JPS6233316B2 - - Google Patents
Info
- Publication number
- JPS6233316B2 JPS6233316B2 JP15812779A JP15812779A JPS6233316B2 JP S6233316 B2 JPS6233316 B2 JP S6233316B2 JP 15812779 A JP15812779 A JP 15812779A JP 15812779 A JP15812779 A JP 15812779A JP S6233316 B2 JPS6233316 B2 JP S6233316B2
- Authority
- JP
- Japan
- Prior art keywords
- copper
- plating
- lower layer
- etching
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 53
- 238000007747 plating Methods 0.000 claims description 44
- 229910052802 copper Inorganic materials 0.000 claims description 34
- 239000010949 copper Substances 0.000 claims description 34
- 229920005989 resin Polymers 0.000 claims description 32
- 239000011347 resin Substances 0.000 claims description 32
- 239000011889 copper foil Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 17
- 230000001681 protective effect Effects 0.000 claims description 17
- 239000002904 solvent Substances 0.000 claims description 10
- 239000010408 film Substances 0.000 description 32
- 238000005530 etching Methods 0.000 description 30
- 239000004020 conductor Substances 0.000 description 20
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 14
- 229920002120 photoresistant polymer Polymers 0.000 description 13
- 239000000243 solution Substances 0.000 description 12
- -1 orthoquinone azide Chemical class 0.000 description 11
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 9
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 8
- 229920000139 polyethylene terephthalate Polymers 0.000 description 8
- 239000005020 polyethylene terephthalate Substances 0.000 description 8
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 239000007921 spray Substances 0.000 description 7
- 238000005406 washing Methods 0.000 description 7
- 229920002239 polyacrylonitrile Polymers 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- 230000001680 brushing effect Effects 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 125000003277 amino group Chemical group 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- 235000001674 Agaricus brunnescens Nutrition 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910000365 copper sulfate Inorganic materials 0.000 description 3
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 3
- 239000004744 fabric Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- VGTPCRGMBIAPIM-UHFFFAOYSA-M sodium thiocyanate Chemical compound [Na+].[S-]C#N VGTPCRGMBIAPIM-UHFFFAOYSA-M 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 229940114081 cinnamate Drugs 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- WBYWAXJHAXSJNI-VOTSOKGWSA-M trans-cinnamate Chemical compound [O-]C(=O)\C=C\C1=CC=CC=C1 WBYWAXJHAXSJNI-VOTSOKGWSA-M 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- WOAHJDHKFWSLKE-UHFFFAOYSA-N 1,2-benzoquinone Chemical compound O=C1C=CC=CC1=O WOAHJDHKFWSLKE-UHFFFAOYSA-N 0.000 description 1
- HMLSBRLVTDLLOI-UHFFFAOYSA-N 1-(dimethylamino)ethyl 2-methylprop-2-enoate Chemical compound CN(C)C(C)OC(=O)C(C)=C HMLSBRLVTDLLOI-UHFFFAOYSA-N 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- HVVWZTWDBSEWIH-UHFFFAOYSA-N [2-(hydroxymethyl)-3-prop-2-enoyloxy-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(CO)(COC(=O)C=C)COC(=O)C=C HVVWZTWDBSEWIH-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 150000003931 anilides Chemical class 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- BGTFCAQCKWKTRL-YDEUACAXSA-N chembl1095986 Chemical compound C1[C@@H](N)[C@@H](O)[C@H](C)O[C@H]1O[C@@H]([C@H]1C(N[C@H](C2=CC(O)=CC(O[C@@H]3[C@H]([C@@H](O)[C@H](O)[C@@H](CO)O3)O)=C2C=2C(O)=CC=C(C=2)[C@@H](NC(=O)[C@@H]2NC(=O)[C@@H]3C=4C=C(C(=C(O)C=4)C)OC=4C(O)=CC=C(C=4)[C@@H](N)C(=O)N[C@@H](C(=O)N3)[C@H](O)C=3C=CC(O4)=CC=3)C(=O)N1)C(O)=O)=O)C(C=C1)=CC=C1OC1=C(O[C@@H]3[C@H]([C@H](O)[C@@H](O)[C@H](CO[C@@H]5[C@H]([C@@H](O)[C@H](O)[C@@H](C)O5)O)O3)O[C@@H]3[C@H]([C@@H](O)[C@H](O)[C@@H](CO)O3)O[C@@H]3[C@H]([C@H](O)[C@@H](CO)O3)O)C4=CC2=C1 BGTFCAQCKWKTRL-YDEUACAXSA-N 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- FHIVAFMUCKRCQO-UHFFFAOYSA-N diazinon Chemical compound CCOP(=S)(OCC)OC1=CC(C)=NC(C(C)C)=N1 FHIVAFMUCKRCQO-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- KWKXNDCHNDYVRT-UHFFFAOYSA-N dodecylbenzene Chemical compound CCCCCCCCCCCCC1=CC=CC=C1 KWKXNDCHNDYVRT-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000011410 subtraction method Methods 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Electroplating Methods And Accessories (AREA)
- ing And Chemical Polishing (AREA)
- Manufacturing Of Printed Wiring (AREA)
Description
【発明の詳細な説明】
本発明はパタンめつき法によるプリント配線作
製における保護めつきに関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to protective plating in the production of printed wiring by pattern plating.
