JPS6233329Y2 - - Google Patents
Info
- Publication number
- JPS6233329Y2 JPS6233329Y2 JP1982163787U JP16378782U JPS6233329Y2 JP S6233329 Y2 JPS6233329 Y2 JP S6233329Y2 JP 1982163787 U JP1982163787 U JP 1982163787U JP 16378782 U JP16378782 U JP 16378782U JP S6233329 Y2 JPS6233329 Y2 JP S6233329Y2
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- heat sink
- resin material
- semiconductor device
- cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/884—Die-attach connectors and bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Cooling Or The Like Of Electrical Apparatus (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
【考案の詳細な説明】
技術分野
この考案は電子機器等の半導体装置被取付部材
に放熱板兼用の固着基板を絶縁して取付ける樹脂
封止型半導体装置に関する。[Detailed Description of the Invention] Technical Field This invention relates to a resin-sealed semiconductor device in which a fixed substrate that also serves as a heat sink is insulated and attached to a member to which the semiconductor device is attached, such as an electronic device.
背景技術
樹脂封止型半導体装置は一般に放熱板兼用の固
着基板の素子非固着面である裏面をシヤーシベー
スや放熱器等の半導体装置被取付部材に接合させ
てアースした状態で取付けているが、最近はコレ
クタ絶縁タイプのトランジスタのように放熱板を
被取付部材に絶縁して取付ける絶縁タイプのもの
が多く要求され、普及しつつある。この絶縁タイ
プの樹脂封止型半導体装置の一般的な構造は放熱
板の裏面を露出させて外装樹脂材をモールド成形
したもので、これの被取付部材への実装はその放
熱板と被取付部材との間にマイカ板等を熱伝導性
の良い薄い絶縁板を介在させて行つている。しか
し、この構造及び取付方法だと実装時に絶縁板を
位置決めして敷かねばならず取付工数が多くなつ
て作業性が極めて悪くなり、また半導体装置と絶
縁板が別個体であるので両者の保守管理が繁雑と
なる欠点があつた。BACKGROUND ART Resin-sealed semiconductor devices are generally mounted with the back surface of a fixed substrate that also serves as a heat sink, which is the non-element fixed surface, bonded to a member to which the semiconductor device is mounted, such as a chassis base or a heat sink, and grounded. Insulated type transistors, such as collector insulated type transistors, in which the heat sink is insulated from and attached to the mounting member are in demand and are becoming popular. The general structure of this insulating type resin-encapsulated semiconductor device is one in which the back side of the heat sink is exposed and the outer resin material is molded. A thin insulating plate with good thermal conductivity, such as a mica plate, is interposed between the two. However, with this structure and mounting method, the insulating plate must be positioned and laid during mounting, which increases the number of installation steps and makes workability extremely poor.Also, since the semiconductor device and the insulating plate are separate entities, maintenance and management of both is required. The problem was that it was complicated.
上記欠点を解決するものとして、放熱板の裏面
に薄い樹脂膜を外装樹脂材と一体にモールド成形
した絶縁タイプの樹脂封止型半導体装置がある。
これの基本構造例を第１図に示すと、１は放熱
板、２は放熱板１上にマウントされた半導体ペレ
ツト、３は半導体ペレツト２の近傍より外方へ延
びるリード、４はリード３を半導体ペレツト２の
表面電極とを電気的接続する金属細線、６は放熱
板１の裏面を含む要部にモールド成形された外装
樹脂材である。外装樹脂材５の放熱板１裏面を覆
う一部は薄く均一な厚さの樹脂膜６として形成さ
れ、これが実装時に放熱板１を被取付部材７から
絶縁し、これにより実装作業などが大幅に改善さ
れる。 As a solution to the above drawbacks, there is an insulating type resin-sealed semiconductor device in which a thin resin film is integrally molded with an exterior resin material on the back surface of a heat sink.
An example of the basic structure of this is shown in FIG. 1. 1 is a heat sink, 2 is a semiconductor pellet mounted on the heat sink 1, 3 is a lead extending outward from the vicinity of the semiconductor pellet 2, and 4 is a lead 3. A thin metal wire 6 electrically connecting the surface electrode of the semiconductor pellet 2 is an exterior resin material molded on the main part including the back surface of the heat sink 1. A part of the exterior resin material 5 that covers the back surface of the heat sink 1 is formed as a thin and uniformly thick resin film 6, which insulates the heat sink 1 from the mounting member 7 during mounting, thereby greatly reducing the mounting work. Improved.
