JPS6232608A - Super-lattice device manufacturing method - Google Patents
Super-lattice device manufacturing methodInfo
- Publication number
- JPS6232608A JPS6232608A JP17257085A JP17257085A JPS6232608A JP S6232608 A JPS6232608 A JP S6232608A JP 17257085 A JP17257085 A JP 17257085A JP 17257085 A JP17257085 A JP 17257085A JP S6232608 A JPS6232608 A JP S6232608A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- film
- reaction chamber
- selector
- periodically
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- 238000006243 chemical reaction Methods 0.000 claims abstract description 18
- 239000010409 thin film Substances 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 11
- 239000010408 film Substances 0.000 abstract description 40
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 5
- 239000002245 particle Substances 0.000 abstract description 4
- 230000000737 periodic effect Effects 0.000 abstract description 4
- 238000006303 photolysis reaction Methods 0.000 abstract description 3
- 230000015843 photosynthesis, light reaction Effects 0.000 abstract description 3
- 229910007264 Si2H6 Inorganic materials 0.000 abstract 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000010030 laminating Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 48
- 239000002994 raw material Substances 0.000 description 18
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 11
- 229910052753 mercury Inorganic materials 0.000 description 8
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000005424 photoluminescence Methods 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 206010070834 Sensitisation Diseases 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 230000008313 sensitization Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分野
本発明は、光エネルギにより原料ガスを分解する光ＣＶ
Ｄ法を用ｄ）た超落子素子の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Industrial application field The present invention is directed to an optical CV that decomposes raw material gas using light energy.
The present invention relates to a method for manufacturing a super-elastic element using d) method D.
（ロ）従来の技術
一般に異なった漿［Ｉ：幅帯（バンドギャップ）及びま
たは導電型を有する２種以上の半導体薄膜を周期的に積
層した超格子素子は、その量子井戸効果によってキャリ
アを高速に移動させることができる。このような超格子
素子が結晶性半導体にょって製造される場合には、各種
半導体の結晶構造が異なる為、異種半導体間で格子不整
合が生じ素子の寿命が短くなる等の問題が生しる。(b) Conventional technology In general, a superlattice element in which two or more types of semiconductor thin films having different width bands (band gaps) and/or conductivity types are periodically laminated is capable of transporting carriers at high speed by its quantum well effect. can be moved to When such superlattice elements are manufactured using crystalline semiconductors, problems such as lattice mismatch between different types of semiconductors occur, which shortens the life of the element, because the crystal structures of various semiconductors are different. Ru.
一方非晶質半導体によって超格子素子を製造する場合に
は、非晶質半導体は構造上の自由度が太きいために異種
半導体間の格子不整合による上記問題は緩和きれること
になる。On the other hand, when a superlattice element is manufactured using an amorphous semiconductor, the above-mentioned problem due to lattice mismatch between different types of semiconductors can be alleviated because the amorphous semiconductor has a large degree of structural freedom.
従来このような非晶質半導体による超格子素子の製造方
法としては、例えば第３０回応用物理学会関係連合講演
回予稿集Ｐ３７７の６Ｐ−Ｂ−１７に記載されているよ
うな方法があった。これは原料ガスを反応室に充満させ
、このガスにグロー放電によって分解反応をおこさせる
ことにより支持体上に半導体薄膜を形成し、次に該反応
室の原料ガスを別の原料ガスと入れ換え、再びグロー放
電を行い前記半導体薄膜の表面上にさらに別の半導体薄
膜を形成し、順次これを周期的に繰返すことによって超
格子素子を製造する方法である。Conventionally, as a method for manufacturing such a superlattice element using an amorphous semiconductor, there is a method described in, for example, 6P-B-17 of the 30th Japan Society of Applied Physics Related Conference Proceedings P377. This method involves filling a reaction chamber with a raw material gas, causing a decomposition reaction in this gas by glow discharge to form a semiconductor thin film on a support, and then replacing the raw material gas in the reaction chamber with another raw material gas. This is a method of manufacturing a superlattice element by performing glow discharge again to form another semiconductor thin film on the surface of the semiconductor thin film, and repeating this process periodically.