パタンめつき法によるプリント配線作製におい
ては、銅張り積層板の銅表面のレジストのない所
に電解銅めつきをし、更にはんだ、金などの保護
めつきをつけた後、レジストを除去して露出され
た銅はく部分をエツチングにより除去し、導体配
線が作られている。上記の銅のエツチングに際し
て、パタンめつき銅はその上面(スルホールある
時はその内壁も)のみが、はんだ、金などのめつ
き層によつて保護されているので側面はエツチさ
れ、いわゆるサイドエツチの状態を生じる。ま
た、このためエツチング時間の許容巾は狭い。 When producing printed wiring using the pattern plating method, electrolytic copper plating is applied to the copper surface of the copper clad laminate where there is no resist, and then protective plating with solder, gold, etc. is applied, and then the resist is removed. The exposed copper foil was removed by etching to create conductor wiring. When etching copper as described above, only the top surface (and inner walls of through-holes if there are through holes) is protected by a plating layer of solder, gold, etc., so the side surfaces are etched, resulting in so-called side etching. bring about a condition. Moreover, for this reason, the allowable range of etching time is narrow.
エツチングの進行速度は導体間隔の大小によつ
て異なるので、エツチングされるべき所にエツチ
ング残りを生じないように充分にエツチングを行
なうとサイドエツチの甚しい所を生じ、このため
に導体の形状や大きさが原図と異なつたり、配線
の断面の形がきのこの従断面図状にある。このき
のこの傘の庇部分は、脱落すると電気的短絡の原
因となる。この脱落を避けるためにめつきしたは
んだを熔融するなどの方法が行なわれている。 The rate of progress of etching differs depending on the size of the conductor spacing, so if etching is carried out sufficiently to avoid etching residue where it should be etched, severe side etching will occur, and this will cause the shape and size of the conductor to deteriorate. The shape is different from the original drawing, and the shape of the cross section of the wiring is similar to that of a mushroom. If the eaves of this mushroom umbrella fall off, it can cause an electrical short circuit. In order to avoid this falling off, methods such as melting the plated solder are used.
銅張り積層板の銅箔の厚さが薄い方がエツチン
グ所要時間が短くなり、パタンめつき銅のサイド
エツチも小さくなる。しかしながら、極端に薄い
銅箔は、取扱いが困難、孔があつて裏面の樹脂質
が表面に出て拡がる、支持金属膜を必要とするな
どの技術的および経済的の理由から通常18ミクロ
ン以上の厚さの銅箔が積層板に用いられている。 The thinner the copper foil in the copper-clad laminate, the shorter the time required for etching, and the smaller the side etch of patterned copper. However, extremely thin copper foils are usually thinner than 18 microns for technical and economic reasons, such as being difficult to handle, having holes that cause the resin on the back side to come out and spread, and requiring a supporting metal film. thick copper foil is used in the laminate.
パタンめつき銅の上面だけでなく、側面にも保
護めつきをつけてエツチングを行なえば、パタン
めつき銅のサイドエツチが防止され、その下の銅
箔のサイドエツチも小さくなり、全体としてのサ
イドエツチは側面保護めつきがない場合にくらべ
て著しく小さくなると考え、鋭意検討した結果本
発明に到達した。 By applying protective plating not only to the top surface of the pattern-plated copper but also to the side surfaces before etching, side etching of the pattern-plated copper can be prevented, and the side etch of the copper foil underneath can also be reduced, reducing the overall side etch. We thought that the size would be significantly smaller than that without side protective plating, and as a result of intensive study, we arrived at the present invention.
すなわち本発明は、銅張り積層板の銅箔の表面
に上下2層の樹脂層(上層を構成する樹脂と下層
を構成する樹脂とは対溶媒性が異なり、下層は上
層の1/10以下の厚さとする)からなるレジスト像
を形成しパタン銅めつきをした後、該レジスト像
の上層を除去してからパタンめつき銅に保護めつ
きをつけ、次いでレジスト像の下層を除去するこ
とを特徴とするパタンめつき銅側面の保護めつき
法である。 In other words, the present invention provides two upper and lower resin layers on the surface of the copper foil of a copper-clad laminate (the resin constituting the upper layer and the resin constituting the lower layer have different solvent resistance, and the lower layer has a resin layer that is less than 1/10 of the upper layer. After forming a resist image consisting of (with a thickness of This is a protective plating method for patterned copper sides.
本発明の方法により、パタン銅めつきの後、対
溶媒性が異なる2種の樹脂層からなるレジスト像
の除去を2段に行ない、まずレジスト層の厚さの
大部分を占める上層を除去して保護めつきをパタ
ンめつき銅につけ、次いでレジストのうすい下層
を除去して積層板の銅箔をエツチングにより除去
すれば、サイドエツチを著しく小さくすることが
できる。 According to the method of the present invention, after patterned copper plating, the resist image consisting of two types of resin layers with different solvent resistance is removed in two stages. First, the upper layer, which accounts for most of the thickness of the resist layer, is removed. Side etch can be significantly reduced by applying a protective plating to the patterned copper, then removing the thin underlayer of resist and etching away the copper foil of the laminate.
