing element 100 .

Subsequently, in the pressure application process, a calibrated verification pressure is applied to the diaphragm 10 portion of the pressure detection element 100 that has been contacted by the stylus.

Then, signals outputted from the pressure detection cord 100 during this pressure application are sequentially measured via the stylus 32.

Such a series of steps is sequentially repeated for each pressure detection element 100 formed on the first part 200,
Based on the measured signals of each pressure detection element 100, the characteristics of each pressure detection element 100 are verified in the wafer state.

FIG. 2 shows the electrical circuit of a device for carrying out the method of the invention.

The apparatus of the embodiment moves the base 20 within the X-Y plane.1. I
It includes a blower drive device 40 that controls vertical movement of the stylus 32 and a pressure control device 42 that controls the pressure of the pressure injection nozzle 30.

The blower driving device 440- controls the movement of the base 20 in the X-Y plane using a step motor and a precision mechanism, and precisely controls the position of the pressure detection element 24 or 100 facing the pressure injection nozzle 30. Things are going well.

Further, the pressure control device 42 is connected to the pressure injection nozzle 30 via a pressure vibrator 42a, and the pressure control device 42 is connected to the pressure injection nozzle 30 via a pressure vibrator 42a.
2b, it is formed using an electronically controlled pressure reducing valve and a solenoid valve.

Here, the base 2 is driven by the blower drive device 40.
0, and the calibration pressure detection element 24 and the pressure injection nozzle 3
When pressure is applied from the pressure jet nozzle 30 to the calibration pressure detection element 24, the calibration pressure detection element 24 outputs a signal corresponding to the applied pressure. The signal thus output is input to the arithmetic control II device 48 via the amplifier 44 and the A/D converter 46.

In addition, when the base 20 is moved by the blower drive device 40 so that the desired pressure detection element 100 of the semiconductor wafer 200 and the pressure injection nozzle face each other, and pressure is applied from the pressure injection nozzle 30 in this state, this pressure Similarly, the detection element 100 outputs a signal corresponding to the applied pressure.

The thus output signal is then electrically extracted via the stylus 32, amplified, and input to the arithmetic and control unit 48 via the 1E50° A/D conversion 352.

In the present invention, the control device 48 of this performance includes a pressure calibration circuit 54, a detection element disconnection etiqt11 circuit 56, and a pressure characteristic measurement circuit 58, and performs the pressure calibration process and verification process described above.

Here, the pressure calibration circuit 54 controls the blower drive device 40 so that the jet nozzle 32 and the calibration pressure detection element 24 are opposed to each other. Next, the pressure control device 42 is turned on to apply a verification pressure from the pressure injection nozzle 30 to the pressure detection element 24.

Then, the verification pressure is calibrated to a desired Mj based on the signal output from the pressure detection sensor 24.

Further, after the calibration of the verification pressure is completed, the detection element switching control circuit 58 controls the blower drive device 40 to sequentially switch the pressure detection elements 100 on the wafer facing the pressure injection nozzle 30. Performs test element switching operation.

In other words, the detection element switching circuit 56 controls the blower drive device 40 to sequentially cause the diaphragm portion of each pressure detection element 100 formed on the wafer 200 to face the pressure injection nozzle 30.

Then, each time a stylus 32 is attached to the electrode portion of the pressure detection element 100 facing in this way, as shown in FIG.
Press and contact.

Each time the detection element switching operation is performed in this manner, the pressure characteristic measurement circuit 58 applies the verification pressure from the pressure injection nozzle 30 to the diaphragm portion of the pressure detection element 100 facing the pressure detection element 100. The characteristics of each pressure detection element 100 are verified based on the signal output from the pressure detection element 100.

In this manner, according to the present invention, the detection element switching control circuit 56 and the pressure characteristic measurement circuit 58 control the wafer 200
The characteristics of each pressure detection element 100 formed on the wafer can be sequentially verified in the wafer state, and the measured characteristic data is sequentially stored in the memory in the pressure characteristic measurement circuit 58.
The value is displayed numerically or graphically on the data output device 59.