ところで、上記樹脂膜６を外装樹脂材５と同時
に且つ一体にモールド成形するためには、例えば
第２図に示すように樹脂モールド成形用の上金型
８と下金型９の衝合部分に形成されたキヤビテイ
１０内に放熱板１をその裏面をキヤビテイ１０の
底面から一定の高さに浮かせた状態で安定に支持
しておくキヤビテイ１０内に溶融樹脂材を注入す
る必要がある。このキヤビテイ１０内での放熱板
１の支持はリード３を介して行うことも可能であ
るが高い安定性が要求されるので、多くは図示の
如くキヤビテイ１０の側面に突出退入自在に設け
た複数の支持ピン１１，１１……を突出させてそ
の先端で放熱板１の側端面を押圧して放熱板１を
支持し、樹脂モールド成形後支持ピン１１，１１
……を抜いて両金型８，９を外している。ところ
が、このように成形された半導体装置は外装樹脂
材５の側面に支持ピン１１，１１……の抜けた小
孔１２，１２……が残つたままとなつて外観を悪
くすると共に、小孔１２，１２……から放熱板１
の一部が外部に露出してしまい雰囲気中の水分侵
入路となり結局耐圧を悪くする問題があつた。更
には上記支持ピン１１，１１……を装備する金型
８，９は極めて複雑で高価なものが必要となり、
結果的に半導体装置を高価ならしめていた。 By the way, in order to mold the resin film 6 simultaneously and integrally with the exterior resin material 5, for example, as shown in FIG. It is necessary to inject a molten resin material into the cavity 10 to stably support the heat dissipation plate 1 in the formed cavity 10 with its back surface floating at a constant height above the bottom surface of the cavity 10. It is possible to support the heat dissipation plate 1 within the cavity 10 through the leads 3, but since high stability is required, in most cases it is provided on the side of the cavity 10 so as to be able to protrude and retract as shown in the figure. A plurality of support pins 11, 11, .
... is pulled out and both molds 8 and 9 are removed. However, in the semiconductor device molded in this way, the small holes 12, 12, . 12, 12... to heat sink 1
There was a problem that a part of the capacitor was exposed to the outside and became a path for moisture to enter the atmosphere, resulting in poor pressure resistance. Furthermore, the molds 8, 9 equipped with the support pins 11, 11, . . . need to be extremely complicated and expensive.
As a result, semiconductor devices became expensive.
考案の開示
本考案は上記問題点を解決することを目的と
し、これを達成したものである。本考案の特徴は
放熱板兼用の素子固着基板の裏面に予め薄く絶縁
膜を被着形成してから外装樹脂材を前記絶縁膜の
中央部を除く周縁部上を一部被覆させてモールド
成形することで、このようにすることにより樹脂
モールド成形用金型に構造簡単なものが使用で
き、また外装樹脂材に小孔が無くなり耐圧向上が
可能となる。DISCLOSURE OF THE INVENTION The present invention aims to solve the above-mentioned problems, and has achieved this goal. The feature of the present invention is that a thin insulating film is formed in advance on the back side of the element fixing substrate which also serves as a heat sink, and then an exterior resin material is molded to cover a portion of the periphery of the insulating film except for the central part. By doing this, a mold with a simple structure can be used for resin molding, and there are no small holes in the exterior resin material, making it possible to improve pressure resistance.