本発明方法を図面により説明する。第1図は、
銅張り積層板1の銅箔2の表面に、下層3と上層
4の2層の樹脂層からなるレジスト像を形成した
状態を示す。これにパタン銅めつきをし、レジス
ト像のない部分に、パタンめつき銅5を形成して
第2図のようにした後、第3図に示すようにレジ
スト像の上層4を除去する。次に、露出している
パタンめつき銅部分に、保護めつき6を施し、第
4図のようにした後、第5図のように残存してい
るレジスト像の下層3を除去する。最後に、露出
した銅箔2を常法によりエツチングすることによ
り、6図のようにサイドエツチの小さいパタンが
得られる。 The method of the present invention will be explained with reference to the drawings. Figure 1 shows
A resist image consisting of two resin layers, a lower layer 3 and an upper layer 4, is formed on the surface of a copper foil 2 of a copper-clad laminate 1. After patterned copper plating is applied to this, patterned copper 5 is formed in the areas where there is no resist image, as shown in FIG. 2, the upper layer 4 of the resist image is removed as shown in FIG. Next, protective plating 6 is applied to the exposed patterned copper portions as shown in FIG. 4, and then the remaining resist image lower layer 3 is removed as shown in FIG. Finally, by etching the exposed copper foil 2 using a conventional method, a pattern with small side etch as shown in FIG. 6 is obtained.
本発明に適したレジスト像は、その上層を溶解
あるいは著しく膨潤させる溶媒に、下層は実質的
に膨潤あるいは溶解せず、かつ別の溶媒で溶解も
しくは著しく膨潤して除去し得るものであればよ
い。このようなレジスト像はスクリン印刷によつ
ても、あるいは全面のうすい樹脂被膜上に上層の
みスクリン印刷し、非被覆部の下層を除去しても
作ることができるが、側面保護めつきを要する高
精度の配線は一般に感光性樹脂を用いて作られ
る。この場合は、感光性樹脂にフオトマスクを密
着し、露光・現像するという通常の方法により、
簡単にレジスト像を形成することができる。 A resist image suitable for the present invention may be one in which the upper layer is dissolved or significantly swollen, but the lower layer is not substantially swollen or dissolved, and can be removed by being dissolved or significantly swollen in another solvent. . Such a resist image can be created by screen printing, or by screen printing only the upper layer on a thin resin coating on the entire surface and removing the lower layer in the uncoated area, but it is possible to create a resist image with a high profile that requires side protection plating. Precision wiring is generally made using photosensitive resin. In this case, use the usual method of attaching a photomask to the photosensitive resin, exposing it to light, and developing it.
A resist image can be easily formed.
上記のような溶解および膨潤特性を持つレジス
ト像を感光性樹脂を用いて作るには感光性樹脂と
して、光架橋性または光架橋重合性樹脂のうす膜
と露光により溶媒親和性が変化する(光重合の場
合も含む)感光性樹脂の厚膜の組み合わせ、(た
とえば、アミノ基を持つ重合体とオルトキノンア
ジドからなる感光性樹脂の上層とポリケイ皮酸ビ
ニル系感光性樹脂の下層との組み合せ等)、厚い
上層を溶解あるいは著しく膨潤し得る溶媒がうす
い下層(感光膜でなくてもよい)をこのようにし
得ず、逆に下層を溶解あるいは著しく膨潤し得る
溶媒が、上層をこのようにできないような上下層
の組み合わせ(たとえば、上層としては上記例の
アミノ基含有重合体感光性樹脂、あるいはペンタ
エリスリトールトリアクリレートとポリメチルメ
タクリレートの混合物、下層としてはポリアクリ
ロニトリルの組み合せ等)などがあるが、いずれ
の組み合わせでも現像、めつきなどの操作中に上
層と下層とが剥離しないように両者間の接着が充
分に強いことが必要である(接着強化に中間層を
設けてもよい)。 To create a resist image with the above-mentioned dissolution and swelling characteristics using a photosensitive resin, the photosensitive resin must be made of a thin film of photocrosslinkable or photocrosslinkable polymerizable resin and whose solvent affinity changes upon exposure to light (photosensitive resin). A combination of a thick film of photosensitive resin (including the case of polymerization), (for example, a combination of an upper layer of a photosensitive resin made of a polymer with an amino group and orthoquinone azide and a lower layer of a polyvinyl cinnamate photosensitive resin, etc.) ), a solvent that can dissolve or significantly swell a thick upper layer cannot do this to a thin lower layer (which does not have to be a photosensitive film), and conversely, a solvent that can dissolve or significantly swell a lower layer cannot do this to an upper layer. There are combinations of upper and lower layers such as (for example, the upper layer is a combination of the above-mentioned amino group-containing polymer photosensitive resin or a mixture of pentaerythritol triacrylate and polymethyl methacrylate, and the lower layer is a combination of polyacrylonitrile, etc.). In any combination, it is necessary that the adhesion between the upper and lower layers is sufficiently strong so that they do not peel off during operations such as development and plating (an intermediate layer may be provided to strengthen the adhesion).
