JPS623597B2 - - Google Patents
Info
- Publication number
- JPS623597B2 JPS623597B2 JP52145332A JP14533277A JPS623597B2 JP S623597 B2 JPS623597 B2 JP S623597B2 JP 52145332 A JP52145332 A JP 52145332A JP 14533277 A JP14533277 A JP 14533277A JP S623597 B2 JPS623597 B2 JP S623597B2
- Authority
- JP
- Japan
- Prior art keywords
- solvent
- coating composition
- titanium oxide
- film
- boron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002019 doping agent Substances 0.000 claims description 15
- 239000002904 solvent Substances 0.000 claims description 13
- 239000008199 coating composition Substances 0.000 claims description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 229910052796 boron Inorganic materials 0.000 claims description 6
- -1 titanate ester Chemical class 0.000 claims description 6
- LLZRNZOLAXHGLL-UHFFFAOYSA-J titanic acid Chemical compound O[Ti](O)(O)O LLZRNZOLAXHGLL-UHFFFAOYSA-J 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- 235000019441 ethanol Nutrition 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 239000007795 chemical reaction product Substances 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 14
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 14
- 239000012535 impurity Substances 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 8
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 229910052810 boron oxide Inorganic materials 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 3
- HJTAZXHBEBIQQX-UHFFFAOYSA-N 1,5-bis(chloromethyl)naphthalene Chemical compound C1=CC=C2C(CCl)=CC=CC2=C1CCl HJTAZXHBEBIQQX-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- GOLCXWYRSKYTSP-UHFFFAOYSA-N arsenic trioxide Inorganic materials O1[As]2O[As]1O2 GOLCXWYRSKYTSP-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 150000001735 carboxylic acids Chemical class 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 150000003014 phosphoric acid esters Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Paints Or Removers (AREA)
- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】
本発明は塗布体組成物に関するものであり、特
に太陽電池のｐ−ｎ接合形成用ならびに反射防止
膜形成用塗布体組成物として有効なものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a coating composition, and is particularly effective as a coating composition for forming a pn junction of a solar cell and an antireflection film.
従来、太陽電池が高価格となるのは、その製造
工程数が多く、また製作に際し熟練技術を要する
点に１つの原因がある。たとえば反射防止膜形成
工程は一般に一酸化珪素等を用いた真空蒸着法が
採用されており、このため大型設備を要し、作業
効果が悪い等の欠点を有している。この欠点を解
決する手段として、反射防止膜材料に優れた特性
を呈する酸化チタン膜を簡便な塗布法で得る方法
が本発明者の１人によつて見い出されている。
（特願昭52−62306参照）
しかし、この方法においても緻密な酸化チタン
膜を得るには副次工程として熱処理が必要とな
り、製造工程が多岐工程となる。 Conventionally, one of the reasons for the high price of solar cells is that they require a large number of manufacturing steps and require skilled technology to manufacture. For example, the process of forming an antireflection film generally employs a vacuum evaporation method using silicon monoxide or the like, which has disadvantages such as requiring large equipment and poor working efficiency. As a means to solve this drawback, one of the inventors of the present invention has discovered a method of obtaining a titanium oxide film exhibiting excellent properties as an antireflection film material by a simple coating method.
(See Japanese Patent Application No. 52-62306.) However, even with this method, heat treatment is required as a secondary step in order to obtain a dense titanium oxide film, and the manufacturing process involves a wide variety of steps.
本発明は上記欠点を一挙に解決するために、ｐ
−ｎ接合形成と反射防止膜形成を同一の熱処理に
より行なうための塗布体組成物を提供することを
目的とするものである。即ち、半導体基板に本発
明による組成物を塗布した後、熱処理を行なうこ
とによつてｐ−ｎ接合が形成され、同時に反射防
止膜としての酸化チタン膜が形成される。 In order to solve the above-mentioned drawbacks all at once, the present invention aims at p.
An object of the present invention is to provide a coating composition for forming a -n junction and an antireflection film by the same heat treatment. That is, after applying the composition according to the present invention to a semiconductor substrate, heat treatment is performed to form a pn junction, and at the same time, a titanium oxide film as an antireflection film is formed.