考案を実施するための最良の形態
第１図と同一タイプのものに本考案を適用した
一例を第３図に示し、これを説明すると、２０は
放熱板兼用の素子固着基板、２１は半導体ペレツ
ト、２２はリード、２３は金属細線で、これらの
内容は第１図と同様である。２４は固着基板２０
の裏面に被着形成された均一な厚さで薄い絶縁
膜、２５は要部にモールド成形された外装樹脂材
である。絶縁膜２４は放熱性の良い絶縁材で、例
えばアルミナ（Al2O3）膜や有機高分子材料で形
成される。絶縁膜２４がアルミナ膜のように耐熱
性の良好なものの場合、この絶縁膜２４の形成は
例えば第５図に示すように固着基板２０を打抜き
成形する時の金属板２６の裏面全域に予め形成し
ておけばよい。また絶縁膜２４が有機高分子材料
のように耐熱性の悪いものであれば固着基板２０
の打抜き成形後で所望の熱処理が完了した後に塗
布する等の手段で形成すればよい。固着基板２０
の裏面のエツジ部は面取りされてテーバエツジｍ
に成形され、このテーバエツジｍ上にも絶縁膜２
４を被着形成する。BEST MODE FOR CARRYING OUT THE INVENTION FIG. 3 shows an example in which the present invention is applied to the same type of device as shown in FIG. , 22 is a lead, and 23 is a thin metal wire, the contents of which are the same as in FIG. 24 is a fixed substrate 20
A thin insulating film with a uniform thickness is formed on the back surface of the insulating film, and 25 is an exterior resin material molded onto the main part. The insulating film 24 is made of an insulating material with good heat dissipation properties, such as an alumina (Al 2 O 3 ) film or an organic polymer material. When the insulating film 24 is made of a material with good heat resistance such as an alumina film, the insulating film 24 is formed in advance over the entire back surface of the metal plate 26 when stamping the fixed substrate 20, as shown in FIG. Just do it. In addition, if the insulating film 24 is made of a material with poor heat resistance such as an organic polymer material, the fixed substrate 24
It may be formed by means such as coating after the desired heat treatment is completed after punching. Fixed board 20
The edges on the back side of
The insulating film 2 is also formed on this Taber edge m.
4 is deposited and formed.
このように裏面に絶縁膜２４が予め形成された
固着基板２０は例えば第４図に示す如き上金型２
７と下金型２８で樹脂モールド成形される。つま
り、両金型２７，２８で形成されたキヤビテイ２
９の底面に固着基板２０の絶縁膜２４の裏面を密
着させてキヤビテイ２９に溶融樹脂材を注入して
外装樹脂材２５を形成する。この場合溶融樹脂材
は固着基板２０の裏面絶縁膜２４のテーパ状に浮
いた周縁部２４′とキヤビテイ底面の間に回り込
み、従つて外装樹脂材２５は絶縁膜２４と面一に
且つ絶縁膜２４の周縁部２４′を抱き込む形で形
成され、絶縁膜２４の取付強度が大きく安定す
る。両金型２７，２８はキヤビテイ２９内で固着
基板２０を浮かす必要がないので通常の構造簡単
で安価なものが使用できる。 The fixed substrate 20, on which the insulating film 24 has been formed in advance on the back surface, is attached to the upper mold 2 as shown in FIG. 4, for example.
7 and a lower mold 28 for resin molding. In other words, the cavity 2 formed by both molds 27 and 28
The back surface of the insulating film 24 of the fixed substrate 20 is brought into close contact with the bottom surface of the cavity 29, and a molten resin material is injected into the cavity 29 to form an exterior resin material 25. In this case, the molten resin material wraps around between the tapered floating peripheral edge 24' of the back insulating film 24 of the fixed substrate 20 and the bottom surface of the cavity, so that the exterior resin material 25 is flush with the insulating film 24 and It is formed in such a way as to embrace the peripheral edge 24' of the insulating film 24, and the mounting strength of the insulating film 24 is large and stable. Since it is not necessary to float the fixed substrate 20 in the cavity 29, the molds 27 and 28 can be of ordinary construction and simple and inexpensive.
以上のように、本考案によれば外装樹脂材から
内部の固着基板を一部露出させるような小孔を無
くすことができ、高耐圧化が可能で且つ外観向上
も図れる。また樹脂モールド成形用金型に簡単で
安価なものが使用できるので、製品のコストダウ
ンが図れる。 As described above, according to the present invention, it is possible to eliminate small holes that partially expose the internal fixed substrate from the exterior resin material, and it is possible to achieve high withstand voltage and improve the appearance. Furthermore, since a simple and inexpensive mold can be used for resin molding, the cost of the product can be reduced.
第１図及び第２図は従来の樹脂封止型半導体装
置の一例を示す実装時の断面図及び樹脂モールド
成形時の金型断面図、第３図は本考案の一実施例
を示す断面図、第４図及び第５図は第３図の半導
体装置の樹脂モールド成形時の金型断面図及び放
熱板成形時の概略断面図である。
２０……固着基板、２４……絶縁膜、２５……
外装樹脂材。
1 and 2 are a cross-sectional view of an example of a conventional resin-sealed semiconductor device during mounting and a cross-sectional view of a mold during resin molding, and FIG. 3 is a cross-sectional view of an example of the present invention. , 4 and 5 are a cross-sectional view of a mold during resin molding of the semiconductor device of FIG. 3, and a schematic cross-sectional view during molding of a heat sink. 20...Fixed substrate, 24...Insulating film, 25...