レジスト像の上層を除去するとき、下層に損傷
を与えるような操作をしてはならないから上層は
溶解除去されることが望ましい。特に下層を膨潤
させない溶媒で溶解除去できることが望ましい。
これらの点で実施例に示されるようなアミノ基を
持つ重合体と、オルトキノンジアジドからなる感
光性樹脂のレジスト像は、現像溶媒としてしばし
ば用いられる1・1・1−トリクロルエタンで溶
解除去し得るので上層として極めて都合がよい。
この感光性樹脂は感光基が光分解型であるが、こ
のことは下記の点でも本発明に都合がよい。すな
わち、厚い上層の感光材が光分解型であると、上
層の感光波長の光は下層に到達しやすいが、分解
型でない場合には、上下層の感光波長域の重なり
が大きいと上層の適正露光時間では下層の露光が
不足する。 When removing the upper layer of the resist image, it is desirable to remove the upper layer by dissolving it, since any operation that would damage the lower layer must not be performed. In particular, it is desirable that the lower layer can be dissolved and removed using a solvent that does not swell.
In these respects, resist images of photosensitive resins made of polymers with amino groups and orthoquinone diazide as shown in the examples can be dissolved and removed with 1,1,1-trichloroethane, which is often used as a developing solvent. Therefore, it is extremely convenient as an upper layer.
This photosensitive resin has a photosensitive group that is photodegradable, which is also advantageous for the present invention in the following respects. In other words, if the photosensitive material in the thick upper layer is a photodegradable type, the light at the photosensitive wavelength of the upper layer will easily reach the lower layer, but if it is not a decomposable type, and the overlap of the photosensitive wavelength ranges of the upper and lower layers is large, the upper layer will not be suitable for use. The exposure time is insufficient for exposing the lower layer.
上記のような2層のレジスト像を形成するため
の感光性樹脂膜を銅面に作る方法としては、下層
を銅面への塗布乾燥法で形成した上に上層を塗布
乾燥法で形成しても、また別途形成した上層用の
膜を貼りつけてもよく、更にまた上下両層を重ね
合わせた膜を銅面に貼りつけてもよい。それぞれ
の樹脂の性質および目標とする配線の種類に応じ
て適宜の方法を採用してよい。 A method of forming a photosensitive resin film on a copper surface to form a two-layer resist image as described above is to form the lower layer by coating and drying the copper surface, and then forming the upper layer by coating and drying. Alternatively, a separately formed upper layer film may be attached, or a film in which both the upper and lower layers are superimposed may be attached to the copper surface. An appropriate method may be adopted depending on the properties of each resin and the target type of wiring.
下層は銅に接着性のよいことが必要であるが、
特に別途形成した下層膜(一般に上層と重ね合わ
せたもの)を銅面に貼りつけて用いる場合には接
着しやすいものを用いることが大切である。ま
た、上層の現像時除去される部分の下にある下層
部分が同時に除去されるような下層を採用する
と、この下層除去を別途に行なう必要がなく、工
程数が減少する。 The lower layer needs to have good adhesion to copper, but
In particular, when a separately formed lower layer film (generally overlaid with an upper layer) is attached to a copper surface, it is important to use a material that is easy to adhere to. Further, if a lower layer is used in which a lower layer portion below a portion of the upper layer that is removed during development is removed at the same time, there is no need to separately remove this lower layer, and the number of steps is reduced.
下層が厚いとパタンめつき銅側面の保護めつき
される部分が減少する。また、下層が感光性でな
い場合に、下層が厚いと現像後の下層露出部の除
去の際、上層レジスト像の下にある下層の周辺部
も除去されることがある。他方、下層が極端にう
すいと気孔があつたり、操作中に損傷をうけやす
いなどの欠点がある。これらの理由から適当な下
層の厚さは、下層物質の性質、下層形成方法、上
層の厚さ、配線作製操作の種類などによつて異な
るが通常0.3〜3ミクロンであつて、上層の10分
の1以下であることが多い。 If the lower layer is thicker, the area on the side surface of the patterned copper that is protected by plating will be reduced. Further, when the lower layer is not photosensitive and the lower layer is thick, the peripheral portion of the lower layer below the upper resist image may also be removed when the exposed portion of the lower layer is removed after development. On the other hand, if the lower layer is extremely thin, it has disadvantages such as pores and being easily damaged during operation. For these reasons, the appropriate thickness of the lower layer varies depending on the properties of the lower layer material, the method of forming the lower layer, the thickness of the upper layer, the type of wiring fabrication operation, etc., but is usually 0.3 to 3 microns, and is approximately 10 minutes thicker than the upper layer. It is often less than 1.