FIG. 6 shows a specific configuration of the arithmetic and control device 48. The arithmetic and control filtration device 48 of embodiment a has a microb[l processor 60. Includes programmer 162.7-master 64 and interface 6G.

In the embodiment, in the program menu 62 of J3, (L,
Program information for executing the pressure calibration process and the verification process is stored.
- The bar drive 8 equipment 40 and the pressure υ control device 42 are υIII
It's happening.

The evaluation data of each pressure detection element installed in the microphone [1] by the pressure sensor 60 is
6) and is displayed on all five data output devices.

1 sparrow λm This embodiment consists of the above configuration, and next we will explain its operation by 31t.
An example will be described in which a semiconductor crystal wafer 200 on which a large number of pressure detection elements 100 of U/c#ift tX are measured is to be measured.

(a) Preparation for measurement First, the wafer 200 to be measured is placed on the stage section 22, and the stage section 22 is evacuated.
The wafer 200 is suctioned and fixed in a two-dimensional manner through a large number of pores 26 provided on the stage portion 22 .

Subsequently, the number of stylus 32 corresponding to the number of M poles of each pressure sensing element 100 is set on the −F side of the stage section 22, and each set stylus 32 is then set on the pressure sensing element 1.
Adjust its position so that it can press into contact with the electrode section 00.

(b) Pressure Calibration In this way, at the special point where the preparation for measurement has been completed, the calibration pressure applied to the wafer 200 is next calibrated.

In this pressure calibration process, first, the pressure calibration circuit 54 controls the bubble drive device 40 to move the base 20 to a position where the pressure injection nozzle 30 and the calibration pressure detection element 24 face each other. .

In this state, the pressure calibration circuit 54 (Y, pressure t, I
The Ill device 42 is turned on to apply a verification pressure from the pressure injection nozzle 30 to the calibration pressure detection element 24, and the pressure level is feedback-controlled based on the signal output from the pressure detection element 24 at this time. Calibrate the calibration pressure to a value of 3 kg/c!i.

At this time, the application of the verification pressure is performed using the blower drive unit blue 4.
0 allows fine movement control of the base 20 in the X-Y horizontal plane.
], and apply the test liquid supplied from the pressure injection nozzle 30 evenly to the diaphragm part of the pressure detection element 24. 5. Then, the calibration pressure is calibrated so that the maximum value of the signal output from the pressure detection element 24 at this time becomes a value corresponding to a pressure of 3 k Q / ci.

In this way, when the verification pressure applied from the pressure injection nozzle 30 is calibrated to a value of 3 klJ/ci, next the 6 pressure detection elements 10 formed on the semiconductor crystal tube 2001
0 pressure verification operation starts.

(C) Initial setting of the position of the head first, when the pressure calibration step is completed, the detection element switching control circuit 56 controls the blower drive unit 2240 to detect any pressure formed on the semiconductor crystal wafer 200. The base 2 is placed so that the sensor 100 faces the pressure injection nozzle 30.
Move 0. Then, after making any pressure detection sensor 100 face the pressure injection nozzle 30, the stylus 32 is inserted into the fourth
As shown in the figure, the electrode portion of this pressure detection element 100 is brought into contact with pressure.

In this state, the pressure characteristic measuring circuit 58 sets the driver device 40 and the pressure device 42 to tl11, and the base 4
A calibrated verification pressure of 3 kQ/- is applied from the pressure injection nozzle 30 to the diaphragm portion of the pressure detection element 100 while controlling the pressure by fine movement in the X-Y horizontal plane.

At this time, since the base 24 is controlled to move slightly as described above, the verification pressure is evenly applied to the diaphragm portion of the pressure detection element 24 from the pressure injection nozzle 30, and the arithmetic and control device 48 of the embodiment The position j of the semiconductor hex-crystal wafer 200 is initially set so that the pressure injection nozzle 30 and the diaphragm part face each other at this position.
I have all the settings.