（ハ） 発明が解決しようとする問題点然し乍ら、前記
グロー放電によるプラズマＣｖＤ法の場合、高エネルギ
荷室粒子が形成きれつつある膜を衝撃して当該膜に損傷
（ダメージ）を与えるおそれがある。特に異種半導体膜
の界面に於いて膜がプラズマダメージを被ると、不純物
の混入や膜組成の相互拡散が発生し、周期性が不明確と
なる。(c) Problems to be Solved by the Invention However, in the case of the plasma CVD method using glow discharge, there is a risk that high-energy cargo space particles may impact the film that is being formed and cause damage to the film. . In particular, when a film suffers plasma damage at the interface between different semiconductor films, impurities are mixed in and the film composition mutually diffuses, making the periodicity unclear.
（ニ） 問題点を解決するための手段
本発明は上記問題点を解決すべく、光エネルギにより反
応室内に周期的に導入される原料ガスを分解して複数の
半導体薄膜を支持体上に積層することを特徴とする。(d) Means for Solving the Problems In order to solve the above-mentioned problems, the present invention decomposes a raw material gas periodically introduced into a reaction chamber using light energy and laminates a plurality of semiconductor thin films on a support. It is characterized by
（ホ）作用
上述の如く複数の半導体薄膜は光エネルギによるＮ科ガ
スの分解によって形成諮れるので、高速荷電粒子による
プラズマダメージは回避される。(E) Function As described above, since the plurality of semiconductor thin films are formed by decomposing the N family gas using light energy, plasma damage caused by high-speed charged particles is avoided.
（へ）実施例
第１図は本発明製造方法を説明するための光ＣＶＤ装置
の概念図であって、反応室（１）の天面に光照射窓とし
ての石英板（２）により閉本し、その石英板（２）のさ
らに上方に波長１８４９人と２５３７大の紫外光を輻射
する低圧水銀ランプの光ｔＡ（３）が設けられ、断る光
！（３）から輻射きれた前記紫外光は石英板（２）を透
過して反応室（１）内に到達する６反応室（１）内の中
央には予めガラス、セラミック、金属板或いは前記ガラ
スやセラミック表面にｓ、０．やＩＴＯに代表ごれる透
光性導電膜や金属膜がコーティングされた導電性ガラス
や導電性セラミック等の膜厚サブミクロン−数ミクロン
程度の薄膜を支持するに好適な支持体（４）がヒータ（
５）を内蔵した載置台（６）上に配置され、前記石英板
（２）と反応空間を挾んで対峙している。前記紫外光の
光エネルギにより分解される原料ガスは断る原料ガスを
貯蔵するガスボンベ＜７ａ）（７ｂ）（７Ｃ）・・・ヲ
出発し、バルブ（８ａ）＜８ｂ）＜８ｃ）・・・、マス
フローコントローラ（９ａ）（９ｂ） （９ｃ）・・・
及び選択された原料ガスのみを周期的に導出するガス選
択器（ｌＯ）を介して、所定温度例えば室温〜８０°Ｃ
程度に制御された水銀槽（１１）を通過して、増感材と
して作用する水銀蒸気と共に反応室（１）内に導入され
る。このように水銀蒸気を利用した方法は水銀増感法と
称仕られ、これ自体は広く知られた技術であり、紫外光
を吸収しない或いは吸収率の低い分子に分解反応を起こ
させるときに用いられる。すなわち、反応ガスは紫外光
により直接分解されるのではなく、水銀蒸気が斯る紫外
光を吸収して励起され高エネルギ状態となり、高エネル
ギ状態の水銀が反応ガス分子と衝突することによって分
解反応を起すものである。(f) Example FIG. 1 is a conceptual diagram of a photo-CVD apparatus for explaining the manufacturing method of the present invention, and is closed by a quartz plate (2) as a light irradiation window on the top surface of the reaction chamber (1). However, above the quartz plate (2), light tA (3) from a low-pressure mercury lamp that emits ultraviolet light with a wavelength of 1,849 and 2,537 is installed, and the light is rejected! The ultraviolet light radiated from (3) passes through the quartz plate (2) and reaches the reaction chamber (1). or ceramic surface with s, 0. The heater is a support (4) suitable for supporting thin films of submicron to several micron thickness, such as conductive glass or conductive ceramic coated with a transparent conductive film such as ITO or a metal film. (
5), and is placed on a mounting table (6) containing the quartz plate (2), and faces the quartz plate (2) with a reaction space in between. The raw material gas decomposed by the light energy of the ultraviolet light departs from the gas cylinder <7a) (7b) (7C)... that stores the raw material gas, and the valve (8a)<8b)<8c)... Mass flow controller (9a) (9b) (9c)...
and a gas selector (IO) that periodically extracts only the selected raw material gas at a predetermined temperature, for example, room temperature to 80°C.