本発明の組成物は、適当な溶媒中にドーパント
と、チタン酸エステルとカルボン酸とを加えて混
合反応させることにより作製される。溶媒は、添
加物及び反応生成物が安定に存在し得るものであ
れば良い。またドーパント用原料として、五酸化
リン、酸化ホウ素、三酸化砒素等の酸化物あるい
はリン酸エステル、ボロンエステル等の有機化合
物が実施に供されこれらのドーパント用原材料は
いずれも溶媒に溶ける性質をもつ。 The composition of the present invention is prepared by adding a dopant, a titanate ester, and a carboxylic acid to a suitable solvent and causing a mixture reaction. The solvent may be any solvent as long as it allows the additives and reaction products to exist stably. In addition, oxides such as phosphorus pentoxide, boron oxide, and arsenic trioxide, and organic compounds such as phosphoric acid esters and boron esters are used as raw materials for dopants, and all of these raw materials for dopants have the property of being soluble in solvents. .
チタン酸エステルとカルボン酸とは反応した結
果としてチタン酸が生成されこの組成物を半導体
基板に塗布する。塗布方法は回転塗布、スプレイ
または浸漬法等であつて良い。その後溶媒等が蒸
発する温度にて速やかに熱処理を施す。この過程
で溶媒等は蒸発し、チタン酸は分解して酸化チタ
ン膜が形成される。この酸化チタン膜は先に加え
たドーパント即ち、リン、ホウ素又は砒素等を含
有しており不純物拡散源として用いられ得る。さ
らに不活性ガス雰囲気中で高温保持することによ
り不純物が半導体基板中に拡散し、基板と導電性
が反転している拡散層が形成される。即ち太陽電
池の光起電力効果に必要なｐ−ｎ接合が形成され
る。また上記酸化チタン膜は反射防止膜として優
れた性質を有しており、そのまま反射防止膜とし
て用いられる。 Titanic acid is produced as a result of the reaction between the titanate ester and the carboxylic acid, and this composition is applied to a semiconductor substrate. The coating method may be spin coating, spraying, dipping, or the like. Thereafter, heat treatment is promptly performed at a temperature at which the solvent etc. evaporate. During this process, the solvent and the like evaporate, and the titanic acid decomposes to form a titanium oxide film. This titanium oxide film contains the previously added dopants, such as phosphorus, boron, or arsenic, and can be used as an impurity diffusion source. Further, by maintaining the semiconductor substrate at a high temperature in an inert gas atmosphere, impurities are diffused into the semiconductor substrate, and a diffusion layer having conductivity opposite to that of the substrate is formed. That is, a pn junction necessary for the photovoltaic effect of the solar cell is formed. Further, the titanium oxide film has excellent properties as an antireflection film, and can be used as it is as an antireflection film.
一般に太陽電池において、拡散層抵抗による直
列抵抗の増加が効率の低下をきたさない範囲でｐ
−ｎ接合深さは浅い方が、光発生電流が大きくな
り望ましい。また不純物表面濃度が高いほど拡散
層抵抗は小さく、開放電圧が大きくなり望まし
い。このような不純物拡散層を得るための拡散源
として、適当なドーパントを含む酸化チタン膜は
非常に有効なものであることが判明した。即ち、
酸化チタン膜中での不純物の拡散係数は拡散層中
の不純物表面濃度が充分に高くなるほど大きく、
しかも酸化チタン膜から不純物が雰囲気中へ消散
するほどには大きくない。しかもチタンは酸素と
の結合エネルギーが非常に大きいために酸化チタ
ンが還元されてチタンが半導体基板中へ拡散し、
太陽電池の特性に悪影響を及ぼすことがない。 In general, in solar cells, p
The shallower the −n junction depth, the greater the photo-generated current, which is desirable. Further, the higher the impurity surface concentration, the lower the diffusion layer resistance and the higher the open circuit voltage, which is desirable. It has been found that a titanium oxide film containing an appropriate dopant is very effective as a diffusion source for obtaining such an impurity diffusion layer. That is,
The diffusion coefficient of impurities in a titanium oxide film increases as the impurity surface concentration in the diffusion layer becomes sufficiently high.
Moreover, it is not large enough to cause impurities to dissipate from the titanium oxide film into the atmosphere. Moreover, since titanium has a very large bonding energy with oxygen, titanium oxide is reduced and titanium diffuses into the semiconductor substrate.
It does not adversely affect the characteristics of solar cells.