Exterior resin material.
Claims (1)
に予め絶縁膜を被着形成させ、且つ、前記絶縁膜
の周縁部上まで外装樹脂材をモールド成形して、
絶縁膜の中央部を露出させたことを特徴とする樹
脂封止型半導体装置。 An insulating film is preliminarily formed on the back side of the fixing substrate that also serves as a heat sink, to which the elements are not fixed, and an exterior resin material is molded up to the periphery of the insulating film,
A resin-sealed semiconductor device characterized in that the central portion of an insulating film is exposed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1982163787U JPS5967944U (en) | 1982-10-27 | 1982-10-27 | Resin-encapsulated semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1982163787U JPS5967944U (en) | 1982-10-27 | 1982-10-27 | Resin-encapsulated semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5967944U JPS5967944U (en) | 1984-05-08 |
| JPS6233329Y2 true JPS6233329Y2 (en) | 1987-08-26 |
Family
ID=30359270
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1982163787U Granted JPS5967944U (en) | 1982-10-27 | 1982-10-27 | Resin-encapsulated semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5967944U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105531816A (en) * | 2013-09-11 | 2016-04-27 | 三菱电机株式会社 | Semiconductor device and manufacturing method thereof |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006086342A (en) * | 2004-09-16 | 2006-03-30 | Toyota Motor Corp | Resin-encapsulated semiconductor device |
| JP5925052B2 (en) * | 2012-05-23 | 2016-05-25 | 三菱電機株式会社 | Semiconductor device and manufacturing method of semiconductor device |
| JP7633590B2 (en) * | 2020-12-23 | 2025-02-20 | 株式会社オートネットワーク技術研究所 | Circuit structure |
| JP7633591B2 (en) * | 2020-12-23 | 2025-02-20 | 株式会社オートネットワーク技術研究所 | Circuit structure |
-
1982
- 1982-10-27 JP JP1982163787U patent/JPS5967944U/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105531816A (en) * | 2013-09-11 | 2016-04-27 | 三菱电机株式会社 | Semiconductor device and manufacturing method thereof |
| US9978662B2 (en) | 2013-09-11 | 2018-05-22 | Mitsubishi Electric Corporation | Semiconductor device and manufacturing method for same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5967944U (en) | 1984-05-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA1174821A (en) | Method for manufacturing a plastic encapsulated semiconductor device and a lead frame therefor | |
| KR980006193A (en) | Thermally Improved Flip Chip Packages and Manufacturing Method Thereof | |
| US4750030A (en) | Resin-molded semiconductor device having heat radiating plate embedded in the resin | |
| JPH04233257A (en) | Large-scale integrated electronic component | |
| EP0069390B1 (en) | Lead frame for plastic encapsulated semiconductor device | |
| JPS6233329Y2 (en) | ||
| JPS59135753A (en) | Semiconductor device and manufacture thereof | |
| US5793613A (en) | Heat-dissipating and supporting structure for a plastic package with a fully insulated heat sink for an electronic device | |
| JP2000340718A (en) | Power semiconductor device | |
| JPS6474746A (en) | Resin-insulated semiconductor device | |
| US5886396A (en) | Leadframe assembly for conducting thermal energy from a semiconductor die disposed in a package | |
| JPS61219143A (en) | Manufacture of resin sealed type semiconductor device | |
| JP2597768Y2 (en) | Power semiconductor device | |
| JP2505196Y2 (en) | Resin mold type semiconductor device | |
| JPS61194755A (en) | Semiconductor device | |
| JPH0325409Y2 (en) | ||
| JPS607484Y2 (en) | Resin molding equipment for electronic parts | |
| JPH01135032A (en) | Manufacture of resin-sealed semiconductor device | |
| JPS595981Y2 (en) | semiconductor equipment | |
| JPS647496B2 (en) | ||
| JPS61280640A (en) | Semiconductor device | |
| JP2517954Y2 (en) | Resin mold type semiconductor device | |
| JPS5926604Y2 (en) | semiconductor equipment | |
| JPH0334913Y2 (en) | ||
| CA1213678A (en) | Lead frame for plastic encapsulated semiconductor device |