(d) Data Manual Once the position of the semiconductor crystal wafer 200 is initialized in this way, next the pip interval in the hemi-solid crystal wafer 200 of each pressure detection element 100, the pressure application time of the verification pressure, the pressure Data such as resistance measurement timing of the detection element 100 is input. Please note that these data inputs are
This may be carried out before starting such a pressure verification process, or may be carried out in advance before starting the above-mentioned pressure calibration process.

(e) Verification operation When the initial position setting of the semiconductor crystal tube 200 and the input of the data are completed in this way, the detection system completion stage υ control circuit 5-6 and the pressure characteristic measurement circuit 58 are activated. Then, the aforementioned stylus contact step, pressure application time and pressure characteristic measurement step are performed on each pressure sensing element 1 formed on the wafer 200.
00, and the characteristics of all the pressure sensing elements 100 formed on the wafer 100 are verified.

FIG. 7 shows a timing chart of the verification process of this embodiment.

In the device of the embodiment, the detection element switching control circuit 56 includes:
Every time the pressure verification of one pressure detection element 100 is completed, the spreader 32 is retracted upward from the wafer 200, and at the same time, the adjacent pressure detection element 100 is removed from the pressure injection nozzle 3.
Each time, the base 20 is moved by one pitch of the detection element so that it faces 0. Then, at the same time as the movement of the base 20 is completed, the stylus 32 is brought into pressure contact with the electrode portion of a new pressure detection element 100.

When the detection element switching control circuit 56 finishes switching the detection elements in this way, the pressure characteristic measurement circuit 58 measures the offset voltage and resistance value of the pressure detection element when no pressure is applied. The data is written and stored in the data memory 64 shown in FIG.

Subsequently, the pressure characteristic measurement circuit 58 directs the pressure injection nozzle 30 toward the pressure detection element 100 by 3k (1/
Apply GJ for 1 hour (set pressure of Ci),
At this time, the voltage output from the pressure detection element 100 is similarly written and stored in the data memory 64.

Therefore, by finding the difference between the obtained A pressure l-voltage when no pressure is applied and the output voltage when pressure is applied, the output voltage characteristics of this pressure sensing element 100 with respect to the verification pressure of 3ki:l/ci can be found. It will be done.

In this manner, according to the present invention, the series of operations described above are sequentially performed on all the pressure detection elements 100 formed on the first part 200, and the measured data of each pressure detection element 100 is transferred to a data file. [The information will be stored sequentially in the file 64.]

Then, τ, the data written and stored in the data memory 64 in this way is printed out or displayed as an image on the data output device i'ff 59 together with the address of each pressure detection element 100, so that each It becomes possible to quickly and automatically verify the characteristics of the pressure detection element 100 in the wafer state.

In addition, in the present invention, the pressure characteristic measurement circuit 58 includes:
It is also possible to compare the obtained data of each pressure detection element 100 with a standard value inputted in advance to determine whether the data is good or bad, and to display the determination results.

In an apparatus that performs such a pass/fail determination, it is preferable to provide a marker structure that numbers some kind of mark at the wafer position where a pressure detection element that has been determined to be rejected is present.

Further, in the above embodiment, the case where a strain gauge type pressure sensing element is verified as shown in FIG. can similarly test its characteristics.

Further, in this embodiment, the arithmetic and control device 48 is configured in software as shown in FIG. 6, but the present invention is not limited to this.
It is also possible to calibrate the sensor 48 hardware-wise.

[Brief explanation of the drawing]

FIG. 1 is a flowchart diagram showing a method for testing a pressure detection bundler according to the present invention, FIG. 2 is a block diagram showing a preferred embodiment of the verification method of the present invention, and FIG. An explanatory diagram showing the positional relationship between the pressure injection nozzle and the stage section, Fig. 4 is an explanatory diagram showing the contact state between the pressure detection element and the stylus, and Fig. 5 is a circuit diagram of the pressure detection element used in this example. , Fig. 6 is a circuit diagram of the control TLLV device used in this embodiment, Fig. 7 is a timing chart showing the operation of the device of this embodiment, and Fig. 8 shows the general configuration of the pressure detection element. FIG. 8(A) is an external view of a wafer in which a large number of semiconductor pressure sensing elements are formed, and FIG. 8(B) is a side sectional view of a capacitance type pressure sensor formed separately from the wafer. , FIG. 8(C) is a side sectional view of a strain gauge type pressure sensor formed separately from the wafer, and FIG. 8(D) is an explanatory diagram showing a conventional method for testing a pressure sensing element. DESCRIPTION OF SYMBOLS 10... Diaphragm, 22... Stage part, 24... Pressure detection element for calibration, 30... Pressure injection nozzle, 32... Stylus, 40... Bl''-bar drive device, 42... Pressure control O equipment, 48... Arithmetic control unit, 54... Pressure calibration circuit, 56... Detection element switching control circuit, 58...
Pressure characteristic measurement circuit, 100... Pressure detection element, 200... Semiconductor wafer. Figure 1 Figure 3 Figure 5