It passes through a mercury tank (11) whose temperature is controlled and is introduced into the reaction chamber (1) together with mercury vapor which acts as a sensitizer. This method of using mercury vapor is called mercury sensitization, and is a widely known technique that is used to cause a decomposition reaction in molecules that do not absorb ultraviolet light or have a low absorption rate. It will be done. In other words, the reaction gas is not directly decomposed by ultraviolet light, but mercury vapor absorbs the ultraviolet light and is excited and becomes a high-energy state, and the high-energy mercury collides with the reaction gas molecules, causing a decomposition reaction. It is something that causes
第２図は本発明製造方法によって製造された超格子素子
の構造及びエネルギバンドを略示している。そして、第
２図（イ〉は斯る超格子素子の断面構造であって、前記
支持体（４）の−主面上に膜厚５０人程度以下の水素化
非晶質シリコン（ａ−５ｉ：Ｈ）膜（１２）及びＰ型の
水素化非晶質シリコンカーバイド（ａ−５ｉＣ’Ｈ）膜
（１３）が交互に周期性をもって積層きれている。第２
図（ロ）は前記各膜（１３）（１２）、（１３）（１２
）、・・・に対応するエネルギバンドプロファイルであ
り、各膜（１３）（１２）、（１３）（１２）、・・・
の伝導帯のエネルギレベルＥＣ１，Ｅｃ＊は周期的に変
動する量子井戸を形成している。FIG. 2 schematically shows the structure and energy band of a superlattice element manufactured by the manufacturing method of the present invention. FIG. 2 (a) shows the cross-sectional structure of such a superlattice element, in which hydrogenated amorphous silicon (a-5i :H) film (12) and P-type hydrogenated amorphous silicon carbide (a-5iC'H) film (13) are alternately stacked with periodicity.Second
Figure (b) shows each of the films (13) (12), (13) (12).
), ..., and each film (13) (12), (13) (12), ...
The conduction band energy levels EC1 and Ec* form a periodically varying quantum well.
上述の如きバンドプロファイルを持つ超格子素子を第１
図の光ＣＶＤ装置を用いて製造するには、先ずぶ料ガス
として、５ｉＨｓ、５ｉｔ）Ｉｓ、Ｓｉ＊Ｈｓ等のシラ
ン系ガスを貯蔵した第１ガスボンベ（７ａ）と、Ｃ−Ｈ
！、５ｉ）１．（ＣＨｎ）−−−（ｎ −１，２，３）
等の炭素源ガスを貯蔵した第２ガスボンベ〈７ｂ）と、
ＢｔＨａ、Ｂ（ＣＨＩ）３等のＰ型不純物であるポロン
源ガスを貯蔵した第３ガスボンベ（７ｃ）とを用意し、
装置のガス供給にセツティングする。この実施例に於い
ては、第１ガスボンベ（７ａ）は５ｉＪｓを貯蔵し、第
２ガスボンベ（７ｂ）はＣｔＨｔを、また第３ガスボン
ベ（７ｃ）はＢ、Ｈ，を各々貯蔵していることにする。A superlattice element having a band profile as described above is first
To manufacture using the photo-CVD apparatus shown in the figure, first, a first gas cylinder (7a) storing a silane gas such as 5iHs, 5it)Is, Si*Hs, etc. as a raw material gas, and a C-H
! , 5i) 1. (CHn)---(n-1,2,3)
a second gas cylinder <7b) storing carbon source gas such as;
A third gas cylinder (7c) storing a poron source gas, which is a P-type impurity such as BtHa and B(CHI)3, is prepared.