本発明の方法を用いる導体パタン作製の操作
は、レジストの除去を2段にすること以外では普
通のパタンめつき法と同じものが多いが、なお2
段除去にともなつていくつかの相違点がある。上
下層がいつしよに現像される場合は問題ないが、
現像時に下層が残る場合には当然のことながら次
のめつき前処理の操作を行なう前に上層のレジス
トパタンを損わない方法で下層の露出部を除去す
る必要がある。下層がポリアクリルニトリルの場
合は、チオシアン酸ソーダ水溶液で溶解除去で
き、いわゆる溶媒現像型感光性樹脂からなるレジ
ストパタンを損傷することはない。通常のめつき
前処理とパタン銅めつきののちに行なうレジスト
上層の除去においては、うすい下層を損傷するお
それのあるブラシングなどの操作を行なつてはな
らない。 Most of the operations for producing conductor patterns using the method of the present invention are the same as ordinary pattern plating methods, except that the resist is removed in two stages.
There are some differences with step removal. There is no problem if the upper and lower layers are developed at the same time, but
If the lower layer remains during development, it is of course necessary to remove the exposed portion of the lower layer by a method that does not damage the resist pattern of the upper layer before performing the next plating pretreatment operation. If the lower layer is made of polyacrylonitrile, it can be removed by dissolving it with an aqueous solution of sodium thiocyanate, without damaging the resist pattern made of a so-called solvent-developable photosensitive resin. When removing the upper resist layer after normal plating pretreatment and pattern copper plating, operations such as brushing that may damage the thin lower layer must not be performed.
一般に保護めつきの前に行なわれる前処理とし
ては過硫安溶液によるエツチングと酸洗滌を行な
う方がよいが、酸性金めつきでは上記のエツチン
グをしなくても障害はみられない。 Generally, it is better to perform etching with an ammonium persulfate solution and acid washing as pretreatments performed before protective plating, but no problems are observed in acid gold plating even without the above etching.
保護めつきは通常の場合と同様に行ない得る
が、保護めつきの厚さは、銅張り積層板の銅箔の
厚さが18ミクロンの場合、金めつきは言うまでも
なく、はんだめつきでも2ミクロンで保護の目的
を達成できる。勿論めつきを厚くしても差支えな
いし、これを導体間隔を小さくするのに利用して
もよい。 Protective plating can be done in the same way as in normal cases, but if the copper foil of the copper-clad laminate has a thickness of 18 microns, the thickness of the protective plating is 2.2 microns even with solder plating, not to mention gold plating. Microns can achieve the purpose of protection. Of course, the plating may be made thicker, and this may also be used to reduce the conductor spacing.
保護めつきをした後の下層レジストの除去にお
いては、溶媒中でブラシングするなどの各種の操
作を用いて差支えないが、下層が無架橋の場合に
はブラシングなどは必要でない。 In removing the lower resist layer after protective plating, various operations such as brushing in a solvent may be used, but if the lower layer is non-crosslinked, brushing is not necessary.
下層レジスト除去で露出した銅箔のエツチング
は通常の方法で行なわれる。この部分はサイドエ
ツチをうけるが、その程度は銅張り積層板にレジ
スト像をつけてエツチングしたのと同じ位であ
る。すなわち、本発明の方法によつて側面保護め
つきした場合の導体配線の断面形状は、18ミクロ
ン銅箔に数十ミクロンの厚いレジスト像(断面は
矩形)をつけたものをエツチングした場合の銅と
レジスト全体の断面形状に似ている。従つて、き
のこの傘の庇のような脱落しやすい部分はなく、
プリント配線板面を強くこすつても配線周辺部が
折れ曲ることもない。導体巾と導体間隔が導体高
さよりも小さい配線でしかも外力によつて変形さ
れ難いものを作り得る。導体巾や導体間隔が小さ
い配線の要求は将来増加すると考えられるが、巾
や間隔が小さく厚い側面が垂直なレジスト像を作
り得てもこれを導体像へ移すには、付加法でも削
減法でも困難がある。本発明の側面保護めつきの
方法は、微細導体像を得る一つのすぐれた方法で
ある。 Etching of the copper foil exposed by removing the lower resist layer is carried out by a conventional method. This area undergoes side etching, but the degree of side etching is the same as etching a resist image on a copper-clad laminate. In other words, the cross-sectional shape of the conductor wiring when side protective plating is performed using the method of the present invention is the same as that of copper when a resist image (cross section is rectangular) with a thickness of several tens of microns is etched on an 18-micron copper foil. and resembles the cross-sectional shape of the entire resist. Therefore, there are no parts that easily fall off like the eaves of a mushroom umbrella.
Even if the printed wiring board surface is rubbed strongly, the peripheral portion of the wiring will not bend. It is possible to create a wiring whose conductor width and conductor spacing are smaller than the conductor height and which is not easily deformed by external force. It is thought that the demand for wiring with small conductor widths and conductor spacing will increase in the future, but even if it is possible to create a resist image with small widths and spacings and thick vertical sides, it is difficult to transfer this to a conductor image using either an additive method or a subtraction method. There are difficulties. The side protective plating method of the present invention is one excellent method for obtaining fine conductor images.
以下実施例を挙げて本発明をさらに具体的に説
明する。 EXAMPLES The present invention will be described in more detail below with reference to Examples.