Claims (5)

[Claims] (1) Pressure calibration in which a pressure detection element for calibration is provided at the same height as the semiconductor crystal wafer to be measured, and the verification pressure applied to the wafer is applied in advance to this pressure detection element to calibrate the value to a desired value. and a verification step of applying a calibrated verification pressure to the wafer to verify the characteristics of a plurality of pressure sensing elements formed on the wafer, the verification step comprising: a stylus contacting step in which a stylus is brought into contact with the electrode portion of each pressure sensing element that has been calibrated; a pressure application step in which a calibrated verification pressure is applied to the diaphragm portion of the pressure sensing element touched by the stylus; A pressure characteristic measuring step of sequentially measuring the signals output from the stylus via the stylus; and repeating the steps sequentially for each pressure sensing element formed on the wafer to obtain the measured signal of each pressure sensing element. A method for testing pressure sensing elements, characterized in that characteristics of each pressure sensing element are tested in a wafer state based on the following. (2) In the method according to claim (1), in the pressure calibration step, the calibration pressure is applied to the calibration pressure detection element within a plane intersecting the pressure application direction. A method for verifying a pressure detection element, characterized in that the test pressure is calibrated based on the maximum value of a signal output from the pressure detection element at this time while performing fine movement control. (3) In the method according to any one of claims (1) and (2), the verification step includes applying the verification pressure to the wafer by slightly moving the wafer within a plane intersecting the pressure application direction. A method for verifying pressure of a detection element, characterized in that the method is performed under control, and the position where the signal output from the pressure detection element is maximum when pressure is applied is set as the initial position. (4) In the method according to any one of claims (1), (2), and (3), the pressure characteristic measuring step includes a signal output from each pressure detection element when pressure is applied and a signal when pressure is not applied. A method for testing a pressure detection element, characterized in that a signal corresponding to a test pressure is obtained by calculating a difference between a signal at the time of application and a signal at the time of application. (5) a stage section for fixing a semiconductor crystal wafer on which a large number of pressure detection elements are formed; a calibration pressure detection element provided adjacent to the stage section at the same height as the semiconductor crystal wafer; and the wafer. or a pressure injection nozzle that applies pressure to the calibration pressure detection element from above; a stylus that advances and retreats toward the wafer and contacts the electrode part of the pressure application element to which the calibration pressure is applied; and the stage part and the calibration pressure detection element. Prober driving means for controlling the movement of a pressure sensing element for calibration at least within a plane intersecting the pressure application direction; and controlling the prober driving means to make the pressure injection nozzle and the calibration pressure sensing element face each other, pressure calibration means for pre-calibrating the verification pressure applied from the pressure injection nozzle to a desired value based on the output signal; and a diaphragm portion of each pressure detection element formed on the wafer by controlling the prober drive means. a detection element switching control means for sequentially repeating switching of the detection element by sequentially facing the pressure injection nozzle and bringing the stylus into contact with an electrode portion of the pressure detection element each time; and a switching operation of the detection element. pressure characteristic measuring means that applies a calibrated verification pressure from a pressure injection nozzle to the pressure detection element each time the pressure detection element is completed, and verifies the characteristics of each pressure detection element based on the signal output from the pressure detection element; What is claimed is: 1. A pressure sensing element testing device comprising: testing the characteristics of each pressure sensing element in a wafer state.