Set up the gas supply of the device. In this example, the first gas cylinder (7a) stores 5iJs, the second gas cylinder (7b) stores CtHt, and the third gas cylinder (7c) stores B, H, respectively. do.
反応室（１）内には形成すべき薄膜がａ−５ｉ：Ｈ膜（
１２）であるのか或いはＰ型ａ−５ｉＣ：Ｈ膜（１３）
であるのかに応じてガス選択器（１０）によって周期的
に選択されたＳｉ＊Ｈｓガス或いは斯るＳｉＪｇガスに
ＣｔＨｔ及びＢｔＨａを添加せしめた混合ガスを、５０
℃に温度制御きれた水銀槽（１１）を通して毎分１ｏ〜
ｔｏｏｃｃの割合で供給される。斯る原料ガスの流値及
び混合比率は各々のガス供給系に設けられたマスフロー
コントローラ（９ａ）（９ｂ）＜９ｃ）により制御され
る６反応室（１）内に導入される原料ガスの圧力は０．
１〜１０Ｔｏｒｒとし支持体（４）をヒータ（５）から
の加熱により２００〜３００℃程度に保持する。The thin film to be formed in the reaction chamber (1) is an a-5i:H film (
12) or P-type a-5iC:H film (13)
A mixed gas in which CtHt and BtHa are added to the Si*Hs gas or the SiJg gas, which is periodically selected by the gas selector (10) according to the
1° per minute through a mercury tank (11) whose temperature is controlled to ℃.
Supplied at a rate of toocc. The flow value and mixing ratio of the raw material gas are controlled by the mass flow controllers (9a) (9b) < 9c) provided in each gas supply system.6 The pressure of the raw material gas introduced into the reaction chamber (1) is 0.
The support body (4) is maintained at about 200 to 300° C. by heating from a heater (5) at 1 to 10 Torr.
この状態で反応室（１）内を図示していないロークリポ
ンプ及びターボモリキュラポンプ等により１０” 〜１
０−’ Ｔｏｒｒ程度まで排気し、先ずＰ型のａ−５ｉ
Ｃ：Ｈ膜（１３〉を膜厚にして約５０人形成すべくガス
選択器（１０）によって選択された５ｉＪｓガス＋Ｃ，
Ｈ，ガス＋ＢｔＨ＝ ガスを前記条件通りに反応室（１
）に導入し、光源（２）としての低圧水銀ランプから波
長１８４９人と２５３７人の共鳴線である照射強度５０
ｍＷ／ ｃｍ ’の紫外光を約４５秒間照射する０次い
で原料ガスの供給を停止し、ロータリポンプ等による１
０−５〜１０”’ Ｔｏｒｒ程度の排気を行なう。排気
が終了するとガス選択器（１０）により５ｉＪｓガスの
みを選択し膜厚約５０人のａ−５ｉ ： Ｈ膜（１２）
の形成に入る。光分解に使用される波長は前記Ｐ型ａ−
５ｉＣ：Ｈ膜（１３）と同様１８４９人と２５３７人の
紫外光であり、照射強度５０ｍＷ／ ｃｍ ’の前記紫
外光を約３０秒照射することにより膜厚約５０人のａ−
５ＣＨ膜（１２）が得られる。In this state, the inside of the reaction chamber (1) is pumped by a Rokuri pump (not shown) or a turbo molecular pump (not shown) for 10" to 1
Exhaust the air to about 0-' Torr, and first pump the P type a-5i.
5iJs gas +C selected by the gas selector (10) to form a C:H film (13〉 with a film thickness of about 50 people),
H, gas + BtH = gas was added to the reaction chamber (1
), and the irradiation intensity was 50, which is the resonance line of wavelength 1849 and 2537, from the low-pressure mercury lamp as the light source (2).
UV light of mW/cm' is irradiated for about 45 seconds.Next, the supply of raw material gas is stopped, and 1
Perform evacuation at approximately 0-5 to 10'' Torr. When the evacuation is complete, select only 5iJs gas using the gas selector (10) to form an a-5i:H film (12) with a film thickness of approximately 50.
begins to form. The wavelength used for photolysis is the P type a-
As with the 5iC:H film (13), the ultraviolet light was applied to 1849 and 2537 people, and by irradiating the above ultraviolet light with an irradiation intensity of 50 mW/cm' for about 30 seconds, a film thickness of about 50 people was obtained.