また光が透明媒質から単層膜に垂直に入射する
場合は次式の関係のとき反射はなくなる。 Furthermore, when light is perpendicularly incident on a single layer film from a transparent medium, there is no reflection when the following equation holds.
n1 2＝n0n2 ……(1)
n1d＝１／４λ ……(2)
ここでn0は透明媒質の屈折率、n1は単層膜の屈
折率、n2は基板の屈折率、λは光の波長、ｄは単
層膜厚である。周知の如く、これは単層干渉膜を
用いた場合の反射防止膜の原理である。 n 1 2 = n 0 n 2 ... (1) n 1 d = 1/4λ ... (2) where n 0 is the refractive index of the transparent medium, n 1 is the refractive index of the single layer film, and n 2 is the substrate , λ is the wavelength of light, and d is the monolayer thickness. As is well known, this is the principle of an antireflection film when a single-layer interference film is used.
上記酸化チタン膜を(1)式および(2)式に近い条件
に形成することにより太陽電池の反射防止膜とし
て用いることが可能となる。たとえば表面パツケ
ージ材料としてシリコン樹脂（n0＝1.43）、基板
としてシリコン素子（n2＝4.0）を用い、太陽光
スペクトル中最も光発生電流寄与の大きい波長を
600nmとすると、最適単層反射防止膜の屈折率は
2.39であり、膜厚は630Åである。本発明によれ
ばこれに近い条件に上記酸化チタン膜を形成する
ことが可能となる。以下実施例に従つて本発明を
さらに詳細に説明する。 By forming the titanium oxide film under conditions close to formulas (1) and (2), it becomes possible to use it as an antireflection film for solar cells. For example, by using a silicon resin (n 0 = 1.43) as the surface package material and a silicon element (n 2 = 4.0) as the substrate, the wavelength that contributes the most to the photogenerated current in the sunlight spectrum can be selected.
When the wavelength is 600nm, the refractive index of the optimal single-layer antireflection film is
2.39, and the film thickness is 630 Å. According to the present invention, it is possible to form the titanium oxide film under conditions close to this. The present invention will be explained in more detail below with reference to Examples.
溶媒としてのエチルアルコール100c.c.に、ｎ型
ドーパントとしての五酸化リン10.5ｇ、チタン酸
イソプロピル3.5c.c.、酢酸2.6c.c.を加え、撹拌す
る。上記撹拌によつて以下のような化学反応が起
こると考えられ、チタン酸Ｔi（OH）4を生成す
る。
10.5 g of phosphorus pentoxide as an n-type dopant, 3.5 cc of isopropyl titanate, and 2.6 cc of acetic acid are added to 100 cc of ethyl alcohol as a solvent, and the mixture is stirred. It is thought that the following chemical reaction occurs due to the above stirring, and titanic acid T i (OH) 4 is produced.
五酸化リンがエチルアルコール中の微量の水と
反応してリン酸が生成し、わずかな酸性を呈す
る。 Phosphorus pentoxide reacts with trace amounts of water in ethyl alcohol to produce phosphoric acid, which exhibits a slight acidity.
P2O5＋3H2O→2H3PO4 (1)
チタン酸イソプロピルがリン酸により分解し
て、リン酸エステルPO（OC3H7）3とチタン酸Ｔi
（OH）4が生じる。 P 2 O 5 +3H 2 O→2H 3 PO 4 (1) Isopropyl titanate decomposes with phosphoric acid to form phosphate ester PO(OC 3 H 7 ) 3 and titanate Ti
(OH) 4 is produced.
3Ti（OC3H7）4＋4H3PO4
→3Ti（OH）4＋4PO（OC3H7）3 (2)
上記反応によつて生じたチタン酸を含む溶液が
塗布体組成物である。 3T i (OC 3 H 7 ) 4 +4H 3 PO 4 →3T i (OH) 4 +4PO (OC 3 H 7 ) 3 (2) The solution containing titanic acid produced by the above reaction is the coating composition. .
