JPS6232555U - - Google Patents

Info

Publication number
JPS6232555U
JPS6232555U JP12366885U JP12366885U JPS6232555U JP S6232555 U JPS6232555 U JP S6232555U JP 12366885 U JP12366885 U JP 12366885U JP 12366885 U JP12366885 U JP 12366885U JP S6232555 U JPS6232555 U JP S6232555U
Authority
JP
Japan
Prior art keywords
case
semiconductor element
gate
overvoltage protection
copper post
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12366885U
Other languages
English (en)
Other versions
JPH0526773Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1985123668U priority Critical patent/JPH0526773Y2/ja
Publication of JPS6232555U publication Critical patent/JPS6232555U/ja
Application granted granted Critical
Publication of JPH0526773Y2 publication Critical patent/JPH0526773Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages

Landscapes

  • Thyristors (AREA)

Description

【図面の簡単な説明】
第１図は本考案の一実施例を示す半断面図、第
２図は他の実施例を示す半断面図、第３図はＧＴ
Ｏサイリスタのターンオフ時の電圧、電流波形図
、第４図はＧＴＯサイリスタの過電圧保護回路図
、第５図は過電圧保護素子の構造図、第６図は過
電圧保護素子のモールド構造図である。 １１……ＧＴＯサイリスタ素子本体、１３……
タングステン板、１４……アルミ電極、１５……
ゲート電極、１６，１７……銅ポスト、１８……
セラミツクス、２２……ゲート端子、２３……位
置決めガイド、２４……リング板、２６……過電
圧保護素子、２７……スプリング導体片。

Claims (1)

    【実用新案登録請求の範囲】
  1. 自己消弧形半導体素子をケースに気密封入する
    において、前記半導体素子のカソード側銅ポスト
    の内面又は該銅ポストをケースに封着する導体板
    の内面に一方の電極面が固着され前記半導体素子
    のゲート．カソード間の逆電圧をバイパスする降
    伏電圧にされた過電圧保護素子と、前記半導体素
    子のゲート電極に接続され前記ケース外に引出さ
    れたゲート端子と、前記ケース内で前記ゲート端
    子と前記過電圧保護素子の他方の電極面との間に
    圧接されるスプリング導体片とを備えたことを特
    徴とする半導体素子の封入構造。
JP1985123668U 1985-08-12 1985-08-12 Expired - Lifetime JPH0526773Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1985123668U JPH0526773Y2 (ja) 1985-08-12 1985-08-12

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1985123668U JPH0526773Y2 (ja) 1985-08-12 1985-08-12

Publications (2)

Publication Number Publication Date
JPS6232555U true JPS6232555U (ja) 1987-02-26
JPH0526773Y2 JPH0526773Y2 (ja) 1993-07-07

Family

ID=31014975

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1985123668U Expired - Lifetime JPH0526773Y2 (ja) 1985-08-12 1985-08-12

Country Status (1)

Country Link
JP (1) JPH0526773Y2 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05129538A (ja) * 1991-10-30 1993-05-25 Toyo Electric Mfg Co Ltd 複合形半導体素子の構造
WO2000042664A1 (fr) * 1999-01-18 2000-07-20 Mitsubishi Denki Kabushiki Kaisha Dispositif a semiconducteur colle par compression

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5791258U (ja) * 1980-11-26 1982-06-04

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5791258U (ja) * 1980-11-26 1982-06-04

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05129538A (ja) * 1991-10-30 1993-05-25 Toyo Electric Mfg Co Ltd 複合形半導体素子の構造
WO2000042664A1 (fr) * 1999-01-18 2000-07-20 Mitsubishi Denki Kabushiki Kaisha Dispositif a semiconducteur colle par compression

Also Published As

Publication number Publication date
JPH0526773Y2 (ja) 1993-07-07

Similar Documents

Publication Publication Date Title
DE59307770D1 (de) Abschaltbares Hochleistungs-Halbleiterbauelement
JPS6232555U (ja)
JPS5875490U (ja) Ｇｔｏの保護回路
JPS61199058U (ja)
JPS63178924U (ja)
JPS61119363U (ja)
JPS6247148U (ja)
JPS6121137U (ja) 自己消弧形サイリスタの過電圧防止回路
JPS6343453U (ja)
JPS58145042U (ja) 過電圧保護回路
JPS61179834U (ja)
JPS6073254U (ja) 半導体装置
JPS5868040U (ja) サイリスタとそのスナバ回路の組立構造
JPS6291456U (ja)
JPS593558U (ja) Ｇｔｏ素子の保護装置
JPS6197855U (ja)
JPS6442627U (ja)
JPS61205230U (ja)
JPS6130258U (ja) 圧接形半導体装置
JPS60109339U (ja) 増幅ゲ−ト構造ゲ−トタ−ンオフサイリスタ
JPS61123549U (ja)
JPS6090850U (ja) 半導体装置
JPS59128704U (ja) ギヤツプレス避雷器
JPS6271859U (ja)
JPS6390985U (ja)