A 5CH film (12) is obtained.
そして、再び反応室（１）内の排気を行なった後、Ｐ型
のａ−５ｉＣ二Ｈ膜（１３）を５ｉｘＨｓガス＋ＣＪｓ
ガス十Ｂｔｕｓガスの光分解により得、排気後５ｉｌｌ
ｓガスのみによりａ−５ｉ：ＨＩＩ（１２）を得る。こ
の様な工程の繰返しによって、Ｐ型ａ−５ｔＣｉＨ膜（
１３）とａ−５ｉ：Ｈ膜（１２〉とを周期的に積層した
超格子素子が製造される。After evacuating the reaction chamber (1) again, the P-type a-5iC diH film (13) was heated using 5ixHs gas + CJs gas.
Gas obtained by photolysis of 10Btus gas, 5ill after exhausting
A-5i:HII (12) is obtained using only s gas. By repeating these steps, a P-type a-5tCiH film (
13) and the a-5i:H film (12>) are periodically laminated to produce a superlattice element.
さて、上記実施例にあっては原料ガスを水銀槽（１１）
を通して反応室（１）に導いていたが、この実施例に用
いられる原料ガス即ち５ｔｌＨ＊、Ｃ□Ｈ，ＢｔＨａは
水銀増感法を用いることなく光分解することができるの
で、この場合上記原料ガスをバイパス路（ＢＬ）を介し
て直接反応室（１）に導入きせることができる。ただこ
の実施例にあっては膜厚約５０人のａ−５ｉＣ： Ｈ膜
（１３）の成長に約２分間の時間を必要とし、膜厚約５
０人のａ−５ｉ：Ｈ膜（１２）については約１分〜１分
３０秒の時間を要した。Now, in the above embodiment, the raw material gas is transferred to the mercury tank (11).
However, since the raw material gases used in this example, namely 5tlH*, C□H, and BtHa, can be photodecomposed without using mercury sensitization, in this case, the above raw materials Gas can be introduced directly into the reaction chamber (1) via the bypass line (BL). However, in this example, it takes about 2 minutes to grow the a-5iC:H film (13) with a film thickness of about 50%, and the film thickness is about 50%.
For the a-5i:H film (12) of 0 people, it took about 1 minute to 1 minute and 30 seconds.
斯る製造方法により得られた周期構造体が超格子素子で
あるは否かを評価すべく、タックプロットにより光学的
禁止帯幅Ｅ ｏｐｔを測定したところ１．８６ｅＶなる
値を得た。一方、平均組成比による原料ガスを用いて形
成したアロイ膜のＥｏｐｔは１．８２ｅＶであり、従っ
て同一の原料ガスを使用してもそれらを製造過程に於い
て周期的に切替えて得た周期構造体は僅かながらもＦ、
ｏｐｔの増加が見られることから、量子井戸効果が出
現し超格子素子を形成していることが判明した。In order to evaluate whether the periodic structure obtained by such a manufacturing method is a superlattice element, the optical band gap E opt was measured using a tuck plot, and a value of 1.86 eV was obtained. On the other hand, the Eopt of the alloy film formed using raw material gases with an average composition ratio is 1.82 eV. Therefore, even if the same raw material gases are used, the periodic structure obtained by periodically switching them in the manufacturing process is Although the body is small, F,
Since an increase in opt was observed, it was found that a quantum well effect appeared and a superlattice element was formed.
第３図は本発明の実施例である光ＣＶＤ法により得た超
格子素子と、従来のプラズマＣＶＤ法による超格子素子
との膜質の比較をフォトルミネッセンスの強度に於いて
、その強度が弱いのは欠陥に起因する非発光の再結合中
心によるものであり、斯るフォトルミネッセンス強度が
強いものほど良質な膜であることを意味する。従って、
本発明製造方法により得られた超格子素子の膜はフォト
ルミネッセンス強度が強いことから膜中の欠陥がプラズ
マＣＶＤ法による膜に比して少ないことが判る。Figure 3 shows a comparison of film quality between a superlattice element obtained by the photo-CVD method according to an embodiment of the present invention and a superlattice element obtained by the conventional plasma CVD method. is due to non-luminous recombination centers caused by defects, and the stronger the photoluminescence intensity, the better the quality of the film. Therefore,
Since the film of the superlattice element obtained by the manufacturing method of the present invention has a strong photoluminescence intensity, it can be seen that there are fewer defects in the film compared to a film produced by the plasma CVD method.