比抵抗１Ω−cm、形状寸法20×20mmのＰ型単結
晶シリコンウエハーに上記塗布体を回転塗布機を
用いて塗布し、200℃にて20分間大気中にて熱処
理を行なう。この過程において上記塗布体組成物
中の不安定なチタン酸Ｔi（OH）4は分解し、
Ｔi（OH）4→ＴiO2＋2H2O (3)
によつてＴiO2膜が生成される。このＴiO2膜中に
ドーパントであるリンが含まれる。その後窒素雰
囲気中にて875℃、13分間熱処理してドーパント
の拡散処理を行なう。不純物表面濃度は2.5×
1020cm-3であり、ｐ−ｎ接合深さは約0.3μｍとな
つた。この時の酸化チタン膜厚は630Åであり、
屈折率は2.15である。結晶シリコンウエハーの裏
面に、裏面エツチに続いて電極を形成し、太陽光
を垂直入射させる。入射エネルギーは139.6ｍ
Ｗ／cm2、入射スペクトルはAM0に設定する。こ
のときの短絡電流は140ｍＡであり、実効効率は
12.0％であつた。 The above coating material was applied to a P-type single crystal silicon wafer having a specific resistance of 1 Ω-cm and a shape size of 20×20 mm using a rotary coating machine, and heat-treated at 200° C. for 20 minutes in the air. In this process, the unstable titanate T i (OH) 4 in the coating composition is decomposed and a T i O 2 film is formed by T i (OH) 4 →T i O 2 +2H 2 O (3). is generated. This T i O 2 film contains phosphorus as a dopant. Thereafter, a heat treatment is performed at 875° C. for 13 minutes in a nitrogen atmosphere to perform a dopant diffusion treatment. Impurity surface concentration is 2.5×
10 20 cm -3 , and the pn junction depth was approximately 0.3 μm. The titanium oxide film thickness at this time was 630 Å,
The refractive index is 2.15. Electrodes are formed on the back side of a crystalline silicon wafer following backside etching, and sunlight is allowed to enter vertically. Incident energy is 139.6m
W/cm 2 and the incident spectrum is set to AM0. The short circuit current at this time is 140mA, and the effective efficiency is
It was 12.0%.
次に前記したドーパント原材料のうち、Ｐ型ド
ーパントとして酸化ホウ素を利用する場合は、同
様に溶媒としてのエチルアルコール100c.c.に、酸
化ホウ素8.2ｇ、チタン酸イソプロピル10c.c.、酢
酸２c.c.を加えて撹拌する。この撹拌によつて酸化
ホウ素は水と反応して
B2O3＋3H2O→2H3BO3が生成され (4)
アルコール存在下で
H3BO3＋3C2H5OH
←→Ｂ（OC2H5）3＋3H2O (5)
Ｂ（OC2H5）3＋C2H5OH
→〔（C2H5O）4B〕Ｈ (6)
により酸性を呈し、チタン酸エステルを分解して
チタン酸Ｔi（OH）4を生じる。 Next, when using boron oxide as a P-type dopant among the dopant raw materials mentioned above, similarly, 8.2 g of boron oxide, 10 c.c. of isopropyl titanate, and 2 c. of acetic acid are added to 100 c.c. of ethyl alcohol as a solvent. Add c. and stir. By this stirring, boron oxide reacts with water to generate B 2 O 3 +3H 2 O→2H 3 BO 3 (4) In the presence of alcohol, H 3 BO 3 +3C 2 H 5 OH ←→B(OC 2 H 5 ) 3 +3H 2 O (5) B(OC 2 H 5 ) 3 +C 2 H 5 OH → [(C 2 H 5 O) 4 B] becomes acidic due to H (6) and decomposes the titanate ester. to produce titanate T i (OH) 4 .
上記反応によつて生じたチタン酸を含む溶液を
塗布体組成物として、Ｎ型単結晶シリコンウエハ
ーに回転塗布機で塗布し、200℃にて20分間大気
中で熱処理する。この過程でボロンを不純物とし
て含む酸化チタン膜がウエハー上に形成される。
その後1000℃、30分間ボロンの拡散処理を行な
う。不純物の表面濃度は約２×1020cm-3であり、
ｐ−ｎ接合の深さは約0.7μｍであつた。反射防
止膜となるチタン膜厚は720Åであり、屈折率は
1.97であつた。 A solution containing titanic acid produced by the above reaction is applied as a coating composition to an N-type single crystal silicon wafer using a spin coater, and heat treated at 200° C. for 20 minutes in the air. In this process, a titanium oxide film containing boron as an impurity is formed on the wafer.
After that, a boron diffusion treatment is performed at 1000°C for 30 minutes. The surface concentration of impurities is approximately 2 × 10 20 cm -3 ,
The depth of the pn junction was approximately 0.7 μm. The titanium film thickness that serves as the anti-reflection film is 720 Å, and the refractive index is
It was 1.97.