実施例 1
メタクリル酸メチル、アクリル酸エチル、アク
リルニトリル、メタクリル酸−2−N・N−ジメ
チルアミノエチルの共重合体(重量比55:25:
13:7)と、この重合体重量の1/20のナフトキノ
ン−(1・2)−ジアジド−(2)−5−スルホ(4′−
ヒドロキシ)アニリドのメチルエチルケトン溶液
を厚さ25ミクロンのポリエチレンテレフタレート
膜に塗布乾燥して厚さ40ミクロンの感光性樹脂膜
を作つた。銅(厚さ18ミクロン)張りガラス布エ
ポキシ積層板の研磨した銅面に光架橋型感光性樹
脂溶液“コダツクフオトレジスト”(ポリケイ皮
酸ビニル系感光性樹脂)を塗布乾燥して厚さ約1
ミクロンの膜を形成した上に、上記の厚い感光膜
を熱圧着し、ポリエチレンテレフタレート膜を剥
がした。1インチ当り300線のフオトマスクフイ
ルムを感光膜面に真空密着して超高圧水銀灯に露
光し、20℃の1・1・1−トリクロルエタンのス
プレで現像し、過硫安溶液(過硫安240g/、
硫酸16g/)の室温のスプレで軽いエツチング
と稀塩酸洗滌ののち約35ミクロンの厚さに硫酸銅
浴で電解めつきをした。熱湯に約10秒浸漬してア
ミノ基含有ポリマをトリクロルエタンに可溶化
し、現像と同じ操作により上記ポリマを除去し
た。稀塩酸で洗滌してから酸性金めつき浴で約2
ミクロンの厚さに電解めつきを行なつた。“コダ
ツクフオトレジスト”の残存膜を塩化メチレン中
のブラシングで除去し、ついで50℃の30%塩化鉄
溶液のスプレでエツチングを行なつて微細導体像
を得た。導体巾へフオトマスクの不透明部の巾と
金めつき厚さの2倍の和に一致し、導体間にエツ
チのこりは全くなく、サイドエツチは銅箔に由来
する部分にわずかにみられるだけであつた。上面
を布でこすつても、導体周辺部の折れ曲りあるい
は脱落による導体巾の減少はみとめられなかつ
た。Example 1 Copolymer of methyl methacrylate, ethyl acrylate, acrylonitrile, and 2-N/N-dimethylaminoethyl methacrylate (weight ratio 55:25:
13:7) and naphthoquinone-(1,2)-diazide-(2)-5-sulfo(4'-
A solution of hydroxy)anilide in methyl ethyl ketone was applied to a 25 micron thick polyethylene terephthalate film and dried to produce a 40 micron thick photosensitive resin film. A photo-crosslinkable photosensitive resin solution "Kodatsuku Photoresist" (polyvinyl cinnamate photosensitive resin) is applied to the polished copper surface of a copper (thickness 18 micron) clad glass cloth epoxy laminate and dried to a thickness of approx. 1
On top of the micron film formed, the above thick photoresist film was thermocompression bonded, and the polyethylene terephthalate film was peeled off. A photomask film with 300 lines per inch was vacuum-adhered to the photoresist surface, exposed to an ultra-high pressure mercury lamp, developed with a spray of 1,1,1-trichloroethane at 20°C, and ammonium persulfate solution (ammonium persulfate 240g/ ,
After light etching with a room temperature spray of sulfuric acid (16g/) and washing with dilute hydrochloric acid, electrolytic plating was performed in a copper sulfate bath to a thickness of approximately 35 microns. The amino group-containing polymer was solubilized in trichloroethane by immersion in hot water for about 10 seconds, and the polymer was removed by the same operation as development. After washing with dilute hydrochloric acid, wash in an acidic gold plating bath for about 2 hours.
Electrolytic plating was performed to a thickness of microns. The remaining film of "Kodatsu Photoresist" was removed by brushing in methylene chloride, and then etched by spraying with a 30% iron chloride solution at 50°C to obtain a fine conductor image. The conductor width matched the sum of the width of the opaque part of the photomask and twice the gold plating thickness, and there were no etch marks between the conductors, and only a slight side etch was observed in the part originating from the copper foil. . Even if the upper surface was rubbed with a cloth, no reduction in the conductor width due to bending or falling off of the peripheral portion of the conductor was observed.