（ト） 発明の効果
本発明製造方法は以上の説明から明らかな如く、周期的
に積層される複数の半導体薄膜を光エネルギによる原料
ガスの分解により形成することによって、形成されつつ
ある半導体薄膜をプラズマに曝すことなく製造すること
ができるので、高速荷電粒子によるプラズマダメージを
回避することができ、周期秩序を持つ超格子素子が得ら
れる。(G) Effects of the Invention As is clear from the above description, the manufacturing method of the present invention forms a plurality of periodically laminated semiconductor thin films by decomposing a raw material gas using light energy, thereby reducing the amount of semiconductor thin films that are being formed. Since it can be manufactured without exposure to plasma, plasma damage caused by high-speed charged particles can be avoided, and a superlattice element with periodic order can be obtained.
第１図は本発明製造方法に用いられる光ＣＶＤ装置の概
念図、第２図（イ）は本発明製造方法により製造される
超格子素子の断面図、第２図（ロ）は第２図くイ）のバ
ンドエネルギ図、第３図は本発明製造方法の超格子素子
と従来方法の超格子素子との膜質を比較するためのフォ
トルミネッセンス特性図、を夫々示している。FIG. 1 is a conceptual diagram of the optical CVD apparatus used in the manufacturing method of the present invention, FIG. 2 (a) is a cross-sectional view of a superlattice element manufactured by the manufacturing method of the present invention, and FIG. FIG. 3 shows a band energy diagram of (a) and a photoluminescence characteristic diagram for comparing the film quality of a superlattice element produced by the method of the present invention and a superlattice element produced by a conventional method.
Claims (1)
の半導体薄膜を周期的に積層した超格子素子の製造方法
であって、光エネルギにより反応室内に周期的に導入さ
れる原料ガスを分解して前記複数の半導体薄膜を支持体
上に積層することを特徴とした超格子素子の製造方法。(1) A method for manufacturing a superlattice element in which a plurality of semiconductor thin films having different forbidden band widths and/or conductivity types are periodically laminated, in which a source gas periodically introduced into a reaction chamber is decomposed by light energy. A method for manufacturing a superlattice element, comprising stacking the plurality of semiconductor thin films on a support.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17257085A JPS6232608A (en) | 1985-08-05 | 1985-08-05 | Super-lattice device manufacturing method |
| US06/891,758 US4719123A (en) | 1985-08-05 | 1986-07-31 | Method for fabricating periodically multilayered film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17257085A JPS6232608A (en) | 1985-08-05 | 1985-08-05 | Super-lattice device manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6232608A true JPS6232608A (en) | 1987-02-12 |
Family
ID=15944284
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17257085A Pending JPS6232608A (en) | 1985-08-05 | 1985-08-05 | Super-lattice device manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6232608A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60130822A (en) * | 1983-12-19 | 1985-07-12 | Semiconductor Energy Lab Co Ltd | Method for manufacturing light emitting semiconductor device |
| JPS60211076A (en) * | 1984-04-05 | 1985-10-23 | Fuji Electric Corp Res & Dev Ltd | Formation of electrically conductive multilayer film pattern |
| JPS61222215A (en) * | 1985-03-28 | 1986-10-02 | Canon Inc | superlattice |
-
1985
- 1985-08-05 JP JP17257085A patent/JPS6232608A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60130822A (en) * | 1983-12-19 | 1985-07-12 | Semiconductor Energy Lab Co Ltd | Method for manufacturing light emitting semiconductor device |
| JPS60211076A (en) * | 1984-04-05 | 1985-10-23 | Fuji Electric Corp Res & Dev Ltd | Formation of electrically conductive multilayer film pattern |
| JPS61222215A (en) * | 1985-03-28 | 1986-10-02 | Canon Inc | superlattice |
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