他のドーパント原材料である三酸化砒素も同様
の反応によつて砒素がｎ型ドーパントになる。ま
たリン酸エステルやボロンエステルを用いた場合
は、前記(2)式或いは(5)式に示したエステルがこれ
らに相当し、同様にリンやボロンはドーパントに
なる。 Arsenic trioxide, another dopant raw material, undergoes a similar reaction to become an n-type dopant. Further, when a phosphoric acid ester or a boron ester is used, the ester shown in the above formula (2) or (5) corresponds to these, and similarly, phosphorus and boron become dopants.
以上詳説した如く、本発明に係る塗布体組成物
を用いることにより、太陽電池のｐ−ｎ接合と反
射防止膜を同時形成することが可能となり、製造
工程が非常に簡素化される。従つて太陽電池を安
価に製作することができ、その産業的意義は非常
に大である。 As explained in detail above, by using the coating composition according to the present invention, it becomes possible to simultaneously form the pn junction and antireflection film of a solar cell, and the manufacturing process is greatly simplified. Therefore, solar cells can be manufactured at low cost and have great industrial significance.
Claims (1)
の反応により得られるチタン酸を主とする反応生
成物より成り、該反応生成物は、ｐ−ｎ接合形成
用ドーパントが前記溶媒に溶解する化合物のかた
ちで添加されていることを特徴とする塗布体組成
物。 ２ 溶媒がエチルアルコールを主として構成され
た特許請求の範囲第１項記載の塗布体組成物。 ３ ｐ−ｎ接合形成用ドーパントがリン、ボロン
または砒素から成り、溶媒中にそれらの酸化物と
して付加されている特許請求の範囲第１項又は第
２項記載の塗布組成物。[Claims] 1. Consists of a reaction product mainly consisting of titanic acid obtained by the reaction of a titanate ester mixed in a solvent with an acid, and the reaction product contains a p-n junction forming dopant. A coating composition characterized in that the solvent is added in the form of a compound soluble in the solvent. 2. The coating composition according to claim 1, wherein the solvent is mainly composed of ethyl alcohol. 3. The coating composition according to claim 1 or 2, wherein the p-n junction forming dopant comprises phosphorus, boron or arsenic and is added as an oxide thereof in the solvent.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14533277A JPS5476629A (en) | 1977-11-30 | 1977-11-30 | Coating composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14533277A JPS5476629A (en) | 1977-11-30 | 1977-11-30 | Coating composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5476629A JPS5476629A (en) | 1979-06-19 |
| JPS623597B2 true JPS623597B2 (en) | 1987-01-26 |
Family
ID=15382711
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14533277A Granted JPS5476629A (en) | 1977-11-30 | 1977-11-30 | Coating composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5476629A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013153950A1 (en) * | 2012-04-13 | 2013-10-17 | ナガセケムテックス株式会社 | Coating dispersant composition, method for producing coating dispersant composition, solar cell, and method for manufacturing solar cell |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002005349A1 (en) * | 2000-07-12 | 2002-01-17 | California Institute Of Technology | Electrical passivation of silicon-containing surfaces using organic layers |
| JP2006351995A (en) * | 2005-06-20 | 2006-12-28 | Sharp Corp | Method for manufacturing photoelectric conversion element |
| JP2008227142A (en) * | 2007-03-13 | 2008-09-25 | Tohoku Univ | Impurity doping method and semiconductor device manufacturing method using the same |
| JP2011501442A (en) * | 2007-10-17 | 2011-01-06 | フエロ コーポレーション | Dielectric coating for single-side back contact solar cell |
| KR20120085333A (en) * | 2009-12-28 | 2012-07-31 | 샤프 가부시키가이샤 | Method for manufacturing a solar cell |
-
1977
- 1977-11-30 JP JP14533277A patent/JPS5476629A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013153950A1 (en) * | 2012-04-13 | 2013-10-17 | ナガセケムテックス株式会社 | Coating dispersant composition, method for producing coating dispersant composition, solar cell, and method for manufacturing solar cell |
| JP2013222747A (en) * | 2012-04-13 | 2013-10-28 | Nagase Chemtex Corp | Coating diffusion agent composition, method for producing the same, solar cell, and method for manufacturing the same |
| CN104221134A (en) * | 2012-04-13 | 2014-12-17 | 长濑化成株式会社 | Coating diffusing agent composition, manufacturing method of coating diffusing agent composition, solar cell, and manufacturing method of solar cell |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5476629A (en) | 1979-06-19 |
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