実施例 2
実施例1と全く同様な操作で、感光膜を2重に
つけた銅張り積層板からポリエチレンテレフタレ
ート膜を剥がし、1インチ当り80線のフオトマス
クフイルムを真空密着して、400nmに中心波長
を持つ螢光灯をならべて作つた発光面に露光し
た。実施例1と同様に20℃のトリクロルエタンス
プレによる現像、過硫安溶液での軽いエツチング
と稀塩酸洗滌によるめつき前処理、および硫酸銅
浴中での電解めつき(厚さ約35ミクロン)を行な
つた。熱湯に浸漬してからレジスト像の上層をト
リクロルエタンスプレで溶解除去し、過硫安溶液
のスプレおよび稀塩酸洗滌の前処理ののち無光沢
はんだめつき浴中で2ミクロンの厚さに電解めつ
きした。塩化メチレン中でブラシングして残存レ
ジストを除去してから50℃の過硫安溶液のスプレ
でエツチングを行ない、上記レジスト除去で露出
した銅箔を除去した。この実施例のはんだめつき
の厚さは通常ののはんだめつきにくらべて遥かに
うすいがパタンめつき銅のエツチングは防止され
ていた。導体間にエツチ残りはなく、サイドエツ
チはパタンめつき銅の下の基板銅箔にわずかにあ
るだけであつた。Example 2 In exactly the same manner as in Example 1, the polyethylene terephthalate film was peeled off from a copper-clad laminate with double layers of photoresist film, and a photomask film with 80 lines per inch was vacuum-adhered, and the center wavelength was set at 400 nm. The light was exposed to a light-emitting surface made by arranging fluorescent lamps with holders. As in Example 1, development with trichloroethane spray at 20°C, pre-plating treatment with light etching with ammonium persulfate solution and washing with dilute hydrochloric acid, and electrolytic plating (about 35 microns thick) in a copper sulfate bath were carried out. I did it. After immersion in hot water, the upper layer of the resist image was dissolved and removed using trichloroethane spray, and after pretreatment of spraying with ammonium persulfate solution and washing with dilute hydrochloric acid, it was electrolyzed to a thickness of 2 microns in a matte soldering bath. It hit me. The remaining resist was removed by brushing in methylene chloride, and etching was performed by spraying an ammonium persulfate solution at 50° C. to remove the copper foil exposed by the resist removal. Although the thickness of the solder plating in this example was much thinner than that of ordinary solder plating, etching of the patterned copper was prevented. There was no remaining etching between the conductors, and only a small amount of side etching was present in the copper foil of the substrate below the patterned copper.
実施例 3
可塑剤としてドデシルベンゼンを2%添加した
“コダツクフオトレジスト”をポリエチレン板の
上に塗布乾燥して厚さ約1.5ミクロンの膜を作
り、実施例1と同様にしてポリエチレンテレフタ
レート膜上に作つた感光膜(厚さ40ミクロン)と
向いあわせて熱ローラを通して貼りあわせ、ポリ
エチレン板を剥がして“コダツクフオトレジス
ト”膜を上記の厚い感光膜上に移した。実施例1
と同様な研磨した銅張り積層板の銅面に上記2重
感光膜を熱ローラで貼りつけた。これ以後の操作
を実施例2と同様に行ない、実施例2と同様な結
果を得た。Example 3 "Kodatsu Photoresist" to which 2% dodecylbenzene was added as a plasticizer was coated on a polyethylene plate and dried to form a film with a thickness of approximately 1.5 microns, and then applied on a polyethylene terephthalate film in the same manner as in Example 1. The photoresist film (thickness: 40 microns) made in 1992 was pasted face to face with a heated roller, the polyethylene plate was peeled off, and the "Kodatsu Photoresist" film was transferred onto the thick photoresist film. Example 1
The above double photosensitive film was attached to the copper surface of a polished copper-clad laminate similar to the above using a hot roller. The subsequent operations were carried out in the same manner as in Example 2, and the same results as in Example 2 were obtained.
実施例 4
銅(厚さ18ミクロン)張りガラス布エポキシ積
層板の研磨した銅面にポリアクリルニトリルのジ
メチルフオルムアミド溶液を塗布乾燥して約0.5
ミクロンの厚さの膜を形成した。この上に実施例
1で用いたと同じポリエチレンテレフタレート膜
上の感光膜を熱圧着した。ポリエチレンテレフタ
レート膜を剥がしてから、実施例2と同様に1イ
ンチ当り80線のフオトマスクフイルムを真空密
着、螢光灯で露光、ついでトリクロルエタンスプ
レで現像した。チオシアン酸ソーダの52%水溶液
に、上記現像ずみの積層板を浸漬してフオトレジ
スト像で覆われていない部分のポリアクリルニト
リルを溶解除去し、ついで過硫安溶液による軽い
エツチングおよび稀酸洗滌ののち硫酸銅浴中で電
解めつきを約35ミクロンの厚さに行なつた。実施
例1と同様に熱水に浸漬してからトリクロルエタ
ンスプレでフオトレジスト像を溶解除去し、稀酸
洗滌をしてから酸性金めつき浴で電解めつきを約
2ミクロンの厚さに行なつた。52%のチオシアン
酸ソーダ溶液で洗つてポリアクリルニトリルを除
去してから実施例1と同様に塩化鉄溶液でエツチ
ングをするとエツチ残りがなく、しかもサイドエ
ツチが積層板の銅箔に由来する部分にのみわずか
にある導体像が得られた。Example 4 A dimethylformamide solution of polyacrylonitrile was applied to the polished copper surface of a copper (thickness: 18 microns) clad glass cloth epoxy laminate and dried.
A film with a thickness of microns was formed. A photoresist film on the same polyethylene terephthalate film as used in Example 1 was bonded thereon by thermocompression. After peeling off the polyethylene terephthalate film, a photomask film with 80 lines per inch was vacuum-adhered in the same manner as in Example 2, exposed to light using a fluorescent lamp, and then developed with trichloroethane spray. The developed laminate was immersed in a 52% aqueous solution of sodium thiocyanate to dissolve and remove the polyacrylonitrile in the areas not covered by the photoresist image, followed by light etching with an ammonium persulfate solution and dilute acid washing. Electrolytic plating was done in a copper sulfate bath to a thickness of about 35 microns. As in Example 1, the photoresist image was immersed in hot water, then dissolved and removed using trichloroethane spray, washed with dilute acid, and then electrolytically plated in an acidic gold plating bath to a thickness of approximately 2 microns. Summer. After washing with a 52% sodium thiocyanate solution to remove polyacrylonitrile and etching with an iron chloride solution in the same manner as in Example 1, there was no etching residue, and the side etching was only on the parts of the laminate that originated from the copper foil. A slight conductor image was obtained.
実施例 5
実施例4のようにポリアクリルニトリルをうす
い下層として用いる場合には、架橋性ポリマを上
層に用いることができる。実施例4の感光性樹脂
膜の代りに架橋重合性感光性樹脂膜“リストンT
−1215”を貼りつけ、ポリエチレンテレフタレー
ト膜を除去せずにフオトマスクを真空密着し、高
圧水銀灯の平行化光に露光した。ポリエチレンテ
レフタレート膜を剥がして20℃のトリクロルエタ
ンスプレで現像し、以下パタン銅めつきまで、実
施例4と同じ操作を行なつた。実施例4と異なつ
て塩化メチレンに漬けてフオトレジスト像を除去
した。それ以後の操作は実施例4と同様に行な
い、実施例4と同様な結果を得た。Example 5 When polyacrylonitrile is used as a thin lower layer as in Example 4, a crosslinkable polymer can be used as an upper layer. In place of the photosensitive resin film in Example 4, a cross-linked polymerizable photosensitive resin film “Riston T” was used.
-1215'' was pasted, a photomask was vacuum-adhered without removing the polyethylene terephthalate film, and exposed to collimated light from a high-pressure mercury lamp.The polyethylene terephthalate film was peeled off and developed with trichloroethane spray at 20°C, and the following patterned copper The same operations as in Example 4 were performed until plating.Different from Example 4, the photoresist image was removed by dipping in methylene chloride.The subsequent operations were performed in the same manner as in Example 4. Similar results were obtained.
第1図は銅張り積層板の銅箔の表面に上下2層
の樹脂層からなるレジスト像を形成した状態の断
面図を示す。第2図はパタン銅めつきをした時の
断面図を、第3図は上層を除去した時の断面図を
示す。第4図は保護めつきをした時の断面図を、
第5図は下層を除去した時の断面図を示す。第6
図はエツチングした時の断面図を示す。
1……銅張り積層板、2……銅箔、3……レジ
スト像の下層、4……レジスト像の上層、5……
パタンめつき銅、6……保護めつき。
FIG. 1 shows a cross-sectional view of a copper-clad laminate in which a resist image consisting of two upper and lower resin layers is formed on the surface of the copper foil. FIG. 2 shows a cross-sectional view after patterned copper plating, and FIG. 3 shows a cross-sectional view after removing the upper layer. Figure 4 shows a cross-sectional view when protective plating is applied.
FIG. 5 shows a cross-sectional view when the lower layer is removed. 6th
The figure shows a cross-sectional view after etching. 1... Copper-clad laminate, 2... Copper foil, 3... Lower layer of resist image, 4... Upper layer of resist image, 5...
Copper with pattern plating, 6...protective plating.
Claims (1)
層(上層を構成する樹脂と下層を構成する樹脂と
は対溶媒性が異なり、下層は上層の1/10以下の厚
さとする)からなるレジスト像を形成しパタン銅
めつきをした後、該レジスト像の上層を除去して
からパタンめつき銅に保護めつきをつけ、次いで
レジスト像の下層を除去することを特徴とするパ
タンめつき銅側面の保護めつき法。1 Two resin layers, upper and lower, on the surface of the copper foil of a copper-clad laminate (the resin that makes up the upper layer and the resin that makes up the lower layer have different solvent resistance, and the thickness of the lower layer is 1/10 or less of the upper layer) After forming a resist image consisting of the resist image and pattern copper plating, the upper layer of the resist image is removed, a protective plating is applied to the patterned copper, and then the lower layer of the resist image is removed. Protective plating method for plated copper sides.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15812779A JPS5681679A (en) | 1979-12-07 | 1979-12-07 | Plating method for protecting side face of pattern plated copper |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15812779A JPS5681679A (en) | 1979-12-07 | 1979-12-07 | Plating method for protecting side face of pattern plated copper |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5681679A JPS5681679A (en) | 1981-07-03 |
| JPS6233316B2 true JPS6233316B2 (en) | 1987-07-20 |
Family
ID=15664871
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15812779A Granted JPS5681679A (en) | 1979-12-07 | 1979-12-07 | Plating method for protecting side face of pattern plated copper |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5681679A (en) |
-
1979
- 1979-12-07 JP JP15812779A patent/JPS5681679A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5681679A (en) | 1981-07-03 |
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